Abstract: A method for operating a particle beam device and/or for analyzing an object in a particle beam device are provided. For example, the particle beam device is an electron beam device, an ion beam device, or a combination device having an electron beam device and an ion beam device. In various embodiments, the method steps of a so-called stereoscopy method and a multi-detector method may be combined with one another in such a manner that simple and rapid analysis of the object is made possible.

Abstract: A scanning charged particle beam device configured to image a specimen is described. The scanning charged particle beam device includes a source of charged particles, a condenser lens for influencing the charged particles, an aperture plate having at least two aperture openings to generate at least two primary beamlets of charged particles, at least two deflectors, wherein the at least two deflectors are multi-pole deflectors, a multi-pole deflector with an order of poles of 8 or higher, an objective lens, wherein the objective lens is a retarding field compound lens, a beam separator configured to separate the at least two primary beamlets from at least two signal beamlets, a beam bender, or a deflector or a mirror configured to deflect the at least two signal beamlets, wherein the beam bender is a hemispherical beam bender or beam bender having at least two curved electrodes, and at least two detector elements.

Abstract: A charged particle beam device (1) includes a charged particle optical lens barrel (10), a support housing (20) equipped with the charged particle optical lens barrel (10) thereon, and an insertion housing (30) inserted in the support housing (20). A first aperture member (15) is disposed in the vicinity of the center of the magnetic field of an objective lens, and a second aperture member (15) is disposed so as to externally close an opening part provided at the upper side of the insertion housing (30). Further, when a primary charged particle beam (12) is irradiated to a sample (60) arranged under the lower side of the second aperture member (31), secondary charged particles thus emitted are detected by a detector (16).

Abstract: To provide a low acceleration scanning electron microscope that can discriminate and detect reflected electrons and secondary electrons even with a low probe current, this scanning electron microscope is provided with an electron gun (29), an aperture (26), a sample table (3), an electron optical system (4-1) for making an electron beam (31) converge on a sample (2), a deflection means (10), a secondary electron detector (8), a reflected electron detector (9), and a cylindrical electron transport means (5) in a position between the electron gun (29) and sample (2). The reflected electron detector (9) is provided within the electron transport means (5) and on a side further away from the electron gun (29) than the secondary electron detector (8) and the deflection means (10). The reception surface (9-1) of the reflected electron detector (9) is electrically wired so as to have the same potential as the electron transport means (5).

Abstract: A detector (100) is used to detect a charged particle beam (EB), and includes a first light emission portion (10) for converting the charged particle beam into light, a second light emission portion (20) for converting the charged particle beam transmitted through the first light emission portion (10) into light, and a light detector (30) for detecting the light produced by the first light emission portion (10) and the light produced by the second light emission portion (20). The first light emission portion (10) is a powdered scintillator. The second light emission portion (20) is a single crystal scintillator.

Abstract: Method and apparatus for analysis and display of fine grained mineral samples. A portion of the sample is illuminated with a charged particle beam. Emitted radiation is detected, and a sample emission spectrum is generated and fit with a plurality of standard emission spectra of minerals in a candidate mineral composition. A mineral composition whose emission spectrum best fits the sample emission spectrum is selected from a plurality of candidate mineral compositions. An assigned color is received for each mineral in the selected mineral composition, and the assigned colors are blended according to the proportion of each mineral in the selected mineral composition. An image pixel corresponding to the portion of the sample is rendered for display.

Abstract: A composite charged particle beam apparatus comprises an FIB column and an SEM column arranged so that the ion and the electron beam irradition axes intersect with each other substantially at a right angle. A sample stage mounts a sample, and a detector detects secondary particles generated from the sample when irradiated with the ion beam or the electron beam. An observation image formation portion forms an FIB image and an SEM image based on a detection signal of the detector. An optical microscope observes the sample, and a display portion displays the FIB image, the SEM image and an optical microscope image. A stage control portion changes the coordinate system of the sample stage to any selected one of the coordinate systems of the FIB image, the SEM image and the optical microscope image.

Abstract: An electron microscope is provided. In another aspect, an electron microscope employs a radio frequency which acts upon electrons used to assist in imaging a specimen. Furthermore, another aspect provides an electron beam microscope with a time resolution of less than 1 picosecond with more than 105 electrons in a single shot or image group. Yet another aspect employs a super-cooled component in an electron microscope.

Abstract: A method of measuring an overlay offset using a scanning electron microscope system includes: scanning an in-cell region, which includes a lower structure and an upper structure stacked in a sample, using a primary electron beam with a landing energy of at least 10 kV; detecting electrons emitted from the scanned in-cell region; and measuring an overlay offset with respect to overlapping patterns included in the in-cell region using an image of the in-cell region that is generated based on the detected electrons emitted from the scanned in-cell region.

Abstract: A cross section processing method and a cross section processing apparatus are provided in which it is possible to form a flat cross section in a sample composed of a plurality of substances having different hardness by a focused ion beam. The etching of a processing area is performed while variably controlling the irradiation interval, the irradiation time, or the like of a focused ion beam based on cross section information of an SEM image obtained by the observation of a cross section. In this way, even if a sample is composed of a plurality of substances having different hardness, it is possible to form a flat observation surface with a uniform etching rate.

Abstract: The invention relates to a technique of improving a contrast of a lower-layer pattern in a multi layer by synthesizing detected signals from a plurality of detectors by using an appropriate allocation ratio in accordance with pattern arrangement. In a charged particle beam device capable of improving image quality by using detected images obtained from a plurality of detectors and in a method of improving the image quality, a method of generating one or more output images from detected images corresponding to respective outputs of the detectors that are arranged at different locations is controlled by using information of a pattern direction, an edge strength, or others calculated from a design data or the detected image.

Abstract: An apparatus for inspecting a sample, is equipped with a charged particle column for producing a focused beam of charged particles to observe or modify the sample, and an optical microscope to observe a region of interest on the sample as is observed by the charged particle beam or vice versa. The apparatus is accommodated with a processing unit adapted and equipped to represent an image as generated with the column and an image as generated with the microscope. The unit is further adapted to perform an alignment procedure mutually correlating a region of interest in one of the images, wherein the alignment procedure involves detecting a change in the optical image as caused by the charged particle beam.

Abstract: A sample observation method of the present invention comprises a step of defining, with respect to an electron microscope image, an outline of an observation object with respect to a sample (3), or a plurality of points located along the outline, and a step of arranging a plurality of fields of view for an electron microscope along the outline, wherein electron microscope images of the plurality of fields of view that have been defined and arranged along the shape of the observation object through each of the above-mentioned steps are acquired. It is thus made possible to provide a sample observation method that is capable of selectively acquiring, with respect to observation objects of various shapes, an electron microscope image based on a field of view definition that is in accordance with the shape of the observation object, as well as an electron microscope apparatus that realizes such a sample observation method.

Abstract: A control device (50) for a charged particle beam device (100) tilts the irradiation axis of a primary electron beam (4) to the left, straight, or to the right via tilting coils (11, 12) each time the primary electron beam (4) scans the surface of a sample (15) over a single scanning line. When the irradiation axis is changed, the focal point of the primary electron beam (4) is adjusted by a focal point-adjusting coil (14) based on the tilt of the irradiation axis in order to take a left-tilted observation image, a non-tilted observation image or a right-tilted observation image of the surface of a sample (15) for each scanning line. The left-tilted observation images, non-tilted observation images and right-tilted observation images for the scanning lines obtained up to this point are simultaneously displayed on the same display device (31). In this way, focused non-tilted observation images and focused tilted observation images can be taken and displayed nearly simultaneously.

Abstract: Provided is a charged particle beam device to improve energy solution of its energy filter. In one embodiment, a charged particle beam device includes a deflector to deflect charged particles emitted from a sample to an energy filter, and a change in brightness value with the change of voltage applied to the energy filter is found for each of a plurality of deflection conditions for the deflector, and a deflection condition such that a change in the brightness value satisfies a predetermined condition is set as the deflection condition for the deflector.

Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

Abstract: An embodiment is to provide a technique that continuously applies a certain amount of an electron beam to a sample by selecting a beam applied to the sample from an electron beam emitted from an electron source in a scanning electron microscope. A charged particle apparatus is configured, including: a mechanism that detects the distribution of electric current strength with respect to the emitting direction of an electron beam emitted from an electron source; a functionality that predicts a fluctuation of an electric current applied to a sample by predicting the distribution of the electric current based on the detected result; a functionality that determines a position at which a beam applied to the sample is acquired based on the predicted result; and a mechanism that controls a position at which a probe beam is acquired based on the determined result.

Abstract: A method of electron microcopy passes an electron beam through a phase plate, specifically a Zernike type phase plate, comprising a central hole, and a thin film causing a phase shift of the electrons passing through said film. This phase shift causes the Contrast Transfer Function (CTF) to change from a sine-like function to a cosine-like function. The phase plate is equipped with a film in the form of an annulus, carried by a much thinner film. As a result only in a small spatial frequency range (for low frequencies) the phase is changed (and thus the CTF), and for other spatial frequencies the phase shift is negligible, and thus the CTF remains unchanged. Due to the much smaller thickness of the carrier film the scattering of electrons is negligible as well.

Abstract: Provided is an electron microscope capable of enhancing a magnetic shield function even though the structure thereof has an objective tens that projects into a sample chamber space. The electron microscope includes: an objective lens (6) which focuses an electron beam to irradiate a sample (4) with; a sample chamber (5) which forms a sample space to contain the sample (4); a sample chamber magnetic shield (7) provided inside the sample chamber (5); and an objective lens magnetic shield (8) of a tubular shape which surrounds the periphery of the objective lens (6). A first and a second hole, which face to each other in a traveling direction of the electron beam, are provided in an upper plate (10) serving as an upper wall of the sample chamber (5) and in an upper shield (9) of the sample chamber magnetic shield (7). The objective lens (6) is held inside the first hole provided in the upper plate (10).

Abstract: Provided is a fusion measurement apparatus which increases or maximizes the reliability of a measurement. The fusion measurement apparatus includes an atomic microscope for measuring a surface of a substrate at an atomic level, an electron microscope for measuring the atomic microscope and the substrate, and at least one electrode which distorts the path of a secondary electron on the substrate covered by a cantilever of the atomic microscope so that the secondary electron proceeds to an electron detector of the electron microscope.

Abstract: An inspection apparatus includes: beam generation means for generating any of charged particles and electromagnetic waves as a beam; a primary optical system that guides the beam into an inspection object held in a working chamber and irradiates the inspection object with the beam; a secondary optical system that detects secondary charged particles occurring from the inspection object; and an image processing system that forms an image on the basis of the detected secondary charged particles. The primary optical system includes a photoelectron generator having a photoelectronic surface. The base material of the photoelectronic surface is made of material having a higher thermal conductivity than the thermal conductivity of quartz.

Abstract: In order that a displacement between patterns of different heights, formed on a sample in a plurality of different pattern-forming steps, can be measured at fixed throughput and with high accuracy, correspondence between parameters of lenses and beam deflector of an electron optical system and an angle of incidence of a beam upon the sample is recorded as data, then a correction value for the amount of displacement or edge positions is calculated, and a true amount of displacement is calculated from the correction value and an image under observation.

Abstract: Provided are a pattern measuring apparatus and a computer program which determine whether a gap formed in a sample (201) is a core gap (211) or a spacer gap (212). The secondary electron profile of the sample (201) is acquired, the feature quantities of the secondary electron profile at the positions of edges (303, 305) are detected, and based on the detected feature quantities, whether each gap adjacent to each of the edges (303, 305) is the core gap (211) or the spacer gap (212) is determined. Furthermore, the waveform profile of the spacer (207) is previously stored, the secondary electron profile of the sample (201) is acquired, a matching degree of the secondary electron profile and the stored waveform profile at the position of each spacer (207) is detected, and based on the detected matching degree, whether the each gap adjacent to each spacer (207) is the core gap (211) or the spacer gap (212) is determined.

Abstract: A specimen holder and method for controlling the same, which can mount and fasten a specimen to allow observation thereof by joining a body and a stand of the specimen holder together. The specimen holder includes: a body; a specimen mounting part formed at an end of the body for fixing a specimen; elasticity means located inside the body; and a stand detachably joined with the body. The stand includes: a base part; and a joining part protrudingly formed on the upper face of the base part and having a through hole to which at least a part of the specimen mounting part is inserted. The specimen mounting part includes: a first grip part located at an end portion of the specimen mounting part for fixing one side of the specimen; and a second grip part movably connected with the elasticity means for fixing the other side of the specimen.

Abstract: This invention provides a method for improving performance of a reflective type energy filter for a charged particle beam, which employs a beam-adjusting lens on an entrance side of a potential barrier of the energy filter to make the charged particle beam become a substantially parallel beam to be incident onto the potential barrier. The method makes the energy filter have both a fine energy-discrimination power over a large emission angle spread and a high uniformity of energy-discrimination powers over a large FOV. A LVSEM using this method in the energy filter can obviously improve image contrast. The invention also provides multiple energy-discrimination detection devices formed by using the advantages of the method.

Abstract: The present invention provides means and corresponding embodiments to control charge-up in an electron beam apparatus, which can eliminate the positive charges soon after being generated on the sample surface within a frame cycle of imaging scanning. The means are to let some or all of secondary electrons emitted from the sample surface return back to neutralize positive charges built up thereon so as to reach a charge balance within a limited time period. The embodiments use control electrodes to generate retarding fields to reflect some of secondary electrons with low kinetic energies back to the sample surface.

Abstract: The present invention provides means and corresponding embodiments to control charge-up in an electron beam apparatus, which can eliminate the positive charges soon after being generated on the sample surface within a frame cycle of imaging scanning. The means are to let some or all of secondary electrons emitted from the sample surface return back to neutralize positive charges built up thereon so as to reach a charge balance within a limited time period. The embodiments use control electrodes to generate retarding fields to reflect some of secondary electrons with low kinetic energies back to the sample surface.

Abstract: One embodiment relates to an electron beam apparatus for inspection and/or review. An electron source generates a primary electron beam, and an electron-optics system shapes and focuses said primary electron beam onto a sample held by a stage. A detection system detects signal-carrying electrons including secondary electrons and back-scattered electrons from said sample, and an image processing system processes data from said detection system. A host computer system that controls and coordinates operations of the electron-optics system, the detection system, and the image processing system. A graphical user interface shows a parameter space and provides for user selection and activation of operating parameters of the apparatus. Another embodiment relates to a method for detecting and/or reviewing defects using an electron beam apparatus. Other embodiments, aspects and features are also disclosed.

Abstract: A detector support for an electron microscope including a detector support ring and flexible elements, wherein a first end of each of the flexible elements is connected to the support ring, and wherein the detector support ring and the flexible elements are configured to support at least two detectors in a circumferential arrangement around an optical axis of the electron microscope such that an optical axis of each of the at least two detectors intersects the optical axis of the electron microscope and a target point of the at least two detectors is maintained relatively constant over a temperature change.

Abstract: The electric charged particle beam microscope includes an electric charged particle source; a condenser lens converging electric charged particles emitted from the electric charged particle source on a specimen; a deflector scanning the converged electric charged particles over the specimen; a control unit of the deflector; a specimen stage on which the specimen is mounted; a detector detecting the electric charged particles; a computer forming an image from a control signal from the deflector and an output signal from the detector; and a display part connected with the computer. The control unit of the deflector can change the scan rate of the electric charged particles. A first rate scan image is obtained at a first rate and a second rate scan image is obtained at a second rate slower than the first rate.

Abstract: Aiming for easily carrying out an energy discrimination or an angle discrimination of a secondary particle emitted from a sample or easily setting an optimal observation condition, a charged particle beam apparatus is provided with a charged particle source for emitting a charged particle beam, a lens for focusing the charged particle beam to a sample, a detector for detecting a secondary particle emitted from the sample, and an orbit simulator for calculating a position at which the secondary particle emitted from the sample arrives; and in this structure, the orbit simulator calculates an orbit of a secondary particle that satisfies a predetermined condition, and a sample image is formed by using a signal detected at a position where the secondary particle satisfying the predetermined condition arrives at the detector.

Abstract: An electron-detector comprises a scintillator plate 207, electron optics 204 for directing a plurality of electron beams 9 onto the scintillator plate so that the electron beams are incident onto the scintillator plate at locations of incidence disposed at a distance from each other, a light detector 237 comprising a plurality of light receiving areas 235 disposed at a distance from each other, and light optics for generating a first light-optical image of at least a portion of the scintillator plate at a region 243 where the light receiving areas of the light detector are disposed so that, by the imaging, each of the locations of incidence is associated with a light receiving area; and wherein the electron optics comprise an electron beam deflector 255 for displacing the locations of incidence of the electron beams on the scintillator plate in a direction orthogonal to a normal 249 of a surface 208 of the scintillator plate.

Abstract: The X-ray analyzer generates a spectrum of X-rays obtained from an area on a sample where the intensity of X-rays whose energy is not included in an already set-up ROI is high and then, from the generated spectrum, identifies a new element for which an ROI is not set up. Further, the X-ray analyzer sets an ROI corresponding to the identified element and then obtains element distribution. The X-ray analyzer repeats generation of an X-ray spectrum, identification of an element, setting of an ROI, and obtaining element distribution. This avoids unintended omission of setting of an ROI and hence permits as-much-as-possible coverage of the elements in the sample. Further, distribution of a trace element is allowed to be obtained rapidly.

Abstract: Intensity of near-ultraviolet light or visible light of 180 to 700 nm emitted from a solid sample, such as an organic semiconductor, irradiated with an electron beam is measured, while kinetic energy (accelerating energy) of the electron beam is changed in a range of 0 to 5 eV so as to obtain a spectrum. Peaks are detected from the spectrum, and the energy thereof is defined as unoccupied-states energy of the sample. The onset energy of the first peak represents electronic affinity energy (electron affinity) of the sample. Since the energy of the electron beam irradiated onto the sample is 5 eV or less, almost no damage is exerted on the sample even when the sample is an organic semiconductor.

Abstract: The present invention provides apparatuses to inspect small particles on the surface of a sample such as wafer and mask. The apparatuses provide both high detection efficiency and high throughput by forming Dark-field BSE images. The apparatuses can additionally inspect physical and electrical defects on the sample surface by form SE images and Bright-field BSE images simultaneously. The apparatuses can be designed to do single-beam or even multiple single-beam inspection for achieving a high throughput.

Abstract: A charged particle beam source device adapted for generating a charged particle beam is provided. The charged particle beam source device includes an emitter tip adapted for providing charged particles. Furthermore, an extractor electrode having an aperture opening is provided for extracting the charged particles from the emitter tip. An aperture angle of the charged particle beam is 2 degrees or below the aperture angle being defined by a width of the aperture opening and a distance between the emitter tip and the extractor electrode, wherein the distance between the emitter tip and the extractor electrode is a range from 0.1 mm to 2 mm.

Abstract: A specimen positioning device (100) is for use in or with a charged particle beam system having a specimen chamber (1) and has: a base (10) provided with a hole (12) in operative communication with the specimen chamber (1); a specimen holder (20) movably mounted in the hole (12) and having a first portion (22) and a second portion (24); and a first portion support portion (40) supporting the first portion (22) in the specimen chamber (1). The second portion (24) supports the first portion (22) via a resilient member (34).

Abstract: Provided is a charged particle beam apparatus or charged particle microscope capable of observing an observation target sample in an air atmosphere or a gas environment without making significant changes to the configuration of a conventional high vacuum charged particle microscope. In a charged particle beam apparatus configured such that a thin film (10) is used to separate a vacuum environment and an air atmosphere (or a gas environment), an attachment (121) capable of holding the thin film (10) and whose interior can be maintained at an air atmosphere or a gas environment is inserted into a vacuum chamber (7) of a high vacuum charged particle microscope. The attachment (121) is vacuum-sealed and fixed to a vacuum partition of the vacuum sample chamber. Image quality is further improved by replacing the atmosphere in the attachment with helium or a light-elemental gas that has a lower mass than atmospheric gases such as nitrogen or water vapor.

Abstract: A process for measuring strain is provided that includes placing a sample of a material into a TEM as a sample. The TEM is energized to create a small electron beam with an incident angle to the sample. Electrical signals are generated that control multiple beam deflection coils and image deflection coils of the TEM. The beam deflection control signals cause the angle of the incident beam to change in a cyclic time-dependent manner. A first diffraction pattern from the sample material that shows dynamical diffraction effects is observed and then one or more of the beam deflection coil control signals are adjusted to reduce the dynamical diffraction effects. One or more of the image deflection coil control signals are then adjusted to remove any motion of the diffraction pattern.

Abstract: For a novice user to easily recognize a difference between imaging results caused by a difference between observation conditions, a computer has an operation screen display observation target setting buttons for changing an observation condition for a specimen including a combination of parameter setting values of a charged particle beam apparatus. The processing unit has the operation screen display a radar chart including a characteristic, indicated by three or more incompatible items, of an observation condition for each of the observation target setting buttons. The radar chart indicates at least items of high resolution, emphasis on surface structure and emphasis on material difference.

Abstract: A charged particle radiation apparatus includes a control device that switches between a first charged particle beam and a second charged particle beam, the first charged particle beam being scanned to acquire an image and a waveform signal, the second charged particle beam being scanned over a sample before the scan of the first charged particle beam and used to charge the sample more than the first charged particle beam; wherein the control device is configured to acquire at least one of signal waveform data and image data about a pattern formed on the sample in accordance with a scan performed on the sample by the second charged particle beam, and to stop, when the acquired data has proved to be indicative of a predetermined state, the scan of the second charged particle beam.

Abstract: A method for measuring a film thickness of an SOI layer of an SOI wafer including at least an insulator layer and the SOI layer which is formed on the insulator layer and is formed of a silicon single crystal, wherein a surface of the SOI layer is irradiated with an electron beam, characteristic X-rays are detected from a side of the SOI layer surface irradiated with the electron beam, the characteristic X-rays being generated by exciting a specific element in the insulator layer with the electron beam that has passed through the SOI layer and has been attenuated in the SOI layer, and the film thickness of the SOI layer is calculated on the basis of an intensity of the detected characteristic X-rays.

Abstract: An interface, a scanning electron microscope and a method for observing an object that is positioned in a non-vacuum environment. The method includes: generating an electron beam in the vacuum environment; scanning a region of the object with the electron beam while the object is located below an object holder; wherein the scanning comprises allowing the electron beam to pass through an aperture of an aperture array, pass through an ultra thin membrane that seals the aperture, and pass through the object holder; wherein the ultra thin membrane withstands a pressure difference between the vacuum environment and the non-vacuum environment; and detecting particles generated in response to an interaction between the electron beam and the object.

Abstract: An inspection system includes: an automated optical inspection device detecting a defect of an inspection object by using a light; a scanning electron microscope device for inspecting the defect of the inspection object by using an electron beam and including a vacuum chamber; a stage positioned below and spaced from the scanning electron microscope device and supporting the inspection object; and a transferring device connected to the scanning electron microscope chamber and the automated optical inspection and transferring the scanning electron microscope device and the automated optical inspection device to positions over the stage. Air is in a gap between the chamber and the inspection object. Accordingly, an inspection object of a large size may be inspected for analysis without damage to the inspection object.

Abstract: A parallel radial mirror analyzer (PRMA) (700) for facilitating rotationally symmetric detection of charged particles caused by a charged beam incident on a specimen is disclosed. The PRMA comprises a zero-volt equipotential grid (728), and a plurality of electrodes (702, 704, 706, 708, 710, 712, 714, 716, 718, 720, 722) electrically configured to generate corresponding electrostatic fields for deflecting the charged particles in accordance with respective energy levels of the charged particles to exit through the grid (728) to form corresponding second-order focal points on a detector (206). The detector (206) is disposed external to the corresponding electrostatic fields. A related method is also disclosed.

Abstract: A charged particle detection device has an active portion for configured to produce a signal in response secondary charged particles emitted from a sample landing on the active portion. The active portion is shaped to accommodate an expected asymmetric pattern of the secondary charged particles at a detector. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: Systems and methods for conducting electron or scanning probe microscopy are provided herein. In a general embodiment, the systems and methods for conducting electron or scanning probe microscopy with an undersampled data set include: driving an electron beam or probe to scan across a sample and visit a subset of pixel locations of the sample that are randomly or pseudo-randomly designated; determining actual pixel locations on the sample that are visited by the electron beam or probe; and processing data collected by detectors from the visits of the electron beam or probe at the actual pixel locations and recovering a reconstructed image of the sample.

Abstract: A method for identifying, inspecting, and reviewing all hot spots on a specimen is disclosed by using at least one SORIL e-beam tool. A full die on a semiconductor wafer is scanned by using a first identification recipe to obtain a full die image of that die and then design layout data is aligned and compared with the full die image to identify hot spots on the full die. Threshold levels used to identify hot spots can be varied and depend on the background environments close thereto, materials of the specimens, defect types, and design layout data. A second recipe is used to selectively inspect locations of all hot spots to identify killers, and then killers can be reviewed with a third recipe.

Abstract: A method of inspecting defects of a sample on a movable table includes a first step for, on a basis of position information of the defects which is previously detected by an other inspection system, driving the table so that the defects come into a viewing field of an optical microscope having a focus which is adjusted, a second step for re-detecting the defects to obtain a first detection result, a third step for correcting the position information of defects on a basis of position information of the re-detected defects, and a fourth step for reviewing the defects whose position information is corrected to obtain a second detection result. At the second step, re-detecting is performed using reflection light or scattered light from the sample which passes an optical filter which includes a light shielding portion and a light transmitting portion.

Abstract: An apparatus of plural charged particle beams with multi-axis magnetic lens is provided to perform multi-functions of observing a specimen surface, such as high-throughput inspection and high-resolution review of interested features thereof and charge-up control for enhancing image contrast and image resolution. In the apparatus, two or more sub-columns are formed and each of the sub-columns performs one of the multi-functions. Basically the sub-columns take normal illumination to get high image resolutions, but one or more may take oblique illuminations to get high image contrasts.