Abstract: A method and system provides a near-field transducer (NFT) for an energy assisted magnetic recording (EAMR) transducer. The method and system include forming a sacrificial NFT structure having a shape a location corresponding to the NFT. A dielectric layer is deposited. A portion of the dielectric layer resides on the sacrificial NFT structure. At least this portion of the dielectric layer on the sacrificial structure is removed. The sacrificial NFT structure is removed, exposing an NFT trench in the dielectric layer. At least one conductive layer for the NFT is deposited. A first portion of the conductive layer(s) reside in the NFT trench. A second portion of the conductive layer(s) external to the NFT trench is removed to form the NFT.

Abstract: The present invention provides a plasma processing device and a plasma processing method that can easily adjust plasma density distribution while making the plasma density uniform, and a method of manufacturing an element including a substrate to be processed. In an embodiment of the present invention, the inside of a vacuum vessel (1) is divided by a grid (4) having communication holes into a plasma generation chamber (2) and a plasma processing chamber (5). On the upper wall (26) of the plasma generation chamber (2), magnetic coils (12) are arranged such that magnetic field lines within the vacuum vessel (1) point from the center of the vacuum vessel (1) to a side wall (27), and, outside the side wall (27) of the plasma generation chamber (2), ring-shaped permanent magnets (13) are arranged such that a polarity pointing to the inside of the vacuum vessel (1) is a north pole and a polarity pointing to the outside of the vacuum vessel (1) is a south pole.

Abstract: A method for enhancing thermal stability, improving biasing and reducing damage from electrical surges in self-pinned abutted junction heads. The method includes forming a free layer, forming first hard bias layers abutting the free layer and forming second hard bias layers over the first hard bias layers discontiguous from the free layer, the second hard bias layers being anti-parallel to the first hard bias layers, the first and second hard bias layers providing a net longitudinal bias on the free layer.

Abstract: A method for providing a perpendicular magnetic recording transducer is described. The method and system include providing a metallic underlayer and providing an insulator, at least a portion of which is on the metallic underlayer. The method and system also include forming a trench in the insulator. The bottom of the trench is narrower than the top of the trench and includes a portion of the metallic underlayer. The method and system also include providing a nonmagnetic seed layer that substantially covers at least the bottom and sides of the trench. The method and system also include plating a perpendicular magnetic pole material on at least a portion of the seed layer and removing a portion of the perpendicular magnetic pole material. A remaining portion of the perpendicular magnetic pole material forms a perpendicular magnetic recording pole.

Abstract: A sample stage for processing a sample in an ion beam etching apparatus has positioning arrangements each having a receiving apparatus and a mask, a sample being mountable in the receiving apparatus with reference to an ion beam and positionable relative to the mask. The sample stage includes a mechanism that enables a switchover between respective positioning arrangements so a selected positioning arrangement is respectively orientable toward the ion beam. The sample in the selected positioning arrangement is exposed to the ion beam while the remaining positioning arrangements face away from the ion beam. The positioning arrangements are arranged in one common vessel. A method for sequential preparation of at least two samples in an ion beam etching unit using the sample stage is also disclosed.

Abstract: A method for processing at least one wall of an opening formed in a silicon substrate, successively including the steps of implanting fluorine atoms into an upper portion of the wall of the opening, performing an oxidization step, and applying a specific processing to at least a portion of the non-implanted portion of the opening.

Abstract: A method and apparatus for providing a uniform UV radiation irradiance profile across a surface of a substrate is provided. In one embodiment, a substrate processing tool includes a processing chamber defining a processing region, a substrate support for supporting a substrate within the processing region, an ultraviolet (UV) radiation source spaced apart from the substrate support and configured to transmit ultraviolet radiation toward the substrate positioned on the substrate support, and a light transmissive window positioned between the UV radiation source and the substrate support, the light transmissive window having an optical film layer coated thereon. In one example, the optical film layer has a non-uniform thickness profile in a radial direction, wherein a thickness of the optical film layer at the peripheral area of the light transmissive window is relatively thicker than at the center region of the optical film layer.

Abstract: A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.

Abstract: Provided is a method of manufacturing a see-through-type integrated solar cell and a method of manufacturing the same. The method comprises forming a first conductive material being apart and strip patterned on a transparent substrate so that the first conductive material comprises a predetermined space for enabling light to directly pass through the transparent substrate, forming a solar cell (semiconductor) layer, obliquely depositing a second conductive material and etching the solar cell layer using the second conductive material layer as a mask.

Abstract: A method for manufacturing a nanoscale cage of a material suitable for forming a molecular layer, including a step of shaping and packaging an object in the general shape of a revolving cylinder, the shaping and packaging step being adapted according to the position of the value of the diameter of the revolving cylinder relative to a threshold below which a folding of the ends of the cylinder is promoted.

Abstract: A scalable MEMS inductor is formed on the top surface of a semiconductor die. The MEMS inductor includes a plurality of magnetic lower laminations, a circular trace that lies over and spaced apart from the magnetic lower laminations, and a plurality of upper laminations that lie over and spaced apart from the circular trace.

Abstract: A structure with an integrated circuit (IC) and a silicon condenser microphone mounted thereon includes a substrate having a first area and a second area. The IC is fabricated on the first area in order to form a conducting layer and an insulation layer. Both the conducting layer and the insulation layer further extend to the second area. The insulation layer is removed under low temperature in order to expose the conducting layer on which the silicon condenser microphone is fabricated. The silicon condenser microphone includes a first film layer, a connecting layer and a second film layer under a condition that the connecting layer connects the first and the second film layers. The first film layer and the second film layer act as two electrodes of a variable capacitance.

Abstract: High quantum yield InP nanocrystals are used in the bio-technology, bio-medical, and photovoltaic, specifically IV, III-V and III-VI nanocrystal technological applications. InP nanocrystals typically require post-generation HF treatment. Combining microwave methodologies with the presence of a fluorinated ionic liquid allows Fluorine ion etching without the hazards accompanying HF. Growing the InP nanocrystals in the presence of the ionic liquid allows in-situ etching to be achieved. The optimization of the PL QY is achieved by balancing growth and etching rates in the reaction.

Abstract: A method and system for manufacturing a pole on a recording head is disclosed. The method and system include sputtering at least one ferromagnetic layer and fabricating a hard mask on the ferromagnetic layer. The method and system also include defining the pole and depositing a write gap on the pole. A portion of the pole is encapsulated in an insulator.

Abstract: According to one embodiment, a method of manufacturing a patterned medium includes forming an implantation depth-adjusting layer above a magnetic recording layer, the magnetic recording layer being made of a material that is deactivated when implanted with a chemical species, and the implantation depth-adjusting layer being made of a material that is etched when irradiated with an ion beam of the chemical species and irradiating the implantation depth-adjusting layer with the ion beam to implant the chemical species into a part of the magnetic recording layer through the implantation depth-adjusting layer while etching the implantation depth-adjusting layer by an action of the ion beam to decrease a thickness of the implantation depth-adjusting layer.

Abstract: Provided is a process for manufacturing a diamond like carbon layer. The process for manufacturing the diamond like carbon layer includes, without limitation, forming a layer of diamond like carbon over a substrate, and reactive ion etching the layer of diamond like carbon.

Abstract: A method of treating a workpiece is described. The method comprises computing correction data from metrology data related to a workpiece surface profile, adjusting the surface profile in accordance with the correction data using a gas cluster ion beam (GCIB), and further adjusting the surface profile by performing an etching process following the GCIB adjustment.

Abstract: A method of manufacturing a magnetic head, including a magneto resistance effect (MR) element that reads a magnetic recording medium, is disclosed. A multilayer film is formed on a shield layer. Unnecessary portions of the multilayer film are removed from both sides of the MR element in a first direction orthogonal to a lamination direction of the multilayer film and parallel to the MR element surface facing the magnetic recording medium. An insulating layer is formed on a surface exposed by removal of the unnecessary portions. An integrated soft magnetic layer covering both sides of the MR element in the first direction and an upper side of the MR element is formed, thereby configuring a second shield layer. An anisotropy application layer is formed on the second shield layer, thereby providing exchange anisotropy to the soft magnetic layer, and magnetizing the soft magnetic layer in a predetermined direction.

Abstract: A method, including depositing a layer of material onto a base portion of a wafer, is disclosed. The layer of material has a first surface adjacent the base portion. The method also includes depositing a pattern of masking material onto a portion of a second surface of the layer. Material from the layer of material that is unprotected by the pattern of masking material is removed from the layer of material. By removing such material a portion of the layer of material is suspended from the base portion.

Abstract: A first instrument (230) is used to image a first semiconductor article having a trench (110) of defined cross-section, while a second instrument (220) is used to simultaneously prepare a second semiconductor article with a trench of defined cross-section. Furthermore, a method is disclosed to prepare a trench (110) of defined cross-section in a semiconductor article by rough milling and subsequent fine milling.

Abstract: A method provides a pole of magnetic recording transducer. A nonmagnetic stop layer having a thickness and a top surface is provided. A depression that forms a bevel is provided in the stop layer. The bevel has a depth less than the thickness and a bevel angle with respect to a remaining portion of the top surface. The bevel angle is greater than zero and less than ninety degrees. An intermediate layer having a substantially flat top surface is provided over the stop layer. A trench is formed in the intermediate layer via a removal process. The trench has a profile corresponding to the pole. The stop layer is a stop for the removal process. The method also includes providing the pole in the trench. The pole has a leading edge bevel corresponding to the bevel in the stop layer.

Abstract: A method for manufacturing a magnetic write head having a write pole with a very narrow track width, straight well defined sides and a well defined trailing edge width (e.g. track-width). The method includes uses two separate chemical mechanical polishing processes that stop at separate CMP stop layers. The first CMP stop layer is deposited directly over a RIEable fill layer. A RIE mask, is formed over the fill layer and first CMP stop layer, the RIE mask having an opening. A trench then is formed in the RIEable fill layer. A second CMP stop layer is then deposited into the trench and over the RIE mask, followed by plating of a magnetic material. First and second chemical mechanical polishing processes are then performed, the first stopping at the first CMP stop and the second stopping at the second CMP stop.

Abstract: A mold for producing microlenses or a microlens array is produced by sequentially carrying out an etching step of forming quadrangular pyramid concave parts on a single crystal silicon substrate by anisotropic etching and an ion etching step of forming molding concave parts with spherical or cylindrical surface parts from the quadrangular pyramid concave parts.

Abstract: High quantum yield InP nanocrystals are used in the bio-technology, bio-medical, and photovoltaic, specifically IV, III-V and III-VI nanocrystal technological applications. InP nanocrystals typically require post-generation HF treatment. Combining microwave methodologies with the presence of a fluorinated ionic liquid allows Fluorine ion etching without the hazards accompanying HF. Growing the InP nanocrystals in the presence of the ionic liquid allows in-situ etching to be achieved. The optimization of the PL QY is achieved by balancing growth and etching rates in the reaction.

Abstract: A method of manufacturing a perpendicular magnetic recording head capable of easily and accurately forming a main magnetic-pole layer having a shape suitable for concentrating a magnetic flux is provided. A nonmagnetic layer having a recessed section (a first recessed section and a second recessed section) is formed, and then an additional nonmagnetic layer is formed on an inner surface of the recessed section. Then, a magnetic layer is formed in the recessed section formed with the additional nonmagnetic layer, and then the magnetic layer is cut to form an air bearing surface, so as to form the main magnetic-pole layer.

Abstract: The embodiments disclose a method of stack patterning, including loading a stack into a stationary stack stage, rotating one or more ion beam grid assemblies substantially concentrically aligned with the stationary stack stage to etch the stack and controlling the operation of the one or more ion beam grid assemblies to achieve substantial axial uniformity of the etched stack.

Abstract: A method for securing a micro-object to a substrate by redeposition. The method includes ion-beam milling the substrate in proximity of the micro-object such that the material milled away from the substrate sprays onto the micro-object and covers its base, effectively attaching it to the substrate. Since no carrier gases are used, the ion beam chamber and its contents are not exposed to undesirable contaminants.

Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.

Abstract: A method for fabricating an air-bearing surface (ABS) in a substrate having a surface is described. The substrate is for a magnetic recording head. The method includes providing a mask on the surface of substrate. The mask has an edge adjacent to a portion of the substrate exposed by the mask. The method also includes forming a taper in the portion of the substrate adjacent to the edge. The taper has an angle from the surface of the substrate of at least thirty degrees and not more than seventy degrees. The method also includes performing a reactive ion etching (RIE) to remove the portion of the substrate to form a cavity in the substrate. The angle of the taper is configured to substantially eliminated redeposition from the RIE on the edge.

Abstract: The invention can provide apparatus and methods of processing a substrate in real-time using a Quasi-Neutral Beam (Q-NB) curing system to improve the etch resistance of photoresist layer. In addition, the improved photoresist layer can be used to more accurately control gate and/or spacer critical dimensions (CDs), to control gate and/or spacer CD uniformity, and to eliminate line edge roughness (LER) and line width roughness (LWR).

Abstract: A method and system for providing a magnetic transducer is described. The method and system define a magnetoresistive sensor in a track width direction, provide hard bias material(s) adjacent to the sensor in the track width direction, and provide sacrificial capping layer(s) on a portion of the hard bias material(s). The sacrificial capping layer(s) have a first height in a stripe height direction. The method and system also provide a mask for defining a stripe height of the sensor. The mask covers at least part of the sensor and has a second height in the stripe height direction. The second height is less than the first height. The method and system define the stripe height of the sensor while the mask covers the sensor. The sacrificial capping layer(s) are configured to prevent removal of the portion of the hard bias material(s) while the stripe height is defined.

Abstract: A method of fabricating a tunneling magnetoresistance (TMR) reader is disclosed. A TMR structure comprising at least one ferromagnetic layer and at least one nonmagnetic insulating layer is provided. A first thermal annealing process on the TMR structure is performed. A reader pattern definition process performed on the TMR structure to obtain a patterned TMR reader. A second thermal annealing process is performed on the patterned TMR reader.

Abstract: A method for fabricating a magnetic transducer is described. The magnetic transducer includes a pole having a pole tip and a flared region. The method Includes providing a first mask layer on the pole and providing a second mask layer on the first mask layer. The first mask layer is soluble in a predetermined solution and has a first thickness. The second mask layer has a second thickness greater than the first thickness. The method also includes forming a mask from the first mask layer and the second mask layer. The step of forming the mask layer includes using the predetermined solution. The mask has a pattern that exposes a portion of the pole tip and covers a portion of the flared region. The method also includes providing a wrap-around shield on at least the pole tip.

Abstract: An oscillator spring material comprising a mixture of a host material with an additive in proportions which permit the thermal evolution of the material's elastic modulus to be tuned, e.g. to correct or compensate for other thermal changes in an oscillator system. The additive comprises a crystalline material having an abnormal thermal evolution of elastic modulus. The host material has a normal thermal evolution of elastic modulus. The additive is mixed with the host material before the host material undergoes a phase transformation into its final form. The additive has a phase transformation temperature higher than the host material, so that additive remains in the same state while the host material phase transformation takes place.

Abstract: The method provides a magnetoresistive device. The magnetoresistive device is formed from a plurality of magnetoresistive layers. The method includes providing a mask. The mask covers a first portion of the magnetoresistive element layers in at least one device area. The magnetoresistive element(s) are defined using the mask. The method includes depositing hard bias layer(s). The method also includes providing a hard bias capping structure on the hard bias layer(s). The hard bias capping structure includes a first protective layer and a planarization stop layer. The first protective layer resides between the planarization stop layer and the hard bias layer(s). The method also includes performing a planarization. The planarization stop layer is configured for the planarization.

Abstract: A method of treating a workpiece is described. The method comprises selectively forming a sacrificial material on one or more regions of a substrate or a layer on the substrate using a gas cluster ion beam (GCIB), and adjusting a surface profile of a surface on the substrate or the layer on the substrate by performing an etching process following the selective formation.

Abstract: Wire grid polarizers, methods of fabricating a wire grid polarizer and display panels including a wire grid polarizer are provided, the methods include preparing a mold having a lower surface in which a plurality of parallel fine grooves are formed, and arranging the mold on a transparent substrate. The plurality of parallel fine grooves are filled with a conductive liquid ink. A plurality of parallel conductive nano wires are formed on the transparent substrate by curing the conductive liquid ink. The mold is removed.

Abstract: A method for forming a contact hole of a semiconductor device according to the present invention forms a contact hole which is defined as a new contact hole region (a second contact hole region), between spacers as well as a contact hole defined within the spacer (a first contact hole region) by a spacer patterning technology (SPT). The present invention with this method can help to form a fine contact hole as a double patterning is used, even with one mask.

Abstract: A scanning probe where the micromachined pyramid tip is extended by the growth of an epitaxial nanowire from the top portion of the tip is disclosed. A metallic particle, such as gold, may terminate the nanowire to realize an apertureless near-field optical microscope probe.

Abstract: A method for modeling devices in a wafer comprises the step of providing the wafer comprising a first plurality of devices having a track width and a first stripe height, a second plurality of devices having the track width and a second stripe height, and a third plurality of devices having the track width and a third stripe height. The method further comprises the steps of measuring resistance values for the first, second and third plurality of devices to obtain a data set correlating a stripe height and a resistance value for each of the first, second and third plurality of devices, and estimating a linear relationship between resistance and inverse stripe height for the first, second and third plurality of devices based on the data set.

Abstract: Multi-layer ground plane structures and methods of manufacture for integrated lead suspension flexures. A flexure in accordance with one embodiment of the invention includes an insulating layer, a plurality of traces on the insulating layer and a stainless steel base layer on the side of the insulating layer opposite the traces. The stainless steel base layer includes one or more void portions with voids in the base layer opposite the insulating layer from the traces and one or more backed portions with the base layer backing the traces. A plurality of patterned and transversely-spaced first conductive ground planes are located opposite the insulating layer from the traces at the void portions and backed portions of the stainless steel base layer. A continuous gold second conductive ground plane is located opposite the insulating layer and the first ground planes from the side of the insulating layer adjacent to the traces at the void portions and backed portions of the stainless steel base layer.

Abstract: A method for manufacturing a magnetoresistive sensor that results in the sensor having a very flat top magnetic shield. The process involves depositing a plurality of sensor layers and then depositing a thin high density carbon CMP stop layer over the sensor layers and forming a mask over the CMP stop layer. An ion milling is performed to define the sensor. Then a thin insulating layer and magnetic hard bias layer are deposited. A chemical mechanical polishing is performed to remove the mask and a reactive ion etching is performed to remove the remaining carbon CMP stop layer. Because the CMP stop layer is very dense and hard, it can be made very thin. This means that when it is removed by reactive ion etching, there is very little notching over the sensor, thereby allowing the upper shield to be very thin.

Abstract: A method and system of location specific processing on a substrate is described. The method comprises establishing a gas cluster ion beam (GCIB) according to a set of beam properties and measuring metrology data for a substrate. Thereafter, the method comprises determining at least one spatial gradient of the metrology data at one or more locations on the substrate and adjusting at least one beam property in the set of beam properties for the GCIB according to the determined at least one spatial gradient. Using the metrology data and the adjusted set of beam properties, correction data for the substrate is computed. Following the computing, the adjusted GCIB is applied to the substrate according to the correction data.

Abstract: A method and system of location specific processing on a substrate is described. The method comprises acquiring metrology data for a substrate, and computing correction data for adjusting a first region of the metrology data on the substrate. Thereafter, a first gas cluster ion beam (GCIB) for treating the high gradient regions is established, and the first GCIB is applied to the substrate according to the correction data. The method further comprises optionally acquiring second metrology data following the applying of the first GCIB, and computing second correction data for adjusting a second region of the metrology data, or the second metrology data, or both on the substrate. Thereafter, a second gas cluster ion beam (GCIB) for treating the second region is established, and the second GCIB is applied to the substrate according to the second correction data.

Abstract: The present subject matter relates to a micromechanical component having a top face and a bottom face and at least two side faces, and a coating of diamond and/or diamond-like carbon (DLC) which encompasses all the surfaces of the component, wherein on at least one side face, across at least a part of said side face, the coating has a smaller coating thickness than that of the top face and/or bottom face, so that a reinforced area in reference to the at least one side face is produced.

Abstract: A magnetic head includes: a pole layer including a track width defining portion and a wide portion; and an accommodation layer disposed on a bottom forming layer and having a groove that accommodates the pole layer. The groove includes a first portion for accommodating at least part of the track width defining portion, and a second portion for accommodating at least part of the wide portion. A manufacturing method for the magnetic head includes the steps of: forming a groove defining layer on a nonmagnetic layer that is intended to later become the accommodation layer; forming a mask that covers an area of the nonmagnetic layer where to form the first portion of the groove; etching the nonmagnetic layer so that the second portion of the groove is formed in the nonmagnetic layer; removing the mask; and taper-etching the nonmagnetic layer so that the first portion of the groove is formed in the nonmagnetic layer and the groove is thereby completed.

Abstract: The invention provides an etching method for realizing trench etching without causing any damages to the side walls of the trench while maintaining a high-etching rate. The plasma etching method relates to forming a groove or a hole by forming a silicon trench to a silicon substrate or a silicon substrate having a silicon oxide dielectric layer via a mixed gas plasma containing a mixed gas of SF6 and O2 or a mixed gas of SF6, O2 and SiF4 and having added thereto a gas containing hydrogen within the range of 5 to 16% (percent concentration) of the total gas flow rate of the mixed gas.

Abstract: According to one embodiment, a pattern forming methoo is disclosed. A film is formed on a substrate to be processed. A gaps is formed in a surface of the film. A photo-curable imprinting agent is supplied on the film surface in which the gaps are formed. The agent is contacted with a template including a concave pattern. The contacting is configured to fill the concave pattern with the agent. Light is applied to the agent while the agent is contacted with the template, wherein the agent is cured by the light. The template is separated from the substrate, wherein a pattern of the cured agent is formed on the substrate.

Abstract: A method and apparatus for providing a write head having well-defined, precise write head pole tips. A coplanar write head pole tip processing method provides a thin-film magnetic write head pole tip layer and defines first and second pole tips from the pole tip layer. When the pole tips are provided on a write head, a write gap can be defined using ion milling, E-beam lithography, FAB or can be deposited. The write head pole tips can be used in conjunction with read heads by merging a read head with a write head or a read head can be bonded to a write head in a piggybacked fashion.

Abstract: Silicon, silicon dielectrics and low-k dielectrics are etched in a focused ion beam process using gaseous fluorinating etchants selected from the group of triethylamine trihydrofluoride (TEATHF) and xenon fluoride. Xenon fluoride is combined with a secondary protecting agent to avoid undesired corrosion of bare silicon. The protecting agent may be an oxidizing agent such as oxygen, perfluorotripentylamine (PFTPA), or a heavy completely fluorinated hydrocarbon.