Abstract: A device is disclosed for monitoring power from a laser diode. The device includes a substrate having a top surface and a first facet perpendicular to the top surface through which light enters the substrate. The device further includes a second facet onto which light that has entered the substrate through the first facet along an optical axis that is non-normal to the first facet is incident. The device further includes a photodiode fabricated on the top surface of the substrate for measuring an intensity of the light that enters the first facet of the substrate along the optical axis that is non-normal to the first facet. The light that has entered the substrate through the first facet along the optical axis that is non-normal to the first facet is reflected by the second facet toward a photoactive region of the photodiode.

Abstract: Apparatus including one or more carbon nanotubes; one or more fullerenes directly covalently bonded to the one or more carbon nanotubes; and one or more photoactive molecules bonded to the one or more fullerenes.

Abstract: A system and method for detecting laser pulses is disclosed. According to one embodiment, the present system detects an extrasolar laser pulse, ideally repeated pulses, by observing the pulse, characterizing the pulse, and confirming the data related to the pulse.

Abstract: A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit.

Abstract: The present invention provides a light-emitting apparatus, a method for forming a light-emitting apparatus, and a display apparatus. The light-emitting apparatus comprises at least one OLED light-emitting unit and at least one quantum dot light-emitting unit, wherein the at least one quantum dot light-emitting unit and the at least one OLED light-emitting unit are arranged in series.

Abstract: A water meter that requires neither a smoothing capacitor of large capacitance nor a high frequency reference clock is offered. A rotation detection unit is formed to include a first coil, a first capacitor, a charging transistor, a power supply line, an activation transistor, an output buffer circuit, a DA converter, a comparator and a counter. A first LC resonant circuit is provided with the activation transistor connected in series with the first coil, the first capacitor connected in parallel with the first coil and the charging transistor for charging the first capacitor. The first LC resonant circuit is activated by turning on the activation transistor after the first capacitor is charged by turning on the charging transistor.

Abstract: A photon detection device includes a single photon avalanche diode (SPAD) including a multiplication junction defined at an interface between n doped and p doped layers of the SPAD in a first region of a semiconductor layer. A vertical gate structure surrounds the SPAD in the semiconductor layer to isolate the SPAD in the first region from a second region of the semiconductor layer on an opposite side of the vertical gate structure. The SPAD laterally extends within the first region of semiconductor layer to the vertical gate structure. An inversion layer is generated in the SPAD around a perimeter of the SPAD proximate to the vertical gate structure in response to a gate bias voltage coupled to the vertical gate structure. The inversion layer isolates the SPAD from the second region of the semiconductor layer on the opposite side of the vertical gate structure.

Abstract: A photoconductive switch consisting of an optically actuated photoconductive material, e.g. a wide bandgap semiconductor such as SiC, situated between opposing electrodes. The electrodes are created using various methods in order to maximize reliability by reducing resistive heating, current concentrations and filamentation, and heating and ablation due to the light source. This is primarily accomplished by the configuration of the electrical contact geometry, choice of contacts metals, annealing, ion implantation, creation of recesses within the SiC, and the use of coatings to act as encapsulants and anti-reflective layers.

Abstract: Systems and methods for providing depth imaging using a CCD image sensor. In a method for visual imaging and depth imaging, steps include providing a CCD image sensor device arranged to receive light from an optical lens and having an array of pixels and corresponding pixel charge storage elements; providing a light source for transmitting light pulses responsive to a pulse control signal; providing timing signals to configure the CCD image sensor to collect and store charge from the pixel storage elements; and performing a depth calculation using a background charge, a reflected charge, and a depth charge collected in three frame periods for each pixel in the CCD image sensor. A system including a CCD image sensor for use with the embodiments is disclosed. Additional embodiments are disclosed.

Abstract: A device for detecting light includes at least one silicon photomultiplier (SiPM) having an array of a plurality of single-photon avalanche diodes (SPADs), the array being larger in area than an incident light. The device is configured so as to at least one of activate and analyze only the SPADs upon which a specific minimum intensity of light impinges.

Abstract: Provided is an optical switch including a substrate, a first optical waveguide disposed on the substrate and having a conductive portion disposed on one surface thereof, and a second optical waveguide disposed on the substrate being spaced apart from the first optical waveguide and having an electrode portion disposed on one surface thereof. The electrode portion and the conductive portion face each other. The electrode portion controls an optical field between the first optical waveguide and the second optical waveguide.

Abstract: A light receiving device includes: a photoelectric converter including a photodiode and a first pixel electrode disposed on a lower surface of the photodiode; a scanning circuit connected to the first pixel electrode; an electrode pad disposed on a periphery of the scanning circuit; a transparent conductive film extending from an upper surface of the photodiode to the electrode pad, the transparent conductive film having an inclination relative to the upper surface of the photodiode, between the photodiode and the electrode pad; and a sealing resin filled in a space between the photoelectric converter and the scanning circuit, and in a space under the transparent conductive film around the photoelectric converter.

Abstract: A spectral sensor includes a wiring substrate which has a principal surface; a light detector which is disposed on the principal surface of the wiring substrate and is electrically connected to the wiring substrate; spacer which is disposed around the light detector, on the principal surface of the wiring substrate; and a Fabry-Perot interference filter which has a light transmission region and is disposed on the principal surface of the wiring substrate with the spacer therebetween. The spacer support the Fabry-Perot interference filter in a surrounding region of the light transmission region and the spacer is arranged to form opening communicating with an inner side of the surrounding region and an outer side of the surrounding region, when viewed from a light transmission direction in the light transmission region.

Abstract: A diode includes a plurality of fins defined in a semiconductor substrate. An anode region is defined by a doped region in a first surface portion of each of the plurality of fins and in a second surface portion of the semiconductor substrate disposed between adjacent fins in the plurality of fins. The doped region includes a first dopant having a first conductivity type and is contiguous between the adjacent fins. A cathode region is defined by an inner portion of each of the plurality of fins positioned below and contacting the first surface portion and a third portion of the semiconductor substrate positioned below and contacting the second surface portion. The cathode region is contiguous and the dopants in the cathode region and anode region have opposite conductivity types. A junction is defined between the anode region and the cathode region. A first contact interfaces with the anode region.

Abstract: An apparatus having a rectangular imaging array characterized by a plurality of pixel sensors and a plurality of readout lines is disclosed. The apparatus has a plurality of column processing circuits, each column processing circuit being connected to a corresponding one of the readout lines and a plurality of signal injectors, one signal injector being connected to each of the readout lines. Each signal injector causes one of a predetermined number of voltages to be coupled to that readout line. An exposure for each of the pixel sensors is determined during image recording periods. The signal injectors inject a plurality of calibration voltages into the readout lines during calibration periods, and determines a gain function of an amplifier in one of the column processing circuits by measuring an output of the amplifier for the plurality of calibration voltages, the calibration period is between the imaging recording periods.

Abstract: The invention describes a metal container that comprises a cathode containing an insulated anode with gases at pressures less than a fraction (0.1-0.9) of a mmHg. Metallic normal glow discharge diode and triode devices with large cold cathode area as efficient charge generator to function as a power cell. A metallic glow discharge device comprising a cylindrical cathode and a coaxial insulated anode containing gas at very low pressure utilizing radial electric field. A metallic normal glow discharge diode device containing a planar geometry, with an insulated metallic plate parallel to the broad side of the container forms the anode, while the container acts as the cathode.

Abstract: An optical receiving circuit which suppresses a characteristic deterioration due to a wiring between a PD and a TIA and a method for manufacturing the optical receiving circuit are provided. A optical receiving circuit (300) comprises a photodiode (302), and a transimpedance amplifier (308) that supplies an electrical power source to the photodiode (302). The characteristic impedance of a wiring between the anode of the photodiode (302) and the transimpedance amplifier (308) is higher than the characteristic impedance of a wiring between the cathode of the photodiode (302) and the transimpedance amplifier (308).

Abstract: In a related-art image pickup device, there is a problem that the power consumption increases. A semiconductor device includes a plurality of pixel circuits connected to one vertical signal line SL, and an inverting amplification circuit configured to amplify a signal level obtained through the vertical signal line SL with an amplification factor determined according to a capacitance ratio between an input capacitor Ci and a feedback capacitor Cf, in which the feedback capacitor Cf is disconnected from an output of the inverting amplification circuit and connected to the vertical signal line SL in a charge recovery period set in a period between a first timing and a second timing, the first timing being a timing when amplification of an image pickup signal read from a first pixel circuit by the inverting amplification circuit has been completed, the second timing being a timing when amplification of a dark level signal read from a second pixel circuit by the inverting amplification circuit is started.

Abstract: The present disclosure relates to a semiconductor device. The semiconductor device includes a substrate, a first doping region, a second doping region, a third doping region, a first transient block unit and a second transient block unit. The first doping region is in the substrate. The second doping region is in the first doping region. The third doping region is in the first doping region. The first transient block unit is electrically connected to the second doping region. The second transient block unit is electrically connected between the third doping region and the first transient block unit.

Abstract: An image sensor may include a substrate having photoelectric conversion regions respectively formed on a plurality of pixels and charge trap regions overlapping with the respective photoelectric conversion regions and having depths or thicknesses that are different, for each of the respective pixel.

Abstract: A photoelectric conversion device includes: a first optical filter that has a first pattern periodically having a plurality of structures and is formed of a conductive material film disposed on a first photoelectric conversion element with an insulating film therebetween; and a first optical filter that has a second pattern periodically having a plurality of structures and is formed of a conductive material film disposed on a second photoelectric conversion element with the insulating film therebetween. The interval between the first pattern and the second pattern that are adjacent to each other is longer than a period of the structures in the first pattern and a period of the structures in the second pattern.

Abstract: There is provided an MPS diode comprising a first semiconductor layer that is an N type; P-type semiconductor regions and N-type semiconductor regions that are arranged alternately on one surface of the first semiconductor layer; and a Schottky electrode that is in Schottky junction with the N-type semiconductor regions and is arranged to be adjacent to and in contact with at least part of the P-type semiconductor regions. A donor concentration in an area of the N-type semiconductor region that is adjacent to and in contact with the first semiconductor layer is lower than the donor concentration in an area of the first semiconductor layer that is adjacent to and in contact with the N-type semiconductor region and is lower than the donor concentration in an area of the N-type semiconductor region that is adjacent to and in contact with the Schottky electrode. This configuration improves a breakdown voltage under applying a reverse bias voltage and reduces a rising voltage under applying a forward bias voltage.

Abstract: Image sensors, electronic apparatuses, and methods of manufacturing an image sensor are provided. More particularly, an image sensor having a plurality of photoelectric conversion elements included in a laminated body is provided. At least one of the photoelectric conversion elements includes organic photoelectric conversion elements. In addition, at least a first surface of the laminated body includes a curved light incident surface, which further includes a concave surface. The plurality of photoelectric conversion elements receive light through the concave light incident surface. The laminated body can be connected to a support structure.

Abstract: A light sensor arrangement according to the proposed principle comprises at least one first unshielded well (D0) and at least one second shielded well (D1) in a substrate (P). The at least one first unshielded well (D0) is being exposed to incident light (?) and configured to generate a first sensor signal (Ch0) as a function of the incident light (?). The at least one second shielded well (D1) in the substrate (p) being shielded from the incident light (?) and configured to generate a second sensor signal (Ch1) as a function of the incident light (?). The light sensor arrangement further comprises means for temperature compensation providing the first and second sensor signals (Ch0, Ch1) as temperature compensated sensor signals as a function of substrate temperature. Means to determine spectral content of the incident light (?) are provided to determine the spectral content as a function of the temperature compensated first and second sensor signals (Ch0, Ch1).

Abstract: The present disclosure relates to a detection layer on a substrate. For example, a detection layer may include perovskite crystals of the type ABX3 and/or AB2X4. A may include at least one monovalent, divalent or trivalent element from the fourth or a higher period in the periodic table and/or mixtures thereof. B may include a monovalent cation, the volumetric parameter of which is sufficient, with the respective element A, for perovskite lattice formation. X may be selected from the group consisting of anions of halides and pseudohalides. The layer may have a thickness of at least 10 ?m.

Abstract: A device (e.g., a Doherty amplifier) housed in an air cavity package includes one or more isolation structures over a surface of a substrate and defining an active circuit area. The device also includes first and second adjacent circuits within the active circuit area, first and second leads coupled to the isolation structure(s) between opposite sides of the package and electrically coupled to the first circuit, third and fourth leads coupled to the isolation structure(s) between the opposite sides of the package and electrically coupled to the second circuit, a first terminal over the first side of the package between the first lead and the third lead, a second terminal over the second side of the package between the second lead and the fourth lead, and an electronic component coupled to the package and electrically coupled to the first terminal, the second terminal, or both the first and second terminals.

Abstract: An optocoupler having a transmitter module and a receiver module that are galvanically isolated from each other and optically coupled with one another and are integrated in a common housing. The receiver module has a voltage source that has a number N of partial voltage sources mutually connected in series and constructed as semiconductor diodes. Each of the partial voltage sources has a semiconductor diode having a p-n junction, and the partial source voltages of the individual partial voltage sources each deviate by less than 20% from one another. Between each two successive partial voltage sources, a tunnel diode is formed and the partial voltage sources and the tunnel diodes are monolithically integrated together and jointly form a first stack having a top surface and a bottom surface, and the number N of the partial voltage sources is greater than or equal to three.

Abstract: A method and a device for reducing the extrinsic dark count of a superconducting nanowire single photon detector (SNSPD), it comprises the steps of: integrating a multi-layer film filter on the superconducting nanowire single photon detector; the multi-layer film filter is a device implemented by a multi-layer dielectric film and having a band-pass filtering function. The extrinsic dark count is the dark count triggered by optical fiber blackbody radiance and external stray light. The superconducting nanowire single photon detector comprises: a substrate having an upper surface integrated with an upper anti-reflection layer and a lower surface integrated with a lower anti-reflection layer; an optical cavity structure; a superconducting nanowire; and a reflector. The present invention is easy to operate, and only needs to integrate the multi-layer film filter on the substrate of the SNSPD to filter non-signal radiation.

Abstract: Aspects of the subject disclosure may include, for example, a waveguide including a plurality of devices that facilitate generating scattered electromagnetic waves from electromagnetic waves propagating on a surface of a transmission medium. The scattered electromagnetic waves combine to generate a wireless signal having a directionality based on a separation between plurality of devices and a wavelength of the electromagnetic waves. Other embodiments are disclosed.

Abstract: An image sensor includes a plurality of photodetectors that are identically sized and fabricated in semiconductor material with identical semiconductor processing conditions. The photodetectors are organized into virtual high-low sensitivity groupings, each including a first photodetector and a second photodetector. A plurality of attenuators is disposed over the semiconductor material. Each one of the plurality of attenuators is disposed along an optical path between a microlens and the first photodetector of each virtual high-low sensitivity grouping such that all incident light directed into the first photodetector is directed through a respective one of the plurality of attenuators. There is no attenuator along a second optical path between a microlens and the second photodetector of each virtual high-low sensitivity grouping such that all the incident light directed into the second photodetector is not directed through one of the plurality of attenuators.

Abstract: An optoelectronics semiconductor chip has a substrate and a semiconductor body arranged on the substrate and has a semiconductor layer sequence. The semiconductor layer sequence includes an active region arranged between a first semiconductor layer and a second semiconductor layer and is provided to generate or to receive radiation. The first semiconductor layer is electrically conductively connected to a first contact and to a second contact. The first contact is formed on a front side of the substrate, facing the semiconductor body. The second contact is formed on a rear side of the substrate, facing away from the semiconductor body. The first contact and the second contact are electrically conductively connected to each other.

Abstract: An image sensor pixel may include a photodiode, a charge storage region, a floating diffusion node, and a capacitor. A first transistor may be coupled between the photodiode and the charge storage region. A second transistor may be coupled between the charge storage region and the capacitor. The photodiode may generate image signals corresponding to incident light. Multiple image signals may be summed at the charge storage region. The second transistor may determine a portion of the image signal that may be sent to the capacitor for storage. The portion of the image signal that is sent to the capacitor may be a low gain signal. A remaining portion of the image signal may be a high gain signal. The image sensor pixel may also include readout circuitry that is configured to readout low and high gain signals stored at the floating diffusion node in a double-sampling readout operation.

Abstract: Provided are a photosensor and a method of operating the same. The photosensor includes a lower electrode, a semiconductor layer, a 2-dimensional material layer, and an upper electrode. Photocurrent generated due to externally radiated light may be operated in a multiple detection mode including a lateral detection mode and a vertical detection mode. The upper electrode may include a plurality of electrode elements, which may be formed of the same conductive material or different conductive materials.

Abstract: Electro-mechanical designs for MEMS scanning mirrors are described. In various embodiments, a driving coil may be situated on a reflective portion of a MEMS mirror. In some embodiments, a sensing coil may be situated partially or entirely on an outer frame portion of the MEMS mirror. Other embodiments are described and claimed.

Abstract: Due to strong needs to reduce the dimensions and the cost of the RF filters and to reduce the number of filters required in an mobile handsets and wireless system covering numbers of operation bands, tunable RF filters which can cover as many bands or frequency ranges as possible are needed so that the number of filters can be reduced in the mobile handsets and wireless systems. This invention provides tunable surface acoustic wave resonators and filters utilizing semiconducting piezoelectric layers having embedded or elevated electrode doped regions. Both metallization ratio and loading mass are changed by varying a DC biasing voltage to effect a change in the resonant frequency of the tunable SAW devices.

Abstract: A photoreceptor protein-based spectrophotometer may include a field-effect transistor and a photoreceptor protein on the field-effect transistor (FET), the photoreceptor protein exhibiting change in electrical properties by absorbing light and being activated. Since the spectrophotometer can convert the light absorbed by the photoreceptor protein to an electrical signal using the FET, it can mimic human vision by using human photoreceptor proteins. The spectrophotometer can measure the color, intensity, etc. of light of broad wavelength ranges as in human vision. Thus, the spectrophotometer can be applied to the development of artificial vision, etc.

Abstract: An optically powered media conversion device for performing optical to electrical conversion is disclosed. The conversion device includes at least one optical coupler for receiving at least one optical signal comprising at least one wavelength, wherein the at least one optical coupler extracts energy from the at least one optical signal, and at least one detector for extracting data from the at least one optical signal and converting the optical signal to an electrical signal using a photovoltaic process. The conversion device further includes a transmitter for converting an electrical signal to an optical signal and transmitting the optical signal to a first device.

Abstract: An avalanche photodiode includes a cathode region and an anode region. A lateral insulating region including a barrier region and an insulating region surrounds the anode region. The cathode region forms a planar optical guide within a core of the cathode region, the guide being configured to guide photons generated during avalanche. The barrier region has a thickness extending through the planar optical guide to surround the core and prevent propagation of the photons beyond the barrier region. The core forms an electrical-confinement region for minority carriers generated within the core.

Abstract: An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.

Abstract: Disclosed are methods and systems for compensating for process direction banding associated with a document processing system including a ROS. According to one exemplary embodiment, a ROS driver uses a plurality of beam delay/advance values to compensate for banding caused by an interaction of a halftone pattern and process direction density variations associated with the ROS.

Abstract: A detector for high-energy radiation, e.g., for x-radiation and/or UV radiation, may include (a) a substrate having a first electrical contact, (b) optionally a first intermediate layer, (c) a layer including an organic matrix of a photoactive material and insoluble scintillator particles distributed substantially homogeneously in the organic matrix, (d) optionally a second intermediate layer, and (e) a second electrical contact, wherein the mixture ratio between the scintillator particles and the organic matrix in layer (c) is selected in such a way that the intermediate space filled with the organic matrix has a distance between two scintillator particles that corresponds to at most five times the depth of penetration of the emitted radiation of the scintillator particles. A method for producing a corresponding detector is also disclosed.

Abstract: An optical device, comprising an optical device, comprising an optical beam sweeper that includes a multi-wavelength laser source and an optical power splitter. The optical power splitter has an optical input optically coupled to the multi-wavelength laser source, the optical power splitter having N optical outputs, each optical output connected by a corresponding optical pathway of a parallel array to an optical output surface of the optical beam sweeper. N parallel optical paths connect the optical input to the optical output surface, each optical path including a corresponding one the optical pathways and having a different optical path length than the one or more other optical paths, the optical path lengths differing in a wavelength-dependent way.

Abstract: A flexible substrate has a major surface and a sensor attached to and aligned with the major surface of the substrate. The sensor may have an elastic body containing conductive nanotubes homogeneously distributed therein to form a conductive path and at least two electrodes in electrical connection with the conductive path. Balloons and flexible elements used in medical procedures are particularly useful.

Abstract: The present disclosure provides a neutron imaging detector and a method for detecting neutrons. In one example, a method includes providing a neutron imaging detector including plurality of memory cells and a conversion layer on the memory cells, setting one or more of the memory cells to a first charge state, positioning the neutron imaging detector in a neutron environment for a predetermined time period, and reading a state change at one of the memory cells, and measuring a charge state change at one of the plurality of memory cells from the first charge state to a second charge state less than the first charge state, where the charge state change indicates detection of neutrons at said one of the memory cells.

Abstract: A method and a system for terahertz detection, using at least a first and a second electrodes separated by a centro-symmetric material. The system comprises at least a first and a second electrodes with conductive pads for connection to a voltage source, separated by a centro-symmetric material; the method comprising second harmonic generation in the centro-symmetric material by overlapping of a probe and a terahertz beams.

Abstract: An extreme ultraviolet light source device that can stably and efficiently provide EUV emission. The EUV light source device includes a first laser source that irradiates a high-temperature plasma raw material with a laser beam, and a second laser source that, after the high-temperature plasma raw material is irradiated with the laser beam and before effective extreme ultraviolet light is emitted, irradiates the raw material in that region which is irradiated with the laser beam, with a second laser beam. The EUV light source device also includes a return light blocking unit that prevents return light of the laser beam, which is emitted from the first laser source, from reaching a light emission opening of the second laser source.

Abstract: An image sensor with an array of image sensor pixels is provided. Each image pixel may include a photodiode and associated pixel circuits formed in the front surface of a semiconductor substrate. Buried light shielding structures may be formed on the back surface of the substrate to prevent pixel circuitry that is formed in the substrate between two adjacent photodiodes from being exposed to incoming light. The buried light shielding structures may be lined with absorptive antireflective coating material to prevent light from being reflected off the surface of the buried light shielding structures. Forming buried light shielding structures with absorptive antireflective coating material can help reduce optical pixel crosstalk and enhance signal to noise ratio.

Abstract: The disclosure provides for interference mitigation for wireless signals in unlicensed spectrum. A wireless device may receive a combined signal including a first radio access technology (RAT) signal and a second RAT signal. The wireless device may generate, using a first RAT receiver in a first processing path, a channel estimate for the first RAT signal based on a previously decoded signal of the first RAT. The wireless device may reduce interference to the second RAT signal caused by the first RAT signal, in a second processing path, using the channel estimate. The wireless device may further decode the second RAT signal. The wireless device may remodulate the decoded signal using a transmitter to generate a remodulated second RAT signal. The remodulated second RAT signal may be canceled from the combined signal. The wireless device may decode a remaining portion of the combined signal including the first RAT signal.

Abstract: A compound for an organic photoelectric device is represented by Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device include the same.

Abstract: A semiconductor photodetector has at least one unit pixel having a photoelectric conversion part, a charge storage part, and a detection circuit. The photoelectric conversion part includes a charge multiplication region in which incident light is converted into a charge, and the charge is multiplied by avalanche multiplication. The charge storage part is connected to the photoelectric conversion part and stores a signal charge from the photoelectric conversion part. The detection circuit is connected to the charge storage part, converts the signal charge stored in the charge storage part into a voltage, passes the voltage through an amplifier to amplify the voltage, and outputs the amplified voltage.