Abstract: Embodiments of a photomask removal apparatus for removing photoresist off of a photomask are provided herein. In some embodiments, a nozzle head for removing photoresist off of a photomask includes: a nozzle portion having a first side and an opposing second side and a flow path extending from the first side to the second side, wherein the flow path includes an orifice disposed between the first side and the second side and a nozzle that extends from the orifice to a nozzle exit on the second side, and wherein the flow path in the nozzle increases in width at an angle from the orifice to the second side; and a vacuum portion coupled to the nozzle portion, wherein the vacuum portion includes a first side and an opposing second side that faces the nozzle exit, wherein the vacuum portion includes a vacuum port extending from the second side.

Abstract: A method is used to prepare the remainder of a donor substrate, from which a layer has been removed by delamination in a plane weakened by ion implantation. The remainder comprises, on a main face, an annular step corresponding to a non-removed part of the donor substrate. The method comprises the deposition of a smoothing oxide on the main face of the remainder in order to fill the inner space defined by the annular step and to cover at least part of the annular step, as well as heat treatment for densification of the smoothing oxide. A substrate is produced by the method, and the substrate may be used in subsequent processes.

Abstract: A recovery route returns, to a retaining tank, mixed solution supplied to a substrate processing unit. A discarding route discards the supplied mixed solution to a place other than the retaining tank. A switching controller causes the supplied mixed solution to flow into the discarding route during a time interval until a first time interval has elapsed from a time point when the substrate processing unit starts to supply the mixed solution; causes the supplied mixed solution to flow into the recovery route during a time interval until a second time interval, which is decided based on a predetermined recovery rate, has elapsed after the first time interval elapses; and causes the supplied mixed solution to flow into the discarding route during a time interval until supply of the mixed solution has been ended from a time point when the second time interval elapses.

Abstract: A method of micro-texturing a surface is disclosed. The method includes printing an etchant onto a substrate surface and forming a micro-texture on the substrate surface by removing material from the substrate surface.

Abstract: The present disclosure provides a semiconductor structure etching solution, including an etchant, an ionic strength enhancer having an ionic strength greater than 10?3 M in the semiconductor structure etching solution, and a solvent having a dielectric constant lower than a dielectric constant of water.

Abstract: A method for surface-finishing one or more metal liners is provided, the method comprising chemical milling to remove wrinkled textures generated during the plastic deformation of the metal liners.

Abstract: A gas dispenser in a process module for wet processing of wafer-shaped articles is substantially smaller than the article to be processed and is movable laterally of the article as it dispenses inert gas above the article.

Abstract: Provided are an apparatus and method for treating a substrate. Specifically, provided are an apparatus and method for treating a substrate through a supercritical process. The apparatus includes: a housing providing a space for performing a process; a support member disposed in the housing to support a substrate; a supply port configured to supply a process fluid to the housing; a shield member disposed between the supply port and the support member to prevent the process fluid from being directly injected to the substrate; and an exhaust port configured to discharge the process fluid from the housing.

Abstract: Disclosed is a method of purifying a solution containing hydrofluoric acid, nitric acid and at least one silicon impurity by treating the solution with at least one reverse osmosis membrane. According to the method of the present invention, silicon impurities contained in the solution containing hydrofluoric acid and nitric acid can be selectively removed or reduced. This method can be advantageously used in the photovoltaic industry or in the battery component industry.

Abstract: There is provided an etching liquid including nitric acid; a fluorine-containing compound; and a nitrogen-containing organic compound A containing a nitrogen atom, or a phosphorus-containing compound B.

Abstract: The disclosure relates to a method of operating a gas field ion beam system in which the gas field ion beam system comprises an external housing, an internal housing, arranged within the external housing, an electrically conductive tip arranged within the internal housing, a gas supply for supplying one or more gases to the internal housing, the gas supply having a tube terminating within the internal housing, and an extractor electrode having a hole to permit ions generated in the neighborhood of the tip to pass through the hole into the external housing. The method comprises the step of regularly heating the external housing, the internal housing, the electrically conductive tip, the tube and the extractor electrode to a temperature of above 100° C.

Abstract: The method includes holding a substrate horizontally with a holding and rotating mechanism; introducing processing liquid from a fluid introduction portion of, in a processing liquid pipe in which a processing liquid nozzle having a discharge port at a tip end is provided at one end, the other end of the processing liquid pipe into the processing liquid pipe so as to discharge the processing liquid from the discharge port toward the substrate; introducing, after stopping the processing liquid discharge step, a gas from the fluid introduction portion into the processing liquid pipe so as to extrude the processing liquid within the processing liquid pipe and within the processing liquid nozzle outwardly; and stopping, after starting the introduction of the gas, the introduction of the gas into the processing liquid pipe with the processing liquid being left within the processing liquid pipe and/or the processing liquid nozzle.

Abstract: Some embodiments described herein include a system that collects and learns reference side-channel normal activity, process it to reveal key features, compares subsequent collected data and processed data for anomalous behavior, and reports such behavior to a management center where this information is displayed and predefine actions can be executed when anomalous behavior is observed. In some instances, a physical side channel (e.g. and indirect measure of program execution such as power consumption or electromagnetic emissions and other physical signals) can be used to assess the execution status in a processor or digital circuit using an external monitor and detect, with extreme accuracy, when an unauthorized execution has managed to disrupt the normal operation of a target system (e.g., a computer system, etc.).

Abstract: Scan step (S3) for moving a nozzle with etching liquid discharged therefrom is carried out such that etching liquid application position toward the rotating substrate moves from the edge portion toward the center portion of the principal face of the substrate. Thereafter, center discharging step (S4) for continuing the supply of the etching liquid toward the principal face of the substrate under the condition that the application position is positioned at the center portion of the principal face of the substrate W is conducted. Moving velocity of the liquid application position in the scan step (S3) is determined in accordance with supply condition of the etching liquid toward the substrate under the condition that the liquid application position is positioned at the center portion of the principal face of the substrate.

Abstract: Vapor is provided locally at a sample surface to allow fluorescence of the fluorescent markers in a vacuum chamber. For example, a nanocapillary can dispense a liquid near a region of interest, the liquid evaporating to increase the vapor pressure near the fluorescent markers. The increase in vapor pressure at the fluorescent marker is preferably sufficiently great to prevent deactivation or to reactivate the fluorescent marker, while the overall pressure in the vacuum chamber is preferably sufficiently low to permit charged particle beam operation with little or no additional evacuation pumping.

Abstract: The present invention provides an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, and a method of using it for etching a multilayer thin film containing a copper layer and a titanium layer, that is, an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, which comprises (A) hydrogen peroxide, (B) nitric acid, (C) a fluoride ion source, (D) an azole, (E) a quaternary ammonium hydroxide and (F) a hydrogen peroxide stabilizer and has a pH of from 1.5 to 2.5, and a etching method of using it.

Abstract: A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off a liquid remaining on the substrate, and a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate.

Abstract: A method for cleaning a dielectric and metal structure within a microelectronic structure uses an oxygen containing plasma treatment, followed by an alcohol treatment, in turn followed by an aqueous organic acid treatment. Another method for cleaning a dielectric and metal structure within a microelectronic structure uses an aqueous surfactant treatment followed by an alcohol treatment and finally followed by an aqueous organic acid treatment. The former method may be used to clean a plasma etch residue from a dual damascene aperture. The second method may be used to clean a chemical mechanical polish planarizing residue from a dual damascene structure. The two methods may be used sequentially, absent any intervening or subsequent sputtering method, to provide a dual damascene structure within a microelectronic structure.

Abstract: A chemical engraving machine to engrave a plate of stainless steel moved along an horizontal direction, said machine comprising a base, an acid liquid circuit adapted to chemically attack said plate of stainless steel at locations where it is not protected by a protection mask, a lower guiding device, an upper guiding device, the lower and upper guiding devices being configured to maintain said plate of stainless steel substantially vertically, and a nozzle support bearing a plurality of spraying nozzles projecting horizontally the acid liquid toward the plate of stainless steel. A method chemically engraves a plate of stainless steel in a vertical position.

Abstract: A method and apparatus for dispensing a liquid etchant onto a wafer dispenses the liquid etchant onto a wafer using a scanning dispensing nozzle while controlling the dispensing temperature of the etchant in real time as a function of the radial position of the dispensing nozzle over the wafer. The dispensing temperature of the etchant is controlled to enhance the effectiveness of the etchant and thus compensate for the lower etching rate zones in the wafer.

Abstract: According to an aspect of an exemplary embodiment, there is provided a method of obtaining graphene, the method comprising: preparing a graphene forming structure of which a first graphene is formed on one surface and a second graphene is formed on another surface, and that comprises at least one metal catalyst member; disposing a first carrier and a second carrier on the first graphene and the second graphene, respectively; and removing the metal catalyst member by applying an etchant to a side surface of the graphene forming structure while winding up the first carrier and the second carrier by respectively rotating a pair of rolls formed to face each other.

Abstract: The substrate treatment method is for treating a substrate with a chemical liquid in a treatment chamber. The method includes a higher temperature chemical liquid supplying step, and a rinse liquid supplying step after the higher temperature chemical liquid supplying step. The rinse liquid supplying step includes: a peripheral edge portion treating step of supplying the rinse liquid selectively onto a center portion of the front surface of the substrate so that a chemical liquid treatment is inhibited on the center portion while being allowed to proceed on a peripheral edge portion of the front surface of the substrate; and an entire surface rinsing step of spreading the rinse liquid over the entire front surface of the substrate to replace the chemical liquid with the rinse liquid on the entire front surface of the substrate after the peripheral edge portion treating step.

Abstract: Method of selectively etching a first material on a substrate with a high selectivity towards a second material by flowing a liquid etchant across a substrate surface at a flow sufficiently fast to generate a minimum mean velocity parallel to the substrate's surface, wherein the first material is selected from a group including materials with semiconducting properties based on at least two different chemical elements.

Abstract: A polishing method includes causing a polishing pad arranged on a turn table to rotate together with the turn table, and polishing a surface of a substrate by using the rotating polishing pad while supplying a chemical fluid to a surface of the polishing pad on a fore side of the substrate from an oblique direction with respect to the surface of the polishing pad.

Abstract: A method of fabricating a touch screen panel according to an embodiment of the present invention includes: forming a reinforcing layer on the top and the bottom of a glass substrate by reinforcing the entire surface of the glass substrate defining a plurality of unit cell regions; forming the touch screen panels in the unit cell regions on a side of the glass substrate with the reinforcing layers; cutting the reinforced glass substrate into the touch screen panels; forming passivation layers on the outer surfaces of the touch screen panels and sequentially stacking the touch screen panels; and simultaneously with the stacking, performing healing on the non-reinforced cut-sides of the stacked touch screen panels.

Abstract: Disclosed are a liquid processing method, a liquid processing apparatus, and a recording medium that can prevent convex portions of a target substrate from collapsing when a rinsing liquid is dried. A base surface of a target substrate is hydrophilized and the surfaces of convex portions become water-repellent by surface-processing the target substrate which includes a main body, a plurality of convex portions protruding from the main body, and a base surface formed between the convex portions on the substrate main body. Next, a rinsing liquid is supplied to the target substrate which has been subjected to the surface processing. Thereafter, the rinsing liquid is removed from the target substrate.

Abstract: There is provided with an etching method using an etching apparatus. Four arms can be positioned in a direction substantially from a center of the stage toward a peripheral portion with an angle difference of about 90°. Etchant is supplied to a first position nearest to the center of the object which is rotating, from a first etchant supply nozzle placed on a first arm. Etchant is further supplied to a second position second nearest to the center of the object, from a second etchant supply nozzle placed on a second arm. The second arm is substantially symmetrically positioned with respect to the first arm and the second arm has an angle difference of about 180° with respect to the first arm.

Abstract: Apparatuses, and related methods, for processing a workpiece that include a particular barrier structure that can overlie and cover a workpiece. Apparatuses, and related methods, for processing a workpiece that include a particular movable member that can be positioned over and moved relative to a workpiece. Apparatuses, and related methods, for processing a workpiece that include a particular ceiling structure that can overlie a processing chamber. Nozzle devices, and related methods, that include a particular annular body. Nozzle devices, and related methods, that include a particular first, second, and third nozzle structure.

Abstract: A method includes applying a final etch-resistant material to an in-process substrate so that the final etch-resistant material at least partially covers first microcontact portions integral with the substrate and projecting upwardly from a surface of the substrate, and etching the surface of the substrate so as to leave second microcontact portions below the first microcontact portions and integral therewith, the final etch-resistant material at least partially protecting the first microcontact portions from etching during the further etching step. A microelectronic unit includes a substrate, and a plurality of microcontacts projecting in a vertical direction from the substrate, each microcontact including a base region adjacent the substrate and a tip region remote from the substrate, each microcontact having a horizontal dimension which is a first function of vertical location in the base region and which is a second function of vertical location in the tip region.

Abstract: A method and device for treating silicon wafers. In a first step, the silicon wafers (22) are conveyed flat along a continuous, horizontal conveyor belt (12, 32) and nozzles (20) or the like spray an etching solution (21) from the top onto the wafers to texture them, only little etching solution (21) being applied to the silicon wafers (22) from below. In a second step, the silicon wafers (22), which are aligned as in the first step, are wetted exclusively from below with the etching solution (35) to etch-polish them.

Abstract: Disclosed is an end point detecting method of metal etching and a device thereof. The end point detecting method of metal etching comprises: performing scan to a metal film to acquire a proportion of a transparency area of the metal film in a scanned area; judging whether the proportion of the transparency area reaches a predetermined value or not; and confirming a current etching time of the metal film as an etching end point time when the predetermined value is reached. The device comprises an acquirement module, a judgment module and a confirmation module. The acquirement module performs scan to the metal film to acquire the proportion of the transparency area. The judgment module judges whether the proportion reaches the predetermined value or not. The confirmation module confirms the current etching time of the metal film as the etching end point time when the proportion reaches the predetermined value.

Abstract: In a substrate processing method according to the present invention, a cleaning liquid nozzle supplies a rinsing liquid to a central portion of a substrate and thereafter moves from a position corresponding to the central portion of the substrate to a position corresponding to a peripheral, edge portion thereof while supplying the rinsing liquid before stopping at the position corresponding to the peripheral edge portion. Next, a drying liquid nozzle moves from the position corresponding to the peripheral edge portion to the position corresponding to the central portion while supplying a drying liquid. Then, the drying liquid nozzle is kept stationary at the position corresponding to the central portion for a predetermined period of time while supplying the drying liquid. Thereafter, a gas nozzle moves from the position corresponding to the central portion to the position corresponding to the peripheral edge portion while supplying an inert gas.

Abstract: The invention relates to novel etching media in the form of etching pastes for etching selected areas or the entire area of silicon surfaces and layers, in addition to the use of said media.

Abstract: Methods and apparatus are disclosed for etching flexible glass sheets (13) in which the sheets (13) are transported in a near vertical orientation past non-contact, liquid-ejecting bearings (3) which apply an etching solution (e.g., an aqueous NaF/H3PO4 solution) to the sheets (13). In certain embodiments, the uppermost liquid-ejecting bearing (3) is above the top edge of the sheet (13) and thus is able to apply etching solution to the top of the sheet. In other embodiments, a top shower (11), which includes a set of spray nozzles (21) located above and distributed along the length of the apparatus, is used to apply etching solution to the top of the sheet (13). Using the disclosed methods and apparatus, glass sheets (13) produced by a fusion process are provided which have areas greater than five square meters and average surface roughness values in the range of 0.5 nanometers to 1.1 nanometers.

Abstract: Provided is a liquid processing apparatus in which a target substrate is horizontally held on a substrate holding unit and rotated around a vertical shaft, and the chemicals are supplied from a chemical supplying unit to the bottom surface of the target substrate that is rotating. In particular, the liquid processing apparatus performs a first step in which the chemicals are supplied to the target substrate while rotating the target substrate at a first rotation speed, a second step in which the supply of the chemicals is halted and the chemicals are thrown off by rotating the target substrate at a second rotation speed higher than the first rotation speed, and a third step in which the rinse liquid is supplied to the target substrate while rotating the target substrate at a third rotation speed equal to or lower than the first rotation speed.

Abstract: An apparatus for wet etching metal from a semiconductor wafer comprises a wafer holder for rotating a wafer and a plurality of nozzles for applying separate flow patterns of etching liquid to the surface of the wafer. The flow patterns impact the wafer in distinct band-like impact zones. The flow pattern of etching liquid from at least one nozzle is modulated during a total etching time control the cumulative etching rate in one local etch region relative to the cumulative etching rate in one or more other local etch regions. Some embodiments include a lower etch chamber and an upper rinse chamber separated by a horizontal splash shield. Some embodiments include a retractable vertical splash shield used to prevent splashing of etching liquid onto the inside walls of a treatment container. An etch-liquid delivery system includes a plurality of nozzle flow paths having corresponding nozzle flow resistances, and a plurality of drain flow paths having corresponding drain flow resistances.

Abstract: Example embodiments are directed to a wafer dividing apparatus and method thereof. The wafer dividing apparatus includes a chuck unit having upper and lower chucks, a cutting wire that is provided in a space between the upper and lower chucks to cut a wafer and driven by a first driving unit, and an etchant supplying nozzle supplying etchant to a groove of the wafer, which is formed by the cutting wire.

Abstract: A method for processing a semiconductor wafer includes bringing at least one grinding tool in contact with the semiconductor wafer; removing material from the semiconductor wafer using the grinding tool; disposing a liquid medium having a viscosity of at least 3×10?3 N/m2·s and at most 100×10?3 N/m2·s between the at least one grinding tool and the semiconductor wafer; and separating the at least one grinding tool and the semiconductor wafer so as to end the processing.

Abstract: Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.

Abstract: An object of the present invention is to provide a method for etching a single wafer, which effectively realizes a high flatness of wafer and an increase in productivity thereof. In a method for etching a single wafer, a single thin disk-like wafer sliced from a silicon single crystal ingot is spun, and a front surface of the wafer is etched with an etching solution supplied thereto. In the method, a plurality of supply nozzles are disposed above and opposite to the front surface of the wafer at different portions in the radial direction of the wafer, respectively; and then one or more conditions selected from the group consisting of temperatures, kinds, and supply flow rates of etching solutions from the plurality of supply nozzles are changed.

Abstract: A passivation film having a predetermined width from an outer peripheral end portion toward an inner side and extending along the outer peripheral end portion is formed on a front surface of a semiconductor substrate. An outer peripheral end surface orthogonal to the front surface and a rear surface is formed by grinding the outer peripheral end portion of the semiconductor substrate. A thickness of the semiconductor substrate is reduced to a predetermined thickness by grinding the rear surface. The ground rear surface is etched by discharging a mixed acid onto the rear surface while rotating the semiconductor substrate with the rear surface facing upward, to remove a fracture layer. Thereby, chipping or cracking of the semiconductor substrate is suppressed.

Abstract: A method of manufacturing a semiconductor device includes preparing a semiconductor wafer having a device area, an end face, and a surface peripheral area located outside the device area and between the end face and the device area. Forming a Cu layer on the semiconductor wafer and rotating the wafer in a horizontal plane. Emitting a first liquid from an edge nozzle towards the surface peripheral area which selectively removes a first unnecessary material in the surface peripheral area. Emitting a protecting liquid toward the semiconductor wafer, thereby protecting the device area from the first liquid. An angle of a longitudinal axis of the edge nozzle with respect to a tangent of the semiconductor wafer at a point, where the longitudinal axis of the edge nozzle intersects the end face of the wafer, is set in the range of 0 to 90 degrees in plan view.

Abstract: Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.

Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.

Abstract: Provided is a method and apparatus for cleaning a photomask. The photomask including a first region and a second region surrounding the first region, a pattern to be protected disposed on the first region, and a material to be removed exists on the second region. A cleaning liquid is sprayed from an inside region of the second region toward an outer region of the second region to remove the material, and a gas is blown from the first region toward the second region to protect the pattern.

Abstract: An apparatus for etching a substrate includes (a) a nozzle system including at least one nozzle through which acid solution containing at least hydrofluoric acid is sprayed onto the substrate, (b) a mover which moves at least one of the nozzle system and the substrate relative to the other in a predetermined direction in such a condition that the substrate and the nozzle system face each other, (c) a filter system which filters off particles out of the acid solution having been sprayed onto the substrate, and (d) a circulation system which circulates the acid solution having been sprayed onto the substrate, to the filter system, and further, to the nozzle system from the filter system.

Abstract: Methods and apparatus are disclosed for etching flexible glass sheets (13) in which the sheets (13) are transported in a near vertical orientation past non-contact, liquid-ejecting bearings (3) which apply an etching solution (e.g., an aqueous NaF/H3PO4 solution) to the sheets (13). In certain embodiments, the uppermost liquid-ejecting bearing (3) is above the top edge of the sheet (13) and thus is able to apply etching solution to the top of the sheet. In other embodiments, a top shower (11), which includes a set of spray nozzles (21) located above and distributed along the length of the apparatus, is used to apply etching solution to the top of the sheet (13). Using the disclosed methods and apparatus, glass sheets (13) produced by a fusion process are provided which have areas greater than five square meters and average surface roughness values in the range of 0.5 nanometers to 1.1 nanometers.

Abstract: A method for obtaining a layout design for an existing integrated circuit, in which, an integrated circuit die is polished with a tilt angle to form an inclined polished surface and one or more images of the inclined polished surface are obtained. The images may be overlapped directly, or the image or the images may be utilized to provide information to obtain a layout design comprising at least one repeating unit structure of the layout structure.

Abstract: A method for cleaning a semiconductor wafer composed of silicon directly after a process of chemical mechanical polishing of the semiconductor wafer includes transferring the semiconductor wafer from a polishing plate to a first cleaning module and spraying both side surfaces of the semiconductor wafer with water at a pressure no greater than 1000 Pa at least once while transferring the semiconductor wafer. The semiconductor wafer is then cleaned between rotating rollers with water. The side surfaces of the semiconductor wafer are sprayed with an aqueous solution containing hydrogen fluoride and a surfactant at a pressure no greater than 70,000 Pa. Subsequently, the side surfaces are sprayed with water at a pressure no greater than 20,000 Pa. The wafer is then dipped into an aqueous alkaline cleaning solution, and then cleaned between rotating rollers with a supply of water. The semiconductor wafer is then sprayed with water and dried.

Abstract: Nozzle arms for holding discharge heads are caused by a pivotal driving part to move between a processing position above a substrate and a standby position outside a processing cup surrounding a substrate. When the nozzle arms having cleaned a substrate is placed at the standby position, a cleaning solution is ejected from a shower nozzle toward the nozzle arms arranged obliquely downward of the shower nozzle. The three nozzle arms are caused to move up and down such that the nozzle arms cut across a jet of a cleaning solution discharged obliquely downward, thereby cleaning the three nozzle arms in order. Then, a nitrogen gas is ejected from a drying gas nozzle and sprayed on the nozzle arms to remove the cleaning solution attached to the nozzle arms, thereby drying the nozzle arms.