Abstract: Embodiments are directed to visualizing electromagnetic (EM) particle emissions in a computer-generated virtual environment. In one scenario, a computer system accesses portions of data representing EM particle emissions emitted by a virtualized EM particle emitter. The computer system generates a particle visualization that includes at least a portion of the EM particle emissions being emitted from the virtualized EM particle emitter within the virtual environment. The particle visualization includes an indication of the EM particle emissions' interactions with other virtual or non-virtual elements in the virtual environment. The computer system then presents the generated particle visualization in the computer-generated virtual environment. In some cases, the computer system further receives user input intended to interact with virtual elements within the virtual environment.

Abstract: A method of analyzing growth of a two-dimensional material includes forming a two-dimensional material layer includes defects on a substrate, depositing detection material layers on the defects, and one of (i) capturing an image of the two-dimensional material layer on which the detection material layers are deposited and processing the captured image, or (ii) obtaining map coordinates of the detection material layers and processing the obtained map coordinates.

Abstract: A scanning electron microscope according to the present invention includes: an electron source that produces an electron beam; a trajectory dispersion unit that disperses the trajectory of an electron beam of electrons with a different energy value; a selection slit plate having a selection slit that selects the energy range of the dispersed electron beam; and a transmittance monitoring unit that monitors the transmittance of an electron beam, which is being transmitted through the selection slit. Accordingly, there can be provided a scanning electron microscope equipped with an energy filter that implements a stable reduction in energy distribution.

Abstract: A heating device having a heating element patterned into a robust MEMs substrate, wherein the heating element is electrically isolated from a fluid reservoir or bulk conductive sample, but close enough in proximity to an imagable window/area having the fluid or sample thereon, such that the sample is heated through conduction. The heating device can be used in a microscope sample holder, e.g., for SEM, TEM, STEM, X-ray synchrotron, scanning probe microscopy, and optical microscopy.

Abstract: When an electrode (29) such as a grid applied with a negative voltage is installed in front of an objective lens (23), low energy electrons among secondary electrons (25) generated from a sample (24) by an electron beam or the like is reflected by the electrode to come into a detector (22) installed in the sample (24) side, while electrons of higher energy are not detected, since they are not reflected by the electrode. Accordingly, since only the electrons of lower energy of the secondary electrons can be detected by discriminating the secondary electrons by the energy, it is possible to obtain a detection signal, e.g., rich in the information on the surface state of the sample.

Abstract: The invention relates to a scanning probe microscope, having: (a) a scanning device for scanning a measurement tip over a surface; (b) a cantilever for the measurement tip, wherein the cantilever has a torsion region; (c) wherein the torsion region is configured such that it undergoes torsion when a control signal is applied and thereby pivots the measurement tip; and (d) a control device for outputting the control signal when the measurement tip scans a region of the surface that can be examined more closely with a pivoted measurement tip than without pivoting the measurement tip.

Abstract: A method and apparatus for processing a specimen with two or more particle beams, wherein the specimen has a milled side that is processed by a first particle beam and observed by a second particle beam. The specimen is milled during a first milling operation by the first particle beam with the specimen in a first position. Thereafter, the specimen tilts in a second position around an axis of tilt of the specimen. Thereafter, the specimen is milled during a second milling operation. Milling can be performed during continuous tilting of the specimen around the axis of tilt. The axis of tilt of the specimen intersects the milled side. In all the aforementioned positions of the specimen, the second particle beam impinges on the milled side, which enables monitoring of the milling in real time.

Abstract: The invention relates to a method for generating an image of an object (114) using a particle beam device (100) generating a beam of charged particles. Moreover, the invention relates to a particle beam device (100) for carrying out this method. In particular, the particle beam device (100) is an electron beam device and/or an ion beam device. The method comprises selecting a desired value of a depth of field from a plurality of values of the depth of field by a user, wherein each value of the plurality of values of the depth of field is associated with a specific resolution of the particle beam device (100), the specific resolution being achieved when using the desired value of the depth of field.

Abstract: Provided is a scanning probe microscope capable of performing observation with high accuracy even when a beam splitter is configured to be movable. When checking positions of a sample and a cantilever in a scanning probe microscope, by disposing an optical microscope to face a first opening portion of a top surface of a housing, and by gripping and rotating an operating portion provided on a side surface of the housing, a user rotates and moves a beam splitter held by a holding portion in the housing, and retracts the beam splitter from the field of view of the optical microscope. Therefore, the beam splitter can always be disposed in the housing, and the user can be prevented from touching the beam splitter. As a result, it is possible to prevent the beam splitter from being damaged or stains from adhering to the beam splitter. Further, the moving distance of the bears splitter 6 can be shortened. Therefore, it is possible to suppress the occurrence of a deviation in the position of the beam splitter.

Abstract: A system and method involve applying an electron beam to a sample and obtaining an image of the sample with the applied electron beam. An orientation of the sample relative to the sample's zone axis is automatically determined based on a distribution of reflections in the image. The orientation of the sample is automatically adjusted to align with the sample's zone axis based on the determined orientation.

Abstract: A method for lithography nanotopography metrology is provided. The method includes receiving wafer thickness data for a plurality of wafers and applying an elongated filter to the wafer thickness data to produce a filtered thickness map for each of the plurality of wafers. The filter has a first cutoff wavelength in the x-direction and a second cutoff wavelength in the y-direction. The method further includes generating a report including at least one wafer metric associated with the filtered thickness map.

Abstract: An Apparatus and method are provided for sensing temperature of a sample. Apparatus 2 has a sensor 5, positionable relative to a sample 3, which is responsive to temperature of a region of the sample at each position of the sensor. Sensor circuitry 10 provides a response signal indicative of the sensor response at the position of the sensor. Sample-temperature controller 12 controls temperature of sample 3 independently of sensor 5. Sample-temperature controller 12 effects a time-dependent modulation of the sample temperature such that a time-dependent heat flux is generated between the sample and the sensor at the position of the sensor. Temperature analyzer 11 extracts time-averaged and time-dependent components of the response signal due to the modulation of the sample temperature, and processes the components to produce an output indicative of temperature of the sample at the position of the sensor.

Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

Abstract: An electron-optical system for inspecting or reviewing an edge portion of a sample includes an electron beam source configured to generate one or more electron beams, a sample stage configured to secure the sample and an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the one or more electron beams onto an edge portion of the sample. The system also includes a sample position reference device disposed about the sample and a guard ring device disposed between the edge of the sample and the sample position reference device to compensate for one or more fringe fields. One or more characteristics of the guard ring device are adjustable. The system also includes a detector assembly configured to detect electrons emanating from the surface of the sample.

Abstract: The system described herein detects charged particles which, for example, are generated by interaction of a charged particle beam with an object to be analyzed using, for example, a particle beam device. Detection is carried out for imaging of the object. The system described herein allows detection of charged particles with the same detection principle when the ambient pressures in an object chamber are in a first pressure range being lower than or equal to 10?3 hPa or in a second pressure range being equal to or above 10?3 hPa. When operating with the object chamber in the second pressure range, the system described herein generates photons in a scintillator using cascade particles generated by using the charged particles and a gas, and detects the photons using a light detector.

Abstract: A method for processing a semiconductor wafer is provided. The method includes positioning the semiconductor wafer in a scanning electron microscope (SEM). The method further includes producing images of at least a portion of a test region that is designated on a process surface of the semiconductor wafer. The method also includes adjusting the condition of a charged particle beam of the SEM at a check point selected in the test region. In addition, the method includes producing images of another portion of the test region after the condition of the charged particle beam is adjusted.

Abstract: There is provided a beam alignment method capable of easily aligning an electron beam with a coma-free axis in an electron microscope. The method starts with tilting the electron beam (EB) in a first direction (+X) relative to a reference axis (A) and obtaining a first TEM (transmission electron microscope) image. Then, the beam is tilted in a second direction (?X) relative to the reference axis, the second direction (?X) being on the opposite side of the reference axis (A) from the first direction (+X), and a second TEM image is obtained. The reference axis is incrementally varied so as to reduce the brightness of the differential image between a power spectrum of the first TEM image and a power spectrum of the second TEM image.

Abstract: An optical inspector with feedback capability includes an optical device that captures an image when a sample is within the field of view of the optical device, a storage device that stores the captured image, a processor that determines a quality characteristic value of the sample based on the captured image, and an interface circuit that outputs inspection data or a command based on the quality characteristic value. A method of controlling a sample processing line is also disclosed, the method including capturing an image of a sample traversing the processing line, determining a quality characteristic of the sample based at least in part on the captured image, and causing the operation of a device included in the processing line to be adjusted based at least in part on the quality characteristic value. In one example, the optical inspector is an in-flight 3D inspector located in the processing line.

Abstract: Provided is a method and apparatus for displaying an image showing an object. The method of displaying an image showing an object includes: displaying a model corresponding to the object; receiving a user input for selecting, from the model, a region of interest (ROI) included in the object; and displaying an image showing the ROI based on the user input.

Abstract: A method of imaging a specimen using ptychography includes directing a charged-particle beam from a source through an illuminator so as to traverse the specimen and land upon a detector, detecting a flux of radiation emanating from the specimen with the detector, calculating at least one property of a charged-particle wavefront exiting the specimen based on using an output of the detector in combination with applying a mathematical reconstruction technique, wherein the at least one property comprises a phase of the wavefront, and wherein applying the mathematical construction technique comprises directly reconstructing the phase of the wavefront to determine a reconstructed phase of the wavefront. An associated apparatus is also described.

Abstract: Methods and apparatuses are provided for automatically controlling and stabilizing aspects of a scanning probe microscope (SPM), such as an atomic force microscope (AFM), using Peak Force Tapping (PFT) Mode. In an embodiment, a controller automatically controls periodic motion of a probe relative to a sample in response to a substantially instantaneous force determined and automatically controls a gain in a feedback loop. A gain control circuit automatically tunes a gain based on separation distances between a probe and a sample to facilitate stability. Accordingly, instability onset is quickly and accurately determined during scanning, thereby eliminating the need of expert user tuning of gains during operation.

Abstract: A method for operating a multi-beam particle optical unit comprises includes providing a first setting of effects of particle-optical components, wherein a particle-optical imaging is characterizable by at least two parameters. The method also includes determining a matrix A, and determining a matrix S. The method further includes defining values of parameters which characterize a desired imaging, and providing a second setting of the effects of the components in such a way that the particle-optical imaging is characterizable by the parameters having the defined values.

Abstract: Aspects of the present invention include systems and devices useful for surface chemical analysis of solid samples by Tip Enhanced Raman Spectrometry (“TERS”), and particularly it relates to devices useful for chemical analysis of molecular compounds located either on or within thin surface layer of solid samples. Even more particularly, aspects of the present invention relate to systems, and devices for non-destructive analysis combining both high sensitivity and high spatial resolution of analysis of chemical compounds located or distributed on the surface of solid samples with obtaining important information regarding vibration spectra of atoms and molecular groups contained in a thin surface layer of solid samples. These objectives are realized by implementation of computer-assisted systems that use sensors to carefully regulate the motion of, and force applied to, probes of atomic force microscopes.

Abstract: A system for performing nano beam diffraction (NBD) analysis, includes a focused ion beam (FIB) device for preparing a transmission electron microscopy (TEM) sample, a broad beam ion mill for milling the TEM sample to remove a surface portion of the TEM sample, and a strain analyzer for performing NBD analysis on the milled TEM sample to acquire diffraction data.

Abstract: A scanning probe microscope includes a cantilever having a probe at a free end thereof; a scanner to three-dimensionally relatively move the probe and a sample; a vibrator to vibrate the cantilever based on a vibrating signal; a displacement detector to detect a displacement of the cantilever and to output a displacement signal indicating the displacement; and a phase difference information detecting section to generate a phase signal including information of a phase difference between the vibrating signal and the displacement signal. The phase difference information detecting section includes a phase regulating portion to provide, to the phase difference, a phase offset to cancel an initial phase difference present in a state in which the probe is not in contact with the sample.

Abstract: A method and apparatus are provided for aligning a sample in a charged particle beam system. The charged particle beam is directed toward the sample to obtain a sample diffraction pattern. The sample diffraction pattern is compared with reference diffraction patterns having known misalignments to determine which reference pattern most closely matches the sample pattern. The known alignment of the best-matching reference diffraction pattern is used to correct the tilt of the sample. The “patterns” compared can be lists of bright spots with corresponding intensities rather than images.

Abstract: A coated probe is provided. The probe includes a probe body and a cladding layer. The probe body has a terminal. The cladding layer covers the surface of the terminal of the probe body, wherein the cladding layer includes a carbon nano-material layer, and the carbon nano-material layer includes a carbon nano-material.

Abstract: The invention relates to a device for correlative scanning transmission electron microscopy (STEM) and light microscopy. In order to create a device for correlative microscopy which enables an improved combination of light microscopy and STEM methods, a STEM detector (7) according to the invention is combined with a photo-optical lens (8). This detection device combines the efficient detection by means of STEM microscopy of materials having a high atomic number, for example specific nanoparticle markers in a specimen in a liquid, such as a cell, with simultaneous light microscopy.

Abstract: A technique capable of improving the ability to observe a specimen using an electron beam in an energy region which has not been conventionally given attention is provided. This specimen observation method comprises: irradiating the specimen with an electron beam; detecting electrons to be observed which have been generated and have obtained information on the specimen by the electron beam irradiation; and generating an image of the specimen from the detected electrons to be observed. The electron beam irradiation comprises irradiating the specimen with the electron beam with a landing energy set in a transition region between a secondary emission electron region in which secondary emission electrons are detected and a mirror electron region in which mirror electrons are detected, thereby causing the secondary emission electrons and the mirror electrons to be mixed as the electrons to be observed.

Abstract: A simulation device calculates a detection number of electrons generated by charged particles radiated to a sample by a simulation and generates a simulation image of the sample. The simulation device holds penetration length information (272) in which incidence conditions of the charged particles and a penetration length are associated with each other, sample configuration information (271) which shows a configuration of a sample, and emission electron number information in which the incidence conditions of the charged particles and an emission electron number are associated with each other. The simulation device calculates the number of electrons emitted from a predetermined incidence point, on the basis of incidence conditions at the predetermined incidence point, the penetration length information (272), the sample configuration information (271), and the emission electron number information.

Abstract: An object of the present invention is to provide: a wiring method in which wiring is performed in a vacuum chamber of a charged particle device without using gas deposition or the like; and a charged particle device. In order to achieve the above-described object, the present invention proposes: a wiring method in which a wiring line composed of an ionic liquid is formed by dropping an ionic liquid on a sample or preparing an ionic liquid on a sample table, on which a sample is placed in advance, and irradiating a wiring track between a wiring start point and a wiring end point with a charged particle beam; and a charged particle device. According to this configuration, wiring can be performed in a vacuum chamber of a charged particle device without using a gas deposition method or the like.

Abstract: A device for measuring electron orbital angular momentum states in an electron microscope includes the following components aligned sequentially in the following order along an electron beam axis: a phase unwrapper (U) that is a first electrostatic refractive optical element comprising an electrode and a conductive plate, where the electrode is aligned perpendicular to the conductive plate; a first electron lens system (L1); a phase corrector (C) that is a second electrostatic refractive optical element comprising an array of electrodes with alternating electrostatic bias; and a second electron lens system (L2). The phase unwrapper may be a needle electrode or knife edge electrode.

Abstract: A resolving aperture assembly for an ion implantation system has a first plate and a second plate, where the first plate and second plate generally define a resolving aperture therebetween. A position of the first plate with respect to the second plate generally defines a width of the resolving aperture. One or more actuators are operably coupled to one or more of the first plate and second plate and are configured to selectively vary the position the first plate and second plate with respect to one another, thus selectively varying the width of the resolving aperture. A servo motor precisely varies the resolving aperture width and a pneumatic cylinder independently selectively closes the resolving aperture. A downstream position actuator varies a position of the resolving aperture along a path of the ion beam, and a controller controls the one or more actuators based on desired properties of the ion beam.

Abstract: A technique to identify non-visual defects, such as SEM non-visual defects (SNVs), includes generating an image of a layer of a wafer, evaluating at least one attribute of the image using a classifier, and identifying the non-visual defects on the layer of the wafer. A controller can be configured to identify the non-visual defects using the classifier. This controller can communicate with a defect review tool, such as a scanning electron microscope (SEM).

Abstract: A photomask lithography simulation model is created for making a semiconductor chip. Poor metrology is filtered and removed from a contour-specific metrology dataset to improve performance of the photomask. Filtering is performed by the application of a weighting scheme.

Abstract: A semiconductor carrier profiling method utilizes a scanning tunneling microscope and shielded probe with an attached spectrum analyzer to measure power loss of a microwave frequency comb generated in a tunneling junction. From this power loss and by utilizing an equivalent circuit or other model, spreading resistance may be determined and carrier density from the spreading resistance. The methodology is non-destructive of the sample and allows scanning across the surface of the sample. By not being destructive, additional analysis methods, like deconvolution, are available for use.

Abstract: A method for generating cross-sectional profiles using a scanning electron microscope (SEM) includes scanning a sample with an electron beam to gather an energy-dispersive X-ray spectroscopy (EDS) spectrum for an energy level to determine element composition across an area of interest. A mesh is generated to locate positions where a depth profile will be taken. EDS spectra are gathered for energy levels at mesh locations. A number of layers of the sample are determined by distinguishing differences in chemical composition between depths as beam energies are stepped through. A depth profile is generated for the area of interest by compiling the number of layers and the element composition across the mesh.

Abstract: A current measurement device is provided for use with a measurement target having a conductive path. The current measurement device includes a non-contact current sensor to be positioned adjacent the conductive path of the measurement target. A calibration current superimposing unit, including a first electrode and a second electrode to be positioned in contact with the conductive path of the measurement target, is configured to output a calibration current to flow through the conductive path between the first electrode and the second electrode. A controller, coupled to the non-contact current sensor and the calibration current superimposing unit, is configured to control the output of the calibration current from the calibration current superimposing unit, and is configured to sample a signal from the non-contact current sensor positioned adjacent the conductive path of the measurement target.

Abstract: A method for generating cross-sectional profiles using a scanning electron microscope (SEM) includes scanning a sample with an electron beam to gather an energy-dispersive X-ray spectroscopy (EDS) spectrum for an energy level to determine element composition across an area of interest. A mesh is generated to locate positions where a depth profile will be taken. EDS spectra are gathered for energy levels at mesh locations. A number of layers of the sample are determined by distinguishing differences in chemical composition between depths as beam energies are stepped through. A depth profile is generated for the area of interest by compiling the number of layers and the element composition across the mesh.

Abstract: An improved microreactor for use in microscopy, use of said microreactor, and a microscope comprising said reactor. The present invention is in the field of microscopy, specifically in the field of electron and focused ion beam microscopy (EM and FIB), and in particular Transmission Electron Microscopy (TEM). However its application is extendable in principle to any field of microscopy, especially wherein characteristics of a (solid) specimen (or sample) are studied in detail, such as during a reaction.

Abstract: A probe actuation system has a detection system arranged to measure a position or angle of a probe to generate a detection signal. An illumination system is arranged to illuminate the probe. Varying the illumination of the probe causes the probe to deform which in turn causes the detection signal to vary. A probe controller is arranged to generate a desired value which varies with time. A feedback controller is arranged to vary the illumination of the probe according to the detection signal and the desired value so that the detection signal is driven towards the desired value. The probe controller receives as its inputs a detection signal and a desired value, but unlike conventional feedback systems this desired value varies with time. Such a time-varying desired value enables the probe to be driven so that it follows a trajectory with a predetermined speed. A position or angle of the probe is measured to generate the detection signal and the desired value represents a desired position or angle of the probe.

Abstract: Systems and methods for monitoring component deformation are provided. The component has an exterior surface. A method includes directly measuring a passive strain indicator configured on the exterior surface of the component along an X-axis, a Y-axis and a Z-axis to obtain X-axis data points, Y-axis data points, and Z-axis data points. The X-axis, Y-axis and Z-axis are mutually orthogonal. The method further includes assembling a three-dimensional profile of the passive strain indicator based on the X-axis data points, Y-axis data points and Z-axis data points.

Abstract: Apparatuses and methods are provided that minimize the effects of dark-current pulses. For example, in one embodiment of the invention, a method is provided where a first pixel is struck (i.e., a primary pixel). Pixels struck within a fixed time frame after the primary pixel is struck are referred to as secondary pixels. After a short fixed time frame has expired, the number of primary and secondary pixels is added. If the count exceeds a threshold, the primary pixel was activated by the first (or early) photon from a true gamma event. If the threshold is not met then it is likely the primary pixel generated a dark pulse that should be ignored.

Abstract: Multiply patterned metrology targets and target design methods are provided to enable pitch walk measurements using overlay measurements. Multiply patterned structures having single features or spacers produced simultaneously and sharing a common pitch with the paired features or spacers are used to express pitch walk as a measurable overlay between the structures. For example, targets are provided which comprise a first multiply patterned structure having a single left-hand feature or spacer produced simultaneously and sharing a common pitch with the respective paired features or spacers, and a second multiply patterned structure having a single right-hand feature or spacer produced simultaneously and sharing a common pitch with the respective paired features or spacers.

Abstract: The system described herein analyzes an object using a charged particle beam device, such as an electron beam device and/or an ion beam device. The charged particle beam device is used to generate high resolution 3D data sets by sequentially removing material from the object, exposing surfaces of the object and generating images of the surfaces. When removing material from the object, an opening having sides is generated. Lamellas are generated using the sides and material characteristics of those lamellas are identified. Moreover, filtered data is generated for each pixel of images of the sides of the opening. The method uses the information with respect to the identified material characteristics, the images of the sides and the filtered data of those images to obtain information on the material characteristics for each pixel of each surface generated when sequentially removing material from the object.

Abstract: A method includes forming a first nitride layer on a semiconductor substrate, forming a first oxide layer on the first nitride layer, forming a first trench through the first oxide layer, the first nitride layer and a portion of the semiconductor substrate, forming a first spacer on a sidewall of the first trench, forming a second trench in the semiconductor substrate by using the first spacer as a mask, forming a third trench, forming a second oxide layer in the second trench, wherein the second oxide layer laterally extends into the semiconductor substrate and under the first spacer, forming a second spacer on a sidewall of the third trench, and removing a portion of the first nitride layer and a portion of the semiconductor substrate by etching and using the second spacer as a mask to form a fin structure on the second oxide layer.

Abstract: A system, computer readable medium and a method for material analysis, the method may include (i) receiving or generating (a) an estimated composition of a microscopic element; wherein the estimated composition is responsive to an energy spectrum of, at least, the microscopic element; wherein the energy spectrum is obtained by an energy dispersive X-ray (EDX) detector; additional information related to, at least, the microscopic element, wherein the additional information is not obtained by the energy dispersive X-ray detector; and (ii) resolving an ambiguity in the estimated composition in response to the additional information, wherein the ambiguity occurs when the energy spectrum comprises a predefined energy peak that is attributed to a predefined material of ambiguous EDX composition determination.

Abstract: The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.

Abstract: Presented herein are systems and methods for performing sequencing, including fluorescence in situ sequencing. In one embodiment, a confocal time delay and integration (TDI) line scan imaging system may include various pinhole and/or slit aperture mechanisms in front of the image sensor. The system may also include structures with focusing strips on a substrate in contact with the tissue sample to be imaged. Alternatively, these strips may be cut into the tissue sample. The system may also include configurations and methods of placing a tissue sample inside a reaction chamber of a flow cell during the assembly of the flow cell and then performing chemistry operations on the tissue sample. The flow cells may use an open container for performing chemistry operations on the tissue sample.

Abstract: A hybrid extreme ultraviolet (EUV) imaging spectrometer includes: a radiation source to: produce EUV radiation; subject a sample to the EUV radiation; photoionize a plurality of atoms of the sample; and form photoions from the atoms subject to photoionization by the EUV radiation, the photoions being desorbed from the sample in response to the sample being subjected to the EUV radiation; an ion detector to detect the photoions: as a function of a time-of-arrival of the photoions at the ion detector after the sample is subjected to the EUV radiation; or as a function of a position of the photoions at the ion detector; an electron source to: produce a plurality of primary electrons; subject the sample to the primary electrons; and form scattered electrons from the sample in response to the sample being subjected to the primary electrons; and an electron detector to detect the scattered electrons: as a function of a time-of-arrival of the scattered electrons at the electron detector after the sample is subjected