Masking Of A Substrate Using Material Resistant To An Etchant (i.e., Etch Resist) Patents (Class 216/41)
  • Patent number: 10395941
    Abstract: A self-aligned double patterning (SADP) method is disclosed. The method may include forming a mandrel over an underlying layer, and undercutting the mandrel forming an undercut space under opposing sides of the mandrel. A pair of spacers may be formed adjacent the mandrel, each spacer including a vertical spacer portion on each side of the mandrel and an undercut spacer portion extending into the undercut space from the vertical spacer portion, the undercut spacer portions defining a sub-lithographic lateral dimension therebetween. The mandrels may be removed and, a sub-lithographic feature etched into at least the underlying layer using the spacers.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: August 27, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Ravi P. Srivastava, Hsueh-Chung Chen
  • Patent number: 10395943
    Abstract: To provide a patterning method for forming a desired pattern in a reverse process. A patterning method includes a reverse process. A photocurable composition contains at least a polymerizable compound (A) component and a photopolymerization initiator (B) component. The (A) component has a mole fraction weighted average molecular weight of 200 or more and 1000 or less. The (A) component has an Ohnishi parameter (OP) of 3.80 or more. The Ohnishi parameter (OP) of the (A) component is a mole fraction weighted average of N/(NC?NO), wherein N denotes a total number of atoms in a molecule, NC denotes a number of carbon atoms in the molecule, and NO denotes a number of oxygen atoms in the molecule.
    Type: Grant
    Filed: February 15, 2016
    Date of Patent: August 27, 2019
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshiki Ito, Takeshi Honma, Shiori Yonezawa, Tomonori Otani, Kazumi Iwashita
  • Patent number: 10377848
    Abstract: Polymeric reaction products of certain aromatic alcohols with certain diaryl-substituted aliphatic alcohols are useful as underlayers in semiconductor manufacturing processes.
    Type: Grant
    Filed: April 7, 2016
    Date of Patent: August 13, 2019
    Assignees: Rohm and Haas Electronic Materials LLC, Rohm and Haas Electronic Materials Korea Ltd.
    Inventors: Seon-Hwa Han, Sung Wook Cho, Hae-Kwang Pyun, Jung-June Lee, Shintaro Yamada
  • Patent number: 10369725
    Abstract: The present invention relates to a method for preparing a free-standing polymer film with micropores in a simple and economical way, and particularly to a method for preparing a free-standing polymer film with micropores that includes: (a) forming a thin film of a water-soluble polymer on a substrate; (b) forming a thin film of a hydrophobic polymer on the water-soluble polymer thin film; (c) treating the substrate having the polymer thin films formed on with a mixed solution of a solvent and a C1-C3 alcohol and drying the substrate; and (d) immersing the dried substrate in water to dissolve the water-soluble polymer thin film and thereby to peel the hydrophobic polymer thin film from the substrate.
    Type: Grant
    Filed: December 4, 2015
    Date of Patent: August 6, 2019
    Assignee: The Industry & Academic Cooperation in Chungnam National University (IAC)
    Inventors: Ho-Suk Choi, Van Tien Bui
  • Patent number: 10345287
    Abstract: A method for calibrating multiple nanostructures in parallel for quantitative biosensing using a chip for localized surface plasmon resonance (LSPR) biosensing and imaging. The chip is a glass coverslip compatible for use in a standard microscope with at least one array of functionalized plasmonic nanostructures patterned onto it using electron beam nanolithography. The chip is used to collect CCD-based LSPR imagery data of each individual nanostructure and LSPR spectral data of the array. The spectral data is used to determine the fractional occupancy of the array. The imagery data is modeled as a function of fractional occupancy to determine the fractional occupancy of each individual nanostructure.
    Type: Grant
    Filed: September 27, 2013
    Date of Patent: July 9, 2019
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Marc P. Raphael, Joseph A. Christodoulides, Jeff M. Byers
  • Patent number: 10332652
    Abstract: The conductive film is arranged on the support and contains a binder and a metal portion, in which a position at which the contour line reaches the metal portion included in the thin conductive wire is set as an upper end position, and an average area ratio VA of the metal portion in a region ranging from the upper end position to 100 nm toward the support side is 1% or more and less than 50%, and a position at which the contour line reaches the thin conductive wire does not include the metal portion is set to a lower end position, and an average area ratio VM1 of the metal portion in a region ranging from a middle position between the upper end position and the lower end position to 50 nm toward the support side and to 50 nm toward the surface X side is 50% or more.
    Type: Grant
    Filed: September 4, 2017
    Date of Patent: June 25, 2019
    Assignee: FUJIFILM Corporation
    Inventors: Kensuke Katagiri, Shin Tajiri, Toshinari Fujii
  • Patent number: 10312137
    Abstract: Embodiments of the present disclosure provide an apparatus and methods for forming a hardmask layer that may be utilized to transfer patterns or features to a film stack with accurate profiles and dimension control for manufacturing three dimensional (3D) stacked semiconductor devices. In one embodiment, a method of forming a hardmask layer on a substrate includes forming a seed layer comprising boron on a film stack disposed on a substrate by supplying a seed layer gas mixture in a processing chamber, forming a transition layer comprising born and tungsten on the seed layer by supplying a transition layer gas mixture in the processing chamber, and forming a bulk hardmask layer on the transition layer by supplying a main deposition gas mixture in the processing chamber.
    Type: Grant
    Filed: June 7, 2016
    Date of Patent: June 4, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Eswaranand Venkatasubramanian, Susmit Singha Roy, Pramit Manna, Abhijit Basu Mallick
  • Patent number: 10303048
    Abstract: The present disclosure relates to a patterned structure, the structure comprising: i) a substrate, ii) a first layer on top of the substrate, comprising a filler material and a guiding material, wherein at least a top surface of the first layer comprises one or more zones of filler material and one or more zones of guiding material, and iii) a second layer on top of the first layer comprising a pattern of a first material, the pattern being either aligned or anti-aligned with the underlying one or more zones of guiding material; wherein the first material comprises a metal or a ceramic material and wherein the guiding material and the filler material either both comprise or both do not comprise the metal or ceramic material.
    Type: Grant
    Filed: February 15, 2017
    Date of Patent: May 28, 2019
    Assignees: IMEC VZW, KATHOLIEKE UNIVERSITEIT LEUVEN, KU LEUVEN R&D
    Inventors: Boon Teik Chan, Arjun Singh, Safak Sayan
  • Patent number: 10281817
    Abstract: A method of manufacturing an imprint master template including forming a first layer pattern only in a partial region and a second layer formed in the entire region, and then a back exposure process is performed.
    Type: Grant
    Filed: June 12, 2017
    Date of Patent: May 7, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Taewoo Kim, Eunjung Kim, Seung-Won Park, Daehwan Jang, Hyungbin Cho, Gugrae Jo
  • Patent number: 10209420
    Abstract: Provided are a polarizing plate having high transmittance characteristics and excellent controllability of reflectance characteristics, a method of manufacturing the polarizing plate, and an optical apparatus including the polarizing plate. A polarizing plate having a wire grid structure includes a transparent substrate and grid-shaped protrusions that are arranged on the transparent substrate at a pitch shorter than a wavelength of light in a use band and extend in a predetermined direction, the grid-shaped protrusion includes, in order from the transparent substrate side, a reflection layer, a dielectric layer, and an absorption layer, a width of the reflection layer is smaller than a width of the dielectric layer, and a grid tip formed at a tip of the grid-shaped protrusion has a tapered shape where a side face thereof is inclined in such a direction that a width thereof is decreased toward a tip side when viewed from the predetermined direction.
    Type: Grant
    Filed: December 27, 2017
    Date of Patent: February 19, 2019
    Assignee: Dexerials Corporation
    Inventor: Tomu Takeda
  • Patent number: 10201974
    Abstract: A process for producing a liquid discharge head including a substrate having a liquid supply path passing through from its first surface to second surface and an discharge port forming member having a discharge port communicating with the supply path through a flow path, the process including providing a first layer of photosensitive resin in a region covering an opening of the supply path in the first surface; forming a latent image of a pattern of the flow path in the first layer by exposure; providing a second layer of negative photosensitive resin on the first layer; curing a portion, opposing to the opening of the supply path in the first surface, of the second layer; forming a latent image of a pattern of the discharge port in the second layer by exposure; and developing latent images of patterns of the flow path and discharge port.
    Type: Grant
    Filed: February 16, 2016
    Date of Patent: February 12, 2019
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Jun Yamamuro, Kazuhiro Asai, Keiji Matsumoto, Koji Sasaki, Masahisa Watanabe, Kunihito Uohashi, Seiichiro Yaginuma, Ryotaro Murakami, Kenji Fujii
  • Patent number: 10192733
    Abstract: A method of manufacturing a semiconductor device including attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a fine pattern formed therein; substituting the first liquid attached to the surface of the semiconductor substrate with a solution, the solution comprising a sublimate dissolved in a second liquid; vaporizing the second liquid and precipitating the sublimate to the surface of the semiconductor substrate to forma solid precipitate comprising the sublimate; and removing the precipitate by sublimation. For example, the sublimate may be a material having at least two carboxyl groups bonded to cyclohexane or a material formed of two carboxyl groups bonded to benzene with the bonding sites of the two carboxyl groups being adjacent to one another.
    Type: Grant
    Filed: February 23, 2017
    Date of Patent: January 29, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Junichi Igarashi, Katsuhiro Sato, Masaaki Hirakawa
  • Patent number: 10171919
    Abstract: In one aspect, the present invention provides nano-scale heaters, such as nano-scale thermoacoustic loudspeakers comprising suspended metal nanobridges prepared using atomic layer deposition (ALD). The loudspeakers of the invention are capable of producing audible sound when stimulated with an electrical current or other energetic stimulus. In another aspect, the present invention provides methods of preparing and using such nanodevices.
    Type: Grant
    Filed: May 16, 2017
    Date of Patent: January 1, 2019
    Assignee: The Regents of the University of Colorado, a body corporate
    Inventors: Victor M. Bright, Joseph J. Brown
  • Patent number: 10157752
    Abstract: Methods of patterning a target material layer are provided herein. The method includes steps of positioning a semiconductor wafer having the target material layer thereon in an etch chamber and of providing a flow of etch gases into the etch chamber, the flow of etch gases etchant gas comprising a plurality of gases. The semiconductor wafer has a patterned hardmask feature formed from a compound on the target material layer. The method also includes steps of etching the target material layer using the patterned hardmask feature as a mask feature, wherein one of the gases chemically alters the patterned hardmask feature and at least one of the gases chemically repairs the patterned hardmask feature so that the patterned hardmask feature retains its dimensions during the etching. Associated semiconductor wafer are also provided herein.
    Type: Grant
    Filed: February 8, 2016
    Date of Patent: December 18, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Yuan Ting, Chung-Wen Wu
  • Patent number: 10153240
    Abstract: Methods and apparatus are disclosed which reduce the stress concentration at the redistribution layers (RDLs) of a package device. A package device may comprise a seed layer above a passivation layer, covering an opening of the passivation layer, and covering and in contact with a contact pad. A RDL is formed above the passivation layer, above and in contact with the seed layer, covering the opening of the passivation layer, and electrically connected to the contact pad through the seed layer. The RDL has an end portion with a surface that is smooth without a right angle. The surface of the end portion of the RDL may have an obtuse angle, or a curved surface.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: December 11, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Lin Lu, Hsien-Wei Chen, Kai-Chiang Wu, Hung-Jui Kuo
  • Patent number: 10128337
    Abstract: Methods for forming fin structures with desired profile and dimensions for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips are provided. The methods include a structure reshaping process to reshape a shaped structure, such as a diamond like structure formed on a fin structure. In one embodiment, a method for forming a structure on a substrate includes performing an epitaxial deposition process to form a shaped structure on a fin structure disposed on a substrate, performing a mask layer deposition process to form a mask layer having a first width on the shaped structure, and performing a mask trimming process to trim the mask layer from the first width from a second width.
    Type: Grant
    Filed: June 3, 2016
    Date of Patent: November 13, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Jie Zhou, Zhong Qiang Hua, Chentsau Ying, Srinivas D. Nemani, Ellie Y. Yieh
  • Patent number: 10118155
    Abstract: A method of transferring a single metal atom from a first location to a second location on the surface of a metal oxide is disclosed. The method includes obtaining a material having a first metal atom deposited on a first oxygen atom vacancy of the metal oxide and transferring the first metal atom of the metal on the first oxygen atom vacancy to a second location on the metal oxide by applying a voltage to the first metal atom. The second location can be a second metal atom on a second oxygen atom vacancy of the metal oxide, where the first and second metal atoms form a first metal atom-second metal atom species, or a metal atom of the metal oxide, where the first metal atom and the metal atom of the metal oxide forms a first metal atom-metal atom of the metal oxide species.
    Type: Grant
    Filed: August 11, 2016
    Date of Patent: November 6, 2018
    Assignees: SABIC Global Technologies B.V., UCL Business PLC
    Inventors: Andy Mellor, Chi Yim, Chi Pang, Geoff Thornton, Hicham Idriss
  • Patent number: 10108092
    Abstract: Provided is a photolithography method, including: a) forming a photoresist layer satisfying D=m*(?/2n) (D is a thickness of the photoresist layer, n is a refractive index of the photoresist, ? is a wavelength of irradiated light at the time of exposure, and m is a natural number of 1 or more) on a substrate; and b) manufacturing a photoresist pattern having a ring shape by exposing the photoresist layer and developing the exposed photoresist layer using a photo mask including a transparent substrate and a plate-type metal dot contacting a light emitting surface of the transparent substrate.
    Type: Grant
    Filed: June 9, 2015
    Date of Patent: October 23, 2018
    Assignee: Korea Research Institute of Standards and Science
    Inventor: Eun-Ah You
  • Patent number: 10082660
    Abstract: The invention relates to a transparent object carrier, which has a marking impressed in the interior, to a diagnostic instrument, preferably a microscope, in combination with a transparent object carrier inserted for diagnostic analysis, and to a method, comprising the steps of providing a transparent object carrier, impressing a marking, which is located in the interior of the carrier, supplying the transparent object carrier with a biological or chemical sample, and, optionally, dividing the transparent object carrier and thereby producing a plurality of smaller transparent object carriers that enclose material from the biological or chemical sample.
    Type: Grant
    Filed: October 27, 2014
    Date of Patent: September 25, 2018
    Assignee: EUROIMMUN MEDIZINISCHE LABORDIAGNOSTIKA AG
    Inventors: Winfried Stoecker, Norbert Rottmann, Norbert Koop
  • Patent number: 10040686
    Abstract: A CNT dispersion liquid of the preset invention includes a CNT agglomerate arranged with a mesh body formed from a plurality of CNTs, the CNT agglomerate being dispersed in a dispersion medium is provided wherein a CNT agglomerate is obtained by extracting from the dispersion liquid and drying the CNT agglomerate the obtained CNT agglomerate has a pore size of 0.02 ?m or more and 2.0 ?m or less being maximized a differential pore volume in a pore size range of 0.002 ?m or more and 10.00 ?m or less measured using a mercury intrusion porosimeter.
    Type: Grant
    Filed: May 3, 2013
    Date of Patent: August 7, 2018
    Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Kenji Hata, Kazufumi Kobashi, Don N. Futaba
  • Patent number: 10011490
    Abstract: A CNT dispersion liquid of the preset invention includes a CNT agglomerate arranged with a mesh body formed from a plurality of CNTs, the CNT agglomerate being dispersed in a dispersion medium is provided wherein a CNT agglomerate is obtained by extracting from the dispersion liquid and drying the CNT agglomerate the obtained CNT agglomerate has a pore size of 0.02 ?m or more and 2.0 ?m or less being maximized a differential pore volume in a pore size range of 0.002 ?m or more and 10.00 ?m or less measured using a mercury intrusion porosimeter.
    Type: Grant
    Filed: May 3, 2013
    Date of Patent: July 3, 2018
    Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Kenji Hata, Kazufumi Kobashi, Don N. Futaba
  • Patent number: 9985190
    Abstract: Embodiments are related to systems and methods for fluidic assembly, and more particularly to diodes offering orientation control properties in a fluidic assembly system.
    Type: Grant
    Filed: May 18, 2016
    Date of Patent: May 29, 2018
    Assignee: eLux Inc.
    Inventors: Changqing Zhan, Mark Albert Crowder, Paul John Schuele
  • Patent number: 9899222
    Abstract: A trench structure on a SiC substrate and method for fabricating thereof is provided. The fabricating method includes: providing a SiC substrate; forming a protection layer on the SiC substrate; forming an resisting layer on the protection layer; patterning the resisting layer and the protection layer to form an opening; patterning the SiC substrate by using the patterned resisting layer as a hard mask to form a trench; removing the patterned resisting layer; performing a high-temperature annealing process to form a rounded bottom of the trench; and removing the protection layer.
    Type: Grant
    Filed: December 21, 2015
    Date of Patent: February 20, 2018
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Kuan-Wei Chu, Ming-Jinn Tsai
  • Patent number: 9870915
    Abstract: Embodiments include a method of processing a hardmask that includes forming an alloyed carbon hardmask over an underlying layer. In an embodiment, the alloyed carbon hardmask is alloyed with metallic-carbon fillers. The embodiment further includes patterning the alloyed carbon hardmask and transferring the pattern of the alloyed carbon hardmask into the underlying layer. According to an embodiment, the method may further include removing the metallic component of the metallic-carbon fillers from the alloyed carbon hardmask to form a porous carbon hardmask. Thereafter, the porous hardmask may be removed. In an embodiment, the metallic component of the metallic-carbon fillers may include flowing a processing gas into a chamber that volatizes the metallic component of the metallic-carbon fillers.
    Type: Grant
    Filed: October 1, 2016
    Date of Patent: January 16, 2018
    Assignee: Applied Materials, Inc.
    Inventors: David Knapp, Simon Huang, Jeffrey W. Anthis, Philip Alan Kraus, David Thompson
  • Patent number: 9859281
    Abstract: A technique for forming a semiconductor device is provided. Sacrificial mandrels are formed over a hardmask layer on a semiconductor layer. Spacers are formed on sidewalls of the sacrificial mandrels. The sacrificial mandrels are removed to leave the spacers. A masking process leaves exposed a first set of spacers with a second set protected. In response to the masking process, a first fin etch process forms a first set of fins in the semiconductor layer via first set of spacers. The first set of fins has a vertical sidewall profile. Another masking process leaves exposed the second set of spacers with the first set of spacers and the first set of fins protected. In response to the other masking process, a second fin etch process forms a second set of fins in semiconductor layer using the second set of spacers. The second set of fins has a trapezoidal sidewall profile.
    Type: Grant
    Filed: July 26, 2016
    Date of Patent: January 2, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Chia-Yu Chen, Zuoguang Liu, Miaomiao Wang, Tenko Yamashita
  • Patent number: 9829788
    Abstract: A method is provided for fabricating a photolithographic mask. The method includes providing a transparent substrate; and forming an opaque layer on the transparent substrate. The method also includes writing layout patterns with at least one sub-resolution assistant feature with non-uniform size along a longitudinal direction to increase an adhesion force between the sub-resolution assistant feature with non-uniform size along the longitudinal direction and the transparent substrate in the opaque layer. Further, the method include cleaning residual matters generated by writing the layout patterns in the opaque layer. Further, the method also includes spin-drying the transparent substrate with the layout patterns and the sub-resolution assistant feature with non-uniform size along the longitudinal direction.
    Type: Grant
    Filed: July 16, 2015
    Date of Patent: November 28, 2017
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventors: Boxiu Cai, Yi Huang
  • Patent number: 9810987
    Abstract: A substrate treatment method includes: a polymer separation step of phase-separating a block copolymer into a hydrophilic polymer and a hydrophobic polymer; and a polymer removal step of selectively removing the hydrophilic polymer from the phase-separated block copolymer, wherein in the polymer removal step, the hydrophilic polymer is removed by: irradiating the phase-separated block copolymer with an energy ray; then supplying a first polar organic solvent having a first degree of dissolving the hydrophilic polymer, being lower in boiling point than water and capable of dissolving water, and not dissolving the hydrophobic polymer, to the block copolymer; and then supplying a second polar organic solvent having a second dissolving degree lower than the first dissolving degree, being higher in boiling point than water, and not dissolving the hydrophobic polymer, to the block copolymer.
    Type: Grant
    Filed: June 6, 2014
    Date of Patent: November 7, 2017
    Assignee: Tokyo Electron Limited
    Inventors: Makoto Muramatsu, Takahiro Kitano, Tadatoshi Tomita, Takanori Nishi, Shinichiro Kawakami, Takashi Yamauchi
  • Patent number: 9806254
    Abstract: A storage device includes a first electrode, a second electrode, a storage element, a spacer and a barrier structure. The second electrode is opposite to the first electrode. The storage element is disposed between the first electrode and the second electrode. The spacer is formed on a sidewall of the second electrode, and the spacer has a notch positioned on a top surface of the spacer. The barrier structure is embedded in a lateral of the spacer, and the barrier structure has a top extending upwards past a bottom of the notch. In addition, a method of manufacturing the storage device is disclosed as well.
    Type: Grant
    Filed: June 15, 2015
    Date of Patent: October 31, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Fu-Ting Sung, Chern-Yow Hsu, Shih-Chang Liu
  • Patent number: 9801284
    Abstract: A method of manufacturing a patterned conductor is provided, comprising: providing a substrate, comprising: a base material with an electrically conductive layer disposed thereon; providing an electrically conductive layer etchant; providing a spinning material, comprising: a carrier; and, a photosensitive masking material; providing a developer; forming a plurality of masking fibers and depositing them onto the electrically conductive layer to form a plurality of deposited fibers; patterning the plurality of deposited fibers to provide a treated fiber portion and an untreated fiber portion; developing the plurality of deposited fibers, wherein either the treated fiber portion or the untreated fiber portion is removed, leaving a patterned fiber array; contacting the electrically conductive layer to the electrically conductive layer etchant, wherein the electrically conductive layer that is uncovered by the patterned fiber array is removed, leaving a patterned conductive network on the substrate.
    Type: Grant
    Filed: November 18, 2015
    Date of Patent: October 24, 2017
    Assignee: Dow Global Technologies LLC
    Inventors: Tamara Dikic, Michael A. De Graaf, Christophe Brault, Stefan Prot, C A Torfs-Van Cotthem
  • Patent number: 9786248
    Abstract: A touch display device includes a touch panel, a liquid crystal display module and a pressure sensation layer. One face of the liquid crystal display module is correspondingly attached to a bottom of the touch panel. The liquid crystal display module corresponds to a touch section of the touch panel. The pressure sensation layer is disposed on the other face of the liquid crystal display module. The touch display device can provide both plane touch and pressure sensation touch effects and the operation of the touch display device is diversified and facilitated.
    Type: Grant
    Filed: August 7, 2015
    Date of Patent: October 10, 2017
    Inventor: Chih-Chung Lin
  • Patent number: 9782772
    Abstract: Provided is a method of bonding two surfaces, which includes providing nitrogen or ammonia plasma to a plastic material where a polysiloxane contacted, and a construct manufactured therefrom.
    Type: Grant
    Filed: November 2, 2015
    Date of Patent: October 10, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jeoyoung Shim, Woosung Jeon, Yongkoo Kyoung, Euiseong Moon
  • Patent number: 9761459
    Abstract: Systems and methods for reverse pulsing are described. One of the methods includes receiving a digital signal having a first state and a second state. The method further includes generating a transformer coupled plasma (TCP) radio frequency (RF) pulsed signal having a high state when the digital signal is in the first state and having a low state when the digital signal is in the second state. The method includes providing the TCP RF pulsed signal to one or more coils of a plasma chamber, generating a bias RF pulsed signal having a low state when the digital signal is in the first state and having a high state when the digital signal is in the second state, and providing the bias RF pulsed signal to a chuck of the plasma chamber.
    Type: Grant
    Filed: September 23, 2015
    Date of Patent: September 12, 2017
    Assignee: Lam Research Corporation
    Inventors: Maolin Long, Zhongkui Tan, Ying Wu, Qian Fu, Alex Paterson, John Drewery
  • Patent number: 9755612
    Abstract: A method for manufacturing a resonator in a substrate, including: a) modifying a structure of at least one region of the substrate to make the at least one region more selective; b) etching the at least one region to selectively manufacture the resonator.
    Type: Grant
    Filed: December 20, 2012
    Date of Patent: September 5, 2017
    Assignee: The Swatch Group Research and Development Ltd
    Inventors: Thierry Hessler, Silvio Dalla Piazza
  • Patent number: 9715172
    Abstract: A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (DSA) surrounds the exposed topography. Further to the method, the template is filled with a block copolymer (BCP) to cover the exposed topography, and then the BCP is annealed within the template to drive self-assembly in alignment with the topography. Developing the annealed BCP exposes a DSA pattern immediately overlying the topography.
    Type: Grant
    Filed: May 23, 2016
    Date of Patent: July 25, 2017
    Assignee: Tokyo ELectron Limited
    Inventors: Benjamen M. Rathsack, Mark H. Somervell
  • Patent number: 9704723
    Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.
    Type: Grant
    Filed: November 9, 2015
    Date of Patent: July 11, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching-Mei Hsu, Jiayin Huang, Nitin K. Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur
  • Patent number: 9690018
    Abstract: A method for making a grating includes the following steps. A first photoresist film is formed on a substrate. A second photoresist film is applied on the first photoresist film. A number of first cavities are formed in the second photoresist film, wherein part of the first photoresist film is exposed to form a first exposed part. A number of second cavities are formed, wherein part of the surface of the substrate is exposed to form an exposed surface. A mask layer is deposited on the second photoresist film and the exposed surface of the substrate. A patterned mask layer is formed, and part of the substrate is exposed to form a second exposed part. The second exposed part of the substrate is etched through the patterned mask layer. The patterned mask layer is removed.
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: June 27, 2017
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen
  • Patent number: 9676934
    Abstract: The present invention relates to a composition including: a component (A) being a block copolymer including a block PA bonded to one, or two or more blocks incompatible with the block PA and whose etching selectivity to the block PA is greater than one; and a component (B) being at least one polymer selected from the group consisting of a random copolymer and a homopolymer, wherein the polymer of the component (B) is compatible with at least one block other than the block PA within the blocks constituting the block copolymer of the component (A), and is incompatible with the block PA.
    Type: Grant
    Filed: March 7, 2013
    Date of Patent: June 13, 2017
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Takahiro Senzaki, Ken Miyagi, Kenichiro Miyashita
  • Patent number: 9663671
    Abstract: Provide is a curable composition for imprints, capable of effectively suppressing chipping of the cured pattern. A curable composition for imprints comprising (A) curable compound and (B) photo-polymerization initiator, having a moisture content ratio, relative to the total weight of all components excluding solvent, of less than 0.8% by weight.
    Type: Grant
    Filed: April 17, 2014
    Date of Patent: May 30, 2017
    Assignee: FUJIFILM Corporation
    Inventors: Yuichiro Enomoto, Kunihiko Kodama, Shinji Tarutani
  • Patent number: 9659790
    Abstract: A method of forming a pattern, the method including forming a mask layer on a feature layer on a substrate; forming guides regularly arranged with a first pitch on the mask layer in a first region and dummy guides regularly arranged with the first pitch on the mask layer in a second region spaced apart from the first region with a separation region therebetween, the separation region having a width greater than the first pitch; forming a block copolymer layer on the mask layer; phase-separating the block copolymer layer to form a self-assembled layer; forming a mask pattern by etching the mask layer using the self-assembled layer; and patterning the feature layer by transferring a shape of the mask pattern to the feature layer in the first region while blocking the shape of the mask pattern from being transferred to the feature layer in the second region.
    Type: Grant
    Filed: May 11, 2016
    Date of Patent: May 23, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Seok-han Park
  • Patent number: 9658597
    Abstract: A timepiece mechanism including a pair of components with a first component including a material taken from a first group including solid monocrystalline, natural diamond, micro- or nano-crystalline CVD diamond, solid monocrystalline diamond, and amorphous carbon “DLC”, and having a first friction surface arranged to cooperate with a second friction surface included in a second opposing component and the second component includes, at least in its second friction surface, a material with a high concentration of boron, greater than 10 atomic percent, and, in a particular embodiment, this second opposing component includes at least one ceramic containing boron. Method for manufacturing such a mechanism. Method for transforming such a mechanism.
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: May 23, 2017
    Assignee: Nivarox-FAR S.A.
    Inventors: Philippe Dubois, Christian Charbon, Cedric Faure, Rudy Charlery
  • Patent number: 9655745
    Abstract: A method of producing an interbody spinal implant. The method includes the steps of obtaining a blank having a top surface, bottom surface, opposing lateral sides, and opposing anterior and posterior portions, and applying a subtractive process (e.g., masked acid etching) to the top surface, the bottom surface, or both surfaces of the blank to form a roughened surface topography. Subsequently, the blank is machined to form the interbody spinal implant, which includes a body having a top surface, a bottom surface, opposing lateral sides, opposing anterior and posterior portions, a substantially hollow center, and a single vertical aperture where the top surface, the bottom surface, or both surfaces of the interbody spinal implant have the roughened surface topography produced by the subtractive process. This simplified method produces more accurate and repeatable implants with fewer process steps and defects, reducing process time and costs.
    Type: Grant
    Filed: November 6, 2015
    Date of Patent: May 23, 2017
    Assignee: Titan Spine, LLC
    Inventors: Chad J. Patterson, Mark E. Berg, Peter F. Ullrich, Jr.
  • Patent number: 9632408
    Abstract: Graphoepitaxy directed self-assembly methods generally include grafting a conformal layer of a polymer brush onto a topographic substrate. A planarization material, which functions as a sacrificial material is coated onto the topographic substrate. The planarization material is etched back to a top surface of the topographic substrate, wherein the etch back removes the polymer brush from the top surfaces of the topographic substrate. The remaining portion of the polymer brush is protected by the remaining planarization material below the top surface of the topographic substrate, which can be removed with a solvent to provide the topographic substrate with a conformal polymer brush below the top surface of the topographic substrate. The substrate is then coated with a block copolymer and annealed to direct self-assembly of the block copolymer. The methods mitigate island and/or hole defect formation.
    Type: Grant
    Filed: October 12, 2016
    Date of Patent: April 25, 2017
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, TOKYO ELECTRON LIMITED
    Inventors: Hongyun Cottle, Cheng Chi, Chi-Chun Liu, Kristin Schmidt
  • Patent number: 9625752
    Abstract: Responsive, biocompatible substrates are of interest for directing the maturation and function of cells in vitro during cell culture. This can potentially provide cells and tissues with desirable properties for regenerative therapies. The present disclosure provides a scalable approach to attach, align and dynamically load cells on responsive liquid crystal elastomer (LCE) substrates. Monodomain LCEs exhibit reversible shape changes in response to cyclic stimulus, and when immersed in an aqueous medium on top of, for example, resistive heaters, shape changes are fast, reversible and produce minimal temperature changes in the surroundings.
    Type: Grant
    Filed: July 14, 2014
    Date of Patent: April 18, 2017
    Assignee: WILLIAM MARSH RICE UNIVERSITY
    Inventors: Rafael Verduzco, Jeffrey G. Jacot, Oluwatomiyin Adetiba, Aditya Agrawal
  • Patent number: 9620353
    Abstract: A method of manufacturing a semiconductor device including attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a fine pattern formed therein; substituting the first liquid attached to the surface of the semiconductor substrate with a solution, the solution comprising a sublimate dissolved in a second liquid; vaporizing the second liquid and precipitating the sublimate to the surface of the semiconductor substrate to form a solid precipitate comprising the sublimate; and removing the precipitate by sublimation. For example, the sublimate may be a material having at least two carboxyl groups bonded to cyclohexane or a material formed of two carboxyl groups bonded to benzene with the bonding sites of the two carboxyl groups being adjacent to one another.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: April 11, 2017
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Junichi Igarashi, Katsuhiro Sato, Masaaki Hirakawa
  • Patent number: 9601640
    Abstract: A process is provided for contacting a nanostructured surface. In that process, a substrate is provided having a nanostructured material on a surface, the substrate being conductive and the nanostructured material being coated with an insulating material. A portion of the nanostructured material is at least partially removed. A conductor is deposited on the substrate in such a way that it is in electrical contact with the substrate through the area where the nanostructured material has been at least partially removed.
    Type: Grant
    Filed: August 25, 2014
    Date of Patent: March 21, 2017
    Assignee: Advanced Silicon Group, Inc.
    Inventors: Marcie R. Black, Joanne Forziati, Michael Jura, Jeff Miller, Brian Murphy, Adam Standley
  • Patent number: 9601344
    Abstract: The present disclosure provides a method including providing a semiconductor substrate and forming a first layer and a second layer on the semiconductor substrate. The first layer is patterned to provide a first element, a second element, and a space interposing the first and second elements. Spacer elements are then formed on the sidewalls on the first and second elements of the first layer. Subsequently, the second layer is etched using the spacer elements and the first and second elements as a masking element.
    Type: Grant
    Filed: February 20, 2015
    Date of Patent: March 21, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Ying Lee, Chih-Yuan Ting, Jyu-Horng Shieh, Ming-Hsing Tsai, Syun-Ming Jang
  • Patent number: 9589343
    Abstract: The purpose of the present invention is to provide a pattern measurement device which evaluates quantitatively and with high precision random patterns such as finger print patterns. In order to fulfill this purpose, a pattern measurement device which measures the pattern on a sample on the basis of an image acquired by a charged particle beam is proposed which selectively extracts linear or linearly approximable parts of the pattern on the sample, and outputs at least one of the following: the measurement of the distance between the extracted parts, the ratio of said extracted parts in a prescribed region, and the length of said extracted parts. Further, as a more specific embodiment, a pattern measurement device is proposed which calculates a frequency depending on a distance value between extracted parts, and outputs, as a pattern distance, distance values for which said frequency fulfills a prescribed condition.
    Type: Grant
    Filed: August 2, 2013
    Date of Patent: March 7, 2017
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Miki Isawa, Kei Sakai, Norio Hasegawa
  • Patent number: 9576814
    Abstract: A method of forming a target pattern includes forming a plurality of lines over a substrate with a first mask and forming a first spacer layer over the substrate, over the plurality of lines, and onto sidewalls of the plurality of lines. The plurality of lines is removed, thereby providing a patterned first spacer layer over the substrate. The method further includes forming a second spacer layer over the substrate, over the patterned first spacer layer, and onto sidewalls of the patterned first spacer layer, and forming a patterned material layer over the second spacer layer with a second mask. Whereby, the patterned material layer and the second spacer layer collectively define a plurality of trenches.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: February 21, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chieh-Han Wu, Cheng-Hsiung Tsai, Chung-Ju Lee, Ming-Feng Shieh, Ru-Gun Liu, Shau-Lin Shue, Tien-I Bao
  • Patent number: 9458531
    Abstract: A guiding pattern for directed self-assembly (DSA) of a block copolymer (BCP) is an array of spaced guiding stripes on a substrate that have a width equal to nL0 and a pitch equal to (n+k)L0, where n and k are integers equal to or greater than 1 and L0 is the natural pitch of the BCP. The guiding stripes have oxidized sidewalls. A silicon-containing BCP self-assembles with the BCP component without silicon wetting the oxidized sidewalls. Then oxygen reactive ion etching (RIE) removes the BCP component without silicon and oxidizes the silicon-containing BCP component. The remaining pattern of silicon oxide containing BCP component can then be used as an etch mask to etch the underlying substrate.
    Type: Grant
    Filed: November 4, 2014
    Date of Patent: October 4, 2016
    Assignee: HGST Netherlands B.V.
    Inventors: Julia Cushen, Ricardo Ruiz, Lei Wan
  • Patent number: 9434927
    Abstract: A method for manufacturing a cell culture substrate obtained by forming a coating layer of a polymer on the surface of a substrate, wherein the polymer is formed by polymerizing a monomer component containing a nitrogen atom-containing monomer represented by formula (I): wherein R1 is hydrogen atom or methyl group, R2 is an alkylene group having 1 to 6 carbon atoms, each of R3 and R4 is independently an alkyl group having 1 to 4 carbon atoms, R5 is an alkylene group having 1 to 4 carbon atoms, and Y is oxygen atom or —NH— group, includes irradiating the polymer with ion beam at a predetermined position of the coating layer of the polymer, to remove the coating layer of the polymer irradiated with the ion beam.
    Type: Grant
    Filed: August 30, 2011
    Date of Patent: September 6, 2016
    Assignee: OSAKA ORGANIC CHEMICAL INDUSTRY LTD.
    Inventors: Hiromi Kitano, Yoshiyuki Saruwatari, Kazuyoshi Matsuoka