Abstract: Embodiments of the present invention may provide a microchip applicable to an electrophoresis employing UV detection and a method of manufacturing the same. The microchip of the present invention has a glass channel plate, which is formed on an upper surface thereof with a loading channel and a separation channel and is provided on the upper surface thereof with an optical slit layer made of silicon except the channel region, and a glass reservoir plate, which is formed with sample solution reservoirs and buffer solution reservoirs. The loading channel and the separation channel are formed on the channel plate by deep reactive ion etching. The sample solution reservoirs and the buffer solution reservoirs are formed in the reservoir plate by sand blasting. The channel plate and the reservoir plate are combined by anodic bonding the optical slit layer and the reservoir plate. Electrodes for sample and electrodes for buffer are deposited by sputtering Pt with a shadow mask after anodic bonding.

Abstract: According to one embodiment, a method of manufacturing a magnetic recording medium includes forming a first hard mask, a second hard mask and a resist on a magnetic recording layer, imprinting a stamper to the resist to transfer patterns of protrusions and recesses to the resist, removing residues remaining in the recesses of the patterned resist, etching the second hard mask by using the patterned resist as a mask to transfer the patterns of protrusions and recesses to the second hard mask, etching the first hard mask by using the second hard mask as a mask to transfer the patterns of protrusions and recesses to the first hard mask, removing the second hard mask remaining on the protrusions of the first hard mask, and deactivating the magnetic recording layer exposed in the recesses by means of ion beam irradiation.

Abstract: A duplexer includes an FBAR band pass filter that can be easily embodied in single chip. A method for manufacturing the same includes the steps of forming a plurality of recesses in a substrate, forming an insulation layer on the substrate, and forming a plurality of filling-up layers that fill the recesses. The method also includes the step of forming a transmitting bandpass filter and forming a receiving bandpass filter on an upper side of the membrane, with each bandpass filter including at least two film bulk acoustic resonators (FBARs). In addition, the method includes the step of forming a circuit that connects the bandpass filters to an antenna terminal, with this circuit including at least one inductor and capacitor. The method also includes a step of removing the filling-up layers from the recesses in the substrate.

Abstract: A method of manufacturing a semiconductor device includes providing a wafer for supporting the semiconductor device. An insulation layer is disposed over a top surface of the wafer. The method includes forming a first interconnect structure over the top surface of the wafer with temperatures in excess of 200° C., forming a metal pillar over the wafer in electrical contact with the first interconnect structure, connecting a semiconductor component to the first interconnect structure, and forming encapsulant over the semiconductor component. The encapsulant is etched to expose a portion of the metal pillar. A buffer layer is optionally formed over the encapsulant. The method includes forming a second interconnect structure over the encapsulant in electrical contact with the metal pillar with temperatures below 200° C., and removing a portion of a backside of the wafer opposite the top surface of the wafer.

Abstract: A method of lifting off includes forming a first material layer on a substrate; forming a photoresist pattern including first and second holes and on the first material layer; patterning the first material layer using the photoresist pattern as a patterning mask to form a material pattern having first and second grooves within the material pattern, the first and second grooves corresponding to the first and second holes, respectively; forming a second material layer on an entire surface of the substrate including the photoresist pattern and the first and second grooves; and removing the photoresist pattern and the second material layer on the photoresist pattern at the same time, wherein a portion of the material pattern between the first and second grooves and portions of the material pattern at sides of the first and second grooves constitute a line as a whole.

Abstract: The invention relates to a method for producing a dielectric layer (3) in an electroacoustic component (1), in particular a component operating with acoustic surface waves or bulk acoustic waves, comprising a substrate and an associated electrode structure, in which the dielectric layer (3) is formed at least in part by depositing by a thermal vapour deposition process at least one evaporation material selected from the following group of layer vaporising materials: vapour deposition glass material such as borosilicate glass, silicon nitride and aluminium oxide. The invention further relates to an electroacoustic component.

Abstract: This invention presents a method for the fabrication of periodic nanostructures on polymeric surfaces by means of plasma processing, which method comprises the following steps: (i) provision of a homogeneous organic polymer (such as PMMA, or PET, or PEEK, or PS, or PE, or COC) or inorganic polymer (such as PDMS or ORMOCER); (ii) exposure of the polymer to an etching plasma such as oxygen (O2) or sulphur hexafluoride (SF6) or a mixture of oxygen (O2) and sulphur hexafluoride (SF6), or mixtures of etching gases with inert gases such as any Noble gas (Ar, He, Ne, Xe).

Abstract: According to one embodiment, a pattern formation method is disclosed. The method can form a patterning film on a substrate. The method can transfer a form pattern provided on a template onto an imprint material by bringing the template into contact with the imprint material. The imprint material is coated on the patterning film. In addition, the method can perform patterning including etching the patterning film using the imprint material including the transferred form pattern as a mask. The transferring is implemented using a condition determined based on data relating to at least one selected from a dimension and a shape of a pattern of the patterning film after the patterning.

Abstract: An aqueous curable imprintable medium having at least one curable compound according to Formula 1: wherein R1-R3 are hydrolysable alkoxy groups, and wherein R4 is selected from the group consisting of C1-C6 linear alkyl groups, hydrolysable alkoxy groups and a phenyl group; and a photo-acid generator or a photo-base generator. Such a medium may have an extended shelf-life and may facilitate the formation of highly reproducible patterned layers when used in an imprint lithography process.

Abstract: Functional nanoparticles may be formed using at least one nano-lithography step. In one embodiment, sacrificial material may be patterned on a multi-layer substrate using an imprint lithography system. The pattern may be further etched into the multi-layer substrate. Functional material may then be deposited on multi-layer substrate and solidified. At least a portion of the functional material may then be removed to provide a crown surface exposing pillars. Pillars may be removed from multi-layer substrate forming functional nanoparticles.

Abstract: A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method of patterning the transparent conductive film, an inorganic material substrate is prepared. An organic material pattern is formed at a desired area of the inorganic material substrate. A thin film having a different crystallization rate depending upon said inorganic material and said organic material is formed. The thin film is selectively etched in accordance with said crystallization rate.

Abstract: An imprint template is provided with a shallower field bordering the patterned region. The shallower field can be formed with additional lithography/etch steps after (or before) the formation of the features in the patterned region. The template is used to establish a thin film pattern with a field thickness that is shallower than the pattern. A shallower field bordering the patterned region alleviates sidewall re-deposition during ion mill. In a planarization/etch-back process, a thinner field helps to achieve a flat top surface by compensating for the thickness variation caused by different filling ratios. Fabrication of the recessed field template comprises a multi-step patterning process. The initial patterns are formed using a convention fabrication process.

Abstract: A product and process for producing heat-transfers having a contrasting-color 3D appearance comprising a printed layer of woven fabric substrate adhered to a colorfast textile substrate. The woven fabric substrate includes a top substrate printed with a design logo. The underlying substrate is a solid color. The design logo/is engraved away in patterned designs using a galvanometric laser to reveal the contrasting substrate in desired areas, giving a layered embroidery 3D visual effect. These heat activated appliqués of the present invention are particularly suitable for use in forming decorations for apparel, bags and home furnishings. Their soft tactile hand feel does not cause discomfort to the wearer. The resulting product has superior care and durability characteristics, is more wash fast and can be ironed, and has superior appearance characteristics to other types of heat transfer appliqués. The heat transfer capability of the appliqué allows for fast customization of finished garments.

Abstract: Light in the visible spectrum is modulated using an array of modulation elements, and control circuitry connected to the array for controlling each of the modulation elements independently, each of the modulation elements having a surface which is caused to exhibit a predetermined impedance characteristic to particular frequencies of light. The amplitude of light delivered by each of the modulation elements is controlled independently by pulse code modulation. Each modulation element has a deformable portion held under tensile stress, and the control circuitry controls the deformation of the deformable portion. Each deformable element has a deformation mechanism and an optical portion, the deformation mechanism and the optical portion independently imparting to the element respectively a controlled deformation characteristic and a controlled modulation characteristic. The deformable modulation element may be a non-metal.

Abstract: The present invention relates to a micro metal mold for manufacturing micro metal sheet products provided with a fine or micro opening(s) or an aperture(s) together with or independently of a groove(s) and/or a protrusion(s), a method for making the mold by the electroforming or electroplating method, a method for making the mold and micro metal sheet products manufactured by using the micro metal mold. According to the invention, it is possible to manufacture micro metal sheet products, provided with fine and precise dimensions of an opening(s) as well as a groove(s) and/or a protrusion(s), under a mass production.

Abstract: An enhanced process forming a material pattern on a substrate deposits the material anisotropically on resist material patterned to correspond to an image of the material pattern. The material is etched isotropically to remove a thickness of the material on sidewalls of the resist pattern while leaving the material on a top surface of the resist pattern and portions of the surface of the substrate. The resist pattern is removed by dissolution thereby lifting-off the material on the top surface of the resist pattern while leaving the material on the substrate surface as the material pattern. Alternately, a first material layer is deposited on the resist pattern and a second material layer is deposited and planarized. The second material layer is etched exposing the first material while leaving the second material in features of the resist pattern. The first material and the resist are removed leaving the first material pattern.

Abstract: In one embodiment of the present invention, a halogen-free plasma etch processes is used to define a feature in a multi-layered masking stack including an amorphous carbon layer. In a particular embodiment, oxygen (O2), nitrogen (N2), and carbon monoxide (CO) are utilized to etch the amorphous carbon layer to form a mask capable of producing sub-100 nm features in a substrate film having a reduced line edge roughness value. In another embodiment, the present invention employs an O2 plasma pretreatment preceding the halogen-free amorphous carbon etch to first form an oxidized silicon region in a patterned photoresist layer to increase the selectivity of the amorphous carbon etch relative to a patterned photoresist layer containing unoxidized silicon.

Abstract: Fabricating a cross-point memory structure using two lithography steps with a top conductor and connector or memory element and a bottom conductor orthogonal to the top connector. A first lithography step followed by a series of depositions and etching steps patterns a first channel having a bottom conductor. A second lithography step followed by a series of depositions and etching steps patterns a second channel orthogonal to the first channel and having a memory element connecting the an upper conductor and the lower conductor at their overlaid intersections.

Abstract: Embodiments of the invention generally relate to compositions of mesa etch solutions and methods for mesa etching materials on a wafer during an epitaxial lift off (ELO) process. The wafer usually contains an etch stop layer disposed thereon and a laminated epitaxial material disposed on the etch stop layer. In one embodiment, an etch process includes exposing the wafer to a non-selective etch solution and subsequently exposing the wafer to a selective etch solution while peeling the laminated epitaxial material from the wafer. The selective etch solution may contain succinic acid, an ammonium hydroxide compound, and an oxidizing agent, such as hydrogen peroxide. The selective etch solution may have a GaAs/AlAs selectivity of about 600, about 1,000, about 1,400, or greater. The non-selective etch solution may be an aqueous solution containing sulfuric acid and hydrogen peroxide.

Abstract: Systems, methods, and processes for forming imprint lithography templates from a multi-layer substrate are described. The multi-layer substrate may include a block copolymer layer positioned on a substrate layer. The block copolymer layer may include two or more domains. At least one domain may have a different composition sensitivity than another domain such that the domains have different reactions to a specific process. Reaction of the domains to the specific process may provide a pattern in the block copolymer layer. The pattern may be transferred into the substrate layer to form the imprint lithography template.

Abstract: A process for etching a silicon-containing substrate to form structures is provided. In the process, a metal is deposited and patterned onto a silicon-containing substrate (commonly one with a resistivity above 1-10 ohm-cm) in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. The metallized substrate is submerged into an etchant aqueous solution comprising about 4 to about 49 weight percent HF and an oxidizing agent such as about 0.5 to about 30 weight percent H2O2, thus producing a metallized substrate with one or more trenches. A second silicon etch is optionally employed to remove nanowires inside the one or more trenches.

Abstract: The inventive method includes a preparation step during which the substrate is covered with a layer, a pressing step in which a mould including a pattern of recesses and protrusions is pressed into part of the thickness of the aforementioned layer, at least one etching step in which the layer is etched until parts of the surface of the substrate have been stripped, and a substrate etching step whereby the substrate is etched using an etching pattern which is defined from the mould pattern. The preparation step includes a sub-step consisting of the formation of a lower sub-layer of curable material, a step involving the curing of said layer and a sub-step including the formation of an outer sub-layer which is adjacent to the cured sub-layer. Moreover, during the pressing step, the above-mentioned protrusions in the mould penetrate the outer sub-layer until contact is reached with the cured sub-layer.

Abstract: An information storage medium and method of manufacturing such a medium, particularly applicable to computer hard disks. An information storage medium includes an approximately plane front face and a back face, the medium being read and/or written by a device placed facing the front face. The back face includes recessed areas and all or part of sidewalls and/or the bottom of the recessed areas is covered with a magnetic deposit, the distance separating the front face from the deposit being such that the device can read and/or write information in the deposit.

Abstract: A paper pad having a three dimensional image is disclosed wherein the faces or sides of the pad comprise a plurality of paper sheet edges formed into three dimensional surfaces extending from the common planar surface of the side or indenting into said surface. According to one embodiment, the three dimensional surfaces are created through computer numeric controlled (CNC) carving of a compressed side of the paper pad to create an aesthetically pleasing, complex three dimensional design. According to another embodiment, a shaped die is applied to a compressed side of a paper pad under selected conditions of time, temperature, pressure and humidity to deboss a portion of the paper material and produce a three dimensional design in the surface of the compressed side.

Abstract: A structure is provided that is formed with a template defining a pattern having nanoscale features. The template may be positioned on a substrate and include a resist layer having openings formed therein, where the template is configured to accommodate the controlled assembly of nanoscale objects.

Abstract: A device and method include forming a mask on a substrate supporting a plurality of metallic nanocrystals such that a portion of the metallic nanocrystals is exposed. Protective shells are formed about the exposed metallic nanocrystals. Unprotected metallic nanocrystals are removed.

Abstract: A method for fabricating magnetic side shields for an MR sensor of a magnetic head. Following the deposition of MR sensor layers, a first DLC layer is deposited. Milling mask layers are then deposited, and outer portions of the milling mask layers are removed such that a remaining central portion of the milling mask layers is formed having straight sidewalls and no undercuts. Outer portions of the sensor layers are then removed such that a relatively thick remaining central portion of the milling mask resides above the remaining sensor layers. A thin electrical insulation layer is deposited, followed by the deposition of magnetic side shields. A second DLC layer is deposited and the remaining mask layers are then removed utilizing a chemical mechanical polishing (CMP) liftoff step. Thereafter, the first DLC layer and the second DLC layer are removed and a second magnetic shield layer is then fabricated thereabove.

Abstract: A morphous inorganic nitrides are used as release layers on templates for nanoimprint lithography. Such a layer facilitates the release of a template from a cured, hardened composition into which the template has transferred a pattern, by reducing the adhesion energy between the release layer and the cured, hardened composition. The release layer may include one or more metallic or semiconductor elements such as Al, Mn, B, Co, Ti, Ta, W and Ge.

Abstract: The present invention relates to a process for producing a structure having holes at prescribed positions. The structure is produced through steps of (A) providing an impressing member having protrusions, and a substrate, (B) forming a layer, on the substrate, from a material having a less strength than the impressing member, (C) forming depressions by impressing the impressing member on the layer corresponding to protrusions of the impressing member, (D) etching the layer to bare at least a part of the surface of the substrate, and (E) anodizing the substrate to form holes on the substrate.

Abstract: Susceptibility of darkfield etch masks (majority of the mask area is opaque) to pinhole defects, transferred pattern, non-uniformity, etc. due to ejector dropout or drop misdirection, and long duty cycles due to large-area coverage, when using digital lithography (or print patterning) is addressed by using a clear-field print pattern that is then coated with etch resist material. The printed clear field pattern is selectively removed to form an inverse pattern (darkfield) within the coated resist layer. Etching then removes selected portions of an underlying (e.g., encapsulation, conductive, etc.) layer. Removal of the mask produces a layer with large-area features with substantially reduced defects.

Abstract: This disclosure describes system(s) and/or method(s) enabling contacts for individual nanometer-scale-thickness layers of a multilayer film.

Abstract: A method of fabricating an inkjet print head includes forming at least one energy generating element to eject ink on a substrate. A chamber layer and a nozzle layer are formed on the substrate, wherein the nozzle layer has a nozzle corresponding to the energy generating elements, and at least one of the chamber layer and the nozzle layer is formed using a photocurable resin composition that includes a photo-base generator, an epoxy resin and a non-photoreactive solvent.

Abstract: A method of forming a magnetoresistive junction in a process of manufacturing a magnetoresistive memory cell includes providing a semiconductor substrate having at least one via contact layer on a main surface thereof, depositing a layered structure of magnetoresistive junction layers on the via contact layer, depositing an etch stop layer on the layered structure of magnetoresistive junction layers, depositing at least one hard mask layer on the etch stop layer, patterning and etching the hard mask layer to create a hard mask, removing of polymer residuals from the hard mask, etching of the etch stop layer, and etching the layered structure of magnetoresistive junction layers to create the magnetoresistive junction. The etching stops at the etch stop layer.

Abstract: This method of forming a carbonaceous material projection structure includes: the step of applying a resist 11 onto a diamond substrate 10; the step of forming holes 12 in the applied resist 11, the holes 12 being provided according to a predetermined arrangement, a wall 12b of each of the holes 12 being inversely tapered from an aperture 12a toward a bottom; the step of depositing a mask material through the aperture 12a to form a mask deposition 14 in each of the holes 12; the step of lifting off a mask material 13 deposited on the resist 11 together with the resist 11; and etching the diamond substrate 10 using the mask deposition 14 as a mask to form a carbonaceous material projection.

Abstract: A method is provided for producing a lithographic pattern using a mask that includes the same materials as the material to be etched, allowing the pattern to be transferred and the etch mask to be removed in one step. In accordance with features of the invention, the method includes building up of a layer or layers of material of specific thickness on top of a substrate so that temporal control of an etching process allows formation of the desired pattern. Different exchange bias directions can be established by the use of shape anisotropy for the exchange biased component of a spin valve device. This enables several different magnetic reference directions to be present on a single chip, which allows a more compact magnetic field sensor to be developed. In accordance with features of the invention, different field directions are established on one single chip by using shape anisotropy.

Abstract: A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method of patterning the transparent conductive film, an inorganic material substrate is prepared. An organic material pattern is formed at a desired area of the inorganic material substrate. A thin film having a different crystallization rate depending upon said inorganic material and said organic material is formed. The thin film is selectively etched in accordance with said crystallization rate.

Abstract: A method of wiring formation includes forming a feeder film partially on a substrate, forming on the substrate a plating base film via a physical film making method so that the plate base film partially overlaps the feeder film, forming a plated wiring on the plating base film using an electrolytic plating, and selectively removing at least an area of the feeder film which is exposed from the plated wiring, using a wet etching process.

Abstract: A method of manufacturing a magneto-resistive device is provided for reducing a degradation in device characteristics due to annealing. The method includes the steps of depositing constituent layers, which make up a magneto-resistive layer on a base, patterning one or more layers of the constituent layers, forming an insulating layer in a region in which the one or more layers of the constituent layers have been removed by the patterning. For forming the insulating layer, the insulating layer is deposited while irradiating an ion beam of a gas mainly containing a rare gas toward the base after the step of patterning.

Abstract: In a method of forming a patterned thin film, first, an etching stopper film and a film to be patterned are formed in this order on a base layer. Next, a patterned first film is formed on the film to be patterned. Next, a second film is formed over an entire surface on top of the film to be patterned and the first film. Then, by removing the first film, an etching mask is obtained from the second film formed on the film to be patterned. The film to be patterned is selectively etched through dry etching using the etching mask. A patterned thin film having a groove is thereby obtained.

Abstract: The present invention provides a method of fabricating an imprint mold for molding a structure. The method includes directing a first and a second flux for forming a first material and a second material, respectively, to a substrate to form a layered structure having alternating layers of the first and the second material. The method also includes controlling a thickness of the first and the second layers by controlling the first and the second flux and cleaving the layered structure to form a cleavage face in which sections of the layers are exposed. The method further includes etching the exposed sections of the layers using a etch procedure that predominantly etches one of the first and the second materials to form the mold having an imprinting surface with at least one indentation for molding the structure. At least one of the fluxes is controlled so that at least one of the layers has a thickness that varies along a portion of a length of the at least one layer.

Abstract: A method is presented for fabricating a read head having a read head sensor and a hard bias/lead layer which includes depositing a strip of sensor material in a sensor material region, and depositing strips of fast-milling dielectric material in first and second fast-milling dielectric material regions adjacent to the sensor material region. A protective layer and a layer of masking material is deposited on the strip of sensor material and the strips of fast-milling dielectric material to provide masked areas and exposed areas. A shaping source, such as an ion milling source, is provided which shapes the exposed areas. Hard bias/lead material is then deposited on the regions of sensor material and fast-milling dielectric material to form first and second leads and a cap on each of these regions. The cap of hard bias/lead material and the masking material is then removed from each of these regions.

Abstract: A manufacturing method of a magnetic head includes a process for forming a lift-off mask pattern on a magnetoresistance effect element, such that the upper part of the lift-off mask pattern is larger in size than the lower part, a process for forming a couple of electrodes on the magnetoresistance effect element using the lift-off mask pattern as a mask, and a process for removing the lift-off mask pattern. The process for forming the lift-off mask pattern is performed according to a dry etching process.

Abstract: A lift-off procedure is provided which enables prevention of damage to a wiring pattern caused by contact of a metal being peeled off from a wafer with a wiring pattern at a time of lift-off procedure. A wafer having a surface on which a pattern is formed which contains a pattern portion to be removed is soaked into a chemical liquid at an angle at which the surface faces downward.

Abstract: A method for manufacturing quartz oscillators is provided which permits quartz oscillators having an oscillation frequency, as designed, to be obtained with small variation of individual oscillation frequency and with high reliability. The method for manufacturing quartz oscillators according to the present invention comprises the steps of forming a first resist layer (300) on one surface of a quartz substrate (100), exposing said first resist layer to light of a first amount of exposure to form a patterned first masking layer (210), forming a second resist layer (400) on the other surface of said quartz substrate, exposing said second resist layer to light of a second amount of exposure via said quartz substrate to form a patterned second masking layer (410) by using said first masking layer, and etching said quartz substrate to form quartz pieces (150) by using said patterned first masking layer and said patterned second masking layer.

Abstract: Insulating layers are formed on both sides of a multilayer film, and bias layers are formed in contact with at least portions of both end surfaces of a free magnetic layer. The bias layers are formed so as not to extend to the upper surface of the multilayer film. In this construction, a sensing current from electrode layers appropriately flows through the multilayer film, and a bias magnetic field can be supplied to the free magnetic layer from the bias layers through both side surfaces of the free magnetic layer. Furthermore, the magnetic domain structure of the free magnetic layer can be stabilized to permit an attempt to decrease instability of the reproduced waveform and Barkhausen noise.

Abstract: A method of manufacturing an integrated thin film head comprises, in order to prevent short-circuit among the lead layer, upper lead layer and shield layers, a lower shield layer formed on a substrate, a lower readgap layer formed on the lower shield layer, an MR sensor layer formed on the lower readgap layer, a lead layer jointed with the MR sensor layer, an upper lead layer formed in contact with a part of the lead layer, an upper readgap layer formed to cover the MR sensor layer, lead layer and upper lead layer and an upper shield layer formed on the upper readgap layer. The part of the lead layer in contact with the upper lead layer is formed thinner than the part not contact with the upper lead layer.

Abstract: A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.

Abstract: A method of fabricating printed circuit boards integrating thick film resistor components and thin film circuit portions thereon is disclosed. This is a two-phase process, where the first phase is to create multiple thick film resistors, and the second phase is to create a thin film circuit portion on the substrate with thick film resistors in existence, involving the printing of the electrodes and the resistive coating for the thick film resistors, and the printing of a low temperature passivation layer over the resistors; and the thin film circuit is formed by titanium and copper layers over the substrate, and electroplating of interconnections to form copper plated circuit. The present fabrication process does not require drilling of holes nor electroplating of leads to the resistors, thus the whole process can be automated to a greater extent than with conventional techniques.

Abstract: A method of patterning self-assembled thin films, including forming a photoresist layer on a substrate and then patterning and etching the photoresist layer. In combination with the etched photoresist layer, a self-assembled layer is formed on the substrate using LbL self-assembly.

Abstract: A current-perpendicular-to the-plane (CPP) magnetoresistive device, such as a magnetic tunnel junction (MTJ), is formed by patterning a capping layer (e.g., using resist) in the shape of a central region of an underlying free ferromagnetic layer that in turn resides over additional layers of the MTJ. Side regions of the capping layer are removed by ion milling or etching down into the free ferromagnetic layer. Unmasked side regions of the ferromagnetic layer are then oxidized to render them locally non-ferromagnetic and electrically insulating.