Abstract: The invention is comprised of an apparatus in form of a single transportable unit, a chamber for the main treatment, with the necessary dimensions to fit the canister drum containing the waste which is to be eliminated, and with the capacity to create and manipulate the direction of the RF plasma flows at a temperature higher than 10.000° K so that it totally surrounds the container, in order to carry out its complete dissociation. The chamber has the capacity to individually collect and select the various materials by species resulting from the dissociation, transporting them by means of the plasma flow generated by an argon gas or other gasses which are injected into the chamber at the far end, where the gas conditioning/separator is situated. This chamber which carries out the main treatment process has embedded antennas which emit the radio frequency which produces and maintains the plasma core and is associated to: a) A robotic unit to load the waste drums/canisters into the main chamber.

Abstract: Apparatus including a chamber and a coil system for converting a field-generating current into a RF magnetic field in the chamber when the chamber contains an ionized gas which interacts with the RF magnetic field to create a plasma. The plasma is contained within a cylindrical region enclosed by the chamber, which region has a longitudinal center axis, and the region is considered to be made up of a plurality of annular zones concentric with the center axis and disposed at respectively different distances from the center axis. The coil system is composed of: a plurality of individual coils each positioned and dimensioned to produce a RF magnetic field which predominantly influences a respective annular zone.

Abstract: A plasma generation system that is capable of generating uniform high-density plasma includes a microwave generator for generating microwaves, a refractor for altering a direction of propagation of the microwaves, and an electromagnetic unit for applying a magnetic field to plasma formed by the microwaves to generate electron cyclotron resonance (ECR).

Abstract: A plasma processing system, method, and computer readable medium for measuring plasma impedance. The system includes a chamber configured to contain a plasma and including a chuck within an interior area of the chamber, the chuck including a support surface and a bottom surface, and a first voltage-current probe positioned at a first position located exterior to the chamber and on a radio-frequency transmission line between the chamber and a power source. The system also includes a simulation module connected to the first voltage-current probe and arranged to solve, based on measurements transmitted from the first voltage-current probe, a radio-frequency model of the radio-frequency transmission line between the first position and a second position located within the chamber.

Abstract: A method and system to obtain a high power density plasma to efficiently generate high concentrations of plasma downstream from one or more plasma sources. A first embodiment of the invention involves a method to provide an improved power density for dissociating one or more gases to create plasma. A second embodiment of the invention involves a method to provide multiple chambers for dissociating one or more gases to create plasma. A third embodiment involves an apparatus using a constriction in a discharge chamber containing one or more gases, to provide an improved power density for dissociating one or more gases to create plasma. A fourth embodiment involves an apparatus using a constriction in multiple discharge chambers containing one or more gases, to provide an improved power density for dissociating one or more gases to create plasma.

Abstract: A plasma processing apparatus includes a first dielectric that is connected to a microwave generating unit, the first dielectric having a section that extends along a surface of a rectangular sample, and that makes an electric field strength distribution of the microwaves generated from the microwave generating unit substantially uniform along the surface of the sample; a slot plate that is provided below the first dielectric and in which a plurality of first slots are formed, the slot plate retaining or further enhancing the uniformity of the electric field strength distribution of the microwaves in the first dielectric; a second dielectric that is provided below the slot plate and that retains or further enhances the uniformity of the electric field strength distribution of the microwaves supplied from the slot plate; and a processing unit that processes the sample using a plasma generated in the reaction vessel by the microwaves.

Abstract: A vacuum-processing method carries out, in a vacuum-processing vessel (4), a process wherein a condition of an interior of the vacuum processing vessel (4) changes as the number of processed objects (W) increases, such as a film-forming process for forming a thin film on a semiconductor wafer (W) by using a process gas in the vacuum processing vessel (4). The vacuum-processing method controls a controlled parameter directly affecting an effect of the process, such as film thickness, so that the controlled parameter is maintained at a target value (rt). The vacuum-processing method determines a model function obeying a change of the condition of the interior of the processing vessel (4), and calculates the target value (rt) of the controlled parameter every time one or a plurality of objects (W) are processed on the basis of a set value (Dt) of a set parameter representing the effect of the process, and the model function.

Abstract: Methods and apparatus for controlling a plasma used for materials processing feature cooperative action of a resonant circuit and a switch unit coupled to a plasma vessel and a power supply. A sensor for acquiring a signal associated with a state of a plasma in the plasma vessel supports closed-loop control of the switch unit. Undesirable plasma states detected by the sensor can be eliminated by closing the switch unit to shunt the resonant circuit.

Abstract: An asymmetrical focus ring varies the flow-field, which aids in normalizing pressure gradients across the wafer being processed, thereby improving the process. Embodiments of the present invention utilize a focus ring that either (1) contains a pattern of through holes that enhances pumping, or (2) does not contain any such pattern.

Abstract: The present invention discloses a method and apparatus for the directed formation of a re-entrant micro-jet formed upon the collapse of a cavitation bubble formed proximate to a work surface placed in a fluid. A mask containing an orifice, placed between the work surface and the cavitation bubble, is utilized to direct the re-entrant micro-jet to the work surface. The cavitation bubble may be formed in the desired location by focusing an energy flow proximate to the mask. The energy flow may be obtained by radiation from laser, x-ray, or electrical discharge sources.

Abstract: A plasma processing apparatus, comprising: at least, a plasma processing chamber for processing therein an object to be processed; antenna means for guiding microwaves into the plasma processing chamber; and a dielectric member disposed between the antenna means and the plasma processing chamber; wherein a surface of the dielectric member facing the inside of the plasma processing chamber has a projecting shape.

Abstract: The present invention discloses a method and apparatus for the directed formation of a re-entrant micro-jet formed upon the collapse of a working cavitation bubble formed proximate to a work surface. A target bubble, formed between the work surface and the working cavitation bubble, is utilized to direct the re-entrant micro-jet to the work surface.

Abstract: The invention relates to a method of treatment, in particular cleaning and/or heating, for a metal substrate (1) fed in a substantially continuous manner through a vacuum chamber (3), having a treatment zone in which an electric discharge (10), i.e. a plasma, and a magnetic field are produced in a gas maintained at a pressure below atmospheric pressure between at least the substrate (1), acting as an electrode, and at least one counter-electrode (9) to enable the substrate (1) to be bombarded by the ions produced in the electric discharge (10). This method is characterised in that a confining magnetic induction field is produced entirely around the substrate (1) in the treatment zone so that the electric discharge (10) is also confined entirely around the substrate (1) inside this treatment zone by the confinement of electrons released in the electric discharge (10).

Abstract: In one aspect of the invention is a method to create a vacuum seal with extended lifetime to form a dielectric break in a vacuum chamber. The method includes the use of an elastic dielectric seal to form a high vacuum seal. It also includes the use of different means to protect the vacuum seal from direct exposure to the plasma and to reactive gases present inside the plasma chamber. Furthermore, it includes the use of elements to ensure a proper compression of the elastic seal, and to avoid its expansion or contraction when the pressures on both sides of the seal are different.

Abstract: A material processing apparatus having an integrated toroidal plasma source is described. The material processing apparatus includes a plasma chamber that comprises a portion of an outer surface of a process chamber. A transformer having a magnetic core surrounds a portion of the plasma chamber. The transformer has a primary winding. A solid state AC switching power supply comprising one or more switching semiconductor devices is coupled to a voltage supply and has an output that is coupled to the primary winding. The solid state AC switching power supply drives an AC current in the primary winding that induces an AC potential inside the chamber that directly forms a toroidal plasma that completes a secondary circuit of the transformer and dissociates the gas.

Abstract: An article comprises a heat source, a heat sink, and a high-efficiency diamond material interposed between and thermally coupled to the heat source and the heat sink. The heat source and the high-efficiency diamond material have a contact area greater than 1 square centimeter.

Abstract: A batch-type etching method includes applying microwaves from the outside of a reaction chamber to semiconductor wafers after HF gas etching of the wafers to remove residual substances including H2O, CH3OH, CH3COOH and/or other by-products from surfaces of the wafers. Microwaves oscillate polar molecules of the substances and generate heat, thereby removing the substances.

Abstract: A fast pulsed nonthermal plasma reactor includes a discharge cell and a charging assembly electrically connected thereto. The charging assembly provides plural high voltage pulses to the discharge cell. Each pulse has a rise time between one and ten nanoseconds and a duration of three to twenty nanoseconds. The pulses create nonthermal plasma discharge within the discharge cell. Accordingly, the nonthermal plasma discharge can be used to remove pollutants from gases or break the gases into smaller molecules so that they can be more efficiently combusted.

Abstract: A plasma processing method includes exhausting the interior of a vacuum chamber while supplying gas into the vacuum chamber, and while maintaining the interior of the chamber at a desired pressure. A high-frequency power of 100 kHz to 100 MHz is applied to a coil provided in the vicinity of a dielectric window provided so as to face a substrate placed on a substrate electrode in the vacuum Thus, plasma is generated in the vacuum chamber to process the substrate or a film on the substrate by the generated plasma while particles which tend to move straight from a surface of the substrate or from a surface of the film on the substrate toward a wall surface of the dielectric window inside the vacuum chamber are kept interrupted by a metal plate.

Abstract: A wafer stage for use in a wafer processing apparatus having a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate as attached onto the liquid cooling jacket and having therein a heater and an electrode for an electrostatic chuck. The wafer stage enables performance of wafer processing while letting a wafer be mounted on the ceramic plate. The liquid cooling jacket enables attachment of the ceramic plate through a gap for circulation of a coolant gas as formed over the liquid cooling jacket, and a heat resistant seal material containing therein an elastic body for sealing the coolant gas between the liquid cooling jacket and the ceramic plate.

Abstract: A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.

Abstract: Method and an apparatus for igniting plasma in a semiconductor manufacturing apparatus are disclosed. An example plasma ignition method and apparatus sets a predetermined pressure, source power and bias power of a chamber and flows a predetermined flow rate of CHF3 and Ar gases into the chamber, introduces a predetermined flow rate of Cl2 gas into the chamber, completes the supply of Cl2 gas, and ignites plasma.

Abstract: The present invention uses as a detector for adjustment measurement, monodyne interference between a microwave for plasma generation and the reflected wave. Analysis of the interference wave that is obtained using monodyne interference allows finding of the phase difference between the incident and the reflected wave and the amplitude of that reflected wave; and controlling of an excited microwave generation/control system based on them allows impedance matching between the excited microwave and the plasma. This method allows very high precision phase detection, and calculation of the characteristics of the plasma based on the detected phase shift. Therefore, it is possible to distinguish noises even in the vicinity of the matched region.

Abstract: A method for improving the edge-to-center photoresist ash rate uniformity in lower temperature (typically, but not limited to <100° C.) processing of integrated circuits and micro-electro-mechanical devices. A varying gap distance 32 from the edge-to-center of the upper and lower grid plates, 30 and 31, of a plasma ashing machine is provided to allow additional flow of plasma gases into the normally semi-stagnated area near the center of the wafer being processed. This improvement overcomes the problem of slower photoresist removal in the center of the wafer. Three configurations of the invention is described, including both stepwise and continuous variation of the grid plate gap spacing and optionally, the variation of the size of grid plate holes in a parallel grid plate assembly.

Abstract: In order to more accurately control the radiation characteristics of microwaves to improve the controllability of processing in radial and circumferential directions of an article, there are disclosed a microwave applicator and a plasma processing apparatus using the applicator, which comprise a circular waveguide having a surface provided with a plurality of slots for radiating microwaves, wherein the centers of the plurality of slots are offset in a direction parallel to the surface with respect to the center of the circular waveguide.

Abstract: The invention is a plasma-generating device useful in a wide variety of industrial processes. The plasma is formed in a chamber having a toroidal topology, and is heated inductively. As with all inductive plasmas, a primary coil carries an applied AC current, which, in turn, generates a corresponding applied AC magnetic flux inside the plasma. This flux induces current to flow through the plasma in closed paths that encircle the flux, thereby heating and maintaining the plasma. In this invention, the applied AC current flows through the primary coil around substantially the short poloidal direction on the torus. Accordingly, the applied magnetic flux is caused to circulate through the plasma along the larger toroidal direction. Finally, the current induced within the plasma will flow in the poloidal direction, anti-parallel to the applied primary current.

Abstract: A plasma processing apparatus includes a processing container 53, a mounting table 61 arranged in the processing container 53 to support a wafer W, a sealing plate 55 opposed to the wafer W supported by the mounting table 61, an annular antenna 73 arranged on the sealing plate 55 and consisting of an annular waveguide to introduce a microwave into the processing container 53 through the sealing plate 55, the annular antenna 73 being arranged so that a plane containing an annular waveguide path defined by the annular waveguide is generally parallel with the sealing plate 55, a directional coupler 79 arranged on the periphery of the annular antenna 73, a propagation waveguide 81 connected to the directional coupler 79 and a microwave oscillator 83 connected to the propagation waveguide 81. Accordingly, it is possible to form an uniform microwave in the antenna, so that an uniform plasma can be produced in the processing container.

Abstract: In accordance with one aspect of the invention, a plasma reactor has a capacitive electrode driven by an RF power source, and the electrode capacitance is matched at the desired plasma density and RF source frequency to the negative capacitance of the plasma, to provide an electrode plasma resonance supportive of a broad process window within which the plasma may be sustained.

Abstract: When determining the presence of foreign particles in a processing chamber by radiating a laser beam inside a processing chamber and detecting scattered light from foreign particles within the processing chamber, the detection of scattered light is performed using a detecting lens having a wide field angle and deep focal depth. Accordingly, the detection of foreign particles floating in the processing chamber can be performed across a wide range, and with uniform sensitivity, with a detecting optical system having a simple constitution.

Abstract: The temperature of a plasma chamber of a semiconductor fabrication tool is maintained substantially constant utilizing a variety of techniques, separately or in combination. One technique is to provide the exterior surface of the plasma chamber dome with a plurality of fins projecting into high velocity regions of an overlying airflow in order to dissipate heat from the chamber. Ducting defined by cover overlying the exposed exterior surface of the dome may also feature projecting lips or an airfoil to place high velocity components of the airflow into contact within the exterior dome surface and the fins. Other techniques include employing a high speed fan to control airflow circulation, and the use of temperature sensors in communication the fan through a processor to control fan speed and thereby regulate chamber temperature.

Abstract: A placement stage (24) on which a semiconductor wafer (W) is place is provided within a processing container (22). A microwave is generated by a microwave generator (76), and the microwave is introduced into a process container (22) through a flat antenna member (66). The flat antenna member (66) has a plurality of slots (84) arranged along a plurality of circumferences, and the plurality of circumferences are non-concentric to each other. A distribution of plasma density in the flat antenna member (66) in a radial direction is uniform.

Abstract: Apparatus for dissociating gases includes a plasma chamber comprising a gas. A first transformer having a first magnetic core surrounds a first portion of the plasma chamber and has a first primary winding. A second transformer having a second magnetic core surrounds a second portion of the plasma chamber and has a second primary winding. A first solid state AC switching power supply including one or more switching semiconductor devices is coupled to a first voltage supply and has a first output that is coupled to the first primary winding. A second solid state AC switching power supply including one or more switching semiconductor devices is coupled to a second voltage supply and has a second output that is coupled to the second primary winding. The first solid state AC switching power supply drives a first AC current in the first primary winding. The second solid state AC switching power supply drives a second AC current in the second primary winding.

Abstract: A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.

Abstract: A plasma processing apparatus for performing plasma processing with respect to a sample in a reaction vessel includes a first dielectric that is connected to a microwave generating means, the first dielectric having a section that extends along a surface of a sample to be processed that is rectangular, and that makes an electric field strength distribution of the microwaves generated from the microwave generating means substantially uniform along the surface of the sample to be processed; a slot plate that is provided below the first dielectric and in which a plurality of first slots are formed, the slot plate retaining or further enhancing the uniformity of the electric field strength distribution of the microwaves in the first dielectric; a second dielectric that is provided below the slot plate and that retains or further enhances the uniformity of the electric field strength distribution of the microwaves supplied from the slot plate; and processing means that processes the sample using a plasma generated

Abstract: An inductively coupled plasma (ICP) generating apparatus is provided. The apparatus includes an evacuated reaction chamber; an antenna system installed at an upper portion of the reaction chamber to induce an electric field for ionizing reaction gas supplied into the reaction chamber and generating plasma; and an RF power source connected to the antenna system to supply RF power to the antenna system. The antenna system includes a lower antenna installed adjacent to the upper portion of the reaction chamber, and an upper antenna installed a predetermined distance above the lower antenna. Further, the lower and the upper antennas respectively include an outside antenna placed to correspond to edge portions of a substrate within the reaction chamber, and an inside antenna placed inside the outside antenna with a predetermined space therebetween.

Abstract: A plasma processing system including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first gas and a second gas to the process chamber. The system includes a controller that controls the gas injection system to continuously flow a first gas flow to the process chamber and to pulse a second gas flow to the process chamber at a first time. The controller pulses a RF power to the substrate holder at a second time. A method of operating a plasma processing system is provided that includes adjusting a background pressure in a process chamber, where the background pressure is established by flowing a first gas flow using a gas injection system, and igniting a processing plasma in the process chamber. The method includes pulsing a second gas flow using the gas injection system at a first time, and pulsing a RF power to a substrate holder at a second time.

Abstract: A method for manufacturing a substrate with a plasma processing system having preconditioned components. The method comprises obtaining a component of a plasma processing system that has been coated with a film of material, disposing the component in a plasma processing chamber, disposing a substrate on a chuck in the plasma processing chamber, and forming a plasma in a processing region within the plasma processing chamber.

Abstract: A remote plasma source employs a helical coil slow wave structure to couple microwave energy to a flowing gas to produce plasma for downstream substrate processing, such as photoresist stripping, ashing, or etching. The system also includes cooling structures for removing excess heat from the plasma source components.

Abstract: A plasma processing apparatus includes a vacuum processing chamber having a pair of opposing electrodes for plasma generation, one electrode serving as a sample table for a sample including an insulator film. An electrostatic adsorption film is arranged at the sample table electrode to supply a thermal conductive gas between the film and the sample rear surface. A pressure reducing element is also provided. In addition, arrangements are provided to set a gas pressure within said vacuum processing chamber to 0.5 to 4.0 Pa and to apply a high frequency power of 30 MHz to 200 MHz between the electrodes. An electrode cover is disposed at the other electrode, and a clearance between the electrodes is 30 mm to 100 mm.

Abstract: A method of removing photoresist from a wafer or other substrate consists of ashing the photoresist only once the wafer is spaced a predetermined distance above a wafer stage in a process chamber, so that the photoresist is removed at once from all of the surfaces of the wafer. The wafer is heated to a temperature of 210° C. to 230° C. after it is positioned on the upper surface of the wafer stage. The heated wafer is then raised a distance of 9 mm to 11 mm above the upper surface of the wafer stage. At this time, process gas is introduced into the process chamber, and the process gas is converted into plasma. Thus, the plasma efficiently removes the photoresist all at once from the surfaces of the wafer.

Abstract: Method and an apparatus for igniting plasma in a semiconductor manufacturing apparatus are disclosed. An example plasma ignition method and apparatus sets a predetermined pressure, source power and bias power of a chamber and flows a predetermined flow rate of CHF3 and Ar gases into the chamber, introduces a predetermined flow rate of Cl2 gas into the chamber, completes the supply of Cl2 gas, and ignites plasma.

Abstract: This invention provides a plasma reactor for modifying gas by plasma, including a first planar electrode and a second planar electrode, the two electrodes facing opposite each other approximately in parallel; a dielectric body inserted between the first and the second electrodes; and a complex barrier discharge-generating way for providing a predetermined electric potential difference between the first and the second electrodes; wherein the first and the second electrodes are provided so as to apply complex plasma discharge to the gas to be treated fed between the electrodes, to thereby modify the gas. According to the invention, gas modification efficiency can be remarkably improved.

Abstract: A gas distribution ceiling electrode for use as a capacitive source power applicator and gas distribution showerhead in a plasma reactor includes a metal base and a process-compatible protective layer on the interior surface of he electrode having a dopant impurity concentration within a range corresponding to a minimal change in RF power absorption in the protective layer at an RF source power frequency with changes in coating temperature and or thickness. The metal base may have a set of first arcuately slotted gas passages and a set of pressure-dropping orifices coinciding axially with the top ends of the gas passages. The protective coating a set of arcuately slotted gas passages in registration gas passages of the metal base. The pressure drop in the orifices and the electric field drop in the slotted gas passages are both sufficient to maintain the pressure and electric field within the gas passages within a range that prevents arcing.

Abstract: A semiconductor device manufacturing system has a vacuum chamber which is provided with a cathode electrode for holding a substrate to be processed and into which a reactive gas for generating discharging plasma by the application of a high-frequency electric power is introduced, a measuring circuit which measures at least one of the impedance of a system including the plasma, the peak-to-peak voltage of a high-frequency signal applied to the plasma, and a self-bias voltage applied to the cathode electrode, and a sense circuit which compares the measured value from the measuring circuit with previously prepared data and senses the change of processing characteristics with time for the substrate in using the discharging plasma or the cleaning time of the inside of the vacuum chamber.

Abstract: In one aspect of the invention is a method to create a vacuum seal with extended lifetime to form a dielectric break in a vacuum chamber. The method includes the use of an elastic dielectric seal to form a high vacuum seal. It also includes the use of different means to protect the vacuum seal from direct exposure to the plasma and to reactive gases present inside the plasma chamber. Furthermore, it includes the use of elements to ensure a proper compression of the elastic seal, and to avoid its expansion or contraction when the pressures on both sides of the seal are different.

Abstract: An impedance matching circuit for a plasma source includes: a first network including: a first coil; and a RF power supply applying a first voltage to the first coil; and a second network including; a second coil grounded having a second voltage, the second voltage being lower than the first voltage; first and second reactive elements, one end portion of the first and second reactive elements being connected to each end portion of the second coil, respectively; and a load connected to the other end portions of the first and second reactive elements, phases at two end portions of the load being different from each other.

Abstract: In a plasma processing apparatus according to the present invention, a gas inlet port and a discharge port are provided on a chamber for introducing and discharging gas into and from the chamber respectively. A sample to be etched is placed on an electrode part, so that a high-frequency power source applies a high-frequency bias to the sample. An electromagnet provided on the periphery of a plasma generation area generates a magnetic field while a waveguide connected to an upper potion of the chamber introduces a microwave into the plasma generation area through a microwave introduction window. Electron cyclotron resonance is excited for the gas for generating plasma. At least a surface of the microwave introduction window exposed to the plasma generation area is made of quartz, while the gas contains fluorine. The apparatus having the aforementioned structure can remove a material adhering to the surface of the microwave introduction window when the sample is etched.

Abstract: An inductively coupled plasma source may be constructed with a reactor including a gas inlet, a gas outlet, and a tube structure containing an electrically conductive layer with an open loop. The tube structure is disposed between two electrically non-conductive layers that form a continuous loop providing a discharge path. An A.C. power source supplies A.C. voltage to the conductive layer while a D.C. power source supplies a direct current voltage to the conductive layer. An inductor is electrically connected between the conductive layer and the D.C. power source and a capacitor is electrically connected between the conductive layer and the A.C. power source. The conductive layer is biased by the D.C. voltage applied by the D.C. voltage. Induction of a magnetic field is generated by the flow of current of conductive layer to which the A.C.

Abstract: The apparatus for etching a thin film using the plasma includes a reaction chamber having a diffusion area and a reaction area; an upper electrode disposed in the top of the reaction area; a lower electrode spaced apart from the upper electrode and arranged at the bottom of the reaction area; a RF power supply applying RF power to the upper and lower electrodes so as to form the plasmas between the upper and lower electrodes; a gas inlet applying processing gases to the diffusion area; gas-exhausting members sucking the residual plasmas and byproducts of the plasma etch; a buffer plate surrounding the lower electrode at the bottom of the reaction chamber and having a plurality of vent holes and vent hole protectors; and a shielding member between the lower electrode and the buffer plate, the shielding plate protecting the lower electrode from the plasmas.

Abstract: A microwave plasma processing apparatus is disclosed that enables fast and easy plasma ignition at the pressure for plasma processing In the microwave plasma processing apparatus, a plasma ignition facilitating unit is provided to facilitate plasma ignition induced by a microwave. The plasma ignition facilitating unit includes a deuterium lamp that emits vacuum ultraviolet rays, and a transmission window that allows the vacuum ultraviolet rays to penetrate and irradiate a plasma excitation space. The transmission window is a convex lens, and focuses the vacuum ultraviolet rays to enhance ionization of the plasma excitation gas. With such a configuration, it is possible to induce plasma ignition easily and quickly.