Abstract: A liquid processing apparatus includes containers 26, 27, 26a, 26b surrounding processing chambers 51, 52 for accommodating a plurality of wafers W and nozzles 54, 56 for supplying a processing liquid to the substrates W in order to perform a liquid process. The nozzles 54, 56 are respectively equipped with a plurality of ejecting orifices 53, 55 capable of ejecting the processing liquid in a plane manner, allowing the substrates W to be processed uniformly and effectively.

Abstract: Disclosed is a process for the surface treatment of an aluminum support for printing plate which comprises a step of brush-graining with an abrasive brush and an abrasive slurry, characterized in that as the abrasive there is used aluminum hydroxide, the aluminum hydroxide which has been used in graining is dissolved in a sodium aluminate solution and the sodium aluminate solution having a raised supersaturation degree, the aluminum hydroxide which has been left undissolved and seed crystal aluminum hydroxide undergo hydrolysis reaction to produce crystalline aluminum hydroxide which is then purified and recovered.

Abstract: The present invention relates to micro electromechanical systems (MEMS) devices and more specifically to a process for manufacturing MEMS devices having at least one suspended structural element. The present invention seeks to provide an improved method for manufacture of MEMS devices having improved safety and increased yield and throughput compared to conventional EDP immersion process techniques. MEMS devices are made using a modified dissolution process that removes, in a selective etch step, inactive silicon to release an active silicon device from a sacrificial substrate. The present invention uses a selective etchant in conjunction with a commercial spray acid processing tool to provide a dissolution process with improved throughput, improved repeatable and uniform etch rates and reduction in the number of processing steps and chemical containment for improved safety.

Abstract: A chemical etching system provides a mixture of sulfuric acid and hydrogen peroxide and serves as the etchant for removing residual copper from an edge bevel region of a semiconductor wafer. The etching system includes a dilution module where concentrated sulfuric acid and concentrated hydrogen peroxide are diluted to the appropriate concentrations and then stored. To reduce the likelihood that oxygen bubbles (from hydrogen peroxide decomposition) will appear in the etchant solution, stored sulfuric acid and hydrogen peroxide are mixed immediately prior to use. In this manner, the dissolved oxygen concentration in the hydrogen peroxide decreases well below the saturation level.

Abstract: A clean, recirculating and processing method which prevents surface contamination of an object, such as a semiconductor, semi-conductor wafer, glass for LCD or magnetic disk is provided which includes covering the front and rear surfaces of an object to be processed with front and rear shielding plates and allows the object to rotate relative to the front and rear shielding plates. The fluid is supplied between the front surface of the object and the front shielding plate allowing the front surface to be processed. The remaining fluid is collected and recirculated between the rear surface of the object and the rear shielding plate allowing the rear surface of the object to be processed. An apparatus for accomplishing the method is also disclosed.

Abstract: Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems apply liquid etchant in a precise manner at the edge bevel region of the wafer under viscous flow conditions, so that the etchant is applied on to the front edge area and flows over the side edge and onto the back edge in a viscous manner. The etchant thus does not flow or splatter onto the active circuit region of the wafer.

Abstract: The present invention removes unwanted deposited material from a substrate backside by chemically dissolving the material, while substantially preventing dissolution of the material from the substrate front side. Preferably, the dissolving process is included with a spin-rinse-dry process and uses a greater flow rate of rinsing fluid directed onto the front side compared to the flow rate of dissolving fluid directed onto a substrate backside to protect the substrate front side while the unwanted backside material is removed. The present invention includes the method of dissolving the unwanted material from the backside and edge and the associated apparatus.

Abstract: Methods for removing unwanted siloxane and silsesquioxane dielectric film precursor residues from substrates and spin on coating devices are provided. The methods of the invention use liquid silicones to dissolve the film precursors. Solutions of the film precursors in the silicones do not undergo gelling or increase in molecular weight.

Abstract: In a method for sharpening a probe, a probe preform having a longitudinal axis is at least partially immersed in a mixture containing at least an etch solution and a non-etch solution having a lower specific gravity than and which is not miscible with the etch solution. The probe preform is moved in the mixture along the longitudinal axis thereof during etching at a speed which does not exceed a taper length forming speed for a probe preform which is not moved in the etch solution during etching. An end of the probe preform is etched into a sharp tapered tip having a taper angle greater than that obtained for the probe preform which is not moved during etching.

Abstract: A method and apparatus for manufacturing a semiconductor physical quantity sensor according to the present invention achieves the high sensing accuracy and reliability and prevents a sticking phenomenon. Specifically, a semiconductor physical quantity sensor is cleaned by a displacement liquid and is dried while a SOI substrate is revolving. The number of revolutions is determined so that a suction force (Fs), which acts on a silicon substrate by a surface tension of the displacement liquid, a sensor spring force FK and a centrifugal force (Fr) generated by the acceleration in the revolution can satisfy the following condition: (FK+Fr)>FS. In order to prevent the sticking phenomenon after the stop of the spray, the semiconductor physical quantity sensor is dried by spraying an inert gas such as nitrogen including minus ions so that the revolving SOI substrate can eliminate static electricity generated by friction of the air flow.

Abstract: A wet etching apparatus and method to shorten processing time and to eliminate formation of unintended mask pattern are described. In the conventional art, after a mask pattern is formed, alien substances such as water mist or stain are left on the substrate. The alien substances act as an etching block in the wet etching process. This generates an unintended mask pattern. The present invention uses ultraviolet light to remove the alien substances prior to the etching process. When the alien substances are removed, the intended mask pattern is generated after the etching process. The wet etching device according to the present invention includes an ultraviolet cleaner and a conveyor to convey substrates to and from the ultraviolet cleaner. Spaces for the ultraviolet cleaner and the conveyor are created in the wet etching apparatus by reducing space for cassettes and reducing space required by the loader.

Abstract: By locally heating or cooling a substrate in an etching process, temperature unevenness is controlled, and convection currents of an etching liquid are restricted simultaneously. By setting the etching temperature low in an initial stage of the etching process and increasing it in a final stage, uniform and quick etching is possible. In a drop etching method, generation of bubbles can be prevented to ensure uniform etching by providing gas release openings in a member opposed to the substrate.

Abstract: A centrifugal spray processor for dispensing a stream of ozonated water toward one or more semiconductor wafers at a non-parallel angle that is inclined from the plane of the surface of the semiconductor wafer. The spray processor includes one or more supports for receiving a plurality of semiconductor wafers and a spray post for dispensing ozonated water from a reservoir onto the semiconductor wafers. The spray post includes a plurality of nozzles that are configured to dispense ozonated water at a generally downward angle toward the surface of the semiconductor wafer. The angle of incidence of the stream of ozonated water from the spray post as measured from the plane of the semiconductor is greater than 0 degrees, and is preferably greater than about 0 degrees and less than or equal to about 30 degrees depending upon the configuration of the spray post and the semiconductor wafers.

Abstract: When liquid for recording such as ink is accumulated around ejection ports deviations in ejecting (flying) directions of ink droplets ejected from ejection ports in an ink-jet recording head are observed so that recording results of high quality can not be attained any more. In order to prevent such deviations water-repellent treatments have been employed. The present invention provides a means with a simple ink-jet recording head manufacturing procedure enable to provide an ink-jet recording head at a low cost. In order to provide such ink-jet recording head the following method is proposed.

Abstract: A surface processing method by blowing submicron particles is disclosed, in which submicron particles are blown against a surface of a work to deposit a layer of the material of the particles on a surface of the work, or etching the surface of the work.

Abstract: A Bernoulli type chucking device 2 supports the rear surface 12 of a semiconductor wafer 1. The etchant 30 turns around and reaches the portion beneath the beveled portion 13 of the semiconductor wafers 1. However, the etchant is restrained on the beveled portion by a gas flow coming from the openings 22A of the gas-expelling passages 22 in the centrifugal direction. The gas belows off the etchant, which has turned around and is going to reach the rear surface. Thus, the beveled portion 13 is mirror-finished when etching of the semiconductor wafer front surface 11 is carried out, and mirror-finishing of part of the rear surface 12 can be avoided. Furthermore, mirror-finishing can be performed without being influenced by the shape of the beveled portions of semiconductor wafers. Compared with conventional method, this invention can perform mirror-finishing more efficiently.

Abstract: A method of processing a substrate for removing a coating film from a substrate by dissolving the coating film with a solvent, comprising the steps of (a) supplying a solvent independently to each of peripheral portions of an upper surface side and a lower surface side of the substrate, and (b) supplying the solvent to the peripheral portion of the lower surface side of the substrate in an amount lower than the solvent supplied to the peripheral portion of the lower surface side in the step (a) or lower than that supplied to the peripheral portion of the upper surface side in this step (b), or terminating a supply of the solvent.

Abstract: This invention relates to a method and system for establishing and maintaining a precise concentration of dissolved gas in a liquid. More particularly, the invention relates to a method and system of establishing and maintaining a precise concentration of dissolved gas in a liquid by utilizing a gas blend comprising a sufficient concentration of the desired gas so as to be in equilibrium with the desired concentration of the gas to be dissolved in the liquid, i.e., a “matched gas blend”, to prepare a liquid admixture comprising the desired concentration of the gas. In this manner, the method and system of the present invention are able to produce liquid admixtures comprising precise concentrations of dissolved gas suitable for use in applications with tight specifications, and further, are capable of delivering the liquid admixture so produced to a point of use with substantially no loss of dissolved gas.

Abstract: A method of manufacturing semiconductor devices is provided, including the formation of a conductive plug and the minimizing of the step-height of an interlayer dielectric layer. An etching composition is also provided for such a manufacturing method. The method of manufacturing semiconductor devices includes the steps of forming an insulating layer over a semiconductor substrate, forming contact holes in the insulating layer, forming a conductive layer over the insulating layer to burying the contact holes, rotating the semiconductor substrate, and etching the conductive layer by supplying an etching composition on the rotating semiconductor substrate, and spin-etching the tungsten layer using an etching composition such that the conductive layer remains only inside the contact holes and does not remain over the insulating layer.

Abstract: The invention concerns a method for wet-chemical cleaning and etching of disc-shaped substrates in a closed processing chamber, wherein the substrate to be processed is received by a substrate support, the substrate is rotated and both sides of the substrate are simultaneously sprayed with chemicals.

Abstract: A method is provided for etching and removing extraneous molybdenum or debris on ceramic substrates such as semiconductor devices and also for molybdenum etching in the fabrication of molybdenum photomasks. The method employs a multi-step process using an acidic aqueous solution of a ferric salt to remove (etch) the molybdenum debris followed by contacting the treated substrate with an organic quaternary ammonium hydroxide to remove any molybdenum black oxides which may have formed on the exposed surface of treated molybdenum features in ceramic substrates. The method is environmentally safe and the waste solutions may be easily waste treated for example by precipitating the ferric salts as ferric hydroxide and removing anions such as sulfate by precipitation with lime. The method replaces the currently used method of employing ferricyanide salts which create serious hazardous waste disposal and environmental problems.

Abstract: A polishing pad (24) is rotated about an axis parallel to a surface (10) of a semiconductor wafer (12). The polishing pad (24) is supported by a roller (22) that receives fluid (38) and distributes the fluid through the polishing pad (24) across the surface of the wafer. The surface (10) of the wafer is moved in relation to the polishing pad so that the wafer surface is smoothed, or touch-polished, with or without the use of abrasive slurry. In one embodiment the wafer is rotated between an upper roller assembly (20) and a lower roller assembly (14). In another embodiment, the polishing pad is held at an angle to the surface of the wafer to remove a ridge of material from a donor wafer for re-use in a thin film transfer process.

Abstract: Atomized particles within a desired size range (e.g., 1 micron to about 5 microns) are produced from two immiscible fluids, a first fluid source containing the formulation to be atomized, and a second fluid source which is contained in a pressure chamber surrounding at least the area where the first liquid is to be provided. The invention provides methods for: the production of templates for microfabrication, such as particles that serve as templates for self-assembly of monolayers; the creation of small particles to serve as building blocks for the microassembly of objects; and the use of an atomizate to etch configurations and/or patterns onto the surface of an object by removing a selected portion of the surface.

Abstract: A method of removing photoresist at the edge of waters in an integrated circuit the method comprising the following steps. A substrate having at least a MOS component region thereabove is provided. A photoresist layer is formed over the substrate. A pattern is defined on the photoresist layer by exposure and development. The photoresist layer at the edge of the substrate is removed by a chemical reagent and centrifugal effect.

Abstract: A method of manufacturing semiconductor devices is provided for forming a tungsten plug or polysilicon plug and minimizing the step-height of the intermediate insulating layer. An etching composition for this process is also provided as are semiconductor devices manufactured by this process. The method of manufacturing semiconductor devices includes the steps of forming a tungsten film having a certain thickness on an insulating layer and burying contact holes formed in the insulating layer constituting a specific semiconductor structure, and spin-etching the tungsten film using a certain etching composition such that the tungsten film is present only inside the contact holes not existing on the insulating film. The etching composition includes at least one oxidant selected from the group comprising H.sub.2 O.sub.2, O.sub.2, IO.sub.4.sup.-, BrO.sub.3, ClO.sub.3, S.sub.2 O.sub.8.sup.-, KlO.sub.3, H.sub.5 IO.sub.6, KOH, and HNO.sub.3, at least one enhancer selected from the group comprising HF, NH.sub.4 OH, H.

Abstract: The invention involves technology related to chemical mechanical polishing using a chemical mechanical polishing apparatus having a wafer carrier for holding a semiconductor wafer, a polishing platen which is able to be rotated and which is positioned facing the surface of the wafer carrier on which the wafer is held, and a circular polishing cloth mounted on the polishing platen for polishing the semiconductor wafer, the polishing cloth having a smaller diameter than the diameter of the semiconductor wafer, and the polishing platen being movable horizontally across the surface of the semiconductor wafer. While rotating the semiconductor wafer held on the wafer carrier, the polishing platen is moved horizontally across the surface of the semiconductor wafer so that the displacement velocity of the polishing platen is slower at a central portion of the semiconductor wafer than at an outer portion, and the surface of the semiconductor wafer is polished with the polishing cloth.

Abstract: A glass or metal wire is precisely etched to form the paraboloidal or ellipsoidal shape of the final desired capillary optic. This shape is created by carefully controlling the withdrawal speed of the wire from an etchant bath. In the case of a complete ellipsoidal capillary, the etching operation is performed twice in opposite directions on adjacent wire segments. The etched wire undergoes a subsequent operation to create an extremely smooth surface. This surface is coated with a layer of material which is selected to maximize the reflectivity of the radiation. This reflective surface may be a single layer for wideband reflectivity, or a multilayer coating for optimizing the reflectivity in a narrower wavelength interval. The coated wire is built up with a reinforcing layer, typically by a plating operation. The initial wire is removed by either an etching procedure or mechanical force. Prior to removing the wire, the capillary is typically bonded to a support substrate.

Abstract: The present invention provides a wet etching method applied to a thin, including the steps of (a) setting in advance an etching rate of said thin film in view of a kind of the thin film to be etched, components of said etchant solution, and temperature, (b) loading the substrate on a spin chuck such that the surface having the thin film formed thereon faces upward and, (c) detecting a thickness of the thin film in at least a peripheral portion and a central portion of the substrate.

Abstract: In order to provide a post-treatment method for dry etching which is improved to be capable of completely removing a deposit resulting from dry etching for forming a wire, a workpiece layer is formed on an underlayer oxide film which is formed on a wafer. A resist pattern having a prescribed shape is formed on the workpiece layer. The workpiece layer is dry-etched through the resist pattern serving as a mask. The resist pattern is removed. Ice particles or droplets are injected toward the wafer, thereby removing the deposit.

Abstract: A method for planarizing an exposed metal surface on a substrate is provided in which surface irregularities are eliminated. A photoresist layer is first removed from the substrate. Then a conformal planarizing head is placed in contact with the metal surface while chemical etchant essentially free of abrasives is supplied to an interface between the metal substrate and the planarizing head. The surface is then planarized until it is free of irregularties.

Abstract: A novel modular muffle etch injector assembly for use in a gas blanketed down-flow chemical vapor deposition apparatus of the type having a muffle and a modular gas injector assembly for introducing chemical vapors into a deposition chamber, the muffle being adapted for receiving and supporting the gas injector assembly, wherein deposition material residue collects on a lower surface of the muffle. The etch injector assembly of the present invention comprises an etch chamber having vertical sidewalls, a closed top end and an open bottom end, a supply mechanism for introducing a liquid etchant into the etch chamber, and a sealing device disposed along the open end of the etch chamber for providing a seal between the etch chamber and the lower surface of the muffle to confine the etchant to the etch chamber. The etch injector assembly preferably also includes an exhaust means for removing chemical vapors from the etch chamber.

Abstract: A processing apparatus, which removes a processing agent adhered to an peripheral portion of a substrate on which the processing agent is coated, comprises a nozzle having a recess portion into which the peripheral portion of the substrate is inserted and for supplying a solvent to the peripheral portion of the substrate which has been inserted into the recess portion, a moving mechanism for moving the nozzle along the peripheral portion of the substrate, and rotating bodies for guiding the peripheral portion of the substrate to an inlet of the recess portion of the nozzle, whereby the processing agent on the peripheral portion of the substrate can be removed by the solvent which has been supplied to the peripheral portion of the substrate.

Abstract: The present invention discloses a method for depositing a coating layer on an article without edge bead formation by integrating the steps of an edge bead rinsing process with a coating spin-out process such that an edge portion of the wafer can be efficiently cleaned with a cleaning solvent when the coating material is still in its liquid state. While the present invention method can be applied to any coating materials and to any coated substrate, it is particularly suitable for cleaning a spin-on-glass material from a semiconductor wafer such that the wafer edge is not coated with a SOG material and thus particulate contamination caused by cracked SOG from the wafer edge can be avoided.

Abstract: The invention discloses a polyester film for leader tapes, including a polyester film having been brought into contact with an alkaline liquid and etched on at least one side to have a thickness pattern, wherein the polyester film has a tip portion having a thickness of 10 .mu.m or more and is 80% or less of the original thickness. The invention also includes a process for producing a polyester film for leader tapes including the steps of bringing a polyester film into contact with an alkaline liquid and etching the polyester film at least on one side to form a tip portion having a thickness of 10 .mu.m or more and 80% or less of the original thickness, with the etched depth controlled differently from position to position, for processing to have a desired thickness pattern.

Abstract: A process for producing lithographic features in a substrate layer is is described, comprising the steps of lowering a stamp (15) carrying an reactant (14) onto a substrate (10), confining the subsequent reaction to the desired pattern, lifting said stamp and removing the debris of the reaction from the substrate. Preferably, the stamp carries the pattern to be etched or depressions corresponding to such a pattern. Using the described methods, patterns with submicron features can be generated. The method allows a general solution to parallel handling and transfer of materials in a variety of technical fields.

Abstract: A process for etching the sides of a trace remove the feet which extend laterally out from the sides and over a circuit board substrate adjacent the trace.

Abstract: A method of using diluted nitric acid and an edge bead removal tool to remove copper from the perimeter of a semiconductor wafer is provided. In one embodiment, sensitive areas of the wafer are covered with photoresist, and the wafer perimeter cleared of photoresist, before the acid is applied. In another embodiment, sensitive areas of the wafer are protected with water spray as the copper etchant is applied. In a third embodiment, the nitric acid is applied to clear the wafer perimeter of copper before a chemical mechanical polishing (CMP) is performed on the layer of deposited copper. The excess thickness of copper protects copper interconnection structures from reacting with the copper etchant. All these methods permit copper to be removed at a low enough temperature that copper oxides are not formed. A semiconductor wafer cleaned of copper in accordance with the above-described method, and a system for low temperature copper removal is also provided.

Abstract: A technique for polishing an exposed surface of metal on a substrate to remove defects from mechanical working of metals, such as burrs and pigtails resulting from drilling, and defects from plating, such as nodules and depressions, is provided. The substrate has an exposed metal surface such as copper thereon which is to be treated to remove defects. A planarizing or polishing head, preferably a rotating roller, is provided which is continuously rotating with respect to the substrate, with the head in contact with the metal surface on the substrate. A chemical etchant, essentially free of abrasive material, is continuously supplied to the interface between the metal surface and the head. The treating and polishing continues until the defects have been removed or reduced to an acceptable value. In some instances where significant height reduction is required, thus requiring significant metal removal, several passes of the substrate may be required or a device with multiple heads may be used.

Abstract: Disclosed is a method of dissolving a surface of a semiconductor substrate or a thin-film surface layer formed on the semiconductor substrate, with an oxidizing agent and fluorine-series gas. The method is characterized in that an initial dissolution rate is controlled by gradually increasing a concentration of fluorine-series gas introduced in a dissolving solution containing the oxidizing agent.

Abstract: Method and apparatus for processing substrates through a number of wet treatments. A substrate is set on a substrate rotating means for rotation in a horizontal face-up position, within a housing which is open on its top side. By a treating liquid feed means having a treating liquid feed nozzle member, at least one kind of treating liquid is supplied onto upper surfaces of the substrate being rotated by the substrate rotating means. The treating liquid feed nozzle member is supported on a movable arm for displacement to and from an operative position vertically confronting the substrate and a receded standby position away from the substrate on the substrate rotating means. Located face to face with lower surfaces of the substrate is a nozzle means which supplies a fluid to the lower side of the substrate.

Abstract: A method is described for selectively etching photoresist on a semiconductor substrate having one or more layers of a spin on glass, including an edge bead that was formed when the glass was originally applied. First the wafer is coated with a layer of unexposed, undeveloped negative photoresist. Then, while spinning the wafer, a vertical jet of photoresist EBR solvent is directed to a point just inside the edge so that photoresist gets removed from an annular area extending inwards from the perimeter. The edge bead is then removed using a liquid etchant and integrated circuit processing can now proceed, making use of the unexposed, undeveloped layer of photoresist in the usual way; that is, exposing it through a mask and then developing and baking it before using it as an etch mask. The method is general and may be used in other situations where selective removal of photoresist along the periphery is required and where the remaining resist is to be used for other purposes.

Abstract: The method and system of the invention allow etching even relatively thick layers on the rear side of a semiconductor substrate where the front side is resist-free. An etching solution is sprayed in fine droplets onto the rear side of the semiconductor substrate. The semiconductor substrate may thereby be heated to a temperature .ltoreq.100.degree. C.

Abstract: A wet chemical process tank for processing semiconductor wafers equipped with a specially designed fluid dispenser positioned at the bottom of the tank where the dispenser has a fluid dispensing member having an elongated body connected on at least one end to at least one support member for stabilizing the member and a fluid passage therein in fluid communication with a plurality of openings provided on at least one of the vertical sides of the member such that a fluid may only exit the member in a horizontal direction so that bubbles generated do not directly contact the semiconductor wafers suspended at the center of the tank.

Abstract: A method of preventing the occurrence of side etch in a wet etching method to form a circuit layer which meets the requirement of a high circuit density. First, etching is partially done using etchant having a relatively high etching rate with a spray pressure of a relatively small value, then etching is carried out using a second etchant having a relatively low etching rate with a high spray pressure. In an optional finishing step, etchant containing abrasive is used.

Abstract: Apparatus and method of an improved gas delivery system for delivering reactant material to a workpiece, such as a substrate, being operated on by a particle beam employs a shroud-type concentrator having an interior axial passage. Fluid reactant material is supplied to the axial passage for delivery to the workpiece. A particle beam can traverse the axial passage for impingement on the workpiece surface, concurrently if desired with the reactant delivery.

Abstract: An apparatus and method for selectively etching an encapsulant forming a package of resinous material around an electronic device includes a source of etchant solution and an etching assembly including an etch plate and a movable cover, the etch plate and cover forming an etching chamber. An etch head is supported by the etch plate and the electronic device package is mountable in the chamber on the etch head. In a first mode of operation a displacement pump pumps a first quantity of etchant solution into the etch head and in a second mode of operation the displacement pump agitates at least part of the first quantity of etchant solution repeatedly into and out of an etched cavity formed on an exterior surface of the electronic device package by reaction of the etchant solution with the resinous material. A waste reservoir and a waste outlet extending from the etch head to the reservoir is also provided. The etch head is easily removable from the etch plate by removal of an etch head retainer.

Abstract: An aqueous etchant composition containing about 0.01 to about 15 percent by weight of sulfuric acid and about 0.01 to about 20 percent by weight of hydrogen peroxide or about 1 to 30 ppm of ozone is effective in removing polymer residue from a substrate, and especially from an integrated circuit chip having aluminum lines thereon.

Abstract: A film dissolving liquid is ejected from a needle-shaped nozzle onto a peripheral edge portion of a substrate surface of a SOG film, while being subjected to the film dissolving liquid. The substrate is rotated in order to dissolve and remove the SOG film from the peripheral edge portion of the substrate. The film dissolving liquid is a solvent or mixture of two or more solvents selected from the group cyclohexanone, .gamma.-butyrolactone, ethyl lactate or ethyl pyruvate. As a result, a swelling of the SOG film is not created at the edge portion of the substrate. A crack is not therefore created at the edge portion of the SOG film, and generation of particles due to a damage at the film swelling portion thereof is prevented.

Abstract: A metal or glass wire is etched with great precision into a very narrowly tapering cone which has the shape of the desired final capillary-optics bore. By controlling the rate of removal of the wire from an etchant bath, a carefully controlled taper is produced. A sensor measures the diameter of the wire as it leaves the surface of the etchant. This signal is used for feedback control of the withdrawal speed. The etched wire undergoes a treatment to produce an extremely low surface-roughness. The etched and smoothed wire is coated with the material of choice for optimizing the reflectivity of the radiation being focused. This could be a vacuum evaporation, sputtering, CVD or aqueous chemical process. The coated wire is either electroplated, built up with electroless plating, or encapsulated in a polymer cylinder such as epoxy to increase the diameter of the wire for easier handling and greater robustness.

Abstract: An apparatus and method for selectively etching an encapsulant forming a package of resinous material around an electronic device includes a etchant solution source and an etching assembly including an etch plate and a movable cover forming an etching chamber. An etch head is supported by the plate and the device package is mountable in the chamber on the etch head. A first syringe pump pumps a first quantity of etchant into the etch head and a second syringe pump agitates or oscillates at least part of the first quantity of etchant repeatedly into and out of an etched cavity formed on the package exterior surface by reaction of the etchant solution with the resinous material. A waste outlet and reservoir extends from the etch head. The etch head is attached to an alumina ceramic heat exchanger including a spirally grooved passageway formed by an inserted core to heat a small volume of etchant immediately prior to introduction of the etchant against the package and subsequent oscillation.