Abstract: Where a thin film formed on a glass substrate is etched with a solution containing a fluoride, insoluble residues formed by the reaction of the solution with glass substrate components adhere to the back of the substrate to cause etching non-uniformity called roller marks. So, a solution is supplied directly to supporting members for supporting the glass substrate, or concentratedly to a region where the substrate and the supporting members come into contact and from a position opposite to the transporting direction of the substrate, or to both the supporting members and regions where the substrate and the supporting members come into contact. This enables the roller marks to be kept from forming, consequently making it possible to improve display quality of display devices.

Abstract: A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.

Abstract: A substrate treatment method for treating a substrate by supplying a treatment liquid to the substrate while rotating the substrate. The method comprises the steps of: performing a first substrate rotation process for rotating the substrate while clamping the substrate by a first clamping member set; performing a second substrate rotation process after the first substrate rotation step for rotating the substrate while clamping the substrate by the first clamping member set and a second clamping member set provided separately from the first clamping member set; and performing a third substrate rotation process after the second substrate rotation step by unclamping the substrate from the first clamping member set for rotating the substrate while clamping the substrate by the second clamping member set.

Abstract: A wafer chuck includes alignment members that allows a semiconductor wafer to be properly aligned on the chuck without using a separate alignment stage. The alignment members may be cams, for example, attached to arms of the wafer chuck. These members may assume an alignment position when a robot arm places the wafer on the chuck. In this position, they guide the wafer into a proper alignment position with respect to the chuck. During rotation at a particular rotational speed, the alignment members move away from the wafer to allow liquid etchant to flow over the entire edge region of the wafer. At still higher rotational speeds, the wafer is clamped into position to prevent it from flying off the chuck. A clamping cam or other device (such as the alignment member itself) may provide the clamping.

Abstract: A method comprises depositing an organic material on a substrate; depositing additional material different from the organic material after depositing the organic material; and removing the organic material with a compressed fluid. Also disclosed is a method comprising: providing an organic layer on a substrate; after providing the organic layer, providing one or more layers of a material different than the organic material of the organic layer; removing the organic layer with a compressed fluid; and providing an anti-stiction agent with a compressed fluid to material remaining after removal of the organic layer.

Abstract: A system and method for at least partially demetallizing a metallized film that has a metallized side and an opposite support side.

Abstract: An apparatus for manufacturing semiconductor devices includes a supporter portion on which a semiconductor substrate is placed, a nozzle portion for injecting a fluid to an edge of the substrate placed on the supporter portion, a shielding cover for preventing the fluid injected from the nozzle portion from flowing to a shielding portion among a pattern-formed portion, and a shielding cover moving portion device for moving the shielding cover up and down. The apparatus makes it possible to prevent a chemical solution injected to the edge of a wafer from flowing to a shielding portion of the wafer when the wafer edge is etched.

Abstract: A scrubber device is provided. The scrubber device may etch a backside of a wafer and may clean a frontside of the wafer simultaneously. The scrubber device may comprise a programmed controller adapted to supply a non-etching fluid to a frontside of the wafer whenever an etching fluid is supplied to the backside of the wafer.

Abstract: A novel modular muffle etch injector assembly for use in a gas blanketed down-flow chemical vapor deposition apparatus of the type having a muffle and a modular gas injector assembly for introducing chemical vapors into a deposition chamber, the muffle being adapted for receiving and supporting the gas injector assembly, wherein deposition material residue collects on a lower surface of the muffle. The etch injector assembly of the present invention comprises an etch chamber having vertical sidewalls, a closed top end and an open bottom end, a supply mechanism for introducing a liquid etchant into the etch chamber, and a sealing device disposed along the open end of the etch chamber for providing a seal between the etch chamber and the lower surface of the muffle to confine the etchant to the etch chamber. The etch injector assembly preferably also includes an exhaust means for removing chemical vapors from the etch chamber.

Abstract: The present invention provides an edge cleaning system and method in which a directed stream of a mild etching solution is supplied to an edge area of a rotating workpiece, including the front surface edge and bevel, while a potential difference between the workpiece and the directed stream is maintained. In one aspect, the present invention provides an edge cleaning system that is disposed in the same processing chamber that is used for deposition or removal processing of the workpiece. In another aspect, the mild etching solution used for edge removal is also used to clean the front surface of the wafer, either simultaneously with or sequentially with the edge removal process.

Abstract: A substrate having a film to be etched is held on a rotating stage. While rotating the substrate, a chemical solution containing an etchant is supplied onto the substrate from a nozzle. A lamp house with a drive unit is positioned so that the distance between the substrate and a glass window of the lamp house becomes 2 to 5 mm, the lamp house accommodating a lamp generating ultraviolet light. The ultraviolet light irradiates the film through the chemical solution. The ultraviolet light has a higher energy than the binding energy of constituent molecules of the film.

Abstract: Planarizing machines, carrier heads for planarizing machines and methods for planarizing microelectronic-device substrate assemblies in mechanical or chemical-mechanical planarizing processes. In one embodiment of the invention, a carrier head includes a backing plate, a bladder attached to the backing plate, and a retaining ring extending around the backing plate. The backing plate has a perimeter edge, a first surface, and a second surface opposite the first surface. The second surface of the backing plate can have a perimeter region extending inwardly from the perimeter edge and an interior region extending inwardly from the perimeter region. The perimeter region, for example, can have a curved section extending inwardly from the perimeter edge of the backing plate or from a flat rim at the perimeter edge. The curved section can curve toward and/or away from the first surface to influence the edge pressure exerted against the substrate assembly during planarization.

Abstract: A method to redistribute solid copper deposited by PVD on a wafer topography. The deposited copper is solubilized in a fluid for redistribution. The copper redistribution prevents inherent nonuniformity of the deposited copper film thickness by improving the uniformity of thickness of the copper film on the covered surfaces, such as vertical and bottom surfaces. The method provides the advantages of good adhesion and good grain growth and orientation that are achieved with copper deposited by PVD, and also provides the good step coverage as achieved with copper deposited by CVD.

Abstract: This invention relates to methods for regenerating spent DNA detection chips for further use. Specifically, this invention relates to a method for removal of silver from used DNA detection chips that employ gold nanoparticle-oligonucleotide conjugate probes and that use silver staining for signal amplification.

Abstract: An apparatus and a method for etching insulating film prevents generation of spots by spraying etchant on a lower surface of the substrate as well as the upper surface.

Abstract: A chemical-mechanical jet etching method rapidly removes large amounts of material in wafer thinning, or produces large-scale features on a silicon wafer, gallium arsenide substrate, or similar flat semiconductor workpiece, at etch rates in the range of 10-100 microns of workpiece thickness per minute. A nozzle or array of nozzles, optionally including a dual-orifice nozzle, delivers a high-pressure jet of machining etchant fluid to the surface of the workpiece. The machining etchant comprises a liquid or gas, carrying particulate material. The liquid may be a chemical etchant, or a solvent for a chemical etchant, if desired. The areas which are not to be etched may be shielded from the jet by a patterned mask, or the jet may be directed at areas from which material is to be removed, as in wafer thinning or direct writing, depending on the size of the desired feature or etched area.

Abstract: A method is described for local etching of surfaces. The method includes the steps of providing a surface, providing an etchant, and providing a device for supplying and extracting the etchant. The device contains two cylindrical lines of different cross-sectional areas, of which the cylindrical line with the smaller cross-sectional area is guided inside the cylindrical line with the larger cross-sectional area. An etchant is fed through the inner line to the region of the semiconductor wafer that is to be etched, and the etchant that spreads out beyond the region of the surface that is to be etched is extracted through the outer line. The cross-sectional area of the outer line is less than or equal to the area of the region of the surface which is to be etched.

Abstract: An object of the present invention is to provide a wafer cleaning apparatus for cleaning wafers that have received various processing such as copper plating and chemical mechanical polishing. An apparatus for cleaning front and back surfaces of a wafer with solution while rotating the wafer that has been subjected to a fabrication process is disclosed. The apparatus comprises cleaning nozzles for spraying a cleaning solution, respectively, onto a front surface of the wafer that has been processed and onto a back surface thereof and also comprises an etching nozzle for spraying an etching solution onto a vicinity of the outer periphery of the wafer.

Abstract: There is provided a grating fabrication device and method to form gratings on a semiconductor substrate. The substrate is loaded into a reactor filled with an etchant solution, and an array of parallel light of interference light with different periods is projected onto the substrate to etch the portion of the substrate that is exposed to the light via an oxidation-reduction reaction. At the same time, the inclination angle of the substrate is selectively varied to obtain the different grating periods.

Abstract: The present invention relates to a nanospray emitter including an emitter body which includes a fluid inlet, an outlet orifice, and a passage communicating between the fluid inlet and outlet orifice; and an electrically conductive polymer coating on at least a portion of the emitter body. Also disclosed are a nano-electrospray device including the nanospray emitter of the present invention, a method for making a nanospray emitter of the present invention, a method of forming a nanospray using the nanospray emitter of the present invention, and a method of analyzing a solution using the nanospray emitter of the present invention.

Abstract: An integrated semiconductor substrate bevel cleaning system that enables transfer of substrates through the bevel cleaner either with or without substrate processing within the bevel cleaner. The invention provides an integrated bevel cleaning apparatus comprising a transfer position, a rinsing position and an etching position.

Abstract: A method and an apparatus for removing coating layers from the top of alignment marks on a wafer situated in a spin processor are described. The method may be carried out by first providing a spin process equipped with a rotatable wafer pedestal, then providing a wafer that has at least one alignment mark covered by a coating layer, mounting an edge ring on an outer periphery of the wafer pedestal, the edge ring has at least one tab section extending outwardly from an inner periphery of the edge ring, then positioning the wafer faced down and supported by an inert gas flow on the edge ring such that a narrow gap is formed between the tab section on the edge ring and the alignment marks and dispensing an etchant onto a backside of the wafer while rotating.

Abstract: This invention provides a process for treating a workpiece having a front side, a back side, and an outer perimeter. In accordance with the process, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides or the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece as the workpiece and corresponding reactor are spinning about an axis of rotation that is generally orthogonal to the center of the face of the workpiece being processed. The flow rate of the one or more processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

Abstract: The invention relates to a method of manufacturing non-slip floor coverings made of mineral materials, such as, for example, natural stone, fine stoneware, artificial stone or ceramics. This method is carried out in a two-stage process, there being produced on the surface of the floor coverings or slabs, in a first process stage by means of pulsed laser bombardment, statistically distributed microcraters invisible to the human eye. The surface of the floor coverings or slabs obtained in this way is then, according to the invention, subjected to hydromechanical aftertreatment.

Abstract: Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems apply liquid etchant in a precise manner at the edge bevel region of the wafer under viscous flow conditions, so that the etchant is applied on to the front edge area and flows over the side edge and onto the back edge in a viscous manner. The etchant thus does not flow or splatter onto the active circuit region of the wafer. An edge bevel removal embodiment involving that is particularly effective at obviating streaking, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.

Abstract: A method of planarizing a wafer surface of a semiconductor wafer having an elevated portion extending therefrom is described. The method includes the step of positioning a fluid flow surface relative to the wafer surface so that (i) a space is defined between the wafer surface and the fluid flow surface, and (ii) the elevated portion of the semiconductor wafer is positioned in the space. The method also includes the step of advancing a fluid within the space so that the fluid contacts and erodes the elevated portion of the semiconductor wafer. An associated apparatus for planarizing a wafer surface of a semiconductor wafer having an elevated portion extending therefrom is also described.

Abstract: An apparatus and method for modifying the surface of an object by contacting said surface with a liquid processing solution using the liquid applicator geometry and Marangoni effect (surface tension gradient-driven flow) to define and confine the dimensions of the wetted zone on said object surface. In particular, the method and apparatus involve contouring or figuring the surface of an object using an etchant solution as the wetting fluid and using realtime metrology (e.g. interferometry) to control the placement and dwell time of this wetted zone locally on the surface of said object, thereby removing material from the surface of the object in a controlled manner. One demonstrated manifestation is in the deterministic optical figuring of thin glasses by wet chemical etching using a buffered hydrofluoric acid solution and Marangoni effect.

Abstract: A printed circuit board is produced by patterning a resist layer according to a circuit mask that defines desired circuit paths. The resist pattern layer is formed by removing the resist from the board in the desired circuit paths and a conductive material is plated onto the board in the resist voids defined by the circuit mask so that the height of the conductive material relative to the substrate equals or exceeds the height of the resist layer relative to the substrate. A low-reactive solution is applied over the conductive material and removes a surface portion of the conductive material. As the solution removes the conductive layer, it forms a film barrier and the solution composition changes, both of which substantially inhibits any further removal of the conductive material. Next, the film barrier is removed from the board allowing another film barrier to form stimulating the removal of further conductive material.

Abstract: A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and, optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.

Abstract: A process is described for the manufacture of flexible tubular elements, particularly stents for the medical field, the process comprising the steps of: a) providing a hollow metal tube (or metal coated tube) with an open pattern of a chemical-etch-resistant coating layer; b) supporting the hollow metal tube with a coating thereon onto a chemical etch resistant support element; c) contacting the open pattern with a solution capable of etching the metal of the hollow metal tube so that said metal is etched away from physically exposed surfaces of the metal tube and openings in the metal tube corresponding to the open pattern of the coating layer are created in the metal tube element without etching the chemical etch resistant support element; and d) removing the metal tube from the chemical etch resistant support element.

Abstract: An atomizing injector includes a metering set having a swirl chamber, a spray orifice and one or more feed slots etched in a thin plate. The swirl chamber is etched in a first side of the plate and the spray orifice is etched through a second side to the center of the swirl chamber. Fuel feed slots extend non-radially to the swirl chamber. The injector also includes integral swirler structure. The swirler structure includes a cylindrical air swirler passage, also shaped by etching, through at least one other thin plate. The cylindrical air swirler passage is located in co-axial relation to the spray orifice of the plate of the fuel metering set such that fuel directed through the spray orifice passes through the air swirler passage and swirling air is imparted to the fuel such that the fuel has a swirling component of motion. At least one air feed slot is provided in fluid communication with the air swirler passage and extends in non-radial relation thereto.

Abstract: A chemical-mechanical jet etching method rapidly removes large amounts of material in wafer thinning, or produces large-scale features on a silicon wafer, gallium arsenide substrate, or similar flat semiconductor workpiece, at etch rates in the range of 10-100 microns of workpiece thickness per minute. A nozzle or array of nozzles, optionally including a dual-orifice nozzle, delivers a high-pressure jet of machining etchant fluid to the surface of the workpiece. The machining etchant comprises a liquid or gas, carrying particulate material. The liquid may be a chemical etchant, or a solvent for a chemical etchant, if desired. The areas which are not to be etched may be shielded from the jet by a patterned mask, or the jet may be directed at areas from which material is to be removed, as in wafer thinning or direct writing, depending on the size of the desired feature or etched area.

Abstract: This invention relates to an on-line process for removing copper deposits from the blades of the rotor of a steam turbine in systems, particularly condensing steam turbines. The process comprises adding an oxime to an appropriate injection point of an electric generating power plant powered by a steam turbine, where the power plant comprises a pre-boiler system, a steam generator, a steam turbine, a condenser and an electric generator.

Abstract: A method for moving resist stripper across the surface of a semiconductor substrate. The method includes applying a wet chemical resist stripper, such as an organic or oxidizing wet chemical resist stripper, to at least a portion of a photomask positioned over the semiconductor substrate. A carrier fluid, such as a gas, is then directed toward the semiconductor substrate so as to move the resist stripper across the substrate. The carrier fluid may be directed toward the substrate as the resist stripper is being applied thereto or following application of the resist stripper. A system for effecting the method is also disclosed.

Abstract: The present invention provides a planar clean method applicable to shallow trench isolation (STI) for cleaning a substrate having a STI region formed thereon and a high density plasma (HDP) oxide on the surface of the STI region. A buffer oxide etch cleaning solution is exploited and matched by a planar clean way to let the oxide losses of the surface of the silicon substrate and the STI corners match the height and shape of the HDP oxide in the STI region. Thereby, the phenomenon of wrap rounding at the STI corners, which influences growth of the next thermal oxide, can be avoided. The present invention can prevent the STI corners from generating parasitic device characteristics and enhance electric characteristics of the device.

Abstract: An apparatus for etching a glass substrate 30 includes a first bath 13 containing an etchant, at least one porous panel having a plurality of jet holes 16 in the first bath, the porous panel containing the etchant to jet the etchant against the glass substrate, a container 20 storing the etchant, and a pump 24 supplying the etchant from the container to the porous panel, the pump being connected to the container and the porous panel.

Abstract: A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and, optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.

Abstract: This invention relates to methods for regenerating spent DNA detection chips for further use. Specifically, this invention relates to a method for removal of silver from used DNA detection chips that employ gold nanoparticle-oligonucleotide conjugate probes and that use silver staining for signal amplification.

Abstract: A method and apparatus for dispensing a liquid on the surface of a localized zone of a substrate, for example for cleaning of etching purposes. Along with the liquid, a gaseous tensio-active substance is supplied, which is miscible with said liquid and when mixed with the liquid, reduces the surface tension of said liquid, thus containing the liquid in a local zone of the substrate surface.

Abstract: An etching method and an etching apparatus for applying an etchant containing nitric acid and hydrofluoric acid to silicon to etch the silicon. The etchant used in etching is recovered, and brought into contact with a gas inert to the etchant, whereby the etchant is regenerated. At least a part of the regenerated etchant is reused in etching.

Abstract: An integrated semiconductor substrate bevel cleaning system that enables transfer of substrates through the bevel cleaner either with or without substrate processing within the bevel cleaner. The invention provides an integrated bevel cleaning apparatus comprising a transfer position, a rinsing position and an etching position.

Abstract: A method of manufacturing semiconductor devices is provided for forming a tungsten plug or polysilicon plug and minimizing the step-height of the intermediate insulating layer. An etching composition for this process is also provided as are semiconductor devices manufactured by this process. The method of manufacturing semiconductor devices includes the steps of forming a tungsten film having a certain thickness on an insulating layer and burying contact holes formed in the insulating layer constituting a specific semiconductor structure, and spin-etching the tungsten film using a certain etching composition such that the tungsten film is present only inside the contact holes not existing on the insulating film.

Abstract: In a process for treating a workpiece such as a semiconductor wafer, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides of the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece while the workpiece and a reactor holding the workpiece are spinning. The flow rate of the processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

Abstract: In-laid metallization patterns of copper or a copper alloy are fabricated by a damascene-type process wherein the upper surface of a thick, electroplated copper or copper alloy blanket or overburden layer filling recesses in a substrate surface is subjected to a mask-less, chemically-based differential etching step for partially planarizing/thickness reduction prior to a step of planarization by chemical-mechanical polishing (CMP). The inventive process enables an increase in manufacturing throughput, reduction in cost, and reduction in spent CMP slurry generation.

Abstract: A composition and method of construction and use therefor in chemical-mechanical polishing (“CMP”) of one or more substrate assemblies is described. More particularly, a polishing solution comprising etchant, abrasive particles, and surfactant and methods of mixing to form and to dispense the polishing solution are described. One or more of the etchant, abrasive particles, and/or surfactant may comprise a liquid medium. Etchant, surfactant or abrasive particles may be premixed, mixed in-situ (“point of use mixing”), or any combination thereof. The surfactant may be ionic or nonionic. In particular, a polyoxyethylene may be used, and more particularly, a polyoxyethylene ester or ether may be used.

Abstract: A method and apparatus for dispensing a liquid on the surface of a localized zone of a substrate, for example for cleaning of etching purposes. Along with the liquid, a gaseous tensio-active substance is supplied, which is miscible with said liquid and when mixed with the liquid, reduces the surface tension of said liquid, thus containing the liquid in a local zone of the substrate surface.

Abstract: In a method of processing or drying a semiconductor wafer, the wafer is withdrawn from a fluid bath at an inclined angle, and at a selected withdrawal speed. A solvent vapor is provided at the surface of the bath, to create a surface tension gradient and promote drying, or removal of the fluid from the wafer surface. After the wafer is entirely withdrawn from the rinsing liquid, the wafer is rotated briefly, to remove any remaining fluid via centrifugal force, without the fluid drying on the wafer. The wafer is held onto a rotor assembly which rotates the wafer within an enclosed chamber, and which is also pivoted within the chamber, to position the wafer at the incline angle.

Abstract: A method of eliminating surface roughness of metal lines is disclosed, which can effectively improve the rough edges formed on the surface of the metal lines after wet etching during the manufacturing process of a thin film transistor, so that reliability is increased and current leakage can be avoided. The method includes the steps of: applying a tetra-methyl ammonium hydroxide solution to the rough surface of the metal lines and keeping the metal lines still for a predetermined time; and rinsing the metal lines to remove the tetra-methyl ammonium hydroxide solution left on the surface of the metal lines.

Abstract: This invention relates to a method of forming a substrate with preparing a surface capable of making a cocontinuous bond comprising the steps of 1) obtaining a copper or copper alloy substrate and 2) applying an etching composition which comprises (a) an acid, (b) an oxidizing agent, (c) a copper complexing agent, and (d) a copper complex, wherein the copper complex is present in an amount which precipitates when applied to the copper or copper alloy substrate. The method also includes the step of 3) treating the substrate with a coating composition and/or 4) applying a stripping composition to the substrate. The invention also relates to copper articles, having surface porosity, including multilayer articles such as printed circuit boards and compositions used in the method. The present invention provides microporous copper or copper alloy substrates which have improved adhesion properties to organic material.

Abstract: An ornamental steel plate and a manufacturing method therefor wherein the ornamental steel plate includes a steel plate, a pattern forming groove being formed on the surface of which according to a pattern to be expressed, a pattern forming material having different texture and color from the steel plate and filled in the pattern forming groove, and a decal unit decalled on the surface of the pattern forming material; and the method for manufacturing the ornamental steel plate includes coating an etching resist ink on the surface of the steel plate except for a pattern to be expressed, drying and heating the etching resist ink, forming the pattern forming groove by etching the pattern by spraying an etching solution on the surface of the steel plate, removing the etching resist ink by spraying an etching resist ink remover on the surface of the steel plate, filling the pattern forming material having different texture and color from the steel plate in the pattern forming groove, removing a protruding portion