Abstract: The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.

Abstract: A processing method for transferring a relief pattern of a mold to a resist includes the steps of compressing the mold having the relief pattern against the resist on a substrate, irradiating an exposure light onto the resist through the mold, vibrating the mold and the substrate relative to each other during the irradiating step, and releasing the mold from the resist.

Abstract: An imprint method for imprinting an imprint pattern of a mold onto a pattern formation material on a substrate so as to realize a high throughput includes the steps of bringing the imprint pattern and the pattern formation material into contact with each other; applying a first pressure between the mold and the substrate to increase a contact area between the imprint pattern and the pattern formation material; and adjusting a positional relationship between the mold and the substrate at a second pressure lower than the first pressure.

Abstract: A manufacturing method of a thin-film element having a lower layer with a narrower width is provided, which comprises steps of: forming a first film and a second film on the first film; forming a second layer having a width WUP obtained by trimming the second film; forming a mask film having a smaller etching rate than the first film so as to cover the second layer; forming a pattern having a width WTR larger than the width WUP, obtained by collectively trimming the mask film covering the second layer and at least an upper portion of the first film; and forming a first layer having a width WLO smaller than the width WUP or having a portion with a width WLO smaller than the width WUP, obtained by trimming the first film without changing the width WUP of the second layer.

Abstract: A processing method for forming a first pattern on a substrate to which a resist is applied includes the steps of pressing an original having a second pattern that has a relief reverse to that of the first pattern, against the resist on the substrate, and irradiating light onto the resist via the original, wherein a size of a concave of the second pattern is greater than a size of a convex of the first pattern corresponding to the concave of the second pattern, and a size of a convex of the second pattern is smaller than a size of a concave of the first pattern corresponding to the convex of the second pattern.

Abstract: When a recess of a bulb-type recess gate is formed, the recess formed in a device isolation region is formed to be separated from an edge of an active region. This structure thereby prevents damage of a semiconductor substrate of the edge of the active region and a defect during a Self Alignment Contact (SAC) process. As a result, characteristics and yield of devices improve.

Abstract: A method of lithography patterning includes forming a first material layer on a substrate; forming a first patterned resist layer including at least one opening therein on the first material layer; forming a second material layer on the first patterned resist layer and the first material layer; forming a second patterned resist layer including at least one opening therein on the second material layer; and etching the first and second material layers uncovered by the first and second patterned resist layers.

Abstract: An imprint process of a thermosetting material is described, comprising: providing a mold including pattern structures, wherein convex portions and concave portions of the pattern structures are covered with a transferred material layer; providing a substrate, wherein a thermosetting material layer and a sacrificial layer cover the substrate in sequence; performing an imprint step to transfer the transferred material layer on the convex portions onto a first portion of the sacrificial layer; etching a second portion of the sacrificial layer and the underlying thermosetting material layer by using the transferred material layer as a mask; and performing a wet stripping step by using a stripper to completely etch the sacrificial layer and the overlying transferred material layer, wherein the stripper has a first etching rate and a second etching rate to the thermosetting material layer and the sacrificial layer respectively, and a ratio of the second etching rate to the first etching rate is greater than or equ

Abstract: A method is disclosed for independently controlling track width and bevel angle of a write pole tip of a magnetic recording head. The method includes establishing the track width in the pole tip layer material utilizing E-beam lithography. A portion of this pole tip material having the established track width is protected by providing a temporary masking material to make a protected portion. At least one unprotected portion is left exposed to be shaped. This unprotected portion is then beveled to produce at least one beveled portion. The protected portion produces an upper pole tip portion which together with the beveled portion produce an improved pole tip. Also disclosed is a magnetic head having the improved pole tip, and a disk drive having a magnetic head having the improved pole tip.

Abstract: A method of fabricating an article usable in an imprint lithographic process is disclosed. The method includes patterning masking material layers on a substrate thereby forming a multi-layer mask and sequentially removing portions of the substrate based on the multi-layer mask to thereby forming a structure usable in an imprint lithographic process.

Abstract: Apparatus for double-sided imprint lithography of an apertured substrate comprises a pair of correspondingly apertured molds, a support for an assembly of the substrate and molds, and an alignment mechanism with radially movable elements for aligning the apertures of the molds and the substrate. The movable elements can be at least partially disposed in a spindle and can be removed radially outward by a conically tapered drive rod. Opposing surfaces of the substrate can then be imprinted in registration at the same time, preferably by fluid pressure imprint lithography.

Abstract: In some embodiments, the present invention is directed to methods that involve the combination of step-and-flash imprint lithography (SFIL) with a multi-tier template to simultaneously pattern multiple levels of, for example, an integrated circuit device. In such embodiments, the imprinted material generally does not serve or act as a simple etch mask or photoresist, but rather serves as the insulation between levels and lines, i.e., as a functional dielectric material. After imprinting and a multiple step curing process, the imprinted pattern is filled with metal, as in dual damascene processing. Typically, the two printed levels will comprise a “via level,” which is used to make electrical contact with the previously patterned under-level, and a “wiring level.” The present invention provides for the direct patterning of functional materials, which represents a significant departure from the traditional approach to microelectronics manufacturing.

Abstract: The inventive method includes a preparation step during which the substrate is covered with a layer, a pressing step in which a mould including a pattern of recesses and protrusions is pressed into part of the thickness of the aforementioned layer, at least one etching step in which the layer is etched until parts of the surface of the substrate have been stripped, and a substrate etching step whereby the substrate is etched using an etching pattern which is defined from the mould pattern. The preparation step includes a sub-step consisting of the formation of a lower sub-layer of curable material, a step involving the curing of said layer and a sub-step including the formation of an outer sub-layer which is adjacent to the cured sub-layer. Moreover, during the pressing step, the above-mentioned protrusions in the mould penetrate the outer sub-layer until contact is reached with the cured sub-layer.

Abstract: The present invention is a method of applying a topographical surface to a part such as a substrate without the need for low temperature softening of that part while retaining high aspect ratios and densely packed features in that topography. A substrate, selected for its ability to be processed at a given desired temperature, has a layer of material applied to its surface. This layer is selected, among other reasons, for its ability to be molded. Typically, it is expected that the substrate will be able to withstand the higher temperatures of semiconductor post-processing whereas the applied layer will be moldable at low temperatures. This combination enables low cost embossing of a topography into this surface layer. The present invention comprises means to transfer this topography from the low temperature material into the higher temperature substrate.

Abstract: A pattern transfer method includes first through third steps. In the first step, a desired pattern is transferred onto a resin layer formed on a substrate, a release layer being disposed between the substrate and the resin layer. In the second step, which is executed after the first step, the pattern having been transferred onto the resin layer is transferred to the substrate and the release layer is partially exposed. In the third step, which is executed after the second step, the release layer present between the substrate and the resin layer is dissolved and is thus removed from the substrate.

Abstract: An imprint apparatus for forming an imprinted pattern on a member to be processed or a pattern forming material on the member to be processed by using a mold having a pattern. The apparatus includes a first holding portion for holding the mold, a second holding portion for holding the member to be processed, and a support portion for partially supporting the member to be processed at a position opposite to the mold held by the first holding portion. The second holding portion is movable in a direction of a first axis and a direction of a second axis and is also movable in a direction parallel to a plane defined by the first axis and the second axis so that the position at which the support portion supports the member to be processed is changed.

Abstract: According to one embodiment, a method of forming patterns is provided, in which the method including forming a resist on an underlying material, pressing a stamper having patterns of protrusions and recesses, sidewalls of which protrusions are tapered, onto the resist to form a patterned resist having patterns of protrusions and recesses, sidewalls of which protrusions are tapered, forming a protective film on the patterned resist, performing anisotropic etching to leave the protective film on the tapered sidewalls of protrusions of the patterned resist, etching a resist residue remaining in recesses of the patterned resist using the protective film as a mask, and etching the underlying material using the protective film and the patterned resist as a mask.

Abstract: A date storage master disk and method of making a data storage master disk. The data storage disk master is for use in a data storage disk replication process. The data storage disk molding processes produces replica disks having a surface relief pattern with replica lands and replica grooves. The method includes providing a master substrate. The master substrate is at least partially covered with a layer of photosensitive material. A surface relief pattern having master lands and master grooves is recorded in the data storage disk master, including the steps of exposing and developing the photosensitive material is controlled to form master grooves extending down to a substrate interface between the master substrate and the layer of photosensitive material, such that the width of the master grooves at the substrate interface corresponds to a desired width of the replica lands.

Abstract: The present invention features a method of patterning a substrate that includes forming, on the substrate, a first layer having a first pattern and selectively shifting in tone, as well as along a first direction, a subsequent pattern formed into the same layer that corresponds to the first pattern. To that end, one method of the present invention includes generating into the first layer, a second pattern having a shape inverse to the first pattern. A third pattern is then transferred into the first layer that has a shape inverse to the second pattern.

Abstract: The present invention relates to ultrafiltration. In particular, the present invention provides nanoporous membranes having pores for generating in vitro and in vivo ultrafiltrate, devices and bioartificial organs utilizing such nanoporous membranes, and related methods (e.g., diagnostic methods, research methods, drug screening). The present invention further provides nanoporous membranes configured to avoid protein fouling with, for example, a polyethylene glycol surface coating.

Abstract: The present invention relates to a process for producing a structure having holes at prescribed positions. The structure is produced through steps of (A) providing an impressing member having protrusions, and a substrate, (B) forming a layer, on the substrate, from a material having a less strength than the impressing member, (C) forming depressions by impressing the impressing member on the layer corresponding to protrusions of the impressing member, (D) etching the layer to bare at least a part of the surface of the substrate, and (E) anodizing the substrate to form holes on the substrate.

Abstract: A technique for manufacturing a micro-electro-mechanical (MEM) structure includes a number of steps. Initially, a substrate is provided. Next, a plurality of trenches are etched into the substrate with a first etch. Then, a charging layer is formed at a bottom of each of the trenches to form undercut trenches. Finally, a second etch is provided into the undercut trenches. The charging layer causes the second etch to laterally etch foots in the substrate between the undercut trenches. The footers undercut the substrate to release a portion of the substrate for providing a movable structure between the undercut trenches and above the footers.

Abstract: An imprinting method is provided that, according to an embodiment, involves contacting an imprintable medium on a substrate with a template to define an imprint area in the medium, removing at least some of any imprintable medium present outside the imprint area, and separating the template from the medium.

Abstract: A stamper includes a substrate and a plurality of protrusions of different heights formed on one of the surfaces of the substrate, the protrusions of larger height having a stack structure formed of at least two layers of at least two types of materials, thereby transferring a plurality of patterns at the same time.

Abstract: A method of fabricating an array substrate for a liquid crystal display device comprises forming a gate line, a data line that crosses the gate line and a thin film transistor connected to the gate line and the data line on a substrate, and forming an organic insulating material layer on the gate line, the data line and the thin film transistor. The organic insulating material layer has photo curability, flexibility and dynamic stability. The method further comprises forming a passivation layer that has a drain contact hole from the organic insulating material layer by using a stamp that has a convex portion. The drain contact hole exposes a drain electrode of the thin film transistor. The method also comprises forming a pixel electrode on the passivation layer. The pixel electrode is connected to the drain electrode through the drain contact hole.

Abstract: In the invention of this application, the resist pattern having a given pattern of opening concavity is formed on the component to be dry etched, the aqueous solution containing a water-soluble resin is filled in that opening concavity, and the filled aqueous solution containing a water-soluble resin is dried into a narrow shrunk resin at the middle of the opening concavity, whereby the mask of shrunk resin is formed. It is thus possible to form a micropattern much finer than determined by optical limits.

Abstract: The disclosure relates to a process including depositing an imprintable layer on a substrate. The imprintable layer is imprinted into the pattern of an imprint-fabricated ribbon. The pattern from the imprintable layer is transferred to the substrate to be used to fabricate the imprint-fabricated ribbon.

Abstract: The present invention provides a method for forming a stepped structure on a substrate that features transferring, into the substrate, an inverse shape of the stepped structure disposed on the substrate.

Abstract: Methods for etching quartz are provided herein. In one embodiment, a method of etching quartz includes providing a film stack on a substrate support disposed in a processing chamber, the film stack having a quartz layer partially exposed through a patterned layer; and etching the quartz layer of the film stack in a multi-step process including a first step of etching the quartz layer utilizing a first process gas comprising at least one fluorocarbon process gas and a chlorine-containing process gas; and a second step of etching the quartz layer utilizing a second process gas comprising at least one fluorocarbon process gas.

Abstract: A method of fabricating a patterned magnetic layer comprises sequential steps of: (a) providing a workpiece comprising a non-magnetic substrate, a layer of magnetic material overlying a surface of the substrate, and a layer of a non-magnetic material overlying the layer of magnetic material; (b) forming a layer of a mask material on the layer of non-magnetic material; (c) forming a topographical pattern comprising a plurality of recesses in the layer of mask material; (d) selectively removing portions of the layer of non-magnetic material proximate lower portions of the recesses, thereby exposing selected portions of the layer of magnetic material; (e) treating the exposed portions of the layer of magnetic material with a liquid for reducing the magnetic properties thereof; and (f) removing the topographically patterned layer of mask material.

Abstract: A stamper and a transfer apparatus that utilizes the stamper, which is capable of accurately transferring its own pattern onto an article, such as a substrate, without being affected by any distribution of convex portions on the stamper surface or any contour of the substrate. The stamper has a fine concave-convex pattern on a surface thereof for forming a fine structure on a substrate using a pressing machine. The stamper is flexible and includes a buffer formed on an opposite side to the side on which the concave-convex pattern is formed. The buffer has a longitudinal distribution of moduli of elasticity.

Abstract: A method is provided for defining a pattern on a workpiece such as a transparent substrate or mask or a workpiece that is at least transparent within a range of optical wavelengths. The method includes defining a photoresist pattern on the top surface of the mask, the pattern including a periodic structure having a periodic spacing between elements of the structure. The method further includes placing the mask on a support pedestal in a plasma reactor chamber and generating a plasma in the chamber to etch the top surface of the mask through openings in the photoresist pattern. The method also includes transmitting light through the pedestal and through the bottom surface of the mask, while viewing through the support pedestal light reflected from the periodic structure and detecting an interference pattern in the reflected light. The method further includes determining from the interference pattern a depth to which periodic structure has been etched in the top surface.

Abstract: A method and apparatus for etching photomasks is provided herein. In one embodiment, the apparatus comprises a process chamber having a support pedestal adapted for receiving a photomask. An ion-neutral shield is disposed above the pedestal and a deflector plate assembly is provided above the ion-neutral shield. The deflector plate assembly defines a gas flow direction for process gases towards the ion-neutral shield, while the ion-neutral shield is used to establish a desired distribution of ion and neutral species in a plasma for etching the photomask.

Abstract: A contact lithography apparatus and a method use one or both of spacers and a mesa to facilitate pattern transfer. The apparatus and the method include one or both of a spacer that provides a spaced apart orientation of lithographic elements, such as a patterning tool and a substrate, when in mutual contact with the spacer and a mesa between the patterning tool and the substrate. The mesa supports a contact surface of one or both of the mold and the substrate. One or both of the spacers and the mesa may be non-uniform. One or more of the patterning tool, the substrate and the spacer is deformable, such that deformation thereof facilitates the pattern transfer.

Abstract: For a surface processing apparatus using a plasma, a mixed gas of a fluorine-containing gas and an oxygen gas is used as an ashing gas. A mixed gas of an oxygen gas and a fluorine-containing gas is introduced as an ashing gas. This allows the following steps to be carried out at the same time: removal of the silicon component left on the mask material surface and the mask material in the area including the cured mask layer and the like; and the removal of the carbon-based, and silicon-based deposits deposited on the inner wall of a vacuum chamber. In addition, the removal of the mask material is performed under low pressure, and in the subsequent step to a step using a mixed gas of a fluorine-containing gas and an oxygen gas, a plasma of only an oxygen gas is used. As a result, it becomes possible to reduce the damages (etching) to the film layer after etching.

Abstract: A method for fabricating high performance vertical and horizontal electrical connections in a three dimensional semiconductor structure. A dielectric film is imprinted with a stamp pattern at high vacuum and with precise temperature and stamping pressure control. The stamp pattern may be formed on a substrate using semiconductor fabrication techniques. After the dielectric film is stamped, residual dielectric film is removed to allow access to an underlying layer. Via and trench regions formed within the dielectric film by stamping are then metalized to provide the high performance interconnections. Multiple layers of interconnections in the three dimensional structure are provided by stacking layers of stamped and metalized dielectric films on top of each other.

Abstract: A magnetic structure, such as a pole tip, and method for forming the same includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.

Abstract: The present invention provides a method to pattern a substrate which features creating a multi-layered structure by forming, on the substrate, a patterned layer having protrusions and recessions. Formed upon the patterned layer is a conformal layer, with the multi-layered structure having a crown surface facing away from the substrate. Portions of the multi-layered structure are removed to expose regions of the substrate in superimposition with the protrusions, while forming a hard mask in areas of the crown surface in superimposition with the recessions.

Abstract: The present invention comprises a method for applying a liquid, such as imprinting material, to a substrate that features use of an electromagnetic field to rapidly spread the liquid over a desired portion of the substrate, while confining the same to the desired region.

Abstract: The invention relates to a method for creating a pattern on a substrate comprising a first alignment structure, using an elastomeric stamp comprising a patterning structure and a second alignment structure. The method comprises a moving step for moving the elastomeric stamp towards the substrate, and a deformation step for deforming the patterning structure with a tensile or compressive force generated by cooperation of the first alignment structure and the second alignment structure.

Abstract: A stamper includes a substrate and a plurality of protrusions of different heights formed on one of the surfaces of the substrate, the protrusions of larger height having a stack structure formed of at least two layers of at least two types of materials, thereby transferring a plurality of patterns at the same time.

Abstract: The present invention provides a method to pattern a substrate which features creating a multi-layered structure by forming, on the substrate, a patterned layer having protrusions and recessions. Formed upon the patterned layer is a conformal layer, with the multi-layered structure having a crown surface facing away from the substrate. Portions of the multi-layered structure are removed to expose regions of the substrate in superimposition with the protrusions, while forming a hard mask in areas of the crown surface in superimposition with the recessions.

Abstract: For PMR (Perpendicular Magnetic Recording) design, one of the major technology problems is the use of CMP to fabricate the pole structure. If the device is under-polished there is a danger of leaving behind a magnetic shorting layer while if it is over-polished there may be damage to the main pole. This problem has been overcome by surrounding the main pole, write gap, stitched write head pillar with a layer of CMP etch stop material which, using optical inspection alone, allows CMP (performed under a first set of conditions) to be terminated just as the stitched write head gets exposed. This is followed by a second CMP step (performed under a second set of conditions) for further fine trimming of the stitched head, as needed.

Abstract: The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen species react with a component of the dielectric material to increase an oxygen content of the dielectric material. The invention also includes a method of forming a capacitor construction. A first capacitor electrode is formed to be supported by a semiconductor substrate. A dielectric material is formed over the first capacitor electrode. A precursor is provided at a location proximate the dielectric material, and a laser beam is focused at such location. The laser beam generates an activated oxygen species from the precursor. The activated oxygen species contacts the dielectric material. Subsequently, a second capacitor electrode is formed over the dielectric material.

Abstract: A liquid application material that is capable of forming an oxidized insulator as a result of baking is applied onto a support substrate to produce an object of processing. Then, a mold having projection structures with intervals of nanometers is pressed against the applied liquid material to produce corresponding recess structures. Thereafter, the applied liquid material is baked in oxygen-containing gas or oxidized in ozone or oxygen plasma to make it electrically highly resistive. Subsequently, a layer to be anodized is formed on said oxidized insulator. Then, the layer to be anodized is actually anodized in an acidic solution to form fine holes that are aligned with the respective recess structures in the anodized layer. Accordingly, fine recess structures can be manufactured with ease.

Abstract: A method is provided for making a multi-fluid cartridge for holding multiple fluids in segregated containment localities. The cartridge body contains fluid supply paths in fluid flow communication with the containment localities. A nozzle plate is attached to a device side of each of a plurality of defined ejection head substrates on a semiconductor wafer. Each of the ejection head substrates has a fluid supply side and two or more fluid flow paths therein for supplying fluid from the supply side to the device side thereof. The fluid flow paths in the ejection head substrates have a flow path density of greater than about 1.0 flow paths per millimeter. The wafer is diced to provide a plurality of micro-fluid ejection device structures. A circuit device is attached to the device side of each of the substrates. An adhesive is stencil printed with a bond line density of at least about 1.2 mm?1 on the micro-fluid ejection device structures or on the cartridge body.

Abstract: A substrate comprising at least a first and a second coating layer on one surface of the substrate is for nanoimprint lithography, the first coating layer has a positive resist and the second coating layer has a negative resist. A process in connection with nanoimprint lithography on the substrate impresses a pattern of nanometer size in a first stage into the second coating layer by a template, following which the first coating layer, in a second stage, is exposed to a chiefly isotropic developing method on surfaces thereof that have been exposed in connection with the first stage, a method for developing and material for the first and second coating layers being selected so that the first coating layer is developed more quickly than the second coating layer, so that an undercut profile is obtained in the coating layers.

Abstract: To provide a manufacturing method for simultaneously forming machined patterns different in dept in a small number of steps and a machined pattern having a U-shaped sectional form in which depths and widths are smoothly changed. Mask patterns 62 respectively having a semicircular sectional form and mask patterns 65 respectively having a V-shaped sectional form are formed at different opening widths 63 and 64 respectively to perform sandblasting by using the mask patterns 62 and 65 as masks. Though a deep groove is formed between the semicircular-sectional-form mask patterns 62, a shallow groove is formed between the V-shaped-sectional-form mask patterns 65.

Abstract: The lithographic process described herein involves aligning a patterned mold with respect to an alignment mark that is disposed on a substrate based upon interaction of a scanning probe with the alignment mark. By this method, the patterned mold may be aligned to an atomic accuracy (e.g., on the order of 10 nm or less), enabling nanometer-scale devices to be fabricated. A device formed by this lithographic method and a system for implementing this lithographic method with alignment also are described.

Abstract: The invention provides a coated metal substrate comprising a metal substrate having an outer surface, a maskant film adhered to at least a portion of the outer surface of the metal substrate, the maskant film having a pattern of scribed lines therein, and a line sealant composition applied to the scribed lines in a maskant film. Both the maskant film and the line sealant composition are preferably radiation cured and substantially solvent-free. The invention also provides a method of protecting a metal substrate from chemical exposure by utilizing the radiation-cured maskant film and line sealant composition.