Abstract: An image capturing apparatus comprises an image sensor including a plurality of image forming pixels and a lens which is arranged for the plurality of image forming pixels. Each of the image forming pixels includes a plurality of divided photo-electric conversion units, and the plurality of photo-electric conversion units have a function of photo-electrically converting a plurality of images having passed through different exit pupils of the imaging optical system, and outputting focus detection signals. Each of the image forming pixels includes a first light guide and a second light guide. The first light guide is arranged on a side of the lens, and the second light guide is arranged on a side of the photo-electric conversion unit, and a division count of the second light guide is larger than the division count of the first light guide.

Abstract: Photovoltaic cells are fabricated in which the compositions of the light-absorbing layer and the electron-accepting layer are selected such that at least one side of the junction between these two layers is substantially depleted of charge carriers, i.e., both free electrons and free holes, in the absence of solar illumination. In further aspects of the invention, the light-absorbing layer is comprised of dual-shell passivated quantum dots, each having a quantum dot core with surface anions, an inner shell containing cations to passivate the core surface anions, and an outer shell to passivate the inner shell anions and anions on the core surface.

Abstract: A light source unit having a luminescent material plate tight sealing construction with a dust-proof measure where a luminescent material plate is sealed tight from a circumference thereof by attaching tightly a luminescent material plate holding metallic plate to a collective lens and a projector having the light source unit are provided. The light source unit has an excitation light source device emitting excitation light and a luminous light emitting device, and the luminous light emitting device includes a luminescent material plate on to which excitation light from the excitation light source device is shone to emit luminous light of a different wavelength from the excitation light, a substrate on which the luminescent material plate is rested, a collective lens covering the luminescent material plate, and a lens holder holding the collective lens, whereby the luminescent material plate is sealed tight by at least the substrate and the collective lens.

Abstract: An electronic part package comprises a sealing resin layer, an electronic part and a metal plating pattern layer. The sealing resin layer is provided with a principal surface including a first region that has a bellows-like shape having alternate ridges and valleys and a second region that is flat. The electronic part includes an electrode having a principal surface and is covered by the sealing resin layer except the principal surface, which is surrounded by the second region. The metal plating pattern layer is integrally provided on the first and second regions and on the principal surface of the electrode. A portion of the metal plating pattern layer, the portion located on the first region, has a bellows-like shape having alternate ridges and valleys along an outline of the first region.

Abstract: A method and apparatus for inspecting an object. The apparatus comprises a wave generator and a detection system. The wave generator is positioned away from an object. The wave generator emits an ultrasonic wave in a direction towards a location on the object such that the ultrasonic wave encounters a portion of the object. The detection system is positioned at a same side of the object as the wave generator. The detection system detects a feature response of a feature within the portion of the object to the ultrasonic wave encountering the portion of the object.

Abstract: An image sensor may include a substrate having photoelectric conversion regions respectively formed on a plurality of pixels and charge trap regions overlapping with the respective photoelectric conversion regions and having depths or thicknesses that are different, for each of the respective pixel.

Abstract: To provide both a photodetecting element and a photodetecting device which can prevent generating of a plurality of current paths, and can detect with stability and high sensitivity regardless of a surface state instability of an optical absorption layer. The photodetecting element includes an optically transparent substrate, an optical absorption layer, an electrode, an electrode, an adhesive layer, an insulating film, and a package. The optical absorption layer is formed on the optically transparent substrate, and a part of each the electrodes is embedded in the optical absorption layer. The photodetecting unit is bonded junction down with the adhesive layer on the package. The optical absorption layer absorbs light of a specified wavelength selectively to be converted into an electric signal. The light to be measured is irradiated from a back side surface of the optically transparent substrate.

Abstract: Color filter array devices and methods of making color filter array devices are disclosed herein. A color filter array may include a substrate having a plurality of pixels thereon, one or more nanowires associated with each of the plurality of pixels, wherein each of the one or more nanowires extends substantially perpendicularly from the substrate, and an optical coupler associated with each of the one or more nanowires. A method of making a color filter array may include, making an array of nanowires, wherein each of the nanowires extend substantially perpendicularly from a substrate, disposing a transparent polymer material to substantially encapsulate the nanowires, removing the nanowires from the substrate, providing a pixel array comprising a plurality of pixels, wherein a hard polymer substantially covers an image plane of the pixel array, disposing the array of nanowires on the pixel array, and removing the transparent polymer encapsulating the nanowires.

Abstract: The present invention belongs to the field of display technology, and provides an OLED pixel circuit, a drive method thereof and a display device, which may solve the problem of relatively complicated control circuit and manufacturing process of an existing in-cell touch screen. In the OLED pixel circuit of the present invention, the data writing unit is for writing power supply voltage signal and data line voltage signal into the storage unit; the storage unit is for supplying voltage to the drive unit; the touch detecting unit is for sensing touch and generating a detecting signal; the drive unit is for converting the detecting signal into a touch output signal and for providing drive current for the OLED; and the light-emitting control unit is for turning on the drive unit and the OLED. The present invention may allow the touch display device to be thinner and lighter.

Abstract: A method of fabricating a superlattice structure requires that atoms of a first III-V semiconductor compound be introduced into a vacuum chamber such that the atoms are deposited uniformly on a substrate. Atoms of at least one additional III-V compound are also introduced such that the atoms of the two III-V compounds form a repeating superlattice structure of alternating thin layers. Atoms of a surfactant are also introduced into the vacuum chamber while the III-V semiconductor compounds are being introduced, or immediately thereafter, such that the surfactant atoms act to improve the quality of the resulting SL structure. The surfactant is preferably bismuth, and the III-V semiconductor compounds are preferably GaSb along with either InAs or InAsSb; atoms of each material are preferably introduced using molecular beam epitaxy. The resulting superlattice structure is suitably used to form at least a portion of an IR photodetector.

Abstract: The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ? of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ? of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.

Abstract: A Multi-Cycle Digital High Power Microwave (MCD-HPM) source includes a microwave transmission line (MTL) to which a plurality electrically charged thin film transmission lines (TFTL's) are connected by switches. The switches are activated in sequence to generate a square wave at a microwave output frequency. The activation signal is controlled by a free space time delay, which can vary the timing and/or routing of the activation signal by modifying at least one free space element, thereby adjusting the switch activation timing and varying the output frequency. In embodiments, the switches are photo-conducting switches, the activation signal is a laser beam, and the switch timing is varied by reorienting and/or repositioning mirrors and/or other elements in the free space time delay. The elements can be manually adjusted, or mounted on motorized stages and automatically controlled. Optical amplifiers can be included to compensate for losses in the time delay elements.

Abstract: A system and method for recovering performance of a degraded solar cell are provided. The system includes a solar cell having electrodes arranged on opposing sides of an electrolyte and defining a solar cell polarity therebetween and a power source connected to the electrodes. A controller controls the power source for applying a voltage pulse(s) across the solar cell. The voltage pulse may be applied at the solar cell polarity so as to define a forward electrical bias of the solar cell.

Abstract: A display may be provided with integral touch functionality. The display may include a common electrode layer having row electrodes arranged in rows and column electrodes interposed between the row electrodes of each row. The row electrodes may be electrically coupled by conductive paths. The row and column electrodes may be coupled to touch sensor circuitry that uses the row and column electrodes to detect touch events. Each electrode of the common electrode layer may cover a respective portion of an array of pixels. Each pixel of the display may have a respective aperture. The conductive paths that electrically couple row electrodes of the common electrode layer may cover or otherwise block some light from passing through pixels, resulting in reduced apertures. Dummy structures may be provided for other pixels that modify the apertures of the other pixels to match the reduced apertures associated with the conductive paths.

Abstract: A system of recognizing signal pattern for recognizing a signal pattern of an electronic device includes a determining unit coupled to the electronic device for outputting an operating command to the electronic device according to an operating state, wherein the electronic device generates a light signal according to the operating command, and an image capturing unit coupled between the determining unit and the electronic device for capturing the light signal to generate a first signal pattern to the determining unit, such that the determining unit determines whether the first pattern corresponds to the operating state.

Abstract: A microelectronic 3D packaging structure and a method of manufacturing the same are introduced. The microelectronic 3D packaging structure includes a first board with a plurality of a first edges and disposed with a first electronic device; a second board with a plurality of a second edges and disposed with a second electronic device, wherein at least one second edge of the second board is jointed to at least one first edge of the first board to form a joint line; and a joint connection portion disposed at the joint line of the two adjacent boards and adapted to function as a connection path for transmitting signals.

Abstract: A method and apparatus (80) are provided for routing entanglement building between a selected pairing of interface qubits (82). The qubits of the selected pairing of interface qubits (82) are separately entangled with at least one intermediate qubit (84) by interacting respective light fields with the interface qubits of the selected pairing and using an optical merge arrangement (83) to further interact the light fields with at least one intermediate qubit (84). Where there are multiple intermediate qubits (84) the intermediate qubits are entangled with each other. The or each entangled intermediate qubit (84) is then removed from entanglement.

Abstract: The present invention reduces color mixture (cross talk) and the degradation of sensitivity in a peripheral region of a pixel area to achieve a reduction of sensitivity irregularity in the pixel area. A solid-state imaging apparatus having a pixel area including a plurality of photoelectric conversion elements includes: a semiconductor substrate in which the plurality of photoelectric conversion elements are formed; a plurality of air gap formed layers which are arranged above the semiconductor substrate, and correspond to the photoelectric conversion elements in the plurality of photoelectric conversion elements, respectively; and air gaps arranged between the air gap formed layers in the plurality of air gap formed layers, respectively, wherein the air gap in a peripheral region B of the pixel area has a width larger than the air gap in a central region A of the pixel area.

Abstract: A thin film photovoltaic cell structure (1) comprises a substrate (2); a first dielectric layer (3) on the substrate (2); an active layer (4) on the first dielectric layer (3); and a plasmonic light concentrator arrangement (5) on the active layer (4) for coupling incident light at a first wavelength band into the active layer (4). According to the present invention, the thin film photovoltaic cell structure (1) further comprises a second dielectric layer (6) formed of a dielectric material which is transparent at the first wavelength band and at a second wavelength band on the plasmonic light concentrator arrangement (5); the first dielectric layer (3), the active layer (4), the plasmonic light concentrator arrangement (5), and the second dielectric layer (6) being configured to form a resonant cavity for coupling incident light at the second wavelength band into a standing wave confined in the resonant cavity.

Abstract: An apparatus includes a flip-chip semiconductor substrate, a light detection element configured to be formed over the flip-chip semiconductor substrate and to have a laminate structure including a first semiconductor layer of a first-conductive-type, a light-absorption layer formed over the first semiconductor layer, and a second semiconductor layer of a second-conductive-type formed over the light-absorption layer, an inductor configured to be connected to the light detection element over the flip-chip semiconductor substrate, an output electrode for bump connection configured to output a current generated by the light detection element through the inductor, a bias electrode for bump connection configured to apply a bias voltage to the light detection element through a bias electrode, and a line configured to cause a metal line of the inductor and the light detection element to be connected to the output electrode or the bias electrode.

Abstract: An integrated optical device and method for generating photons by manipulating path entanglement is provided. An integrated optical splitter splits pump light between two interferometer arms wherein each arm comprises a substantially identical photon pair source configured to be able to convert at least one pump light photon into a signal and idler photon pair. An integrated optical combiner device in optical communication with a first and a second optical output path interferes light from the first and second arms and outputs the signal and idler photons by bunching the signal and idler photons together in one of the optical output paths, or anti-bunching the signal photon in one output path and the corresponding idler photon in the other optical output path.

Abstract: A photonics system includes a transmit photonics module and a receive photonics module. The photonics system also includes a transmit waveguide coupled to the transmit photonics module, a first optical switch integrated with the transmit waveguide, and a diagnostics waveguide optically coupled to the first optical switch. The photonics system further includes a receive waveguide coupled to the receive photonics module and a second optical switch integrated with the receive waveguide and optically coupled to the diagnostics waveguide.

Abstract: An image sensor includes a sensing node to sense photo charges output from a photodiode. The sensing node includes a first dopant region of a first conductivity type and a second dopant region of a second conductivity type. The second dopant region surrounds the first dopant region. A third dopant region of the first conductivity type is adjacent to the second dopant region and is disposed around the sensing node. The first, second, and third dopant regions operate as a source, a gate, and a drain of a junction field effect transistor, respectively.

Abstract: An embodiment of array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type and housing an anode region, of a second conductivity type, facing a top surface of the body, a cathode-contact region, having the first conductivity type and a higher doping level than the body, facing a bottom surface of the body, an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the anode region and the cathode-contact region. The insulation region is formed by a first mirror region of polycrystalline silicon, a second mirror region of metal material, and a channel-stopper region of dielectric material, surrounding the first and second mirror regions.

Abstract: The present disclosure provides an integrated circuit device comprising a substrate having a back surface and a sensing region disposed in the substrate and being operable to sense radiation projected towards the back surface of the substrate. The device further includes a waveguide disposed over the back surface of the substrate. The waveguide is aligned with the sensing region such that the waveguide is operable to transmit the radiation towards the aligned sensing region. The waveguide includes a waveguide wall, and an inner region disposed adjacent to the waveguide wall. A diffractive index of the waveguide wall is less than a diffractive index of the inner region.

Abstract: A light-emitting diode (LED) package includes a package substrate, a first electrode pad, a second electrode pad, an upper insulating layer and an LED chip. The first electrode pad is disposed on an upper surface of the package substrate and includes a groove. The second electrode pad includes a protruding portion disposed in the groove of the first electrode pad. The upper insulating layer insulates the first electrode pad from the second electrode pad on the package substrate. The LED chip includes a first electrode and a second electrode which are respectively electrically connected in the form of a flip-chip to the first electrode pad and the protruding portion of the second electrode pad.

Abstract: A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit.

Abstract: A photoelectric conversion device includes: a first semiconductor region of a first conductivity type, which configures a first photoelectric conversion element; a second semiconductor region of the first conductivity type, which configures a second photoelectric conversion element; a third semiconductor region of the first conductivity type; a fourth semiconductor region of the first conductivity type; a first gate electrode, configuring a first transfer transistor conjointly; and a second gate electrode, configuring a second transfer transistor. At a side of the first gate electrode which is toward the first semiconductor region in plan view of the surface of the semiconductor substrate, a length of the side of the first gate electrode toward the first semiconductor region, is shorter than a length of the active region, and a length of the side of the first gate electrode toward the first semiconductor region, is longer than a length of the first semiconductor region.

Abstract: In one aspect, a photonic band gap (PBG) structure comprises: a first conducting layer; a second conducting layer; and a nanocomposite layer between the first conducting layer and the second conducting layer, the nanocomposite layer comprising one or more composite materials and one or more nanoparticles dispersed within the one or more composite materials, with the one or more composite materials comprising a material that is optically transparent.

Abstract: A light device includes a substrate on which a light source is provided; and a positional information transmitter that is provided on a surface of the substrate on which the light source is provided and transmits predetermined positional information to a terminal device.

Abstract: Example devices and methods for providing optical element focus functionality with a movable imager die are provided. In one example, a device comprises an optical element configured in a fixed position and configured to provide focus settings, an imager die configured to receive image data through the optical element, and an actuator coupled to the imager die and configured to cause a change in a position of the imager die. The change in the position of the imager die may cause a relationship between the imager die and the optical element to be configured in a given focus setting of the plurality of focus settings.

Abstract: A high-speed, high-sensitivity demodulation sensor usable for e.g. time-of-flight application uses a back side illuminated (BSI) image sensor chip, in which the photo-generated charges are first transferred to a demodulation area, from which the charges are then sampled and stored on at least one specific storage node. The storage node is electrically isolated from the sensitive area. Such a pixel might find its use specifically in 3D time-of-flight imaging given its improvements in sensitivity because the presented invention allows to design pixel with up to 100% fill factor and enables charge detection even if the charge generation by the photon occurs deep in the silicon substrate.

Abstract: A display device including pixels, in which each of the pixels includes: a positive power supply line and a negative power supply line; a drive transistor that drives a current in a current path according to a gate-source voltage; an organic EL element including an anode and a cathode that are disposed in the current path; an electrostatic storage capacitor that stores the gate-source voltage by having a first electrode connected to a gate of the drive transistor, and a second electrode connected to a source of the drive transistor; a switch transistor that switches a conduction state between the second electrode and a data line; and a switch transistor for applying a negative power supply line voltage to the first electrode. A potential difference between a first power supply line voltage VDDp and a second power line voltage VEEp decreases with proximity to the center of a display unit.

Abstract: Provided is a method for identifying material junctions and doping characteristics in semiconductor and other materials by illuminating the material and measuring voltage. A correlation between penetration depth of light and wavelength of light is established for a material. Photons are applied to materials such as semiconductor materials to induce charge. The photons are applied by exposing the material to light having a range of wavelengths. The induced charge results in a measurable voltage. The voltage is measured and the voltage measurements used to determine a junction depth and charge concentration of a material using the correlation between penetration depth of light and wavelength of light.

Abstract: The present invention relates to an image sensor comprising a microlens array, and to a manufacturing method thereof. The method of the present invention includes gradually increasing the aluminum composition ratio of a compound semiconductor as the latter gradually gets farther from a substrate, to enable a microlens-forming layer to grow, and making the oxidation rate of the region adjacent to the substrate slower and the oxidation rate of the region farther from the substrate faster, making the interface between the oxidized region and the unoxidized region into a lens shape after the completion of oxidation. The thus-made lens is integrated into an image sensor. The present invention reduces costs for manufacturing image sensors in which a microlens is integrated, increases the signal-to-noise ratio and resolution of the image sensor, and achieves improved sensitivity.

Abstract: A method wherein the updating of a counter is triggered when a photodiode reaches a discharge threshold.

Abstract: According to an embodiment, a light emitting apparatus includes a substrate; at least two distinct electrodes on the substrate, wherein the at least two distinct electrodes are spaced from each other; a light emitting device on one of the at least two distinct electrodes; lenses including a first lens and a second lens on the substrate, wherein the second lens is disposed on the first lens, wherein an outermost portion of the second lens is spaced from the substrate; and a supporting unit configured to directly contact the second lens, wherein the supporting unit is formed of a non-conductivity material.

Abstract: A semiconductor memory device includes a first memory region, a second memory region suitable for storing the same data as the first memory region, and a ray detection circuit suitable for detecting an incident ray to the first memory region, wherein a data stored in the second memory region is copied into the first memory region when the incident ray is detected.

Abstract: A method of forming of an image sensor device includes a substrate having a pixel region and a periphery region. A plurality of first trenches is etched in the periphery region. Each of the first trenches has a depth D1. A mask layer is formed over the substrate. The mask layer has a plurality of openings in the pixel region. A spacer is formed in an interior surface of each opening. A plurality of second trenches is etched through each opening having the spacer in the pixel region. Each of the second trenches has a depth D2. The depth D1 is larger than the depth D2.

Abstract: The invention provides a Silicon Photomultiplier (SiPM). The SiPM includes a plurality of microcells, a nonlinear element integrated in each one of the plurality of microcells, and a trigger line for outputting a summated current of the plurality of microcells, wherein the nonlinear element provides for a separated timing and energy signal.

Abstract: In one aspect, a system for monitoring load-related parameters of a rotor blade of a wind turbine is disclosed. The system may generally include a plurality of reflective targets positioned within the rotor blade. Each reflective target may include a unique visual identifier. In addition, the system may include a light source configured to illuminate the reflective targets and a sensor configured to detect light reflected from the reflective targets.

Abstract: The present embodiments provide surface mount devices and/or systems. In some embodiments, the surface mount devices comprise a casing having a recess formed extending at least partially into said casing; and first and second leads each of which is at least partially encased by said casing and each of which has a portion exposed through said recess, wherein at least one of said first and second leads has one or more size reduction features in its said exposed portion that reduces the surface area to provide an increased surface bonding area to said casing around said lead.

Abstract: A system for continuously monitoring a laser beam includes a photodiode sensor mounted adjacent to a laser beam optical path. A laser beam optical path analysis module connected to the photodiode sensor and adapted to receive, analyze and report the sensor output from the photodiode sensor.

Abstract: Photo-field-effect transistor devices and associated methods are disclosed in which a photogate, consisting of a quantum dot sensitizing layer, transfers photoelectrons to a semiconductor channel across a charge-separating (type-II) heterointerface, producing a sustained primary and secondary flow of carriers between source and drain electrodes. The light-absorbing photogate thus modulates the flow of current along the channel, forming a photo-field effect transistor.

Abstract: A centrifuge force microscope module for use within a bucket of a centrifuge in measuring a characteristic of a sample under a centrifugal force and/or in monitoring a sample under a centrifugal force. The centrifuge force microscope module includes an electronics module and an optical module. The electronics module includes a housing removably disposable in the bucket of the centrifuge, and at least one of a power source and a connector operably connectable to a power source for powering the electronics module. The optical module is operable to receive and direct light from the sample. The optical module is releaseably connectable to the housing of the electronics module.

Abstract: A semiconductor device including photosensor capable of imaging with high resolution is disclosed. The semiconductor device includes the photosensor having a photodiode, a first transistor, and a second transistor. The photodiode generates an electric signal in accordance with the intensity of light. The first transistor stores charge in a gate thereof and converts the stored charge into an output signal. The second transistor transfers the electric signal generated by the photodiode to the gate of the first transistor and holds the charge stored in the gate of the first transistor. The first transistor has a back gate and the threshold voltage thereof is changed by changing the potential of the back gate.

Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.

Abstract: A solid-state image pickup device which is configured not to require transfer of signal charges between pixels performs TDI. An output control section 5 sequentially assigns a pixel signal output processing period to each pixel array group 10 in the order of the vertical direction at an interval of one horizontal processing period H obtained by dividing one frame period T into three. The one frame period T is a period when each pixel array 100 is moved in the vertical direction. An adder 50 sums up a pixel signal held in a signal holding portion 41_X, and a pixel signals held in a signal holding portion 41_R, 41_G, 41_B corresponding to the pixel signal under the control of the output control section 5, and outputs the summation result to an A/D converter 60.

Abstract: A negative feedback avalanche diode for detecting the receipt of a single photon is described. The photodetector comprises a load element having two load states, one characterized by high impedance and the other characterized by low impedance. The load state of the load element is controlled by a control signal generated within the negative feedback avalanche diode itself.

Abstract: A single-photon receiver is presented. The receiver comprises two SPADs that are monolithically integrated on the same semiconductor chip. Each SPAD is biased with a substantially identical gating signal. The output signals of the SPADs are combined such that capacitive transients present on each output signal cancel to substantially remove them from the output signal from the receiver.