Abstract: A photoalignment equipment includes a light emitting device, a platform, a pipe assembly, and a blower. The light emitting device has an ultraviolet light source and an accommodating space. The ultraviolet light source is located in the accommodating space. When the ultraviolet light source emits an ultraviolet light, at least a portion of air in the accommodating space is transformed into a plurality of ozone molecules. The platform is under the light-emitting device. The pipe assembly has a first opening and at least one second opening. The first opening is communicated with the accommodating space, and the second opening faces the platform. The blower is communicated with the pipe assembly to draw the ozone molecules in the accommodating space by the first opening of the pipe assembly and exhausts the ozone molecules from the second opening of the pipe assembly.

Abstract: Disclosed is a magnetic annealing apparatus including a carrier conveyance region and a workpiece conveyance region. The carrier conveyance region includes: a first mounting table where a carrier is disposed; second mounting tables where carriers convey workpieces from the carrier conveyance region to the workpiece conveyance region; a storage unit; and a carrier conveyance mechanism that performs carrying-out/carrying-in of the carriers. The workpiece conveyance region includes: an aligner device; a workpiece boat; a workpiece conveyance mechanism that conveys the workpieces from the carriers disposed on the second mounting tables to the workpiece boat via the aligner device; a heating unit; a magnetic field generating unit; and a transfer mechanism that transfers the workpieces held by the workpiece boat into the magnetic field generating unit.

Abstract: A first flash heating is performed in which a lower flash lamp irradiates a back surface of a semiconductor wafer with flashes of light, so that heat conduction from the back surface to a surface of the semiconductor wafer raises the temperature of the surface from the room temperature to an intermediate temperature. Then, a second flash heating is performed in which an upper flash lamp irradiates the surface of the semiconductor wafer with flashes of light, to raise the temperature of the surface of the semiconductor wafer from the intermediate temperature to a target temperature. Since only the irradiation with flashes of light emitted from the lower flash lamp and the upper flash lamp is used to cause the semiconductor wafer having the room temperature to reach the target temperature, all heat treatments can be completed in an extremely short time of one second or less.

Abstract: The present invention relates to a heater block and a substrate treatment apparatus, and more particularly to a heater block to perform heat treatment on a substrate and a substrate treatment apparatus having the same. According to embodiments of the present invention, it is provided a heater block for a substrate treatment apparatus having heating lamps on its one side to transfer heat to a target subjected to heat treatment, the heating lamps having different arrangement patterns in a plurality of regions on said one side.

Abstract: A heater management system provides heat to heated zones of a mobile unit. For each heated zone, the heater management system includes a heater driver and a sensor. The heater driver is controlled by a unique control channel that is configured to heat the heated zone. The sensor senses environmental data external and internal to the heated zone. The heater management system includes a memory storing a heater driver prioritization database. The heater management system includes a heater control logic unit programmed to receive periodic reports from each of the sensors, prioritize the heated zones by utilizing the heater driver database as a function of the periodic reports, and determine power to be provided to each of the heater drivers based on the prioritizing operation and a predetermined global power limitation.

Abstract: Three support members made of silicon carbide are provided fixedly on an inner periphery of the support ring. The support members are inclined at an angle in the range of 15 to 30 degrees with respect to a horizontal plane. With an outer peripheral edge of a semiconductor wafer supported by the three support members, a heating treatment is performed by irradiating the semiconductor wafer with halogen light from halogen lamps. Silicon carbide absorbs the halogen light better than quartz. The support members support the outer peripheral edge of the semiconductor wafer in point contacting relationship, so that the contact between a holder and the semiconductor wafer is minimized. This minimizes the disorder of the temperature distribution of the semiconductor wafer due to the support members to achieve the uniform heating of the semiconductor wafer.

Abstract: Forming memristors on imaging devices can include forming a printhead body comprising a first conductive material, forming a memory on the printhead body by performing an oxidation process to form a switching oxide material on the first conductive material, and forming a second conductive material on the switching oxide material.

Abstract: A heat treatment apparatus including: a processing container for processing wafers held in a boat; heaters for heating the processing container; and a control section for controlling the heaters. Heater temperature sensors are provided between the heaters and the processing container, in-container temperature sensors are provided in the processing container, and movable temperature sensors are provided in the boat. The temperature sensors are connected to a temperature estimation section. The temperature estimation section selects two of the three types of temperature sensors, e.g. the movable temperature sensors and the in-container temperature sensors, and determines the temperature of a wafer according to the following formula: T=T1×(1??)+T2×?, ?>1, where T1 and T2 represent detection temperatures of the selected temperature sensors, and ? represents a mixing ratio.

Abstract: A photoalignment equipment includes a light emitting device, a platform, a pipe assembly, and a blower. The light emitting device has an ultraviolet light source and an accommodating space. The ultraviolet light source is located in the accommodating space. When the ultraviolet light source emits an ultraviolet light, at least a portion of air in the accommodating space is transformed into a plurality of ozone molecules. The platform is under the light-emitting device. The pipe assembly has a first opening and at least one second opening. The first opening is communicated with the accommodating space, and the second opening faces the platform. The blower is communicated with the pipe assembly to draw the ozone molecules in the accommodating space by the first opening of the pipe assembly and exhausts the ozone molecules from the second opening of the pipe assembly.

Abstract: A stable and highly reliable device for detecting damage or contact failures of respective parts is provided. The device includes a processing chamber for processing a substrate; a heater for heating the substrate; a substrate support accommodating the heater and installed inside the processing chamber; a shaft for supporting the substrate support; a wire inserted through the shaft; a supporting unit for holding the wire; and a temperature detector connected to the supporting unit.

Abstract: A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.

Abstract: Disclosed is a heating apparatus for manufacturing a display device, which prevents damage or breakage even though a heating member is deformed by heat, and extends a period for replacement of the heating member, wherein the heating apparatus comprises the heating member for emitting heat so as to heat a material to be deposited on a substrate prepared for manufacturing the display device, a first installing device for supporting the heating member, and a second installing device provided with a passing hole for passing the other end of the heating member therethrough.

Abstract: A sintering device (1) for sintering workpieces, in particular dental workpieces, in a shielding gas atmosphere, wherein the sintering device (1) has at least one sintering chamber (2) with at least one gas inlet (3) and at least one gas outlet (4) for a gas exchange in a sintering chamber cavity (5) which is surrounded by the sintering chamber (2), and the sintering device has at least one sintering material cup (6) arranged in the sintering chamber cavity (5) in order to receive the workpiece to be sintered. The sintering device (1) additionally has at least one sintering material cover (7) for covering the workpiece to be sintered in the sintering material cup (6).

Abstract: A heat treatment apparatus and control method enabling the apparatus to settle down an internal temperature of a treating vessel to a target temperature accurately and quickly. The heat treatment apparatus includes a furnace body with a heater on an inner circumferential surface thereof, the treating vessel disposed inside the furnace body, a cooling medium supply blower and cooling medium release blower each connected to the furnace body, and a temperature sensor provided inside the treating vessel. A signal from the temperature sensor is sent to a heater output computing unit and blower output computing unit included in a controller. The heater output computing unit determines a heater output level based on a heater output numerical model and the signal from the temperature sensor. The blower output computing unit determines a blower output level based on a blower output numerical model and the signal from the temperature sensor.

Abstract: A substrate supporting assembly in a reaction space includes a heater, a substrate support member, and a shim positioned between the heater and the substrate support member. The shim may be removably secured between the heater and the substrate support member. The shim may further include an inner surface defining a perimeter of a gap. The gap may be further defined by a bottom surface of the substrate support member and a top surface of the heater. The substrate support member may further include a shoulder positioned radially outside of a substrate support position and wherein the shim inner surface is radially aligned with the substrate support member shoulder.

Abstract: A heating apparatus comprises a heating element, an inner shell for supporting the heating element, an outer shell disposed along the outer boundary of the inner shell, a cooling medium passage for conveying a cooling medium between the inner shell and the outer shell, a first opening provided in the inner shell, a second opening provided in the outer shell, and a partition arranged to extend from the first opening to the second opening for developing at least a space separated from the cooling medium passage and between the inner shell and the outer shell. The heating apparatus further comprises an insulator for shutting up a gap provided between the partition and the second opening.

Abstract: A heater assembly with enhanced cooling pursuant to various embodiments described herein makes use of fluidic flow in the insulation or in the space used for insulation. By creating a natural convection or forced convection flow, the heater cools down faster, it can operate at lower temperatures and/or higher temperature precision, and it can improve temperature controllability by generating higher heat loss rates.

Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

Abstract: In an apparatus and process for treating wafer-shaped articles, a spin chuck holds a wafer-shaped article in a predetermined orientation relative to an upper surface of the spin chuck. A heating assembly comprises a housing containing at least one infrared heating element. The heating assembly is mounted above the upper surface of the spin chuck and adjacent a wafer-shaped article when mounted on the spin chuck. The housing also contains a conduit having an inlet connected to a source of cooling fluid and an outlet returning cooling fluid to the source of cooling fluid.

Abstract: A first flash heating is performed in which a flash lamp emits a first flashing light to a semiconductor wafer having been heated to a first preheating temperature equal to or lower than 650 degrees C. by a light emission from a halogen lamp so that the temperature of a surface of the semiconductor wafer reaches 1000 degrees C. or higher. Then, a second flash heating is performed in which a second flashing light is emitted to the semiconductor wafer having been further heated by a light emission of the halogen lamp. Performing the first flash heating can suppress diffusion of impurity in the subsequent second flash heating. In the second flash heating, the impurity is activated and introduced crystal defects are recovered.

Abstract: A method of lowering a temperature of a substrate table uses a substrate W processing system including a first substrate table 2b; one or more processing chambers 1b, in each of which the first substrate table 2b is disposed, the processing chamber being configured to perform a predetermined process, with the substrate being placed on the first substrate table 2b; a substrate transfer apparatus 31 configured to transfer the substrate to the processing chamber 1b; a transfer chamber in which the substrate transfer apparatus 31 is disposed; and a second substrate table configured to cool the substrate. The method of lowering a temperature of a substrate table comprises the steps of first transfer in which the substrate W placed on the first substrate table 2b is transferred to the second substrate table by the substrate transfer apparatus 31, and second transfer in which the substrate placed on the second substrate table is transferred to the first substrate table 2b.

Abstract: Provided is an apparatus for manufacturing a compound semiconductor, which forms a compound semiconductor layer using a metal-organic chemical vapor deposition method. The apparatus is characterized in that: the apparatus is provided with a reaction container, a holder, which is disposed in the reaction container and has placed thereon a subject, on which the layer is to be formed, the subject having facing up the subject surface where the layer is to be formed, and a raw material supply port, through which the raw material gas of the compound semiconductor is supplied to the inside of the reaction container from the outside; the holder is in contact with the lower surface of the subject, the contact being inside of the outer circumferential portion of the subject to the center of the upper surface of the holder; and that the holder has a supporting portion, which supports the subject such that a predetermined interval is maintained between the upper surface of the holder and the lower surface of the subject.

Abstract: A semiconductor substrate processing apparatus (1), comprising a substrate support assembly (30), including a substrate support (32) defining an outer support surface (34) for supporting a substrate or substrate carrier (24) thereon, and a heater (50) comprising a heat dissipating portion (54) that is disposed within the substrate support (32) and that extends underneath and substantially parallel to the support surface (34), said substrate support (32) being rotatably mounted around a rotation axis (L) that extends through said support surface (34), such that the support surface (34) is rotatable relative to the heat dissipating portion (54) of the heater (50).

Abstract: Disclosed are cooking devices and assemblies that employ infrared radiant energy to cook food. One cooking assembly includes a cooker including a body having a cooker lid configured to engage a top of the body, an inner layer arranged within the body and defining a heating cavity within the cooker, a heating element arranged within the heating cavity and configured to heat the heating cavity, and a cooking vessel made of a transmissive material and configured to be arranged within the heating cavity, the cooking vessel defines a cooking cavity configured to receive food therein, wherein the heating element convectively heats the cooking vessel and infrared radiant energy is thereby emitted from interior surfaces of the cooking vessel into the cooking cavity to cook the food.

Abstract: The installation (10) is adapted for the heat treatment of objects, such as plastic preforms (17), and comprises a reflective device exhibiting a plurality of elongated and opened IR-reflective cavities stacked one onto the other according to a stacking axis and arranged to lodge elongated IR lamps (16) within, where the aperture of each cavity faces generally a main axis parallel to the stacking axis along which the object would be placed. The reflective device (20) further comprises protrusions separating the cavities one to the other and extending generally transversal/transverse to the stacking axis, the reflective device being made as at least one integral block of a heat-conductive material. The cavities may each comprise a curved bottom portion and two opposite side surfaces provided with respective longitudinal breaks of slope at a junction with the curved bottom.

Abstract: Embodiments of the present invention provide thermal processing chambers including a drive mechanism and a heating assembly disposed on opposite sides of a substrate support assembly. Particularly, the heating assembly is disposed below the substrate support assembly to process a substrate with a device side facing up and the drive mechanism is disposed above the substrate assembly.

Abstract: A vacuum oven or vacuum furnace is disclosed having an energy distribution sleeve that conforms to the shape of an interior heating chamber. The energy distribution sleeve may be of generally annular shape, like a ring, and located in a substantially regularly spaced and offset relationship from a heating element located within walls adjacent the interior heating chamber. The energy distribution sleeve includes a thermal conductive material which absorbs and re-radiates heat emitted from the heating element, thereby providing more consistent and regular radiation fields for heat treating a work piece that is loaded on a work holding tray and, upon the vacuum oven being in an operational position, the work piece is located within the furnace chamber.

Abstract: A heat treatment apparatus wherein a nozzle is accurately provided on an adaptor to prevent the nozzle from interfering with other part items and a possibility of breakage due to heat expansion of the nozzle can be reduced. The heat treatment apparatus (10) is provided with a reaction tube (42) for treating a substrate (54), a quartz adaptor (44) for supporting the reaction tube (42), a nozzle (66) connected to the adaptor (44) for supplying a treatment gas into the reaction tube (42), and a heater (46) provided outside the reaction tube (42) for heating inside the reaction tube (42). The nozzle (66) is connected to an upper plane of the adaptor (44) in the reaction tube (42) at least a part which is of the nozzle (66) and is connected with the adaptor (44) is made of quartz and other nozzle parts are made of silicon carbide.

Abstract: Provided is a heat treatment furnace, which includes a processing vessel configured to accommodate at least one object to be processed, a heat insulating member configured to cover a periphery of the processing vessel, and a heating unit configured to be arranged along an inner peripheral surface of the heat insulating member. The heat insulating member includes an inner heat insulating member and an outer heat insulating member formed independently of the inner heat insulating member. The outer heat insulating member contains a finely-powdered compressed silica material, and at least an outer surface thereof is covered with an anti-scattering member configured to prevent the finely-powdered compressed silica material from being scattered.

Abstract: This invention discloses a reaction apparatus for wafer treatment, an electrostatic chuck and a wafer temperature control method, in the field of semiconductor processing. The electrostatic chuck comprises an insulating layer for supporting a wafer and a lamp array disposed in the insulating layer. Each lamp of the lamp array can be independently controlled to turn on and off and/or to adjust the output power. By controlling the on/off switch and/or output power of each lamp of the lamp array the temperature of the wafer held on the ESC is adjusted and temperature non-uniformity can be more favorably adjusted, greatly improving wafer temperature uniformity, particularly alleviating non-radial temperature non-uniformity.

Abstract: A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.

Abstract: A sealant curing apparatus is disclosed. In one embodiment, the apparatus includes a processing object panel, a panel supporting unit supporting the processing object panel and a voltage applying unit including a first electrode and a second electrode positioned on the panel supporting unit via the processing object panel interposed therebetween and having different polarities. The processing object panel includes: i) a conductive layer pattern including a heating unit that includes a lattice (grid) pattern, a connecting unit coupled to the first electrode and the second electrode, and a coupling unit connecting the heating unit and the connecting unit and ii) a sealant formed according to the heating unit.

Abstract: The invention concerns a dental furnace, with a furnace base and with a furnace hood, wherein the furnace hood includes a firing chamber for the accommodation of dental restorations, with a temperature sensor that records the temperature of the dental restoration and which is connected to a control device which controls the dental furnace, and the dental furnace (10) includes a drive unit (18) for the furnace hood (16) and the control device (30) controls the drive unit (18) based on the temperature recorded by the temperature sensor (20), namely opens the furnace hood.

Abstract: A vacuum oven or vacuum furnace is disclosed having a heat distribution sleeve that conforms to the shape of an interior heating chamber. The heat distribution sleeve may be of generally annular shape, like a ring, and located in a substantially regularly spaced and offset relationship from a heating element located within walls adjacent the interior heating chamber. The heat distribution sleeve includes a thermal conductive material which absorbs and re-radiates heat emitted from the heating element, thereby providing more consistent and regular radiation fields for heating treating a work piece that is loaded on a work holding tray and, upon the vacuum oven being in an operational position, the work piece is located within the furnace chamber.

Abstract: A control unit can select a large-number control zone model in which the number of control zones, which are independently controlled, is large, and a small-number control zone model in which the number of control zones, which are independently controlled, is small. When a temperature is increased or decreased, the control unit can select the small-number control zone model so as to control, based on signals from temperature sensors of the respective control zones C1 . . . C5 whose number is small, heaters located on the respective control zones C1 . . . C5. When a temperature is stabilized, the control unit can select the large-number control zone model so as to control, based on signals from the temperature sensors of the respective control zones C1 . . . C10 whose number is large, the heaters located on the respective control zones C1 . . . C10.

Abstract: Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to the object during a background heating mode, thereby selectively heating the object to at least generally produce a temperature rise throughout the object during background heating. A first surface of the object is heated in a pulsed heating mode by subjecting it to at least a first pulse of energy. Background heating is controlled in timed relation to the first pulse. A first temperature response of the object to the first energy pulse may be sensed and used to establish at least a second set of pulse parameters for at least a second energy pulse to at least partially produce a target condition.

Abstract: The present invention provides a vacuum heating/cooling apparatus capable of rapidly heating and also rapidly cooling only a substrate while a high vacuum degree is maintained after film-formation processing. The vacuum heating/cooling apparatus according to an embodiment of the present invention includes a vacuum chamber (1), a halogen lamp (2) which emits heating light, a quartz window (3) for allowing the heating light to enter the vacuum chamber (1), a substrate supporting base (9) having a cooling function, and a lift pin (13) which causes the substrate (5) to stand still at a heating position P3 and a cooling position P1 and moves the substrate (5) between the heating position P3 and the cooling position P1.

Abstract: Multi-lane, side-by-side, independently driven transport systems particularly useful for transfer on conveyor belts or finger/chains of thin work pieces, such as silicon wafers, through processing equipment for converting the wafers into solar cells, including UV pre-treaters, dopers, dryers, diffusion furnaces and metallization furnaces. The inventive multi-lane transport systems may employ wire mesh belts having a flying bridge wafer support system comprising longitudinally spaced carrier wire elements that support the wafers at their side edges at only point contacts, by means of opposed, inwardly inclined, downwardly slanted segments or wings. Alternately, finger drives comprising spaced-apart chains having inwardly projecting fingers may be used for transport of the wafers by side edge contact. Friction or sprocket drives having tensioner assemblies associa-ted therewith are used to move the transport belts or finger chains through the furnace zones.

Abstract: The invention relates to a dental firing or press furnace (10) that enables the production of at least one dental restoration part (62). The dental firing or press furnace is provided with a firing space (12) that is heatable with the aid of a heating device (22), preferably, a resistance heating device. A heat-conducting element (50) having a specific thermal conductivity of at least 100 W/mK is arranged on the floor of the firing space (12).

Abstract: A semiconductor manufacturing equipment is provided herein. The semiconductor manufacturing equipment includes a heater element configured to heat a wafer, a first connection part and a second connection part integrated with the heater element, a first electrode electrically contacted with and fixed to the first connection part on a first surface of the first electrode, and a second electrode electrically contacted with and fixed to the second connection part on a second surface of the second electrode. The second surface is perpendicular to the direction of the first surface, and the heater element produces heat by applying a voltage between the first electrode and the second electrode.

Abstract: In a first aspect, a first substrate processing system is provided that includes (1) a chamber having a plurality of opening through which a substrate may be transported; (2) a substrate carrier opener coupled to a first one of the plurality of openings; (3) a thermal processing chamber coupled to a second one of the plurality of openings; and (4) a wafer handler contained within the chamber, having a substrate clamping blade and a blade adapted to transport high temperature substrates.

Abstract: For a simplified method for heating a pre-warmed muffle used for dental ceramics in a dental furnace, wherein a saving of time in heating before the pressing and also a parallel heating of the muffles should be made possible, the following steps are suggested: a) heating of the muffle to a maximal temperature (Tmax), which is above the pressing temperature (Tpress), in which pressing is carried out, b) possibly keeping the muffle at a maximal temperature (Tmax) during a first pause (t-1), c) cooling of the muffle to a minimal temperature (Tmin), which is at most as high as the pressing temperature (Tpress), and d) keeping the muffle at a minimal temperature (Tmin) during a second pause (t2). In addition, a corresponding control device for the dental furnace and a furnace equipped with this kind of control device are produced.

Abstract: An integrated apparatus able to condition a dry low-temperature environment in a baking process includes a baking unit, a drying unit, and at least a dry air introducing part. The baking unit has a heating unit to heat a first room at a baking period. The drying unit includes a dryer for dehumidifying a second room thereof at a dry low-temperature environment-conditioning period by providing the second room a dry low-temperature air. The dry air introducing part located between the first room and the second room is to separate the first room and the second room at the baking period, and to introduce the dry low-temperature air from the second room to the first room at the dry low-temperature environment-conditioning period.

Abstract: Methods and apparatus for controlling the temperature of multi-zone heater in a process chamber are provided herein. In some embodiments, a method is provided to control a multi-zone heater disposed in a substrate support, wherein the multi-zone heater has a first zone and a second zone. In some embodiments, the method may include measuring a current drawn by the first zone at a first time; measuring a voltage drawn by the first zone at the first time; calculating the resistance of the first zone based upon the measured current and voltage drawn by the first zone at the first time; determining a temperature of the first zone based upon a predetermined relationship between the resistance and the temperature of the first zone; and adjusting the temperature of the first zone in response to the temperature determination.

Abstract: A disclosed substrate processing apparatus comprises a heat exchange plate configured to heat and/or cool the substrate; plural protrusions provided on the heat exchange plate so as to allow the substrate to be placed on the plural protrusions, leaving a gap between the substrate and the heat exchange plate; a suction portion configured to attract the substrate onto the plural protrusion by suction through plural holes formed in the heat exchange plate; and a partition member that is provided on the heat exchange plate and lower than the plural protrusions, wherein the partition member is configured to divide the gap into two or more regions including at least one of the holes so that at least one of the two or more regions is two-dimensionally closed by the partition member.

Abstract: The invention relates to a dental firing or press furnace (10) that enables the production of at least one dental restoration part (62). The dental firing or press furnace is provided with a firing space (12) that is heatable with the aid of a heating device (22), preferably, a resistance heating device. A heat-conducting element (50) having a specific thermal conductivity of at least 100 W/mK is arranged on the floor of the firing space (12).

Abstract: The invention relates to a dental furnace comprising a firing hood equipped with a heating device that is movably supported for the opening and closing of the dental furnace relative to a base intended for receiving a dental restoration part, and further comprising a heat detection device that is directed towards an area above the base, in particular towards one or more dental restoration parts, and further comprising a control or regulating device for the dental furnace that is coupled to the heat detection device, wherein the heat detection device is configured as a thermal imaging camera (30) which is directed towards the area above the base while the firing hood (12) is partially or completely opened, and which feeds an at least two-dimensional image in the form of a matrix of the one or more inserted dental restoration parts (60) to the control or regulating device and/or to a muffle (26) that is intended for the generation of the dental restoration parts (60).

Abstract: Embodiments of a lamphead and apparatus utilizing same are provided. In some embodiments, a lamphead for thermal processing may include a monolithic member having a plurality of coolant passages and a plurality of lamp passages and reflector cavities, wherein each lamp passage is configured to accommodate a lamp and each reflector cavity is shaped to act as a reflector or to receive a replaceable reflector for the lamp, and wherein the plurality of coolant passages are disposed proximate to the plurality of lamp passages; and at least one heat transfer member extending from the monolithic member into each coolant passage, wherein the at least one heat transfer member extends into each coolant passage up to the full height of each coolant passage. The lamphead may be disposed in an apparatus comprising a process chamber having a substrate support, wherein the lamphead is positioned to provide energy to the substrate support.

Abstract: A vacuum chuck and a process chamber equipped with the same are provided. The vacuum chuck assembly comprises a support body, a plurality of protrusions, a plurality of channels, at least one support member supporting the support body, at least one resilient member coupled with the support member, a hollow shaft supporting the support body, at least one electrical connector disposed through the hollow shaft, and an air-cooling apparatus. The support body has a support surface for holding a substrate (such as a wafer) thereon. The protrusions are formed on and project from the support surface for creating a gap between the substrate and the support surface. The channels are formed on the support surface for generating reduced pressure in the gap. The air-cooling apparatus is used for providing air cooling in the vicinity of the electrical connector.

Abstract: An infrared firing furnace includes a case-integrated cooling system to provide high performance cooling as the first step in the cooling process. The cooling system includes a cooling manifold integrated into, and made from, the same case material as the adjacent firing zone. As the cooling system is made from the same material as the rest of the case, it can handle being exposed to higher temperatures. The cooling system is positioned such that the plane of its outlet is at a specific clearance level relative to the product passing underneath. High pressure cooling jets of air are directed downward toward the products as they pass under the cooling manifold in order to quickly bring the temperature of the products down from the much higher firing temperature, and minimize the dwell time of the product at the higher temperature.