Abstract: A semiconductor device includes a fin structure protruding from an isolation insulating layer disposed over a substrate and having a channel region, a source/drain region disposed over the substrate, a gate dielectric layer disposed on the channel region, and a gate electrode layer disposed on the gate dielectric layer. The gate electrode includes a lower portion below a level of a top of the channel region and above an upper surface of the isolation insulating layer, and a width of the lower portion is not constant.

Abstract: A method is provided for modifying a via from a PCB including a plurality of subassemblies comprising a plurality of layers. The method may include drilling a via of the PCB to form a through-hole to remove an unwanted material in the via of the PCB. The method may also include depositing a carbon-based material over an inner wall of the through-hole. The method may further include back drilling a first portion of the through-hole by a drill from the top of the PCB to form a first blind via. The method may also include selectively plating a conductive material over the carbon-based material to form a plated through-hole.

Abstract: A method for forming a device includes forming a hole pattern in a resist layer disposed over a substrate. The substrate includes contact regions disposed over a major surface of the substrate and a dielectric layer disposed over the contact regions. The resist layer is disposed over the dielectric layer and the hole pattern includes through openings in the resist layer that are aligned with the contact regions. The through openings include a first through opening having a first critical dimension and a second through opening having a second critical dimension greater than the first critical dimension. The method includes modifying the hole pattern by depositing a material including silicon within the through openings by exposing the hole pattern to a first plasma generated from a gas mixture including SiCl4 and hydrogen, and then etching holes in the dielectric layer through the modified hole pattern, exposing the contact regions.

Abstract: A method for manufacturing an optical device includes: preparing a semiconductor substrate that includes a portion corresponding to a base, a movable unit, and an elastic support portion; forming a first resist layer in a region corresponding to the base on a surface of a first semiconductor layer which is opposite to an insulating layer; forming a depression in the first semiconductor layer by etching the first semiconductor layer using the first resist layer as a mask; forming a second resist layer in a region corresponding to a rib portion on a bottom surface of the depression, a side surface of the depression, and the surface of the first semiconductor layer which is opposite to the insulating layer; and forming the rib portion by etching the first semiconductor layer until reaching the insulating layer using the second resist layer as a mask.

Abstract: A method of forming a semiconductor structure includes forming an etch stop layer on a substrate, forming a metal oxide layer over the etch stop layer, and forming an interlayer dielectric (ILD) layer on the metal oxide layer. The method further includes forming a trench etch opening over the ILD layer, forming a capping layer over the trench etch opening, and forming a via etch opening over the capping layer.

Abstract: A wire grid polarizer (WGP) can include a flexible substrate. The flexible substrate might be desirable for WGP flexibility or to aid in further processing of the WGP. Wires of the WGP can include flexible ribs to minimize or avoid defects such as cracks in the WGP. An etch stop layer in the wires can allow formation of the flexible ribs without delamination of a reflective portion of the wires. The WGP embodiments herein can have improved flexibility, stretchability, compressibility, or combinations thereof with reduced cracking, collapse, and delamination of wires or ribs.

Abstract: A memory cell includes a bottom electrode, a first dielectric layer, a variable resistance layer, and a top electrode. The first dielectric layer laterally surrounds the bottom electrode. A top surface of the bottom electrode is located at a level height lower than that of a top surface of the first dielectric layer. The variable resistance layer is disposed on the bottom electrode and the first dielectric layer. The variable resistance layer contacts the top surface of the bottom electrode and the top surface of the first dielectric layer. The top electrode is disposed on the variable resistance layer.

Abstract: A method of forming a metallic pattern on a substrate is provided. The method includes applying onto a metallic surface, a chemically surface-activating solution having an activating agent that chemically activates the metallic surface; non-impact printing an etch-resist ink on the activated surface to produce an etch resist mask according to a predetermined pattern, wherein at least one ink component within the etch-resist ink undergoes a chemical reaction with the activated metallic surface to immobilize droplets of the etch-resist ink when hitting the activated surface; performing an etching process to remove unmasked metallic portions that are not covered with the etch resist mask; and removing the etch-resist mask.

Abstract: A system to electrohydrodynamically pattern a material includes a first electrode having a first voltage, a second electrode having a second voltage that is different from the first voltage, one or more materials to be patterned residing between the first electrode and the second electrode, a gap between at least one surface of at least one of the materials to be patterned and one of the first or second electrodes, at least one patterning material in the gap, wherein the patterning material is a material other than air, and at least one filling material filling any remainder of the gap.

Abstract: A method of generating power with a power generation system. Solid state generators generate a plurality of outputs. The outputs of the solid state generator modules are combined from a plurality of channels, in a combiner, using a phase optimization technique to generate an in phase combined output power.

Abstract: A biosensor apparatus is provided. The biosensor apparatus includes a base substrate; a first fluid channel layer on the base substrate and having a first fluid channel passing therethrough; a foundation layer on a side of the first fluid channel layer away from the base substrate, a foundation layer throughhole extending through the foundation layer to connect to the first fluid channel; and a micropore layer on a side of the foundation layer away from the base substrate, a micropore extending through the micropore layer to connect to the first fluid channel through the foundation layer throughhole. The micropore layer extends into the foundation layer throughhole and at least partially covers an inner wall of the foundation layer throughhole.

Abstract: A display apparatus is disclosed, which may endure deformation by an external force. The display apparatus includes a flexible substrate (110) including a plurality of pores (115); and a pixel array layer (PL) provided on a first surface of the flexible substrate (110), wherein the plurality of pores are (115) provided to be concave from a second surface opposite to the first surface of the flexible substrate (110).

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a container configured to contain a substrate, and a pipe configured to supply the container with liquid to treat the substrate. The apparatus further includes an ejector including a first passage where the liquid introduced from the pipe and the liquid introduced from the container are joined and pass through, and a first opening configured to eject the liquid that has passed through the first passage. Furthermore, the first passage has an area where a sectional area of the first passage becomes large as advancing downstream in the liquid.

Abstract: A method is presented for reducing element segregation of a phase change material (PCM). The method includes forming a bottom electrode, constructing a layered stack over the bottom electrode, the layered stack including the PCM separated by one or more electrically conductive and chemically stable materials, and forming a top electrode over the layered stack. The PCM is Ge—Sb—Te (germanium-antimony-tellurium or GST) and the one or more electrically conductive and chemically stable materials are titanium nitride (TiN) segments.

Abstract: The disclosure describes techniques to adjust the geometry of a pendulous proof mass VBA to operate with sufficient signal-to-noise performance while avoiding nonlinear mechanical coupling at specified frequencies. The techniques of this disclosure include adding anchor support flexures to a resonator connection structure, adjusting shape, thickness, and the material of VBA components and of the VBA support structure to both control the frequency of any mechanical resonant modes and to adjust the mechanical mode frequencies away from desired operating frequencies and, in some examples, away from harmonics of desired operating frequencies.

Abstract: Embodiments of the present disclosure generally relate to techniques for deposition of high-density films for patterning applications. In one embodiment, a method of processing a substrate is provided. The method includes depositing a carbon hardmask over a film stack formed on a substrate, wherein the substrate is positioned on an electrostatic chuck disposed in a process chamber, implanting ions into the carbon hardmask, wherein depositing the carbon hardmask and implanting ions into the carbon hardmask are performed in the same process chamber, and repeating depositing the carbon hardmask and implanting ions into the carbon hardmask in a cyclic fashion until a pre-determined thickness of the carbon hardmask is reached.

Abstract: A refractory metal core (RMC) finishing method according to an exemplary aspect of the present disclosure includes, among other things, performing a plurality of finishing operations on a plurality of RMC samples, analyzing one or more properties of at least a portion of the plurality of RMC samples and selecting a combination of finishing operations for generating an RMC having desirable properties for manufacturing a part free from defects.

Abstract: Methods for forming a film stack comprising a hardmask layer and etching such hardmask layer to form features in the film stack are provided. The methods described herein facilitate profile and dimension control of features through a proper profile management scheme formed in the film stack. In one or more embodiments, a method for etching a hardmask layer includes forming a hardmask layer on a substrate, where the hardmask layer contains a metal-containing material containing a metal element having an atomic number greater than 28, supplying an etching gas mixture to the substrate, and etching the hardmask layer exposed by a photoresist layer.

Abstract: A method of fabricating a blazed diffraction grating comprises providing a master template substrate and imprinting periodically repeating lines on the master template substrate in a plurality of master template regions. The periodically repeating lines in different ones of the master template regions extend in different directions. The method additionally comprises using at least one of the master template regions as a master template to imprint at least one blazed diffraction grating pattern on a grating substrate.

Abstract: The present disclosure generally relates to nanostructure manufacturing. A method for fabricating an imprint template includes providing a first substrate including a first electrode layer on a first base layer and a plurality of first convex portions on a surface of the first electrode layer; providing a second substrate including a second electrode layer on a second base layer, a second resist layer on the second electrode layer, and a plurality of second convex portions on a surface of the second resist layer farthest from the second base layer, supplying electrical signals to the first electrode layer and the second electrode layer to produce an electric field between the plurality of first convex portions and the plurality of second convex portions; and forming the imprint template on the second substrate.

Abstract: A supporting layer, a display device and a manufacture method of the display device are provided by the present application. The display device includes: a flexible screen device and a supporting layer. The flexible screen device is located on a side of the supporting layer, and the supporting layer is provided with at least one hollowed-out area for releasing an impact force when the flexible screen device is subjected to the impact force. In embodiments of the present application, by attaching a supporting layer with a plurality of hollowed-out areas to a flexible screen device, an impact force can be dispersed and buffered when the flexible screen device is impacted by a heavy object, damage to display components due to stress concentration can be avoided, thereby avoiding malfunction or failure of the flexible screen device.

Abstract: A touch panel of improved appearance and function includes a substrate, first bridges, insulating strings, first electrodes, and second electrode strings. Each insulating string extends along a first direction and covers the first bridges. The insulating strings are spaced apart from each other in a second direction intersecting with the first direction. Adjacent first electrodes in the second direction are electrically connected to one first bridge to form a first electrode string. Each second electrode string is on one of the insulating strings. Each first electrode string and the adjacent second electrode string are insulated from each other by a difference in height along one insulating string. A method for making the touch panel and a touch display device using the touch panel are also disclosed.

Abstract: A quartz crystal resonator that includes an AT-cut quartz crystal blank including a first main surface and a second main surface that face each other and each of which has long sides extending in an X-axis direction of the quartz crystal blank and short sides extending in a Z?-axis direction of the quartz crystal blank, and a first side surface and a second side surface that are located adjacent to the long sides of the first main surface and the second main surface; a first excitation electrode and a second excitation electrode; and an extension electrode that extends from the first main surface to the second main surface along the first side surface and that is electrically connected to the first excitation electrode. Each the first and second side surfaces have a first m-plane face and a second m-plane face.

Abstract: The present application relates to a block copolymer and a use thereof. The present application can provide a laminate which is capable of forming a highly aligned block copolymer on a substrate and thus can be effectively applied to production of various patterned substrates, and a method for producing a patterned substrate using the same.

Abstract: A method of forming a metallic pattern on a substrate is provided. The method includes applying onto a metallic surface, a chemically surface-activating solution having an activating agent that chemically activates the metallic surface; non-impact printing an etch-resist ink on the activated surface to produce an etch resist mask according to a predetermined pattern, wherein at least one ink component within the etch-resist ink undergoes a chemical reaction with the activated metallic surface to immobilize droplets of the etch-resist ink when hitting the activated surface; performing an etching process to remove unmasked metallic portions that are not covered with the etch resist mask; and removing the etch-resist mask.

Abstract: According to an embodiment, a wafer (W) includes a layer (EL) to be etched, an organic film (OL), an antireflection film (AL), and a mask (MK1), and a method (MT) according to an embodiment includes a step of performing an etching process on the antireflection film (AL) by using the mask (MK1) with plasma generated in a processing container (12), in the processing container (12) of a plasma processing apparatus (10) in which the wafer (W) is accommodated, and the step includes steps ST3a to ST4 of conformally forming a protective film (SX) on the surface of the mask (MK1), and steps ST6a to ST7 of etching the antireflection film (AL) by removing the antireflection film (AL) for each atomic layer by using the mask (MK1) on which the protective film (SX) is formed.

Abstract: A method for processing a substrate includes a step of providing a substrate and a first step. In the step of providing a substrate, a substrate having a first film and a second film formed on the first film and having a pattern formed thereon is provided. In the first step, a protective film is formed on a side wall of the first film by a product generated by sputtering of the second film while a first processing gas is turned into plasma and the first film is etched simultaneously with the sputtering of the second film.

Abstract: Touchscreen, comprising: a display device and a touch sensor adhered to the display device via optically clear adhesive; wherein the touch sensor comprises: a transparent substrate; a layer of catalytic photoresist patterns of a catalytic photoresist composition, the catalytic photoresist composition including a photoresist and catalytic nanoparticles; a metal conductive layer with conductive patterns over the layer of catalytic photoresist patterns; a metal passivation layer over the metal layer; and a transparent protective layer having on a cross-linked structure over the metal passivation layer.

Abstract: An example method includes: forming a bottom electrode on a substrate and forming a patterned mask layer on the bottom electrode; thermal oxidizing the bottom electrode layer via the patterned mask layer by applying a thermal process and a first plasma; removing a gaseous status of the bottom electrode oxide using a first vacuum purge; removing a solid status of the bottom electrode oxide by applying a second plasma; removing the gaseous status and the solid status of the bottom electrode oxide using a second vacuum purge to form a patterned bottom electrode; removing the patterned mask layer; forming a filament forming layer on the patterned bottom electrode; and a top electrode on the filament forming layer. The filament forming layer is configured to form a filament within the filament forming layer responsive to a switching voltage being applied to the filament forming layer.

Abstract: A device for supporting a sheet of glass, in a contact band between the edge and up to 200 mm from the edge of the glass, includes first and second supports that each include a chassis and a support system for supporting the glass connected to the chassis, the support system of each support including a surface for supporting the glass including a fibrous material able to contact the glass in the contact band at a temperature between 400 and 600° C., the two supports being movable in a transfer vertical relative movement enabling the support surface of one to pass over or under the support surface of the other in order to transfer the glass from one support to the other, the support system of the first support including a passage to allow to pass an arm connected to the second support during the transfer vertical relative movement.

Abstract: A process for manufacturing an electronic component having attaches includes providing a first component having a first attach, forming trenches on a portion of the first attach with a laser to form a solder stop, and providing a second component comprising a second attach. The process further includes providing solder between the first attach and the second attach to form a connection between the first component and the second component, where the trenches contain the solder to a usable area. A device produced by the process is disclosed as well.

Abstract: A method for etching silicon at cryogenic temperatures is provided. The method includes forming an inert layer from condensation of a noble gas at cryogenic temperatures on exposed surfaces such as the sidewalls of a feature to passivate the sidewalls prior to the etching process. The method further includes flowing a fluorine-containing precursor gas into the chamber to form a fluorine-containing layer on the inert layer. The method further includes exposing the fluorine-containing layer and the inert layer to an energy source to form a passivation layer on the exposed portions of the substrate and exposing the substrate to ions to etch the substrate.

Abstract: A method of manufacturing a replica template includes preparing a substrate including a first protruding portion protruding from a first surface of the substrate and having a patterning surface thereon, forming a first mask pattern over the patterning surface, the first mask pattern comprising a convex portion having a smaller width than the patterning surface and a pattern disposed on the convex portion, removing a portion of the first protruding portion using the first mask pattern as a mask to produce a second protruding portion on the first protruding portion, and forming a pattern in the patterning surface on the second protruding portion by transferring the shape of the pattern of the first mask pattern into the patterning surface on the second protruding portion.

Abstract: In a first aspect, the present disclosure relates to a method for removing an organic sacrificial material from a 2D material, comprising: providing a target substrate having thereon the 2D material and a layer of the organic sacrificial material over the 2D material, infiltrating the organic sacrificial material with a metal or ceramic material, and removing the organic sacrificial material.

Abstract: A method for opening an amorphous carbon layer mask below a hardmask is provided. The opening an amorphous carbon layer mask comprises performing one or more cycles, where each cycle comprises an amorphous carbon layer mask opening phase and a cleaning phase. The amorphous carbon layer mask opening phase comprises flowing an opening gas into a plasma processing chamber, wherein the opening gas comprises an oxygen containing component, creating a plasma from the opening gas, which etches features in the amorphous carbon layer mask, and stopping the flow of the opening gas. The cleaning phase comprises flowing a cleaning gas into the plasma processing chamber, wherein the cleaning gas comprises a hydrogen containing component, a carbon containing component, and a halogen containing component, creating a plasma from the cleaning gas; and stopping the flow of the cleaning gas into the plasma processing chamber.

Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.

Abstract: Provided are a block copolymer pattern formation method that enables formation, over a large area, of a block copolymer pattern with a perpendicularly oriented lamellar structure enabling nanoscale surface shape control, and a diffraction limited optical element produced using the block copolymer pattern formation method. The block copolymer pattern formation method is a method for forming a block copolymer pattern on a substrate and includes forming an oblique angle vapor deposited film on the substrate, applying a block copolymer onto the oblique angle vapor deposited film that has been formed, and subjecting the block copolymer that has been applied to perpendicularly oriented lamellar structure development post-treatment to form a pattern with a perpendicularly oriented lamellar structure.

Abstract: Disclosed herein is a spinal implant with a solid frame and a porous inner layer. The implant may have a cavity defined by the porous inner layer. The solid frame may have one or more ribs extending from a medial wall to a lateral wall. The thickness of the porous layer may vary relative the thickness of the solid frame at various locations. An inserter to place a spinal implant and a method to perform same are also disclosed.

Abstract: A method of forming a semiconductor arrangement includes forming a gate dielectric layer over a semiconductor layer. A gate electrode layer is formed over the gate dielectric layer. A first gate mask is formed over the gate electrode layer. The gate electrode layer is etched using the first gate mask as an etch template to form a first gate electrode. A first dopant is implanted into the semiconductor layer using the first gate mask and the first gate electrode as an implantation template to form a first doped region in the semiconductor layer.

Abstract: A manufacturing method of a touch panel includes following steps. The first sensing electrodes and the second sensing electrodes are formed on a substrate first. Connecting bridges are formed next, wherein adjacent two first sensing electrodes are connected by at least one connecting bridge, and a manufacturing method of the connecting bridges includes following steps. A metal layer is formed on the substrate first, wherein a material of the metal layer includes silver. A photoresist layer is formed on a surface of the metal layer next, wherein a material of the photoresist layer includes sulfur. A photolithography process and an etching process are respectively performed on the photoresist layer and the metal layer to form the connecting bridges, wherein silver in the metal layer and sulfur in the photoresist layer react with each other to form a silver sulfide layer after the photoresist layer is formed.

Abstract: A method of forming a metallic pattern on a substrate is provided. The method includes applying onto a metallic surface, a chemically surface- activating solution having an activating agent that chemically activates the metallic surface; non-impact printing an etch-resist ink on the activated surface to produce an etch resist mask according to a predetermined pattern, wherein at least one ink component within the etch-resist ink undergoes a chemical reaction with the activated metallic surface to immobilize droplets of the etch-resist ink when hitting the activated surface; performing an etching process to remove unmasked metallic portions that are not covered with the etch resist mask; and removing the etch resist mask.

Abstract: The physical and chemical properties of surfaces can be controlled by bonding nanoparticles, microspheres, or nanotextures to the surface via inorganic precursors. Surfaces can acquire a variety of desirable properties such as antireflection or reflection, antifogging, antifrosting, UV blocking, and IR absorption, while maintaining transparency to visible light. Micro or nanomaterials can also be used as etching masks to texture a surface and control its physical and chemical properties via its micro or nanotexture.

Abstract: A method of fabricating a semiconductor device includes forming a semiconductor fin comprising a channel region for a fin field effect transistor (finFET). A gate oxide layer is then formed on the channel. The gate oxide layer is treated with a nitrogen containing agent so as to form a nitrogenous layer and an interfacial layer. The nitrogenous layer is then removed. A high-k dielectric layer is formed on the interfacial layer. A metal gate is formed on the high-k dielectric layer. The nitrogenous layer is removed by rinsing the semiconductor fin with deionized water. The gate oxide and interfacial layer contains the same material.

Abstract: The present disclosure relates to a generalized method for producing a vertically oriented block copolymer film, a block copolymer film with controlled orientation obtained thereby, and a method for producing a self-assembled pattern. According to the present disclosure, it is possible to form a crosslinked layer, which is mechanically stable and undergoes no chemical change, by subjecting the block copolymer surface to plasma treatment using a filter. It is also possible to obtain a vertically oriented block copolymer film by annealing the block copolymer film having such a crosslinked layer. The method for producing a vertically oriented block copolymer film according to the present disclosure is advantageous in that it can be applied for general purpose regardless of the chemical structure, type and morphology of a block copolymer, and the method can be applied generally to the conventional directed self assembly process.

Abstract: The present disclosure generally relates to methods of micro-imprinting panels or substrates for advanced packaging applications. A redistribution layer comprising an epoxy material is deposited on a substrate layer and imprinted with a stamp to form an epoxy substrate patterned with a plurality of vias. The stamp is removed from the epoxy substrate, and the epoxy substrate is optionally etched with a plasma comprising oxygen to prevent the redistribution layer from becoming flowable when cured. A capping layer may optionally be deposited on the surface of the epoxy substrate.

Abstract: A method of processing a target object is provided. The target object has an etching target layer, an organic film on the etching target layer and a mask on the organic film. The organic film includes a first layer and a second layer, the mask is provided on the first layer, the first layer is provided on the second layer, and the second layer is provided on the etching target layer. The method includes generating plasma of a first gas within a processing vessel of a plasma processing apparatus in which the target object is accommodated; etching the first layer with the plasma of the first gas and the mask until the second layer is exposed; and conformally forming a protection film on a side surface of the first layer; and generating plasma of a second gas and removing the mask with the plasma of the second gas.

Abstract: An apparatus and method for assisting a vehicle into a desired position within a parking space. The device uses non-uniform light strength light line or other pattern projection to generate highlighted projections onto a target at a vehicle dashboard. The user may form a strong projection by focusing multi laser projections to overlap each other at the target. The driver knows the location of the vehicle by memorizing the patterns along the projections relative to the locations in the parking space. The driver maneuvers the vehicle direction and speed in order to make the projections onto the target, to avoid hitting the garage door frame, and to park on a desired position inside the parking space. The devices can be used for both guiding the vehicle into the parking space at a predetermined path to avoid nearby objects and stopping the vehicle at the desired place and direction.

Abstract: Disclosed is a substrate treating method comprising: a supply step of supplying a process liquid including a drying auxiliary substance in a melted state to a pattern formation surface of a substrate; a solidification step of solidifying the process liquid on the pattern formation surface so as to from a solidified body; and a removal step of removing the solidified body from the pattern formation surface, wherein a substance which satisfies at least one of the following conditions, namely a melting entropy under atmospheric pressure at a melting point of 1 mJ/cm3·K or more but 500 mJ/cm3·K or less and a sublimation entropy under atmospheric pressure at 0° C. of 1 mJ/cm3·K or more but 2000 mJ/cm3·K or less, is used as the drying auxiliary substance.

Abstract: A method MT according to an embodiment provides a technique capable of controlling a pattern shape during processing of an organic film and the like. A wafer W as an object to which the method MT in the embodiment is applied includes an etching target layer EL, an organic film OL, and a mask ALM, the organic film OL is constituted by a first region VL1 and a second region VL2, the mask ALM is provided on the first region VL1, the first region VL1 is provided on the second region VL2, and the second region VL2 is provided on the etching target layer EL. In the method MT, the first region VL1 is etched to reach the second region VL2 by generating a plasma of a gas containing nitrogen gas in the processing container 12 in which the wafer W is accommodated, a mask OLM1 is formed from the first region VL1, a protective film SX is conformally formed on a side surface SF of the mask OLM1, the second region VL2 is etched to reach the etching target layer EL to form a mask OLM2 from the second region VL2.

Abstract: A water leakage detection system for a laser device detects a water leakage in the laser device including: a part group for outputting laser light; a water cooling plate which cools at least a portion of the part group; an enclosed housing in which the part group and the water cooling plate are stored; and an air circulating unit which circulates air within the housing, the air circulating unit is provided in the vicinity of a part having high heat generation and the water leakage detection system for the laser device includes: a humidity detection unit which detects humidity within the housing; temperature detection units which are arranged in a plurality of places in the water cooling plate and which respectively detect the temperatures of the places; and a detection control unit which outputs detection information when the humidity acquired from the humidity detection unit exceeds reference humidity or when at least one of the temperatures acquired from the temperature detection units exceeds a reference t