Mechanically Forming Pattern Into A Resist Patents (Class 216/44)
  • Patent number: 11266022
    Abstract: A method of etching an electrically conductive layer structure during manufacturing a component carrier is provided. The method includes carrying out a first etching of at least one exposed region of an electrically conductive layer structure by a first etching composition having a photo-hardenable compound to thereby form a recess in the electrically conductive layer structure, hardening the photo-hardenable compound by irradiation with photons selectively on an upper side wall portion of the recess to thereby cover the upper side wall portion with a photo-hardened compound, carrying out a second etching by a second etching composition selectively on a side wall portion and/or bottom portion of the recess being not covered with the photo-hardened compound, and subsequently removing the photo-hardened compound from the side wall portion. In addition, a component carrier is provided.
    Type: Grant
    Filed: May 20, 2020
    Date of Patent: March 1, 2022
    Assignee: AT&S Austria Technologie & Systemtechnik Aktiengesellschaft
    Inventor: Jolanta Klocek
  • Patent number: 11249394
    Abstract: An imprint method for forming a pattern of an imprint material on a substrate-side pattern region of a substrate by using a mold. The method includes deforming a partial region of the substrate, the partial region corresponding to the substrate-side pattern region, by irradiating the substrate with light that has passed through the mold and has a first wavelength different from light having a second wavelength that is used for curing the imprint material, and curing the imprint material by irradiating the light having the second wavelength in a state in which the substrate-side pattern region is deformed and the mold is contacted with the imprint material. The step of deforming includes forming an uneven temperature distribution on the substrate-side pattern region by irradiation of the light having the first wavelength with an uneven illumination distribution.
    Type: Grant
    Filed: April 20, 2020
    Date of Patent: February 15, 2022
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tatusya Hayashi, Yosuke Murakami, Noriyasu Hasegawa, Hirotoshi Torii, Yusuke Tanaka
  • Patent number: 10784122
    Abstract: A method of producing an electroconductive substrate including a base material, and an electroconductive pattern disposed on one main surface side of the base material includes: a step of forming a trench including a bottom surface to which a foundation layer is exposed, and a lateral surface which includes a surface of a trench formation layer, according to an imprint method; and a step of forming an electroconductive pattern layer by growing metal plating from the foundation layer which is exposed to the bottom surface of the trench.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: September 22, 2020
    Assignee: TDK CORPORATION
    Inventors: Takashi Daitoku, Susumu Taniguchi, Akiko Seki, Atsushi Sato, Yuhei Horikawa, Makoto Orikasa, Hisayuki Abe
  • Patent number: 10611063
    Abstract: The present invention provides an imprint apparatus for performing an imprint process which includes molding of imprint material on a substrate with a mold and releasing of the mold from the molded imprint material, the apparatus including a substrate holder configured to hold the substrate, a mold holder configured to hold the mold, a driving device configured to perform driving, for the releasing of the mold, of at least one of the substrate holder and the mold holder, and a detector configured to detect completion of the releasing of the mold by the driving device.
    Type: Grant
    Filed: November 14, 2014
    Date of Patent: April 7, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Genki Murayama
  • Patent number: 10573608
    Abstract: Embodiments of the invention include a microelectronic device that includes a first die having a silicon based substrate and a second die coupled to the first die. In one example, the second die is formed with compound semiconductor materials. The microelectronic device includes a substrate that is coupled to the first die with a plurality of electrical connections. The substrate including an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: February 25, 2020
    Assignee: Intel Corporation
    Inventors: Georgios C. Dogiamis, Telesphor Kamgaing, Eric J. Li, Javier A. Falcon, Yoshihiro Tomita, Vijay K. Nair, Shawna M. Liff
  • Patent number: 10546835
    Abstract: Embodiments of the invention include a microelectronic device that includes a transceiver coupled to a first substrate and a second substrate coupled to the first substrate. The second substrate includes an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher. An interposer substrate can provide a spacing between the first and second substrates.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: January 28, 2020
    Assignee: Intel Corporation
    Inventors: Vijay K. Nair, Georgios C. Dogiamis, Telesphor Kamgaing
  • Patent number: 10401676
    Abstract: A method of manufacturing a wire grid polarizer for a display apparatus includes the steps of forming a first layer on a base substrate including an active area and a peripheral area surrounding the active area, forming a hard mask layer on the first layer, coating an imprint resin on the hard mask layer, forming an imprint resin pattern by imprinting a stamp on the imprint resin, wherein the stamp is larger than the base substrate, forming a hard mask pattern by patterning the hard mask layer using the imprint resin pattern, forming a wire grid pattern layer by pattering the first layer using the hard mask pattern, forming a photoresist pattern in the active area on the base substrate, removing the hard mask pattern and the wire grid pattern layer in the peripheral area using the photoresist pattern, and forming a capping layer on the wire grid pattern.
    Type: Grant
    Filed: October 3, 2017
    Date of Patent: September 3, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Sungman Kim, Junho Song, Hanjun Yu, Seon Uk Lee, Seongsu Lim, Tae Hyung Hwang
  • Patent number: 10381228
    Abstract: An epitaxial process applying light illumination includes the following steps. A substrate is provided. A dry etching process and a wet etching process are performed to form a recess in the substrate, wherein an infrared light illuminates while the wet etching process is performed. An epitaxial structure is formed in the recess.
    Type: Grant
    Filed: February 25, 2015
    Date of Patent: August 13, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yu-Ying Lin, Ted Ming-Lang Guo, Chin-Cheng Chien, Chih-Chien Liu, Hsin-Kuo Hsu, Chin-Fu Lin, Chun-Yuan Wu
  • Patent number: 9962863
    Abstract: A mold may include a plurality of nanostructures configured to form a lithographic pattern when imprinted into a material. Imprinting may include imprinting the mold a first predetermined distance, modifying a temperature of the material, and altering a position of the mold based on the temperature modification. One or more thermal elements may alter a temperature of a first section of the material and/or one or more nanostructures for a predetermined pulse time less than an equilibrium time required for the mold and/or material to reach a stable temperature state. A first thermal element may selectively alter the temperature of a first section of the material and/or a first nanostructure and a second thermal element may selectively alter the temperature of a second section of the material and/or a second nanostructure. The one or more thermal elements may include one or more thermoelectric elements.
    Type: Grant
    Filed: January 3, 2013
    Date of Patent: May 8, 2018
    Assignee: ELWHA LLC
    Inventors: Roderick A. Hyde, Jordin T. Kare, Thomas A. Weaver
  • Patent number: 9696202
    Abstract: A method for making a surface enhanced Raman scattering device in accordance with one aspect of the present invention comprises a first step of forming a nanoimprint layer on a main surface of a wafer including a plurality of portions each corresponding to a substrate; a second step of transferring, by using a mold having a pattern corresponding to a fine structural part, the pattern to the nanoimprint layer after the first step, and thereby forming the formed layer including the fine structural part for each portion corresponding to the substrate; a third step of forming a conductor layer on the fine structural part after the second step; and a fourth step of cutting the wafer into each portion corresponding to the substrate after the second step.
    Type: Grant
    Filed: December 16, 2015
    Date of Patent: July 4, 2017
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Masashi Ito, Katsumi Shibayama, Takashi Kasahara, Yoshihiro Maruyama
  • Patent number: 9610727
    Abstract: An imprint lithography apparatus is disclosed that has a first array of template holders, a second array of template holders, and a substrate table arranged to support a substrate to be imprinted, wherein the first array of template holders is arranged to hold an array of imprint templates that can be used to imprint a first array of patterns onto the substrate, and the second array of template holders is arranged hold an array of imprint templates that can be used to imprint a second array of patterns onto the substrate, the patterns imprinted by the second array being interspersed between the patterns imprinted by the first array.
    Type: Grant
    Filed: June 13, 2014
    Date of Patent: April 4, 2017
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Yvonne Wendela Kruijt-Stegeman, Johan Frederik Dijksman, Aleksey Yurievich Kolesnychenko, Karel Diederick Van Der Mast, Klaus Simon, Raymond Jacobus Wilhelmus Knaapen, Krassimir Todorov Krastev, Sander Frederik Wuister
  • Patent number: 9507256
    Abstract: An imprint method for imprinting an imprint pattern of a mold onto a pattern formation material on a substrate so as to realize a high throughput includes the steps of bringing the imprint pattern and the pattern formation material into contact with each other; applying a first pressure between the mold and the substrate to increase a contact area between the imprint pattern and the pattern formation material; and adjusting a positional relationship between the mold and the substrate at a second pressure lower than the first pressure.
    Type: Grant
    Filed: September 30, 2010
    Date of Patent: November 29, 2016
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Junichi Seki, Nobuhito Suehira
  • Patent number: 9366395
    Abstract: An optical element for light outcoupling and/or conversion of light includes a light-emitting semiconductor chip with at least one layer selected from a wavelength conversion layer, a scattering layer, a light outcoupling layer and a lens layer, which each includes a plastics material processable in a compression molding method.
    Type: Grant
    Filed: May 23, 2012
    Date of Patent: June 14, 2016
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Kirstin Petersen, Stephan Preuss, Markus Pindl, Markus Boss, Martin Brandl
  • Patent number: 9341952
    Abstract: In the present invention, photolithography processing is performed on a substrate to form a resist pattern over the substrate, and a treatment agent is caused to enter a side surface of the resist pattern and metal is caused to infiltrate the side surface of the resist pattern via the treatment agent, the formed resist pattern has a high etching selection ratio with respect to a film to be treated on the substrate so as to suppress a so-called pattern collapse, therefore.
    Type: Grant
    Filed: February 25, 2014
    Date of Patent: May 17, 2016
    Assignee: Tokyo Electron Limited
    Inventors: Fumiko Iwao, Satoru Shimura
  • Patent number: 9335627
    Abstract: A template for imprinting in which a pattern is transferred onto a first substrate applied curable resin thereon, including a second substrate having a surface to be contacted with the curable resin, a concave portion provided on the surface and corresponding to a pattern to be transferred onto the first substrate, and at least one convex portion arranged in the concave portion to decrease volume of the concave portion.
    Type: Grant
    Filed: April 14, 2010
    Date of Patent: May 10, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yukiko Kikuchi, Shinichi Ito
  • Patent number: 9302424
    Abstract: A mold may include a plurality of nanostructures configured to form a lithographic pattern when imprinted into a material. Imprinting may include imprinting the mold a first predetermined distance, modifying a temperature of the material, and altering a position of the mold based on the temperature modification. One or more thermal elements may alter a temperature of a first section of the material and/or one or more nanostructures for a predetermined pulse time less than an equilibrium time required for the mold and/or material to reach a stable temperature state. A first thermal element may selectively alter the temperature of a first section of the material and/or a first nanostructure and a second thermal element may selectively alter the temperature of a second section of the material and/or a second nanostructure. The one or more thermal elements may include one or more thermoelectric elements.
    Type: Grant
    Filed: January 3, 2013
    Date of Patent: April 5, 2016
    Assignee: ELWHA, LLC
    Inventors: Roderick A. Hyde, Jordin T. Kare, Thomas A. Weaver
  • Patent number: 9201298
    Abstract: An imprint method of transferring a pattern formed on a mold onto a resin on a substrate. The substrate is held on a holding surface by suction. A shape of a substrate-side pattern area pre-existing on the substrate is deformed. A resin on the pattern area is brought in contact with the mold. Positions of the pattern of the mold and of the pattern area are adjusted. The resin is cured and the mold is released from the resin in contact with the mold. A deformation force, which is greater than a maximum static frictional force acting between a rear surface of the substrate corresponding to the pattern area and the holding surface, is applied to the substrate. A suction force acting on the rear surface of the substrate corresponding to the pattern area in deforming is less than a suction force acting on the substrate in adjusting.
    Type: Grant
    Filed: October 9, 2012
    Date of Patent: December 1, 2015
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Kazuki Nakagawa, Noriyasu Hasegawa, Yosuke Murakami, Takahiro Matsumoto
  • Patent number: 9201297
    Abstract: A template for imprinting in which a pattern is transferred onto a first substrate applied curable resin thereon, including a second substrate having a surface to be contacted with the curable resin, a concave portion provided on the surface and corresponding to a pattern to be transferred onto the first substrate, and at least one convex portion arranged in the concave portion to decrease volume of the concave portion.
    Type: Grant
    Filed: May 25, 2012
    Date of Patent: December 1, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yukiko Kikuchi, Shinichi Ito
  • Patent number: 9156193
    Abstract: A transfer device 5 transfers a fine transfer pattern M1 formed on a mold M to a molding target W. The transfer device includes: a base member 47 including a press body 31; a moving member 49 including a molding target placing body 33 that sandwiches and presses the mold M and the molding target W in cooperation with the press body 31, and is provided on the base member 47 so that the molding target placing body 33 can move; and a moving body supporting body 51 that includes a guide portion 71, and is engaged with and provided integrally on the base member 47 only in a region of the base member 47 elastically deformed very slightly by reaction force when the press is performed, the region being a region where a flexure angle becomes substantially “0”.
    Type: Grant
    Filed: February 24, 2011
    Date of Patent: October 13, 2015
    Assignee: Toshiba Kikai Kabushiki Kaisha
    Inventors: Shinya Itani, Hiromi Nishihara, Takato Baba, Takaharu Tashiro, Takafumi Ookawa, Hidetoshi Kitahara
  • Patent number: 9138977
    Abstract: There is provided a process for forming a laminated structure, the process comprising the step of bonding a polymer film to an array of structures disposed on a substrate, and wherein a plurality of cavities are formed between the polymer film and the array of structures during the bonding.
    Type: Grant
    Filed: March 15, 2011
    Date of Patent: September 22, 2015
    Assignee: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
    Inventors: Jarrett Dumond, Hong Yee Low
  • Patent number: 9115298
    Abstract: The invention relates to a strippable adhesion composition, and it has the advantage of good stripability. The invention also provides a strippable material and method for manufacturing the same and an electronic device and method for manufacturing the same.
    Type: Grant
    Filed: November 21, 2013
    Date of Patent: August 25, 2015
    Assignee: CHI MEI CORPORATION
    Inventor: Kuang-Chieh Li
  • Patent number: 9048429
    Abstract: The present invention provides a method for enhancing optoelectronic properties of polymers that contain conjugated moieties in their molecular structures (hereby denoted as “conjugated polymers”), to be used in lighting, photovoltaics, other various optoelectronic devices and applications. The method of the present invention includes preparing a conjugated polymer layer or multiple conjugated polymer layers and imprinting the conjugated polymer layer or layers through the application of a mold or multiple molds.
    Type: Grant
    Filed: March 12, 2012
    Date of Patent: June 2, 2015
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Arnold Chang-Mou Yang, Chien-Chung Chen, Po-Tsun Chen
  • Patent number: 9009950
    Abstract: Disclosed herein is a method for manufacturing a high frequency inductor, the method including; forming a primary coil for manufacturing the high frequency inductor on a wafer; coating a primary PSV on the wafer on which the primary coil is formed; forming a secondary coil for manufacturing the high frequency inductor, after the coating of the primary PSV; coating a secondary PSV, after the forming of the secondary coil; forming a barrier layer on an electrode portion to be exposed of the high frequency inductor, after the coating of the secondary PSV; filling and curing an insulating resin on the wafer, after the forming of the barrier layer; and polishing the cured resin up to the barrier layer to expose the electrode.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: April 21, 2015
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Sang Moon Lee, Young Seuck Yoo, Jong Yun Lee, Young Do Kweon, Sung Kwon Wi
  • Patent number: 8961801
    Abstract: In an embodiment, there is provided an imprint lithography method that includes providing a first amount of imprintable medium on a first area of a substrate, the first amount of imprintable medium, when fixed, having a first etch rate; and providing a second amount of imprintable medium on a second, different area of the substrate, the second amount of imprintable medium, when fixed, having a second, different etch rate.
    Type: Grant
    Filed: August 26, 2010
    Date of Patent: February 24, 2015
    Assignee: ASML Netherlands B.V.
    Inventors: Sander Frederik Wuister, Vadim Yevgenyevich Banine, Johan Frederik Dijksman, Yvonne Wendela Kruijt-Stegeman, Jeroen Herman Lammers, Roelof Koole
  • Patent number: 8962081
    Abstract: According to one embodiment, there is provided a template forming method that transfers a pattern from a first template to a to-be-processed substrate and subjects the to-be-processed substrate to a processing process to form a second template by using an imprinting method, includes forming a first resist film on a pattern forming region on the to-be-processed substrate, selectively forming a second resist film on a mark forming region on the to-be-processed substrate, transferring a concavo-convex pattern formed on the first template to the first resist film, and processing the to-be-processed substrate with the first resist film to which the concavo-convex pattern is transferred and the second resist film used as a mask.
    Type: Grant
    Filed: March 18, 2011
    Date of Patent: February 24, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Masato Saito
  • Publication number: 20150044417
    Abstract: A resist layered product (30) is provided with an inorganic substrate (21), first resist layer (22) provided on one main surface of the inorganic substrate (21), and second resist layer (23), provided on the first resist layer (22), provided with a concavo-convex structure (23a) on its surface. In the concavo-convex structure (23a), a thickness of a residual film after transfer is 50 nm or less, the ratio (lcv/lcc) of a top width of convex-portion (lcv) to an opening width of concave-portion (lcc) of a fine pattern of a mold is in a predetermined range, and the ratio (Vr2/Vcm) between a concave-portion volume (Vcm) of the fine pattern of the mold and a volume (Vr2) of the second resist layer (23) is in a predetermined range. It is possible to easily form a resist mask (25) having a thin and uniform residual film on the inorganic substrate (21).
    Type: Application
    Filed: March 11, 2013
    Publication date: February 12, 2015
    Applicant: ASAHI KASEI E-MATERIALS CORPORATION
    Inventor: Jun Koike
  • Patent number: 8932474
    Abstract: A method of making an imprinted micro-wire structure includes providing a substrate and first, second, and third different stamps. A curable first layer is provided in relation to a substrate and imprinted with first, second, and third micro-channels using the first stamp. First, second, and third micro-wires are formed in the first, second, and third micro-channels. A curable second layer is provided adjacent to the first layer and imprinted with first and second connecting micro-channels. First and second connecting micro-wires are formed in the first and second connecting micro-channels. A curable third layer is provided and imprinted with a bridge micro-channel and a bridge micro-wire formed in the bridge micro-channel. The first and second micro-wires, the first and second connecting micro-wires, and the bridge micro-wire are electrically connected and electrically isolated from the third micro-wire.
    Type: Grant
    Filed: August 28, 2013
    Date of Patent: January 13, 2015
    Assignee: Eastman Kodak Company
    Inventor: Ronald Steven Cok
  • Publication number: 20140374380
    Abstract: A stamper of an embodiment includes: a base portion having a main surface; and a plurality of guides arranged on the main surface in mutually different first and second directions and serving as references of arrangement of a plurality of self-assembled dots. A distance between the guides in a third direction is within a range of an integer m1±0.05 times of a pitch of the plural self-assembled dots. The third direction corresponds to a third vector obtained by combining a first vector corresponding to the arrangement of the guides in the first direction and a second vector corresponding to the arrangement of the guides in the second direction. A distance between the plural guides in the first direction falls out of a range of an integer m2±0.15 times of the pitch of the plural self-assembled dots.
    Type: Application
    Filed: January 29, 2014
    Publication date: December 25, 2014
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Masahiro KANAMARU, Yoshiyuki KAMATA, Ryosuke YAMAMOTO, Takeshi OKINO, Akira KIKITSU, Katsuya SUGAWARA, Yasuaki OOTERA, Tomoyuki MAEDA
  • Publication number: 20140367358
    Abstract: A composition for forming a pattern includes: about 1% to about 10% by weight of a liquid prepolymer, about 40% to about 60% by weight of an acrylate having a hydrophilic group, about 10% to about 20% by weight of a viscosity modifier, about 1% to about 5% by weight of a photoinitiator, and an additive.
    Type: Application
    Filed: July 28, 2014
    Publication date: December 18, 2014
    Inventor: Jin-Wuk KIM
  • Patent number: 8898874
    Abstract: To fabricate a plurality of piezoelectric vibrating pieces while firmly preventing a defect, a crack, or a breakage from being brought about at a wafer in the midst of fabrication, there is provided a method of fabricating a piezoelectric vibrating piece which is a method of fabricating a plurality of piezoelectric vibrating pieces from a wafer S, the method including a film forming step of respectively forming metal films M on both faces of the wafer, a patterning step of removing a region of the metal film on an inner side of an outer peripheral end of the wafer by a constant distance H, thereafter, patterning the metal film M to outer shapes of the plurality of piezoelectric vibrating pieces, an outer shape forming step of forming outer shapes of the plurality of piezoelectric vibrating pieces at the wafer a size of which is reduced by an amount of the constant distance by selectively removing the wafer by wet etching by constituting a mask by the patterned metal film, and a removing step of removing the m
    Type: Grant
    Filed: February 17, 2009
    Date of Patent: December 2, 2014
    Assignee: SII Crystal Technology Inc.
    Inventors: Mitsuo Tomiyama, Takashi Kobayashi, Kazuyoshi Sugama
  • Patent number: 8850980
    Abstract: The present invention is directed towards a choice of the shape of the patterned fields for Level 0 (patterned by imprint or photolithography or e-beam, etc.) and Level 1 (patterned by imprint) such that these shapes when tessellated together eliminate the open areas causes by the moats.
    Type: Grant
    Filed: March 30, 2007
    Date of Patent: October 7, 2014
    Assignee: Canon Nanotechnologies, Inc.
    Inventors: Sidlgata V. Sreenivasan, Philip D. Schumaker, Ian M. McMackin
  • Publication number: 20140205702
    Abstract: According to one embodiment, provided is a template in which a transfer region on which a first pattern to be transferred to a processing target is arranged and a non-transfer region surrounding the transfer region are formed on a principal surface of a template substrate. The template includes a second pattern used to measure deviation of a pattern formed on the template substrate from a design position in at least the transfer region. The second pattern arranged on the transfer region is not transferred to the processing target when a transfer to the processing target is performed through an imprint material.
    Type: Application
    Filed: April 23, 2013
    Publication date: July 24, 2014
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hidenori SATO, Kentaro OKUDA, Takeshi FUJIWARA
  • Publication number: 20140205951
    Abstract: A thermal crosslinking accelerator of a polysiloxane compound is shown by the following general formula (A-1), wherein R11, R12, R13, and R14 each represents a hydrogen atom, a halogen atom, a linear, a branched, a cyclic alkyl group having 1 to 20 carbon atoms, an optionally substituted aryl group having 6 to 20 carbon atoms, or an aralkyl group having 7 to 20 carbon atoms, wherein some or all of the hydrogen atoms in these groups may be substituted by an alkoxy group. “a”, “b”, “c”, and “d” represent an integer of 0 to 5; in the case that “a”, “b”, “c”, and “d” are 2 or more, R11, R12, R13, and R14 may form a cyclic structure.
    Type: Application
    Filed: December 27, 2013
    Publication date: July 24, 2014
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Tsutomu OGIHARA, Yusuke BIYAJIMA, Hiroyuki URANO
  • Patent number: 8764996
    Abstract: A method of patterning a first material on a polymeric substrate is described. The method includes providing a polymeric film substrate having a major surface with a relief pattern including a recessed region and an adjacent raised region, depositing a first material onto the major surface of the polymeric film substrate to form a coated polymeric film substrate, forming a layer of a functionalizing material selectively on the raised region of the coated polymeric film substrate to form a functionalized raised region and an unfunctionalized recessed region, and etching the first material from the polymeric substrate selectively from the unfunctionalized recessed region.
    Type: Grant
    Filed: October 18, 2006
    Date of Patent: July 1, 2014
    Assignee: 3M Innovative Properties Company
    Inventors: Matthew H. Frey, Khanh P. Nguyen
  • Patent number: 8760807
    Abstract: A method fabricates a magnetic transducer having a nonmagnetic layer and an ABS location corresponding to an ABS. Etch stop and nonmagnetic etchable layers are provided. A side shield layer is provided between the ABS location and the etch stop and etchable layers. A pole trench is formed in the side shield and etchable layers. The pole trench has a pole tip region in the side shield layer and a yoke region in the etchable layer. A nonmagnetic side gap layer, at least part of which is in the pole trench, is provided. A remaining portion of the pole trench has a location and profile for a pole and in which at least part of the pole is formed. A write gap and trailing shield are provided. At least part of the write gap is on the pole. At least part of the trailing shield is on the write gap.
    Type: Grant
    Filed: September 28, 2012
    Date of Patent: June 24, 2014
    Assignee: Western Digital (Fremont), LLC
    Inventors: Jinqiu Zhang, Ying Hong, Feng Liu, Zhigang Bai
  • Patent number: 8741162
    Abstract: Methods of manufacturing a nanoimprint stamp are provided. The method may include forming a pattern on a surface of a master substrate, depositing an etch barrier layer on a surface of a stamp substrate, coating a photoresist on one of the surfaces of the master substrate and the stamp substrate on which an etch barrier layer is formed, forming a photoresist pattern by pressing the master substrate against the stamp substrate, forming a hard mask by etching the etch barrier layer using the photoresist pattern, and etching the stamp substrate using the hard mask as an etch mask.
    Type: Grant
    Filed: November 5, 2013
    Date of Patent: June 3, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byung-kyu Lee, Du-hyun Lee, Woong Ko
  • Publication number: 20140138354
    Abstract: An imprint method according to this embodiment includes preparing a mold having a recessed portion, filling the recessed portion with a mold non-reactive material, pressing the mold against a resist which is applied on a base material, curing the resist in a state that the mold is pressed, and separating the mold from the base material. The mold non-reactive material is a material which does not chemically react with a material of the mold. By curing of the resist, the resist and the mold non-reactive material are coupled. When the mold is separated from the base material, the resist and the mold non-reactive material are left on the base material.
    Type: Application
    Filed: November 19, 2013
    Publication date: May 22, 2014
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yasuaki OOTERA, Yoshiyuki KAMATA, Naoko KIHARA, Yoshiaki KAWAMONZEN
  • Patent number: 8721905
    Abstract: A method for forming a minute pattern mask includes forming an etching target layer on a substrate. A convex pattern including a plurality of convex parts is formed on the etching target layer. A resin composition is coated on the convex pattern to form a resin layer including a first region neighboring the convex part and a second region positioned between the neighboring convex parts. The resin layer is ashed or etched to form the plurality of first resin patterns. The plurality of first resin patterns is processed to form a minute pattern mask including a plurality of second resin patterns. The etching target layer is etched using the plurality of second resin patterns as an etch mask to form a minute pattern.
    Type: Grant
    Filed: March 27, 2012
    Date of Patent: May 13, 2014
    Assignees: Samsung Display Co., Ltd., SNU R & DB Fountdation
    Inventors: Se-Hwan Yu, Ji Seon Lee, Yoon Ho Khang, Kahp Yang Suh, Hyoung Sick Um, Jae Jun Chae, Sung Hun Lee
  • Patent number: 8679355
    Abstract: A method of manufacturing an electronic device that comprises a microelectromechanical (MEMS) element, the method comprising the steps of: providing a material layer (34) on a first side of a substrate (32); providing a trench (40) in the material later (34); etching material from the trench (40) such as to also etch the substrate (32) from the first side of the substrate (32); grinding the substrate (32) from a second side of the substrate to expose the trench (40); and using the exposed trench (40) as an etch hole. The exposed trench (40) is used as an etch hole for releasing a portion of the material layer (34), for example a beam resonator (12), from the substrate (32). An input electrode (6), an output electrode (8), and a top electrode (10) are provided.
    Type: Grant
    Filed: May 26, 2010
    Date of Patent: March 25, 2014
    Assignee: NXP, B.V.
    Inventors: Hauke Pohlmann, Ronald Dekker, Joerg Mueller, Martin Duemling
  • Patent number: 8679357
    Abstract: Droplets of resist material are coated using the ink jet method under conditions that: the viscosity of the resist material is within a range from 8 cP to 20 cP, the surface energy of the resist material is within a range from 25 mN/m to 35 mN/m, the amount of resist material in each of the droplets is within a range from 1 pl to 10 pl, and the placement intervals among the droplets are within a range from 10 ?m to 1000 ?m. A mold is pressed against the surface of the substrate in a He and/or a depressurized atmosphere such that: an intersection angle formed between a main scanning direction of the ink jet method and the direction of the lines of the linear pattern of protrusions and recesses, which is an intersection angle when pressing the mold against the surface of the substrate, is within a range from 30° to 90°.
    Type: Grant
    Filed: March 21, 2013
    Date of Patent: March 25, 2014
    Assignee: Fujifilm Corporation
    Inventors: Satoshi Wakamatsu, Tadashi Omatsu
  • Patent number: 8663484
    Abstract: A method for manufacturing a printed circuit board enables a metal residue between wirings to be removed inexpensively without side etching of a copper layer while having sufficient insulation reliability for micro wiring working. The method includes forming a base metal layer directly at least on one face of an insulator film without an adhesive, and a copper coat layer formed on the base metal layer to form adhesiveless copper clad laminates, then forming a pattern on the adhesiveless copper clad laminates by an etching method. The etching method includes a process of etching treatment for the adhesiveless copper clad laminates with an iron (III) chloride solution or a copper (II) chloride solution containing hydrochloric acid and then, a process of treatment with an acid oxidant containing potassium permanganate.
    Type: Grant
    Filed: June 23, 2008
    Date of Patent: March 4, 2014
    Assignee: Sumitomo Metal Mining Co., Ltd.
    Inventors: Harumi Nagao, Yoshiyuki Asakawa
  • Publication number: 20140054264
    Abstract: Methods of manufacturing a nanoimprint stamp are provided. The method may include forming a pattern on a surface of a master substrate, depositing an etch barrier layer on a surface of a stamp substrate, coating a photoresist on one of the surfaces of the master substrate and the stamp substrate on which an etch barrier layer is formed, forming a photoresist pattern by pressing the master substrate against the stamp substrate, forming a hard mask by etching the etch barrier layer using the photoresist pattern, and etching the stamp substrate using the hard mask as an etch mask.
    Type: Application
    Filed: November 5, 2013
    Publication date: February 27, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Byung-kyu LEE, Du-hyun LEE, Woong KO
  • Patent number: 8658537
    Abstract: According to one embodiment, a mask manufacturing method includes acquiring positional deviation information between an actual position of a pattern formed on a mask substrate and a design position decided at the time of designing the pattern; calculating an irradiating amount and an irradiating position of radiation to be irradiated to a predetermined area of a square on the mask substrate according to the calculated positional deviation information; and irradiating the radiation based on the calculated irradiating amount and the calculated irradiating position to form in a part of the mask substrate a heterogeneous layer of which volume is expanded more greatly than that of the surrounding mask substrate region.
    Type: Grant
    Filed: February 15, 2013
    Date of Patent: February 25, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Masamitsu Itoh
  • Publication number: 20140043859
    Abstract: A light guide for converting a dot light source or a linear light source into a planar light source, and the light guide includes a light emitting surface and a reflection surface facing the light emitting surface and having a plurality of reflection patterns, wherein a width of the reflection patterns is less than 10 ?m.
    Type: Application
    Filed: December 6, 2012
    Publication date: February 13, 2014
    Applicant: Samsung Display Co., Ltd.
    Inventors: Suk Man YANG, Jong-Seo Lee
  • Patent number: 8613141
    Abstract: A manufacturing method of a liquid ejection head provided with a flow passage communicating with an ejection outlet for ejecting liquid includes steps of preparing a substrate on which a flow passage wall forming member for forming a part of a wall of the flow passage and a solid layer having a shape of a part of the flow passage contact each other, wherein the flow passage wall forming member has a height, from a surface of the substrate, substantially equal to that of the solid layer; providing on the solid layer a pattern having a shape of another part of the flow passage; providing a coating layer, for forming another part of the wall of the flow passage, so as to coat the pattern; providing the ejection outlet to the coating layer; and forming the flow passage by removing the solid layer and the pattern.
    Type: Grant
    Filed: November 11, 2008
    Date of Patent: December 24, 2013
    Assignee: Canon Kabushiki Kaisha
    Inventors: Akihiko Okano, Maki Kato, Masaki Ohsumi, Yoshinori Tagawa, Kazuhiro Asai, Masahiko Kubota, Tamaki Sato
  • Patent number: 8603349
    Abstract: Methods of manufacturing a nanoimprint stamp are provided. The method may include forming a pattern on a surface of a master substrate, depositing an etch barrier layer on a surface of a stamp substrate, coating a photoresist on one of the surfaces of the master substrate and the stamp substrate on which an etch barrier layer is formed, forming a photoresist pattern by pressing the master substrate against the stamp substrate, forming a hard mask by etching the etch barrier layer using the photoresist pattern, and etching the stamp substrate using the hard mask as an etch mask.
    Type: Grant
    Filed: June 28, 2011
    Date of Patent: December 10, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byung-kyu Lee, Du-hyun Lee, Woong Ko
  • Patent number: 8597769
    Abstract: There are provided an etching mask which has a superior thermal imprinting characteristic and also a good anti-etching characteristic, a base material with the etching mask, a microfabricated product to which those etching mask and base material are applied, and a production method of the microfabricated product. The etching mask formed of a thermoplastic resin containing at least one kind of skeleton expressed by a chemical formula (1) or a chemical formula (2) in a main chain wherein R1, R2, R3, R4, R5, R6, R7, R8 in the formulae (1), (2) can be different or same one another, each of which is a hydrogen atom, a deuterium atom, a hydrocarbon group having a carbon number of 1 to 15, a halogen atom, or a substituent group containing a hetero atom like oxygen or sulfur, and may form a ring structure one another and wherein m and n are integers equal to or greater than 0.
    Type: Grant
    Filed: November 13, 2008
    Date of Patent: December 3, 2013
    Assignee: Maruzen Petrochemical Co. Ltd.
    Inventors: Yoshiaki Takaya, Takuro Satsuka, Yoshihisa Hayashida, Takahisa Kusuura, Anupam Mitra
  • Patent number: 8574444
    Abstract: A method of fabricating a multilayer printed circuit board includes forming a first circuit-forming pattern and a via-forming pattern on a first carrier, and forming a first insulation layer; repeatedly forming inner circuit patterns and inner insulation layers over the first insulation layer by forming circuit-forming patterns and imprinting, and forming inner vias connecting the inner circuit patterns positioned on different insulation layers; forming a second circuit-forming pattern on a second carrier and inserting the first circuit-forming pattern and the second circuit-forming pattern respectively into the first insulation layer and a second insulation layer; removing the first carrier and the second carrier; forming circuit-forming grooves by removing the first circuit-forming pattern and the second circuit-forming pattern, and forming via-forming indentations connected with the circuit-forming grooves; and forming outer circuit patterns and outer vias by filling the circuit-forming grooves and the via
    Type: Grant
    Filed: August 14, 2012
    Date of Patent: November 5, 2013
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventor: Ryoichi Watanabe
  • Patent number: 8562842
    Abstract: A method of fabricating a nanoimprint stamp includes forming a resist pattern having a nano size width on a stamp substrate by performing imprint processes repeatedly. In the imprint processes, resist layers that are selectively etched are sequentially used. The stamp substrate is etched using the resist pattern as an etch mask.
    Type: Grant
    Filed: July 13, 2011
    Date of Patent: October 22, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Du-hyun Lee, Byung-kyu Lee, Woong Ko
  • Patent number: RE46628
    Abstract: A pattern forming method including: (a) forming a porous layer above an etching target layer; (b) forming an organic material with a transferred pattern on the porous layer; (c) forming, by use of the transferred pattern, a processed pattern in a transfer oxide film that is more resistant to etching than the porous layer; and (d) transferring the processed pattern to the etching target layer by use of the transfer oxide film as a mask.
    Type: Grant
    Filed: July 15, 2015
    Date of Patent: December 12, 2017
    Assignee: Toshiba Memory Corporation
    Inventor: Takashi Ohashi