Abstract: Provided herein is a laser processing system integrated with an MBE device, including an MBE growth chamber, a sample table, an optical path mechanism, a heat insulation mechanism, and a cooling mechanism. An opening is formed in a side of the MBE growth chamber. The sample table is fixed in the MBE growth chamber, corresponds to a position of the opening, and is used for placing a substrate sample material. The optical path mechanism is relatively arranged on a side of the MBE growth chamber, and the optical path mechanism is provided with a light-emitting end. A side of the light-emitting end penetrates through the opening of the MBE growth chamber, extends into the MBE growth chamber, and is spaced apart from the sample table. The optical path mechanism is sealedly connected to the opening of the MBE growth chamber.

Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.

Abstract: A furnace (2) has at least one furnace chamber (20) delimited by a wall (25); at least one opening (5) is provided in the wall (25). The opening is provided with at least one nozzle (50), configured to generate a sealing air flow. A glass semi-finished product (4) can be introduced into the furnace chamber.

Abstract: Support plates and support structures for thermal processing systems to heat workpieces are provided. In one example, a thermal processing apparatus is provided that includes a plurality of heat sources, a rotatable support plate, and a support structure having a flexibility in the radial direction of the rotatable support plate that is greater than a flexibility in the azimuthal direction of the rotatable support plate. Also provided are support plates for supporting a workpiece in a thermal processing apparatus. The support plate can include a base defining a radial direction and an azimuthal direction and at least one support structure extending from the base having a flexibility in the radial direction of the base that is greater than a flexibility in the azimuthal direction of the base.

Abstract: Method for cooling a heating element of an electric heater in a thermal process cycle comprising the steps of cooling the heating element at a first cooling rate from a first temperature to a second temperature and cooling the heating element at a second cooling rate from the second temperature to a third temperature, wherein the second cooling rate is faster than the first cooling rate.

Abstract: A substrate processing apparatus includes a holder and a heating device. The holder is configured to hold a central portion of a bottom surface of a substrate to be rotated. The heating device is configured to supply a heated fluid to the bottom surface of the substrate. The heating device includes multiple fins, a heat source, a fluid introduction unit and a fluid discharge unit. The multiple fins are arranged along a circumferential direction of the substrate to be located under the substrate at an outer side than the holder. The heat source is configured to heat the multiple fins. The fluid introduction unit is configured to introduce the fluid to the multiple fins. The fluid discharge unit is configured to discharge the fluid, which is heated while passing through the multiple fins, to the bottom surface of the substrate.

Abstract: A thermostatic module of a compact gas sensing device and a compact gas sensing device are disclosed. The thermostatic module includes a housing unit, a thermal insulation unit, a heat conducting unit, a temperature sensor, a heater and a control circuitry board. The thermal insulation unit is placed inside a first accommodation space provided by the housing unit, and forms therein a second accommodation space in which the heat conducting unit is placed. The interior of the heat conducting unit forms a third accommodation space where gas sensor modules can be housed, and also a gas passage channel. The heater generates and transfers heat to the heat conducting unit, whose interior temperature is constantly probed by the temperature sensor and input to the control circuitry board which dynamically adjusts the heating power by the heater to make sure the measured temperature is always stabilized around a preset target value.

Abstract: A holding device that holds an object on a first surface of a first portion of a plate-shaped member includes a heater pattern formed on a ceramic green sheet and a cover layer covering the heater pattern. A second portion of the plate-shaped member and a heater electrode are manufactured by firing a layered body constituted by a plurality of ceramic green sheets. A second joining portion joins the second portion and a base member. A temperature distribution of a second surface of the second portion is measured while cooling with a cooling mechanism of the base member and supplying power to the heater electrode. Based on a result of the measurement, an electrical resistance of the heater electrode is adjusted by removing a portion of the heater electrode together with the cover layer. A first joining portion joins the second portion and the first portion of the plate-shaped member.

Abstract: A method for cleaning a load lock in a substrate processing system includes, in a first period, opening a first valve in fluid communication with a gas source to supply gas through a first vent into a gas volume of the load lock. The gas is supplied at a pressure and flow rate sufficient to disturb particles from surfaces of the load lock. The method includes, in a second period subsequent to the first period and with the first valve opened, opening a second valve in fluid communication with a pump and turning on the pump to flush the gas and particles from the gas volume of the load lock, and, in a third period subsequent to the second period, closing the first valve while continuing to pump the gas and the particles from the gas volume of the load lock via the second valve.

Abstract: The present invention discloses a coating device including: a first shell, having a top portion and a side portion; and a second shell, accommodated in the first shell and at least partially divergently extending downwards from the top portion of the first shell. The first shell and the second shell define a first space in between, the second shell defines a second space, and the first space surrounds the second space and the two are not in communication.

Abstract: Embodiments of the present disclosure provide a sintering device and a pressure sintering mechanism with a controllable atmosphere thereof. The pressure sintering mechanism with the controllable atmosphere includes: a telescopic tube, wherein at least a part of the telescopic tube is an elastically telescopic bellows section; two pressure components arranged opposite to each other, wherein the telescopic tube is configured between the two pressure components, the two pressure components are configured to seal an opening of an end of the telescopic tube when the two pressure components are close to each other to form a sealed sintering chamber inside the telescopic tube and apply pressure to a product inside the sintering chamber; and a heating component configured to heat the product inside the sintering chamber.

Abstract: A heater assembly having a top seal and a second seal configured to account for deviation in processing heights and motor runoff of a heater standoff. The top seal is positioned between a shield plate and a top plate and the bottom seal is positioned between a heater mounting base and the heater standoff.

Abstract: Embodiments of substrate supports for use in substrate processing chambers are provided herein. In some embodiments, a substrate support includes: an upper assembly having a base plate assembly coupled to a lower surface of a cooling plate, wherein the base plate assembly includes a plurality of electrical feedthroughs, and wherein the cooling plate includes a plurality of openings aligned with the plurality of electrical feedthroughs; an electrostatic chuck disposed on the upper assembly and removably coupled to the cooling plate, wherein the electrostatic chuck has a chucking electrode disposed therein that is electrically coupled to a first pair of electrical feedthroughs of the plurality of electrical feedthroughs; and an inner tube coupled to the cooling plate and configured to provide an RF delivery path to the electrostatic chuck.

Abstract: Semiconductor wafers are produced by a process wherein a single-crystal ingot of semiconductor material is pulled and at least one wafer is removed from the ingot, wherein the wafer is subjected to a thermal treatment comprising a heat treatment step in which a radial temperature gradient acts on the wafer, wherein an analysis of the wafer of semiconductor material with respect to the formation of defects in the crystal lattice, so-called stress fields, is carried out.

Abstract: A device is provided to fasten a susceptor of a CVD reactor to a drive shaft, and by the device, the susceptor can be set into rotation. The device includes one or more of a base plate, a support plate, adjusting levers, and a flange element. The drive shaft carries the base plate, to which the support plate, which carries the susceptor, is fastened. The inclination of the support plate relative to the base plate can be adjusted by the adjusting levers. The support plate is connected to the flange element by a screw. A through opening aligned with the screw is closed with a plug.

Abstract: Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.

Abstract: The inventive concept relates to an apparatus for treating a substrate. In an embodiment, the apparatus includes a process chamber having a process space in which the substrate is treated with a fluid in a supercritical state, a support unit that supports the substrate in the process space, a fluid supply unit that supplies the fluid into the process space, a filler member disposed to face the substrate placed on the support unit in the process space, and a measurement unit that measures a state in the process space, the measurement unit being provided in the filler member.

Abstract: A controller performs an adjustment processing including: forming a film on a surface of a substrate by a film forming unit; removing a peripheral portion of the film by the film forming unit; acquiring surface information indicating a state of the surface of the substrate including the film, from which the peripheral portion has been removed, by a surface inspection unit and adjusting a cut width of the peripheral portion based on the surface information; and peeling the film, from which the peripheral portion has been removed, by the film forming unit, and a process processing including: forming the film on the surface of the substrate by the film forming unit; and removing the peripheral portion by the cut width adjusted in the adjustment processing in the film forming unit.

Abstract: An apparatuses relating generally to a test wafer, processing chambers, and method relating generally to monitoring or calibrating a processing chamber, are described. In one such an apparatus for a test wafer, there is a platform. An optical fiber with Fiber Bragg Grating sensors is located over the platform. A layer of material is located over the platform and over the optical fiber.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A cooking appliance may employ one or both of a post-preheat phase and a two stage preheat phase to both accelerate preheating of an oven cavity while minimizing temperature differentials therein. A post-preheat phase may be performed subsequent to a preheat phase, but prior to a cooking phase, to cycle a cooking element disposed in a cooler portion of an oven cavity to reduce a temperature differential between the top and bottom of the oven cavity. A two stage preheat phase may sequentially activate each of top and bottom cooking elements in an oven cavity a single time.

Abstract: There is provided a placement table having an upper surface on which a device to be processed is placed. The placement table comprises: a top plate having a placement surface for the device; a heating unit configured to heat the top plate; a plurality of temperature sensors configured to acquire temperature of the top plate at desired measurement positions in a plan view; and a positioning unit electrically connected to the temperature sensors and configured to position the temperature sensors at the measurement positions in a plan view. The positioning unit is formed of a flexible substrate having flexibility.

Abstract: Provided is a soldering apparatus including: a furnace body including a processing chamber in which boards are processed; a gasket provided at least to a part of the furnace body, and configured to seal the furnace body; a sealed space isolated from the processing chamber, and defined by the furnace body and the gasket; a gas supply apparatus configured to supply a first gas into the sealed space; and a measuring apparatus configured to measure one of pressure in the sealed space and concentration of a second gas in the sealed space.

Abstract: A graphitization furnace with a rapid active cooling system is disclosed, including a furnace body and an active cooling system. The active cooling system is provided with at least one medium loop unit and a control unit for controlling a flow velocity of a medium in the medium loop unit, each medium loop unit includes a plurality of heat removal pipes pre-embedded in a furnace cavity of the furnace body, and each heat removal pipe is provided with a medium flow channel communicated with the medium loop unit. The graphitization furnace with a rapid active cooling system can realize rapid active cooling, short turnover time and high energy utilization efficiency of the graphitization furnace, and has wide applicability, which is not only suitable for construction of a new graphitization furnace, but also suitable for transformation of the existing Acheson graphitization furnace.

Abstract: There is provided a filter device. In the filter device, a plurality of coils are arranged coaxially. Each of a plurality of wirings is electrically connected to one end of each of the coils. Each of a plurality of capacitors is connected between the other end of each of the coils and the ground. A housing is electrically grounded and configured to accommodate therein the coils. Further, each of the wirings at least partially extends into the housing and has a length that is adjustable in the housing.

Abstract: Apparatuses and methods for measuring substrate temperature are provided. In one or more embodiments, an apparatus for estimating a temperature is provided and includes a plurality of electromagnetic radiation sources positioned to emit electromagnetic radiation toward a reflection plane, and a plurality of electromagnetic radiation detectors. Each electromagnetic radiation detector is positioned to sample the electromagnetic radiation emitted by a corresponding electromagnetic radiation source of the plurality of electromagnetic radiation sources. The apparatus also includes a pyrometer positioned to receive electromagnetic radiation emitted by plurality of electromagnetic radiation sources and reflected from a substrate disposed at a reflection plane and electromagnetic radiation emitted by the substrate. The apparatus includes a processor configured to estimate a temperature of the substrate based on the electromagnetic radiation emitted by the substrate.

Abstract: A film deposition apparatus includes a process chamber, and a turntable disposed in the process chamber and configured to receive a substrate along a circumferential direction. At least one ozone gas supply part configured to supply ozone gas on the turntable is provided. A plate member is disposed to cover the ozone gas supply part. An ozone gas activator is disposed on or above an upper surface of the plate member and configured to activate the ozone gas.

Abstract: A control system operable to train a control tuner to generate temperature setpoint tracking improvements for a thermal processing system is provided. In one example implementation, temperature setpoint tracking improvements are achieved by generating system controller parameter adjustments based on a difference between a simulated workpiece temperature estimate and an actual workpiece temperature estimate. For example, a system model can generate a simulated workpiece temperature estimate simulating an actual workpiece temperature estimate, and based on the difference between the simulated and actual workpiece temperature estimates, generate clone controller parameter adjustments. The clone controller parameter adjustments can be used to generate system controller parameter adjustments, which can improve temperature setpoint tracking for the thermal processing system.

Abstract: A dental treatment device with an energy source is provided which is arranged at least partially in or on a working chamber, comprising a stamp which is movable in relation to the dental treatment device as for the rest and which comprises a receiving plate for dental restoration parts. It is provided that the working chamber has a through-opening at the top, into which the receiving plate (16) is at least partially movable. Further, a drive is provided for the transfer of the stamp from a working position into a presentation position, and optionally vice versa. A cover (32) is mounted, in particular hinged, on the dental treatment device as for the rest, by which cover the through-opening (26) is closable.

Abstract: A plate disposed between a lamp and a material to be heated is disclosed. The material absorbs a portion of the energy from the lamp and reflects a second portion of the energy. The plate absorbs the reflected energy and transmits the reflected energy back to the material.

Abstract: The present invention relates to a furnace device for heating a plate, in particular a metal plate, by convection. The furnace device has a housing, in which a temperature control region for temperature-controlling a component part and an adjustment region are formed, wherein the adjustment region has a temperature control device for adjusting a temperature of a temperature control fluid. Further, the furnace device has a positioning device for positioning the plate in the temperature control region in a predetermined orientation, and a ventilator, which is arranged in the housing and which is adapted to circulate the temperature control fluid in the housing between the temperature control region and the adjustment region such that the temperature control fluid is flowable in a flow direction along a surface of the plate.

Abstract: A plasma processing apparatus includes a stage having a placing surface on which a workpiece is accommodated; a heater provided in the stage and configured to adjust a temperature of the placing surface of the stage; and a controller. The controller is configured to control a supply power to the heater; measure the supply power in a transient state where the supply power to the heater increases and in a second steady state where the supply power to the heater is stable in an extinguished state of plasma; calculate a heat input amount and a heat resistance by performing a fitting on a calculation model that calculates the supply power in the transient state using the heat input amount from the plasma and the heat resistance between the workpiece and the heater as parameters; and calculate a temperature of the workpiece in the first steady state.

Abstract: Support plates for localized heating in thermal processing systems to uniformly heat workpieces are provided. In one example implementation, localized heating is achieved by modifying a heat transmittance of a support plate such that one or more portions of the support plate proximate the areas that cause cold spots transmit more heat than the rest of the support plate. For example, the one or more portions (e.g., areas proximate to one or more support pins) of the support plate have a higher heat transmittance (e.g., a higher optical transmission) than the rest of the support plate. In another example implementation, localized heating is achieved by heating a workpiece via a coherent light source through a transmissive support structure (e.g., one or more support pins, or a ring support) in addition to heating the workpiece globally by light from heat sources.

Abstract: A pedestal for a thermal treatment chamber is disclosed that includes a body consisting of an optically transparent material. The body includes a first plate with a perforated surface having a plurality of nozzles formed therein, a first portion of the plurality nozzles formed in the body at an angle that is orthogonal to a plane of the first plate, a second portion of the plurality of nozzles formed in the body in an azimuthal orientation and at an acute angle relative to the plane of the first plate, and a third portion of the plurality nozzles formed in the body in a radial orientation and at an acute angle relative to the plane of the first plate.

Abstract: An apparatus for treating a substrate includes a housing having a treatment space therein, a plate that supports the substrate in the housing, a heating unit having a heating wire that is provided inside the plate and that heats the substrate, a main temperature sensor that directly measures temperatures of the plate, and an auxiliary temperature sensor that measures temperatures of the heating wire.

Abstract: The present disclosure provides an apparatus for removing bubbles in a flexible substrate. The flexible substrate includes a baseplate and a polyimide layer coated on the baseplate. The apparatus includes a chamber including a top wall, a sidewall, and a bottom wall, wherein the top wall, the sidewall, and the bottom wall define an accommodation space; a heating plate disposed in the accommodation space; and a cooling conduit embedded in at least one of the top wall and the sidewall of the chamber.

Abstract: A dual-purpose sintering furnace including a furnace body having a furnace chamber, a first furnace mouth and a second furnace mouth which are communicated with the furnace chamber, a furnace door hinged to the furnace body and configured for closing the first furnace mouth, a blocking member lap-jointed inside the furnace chamber and configured for blocking the second furnace mouth, a sample stage, an ejection rod fixedly arranged on a sample placement face of the sample stage, a lifting device configured for driving the sample stage to raise or lower, so that the ejection rod pushes the blocking member until the second furnace mouth is opened, and so that the sample stage enters the furnace chamber through the second furnace mouth. The dual-purpose sintering furnace can complete a large amount of sintering as conventional sintering and also implement rapid sintering.

Abstract: A hollow-cylindrical heat shield includes at least one graphite foil and at least one fiber structure, preferably a wound fiber structure, disposed on the outer side of the at least one graphite foil. The (wound) fiber structure has a degree of coverage of less than 100%. A high-temperature furnace or gas converter having a heat shield is also provided.

Abstract: When a carrier storing a plurality of dummy wafers therein is transported into a heat treatment apparatus, the carrier is registered as a dummy carrier exclusive to the dummy wafers. A dummy database in which a treatment history of each of the dummy wafers is associated with the carrier is held in a storage part. The treatment history of each of the dummy wafers registered in the dummy database is displayed on a display part of the heat treatment apparatus. An operator of the heat treatment apparatus views the displayed information to thereby appropriately grasp and manage the treatment history of each of the dummy wafers.

Abstract: A heat treatment apparatus includes a processing container extended in a vertical direction; a heater provided around the processing container; a temperature sensor provided along a longitudinal direction of the processing container either in the processing container or in a space between the processing container and the heater; and a pair of first partitions provided in the space across a half line that extends from a central axis of the processing container and passes through the temperature sensor, and extending along the longitudinal direction of the processing container.

Abstract: According to one aspect of the technique described herein, there is provided a technique including: forming a film on a substrate by performing a cycle a predetermined number of times, wherein the cycle includes sequentially performing: (a) supplying source gas to a substrate accommodated in a reaction tube; (b) exhausting the source gas remaining in the reaction tube through an exhaust pipe connected to the reaction tube; (c) supplying a reactive gas reacting with the source gas to the substrate; and (d) exhausting the reactive gas remaining in the reaction tube through the exhaust pipe, wherein at least in (a) and (c), a temperature of the reaction tube is set to a first temperature lower than a thermal decomposition temperature of the source gas and higher than a condensation temperature of the source gas and a temperature of the exhaust pipe is set to a second temperature equal to or higher than the first temperature.

Abstract: Methods and systems for providing a short-duration anneal are provided. In one example, the methods and systems can include placing a workpiece in a thermal processing chamber. The workpiece can include a device side surface and an opposing non-device side surface. The methods and systems can include delivering an energy pulse from at least one heat source to the non-device side surface of the workpiece. In another example, the methods and systems can include depositing a layer of semiconductor material onto the semiconductor workpiece at the device side of the semiconductor workpiece. The methods and systems can include doping the layer of semiconductor material with a doping species and annealing the layer for crystallization using solid phase epitaxy.

Abstract: A semiconductor wafer held by a susceptor in a chamber is irradiated with halogen light radiated from a plurality of halogen lamps to be heated. A stainless steel block having an opening in a cylindrical shape is provided between the chamber and the halogen lamps. This reduces a distance from a light emitting portion in a light source region in which the plurality of halogen lamps is arranged, throughout the entire circumference of the opening in a cylindrical shape, so that the amount of reflected light from the inner wall surface of the opening toward the peripheral portion of the semiconductor wafer becomes uniform. This causes a uniform increase in illuminance of the peripheral portion of the semiconductor wafer, where temperature tends to decrease, at the time of light irradiation from the halogen lamps, so that in-plane temperature distribution of the semiconductor wafer can be made uniform.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a system for processing a substrate includes a process chamber comprising a first processing volume and a second processing volume; a first heating device configured to heat a substrate to a first temperature; a carrier configured to support the substrate while the substrate is being heated using the first heating device to the first temperature and transfer the substrate to and from each of the first processing volume and the second processing volume; a second heating device configured to maintain the substrate at or near the first temperature; and a chuck configured to receive the substrate from the carrier, and comprising an outer zone and an inner zone having independent variable pressure control to apply a chucking force at the outer zone that is different from a chucking force provided at the inner zone.

Abstract: In one embodiment of the invention, there is provided a tool for annealing a magnetic stack. The tool includes a housing defining a heating chamber; a holding mechanism to hold at least one wafer in a single line within the heating chamber, a heating mechanism to heat the at least one wafer; and a magnetic field generator to generate a magnetic field whole field lines pass through the single line of wafers during a magnetic annealing process; wherein the holding mechanism comprises a wafer support of holding the single line of wafers between the heating mechanism and the magnetic field generator.

Abstract: A dental furnace for firing dental-ceramic compounds comprises a firing chamber for receiving ceramic elements to be fired. Further, a heating device for heating and firing the ceramic element is provided. The heating device comprises at least one heating element for producing IR radiation in the range of 0.8-5 ?m.

Abstract: A semiconductor wafer held by a holding part in a chamber is irradiated and heated with halogen light emitted from a plurality of halogen lamps. A cylindrical louver and an annular light-shielding member, both made of opaque quartz, are provided between the halogen lamps and the semiconductor wafer. The outer diameter of the light-shielding member is smaller than the inner diameter of the louver. Light emitted from the halogen lamps and passing through a clearance between the inner wall surface of the louver and the outer circumference of the light-shielding member is applied to a peripheral portion of the semiconductor wafer where a temperature drop is likely to occur. On the other hand, light travelling toward an overheat region that has a higher temperature than the other region and appears in the surface of the semiconductor wafer when only a louver is installed is blocked off by the light-shielding member.

Abstract: An automatic analysis device is provided with a storage chamber for adjusting the temperature of and storing a container in which liquid is stored, an opening provided in a portion of the storage chamber, and a loader mechanism for bringing the container in and out of the storage chamber by moving the container through the opening, and is characterized in that the loader mechanism and storage chamber are closed by an elastic body. In the present invention, attaching a sealing member for sealing to an upper part from among overlapping parts makes it difficult for debris and dust to adhere to the sealing member and makes it possible to maintain the sealed state of a reagent storage chamber over a long period of time.

Abstract: Disclosed is a sintering furnace comprising a furnace body and a lifting device, wherein the furnace body comprises a furnace chamber (10) and a furnace mouth (20), the furnace chamber (10) is connected with the furnace mouth (20), wherein the sintering furnace further comprises a sealing member (30) provided at the lifting device; when the sintering furnace is in a loading or unloading condition, the sealing member (30) blocks the furnace mouth (20). When the sintering furnace is in an unloading condition, the sealing member (30) can block the furnace mouth (20), the furnace chamber (10) does not contact with the outside directly, thus the temperature in the furnace chamber (10) will not drop sharply, and the service life of the sintering furnace will be increased.

Abstract: A system and method for performing corrective processing of a workpiece is described. The system and method includes receiving a first set of parametric data from a first source that diagnostically relates to at least a first portion of a microelectronic workpiece, and receiving a second set of parametric data from a second source different than the first source that diagnostically relates to at least a second portion of the microelectronic workpiece. Thereafter, a corrective process is generated, and a target region of the microelectronic workpiece is processed by applying the corrective process to the target region using a combination of the first set of parametric data and the second set of parametric data.