Abstract: A lightwave oven for heating food in a cooking chamber includes an oven housing, a drawer that can be moved out and in through an opening in the oven housing and has a bottom plate, side walls, and a rear wall that bound the cooking chamber, and a front plate to close the opening in the oven housing. A top plate is disposed above the drawer. The top plate can be moved relative to the drawer in the oven housing, rests on the drawer when in an operating position, and, as a result, bounds the cooking chamber of the drawer from above. Such a lightwave oven is configured to simplify and make easier the cleaning of the cooking chamber, and can be constructed cost-effectively and, furthermore, can be used flexibly.

Abstract: A counter-top cooker includes a base, a cooking chamber having a top end and a bottom end supported on the base, and a power head attached to the top end of the cooking chamber. The power head includes a heating element and a fan for directing airflow over the heating element and into the cooking chamber. The cooker also includes another heating element provided in the cooking chamber proximate the bottom end of the cooking chamber.

Abstract: A vacuum oven for decontaminating items, a system incorporating multiple such vacuum ovens and a method of operating such system are provided. The ovens are portable. They can have a vacuum drawn in them and can be heated by being coupled to a vacuum and a power source, respectively at a first location and then be decoupled from the vacuum and power sources and moved to a second location such as a glove box or clean room while still maintaining a vacuum.

Abstract: An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

Abstract: A heated substrate support and method for making the same is generally provided. In one embodiment, a heated support includes a first and second plates having a heating element disposed therebetween. The heating element is biased against the first plate to provide good heat transfer therewith. In another embodiment, a heated support includes a first metallic plate coupled to a second metallic plate and sandwiching at least one guide therebetween. A resistive heating element is laterally retained by the guide relative to the first plate. In another aspect of the invention, a heating chamber for heating a substrate is provided. In one embodiment, the heating chamber includes walls defining an interior volume and a plurality of heated support plates coupled to the walls. The support plates are generally stacked parallel to each other within the interior volume. A heating element is urged against each first support plate.

Abstract: A plasma processing apparatus capable of processing the surface of a workpiece more precisely is provided. The plasma processing apparatus for supplying a gas between a sample and a sample table to generate plasma for processing the sample, comprises an adjusting device for changing a pressure supplied to a central side of the sample and a pressure of the gas supplied to an outer peripheral side as processing of the sample progresses.

Abstract: A thermal processing system performs predetermined thermal processing on an approximately circular to-be-processed object, by applying radiant heat to the to-be-processed object by means of a heating lamp system. The heating lamp system comprises a plurality of lamps disposed concentrically so as to correspond to the to-be-processed object. The plurality of lamps are controlled individually for respective zones of the to-be-processed object.

Abstract: A housing is mounted to a slide that transports a series of preforms downward under the influence of gravity through a pre-heating apparatus toward a reheat blow molding machine. The housing is coupled to the slide so that a selected portion of each of the series of preforms is shielded from the general enviroment, and heating elements and directing elements are fixed within the housing so that heat from the heating elements is directed toward the selected portion of each series of preforms as the preforms desend down the slide to achieve a persistent thermal gradient in the preforms prior to the re-heating and blow-molding of the preform.

Abstract: A substrate support ring has a band having an inner perimeter that at least partially surrounds a periphery of the substrate. The band has a radiation absorption surface. A lip extends radially inwardly from the inner perimeter of the band to support the substrate. The band and lip can be formed from silicon carbide, and the radiation absorption surface can be an oxidized layer of silicon carbide. In one version, the band and lip have a combined thermal mass Tm, and the radiation absorption surface has an absorptivity A and a surface area Sa, such that the ratio (A×Sa)/Tm is from about 4×10?5 m2K/J to about 9×10?4 m2K/J.

Abstract: A thermal processing system for heating a to-be-processed object while rotating the to-be-processed object by a placement part, and for performing thermal processing on the to-be-processed object by supplying a predetermined gas into a processing chamber. An outer ring part provided outside the processing chamber and an inner ring part provided inside the processing chamber have pluralities of circumferentially arranged magnetic poles. The magnetic poles apply magnetic forces between the outer ring part and inner ring part so that the inner ring part will follow the rotation of the outer ring part. The number of magnetic poles of the outer ring part and inner ring part are selected to achieve an allowable angular error when between the outer ring part and inner ring part during rotation.

Abstract: A process for annealing large-area multilayer bodies by supplying a quantity of energy at an annealing rate of at least 1° C./s. To suppress temperature inhomogeneities during the annealing, different partial quantities of the quantity of energy are supplied to the layers of the multilayer body with a local and temporal resolution. The multilayer body is annealed in a container which has a base and a cover made from glass-ceramic. The process is used to produce a thin-film solar module.

Abstract: A plurality of flash lamps are covered with a reflector. Optical fiber members are attached to the reflector on portions located immediately above the flash lamps. When the flash lamps emit flash light toward a semiconductor wafer, the optical fiber members partially guide the emitted light so that a CCD measures the intensity of light emitted from each of the plurality of flash lamps. A computer detects the emission state of each of the plurality of flash lamps on the basis of a result of measurement. At this time, the computer compares standard luminous intensity obtained when the irradiation state on the semiconductor wafer satisfies a prescribed criterion with the luminous intensity in actual processing for detecting the emission states of the plurality of flash lamps. Thus provided is a thermal processing apparatus capable of reliably and simply detecting deterioration of lamps.

Abstract: An infrared die oven has a die cradle for holding a die. A thermocouple is positioned within the die cradle to maintain it in direct contact with the die. A controller connected to the thermocouple continually reads the temperature of the die. When the die reaches a threshold temperature, the intensity of an infrared heating elements in the oven is reduced. When the die reaches the desired temperature, the controller continuously adjusts the intensity of the heater to maintain the die at the desired temperature.

Abstract: A system and method for isothermally distributing a temperature across a semiconductor device. A furnace assembly is provided, which includes a processing tube configured to removably receive a wafer carrier having a full compliment of semiconductor wafers. A heating assembly is provided which can include a heating element positioned to heat air or other gases allowed to enter the process tube. The furnace assembly and process tube are capable of being vertically raised and lowered into a position enclosing the heating assembly within the process tube. Once the heating assembly forms a seal with the process tube, the process tube is exhausted and purged of air. Gas is then allowed to flow into the process tube and exchange heat with the heating element. The heated gas circulates through the process tube to convectively change the temperature of the wafers.

Abstract: A vacuum oven with heat transfer fluid conduits. The oven of the invention generally includes a shell into which a removable rack may be placed. The rack has at least one plate which may be heated or cooled by a plate fluid conduit in contact with the plate and through which a heating or cooling fluid may be passed. Work pieces may be loaded in the rack, the rack placed in the shell, the shell sealed, and a vacuum drawn within the shell. The work pieces loaded on the rack are primarily heated and cooled by conductive and radiant heat transfer because of the limited amount of thermally conductive gases within the shell.

Abstract: An apparatus for processing a semiconductor substrate, including a process chamber having a plurality of walls and a substrate support to support the substrate within the process chamber. A radiative heat source is positioned outside the process chamber to heat the substrate through the walls when the substrate is positioned on the substrate support. In some embodiments, lenses are positioned between the heat source and the substrate to focus or diffuse radiation from the heat source and thereby selectively alter the radiation intensity incident on certain portions of the substrate. In other embodiments, diffusing surfaces are positioned between the heat source and the substrate to diffuse radiation from the heat source and thereby selectively reduce the radiation intensity incident on certain portions of the substrate.

Abstract: A heat treatment apparatus achieves a uniform and rapid temperature rise of an object to be processed. A plurality of double-end lamps heat the object to be processed so as to apply a heat treatment process to the object. A plurality of reflectors reflect radiation heat of the double-end lamps toward the object to be processed. Each of the double-end lamps includes a rectilinear light-emitting part and at least two double-end lamps among the plurality of double-end lamps are arranged along a longitudinal direction of the light-emitting part, or each of the double-end lamps includes a rectilinear light-emitting part and the plurality of double-end lamps are arranged so that the light-emitting parts are parallel to each other and positioned in at least two stages.

Abstract: A continuous infrared oven and an infrared element therefor wherein the source and return terminals of the element are located on the same lateral side of the oven conveyor and are both accessible through the same oven side wall.

Abstract: The disclosed invention relates to sterilization by infrared radiation to eliminate pathogenic bacteria such as Salmonella, E. Coli 0157:H7 and E. Coli (EXEC) from articles such as medical, dental and veterinary instruments, as well as from tableware and eating utensils. The invention further relates to sterilization of soil, military and agriculture equipment to eliminate pathogenic bacteria such as hepatitis, AIDS, and anthrax, and prions such as mad cow disease using infrared radiation. Sterilization is performed by exposing the article to infrared radiation generated from heating elements positioned in an enclosed chamber.

Abstract: Emissivity of a substrate is measured at least before the substrate is heated, heating operation of the substrate is controlled under a heating condition corresponding to the emissivity, and the substrate is processed.

Abstract: An electric heater (2) is arranged for location in an oven (4) intermediate a cavity (6) of the oven and a flue arrangement (8) for venting the cavity (6). The heater (2) comprises a dish-like support (14) containing at least one electric heating element (22) and having a first face (24) open to the cavity (6) and a second face (16; 18) having an aperture (26) adapted to interface with the flue arrangement (8). Catalyst means (28) is provided incorporated in the heater (2).

Abstract: An apparatus and method for heating substrates, such as semiconductor wafers. A radiation energy source is arranged proximate to a reflector to direct radiation towards a window providing optical access to a processing chamber. A lens positioned outside of the window focuses the radiation emitted from the radiation energy source and reflector and directs it through the window. The focused radiation energy can be used to directly or indirectly heat a semiconductor wafer disposed the processing chamber.

Abstract: A semiconductor wafer is held by support pins horizontally. A susceptor and a heating plate are moved upwardly so that the semiconductor wafer is transferred from the support pins to the susceptor. At this time, a gas layer is sandwiched between the upper surface of the susceptor and the lower surface of the semiconductor wafer to cause the semiconductor wafer to float over the upper surface of the susceptor for about seventy seconds immediately after the semiconductor wafer is mounted on the upper surface of the susceptor. Then, flash lamps are lit up to perform flash heating while the semiconductor wafer is floating over the upper surface of the susceptor. Even when flashlight irradiation causes rapid thermal expansion of the wafer surface, the semiconductor wafer does not suffer a great stress. This can prevent the semiconductor wafer from breaking.

Abstract: In a light diffuser, a strong light diffusion processing is performed to a lamp corresponding part located in a vertical immediate downward direction of each of a plurality of flash lamps, and a weak light diffusion processing is performed to an inter-lamp corresponding part located between lamp corresponding parts adjacent to each other. Thereby, the light transmittance of the lamp corresponding part is lower than that of the inter-lamp corresponding part. Light that is emitted from each of the flash lamps and directed to a vertical immediate downward direction is diffused intensely, while reducing the degree of light diffusion at a location immediately below space between the adjacent flash lamps, thereby improving in-plane uniformity of illumination distribution on a semiconductor wafer. This enables to provide a thermal processing apparatus capable of improving in-plane uniformity of illumination distribution on a substrate.

Abstract: A method for thermally processing a substrate provides a target substrate temperature and generates a move profile of the substrate within a thermal processing system. An amount of heat is provided to the substrate, and one or more temperatures associated with one or more respective locations on the substrate are measured. A predicted temperature profile is further generated, wherein a predicted temperature of the substrate is based on the amount of heat provided and the one or more measured temperatures. The amount of heat provided to the substrate is further regulated, based on the predicted temperature profile, wherein the substrate is thermally processed generally according to the intended substrate temperature profile. The amount of heat provided to the substrate can be further regulated by controlling a position of the substrate within the thermal processing system.

Abstract: A method for heat treating a multilayer semiconductor wafer having a central region and a peripheral edge each having a surface. The method includes thermally treating selected portions of the peripheral edge to compensate for local differences in heat absorption. This establishes a substantially equivalent temperature over both the surface of the central region and the surface of the peripheral edge to prevent the appearance of slip lines on those surfaces.

Abstract: Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to the object during a background heating mode, thereby selectively heating the object to at least generally produce a temperature rise throughout the object during background heating. A first surface of the object is heated in a pulsed heating mode by subjecting it to at least a first pulse of energy. Background heating is controlled in timed relation to the first pulse. A first temperature response of the object to the first energy pulse may be sensed and used to establish at least a second set of pulse parameters for at least a second energy pulse to at least partially produce a target condition.

Abstract: The invention relates to a device for measuring the temperature of substrates, notably semiconductor wafers. The device comprises at least one radiation sensor for measuring the radiation emitted by the substrate and an element (19) which restricts the field of vision of the radiation sensor and is positioned between the substrate and the radiation sensor. The substrate temperature can be determined correctly and simply, even if the substrate vibrates or is tilting, owing to the fact that the edges (20) of the element extend in a straight line. The invention also relates to a corresponding method.

Abstract: An apparatus for heat treatment of a wafer. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

Abstract: A reactor for heat treatment of a substrate having a process chamber within a substrate enclosing structure, and a support structure configured to position a substrate at a predetermined spacing between the upper part and the bottom part within the process chamber during processing. Streams of gas may lift the substrate from the support structure so that the substrate floats. A plurality of heating elements is associated with at least one of the upper part and the bottom part and are arranged to define heating zones. A controller controls the heating elements individually so that each heating zone is configured to have a predetermined temperature determined by the controller. The heating zones provide for a non-uniform heating laterally across the substrate.

Abstract: A multi-thermal zone shielding apparatus provides a multi-zone temperature profile for the shield while shielding a portion of a hot workpiece in a high temperature processing system. The apparatus keeps the workpiece temperature hot at the shielded area and maintains the rest of the shield at a lower temperature. The apparatus includes a multi-thermal zone shield having a low thermal transmissivity section for preventing heat loss from the shielded portion of the hot workpiece due to less thermal energy being transmitted through the shielding portion of the shield, thus maintaining a more uniform temperature at the shielded portion of the workpiece, and a high thermal transmissivity section in the rest of shield for allowing more thermal energy from the hot workpiece to be transmitted through the shield without heating the shield, thus maintaining a lower temperature at the portion of the shield that is not engaged with the workpiece.

Abstract: In a light heating apparatus having a flash lamp in which noble gas is enclosed, a casing surrounding the flash lamp, a stage where a silicon wafer on which light from the flash lamp is emitted is placed, and a power feeding apparatus for controlling light emission of the flash lamp, B/A is greater than 1.0 wherein integrated radiant intensity in a range from 220 to 370 nm wavelength is represented as A and integrated radiant intensity in a range from 370 to 800 nm wavelength.

Abstract: An apparatus for baking a semiconductor wafer having a resist pattern thereon includes a baking oven in which the semiconductor wafer is placed and heated, and a first hot plate which is provided in the baking oven to heat an entire bottom surface of the semiconductor wafer. The apparatus also includes a gas supply unit having a gas introducing path, through which the purge gas is introduced into the baking oven, and a gas exhaust path, through which the purge gas is exhausted out of the baking oven. A gas temperature controller controls a temperature of the purge gas in order that the purge gas flowing around a peripheral edge or outer portion of the wafer has a higher temperature than that around the center or inner portion of the wafer.

Abstract: In a system for thermal processing of a semiconductor substrate, an RTP system employs a reflector plate which is highly reflective of radiation in a target wavelength range, and less reflective of radiation outside that target wavelength range. In one embodiment, the reflector plate has a highly reflective portion overlying a less reflective portion, wherein the highly reflective portion is highly reflective of radiation in the target wavelength range. As radiation emitted by the substrate is received on the reflector, the radiation in the target wavelength range is reflected, thereby facilitating measurement of the substrate temperature by the pyrometer(s), while radiation outside the target wavelength range is absorbed, thereby facilitating cooling of the substrate.

Abstract: A method and apparatus for heating semiconductor wafers in thermal processing chambers. The apparatus includes a non-contact temperature measurement system that utilizes radiation sensing devices, such as pyrometers, to determine the temperature of the wafer during processing. The radiation sensing devices determine the temperature of the wafer by monitoring the amount of radiation being emitted by the wafer at a particular wavelength. In accordance with the present invention, a spectral filter is included in the apparatus for filtering light being emitted by lamps used to heat the wafer at the wavelength at which the radiation sensing devices operate. The spectral filter includes a light absorbing agent such as a rare earth element, an oxide of a rare earth element, a light absorbing dye, a metal, or a semiconductor material.

Abstract: According to one aspect of the present invention, pinhole defects in resist coatings are repaired by heating the resist briefly to induce the resist to flow and fill pinholes. The resist is brought to a temperature at or above that at which the resist flows for long enough to permit the resist to flow and fill pinhole defects, but not so long as to corrupt the resist pattern. The original resist pattern may be biased to allow for some flow during the pinhole repair process. The entire patterned resist may be heated at once, or it may be heated one portion at a time. The application of heat may optionally be limited to locations where pinhole defects are found. By means of the invention, very thin patterned resist coatings free from pinhole defects may be obtained.

Abstract: A heat-treating furnace with a magnetic field comprising (a) a magnetic field-generating means constituted by an outer, ring-shaped, permanent magnet assembly comprising a plurality of permanent magnet segments combined with their magnetization directions oriented such that a magnetic flux flows in a diameter direction, and an inner, ring-shaped, permanent magnet assembly disposed inside the outer, ring-shaped, permanent magnet assembly and comprising a plurality of permanent magnet segments combined with their magnetization directions oriented such that a magnetic flux flows in a diameter direction; and (b) a heat treatment means disposed in a center hole of the inner, ring-shaped, permanent magnet assembly and comprising a cooling means, a heating means, and a heat-treating container containing heat-treating holder for holding a plurality of articles to be heat-treated in this order from outside, wherein an axial center of a magnetic field generated by the inner and outer ring-shaped, permanent magnet assem

Abstract: An apparatus and methods are provided for heating and sensing the temperature of a chemical reaction chamber without direct physical contact between a heating device and the reaction chamber, or between a temperature sensor and the reaction chamber. A plurality of chemical reaction chambers can simultaneously or sequentially be heated independently and monitored separately.

Abstract: An electric oven includes a cabinet within which is arranged an oven cavity. Arranged below a bottom portion of the oven cavity is a combination convection/radiant bake cooking system adapted to derive heat energy from a single heat source. The oven preferably includes a central opening in the bottom portion within which is arranged a glass panel. Arranged about a periphery of the central opening are a plurality of vented openings adapted to introduce a convective airflow into the oven cavity. The glass panel provides both a conductive heat surface transmitting radiant heat energy into the oven cavity and a viewing surface allowing a consumer to view the operation of the heat source.

Abstract: A lamp for a heat treatment apparatus that provides a rapid temperature rise without using a reflector. The lamp has at least one electrode part to which an electric power is supplied. A light-emitting part, connected to the electrode part, seals a filament for emitting light. A high-reflectance film is formed on an outer surface of a first portion of the light-emitting part so as to reflect light emitted from the filament. Reflected light exits from the light-emitting part through a second portion not having a film formed thereon. Accordingly, directivity of light exiting from the second portion of the light-emitting part is improved.

Abstract: Embodiments of the invention generally provides an apparatus and method for heating substrates, comprising a heater disposed within a chamber, a plurality of heated supports movably disposed within the chamber to support at least two substrates thereon and a contamination collector disposed in communication with the chamber.

Abstract: A method and apparatus are provided for curing powdered coatings on the face of porous wood products, such as medium density fibreboard (MDF), wherein a pair of inclined infrared catalytic heaters are used to apply heat directly onto the side edges of the board. In addition, catalytic heaters that are normally used to heat and cure the face surface of the board are moved father back to reduce their effectiveness and to limit out-gassing of entrapped air from the inner low density core of the board. This arrangement also allows the coating to cure at the side edges of the board at approximately the same rate as the face of the board, promoting a more uniform curing of the powder coating.

Abstract: The invention is a method of determining a set temperature profile for a method of controlling respective substrate temperatures of a plurality of groups in accordance with respective corresponding set temperature profiles, in a method of heat processing a plurality of substrates that are classified into the plurality of groups.

Abstract: A reactor chamber is positioned between a top array of LED heat lamps and a bottom array of LED heat lamps. The LED heat lamps forming the top and bottom arrays are individually or controllable in groups such that power output along each array of LED heat lamps can dynamically differ. The LED lamps can be controlled in response to, for example, feedback from chamber sensors, a desired temperature profile, and a failed LED lamp. In this way, the methods and systems described herein can dynamically compensate for operational characteristics of the reactor chamber. In one configuration, the LED heat lamps are arranged in a rectangular pattern. In some configurations, the LED heat lamps are arranged in a circular or a concentric pattern.

Abstract: A multirack speedcook oven includes a cooking cavity, a plurality of racks within the cooking cavity, an RF generation module operationally coupled to the cooking cavity and configured to deliver microwave energy into the cooking cavity, at least one heat source positioned within the cavity and configured to supply heat energy to the cooking cavity, and a control configured to accept data regarding said plurality of racks, the control operationally coupled to the RF generation module, and the at least one heat source for selective control thereof based on the accepted data.

Abstract: A lamp house stores twenty-seven flash lamps in such a state that a longitudinal direction of each of the twenty-seven flash lamps extends in a horizontal direction (Y-direction), and that the twenty-seven flash lamps are arranged in parallel to one another at equally spaced intervals in a horizontal direction (X-direction) perpendicular to the longitudinal direction. There is employed such a layout that a direction of substrate loading and unloading by a transport robot is perpendicular to the longitudinal direction of the flash lamps (the longitudinal direction of the lamp house). In this layout, the distance required for the transport robot to transfer a semiconductor wafer by slidingly moving a transport arm can be minimized to permit a compact transport robot, so that a thermal processing apparatus itself is compact and excellent in maintainability.

Abstract: A cooking appliance employing rapid cook technology includes an electronic oven control system employing an alpha-numeric data entry and display arrangement. The cooking appliance includes a display which incorporates a series of vertically spaced information display zones, with each of the zones being capable of displaying both alpha and numeric data to a user of the appliance. Text and numeric data can be entered by the user through a ten-digit keypad provided on a control panel of the appliance. Each labeled numeric key (0-9) can be used to input a corresponding numeric data symbol, as well as additional text information. This arrangement advantageously makes purchasing and operating a sophisticated cooking appliance more appealing and less intimidating to a consumer.

Abstract: A cooking appliance includes a control user interface defined by a control panel arranged with a set of dedicated keys for each of various primary cooking modes. The control panel includes a display having various information display zones and various buttons which are provided on each side of and aligned with the information display zones. The buttons are used to select options and settings presented in the display. A controller, based on a hierarchical type organization, is employed to select a choice of cooking modes visually presented to a user in the display. The controller then navigates the user through a series of sub-menus to establish settings and options associated with each particular cooking mode.

Abstract: A thermal processing method is described in which a temperature response of a substrate may be controlled during a heat-up phase or a cool-down phase, or during both phases. This reduces the thermal budget of the substrate and improves the quality and performance of devices formed on the substrate. In particular, by controlling the rate of heat transfer between the substrate and a thermal reservoir (e.g., a water-cooled reflector plate assembly), the temperature response of the substrate may be controlled during the thermal process. The rate of heat transfer may be changed by changing the thermal conductivity between the substrate and the thermal reservoir, by changing the emissivity of a surface of the thermal reservoir, or by changing the distance between the substrate and the thermal reservoir.

Abstract: An apparatus for supporting a substrate and a method for positioning a substrate include a substrate support, a stator circumscribing the substrate support, and an actuator. The actuator is coupled to the stator and adapted to change the elevation of the stator and/or adjust an angular orientation of the stator relative to its central axis. As the substrate support is magnetically coupled to the stator, a position, i.e., elevation and angular orientation, of the substrate support may be controlled.