Abstract: A heater assembly with enhanced cooling pursuant to various embodiments described herein makes use of fluidic flow in the insulation or in the space used for insulation. By creating a natural convection or forced convection flow, the heater cools down faster, it can operate at lower temperatures and/or higher temperature precision, and it can improve temperature controllability by generating higher heat loss rates.

Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

Abstract: In an apparatus and process for treating wafer-shaped articles, a spin chuck holds a wafer-shaped article in a predetermined orientation relative to an upper surface of the spin chuck. A heating assembly comprises a housing containing at least one infrared heating element. The heating assembly is mounted above the upper surface of the spin chuck and adjacent a wafer-shaped article when mounted on the spin chuck. The housing also contains a conduit having an inlet connected to a source of cooling fluid and an outlet returning cooling fluid to the source of cooling fluid.

Abstract: A first flash heating is performed in which a flash lamp emits a first flashing light to a semiconductor wafer having been heated to a first preheating temperature equal to or lower than 650 degrees C. by a light emission from a halogen lamp so that the temperature of a surface of the semiconductor wafer reaches 1000 degrees C. or higher. Then, a second flash heating is performed in which a second flashing light is emitted to the semiconductor wafer having been further heated by a light emission of the halogen lamp. Performing the first flash heating can suppress diffusion of impurity in the subsequent second flash heating. In the second flash heating, the impurity is activated and introduced crystal defects are recovered.

Abstract: A method of lowering a temperature of a substrate table uses a substrate W processing system including a first substrate table 2b; one or more processing chambers 1b, in each of which the first substrate table 2b is disposed, the processing chamber being configured to perform a predetermined process, with the substrate being placed on the first substrate table 2b; a substrate transfer apparatus 31 configured to transfer the substrate to the processing chamber 1b; a transfer chamber in which the substrate transfer apparatus 31 is disposed; and a second substrate table configured to cool the substrate. The method of lowering a temperature of a substrate table comprises the steps of first transfer in which the substrate W placed on the first substrate table 2b is transferred to the second substrate table by the substrate transfer apparatus 31, and second transfer in which the substrate placed on the second substrate table is transferred to the first substrate table 2b.

Abstract: Provided is an apparatus for manufacturing a compound semiconductor, which forms a compound semiconductor layer using a metal-organic chemical vapor deposition method. The apparatus is characterized in that: the apparatus is provided with a reaction container, a holder, which is disposed in the reaction container and has placed thereon a subject, on which the layer is to be formed, the subject having facing up the subject surface where the layer is to be formed, and a raw material supply port, through which the raw material gas of the compound semiconductor is supplied to the inside of the reaction container from the outside; the holder is in contact with the lower surface of the subject, the contact being inside of the outer circumferential portion of the subject to the center of the upper surface of the holder; and that the holder has a supporting portion, which supports the subject such that a predetermined interval is maintained between the upper surface of the holder and the lower surface of the subject.

Abstract: A semiconductor substrate processing apparatus (1), comprising a substrate support assembly (30), including a substrate support (32) defining an outer support surface (34) for supporting a substrate or substrate carrier (24) thereon, and a heater (50) comprising a heat dissipating portion (54) that is disposed within the substrate support (32) and that extends underneath and substantially parallel to the support surface (34), said substrate support (32) being rotatably mounted around a rotation axis (L) that extends through said support surface (34), such that the support surface (34) is rotatable relative to the heat dissipating portion (54) of the heater (50).

Abstract: Disclosed are cooking devices and assemblies that employ infrared radiant energy to cook food. One cooking assembly includes a cooker including a body having a cooker lid configured to engage a top of the body, an inner layer arranged within the body and defining a heating cavity within the cooker, a heating element arranged within the heating cavity and configured to heat the heating cavity, and a cooking vessel made of a transmissive material and configured to be arranged within the heating cavity, the cooking vessel defines a cooking cavity configured to receive food therein, wherein the heating element convectively heats the cooking vessel and infrared radiant energy is thereby emitted from interior surfaces of the cooking vessel into the cooking cavity to cook the food.

Abstract: The installation (10) is adapted for the heat treatment of objects, such as plastic preforms (17), and comprises a reflective device exhibiting a plurality of elongated and opened IR-reflective cavities stacked one onto the other according to a stacking axis and arranged to lodge elongated IR lamps (16) within, where the aperture of each cavity faces generally a main axis parallel to the stacking axis along which the object would be placed. The reflective device (20) further comprises protrusions separating the cavities one to the other and extending generally transversal/transverse to the stacking axis, the reflective device being made as at least one integral block of a heat-conductive material. The cavities may each comprise a curved bottom portion and two opposite side surfaces provided with respective longitudinal breaks of slope at a junction with the curved bottom.

Abstract: Embodiments of the present invention provide thermal processing chambers including a drive mechanism and a heating assembly disposed on opposite sides of a substrate support assembly. Particularly, the heating assembly is disposed below the substrate support assembly to process a substrate with a device side facing up and the drive mechanism is disposed above the substrate assembly.

Abstract: A vacuum oven or vacuum furnace is disclosed having an energy distribution sleeve that conforms to the shape of an interior heating chamber. The energy distribution sleeve may be of generally annular shape, like a ring, and located in a substantially regularly spaced and offset relationship from a heating element located within walls adjacent the interior heating chamber. The energy distribution sleeve includes a thermal conductive material which absorbs and re-radiates heat emitted from the heating element, thereby providing more consistent and regular radiation fields for heat treating a work piece that is loaded on a work holding tray and, upon the vacuum oven being in an operational position, the work piece is located within the furnace chamber.

Abstract: A heat treatment apparatus wherein a nozzle is accurately provided on an adaptor to prevent the nozzle from interfering with other part items and a possibility of breakage due to heat expansion of the nozzle can be reduced. The heat treatment apparatus (10) is provided with a reaction tube (42) for treating a substrate (54), a quartz adaptor (44) for supporting the reaction tube (42), a nozzle (66) connected to the adaptor (44) for supplying a treatment gas into the reaction tube (42), and a heater (46) provided outside the reaction tube (42) for heating inside the reaction tube (42). The nozzle (66) is connected to an upper plane of the adaptor (44) in the reaction tube (42) at least a part which is of the nozzle (66) and is connected with the adaptor (44) is made of quartz and other nozzle parts are made of silicon carbide.

Abstract: Provided is a heat treatment furnace, which includes a processing vessel configured to accommodate at least one object to be processed, a heat insulating member configured to cover a periphery of the processing vessel, and a heating unit configured to be arranged along an inner peripheral surface of the heat insulating member. The heat insulating member includes an inner heat insulating member and an outer heat insulating member formed independently of the inner heat insulating member. The outer heat insulating member contains a finely-powdered compressed silica material, and at least an outer surface thereof is covered with an anti-scattering member configured to prevent the finely-powdered compressed silica material from being scattered.

Abstract: This invention discloses a reaction apparatus for wafer treatment, an electrostatic chuck and a wafer temperature control method, in the field of semiconductor processing. The electrostatic chuck comprises an insulating layer for supporting a wafer and a lamp array disposed in the insulating layer. Each lamp of the lamp array can be independently controlled to turn on and off and/or to adjust the output power. By controlling the on/off switch and/or output power of each lamp of the lamp array the temperature of the wafer held on the ESC is adjusted and temperature non-uniformity can be more favorably adjusted, greatly improving wafer temperature uniformity, particularly alleviating non-radial temperature non-uniformity.

Abstract: A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.

Abstract: A sealant curing apparatus is disclosed. In one embodiment, the apparatus includes a processing object panel, a panel supporting unit supporting the processing object panel and a voltage applying unit including a first electrode and a second electrode positioned on the panel supporting unit via the processing object panel interposed therebetween and having different polarities. The processing object panel includes: i) a conductive layer pattern including a heating unit that includes a lattice (grid) pattern, a connecting unit coupled to the first electrode and the second electrode, and a coupling unit connecting the heating unit and the connecting unit and ii) a sealant formed according to the heating unit.

Abstract: The invention concerns a dental furnace, with a furnace base and with a furnace hood, wherein the furnace hood includes a firing chamber for the accommodation of dental restorations, with a temperature sensor that records the temperature of the dental restoration and which is connected to a control device which controls the dental furnace, and the dental furnace (10) includes a drive unit (18) for the furnace hood (16) and the control device (30) controls the drive unit (18) based on the temperature recorded by the temperature sensor (20), namely opens the furnace hood.

Abstract: A vacuum oven or vacuum furnace is disclosed having a heat distribution sleeve that conforms to the shape of an interior heating chamber. The heat distribution sleeve may be of generally annular shape, like a ring, and located in a substantially regularly spaced and offset relationship from a heating element located within walls adjacent the interior heating chamber. The heat distribution sleeve includes a thermal conductive material which absorbs and re-radiates heat emitted from the heating element, thereby providing more consistent and regular radiation fields for heating treating a work piece that is loaded on a work holding tray and, upon the vacuum oven being in an operational position, the work piece is located within the furnace chamber.

Abstract: Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to the object during a background heating mode, thereby selectively heating the object to at least generally produce a temperature rise throughout the object during background heating. A first surface of the object is heated in a pulsed heating mode by subjecting it to at least a first pulse of energy. Background heating is controlled in timed relation to the first pulse. A first temperature response of the object to the first energy pulse may be sensed and used to establish at least a second set of pulse parameters for at least a second energy pulse to at least partially produce a target condition.

Abstract: A control unit can select a large-number control zone model in which the number of control zones, which are independently controlled, is large, and a small-number control zone model in which the number of control zones, which are independently controlled, is small. When a temperature is increased or decreased, the control unit can select the small-number control zone model so as to control, based on signals from temperature sensors of the respective control zones C1 . . . C5 whose number is small, heaters located on the respective control zones C1 . . . C5. When a temperature is stabilized, the control unit can select the large-number control zone model so as to control, based on signals from the temperature sensors of the respective control zones C1 . . . C10 whose number is large, the heaters located on the respective control zones C1 . . . C10.

Abstract: The present invention provides a vacuum heating/cooling apparatus capable of rapidly heating and also rapidly cooling only a substrate while a high vacuum degree is maintained after film-formation processing. The vacuum heating/cooling apparatus according to an embodiment of the present invention includes a vacuum chamber (1), a halogen lamp (2) which emits heating light, a quartz window (3) for allowing the heating light to enter the vacuum chamber (1), a substrate supporting base (9) having a cooling function, and a lift pin (13) which causes the substrate (5) to stand still at a heating position P3 and a cooling position P1 and moves the substrate (5) between the heating position P3 and the cooling position P1.

Abstract: Multi-lane, side-by-side, independently driven transport systems particularly useful for transfer on conveyor belts or finger/chains of thin work pieces, such as silicon wafers, through processing equipment for converting the wafers into solar cells, including UV pre-treaters, dopers, dryers, diffusion furnaces and metallization furnaces. The inventive multi-lane transport systems may employ wire mesh belts having a flying bridge wafer support system comprising longitudinally spaced carrier wire elements that support the wafers at their side edges at only point contacts, by means of opposed, inwardly inclined, downwardly slanted segments or wings. Alternately, finger drives comprising spaced-apart chains having inwardly projecting fingers may be used for transport of the wafers by side edge contact. Friction or sprocket drives having tensioner assemblies associa-ted therewith are used to move the transport belts or finger chains through the furnace zones.

Abstract: The invention relates to a dental firing or press furnace (10) that enables the production of at least one dental restoration part (62). The dental firing or press furnace is provided with a firing space (12) that is heatable with the aid of a heating device (22), preferably, a resistance heating device. A heat-conducting element (50) having a specific thermal conductivity of at least 100 W/mK is arranged on the floor of the firing space (12).

Abstract: In a first aspect, a first substrate processing system is provided that includes (1) a chamber having a plurality of opening through which a substrate may be transported; (2) a substrate carrier opener coupled to a first one of the plurality of openings; (3) a thermal processing chamber coupled to a second one of the plurality of openings; and (4) a wafer handler contained within the chamber, having a substrate clamping blade and a blade adapted to transport high temperature substrates.

Abstract: A semiconductor manufacturing equipment is provided herein. The semiconductor manufacturing equipment includes a heater element configured to heat a wafer, a first connection part and a second connection part integrated with the heater element, a first electrode electrically contacted with and fixed to the first connection part on a first surface of the first electrode, and a second electrode electrically contacted with and fixed to the second connection part on a second surface of the second electrode. The second surface is perpendicular to the direction of the first surface, and the heater element produces heat by applying a voltage between the first electrode and the second electrode.

Abstract: For a simplified method for heating a pre-warmed muffle used for dental ceramics in a dental furnace, wherein a saving of time in heating before the pressing and also a parallel heating of the muffles should be made possible, the following steps are suggested: a) heating of the muffle to a maximal temperature (Tmax), which is above the pressing temperature (Tpress), in which pressing is carried out, b) possibly keeping the muffle at a maximal temperature (Tmax) during a first pause (t-1), c) cooling of the muffle to a minimal temperature (Tmin), which is at most as high as the pressing temperature (Tpress), and d) keeping the muffle at a minimal temperature (Tmin) during a second pause (t2). In addition, a corresponding control device for the dental furnace and a furnace equipped with this kind of control device are produced.

Abstract: An integrated apparatus able to condition a dry low-temperature environment in a baking process includes a baking unit, a drying unit, and at least a dry air introducing part. The baking unit has a heating unit to heat a first room at a baking period. The drying unit includes a dryer for dehumidifying a second room thereof at a dry low-temperature environment-conditioning period by providing the second room a dry low-temperature air. The dry air introducing part located between the first room and the second room is to separate the first room and the second room at the baking period, and to introduce the dry low-temperature air from the second room to the first room at the dry low-temperature environment-conditioning period.

Abstract: Methods and apparatus for controlling the temperature of multi-zone heater in a process chamber are provided herein. In some embodiments, a method is provided to control a multi-zone heater disposed in a substrate support, wherein the multi-zone heater has a first zone and a second zone. In some embodiments, the method may include measuring a current drawn by the first zone at a first time; measuring a voltage drawn by the first zone at the first time; calculating the resistance of the first zone based upon the measured current and voltage drawn by the first zone at the first time; determining a temperature of the first zone based upon a predetermined relationship between the resistance and the temperature of the first zone; and adjusting the temperature of the first zone in response to the temperature determination.

Abstract: A disclosed substrate processing apparatus comprises a heat exchange plate configured to heat and/or cool the substrate; plural protrusions provided on the heat exchange plate so as to allow the substrate to be placed on the plural protrusions, leaving a gap between the substrate and the heat exchange plate; a suction portion configured to attract the substrate onto the plural protrusion by suction through plural holes formed in the heat exchange plate; and a partition member that is provided on the heat exchange plate and lower than the plural protrusions, wherein the partition member is configured to divide the gap into two or more regions including at least one of the holes so that at least one of the two or more regions is two-dimensionally closed by the partition member.

Abstract: The invention relates to a dental firing or press furnace (10) that enables the production of at least one dental restoration part (62). The dental firing or press furnace is provided with a firing space (12) that is heatable with the aid of a heating device (22), preferably, a resistance heating device. A heat-conducting element (50) having a specific thermal conductivity of at least 100 W/mK is arranged on the floor of the firing space (12).

Abstract: The invention relates to a dental furnace comprising a firing hood equipped with a heating device that is movably supported for the opening and closing of the dental furnace relative to a base intended for receiving a dental restoration part, and further comprising a heat detection device that is directed towards an area above the base, in particular towards one or more dental restoration parts, and further comprising a control or regulating device for the dental furnace that is coupled to the heat detection device, wherein the heat detection device is configured as a thermal imaging camera (30) which is directed towards the area above the base while the firing hood (12) is partially or completely opened, and which feeds an at least two-dimensional image in the form of a matrix of the one or more inserted dental restoration parts (60) to the control or regulating device and/or to a muffle (26) that is intended for the generation of the dental restoration parts (60).

Abstract: A vacuum chuck and a process chamber equipped with the same are provided. The vacuum chuck assembly comprises a support body, a plurality of protrusions, a plurality of channels, at least one support member supporting the support body, at least one resilient member coupled with the support member, a hollow shaft supporting the support body, at least one electrical connector disposed through the hollow shaft, and an air-cooling apparatus. The support body has a support surface for holding a substrate (such as a wafer) thereon. The protrusions are formed on and project from the support surface for creating a gap between the substrate and the support surface. The channels are formed on the support surface for generating reduced pressure in the gap. The air-cooling apparatus is used for providing air cooling in the vicinity of the electrical connector.

Abstract: Embodiments of a lamphead and apparatus utilizing same are provided. In some embodiments, a lamphead for thermal processing may include a monolithic member having a plurality of coolant passages and a plurality of lamp passages and reflector cavities, wherein each lamp passage is configured to accommodate a lamp and each reflector cavity is shaped to act as a reflector or to receive a replaceable reflector for the lamp, and wherein the plurality of coolant passages are disposed proximate to the plurality of lamp passages; and at least one heat transfer member extending from the monolithic member into each coolant passage, wherein the at least one heat transfer member extends into each coolant passage up to the full height of each coolant passage. The lamphead may be disposed in an apparatus comprising a process chamber having a substrate support, wherein the lamphead is positioned to provide energy to the substrate support.

Abstract: An infrared firing furnace includes a case-integrated cooling system to provide high performance cooling as the first step in the cooling process. The cooling system includes a cooling manifold integrated into, and made from, the same case material as the adjacent firing zone. As the cooling system is made from the same material as the rest of the case, it can handle being exposed to higher temperatures. The cooling system is positioned such that the plane of its outlet is at a specific clearance level relative to the product passing underneath. High pressure cooling jets of air are directed downward toward the products as they pass under the cooling manifold in order to quickly bring the temperature of the products down from the much higher firing temperature, and minimize the dwell time of the product at the higher temperature.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract: A method and apparatus for thermally processing a substrate is provided. In one embodiment, a method for thermally treating a substrate is provided. The method includes transferring a substrate at a first temperature to a substrate support in a chamber, the chamber having a heating source and a cooling source disposed in opposing portions of the chamber, heating the substrate to a second temperature during a first time period while the substrate is disposed on the substrate support, heating the substrate to a third temperature during a second time period while the substrate is disposed on the substrate support, and cooling the substrate in the chamber to a fourth temperature that is substantially equal to the second temperature during the second time period.

Abstract: A apparatus and method of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP). An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. The front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. The wafer is thermally monitored for temperature and reflectivity from the side of the reflector. When the lamps are above the wafer, an edge ring supports the wafer in its edge exclusion zone. Alternatively, a reactor includes upwardly directed lamps and a reflector above and facing the front side of the wafer.

Abstract: An oven rack is received in an oven above a lower surface of the chamber and having a bake element mounted in the chamber either above or below the lower surface. The oven rack is configured to support cooking ware on one of the lower surface of the oven chamber or on rack shelf portions provided in sidewalls of the chamber. The rack includes a first portion having a substantially planar top surface, a second portion having a substantially planar lower surface spaced from the top surface and it is also configured to support the rack in one of the rack shelf portions or on the lower surface of the oven chamber. First and second walls extend between these first and second portions whereby the walls have a first dimension slightly greater than a height from the bottom surface of the oven chamber to a top of the bake element when the bake element is mounted above the lower surface.

Abstract: When a semiconductor wafer is preheated by halogen lamps, the temperature of a peripheral portion of the semiconductor wafer is lower than that of a central portion thereof. A laser light emitting part disposed immediately under the center of the semiconductor wafer is rotated about the center line of the semiconductor wafer, while laser light is directed from the laser light emitting part toward the peripheral portion of the semiconductor wafer. Thus, the irradiation spot of the laser light exiting the laser light emitting part swirls around along the peripheral portion of the back surface of the semiconductor wafer so as to draw a circular trajectory. As a result, the entire peripheral portion of the semiconductor wafer at a relatively low temperature is uniformly heated. This achieves a uniform in-plane temperature distribution of the semiconductor wafer.

Abstract: A device for making a muffle, with which dental restoration parts can be produced with the aid of an embedding compound, at least one press blank and a pressing device, the device having a muffle base, a tubular sleeve surrounding the muffle base and at least one muffle insert which is arranged on the muffle base and can be separated from it. At least two cylindrical press-channel forming elements (16, 18, 20) extend parallel to one another and spaced apart from one another from a flat-formed portion of the muffle insert (12), which can be burned out at least with respect to the forming elements, which elements are formed in a closed manner, and in particular with thin walls, at least on one free end face opposite from the flat-formed portion (14).

Abstract: A nozzle housing assembly, which is used in a convection heating furnace for a heat treatable glass sheet. The nozzle housing assembly comprises an elongated enclosure, at least one elongated heating resistance in the enclosure for heating convection air, and orifices in a bottom surface of the enclosure for blasting heated convection air against the glass sheet. The enclosure is divided with a flow-throttling partition into a top supply duct and a bottom nozzle box, the heating resistances being housed in the latter. Flow-throttling openings present in the partition are positioned to comply with the location and shape of the heating resistances.

Abstract: Apparatus for processing a substrate are provided herein. In some embodiments, a substrate support includes a substrate support surface and a shaft; an RF electrode disposed in the substrate support proximate the substrate support surface to receive RF current from an RF source; a heater disposed proximate the substrate support surface to provide heat to a substrate when disposed on the substrate support surface, the heater having one or more conductive lines to provide power to the heater; a thermocouple to measure the temperature of a substrate when disposed on the substrate support surface; and a conductive element having an interior volume with the one or more conductive lines and the thermocouple disposed through the interior volume, the conductive element coupled to the RF electrode and having an electric field of about zero in the interior volume when RF current is flowed through the conductive element.

Abstract: A rapid thermal process reactor includes a vessel having a dome assembly. The vessel bounds a reactor chamber for rapid thermal processing of one or more substrates. The dome assembly includes a low profile dome and a flange surrounding and abutting the low profile dome. The flange includes a top surface; a bottom surface, removed from and opposite the top surface; an outer circumferential edge surface connecting the top surface and the bottom surface; and an inner edge surface, opposite and removed from said outer circumferential edge, including a portion abutting said low profile dome. The rapid thermal process reactor also includes a radiant heat source; a gas ring mounted about a sidewall of the vessel; a gas ring shield mounted as part of the sidewall of the vessel; a clamp ring to clamp the dome assembly in place; and a clamp ring shield mounted on the clamp ring.

Abstract: A substrate processing apparatus includes heat treatment apparatus blocks each comprised of stacked heat treatment apparatuses HP each having temperature adjustment mechanism 70 configured to be able to move a substrate to a heating mechanism and adjust the temperature of the substrate, and includes a cooling liquid supply mechanism 81 that supplies a cooling liquid set for a predetermined temperature to be supplied for each of the heat treatment apparatus blocks HPB, a supply mechanism 99 which branches the cooling liquid supplied from cooling liquid supply mechanism 81 and supplies the cooling liquid to each temperature adjustment mechanism 70 of heating mechanisms in one of the heat treatment apparatus blocks.

Abstract: Apparatus and methods for detecting substrate warping during RTP processing are provided. In one embodiment, one or more beams of light are provided above and across the substrate being processed. In this embodiment, the amount of beam blockage correlates to the amount of substrate warping. In another embodiment, a beam of light is reflected off of a substrate during processing. In this embodiment, the amount of movement of the beam correlates to the amount of substrate warping. In yet another embodiment, a region of a substrate is illuminated during processing. In this embodiment, images of the illuminated region are analyzed to determine the amount of substrate warping.

Abstract: A method of detecting an abnormal placement of a substrate W, which is carried out when a substrate W placed on a substrate table 3, in which a heater 6a, 6b is disposed, is processed by heating. The method of detecting an abnormal placement of the substrate comprises the steps of: during processing of the substrate W, based on information about an electric output to the heater 6a, 6b or information about a measured temperature of the substrate table 3, detecting of a maximum value and a minimum value of the electric output or the measured temperature, or an integrated value of the electric output or the measured temperature; and judging of the abnormal placement of the substrate based on the maximum value and the minimum value detected, or the integrated value detected.

Abstract: Methods and apparatus for controlling the temperature of multi-zone heater in a process chamber are provided herein. In some embodiments, a method is provided to control a multi-zone heater disposed in a substrate support, wherein the multi-zone heater has a first zone and a second zone. In some embodiments, the method may include measuring a current drawn by the first zone at a first time; measuring a voltage drawn by the first zone at the first time; calculating the resistance of the first zone based upon the measured current and voltage drawn by the first zone at the first time; determining a temperature of the first zone based upon a predetermined relationship between the resistance and the temperature of the first zone; and adjusting the temperature of the first zone in response to the temperature determination.

Abstract: A semiconductor furnace suitable for chemical vapor deposition processing of wafers. The furnace includes a thermal reaction chamber having a top, a bottom, a sidewall, and an internal cavity for removably holding a batch of vertically stacked wafers. A heating system is provided that includes a plurality of rotatable heaters arranged and operative to heat the chamber. In one embodiment, spacing between the sidewall heaters is adjustable. The heating system controls temperature variations within the chamber and promotes uniform film deposit thickness on the wafers.

Abstract: A method and apparatus for rapid thermal annealing comprising a plurality of lamps affixed to a lid of the chamber that provide at least one wavelength of light, a laser source extending into the chamber, a substrate support positioned within a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber. A method and apparatus for rapid thermal annealing comprising a plurality of lamps comprising regional control of the lamps and a cooling gas distribution system affixed to a lid of the chamber, a heated substrate support with magnetic levitation extending through a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber.

Abstract: An electrostatic chuck including a metal base having a through hole; a ceramic body covering the through hole; a suction electrode provided in the ceramic body; and a heating element provided in the ceramic body. A projection region defined by projecting the through hole toward the ceramic body is differentiated from an outer region which is determined by magnifying the projection region at a similarity ratio of three while setting an areal center of gravity of the projection region as a center of similarity, but excluding an interior of the projection region. Furthermore, the heating element is arranged such that a heating value per unit area in the projection region is 50% or less of a heating value per unit area in the outer region.