Abstract: A high voltage inspection system that includes a vacuum chamber; electron optics that is configured to direct an electron beam towards an upper surface of a substrate; a substrate support module that comprises a chuck and a housing; wherein the chuck is configured to support a substrate; wherein the housing is configured to surround the substrate without masking the electron beam, when the substrate is positioned on the chuck during a first operational mode of the high voltage inspection system; and wherein the substrate, the chuck and the housing are configured to (a) receive a high voltage bias signal of a high voltage level that exceeds ten thousand volts, and (b) to maintain at substantially the high voltage level during the first operational mode of the high voltage inspection system.

Abstract: The invention relates to a collimator electrode stack (70), comprising: —at least three collimator electrodes (71-80) for collimating a charged particle beam along an optical axis (A), wherein each collimator electrode comprises an electrode body with an electrode aperture for allowing passage to the charged particle beam, wherein the electrode bodies are spaced along an axial direction (Z) which is substantially parallel with the optical axis, and wherein the electrode apertures are coaxially aligned along the optical axis; and —a plurality of spacing structures (89) provided between each pair of adjacent collimator electrodes and made of an electrically insulating material, for positioning the collimator electrodes at predetermined distances along the axial direction. Each of the collimator electrodes (71-80) is electrically connected to a separate voltage output (151-160). The invention further relates to a method of operating a charged particle beam generator.

Abstract: A charged-particle beam microscope is provided for imaging a sample. The microscope has a vacuum chamber to maintain a low-pressure environment. A stage is provided to hold a sample in the vacuum chamber. The microscope has a compact evaporator in the vacuum chamber to evaporate and deposit a coating onto a surface of the sample. The microscope also has a charged-particle beam column is provided to direct a charged-particle beam onto the coating on the surface of the sample. The charged-particle beam column includes a charged-particle beam source to generate a charged-particle beam and charged-particle beam optics to converge the charged-particle beam onto the sample. A detector is provided to detect charged-particle radiation emanating from the coating on the surface of the sample to generate an image. A controller analyzes the detected charged-particle radiation to generate an image of the sample.

Abstract: Disclosed are a method for eliminating self-magnetization of a mask, a method for manufacturing a substrate and a mask testing device. The mask may include a plurality of metal stripes spaced from each other. The method may include a step of: energizing the mask, so as to enable the plurality of metal stripes to carry like charges, thereby separating every metal stripe from other adjacent metal stripes bonded together.

Abstract: The objective of the present invention is to provide a charged particle beam device, wherein the positional relationship between reflected electron detection elements and a sample and the vacuum state of the sample surroundings are evaluated to select automatically a reflected electron detection element appropriate for acquiring an intended image. In this charged particle beam device, all the reflected electron detection elements are selected when the degree of vacuum inside the sample chamber is high and the sample is distant from the reflected electron detectors, while a reflected electron detection element appropriate for acquiring a compositional image or a height map image is selected when the degree of vacuum inside the sample chamber is high and the sample is close to the reflected electron detectors. When the degree of vacuum inside the sample chamber is low, all the reflected electron detection elements are selected.

Abstract: The present invention provides semiconductor defect classification equipment for classifying a defect in a semiconductor wafer. The semiconductor defect classification equipment is provided with: a display unit; a storage unit that stores an inspection image including an inspection object portion on the semiconductor wafer and design data of the semiconductor wafer including a plurality of manufacturing steps; and an processing unit that displays the inspection image and the design data on the display unit. The processing unit acquires at least one first layout data and the inspection image from the storage unit, and displays the first layout data and the inspection image on the display unit in a superposed manner.

Abstract: A scanner system and method operable for high-resolution spatial scanning of an electromagnetic field radiated by an electronic device under test (DUT) are provided. The electromagnetic field level radiated by the DUT is measured with a probe array comprising a plurality of spatially separated switched probes, an analyzer, and a computer. An actuator changes the relative position of the probe array to the DUT by a distance less than or equal to the separation distance between the probes, and the electromagnetic field level is measured and stored again.

Abstract: The present invention provides a semiconductor wafer inspection apparatus and a semiconductor wafer inspection method that can suppress warpage in a semiconductor wafer due to a temperature difference between the mounting surface of a table and the semiconductor wafer. In a prober of the present invention, a semiconductor wafer is heated to have a second temperature which is equal to or lower than a first temperature in a preheating step using an oven, and then the semiconductor wafer is placed on a mounting surface of a table which is heated to the first temperature. Thus, because a temperature difference between the mounting surface of the table and the semiconductor wafer is reduced in the prober, it is possible to suppress warpage in the semiconductor wafer that occurs right after the semiconductor wafer is placed on the mounting surface.

Abstract: A resistance-voltage (R-V) transformation system used in dynamic strain measurement for a structure is provided. The system has single-channel (SC) circuit units each for producing a voltage corresponding to a resistance of a sensing element of a structural-strain sensing network. Each SC circuit unit has a R-V transformation module for converting the resistance into the voltage, a band-pass filter module for filtering the R-V transformation module output after a direct-current bias therein is removed, and a high-gain amplification module for amplifying the filter output. The band-pass filter module is configured such that an unwanted low-frequency component induced by resistance drift of the sensing element is removed while allowing a guided-wave signal component to pass through.

Abstract: An object of the present invention is to provide a polarized vinylidene fluoride/tetrafluoroethylene copolymer resin film that can significantly reduce, when used as an optical film, the deterioration of the quality of video or still images formed by display elements. The present invention provides a polarized vinylidene fluoride/tetrafluoroethylene copolymer resin film having 2,000 or fewer spot defects per m2, the number of spot defects being measured by a defect measurement method; the method using an surface inspection system in which a CCD camera is placed so as to detect defects at an angle of 45 degrees relative to an LED source, defects of the film are read within a rectangular range of 300 mm in a width direction (the direction perpendicular to the scanning direction), and 150 mm in a machine direction (the scanning direction), while the film is scanned under the camera at a rate of 20 m/min; wherein first, defects having a bright area of 1.5 mm2 or less and a dark area of 1.

Abstract: An electronic device includes a fingerprint module for at least receiving fingerprint information and a chemical analysis module for analyzing the fingerprint information for chemical features to derive distinguishing characteristics therefrom used for formulating at least one response. The distinguishing characteristics are identified by selecting a number of molecules and/or organic compounds from the fingerprint information analyzed for the chemical features. The distinguishing characteristics include at least age, gender, race, dietary information, and lifestyle information or a combination thereof.

Abstract: Generating image data of an object using a particle beam includes arranging at least one mark in the object or in a support material in which the object is embedded, determining a first examination region, exposing the first examination region by removing material of at least one of: the object and the support material, guiding a first particle beam over the first examination region, and acquiring image data of the first examination region using at least one detector by detecting interaction particles and/or interaction radiation due to an interaction of the first particle beam with the first examination region. Generating image data of an object using a particle beam may also include introducing the object into a support material in such a way that the object is partly or completely surrounded by the support material. A second examination region of the object may be determined relative to the mark.

Abstract: A method for operating a particle beam microscope includes: setting a potential of a particle source; setting a potential of an object; directing a particle beam onto the object; focusing the particle beam using a particle-optical lens; providing a dependence between a value of an excitation of the particle-optical lens and a value of the potential of the object; changing a manipulated variable with the aid of an actuating element actuatable by a user; and setting the excitation of the particle-optical lens in a manner dependent on the manipulated variable. In a first mode of operation, the potential of the object is set on the basis of the excitation of the particle-optical lens in accordance with the dependence between the value of the excitation of the particle-optical lens and the value of the potential of the object.

Abstract: A detection module that includes a readout circuit and detector having a group of sensing elements. The group is configured to detect multiple beams. The multiple beams resulted from an illumination of a substrate, by an illumination module, by multiple electron beams. The readout circuit is configured to: (a) receive selection information for selecting multiple selected sub-groups of sensing elements; wherein the group of sensing elements comprises, in addition to the multiple selected sub-groups of sensing elements, a plurality of non-selected sensing elements; (b) ignore detection signals provided from the plurality of non-selected sensing elements, and (c) generate, for each selected sub-group of sensing elements, a sensing result to provide multiple sensing results that correspond to the multiple beams; and wherein the selected sub-groups of sensing elements are selected in response to at least one working condition of the illumination module.

Abstract: The present disclosure provides an electron beam device (500) for inspecting a sample (10) with an electron beam, comprising an electron beam source comprising a cold field emitter (100) for emitting an electron beam, electron beam optics for directing and focusing the electron beam onto the sample (10), and a detector device (540) for detecting secondary charged particles generated by impingement of the electron beam on the sample (10).

Abstract: A system for scanning a plurality of regions of interest of a substrate using one or more charged particle beams, the system comprises: an irradiation module having charged particle optics; a stage for introducing a relative movement between the substrate and the charged particle optics; an imaging module for collecting electrons emanating from the substrate in response to a scanning of the regions of interest by the one or more charged particle beams; and wherein the charged particle optics is arranged to perform countermovements of the charged particle beam during the scanning of the regions of interest thereby countering relative movements introduced between the substrate and the charged particle optics during the scanning of the regions of interest.

Abstract: An electronic microscope includes a carrier, a first driving unit, a flow-buffer unit and an electron source. The carrier carries a sample. The first driving unit drives a first fluid to flow along a first flow path, wherein the first flow path passes through the sample. The flow-buffer unit is disposed on the first flow path to perform buffering on the first fluid, wherein the first fluid flows through the flow-buffer unit and the carrier in sequence. The electron source provides an electron beam to the sample.

Abstract: A system for imaging a sample through a protective pellicle is disclosed. The system includes an electron beam source configured to generate an electron beam and a sample stage configured to secure a sample and a pellicle, wherein the pellicle is disposed above the sample. The system also includes an electron-optical column including a set of electron-optical elements to direct at least a portion of the electron beam through the pellicle and onto a portion of the sample. In addition, the system includes a detector assembly positioned above the pellicle and configured to detect electrons emanating from the surface of the sample.

Abstract: Methods and systems for generating inspection results for a specimen with an adaptive nuisance filter are provided. One method includes selecting a portion of events detected during inspection of a specimen having values for at least one feature of the events that are closer to at least one value of at least one parameter of the nuisance filter than the values for at least one feature of another portion of the events. The method also includes acquiring output of an output acquisition subsystem for the sample of events, classifying the events in the sample based on the acquired output, and determining if one or more parameters of the nuisance filter should be modified based on results of the classifying. The nuisance filter or the modified nuisance filter can then be applied to results of the inspection of the specimen to generate final inspection results for the specimen.

Abstract: In the present invention, at the time of measuring, using a CD-SEM, a length of a resist that shrinks when irradiated with an electron beam, in order to highly accurately estimate a shape and dimensions of the resist before shrink, a shrink database with respect to various patterns is previously prepared, said shrink database containing cross-sectional shape data obtained prior to electron beam irradiation, a cross-sectional shape data group and a CD-SEM image data group, which are obtained under various electron beam irradiation conditions, and models based on such data and data groups, and a CD-SEM image of a resist pattern to be measured is obtained (S102), then, the CD-SEM image and data in the shrink database are compared with each other (S103), and the shape and dimensions of the pattern before the shrink are estimated and outputted (S104).

Abstract: Provided is a charged particle beam device capable of observing the interior and the surface of a sample in a simple manner. This charged particle beam device operates in a transmitted charged particle image mode and a secondary charged particle image mode. In the transmitted charged particle image mode, a transmitted charged particle image is produced on the basis of a detection signal (512) associated with light emitted from a light-emitting member (500) that emits light upon being irradiated with transmitted charged particles transmitted through the interior of a sample (6). In the secondary charged particle image mode, a secondary charged particle image is produced on the basis of a detection signal (518) caused by reflected charged particles or secondary charged particles (517) from the sample (6).

Abstract: Presented is a holder assembly for cooperating with a nanoreactor and an electron microscope. The holder assembly has a distal end for holding the nanoreactor. The volume has a fluid inlet and outlet. The holder assembly has fluid supply and outlet tubes which in working are connected to the fluid inlet and outlet of the nanoreactor. In working, the connection between the fluid inlet and outlet and the respective supply and outlet tubes are sealed by sealing elements. The holder assembly has a recess which, when the nanoreactor is attached and the holder is inserted into the evacuated portion of an electron microscope, forms a sealed pre-vacuum volume between the holder and the nanoreactor, with the pre-vacuum volume being evacuated via a pre-vacuum channel such that any fluid leakage is pumped away and does not enter the evacuated part of the electron microscope.

Abstract: An apparatus includes a static random-access memory and circuitry configured to initiate a corrective action associated with the static random-access memory. The corrective action may be initiated based on a number of static random-access memory cells that have a particular state responsive to a power-up of the static random-access memory.

Abstract: A system for scanning a plurality of regions of interest of a substrate using one or more charged particle beams, the system comprises: an irradiation module having charged particle optics; a stage for introducing a relative movement between the substrate and the charged particle optics; an imaging module for collecting electrons emanating from the substrate in response to a scanning of the regions of interest by the one or more charged particle beams; and wherein the charged particle optics is arranged to perform countermovements of the charged particle beam during the scanning of the regions of interest thereby countering relative movements introduced between the substrate and the charged particle optics during the scanning of the regions of interest.

Abstract: The invention relates to a photon detector (10), in particular an x-ray detector, in the form of a measurement finger, which extends along a detector axis (23) and has a detector head (11) at a first end of the measurement finger, wherein the detector head (11) comprises a plurality of at least two detector modules (22), each comprising a sensor chip (12) sensitive to photon radiation (14), in particular x-radiation, said sensor chip having an exposed end face (13) and a face facing away from the end face (13), wherein the detector modules (22) are arranged around the detector axis (23) in a plane (24) extending orthogonally to the detector axis (23).

Abstract: An X-ray detection signal processing device (10) and the like according to the present invention includes: a comparator (17) configured to output a High signal when a level of a signal from a continuous reset type preamplifier (13) having an CR circuit (13a) does not exceed a predetermined upper limit value, and output a Low signal when the level of the signal from the preamplifier (13) exceeds the predetermined upper limit value; and a control section (18) configured to delay shift of the signal of the comparator (17) from Low to High by a predetermined time, to perform output to a clock oscillator (15), stop oscillation by outputting a Low signal to the clock oscillator (15), and thus stop high-speed AD conversion by a high-speed AD converter (14) and maintain an output value.

Abstract: An object of the invention is to provide a charged particle beam apparatus capable of performing high-precision measurement even on a pattern in which a width of edges is narrow and inherent peaks of the edges cannot be easily detected.

Abstract: Disclosed are apparatus and methods for the generation of a stage speed profile and/or the selection of care areas for automated wafer inspection. The stage speed profile generated corresponds to a fastest speed the inspection machine is able to inspect provided a set of care areas. The set of care areas selected correspond to specific regions on the wafer which are to be imaged in detail by the inspection machine. The apparatus and methods herein may also calculate speed of inspection and coverage (and possibly other characteristics of the inspection) for a quantity of cases, and select the best trade-off of coverage versus inspection time using a cost function. Other aspects, features, and embodiments of the invention are also disclosed.

Abstract: The invention provides a microscope system including a correction-gain storage portion that calculates a correction gain for performing shading correction of an image related to optical images of a specimen, obtained by a microscope, and stores specimen information indicating features of the specimen and optical information at the time of obtaining the image in association with the correction gain; a correction-gain selecting portion that selects the correction gain for use when performing the shading correction of the image to be corrected; and a correction portion that performs the shading correction of the image to be corrected, on the basis of the selected correction gain, wherein the correction-gain selecting portion selects, on the basis of the specimen information or a result of the shading correction with the plurality of correction gains, the correction gain to be used in the shading correction of the image to be corrected.

Abstract: An apparatus for preparing a sample for microscopy is provided that has a milling device that removes material from a sample in order to thin the sample. An electron beam that is directed onto the sample is present along with a detector that detects when the electron beam has reached a preselected threshold transmitted through or immediately adjacent the sample. Once the detector detects the electron beam has reached this threshold, the milling device terminates the milling process.

Abstract: There is provided an electron microscope capable of easily achieving power saving. The electron microscope (100) includes a controller (60) for switching the mode of operation of the microscope from a first mode where electron lenses (12, 14, 18, 20) are activated to a second mode where the electron lenses (12, 14, 18, 20) are not activated. During this operation for making a switch from the first mode to the second mode, the controller (60) performs the steps of: closing a first vacuum gate valve (50), opening a second vacuum gate valve (52), and vacuum pumping the interior of the electron optical column (2) of the microscope by the second vacuum pumping unit (40); then controlling a heating section (26) to heat an adsorptive member (242); then opening the first vacuum gate valve (50), closing the second vacuum gate valve (52), and vacuum pumping the interior of the electron optical column (2) by the first vacuum pumping unit (30); and turning off the electron lenses (12, 14, 18, 20).

Abstract: Systems and methods are disclosed that describe a MEMS device and a method of sensing based on a consensus algorithm. The MEMS device is a sensor comprising multiple piezoelectric layers attached to a microcantilever. It can be used to sense deflections or variations in corresponding parameters of systems in micro- and nano-scales. Multiple piezoelectric elements on a microcantilever can provide a more accurate measurement of the microcantilever's deflection. The device can eliminate bulky laser sensors in SPMs and provide additional use as a biosensor, or chemical sensor at the micro- and nano-scale. The consensus sensing algorithm can provide added robustness into the system. If one of the sensing elements or electrodes fails during a sensing process, other elements can compensate and allow for near zero-error measurement.

Abstract: Provided is an electron microscope wherein a detector requiring the application of a voltage is used to obtain a micrograph from a sample placed in a gas atmosphere. The electron microscope is provided with a gas inlet device for emitting gas onto a sample, and a gas control device controlling the amount of gas emitted by the gas inlet device so that, during the gas emission by the gas inlet device, the degree of vacuum within the space where the detector (49-51, 55) is installed is continuously maintained to less than a set value.

Abstract: A point spread function (PSF) of a focused scanning particle beam of an observation instrument is ascertained by obtaining a first image (reference image) based on a reference instrument, the reference image being an image of an area of a reference standard, obtaining a second image (observed image) of the area of the reference standard, and the observed image obtained using the observation instrument configured with a set of operational parameters that define a probe size for the observation instrument, the probe size being larger than a pixel size of the reference image, and then determining, based on the reference image and the observed image, the PSF of the observation instrument as a component of a convolution of the reference image that provides the observed image.

Abstract: A radiation imaging system including an X-ray sensor with a plurality of sensor chips disposed next to each other and an image processing apparatus which performs abnormality determination concerning a white image obtained by irradiating the X-ray sensor with X-rays without any object disposed between the X-ray sensor and an X-ray generator, the system includes: an area acquisition unit configured to acquire information of partial areas of the white image which respectively correspond to the plurality of sensor chips; a distribution acquisition unit configured to acquire distribution information representing variation in pixel value for each of the acquired partial areas; and a determination unit configured to determine, based on the distribution information, whether abnormality is included in the white image.

Abstract: A multi-beam electron microscope for ECCI is provided. The electron microscope has a platform, on which a crystalline sample is placed. At least a first electron source and a second electron source of the electron microscope are mounted to a housing. The housing is tiltable with respect to a longitudinal direction through a pivot for forming a fulcrum, such that the first electron source and the second electron source are tilted simultaneously and are substantially equally distanced from the platform along a vertical axis when the housing is tilted. The electron microscope also has electron beam focusing assemblies for focusing the electron beams generated by the electron sources onto the crystalline sample to generate backscattered electrons. The electron microscope also has detectors for detecting the backscattered electrons.

Abstract: With an image processing device, a presence/absence of a product defect is judged based on detected-image data obtained by a radiographic device that detects radiation that has passed through a product, which is an inspection subject. With the image processing device, a position of a product feature in the detected-image data is identified based on a shape of the product feature indicated by feature data stored in a storage portion in advance, defect candidates are extracted with reference to the identified product feature in the detected-image data, and the presence/absence of a product defect is judged based on characteristic quantities of product defects indicated by a defect characteristic stored in the storage portion in advance and characteristic quantities of the defect candidates.

Abstract: A system for adaptive electron beam scanning may include an inspection sub-system configured to scan an electron beam across the surface of a sample. The inspection sub-system may include an electron beam source, a sample stage, a set of electron-optic elements, a detector assembly and a controller communicatively coupled to one or more portions of the inspection sub-system. The controller may assess one or more characteristics of one or more portions of an area of the sample for inspection and, responsive to the assessed one or more characteristics, adjust one or more scan parameters of the inspection sub-system.

Abstract: In accordance with an embodiment, an analytical apparatus includes a member, a voltage source connected to the member and a detecting section. The member has an inserting portion into which a sample holder supporting a sample is insertable and whose shape corresponds to a shape of the sample holder. The detecting section is configured to detect a substance to be emitted from the sample by field evaporation. The shape of the inserting portion in a cross section of a direction perpendicular to an inserting direction of the sample holder is a shape excluding a perfect circle.

Abstract: In general, in a multipole lens of an aberration corrector of a charged particle beam device, there is only one condition that can be set where both a spherical aberration correction condition and magnetic saturation are satisfied. Therefore, a plurality of acceleration voltages cannot be handled. Consequently, the present invention provides a spherical aberration corrector that satisfies the magnetic saturation state for a plurality of aberration correction conditions by selectively magnetizing a plurality of pole groups of the multipole lens according to the changes in the objective lens magnetization current.

Abstract: An apparatus for inspecting a sample, is equipped with a charged particle column for producing a focused beam of charged particles to observe or modify the sample, and an optical microscope to observe a region of interest on the sample as is observed by the charged particle beam or vice versa. The apparatus is accommodated with a processing unit adapted and equipped to represent an image as generated with the column and an image as generated with the microscope. The unit is further adapted to perform an alignment procedure mutually correlating a region of interest in one of the images, wherein the alignment procedure involves detecting a change in the optical image as caused by the charged particle beam.

Abstract: One embodiment relates to a method for automated review of defects detected in a defective die on the target substrate. The method includes: performing an automated review of the defects using an secondary electron microscope (SEM) so as to obtain electron-beam images of the defects; performing an automated classification of the defects into types based on morphology of the defects as determined from the electron-beam images; selecting defects of a specific type for automated energy-dispersive x-ray (EDX) review; and performing the automated EDX review on the defects of the specific type. In addition, automated techniques are disclosed for obtaining an accurate reference so as to improve the usefulness of the EDX results. Furthermore, an automated method of classifying the defects based on the EDX results is disclosed which provides a final pareto that combines both morphological and elemental information. Other embodiments, aspects and features are also disclosed.

Abstract: The invention relates to an apparatus for inspecting a surface of a sample, wherein the apparatus comprises: at least one charged particle source for generating an array of primary charged particle beams, a condenser lens for directing all charged particle beams to a common cross-over, a lens system for directing the primary charged particle beams from the common cross-over towards the sample surface and for focusing all primary charged particle beams into an array of individual spots on the sample surface, and a position sensitive secondary electron detector positioned at least substantially in or near a plane comprising said common cross-over.

Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means is on the upstream of the beamlet-limit means, and thereby generating less scattered electrons. The image-forming means not only forms the virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots.

Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means is on the upstream of the beamlet-limit means, and thereby generating less scattered electrons. The image-forming means not only forms the virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots.

Abstract: A method for exposing a wafer using a plurality of charged particle beamlets. The method comprises identifying non-functional beamlets among the beamlets, allocating a first subset of the beamlets for exposing a first portion of the wafer, the first subset excluding the identified non-functional beamlets, performing a first scan for exposing the first portion of the wafer using the first subset of the beamlets, allocating a second subset of the beamlets for exposing a second portion of the wafer, the second subset also excluding the identified non-functional beamlets, and performing a second scan for exposing the second portion of the wafer using the second subset of the beamlets, wherein the first and second portions of the wafer do not overlap and together comprise the complete area of the wafer to be exposed.

Abstract: The present invention provides a charged-particle radiation apparatus with a defect observation device for observing defects on a sample, the apparatus including a control unit and a display unit. The control unit is configured to execute a drift correction process on one or more images acquired with the defect observation device under a plurality of correction conditions, and display the plurality of correction conditions and a plurality of corrected images obtained through execution of the drift correction process in association with each other, as a first screen on the display unit.

Abstract: A sample processing evaluation apparatus includes a charged particle beam column that irradiates a sample with charged particle beam, a sample holder that holds both ends of the sample, and a sample stage on which the sample holder is placed, in which the sample holder is configured to rotate the sample about a rotation axis between the sample stage and the charged particle beam column.

Abstract: Disclosed is a micro-electron column including nanostructure tips each of which has a tubular, columnar, or blocky structure ranging in size from several nanometers to dozens of nanometers. In the micro-electron column, the nanostructure tips can easily emit electrons because a high electric field is generated at the end of the nanostructure tips when a voltage is applied to the nanostructure tips, and an induction electrode is disposed between the electron emitter and a source lens so as to help electrons emitted from the electron emitter to enter an aperture of a first lens electrode layer of the source lens, thereby realizing improved performance of the micro-electron column. In the micro-electron column, the size of the nanostructure tips may be larger than that of the aperture of a source lens.

Abstract: A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first re