Abstract: A substrate liquid processing apparatus includes a substrate rotation unit configured to hold and rotate a substrate within a processing space; a processing solution supply unit configured to selectively supply multiple kinds of processing solutions; a collection cup configured to collect the processing solutions; liquid collection regions formed at the collection cup and configured to collect the processing solutions; a liquid drain opening formed at a bottom portion of the collection cup and configured to discharge the processing solutions; an exhaust opening formed above the liquid drain opening; a fixed cover configured to cover an upper portion of the exhaust opening with a space therebetween; an elevating cup provided above the fixed cover and configured to guide the processing solutions into the liquid collection regions; and a cup elevating unit configured to move up and down the elevating cup depending on the kinds of the processing solutions.

Abstract: A wafer treatment method includes the following steps. A wafer is provided, wherein the wafer includes a substrate, a first oxide layer located on a front side of the substrate and a second oxide layer located on a back side of the substrate. An etching process is performed to entirely remove the first oxide layer. A fabricating method of a MOS transistor applying the wafer treatment method is also provided.

Abstract: A metal film (17) is etched by having an etching solution (5) sprayed to an object to be processed (48) having the metal film formed on a surface of a substrate (4). The etching solution (5) that contains gas micro-nano bubbles (40) having negative zeta potential is sprayed onto a surface of the metal film (17), removing a metal oxide (30) having positive zeta potential formed thereon.

Abstract: In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.

Abstract: An etchant is stored in a treating tank; a glass substrate is transported with transport rollers into the treating tank; the etchant is discharged from below the substrate to raise the substrate to a position above the transport rollers and below the surface of the etchant; the discharge of the etching liquid is stopped and the glass substrate is lowered to a position for contacting the transport rollers; the etchant is drained from the treating tank; and the glass substrate is unloaded with the transport rollers out of the treating tank. The disclosed method and apparatus can treat both front and back surfaces of the substrate uniformly.

Abstract: An apparatus and method for etching a portion of a wafer include a mount for holding a wafer having an edge, a front surface, a back surface and an axis perpendicular to the front and back surfaces. A frame is used to deliver an etchant to the wafer edge while the wafer is held with the wafer edge at a distance from the frame. A nonreactive fluid flow may be provided and directed along the front and back surfaces of the wafer edge to drive the etchant away from the front and back surfaces. The frame can be configured either to deliver the etchant in liquid form or to deliver the etchant in vapor form. The frame can include a plenum for directing the etchant in vapor form to the wafer edge within a receiving area of the plenum, or the frame can include a roller having a groove for receiving the wafer edge and for drawing the etchant in liquid form to the wafer edge.

Abstract: A foreign matter removal method that removes foreign matter attached to a surface of a substrate having been subjected to predetermined processing. An edge of a rotating substrate mounted on a mounting stage is irradiated with misalignment measurement laser light. The misalignment measurement laser light other than the laser light blocked by the edge of the substrate is received, and power thereof is detected. The amount of misalignment of the substrate is calculated based on the detected power of the misalignment measurement laser light and a detected rotation angle of the rotating substrate. The misalignment of the substrate is corrected for based on the calculated amount of misalignment. After that, foreign matter removal laser light is irradiated, and a process gas that is to react with the foreign matter is jetted to the edge of the substrate. Consequently, the foreign matter attached to the substrate is decomposed and removed.

Abstract: An first example method and apparatus for etching and cleaning a substrate comprises device with a first manifold and a second manifold. The first manifold has a plurality of nozzles for dispensing chemicals onto the substrate. The second manifold is attached to a vacuum source and/or a dry air/gas source. A second example embodiment is a wafer cleaning device and method that uses a manifold with capillary jet nozzles and a liquid capillary jet stream to clean substrates.

Abstract: A method for fabricating micromachined structures is provided. A structure including a dielectric layer, a metal layer and a passivation layer is formed, wherein the dielectric layer has a via thereon. An etching window is formed on the passivation layer. An etching solution is poured into the via through the etching window to perform a process of etching. After etching, the etching solution is removed and the passivation layer is removed. Finally, the structure is etched again to form the micromachined structure.

Abstract: An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.

Abstract: Methods and apparatus are disclosed for etching flexible glass sheets (13) in which the sheets (13) are transported in a vertical or near vertical orientation past non-contact, liquid-ejecting bearings (3) which apply an etching solution (e.g., an aqueous NaF/H3PO4 solution) to one or both sides of the sheets (13). In certain embodiments, the uppermost liquid-ejecting bearing (3) is above the top edge of the sheet (13) and thus is able to apply etching solution to the top of the sheet. In other embodiments, a top shower (11), which includes a set of spray nozzles (21) located above and distributed along the length of the apparatus, is used to apply etching solution to the top of the sheet (13). Using the disclosed methods and apparatus, glass sheets (13) produced by a fusion process are provided which have areas greater than five square meters and average surface roughness values in the range of 0.5 nanometers to 1.1 nanometers.

Abstract: A method for manufacturing a semiconductor device includes the step of conducting a cleaning process for a wafer formed with copper wiring lines to remove contaminations produced on a back surface of the wafer. The cleaning process is conducted by injecting onto the back surface of the wafer an etchant for removing contaminations and simultaneously injecting onto a front surface of the wafer a reductant containing hydrogen.

Abstract: A spin chuck in an apparatus for single wafer wet processing has structures at its periphery that, in combination with a supported wafer, form a series of annular nozzles that direct flowing gas from a chuck-facing surface of the wafer, around the edge of the wafer, and exhaust the gas away from the non-chuck-facing surface of the wafer, thereby preventing treatment fluid applied to the non-chuck-facing surface from contacting the edge region of the wafer. Retaining pins with enlarged heads engage the wafer edge and prevent it from being displaced upwardly when a high flow rate of gas is utilized.

Abstract: A method of removing material layer is disclosed. First, a semiconductor substrate is fixed on a rotating platform, where a remnant material layer is included on the surface of the semiconductor substrate. Afterward, an etching process is carried out. In the etching process, the rotating platform is rotated, and an etching solution is sprayed from a center region and a side region of the rotating platform toward the semiconductor substrate until the material layer is removed. Since the semiconductor substrate is etched by the etching solution sprayed from both the center region and the side region of the rotating platform, the etching uniformity of the semiconductor substrate is improved.

Abstract: A thin film removing device and a thin film removing method are capable of removing straight parts of a thin film formed on a square substrate from corners of the substrate, and of suppressing the formation of mists. An approach stage 20 having flat stage plates 23 capable of being disposed substantially flush with the surface of a substrate M mounted on a support table 22 is positioned close to the substrate M mounted on the support table 22. Removing nozzles 30 jet a solvent toward edge parts of the substrate M and suck a solution produced by dissolving part of the resist in the solvent while the removing nozzles 30 are moved along side edges of the substrate M and the approach stage 20 disposed close to the substrate M. Thus, the removing nozzles 30 jet the solvent uniformly over the edge parts and corners of the substrate M and suck the solution without changing modes of jetting the solvent and sucking the solution.

Abstract: An apparatus for etching a substrate includes (a) a nozzle system including at least one nozzle through which acid solution containing at least hydrofluoric acid is sprayed onto the substrate, (b) a mover which moves at least one of the nozzle system and the substrate relative to the other in a predetermined direction in such a condition that the substrate and the nozzle system face each other, (c) a filter system which filters off particles out of the acid solution having been sprayed onto the substrate, and (d) a circulation system which circulates the acid solution having been sprayed onto the substrate, to the filter system, and further, to the nozzle system from the filter system.

Abstract: Provided is a fabrication method of a semiconductor device having an improved production yield. An insulating film for forming sidewall insulating films of a gate electrode is deposited on the main surface of a semiconductor wafer and then, subjected to the treatment for equalizing the film thickness distribution. In this treatment, the semiconductor wafer is fixed onto a spin stage of an etching apparatus and rotated; and an etchant is supplied from an etchant nozzle to the main surface of the rotating semiconductor wafer while moving thereabove the etchant nozzle from the peripheral side to the central side on the main surface of the semiconductor wafer. The moving speed of the etchant nozzle is controlled, depending on the thickness distribution of the insulating film and is made lower in a region where a change rate of the thickness of the insulating film in a radial direction of the semiconductor wafer is large than in a region where the change rate is small.

Abstract: A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, in which a mask is kept at a defined short distance to the wafer-shaped article such that liquid can be retained between the mask and the defined area of the wafer-shaped article by capillary forces.

Abstract: Disclosed is a liquid processing apparatus to perform liquid processing by supplying a processing liquid from a nozzle formed on an irrotational member to a substrate while the substrate is rotated horizontally in a state where a back surface of the substrate faces downward. The liquid processing apparatus prevents droplets from remaining on the member. The liquid processing apparatus includes a nozzle member irrotationally provided below the substrate. The nozzle member includes a processing-liquid discharge nozzle to discharge the processing liquid and a gas discharge nozzle to discharge drying gas on a top surface of the nozzle member. The processing-liquid discharge nozzle includes a processing-liquid discharge port to discharge the processing liquid toward the substrate.

Abstract: Disclosed is a substrate processing apparatus to improve the etching uniformity when a back surface of a substrate is etched with a high-temperature chemical liquid. The chemical-liquid processing apparatus removes a film formed on a substrate by etching with a high-temperature chemical liquid. The apparatus includes a substrate holding mechanism to hold the substrate horizontally in a state where a back surface of the substrate faces downward, a rotating mechanism to rotate the substrate holding mechanism by a hollow rotating shaft extending vertically, a chemical-liquid discharge nozzle to supply the high-temperature chemical liquid to the back surface of the substrate by discharging the high-temperature chemical liquid upwardly, and a chemical-liquid supply mechanism to supply the chemical liquid to the chemical-liquid discharge nozzle.

Abstract: The present invention is related to a method of two-step backside-etching. First, a substrate with a plurality of hard masks is provided. Next, the back and the edge of the substrate are backside-etched to remove parts of the hard masks on the back and the edge of the substrate. Then, the hard masks and the substrate are patterned in sequence to form a plurality of trenches in the substrate. Finally, before performing a wet bath step, the edge of the substrate is backside-etched to remove needle structures on the edge of the substrate.

Abstract: The present invention is directed to processes for ink jet printing of etchant or modifier materials for creating patterns, particularly for electronics and display applications. The present invention also relates to devices made using the processes.

Abstract: A method of removing materials, and preferably photoresist, from a substrate comprises dispensing a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the material coated substrate. The substrate is preferably heated to a temperature of at least about 90° C., either before, during or after dispensing of the liquid sulfuric acid composition. After the substrate is at a temperature of at least about 90° C., the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate is then preferably rinsed to remove the material.

Abstract: A substrate treating apparatus for performing a predetermined treatment of substrates with a treating liquid. The apparatus includes a treating tank for storing the treating liquid; a lifter having holding elements for holding the substrates, and vertically movable between a standby position above the treating tank and a treating position inside the treating tank; lower nozzles arranged on opposite sides at a bottom of the treating tank for supplying the treating liquid; upper nozzles arranged above the lower nozzles for supplying the treating liquid toward the holding elements of the lifter; and a control device for controlling a flow ratio of the treating liquid between the upper nozzles and the lower nozzles according to the treatment.

Abstract: A processing system includes a plurality of chucks, each of the chucks configured to support a substrate such that a bottom surface of the substrate is exposed, a track configured to guide the plurality of chucks along a continuous path, and a processing arrangement configured to process the bottom surface of each substrate when the track guides the respective chuck over the processing arrangement, the processing arrangement including a fluid meniscus arranged to contact the bottom surface of each substrate when the track guides the respective chuck over the processing arrangement.

Abstract: Systems, devices and methods of measuring a flow of a liquid stream for a semiconductor process are provided. The liquid stream is delivered through a liquid delivery nozzle. The nozzle is adapted to deliver the liquid stream for the semiconductor process. The free stream extends from an upstream location near the nozzle to a downstream location. The stream is marked at the upstream location and measured at the downstream location to determine the flow.

Abstract: Disclosed are a method and apparatus for etching disk-shaped members, especially a method and apparatus for etching semiconductor wafers. In a method wherein wafers (30) are rotated and etched in an etching chamber (12) which is filled with an etching solution, a non-rotating cell plate (26) is disposed between two rotating wafers (30). In an etching apparatus wherein multiple wafers (30) are supported and rotated by a rod (16), the cell plate (26) is disposed between each two wafers (30). The cell plate (26) has a surface area roughly equivalent to that of the wafer (30).

Abstract: There are provided a spin processing method and a spin processing apparatus with which the improvement of a processing speed in spin processing can be compatible with the saving of a processing solution. The spin processing method comprises holding and fixing the wafer on the upper surface of the spin table, and supplying the processing solution to the surface of the wafer by the predetermined amount while rotating the spin table, to process the surface of the wafer, wherein the processing solution is supplied while the wafer is heated and maintained at the predetermined temperature, to process the wafer. The predetermined temperature for heating the wafer is equal to or higher than 25° C.

Abstract: During the polishing of a wafer 2, the wafer 2 is illuminated with measuring light emitted from a light source 21, and the spectroscopic intensity of the reflected light is detected by a linear sensor 31. The signal processing part 11 monitors the polishing state of the wafer 2 on the basis of detection signals from the sensor 31, and detects the polishing endpoint of the wafer 2. The shutter mechanism control part 14 controls the motor 13b of the shutter mechanism 13 in response to the polishing endpoint detection signal from the signal processing part 11, and causes a light blocking member 13a to advance into the light path of the measuring light, so that the measuring light is blocked with respect to the wafer 2. As a result, the effect of the measuring light used for the monitoring of the polishing state on the object of polishing can be reduced.

Abstract: A method for glass-blowing on a microscopic level includes the steps of defining a plurality of microholes in a wafer, disposing a sheet of thermally formable material onto the wafer covering the microholes, heating the sheet of thermally formable material until a predetermined degree of plasticity is achieved, applying self-induced fluidic pressure by expansion of the heated trapped gas in the microholes to the sheet of thermally formable material, while the sheet is still plastic, and simultaneously forming a plurality of blown micro-objects in the sheet on the wafer by means of continued application of pressure for a predetermined time.

Abstract: A method for polishing a wafer comprising an aqueous solution having a pH in the range of 6 to 8, wherein the aqueous solution comprises at least one compound selected from the group consisting of a polymethacrylic acid, a polysulfonic acid, and combinations thereof, and wherein the compound is present in the range of 1.5 to 4 percent by weight of the aqueous solution. The wafer polishing solution can be adjusted to control cut rate and selectivity for modifying semiconductor wafers using a fixed abrasive CMP process.

Abstract: Silicon (12) is etched through a mask (11) comprising a layer of organic resin material (such as novolac) through which openings (32) are formed in the areas to be etched. The layer of organic resin is first deposited over a free surface of the device to be etched. The openings (32) are then formed by depositing droplets of a caustic etchant such as sodium hydroxide (NaOH) or potassium hydroxide (KOH) with an inkjet printer. The etchant reacts with the resin to expose the silicon surface in areas to be etched. The etching of the silicon surface is performed by applying a dilute solution of hydrofluoric acid (HF) and potassium permanganate (KMnO4) to the exposed surface through the openings in the mask to etch the silicon to a desired depth (83).

Abstract: Provided is a fabrication method of a semiconductor device having an improved production yield. An insulating film for forming sidewall insulating films of a gate electrode is deposited on the main surface of a semiconductor wafer and then, subjected to the treatment for equalizing the film thickness distribution. In this treatment, the semiconductor wafer is fixed onto a spin stage of an etching apparatus and rotated; and an etchant is supplied from an etchant nozzle to the main surface of the rotating semiconductor wafer while moving thereabove the etchant nozzle from the peripheral side to the central side on the main surface of the semiconductor wafer. The moving speed of the etchant nozzle is controlled, depending on the thickness distribution of the insulating film and is made lower in a region where a change rate of the thickness of the insulating film in a radial direction of the semiconductor wafer is large than in a region where the change rate is small.

Abstract: An etchant for copper and copper alloys, includes an aqueous solution containing: 14 to 155 g/liter of cupric ion source in terms of a concentration of copper ions; 7 to 180 g/liter of hydrochloric acid; and 0.1 to 50 g/liter of azole, the azole including nitrogen atoms only as heteroatoms residing in a ring. A method for producing a wiring by etching of copper or copper alloys, includes the step of: etching a portion of a copper layer on an electrical insulative member that is not covered with an etching resist using the above-described etchant so as to form the wiring. Thereby, a fine and dense wiring pattern with reduced undercut can be formed.

Abstract: The invention concerns a method of wet chemical etching of a wafer comprising at least one surface layer of silicon-germanium (SiGe) for etching by dispensing an etching solution deposited on a rotating wafer, the method being characterized in that it comprises a first etching step in which said etching solution is dispensed from a fixed position located at a predetermined distance from the center of the wafer, and a second etching step in which the etching solution is dispensed radially from the center of the wafer and over a maximum distance which is less than the radius of said wafer.

Abstract: A self-cleaning colloidal slurry and process for finishing a surface of a glass, ceramic, glass-ceramic, metal or alloy substrate for use in a data storage device, for example. The slurry comprises a carrying fluid, colloidal particles, etchant, and a surfactant adsorbed and/or precipitated onto a surface of the colloidal particles and/or substrate. The surfactant has a hydrophobic section that forms a steric hindrance barrier and substantially prevents contaminates, including colloidal particles, from bonding to the substrate surface. The slurry is applied to the surface of the substrate while a pad mechanically rubs the surface. Subsequent cleaning with standard soap solutions removes substantially all remaining contamination from the substrate surface. In an exemplary embodiment, the slurry is used to superfinish a glass disk substrate to a surface roughness of less than 2 ?, with substantially no surface contamination as seen by atomic force microscopy (AFM) after standard soap cleaning steps.

Abstract: The present invention provides a method of forming a circuit pattern on an integrally bonded member, the method not requiring a correction step of a laminate film or a resist film which has been necessary at the time of wet treatment of the integrally bonded member. After a circuit pattern forming metal plate 13 is bonded on a part of a ceramic substrate 12 so as to expose an outer peripheral edge portion of the ceramic substrate 12 in an integrally bonded member 10, the integrally bonded member 10 is set on a treating apparatus 30 while being covered with a masking member 20 having a window portion 22 from which the circuit pattern forming metal plate 13 of the integrally bonded member 10 is exposed.

Abstract: An first example method and apparatus for etching and cleaning a substrate comprises device with a first manifold and a second manifold. The first manifold has a plurality of nozzles for dispensing chemicals onto the substrate. The second manifold is attached to a vacuum source and/or a dry air/gas source. A second example embodiment is a wafer cleaning device and method that uses a manifold with capillary jet nozzles and a liquid capillary jet stream to clean substrates.

Abstract: A process and method for compensating for a radial non-uniformity on a wafer that includes the steps of: centering a rotational thickness non-uniformity of a film on the wafer about the axis of the spin susceptor following a CMP process; positioning a nozzle in the spin processing unit to direct the etching solution along a radius of the wafer; adjusting the flow of the etching solution from the nozzle; adjusting the rotational speed of the spin susceptor to control the residence time of the etching solution; and coordinating the rotational speed of the spin susceptor, flow of etching solution and positioning of the nozzle to maximize the removal of material. The process may be utilized to compensate for the bowl-shaped non-uniformities of an STI oxide. These non-uniformities are compensated for and addressed after a CMP process.

Abstract: A wet etching apparatus and method to shorten processing time and to eliminate formation of unintended mask pattern are described. In the conventional art, after a mask pattern is formed, alien substances such as water mist or stain are left on the substrate. The alien substances act as an etching block in the wet etching process. This generates an unintended mask pattern. The present invention uses ultraviolet light to remove the alien substances prior to the etching process. When the alien substances are removed, the intended mask pattern is generated after the etching process. The wet etching device according to the present invention includes an ultraviolet cleaner and a conveyor to convey substrates to and from the ultraviolet cleaner. Spaces for the ultraviolet cleaner and the conveyor are created in the wet etching apparatus by reducing space for cassettes and reducing space required by the loader.

Abstract: An etching apparatus and an etching method, wherein pressure exerted on a substrate is minimized, and an entire surface of the substrate is uniformly pressed during an etching process. The breakage of the substrate is prevented, and the substrate is uniformly etched. Accordingly, the thickness of the substrate may be reduced.

Abstract: The invention relates to a process including a chemical liquid treatment and a rinse liquid treatment on a substrate, more particularly to a technique for reducing consumption of a chemical liquid while achieving uniform process and preventing particle generation. In a specific embodiment, the process is performed for removing a silicon oxide film formed on a silicon wafer. The process includes three subsequently performed steps, in which (1) diluted hydrofluoric acid (DHF), (2) DHF and de-ionized water (DIW), (3) DIW are supplied, respectively, onto a rotating wafer. Transition from step (1) to step (2) is done immediately before the hydrophilic silicon oxide film is dissolved to expose the underlying hydrophobic silicon layer.

Abstract: A combined wet etching method for stacked films which is capable of performing etching processes in a collective manner while controlling an amount of side-etching on each of stacked films and of making uniform side edges. In the wet etching method, two or more types of etching methods are performed in combination, on stacked films containing first and second films being deposited sequentially on a substrate and each having a different film property. The two or more types of wet etching methods include, at least, a first wet etching method in which side-etching on the first film is facilitated more than side-etching on the second film and a second wet etching method in which side-etching on the second film is facilitated more than side-etching on the first film.

Abstract: The present invention provides a method of fabricating an imprint mold for molding a structure. The method includes directing a first and a second flux for forming a first material and a second material, respectively, to a substrate to form a layered structure having alternating layers of the first and the second material. The method also includes controlling a thickness of the first and the second layers by controlling the first and the second flux and cleaving the layered structure to form a cleavage face in which sections of the layers are exposed. The method further includes etching the exposed sections of the layers using a etch procedure that predominantly etches one of the first and the second materials to form the mold having an imprinting surface with at least one indentation for molding the structure. At least one of the fluxes is controlled so that at least one of the layers has a thickness that varies along a portion of a length of the at least one layer.

Abstract: The invention relates to a method for the treatment of disk-like objects with one first liquid and at least one second liquid at least in a defined edge region of a disk-like object.

Abstract: A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and, optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.

Abstract: An etching method and etching device are provided, enabling uniform rendering of the thickness of a film for processing on a wafer regardless of the film thickness profile thereof, and thereby enabling global planarizing of the wafer surface. In an etching method, the film thickness profile of the film for processing formed on the wafer is ascertained in advance, and wet etching is performed by discharging an etchant liquid L1 at a thick portion of the film for processing; simultaneously with the discharge of the etchant liquid L1, a diluting liquid L2 for the etchant liquid L1 is discharged at a thin portion of the film for processing.

Abstract: The present invention provides an optical microbench having intersecting structures etched into a substrate. In particular, microbenches in accordance with the present invention include structures having a planar surfaces formed along selected crystallographic planes of a single crystal substrate. Two of the structures provided are an etch-stop pit and an anisotropically etched feature disposed adjacent the etch-stop pit. At the point of intersection between the etch-stop pit and the anisotropically etched feature the orientation of the crystallographic planes is maintained. The present invention also provides a method for micromachining a substrate to form an optical microbench. The method comprises the steps of forming an etch-stop pit and forming an anisotropically etched feature adjacent the etch-stop pit. The method may also comprise coating the surfaces of the etch-stop pit with an etch-stop layer.

Abstract: The apparatus for quantifying effectiveness of solvent to clean a coating from a substrate using a drip test includes a test stand, a drip test device, and a computer associated with the stand and test device. The test stand is adapted to support a glass panel at a predetermined angle. The drip test device is adapted to deposit solvent-based droplets onto a coated surface of the glass panel to clean the coated surface. The computer optically scans the glass panel and to determine cleanliness after a drip test is conducted. The method includes conducting a drip test on a coated glass panel, placing a template behind the glass panel, optically scanning the glass panel and template into a computer, and evaluating the glass panel for cleanliness based on the scanned image of the glass panel and template.

Abstract: Planarizing machines, carrier heads for planarizing machines and methods for planarizing microelectronic-device substrate assemblies in mechanical or chemical-mechanical planarizing processes. In one embodiment of the invention, a carrier head includes a backing plate, a bladder attached to the backing plate, and a retaining ring extending around the backing plate. The backing plate has a perimeter edge, a first surface, and a second surface opposite the first surface. The second surface of the backing plate can have a perimeter region extending inwardly from the perimeter edge and an interior region extending inwardly from the perimeter region. The perimeter region, for example, can have a curved section extending inwardly from the perimeter edge of the backing plate or from a flat rim at the perimeter edge. The curved section can curve toward and/or away from the first surface to influence the edge pressure exerted against the substrate assembly during planarization.