Abstract: Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.

Abstract: A photoelectric encoder according to the present invention comprises a light-receiving unit including: a first and second light-receiving element column; and a light-blocking layer configured from a light-blocking portion and a light-transmitting portion, the first and second light-receiving element columns being disposed staggered in a second direction such that an arrangement pattern of light-receiving elements in the first and second light-receiving element columns has a pitch which is the same in a first direction and a phase which differs in the first direction, and the light-transmitting portion on the light-receiving surface of the light-receiving element in the first light-receiving element column and the light-transmitting portion on the light-receiving surface of the light-receiving element in the second light-receiving element column being formed so as not to overlap each other when staggered in the second direction.

Abstract: The present invention relates to a solid-state optically activated switch that may be used as limiting switch in a variety of applications or as a high voltage switch. In particular, the switch may incorporate the photoconductive properties of a semiconductor to provide the limiting function in a linear mode. In one embodiment, a configuration of the switch allows for greater than 99.9999% off-state transmission and an on-state limiting of less than 0.0001% of the incident signal.

Abstract: The present invention relates to an optical head for revealing near field through beams irradiated from a light source of a far field optical system, the optical head including: a flexible substrate made of a soft material and adapted to allow the optical head to be brought into close contact with a measured object and attached thereto even if the measured object has a curved or flat surface; and a near-field revelation part located between the measured object and the flexible substrate in such a manner as to have one side brought into contact with the flexible substrate and the other side detachably attached to the measured object and adapted to reveal the near field through the beams irradiated from the light source.

Abstract: A light sensitive circuit includes a light sensing capacitor and a driving transistor. The light sensing capacitor is configured to sense light of a predetermined one or more wavelengths. The driving transistor includes a gate electrode electrically connected to the light sensing capacitor and is configured to generate a light sensing current according to a voltage of the gate electrode in the driving transistor. A light sensing accuracy and a light sensing signal to noise ratio (SNR) of the display apparatus including a plurality of such light sensing capacitors may be improved relative to ones that do not include such light sensing capacitors.

Abstract: Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.

Abstract: A celestial compass kit. The kit includes an inclinometer, a camera system with a special telecentric fisheye lens for imaging at least one celestial object and a processor programmed with a celestial catalog providing known positions at specific times of at least one celestial object and algorithms for automatically calculating target direction information based on the inclination of the system as measured by the inclinometer and the known positions of at least one celestial object as provided by the celestial catalog and as imaged by the camera. The telecentric fisheye lens produces an image on the sensor located at or near the focal plane which remains spatially constant within sub-micron accuracies despite thermally produced changes in the focus of the lens.

Abstract: In a laser device, a different refractive index region 6B of a photonic crystal layer is arranged at a lattice point position of a square lattice. In the case where a plane shape of the different refractive index regions 6B is a nearly isosceles right triangle, two sides forming a right angle extend along longitudinal and horizontal lateral lines of the square lattice. A direction parallel to or vertical to an oblique side of the triangle and a direction of polarization in the periodic polarization inversion structure of a nonlinear optical crystal NL are the same.

Abstract: A deposition apparatus includes a first nozzle configured to spray a first deposition material toward a substrate and a second nozzle configured to spray a second deposition material, a first deposition source configured to supply the first deposition material to the first nozzle and a second deposition source configured to supply the second deposition material to the second nozzle. The deposition apparatus further includes a barrier member disposed between the first nozzle and the second nozzle and is configured to block the first deposition material evaporated through the first nozzle from being mixed with the second deposition material evaporated through the second nozzle and a vacuum chamber configured to surround the first and second nozzles, the first and second deposition sources and the barrier member.

Abstract: A detector for detecting single photons of infrared radiation. In one embodiment a waveguide configured to transmit infrared radiation is arranged to be adjacent a graphene sheet and configured so that evanescent waves from the waveguide overlap the graphene sheet. In some embodiments the waveguide is omitted and infrared light propagating in free space illuminates the graphene sheet directly. A photon absorbed by the graphene sheet from the evanescent waves heats the graphene sheet. The graphene sheet is coupled to the weak link of a Josephson junction, and a constant bias current is driven through the Josephson junction, so that an increase in the temperature of the graphene sheet results in a decrease in the critical current of the Josephson junction and a voltage pulse in the voltage across the Josephson junction. The voltage pulse is detected by the pulse detector.

Abstract: In a laser device, a different refractive index region 6B of a photonic crystal layer is arranged at a lattice point position of a square lattice. In the case where a plane shape of the different refractive index regions 6B is a nearly isosceles right triangle, two sides forming a right angle extend along longitudinal and horizontal lateral lines of the square lattice. A direction parallel to or vertical to an oblique side of the triangle and a direction of polarization in the periodic polarization inversion structure of a nonlinear optical crystal NL are the same.

Abstract: A semiconductor structure for use in single molecule real time DNA sequencing technology is provided. The structure includes a semiconductor substrate including a first region and an adjoining second region. A photodetector is present in the first region and a plurality of semiconductor devices is present in the second region. A contact wire is located on a surface of a dielectric material that surrounds the photodetector and contacts a topmost surface of the photodetector and a portion of one of the semiconductor devices. An interconnect structure is located above the first region and the second region, and a metal layer is located atop the interconnect structure. The metal layer has a zero waveguide module located above the first region of the semiconductor substrate. A DNA polymerase can be present at the bottom of the zero waveguide module.

Abstract: Provided is an illumination device that includes a light emitting device having a first electrode and a second electrode and a mounting substrate including a first wiring pattern and a second wiring pattern. The first wiring pattern and the second wiring pattern face and are bonded to the first electrode and the second electrode, respectively, through a bonding material. The second electrode and the second wiring pattern are configured to be at least partially overlapped with each other in a plan view irrespective of an orientation of the light emitting device, under condition that the first electrode and the first wiring pattern are at least partially overlapped with each other in the plan view.

Abstract: A manufacturing method of a sensing integrated circuit including the following acts. A plurality of transistors are formed. At least one dielectric layer is formed on or above the transistors. A plurality of connecting structures are formed in the dielectric layer. The connecting structures are respectively and electrically connected to the transistors. A plurality of separated conductive wells are respectively formed in electrical contact with the connecting structures.

Abstract: An optical cover plate for image sensor package includes a transparent substrate, at least an annular dam structure, and a barrier layer. The annular dam structure is disposed on the transparent substrate and encompasses a light-receiving area. The barrier layer conformally covers at least a sidewall of the annular dam structure. A method of manufacturing the optical cover plate, an image sensor package and fabrication method thereof are also disclosed.

Abstract: A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit.

Abstract: A solid-state image pickup device capable of suppressing the generation of dark current and/or leakage current is provided. The solid-state image pickup device has a first substrate provided with a photoelectric converter on its primary face, a first wiring structure having a first bonding portion which contains a conductive material, a second substrate provided with a part of a peripheral circuit on its primary face, and a second wiring structure having a second bonding portion which contains a conductive material. In addition, the first bonding portion and the second bonding portion are bonded so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. Furthermore, the conductive material of the first bonding portion and the conductive material of the second bonding portion are surrounded with diffusion preventing films.

Abstract: A method for reducing light-induced-degradation in manufacturing a solar cell, includes the steps of: (a) irradiating the solar cell with an irradiance; (b) maintaining the solar cell within a temperature range; (c) removing the solar cell away from the irradiance of step (a) after a time; and (d) determining the irradiance, the temperature range, and the time such that the LID is optimally below a predetermined LID.

Abstract: An integrated circuit an open pin detector includes a current source coupled to the pin, a comparator having a first input coupled to the pin, a second input responsive to a threshold voltage, and an output at which a comparator output signal is provided. A controller is responsive to the comparator output signal to provide an enable signal to the current source and an open pin signal indicative of an open pin condition at the pin. A method for detecting an open pin condition of a pin of an integrated circuit includes comparing the pin voltage to a first threshold voltage level, initiating open pin detection in response to the pin voltage falling below the first threshold voltage level, such as by providing a current to the pin, and indicating an open pin condition if the pin voltage rises to exceed a second threshold voltage level within a predetermined time interval. Also described is preventing the pin voltage from exceeding a predetermined voltage level during open pin detection.

Abstract: The present invention provides a contact probe pin in which a carbon film having both of conductivity and durability is formed on a base material with a tip divided, wherein Sn adherence can be reduced as much as possible to be able to maintain stable electrical contact over a long period of time, even under such circumstances that the temperature of a usage environment becomes high. The present invention relates to a contact probe pin, including a tip divided into 2 or more projections and repeatedly coming into contact with a test surface at the projection, wherein a carbon film containing a metal element is formed at least on a surface of the projection, and a radius of curvature at an apex part of the projection is 30 ?m or more.

Abstract: A stacked image sensor includes a substrate including a first photoelectric conversion device, a second photoelectric conversion device and a first color signal storing device disposed between the first photoelectric conversion device and the second photoelectric conversion device. A second color filter and a third color filter are disposed at positions corresponding to the first photoelectric conversion device and the second photoelectric conversion device on the substrate. A conductive connecting member is disposed between the second color filter and the third color filter. A first color sensing photoelectric conversion device is disposed on the second color filter, the third color filter, and the conductive connecting member. The cross-sectional area of conductive connecting member is at least greater than the cross-sectional area of the first color signal storing device.

Abstract: A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit.

Abstract: One or more embodiments are directed to a device comprising: a body having a cavity, an opaque structure, and an aperture in the body that places the cavity in fluid communication with an environment external to the body. A photon emitter is located in the cavity below the aperture and configured to emit photons through the aperture to the environment external to the body. A photon receiver is located in the cavity below the opaque structure of the body and configured to receive photons that are each reflected from both an object that is spaced apart from the body in the environment external to the body and from a surface of the opaque structure.

Abstract: A beam antenna comprising a first material layer, a second material layer, a first radiating conductor unit and an energy transmission conductor layer is provided. The first material layer has a signal source and a first conductor layer. The second material layer has a first thin-film layer, where the first thin-film layer is adhered on a surface of the second material layer. The first thin-film layer further comprises an insulating gel and a plurality of trigger particles. The first radiating conductor unit is adhered on a surface of the first thin-file layer, and the first thin-file layer is located between the first radiating conductor unit and the second material layer. The energy transmission conductor structure is disposed between the first and the second material layers, which has a first terminal and a second terminal that electrically coupled or connected to the signal source and the first radiating conductor unit respectively.

Abstract: A proximity sensor includes a semiconductor die, a light emitting assembly, a redistribution layer, and an encapsulating layer. A surface of the semiconductor die includes a sensor area and contact pads. A lens is positioned over the sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads that face the redistribution layer. A side of the redistribution layer includes contact pads. Electrical connectors place each of the contact pads of the semiconductor die in electrical communication with a respective one of the contact pads of the redistribution layer. The encapsulating layer is positioned on the redistribution layer and at least partially encapsulates the semiconductor die, the lens over the sensor area of the semiconductor die, and the light emitting assembly.

Abstract: There is provided an optical navigation device including at least one light source, an image sensor and a processing unit. The light source illuminates a work surface in a first brightness value and a second brightness value. The image sensor receives reflected light from the work surface and outputs a first image frame corresponding to the first brightness value and a second image frame corresponding to the second brightness value. The processing unit calculates a differential image of the first image frame and the second image frame and identifies an operating state according to the differential image.

Abstract: One aspect of the present invention relates to a photovoltaic cell. In one embodiment, the photovoltaic cell includes a first conductive layer, an N-doped semiconductor layer formed on the first conductive layer, a first silicon layer formed on the N-doped semiconductor layer, a nanocrystalline silicon (nc-Si) layer formed on a first silicon layer, a second silicon layer formed on the nc-Si layer, a P-doped semiconductor layer on the second silicon layer, and a second conductive layer formed on the P-doped semiconductor layer, where one of the first silicon layer and the second silicon layer is formed of amorphous silicon, and the other of the first silicon layer and the second silicon layer formed of polycrystalline silicon.

Abstract: A detector for detecting single photons of infrared radiation. In one embodiment a waveguide configured to transmit infrared radiation is arranged to be adjacent a graphene sheet and configured so that evanescent waves from the waveguide overlap the graphene sheet. An infrared photon absorbed by the graphene sheet from the evanescent waves heats the graphene sheet. The graphene sheet is coupled to the weak link of a Josephson junction, and a constant bias current is driven through the Josephson junction, so that an increase in the temperature of the graphene sheet results in a decrease in the critical current of the Josephson junction and a voltage pulse in the voltage across the Josephson junction. The voltage pulse is detected by the pulse detector.

Abstract: In a method of manufacturing a quantum dot, a core may be formed using (utilizing) at least one cation precursor and at least one anion precursor. The core may be reacted with a shell forming precursor and a ligand forming precursor for more than one hour to form a shell enclosing the core and a ligand. A nanoparticle including the core, the shell and the ligand may be washed.

Abstract: A detector for detecting single photons of infrared radiation. In one embodiment a waveguide configured to transmit infrared radiation is arranged to be adjacent a graphene sheet and configured so that evanescent waves from the waveguide overlap the graphene sheet. An infrared photon absorbed by the graphene sheet from the evanescent waves heats the graphene sheet. The graphene sheet is coupled to the weak link of a Josephson junction, and a constant bias current is driven through the Josephson junction, so that an increase in the temperature of the graphene sheet results in a decrease in the critical current of the Josephson junction and a voltage pulse in the voltage across the Josephson junction. The voltage pulse is detected by the pulse detector.

Abstract: A cruising lane recognition device is mounted on a vehicle. The device includes a camera, a storing unit, and a processor. The camera captures an image of an area including the road ahead of the vehicle. The processor is configured to detect luminances within the images, recognize a cruising lane-marker of the road in the images on the basis of the luminances which are detected, a store, in the storing unit, a position of the cruising lane-marker that is recognized, detect that the vehicle is in a tunnel, and set a virtual cruising lane-marker on the basis of an archival record of the position of a cruising lane-marker which has been stored in the storing unit when the cruising lane-marker cannot be recognized and the vehicle has been detected to exist in a tunnel.

Abstract: An image sensor comprising a substrate and one or more of pixels thereon. The pixels have subpixels therein comprising nanowires sensitive to light of different color. The nanowires are functional to covert light of the colors they are sensitive to into electrical signals.

Abstract: A lighting device has a carrier with a mounting face. A number of light-emitting diodes include at least two of the light-emitting diodes suitable for emitting light of different colors during operation. At least one color sensor, during operation, detects the light of at least one of the light-emitting diodes. At least one light-measuring face is illuminated by light of at least one of the light-emitting diodes and reflects and/or scatters at least a portion of this light. The light-emitting diodes and the at least one color sensor are arranged on the mounting surface, the at least one light-measuring face is arranged at a distance from the carrier, and the at least one color sensor; detects for the most part light reflected by the at least one light-measuring face from at least one of the multiplicity of light-emitting diodes.

Abstract: An electronic device includes a substrate, a first device, a second device, and a shielding wall. The first device and the second device are disposed on the substrate respectively. The shielding wall is disposed independently between the first device and the second device. The shielding wall is configured for suppressing the electromagnetic interference from the second device to the first device.

Abstract: The present invention provides an electromagnetic wave detecting element that can suppress occurrence of cracking at a substrate peripheral portion, and occurrence of breakage of lead-out wires. An interlayer insulating film is formed so as to cover TFT switches on a substrate. An interlayer insulating film is formed so as to cover semiconductor layer of sensor portions that generate charges due to electromagnetic waves that are an object of detection being irradiated, and cover a region on the substrate where the interlayer insulating film is formed.

Abstract: An optical device includes an optical bench and two flip-chip bonded optical chips. The optical bench includes a large area slab waveguide structure which has an input facet facing the first optical chip, an output facet facing the second optical chip, and one or more curved facet which reflects the slab mode light such that the input optical mode coupled through the input facet diverges in the slab waveguide plane as it propagates, reflects at the one or more curved facets, and focuses to an output optical mode at the output facet with mode size larger than the input optical mode in the in-plane direction. During fabrication, after the first optical chip is flip-chip bonded, the location of the focused output optical mode on the output facet is determined, and then the second optical chip is flip-chip bonded based on the determined location of the output optical mode.

Abstract: A sensor arrangement comprises a carrier substrate and a ferroelectric layer disposed on the carrier substrate, wherein the sensor arrangement comprises means for reading the permittivity of the ferroelectric layer. The sensor arrangement is such that the ferroelectric layer is disposed in a crystalline manner on the carrier substrate. A method for producing the sensor arrangement and to use of the same is also disclosed.

Abstract: The present disclosure relates to organic photosensitive optoelectronic devices grown in an inverted manner. An inverted organic photosensitive optoelectronic device of the present disclosure comprises a reflective electrode, an organic donor-acceptor heterojunction over the reflective electrode, and a transparent electrode on top of the donor-acceptor heterojunction.

Abstract: A sensor pixel detects a photon and outputs a first voltage proportional to a time of arrival of the detected photon. This voltage is converted to a multi-bit digital signal in the format of a thermometer code. A number of counter circuits, one counter circuit per bit of the multi-bit digital signal, are provided to accumulate the thermometer coded outputs. Each counter is configured to increment in response to an active logic state of the corresponding bit of the multi-bit digital signal. Accumulated count values in the counter circuits provide a timing histogram with respect to photon detection.

Abstract: A laser transponder system for disrupting speed and/or distance measuring LIDARs. The system includes at least two laser transponders, a microcontroller and a user interface. The microcontroller is connected to both laser transponders, and to the user interface. Microcontroller analyzes input from the laser transponders and determines their output. In case an advanced speed measuring LIDAR signal is detected the microcontroller configures the first laser transponder as a transmitting only unit and the second laser transponder as a receiving only unit. Transmissions emanating from the transmitting only unit are not received by the receiving only unit. Disrupting signal periods are selected by the microcontroller algorithm from its pre-stored database according to a detected LIDAR signal.

Abstract: A detector for detecting single photons of infrared radiation. In one embodiment a waveguide configured to transmit infrared radiation is arranged to be adjacent a graphene sheet and configured so that evanescent waves from the waveguide overlap the graphene sheet. An infrared photon absorbed by the graphene sheet from the evanescent waves heats the graphene sheet. The graphene sheet is coupled to the weak link of a Josephson junction, and a constant bias current is driven through the Josephson junction, so that an increase in the temperature of the graphene sheet results in a decrease in the critical current of the Josephson junction and a voltage pulse in the voltage across the Josephson junction. The voltage pulse is detected by the pulse detector.

Abstract: An optical sensor for detecting at least one of proximity and gesture is disclosed. The optical sensor is configured to detect or sense an object that is located out of the sensor's primary axis. This off-axis detection is facilitated by projecting light emitted by a light source away from the sensor's primary axis and away from the direction in which the light was originally emitted by the light source. The light detector is also configured to detect the light that is being projected off-axis.

Abstract: A mechanism for reconstructing a signal (e.g., an image) based on a vector s, which includes measurements of the signal. The measurements have been acquired using at least a portion of a measurement vector set represented by a matrix H. Each of the measurements corresponds to a respective row of the matrix H. (For example, each of the measurements may correspond to an inner product between the signal and a respective row of the matrix product HD, wherein D is a generalized permutation matrix.) A total-variation primal-dual hybrid gradient (TV-PDHG) algorithm is executed based on data including the matrix H and the vector s, to determine an estimate for the signal. The TV-PDHG algorithm is implemented in fixed-point arithmetic.

Abstract: To provide a display device and a driving method thereof, where variations in the threshold voltage of transistors can be compensated and thus variations in luminance of light-emitting elements can be suppressed. In a first period, initialization is performed; in a second period, a voltage based on the threshold voltage of a first transistor is held in first and second storage capacitors; in a third period, a voltage based on a video signal voltage and the threshold voltage of the first transistor is held in the first and second storage capacitors; and in a fourth period, voltages held in the first and second storage capacitors are applied to a gate terminal of the first transistor to supply a current to a light-emitting element, so that the light-emitting element emits light. Through the operation process, a current obtained by compensating variations in the threshold voltage of the first transistor can be supplied to the light-emitting element, thereby variations in luminance can be suppressed.

Abstract: A semiconductor device has a substrate. A conductive via is formed through the substrate. A plurality of first contact pads is formed over a first surface of the substrate. A plurality of second contact pads is formed over a second surface of the substrate. A dummy pattern is formed over the second surface of the substrate. An indentation is formed in a sidewall of the substrate. An opening is formed through the substrate. An encapsulant is deposited in the opening. An insulating layer is formed over second surface of the substrate. A dummy opening is formed in the insulating layer. A semiconductor die is disposed adjacent to the substrate. An encapsulant is deposited over the semiconductor die and substrate. The first surface of the substrate includes a width that is greater than a width of the second surface of the substrate.

Abstract: Embedded Wafer-Level Packaging (eWLP) methods and optoelectronic devices, packages and assemblies made by the eWLP methods are described. The eWLP methods allow electrical interconnections to be easily and economically made to the back sides of the chips of the eWLP wafer using eWLP wafer-level processes, thereby eliminating the need to use TMVs or TSVs to make such interconnections. The eWLP methods also allow thermal and optical interconnections between the back side and the front side of the eWLP wafer to be easily and economically made. In addition, the eWLP methods allow electrical and optical interfaces to be formed on the front side and/or on the back side of the eWLP wafer. The eWLP methods may be used to form a variety of very thin optoelectronic devices, packages and assemblies having a various useful configurations with high volume, yield and throughput.

Abstract: A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.

Abstract: Embodiments of mechanisms for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate and one photodetector formed in the semiconductor substrate. The image sensor device also includes one gate stack formed over the semiconductor substrate. The gate stack includes multiple polysilicon layers.

Abstract: An optoelectronic device is provided having a plurality of light emitters arranged to be able to illuminate an area of an environment, a CMOS based miniaturized spectrometer arranged to obtain the light spectrum of environmental light within the area of the environment, and control devices, means or methods for modifying the emission of the light emitters, based on the obtained light spectrum. Also, a system for modifying the environmental light of an area is provided, the system having at least two optoelectronic devices, and devices, means or methods to transmit information between them. Furthermore, a method for modifying the environmental light of an area, a computer program product for performing said method, a reflective device for determining the calibration of an optoelectronic device, and a method thereof.

Abstract: A solid-state image pickup device capable of suppressing the generation of dark current and/or leakage current is provided. The solid-state image pickup device has a first substrate provided with a photoelectric converter on its primary face, a first wiring structure having a first bonding portion which contains a conductive material, a second substrate provided with a part of a peripheral circuit on its primary face, and a second wiring structure having a second bonding portion which contains a conductive material. In addition, the first bonding portion and the second bonding portion are bonded so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. Furthermore, the conductive material of the first bonding portion and the conductive material of the second bonding portion are surrounded with diffusion preventing films.