Abstract: Aiming for easily carrying out an energy discrimination or an angle discrimination of a secondary particle emitted from a sample or easily setting an optimal observation condition, a charged particle beam apparatus is provided with a charged particle source for emitting a charged particle beam, a lens for focusing the charged particle beam to a sample, a detector for detecting a secondary particle emitted from the sample, and an orbit simulator for calculating a position at which the secondary particle emitted from the sample arrives; and in this structure, the orbit simulator calculates an orbit of a secondary particle that satisfies a predetermined condition, and a sample image is formed by using a signal detected at a position where the secondary particle satisfying the predetermined condition arrives at the detector.

Abstract: A sample introduction device (100) is adapted to introduce a sample (S) into the sample chamber (1) of a charged particle beam instrument. The device includes: a pre-evacuation chamber (2) for performing a pre-evacuation; a sample holder (10) having a sample holding portion (12) capable of holding the sample (S); a support portion (20) for supporting the sample holder (10); mechanical drives (30); and goniometer (50) for moving and rotating the support portion (20) such that the sample holding portion (12) moves from inside the pre-evacuation chamber (2) into the sample chamber (1). Partition valve (70) can be activated by the action of the goniometer.

Abstract: A transmissive lens in a charged particle beam column for detecting X-rays and light is provided. The final lens may include elements that are transmissive for X-rays for EDS imaging and analysis or elements that are transmissive for light for cathodoluminescent (CL) imaging and analysis. The final lens may be constructed and arranged to include elements that are transmissive for both X-rays and light for combined EDS and CL imaging and analysis.

Abstract: In order to realize a multiple assembled easily with high accuracy, a multipole having assembly accuracy within 10 micrometer and within several seconds of angle is achieved by fixing multipole elements by being guided by grooves provided on an inner side of a cylindrical housing to form the multipole.

Abstract: A charged particle detection system comprises plural detection elements and a multi-aperture plate in proximity of the detection elements. Charged particle beamlets can traverse the apertures of the multi-aperture plate to be incident on the detection elements. More than one multi-aperture plate can be provided to form a stack of multi-aperture plates in proximity of the detector. A suitable electric potential supplied to the multi-aperture plate can have an energy filtering property for the plural charged particle beamlets traversing the apertures of the plate.

Abstract: A method for identifying, inspecting, and reviewing all hot spots on a specimen is disclosed by using at least one SORIL e-beam tool. A full die on a semiconductor wafer is scanned by using a first identification recipe to obtain a full die image of that die and then design layout data is aligned and compared with the full die image to identify hot spots on the full die. Threshold levels used to identify hot spots can be varied and depend on the background environments close thereto, materials of the specimens, defect types, and design layout data. A second recipe is used to selectively inspect locations of all hot spots to identify killers, and then killers can be reviewed with a third recipe.

Abstract: The present invention provides various thin-film sensor type power measuring apparatuses which can be constructed in a simplified and compact structure so as to measure the power of high-frequency circuits or batteries. This power measuring apparatus includes: a magnetic film disposed in parallel to a primary conductor through which a load current flows; a power supply with input and output terminals for supplying an element current to the magnetic film; a bias magnetic field applying unit for applying a DC magnetic field in a direction that is parallel, perpendicular, or diagonal to the direction of magnetization of the magnetic film; and a detection unit for detecting the voltage between the ends of the magnetic film in the direction of the element current. The power measuring apparatus detects only the DC voltage component between the ends of the magnetic film in the direction of the element current.

Abstract: When a signal electron is detected by energy selection by combining and controlling retarding and boosting for observation of a deep hole, etc., the only way for focus adjustment is to use a change in magnetic field of an objective lens. However, since responsiveness of the change in magnetic field is poor, throughput reduces.

Abstract: A system for characterizing a bi-directional reflectance distribution function scattered light pattern of a portion of a sample is disclosed. The system can comprise a hemispherical member comprising an reflective inner surface; an entrance port operable to receive electromagnetic radiation from an electromagnetic radiation source; a first reflective optical element operable to receive at least a portion of the electromagnetic radiation and to direct the at least the portion of the electromagnetic radiation onto the portion of the sample to be characterized; a wide-angle lens operable receive the electromagnetic radiation that was specularly reflected and diffusely scattered from the portion of the sample onto the inner surface of the hemispherical member; and an imaging device operable to record intensity information imaged by the wide-angle lens to characterize the bi-directional reflectance distribution function scattered light pattern of the portion of the sample.

Abstract: In accordance with an embodiment, a marking apparatus includes a charged particle beam device and a marking unit. The charged particle beam device generates a charged particle beam, irradiates a sample including a laminated body with the charged particle beam, detects secondary charged particles generated from the sample, and acquires a sample image. The marking unit bores a hole reaching at least a second layer from a surface layer in the laminated body in a viewing field of the charged particle beam device.

Abstract: Various embodiments for classifying defects detected on a wafer are provided. One method includes acquiring an electron beam image generated by a defect review tool for a location of a defect detected on a wafer by a wafer inspection tool. The method also includes determining a classification of the defect based on at least the electron beam image and without input from a user. The method may also include feeding back the classification results to the wafer inspection tool and optimizing the parameters of the tool to maximize sensitivity to the defects of interest.

Abstract: A Correlative Light and Electron Microscope (CLEM) is equipped with a TEM column and a light microscope fitted between the pole shoes of the objective lens of the TEM. To enlarge the acceptance solid angle for enhanced sensitivity a truncated lens is used. It is noted that this does not imply that the lens shows astigmatism (it is not a cylindrical lens). Using the light microscope, a first image is made with the sample in a first direction. This image will show in one direction a higher (diffraction limited) resolution than in the direction perpendicular thereto, due to the different NA of the lens in the two directions. By rotating the sample and making a second image, a combined image can be formed showing a better resolution than either of the images in the direction where they show a low NA.

Abstract: A novel specimen holder for insertion in electron microscopes, wherein the novel specimen holder is designed to minimize electrical noise so that signal integrity can be maintained during in situ electron microscopy.

Abstract: A single column charged particle source with user selectable configurations operates in ion-mode for FIB operations or electron mode for SEM operations. Equipped with an x-ray detector, energy dispersive x-ray spectroscopy analysis is possible. A user can selectively configure the source to prepare a sample in the ion-mode or FIB mode then essentially flip a switch selecting electron-mode or SEM mode and analyze the sample using EDS or other types of analysis.

Abstract: An observation and analysis unit that magnifies an image of a sample and further accomplishes the evaluation and analysis thereof. The observation and analysis unit includes a light-microscopic device designed for the magnified imaging and optical evaluation of the sample and a sample analyzer that analyzes selected regions of the sample. The sample analyzer includes an electron source from which an electron beam can be directed to a region of the sample selected by use of the light-microscopic device. The sample analyzer further includes an X-ray detector designed to detect X-ray radiation generated by the interaction of the electron beam with the sample material. The unit further includes an actuation and evaluation unit that generates control commands for the light-microscopic device and the electron source and spectrally analyzes the X-ray radiation.

Abstract: The invention relates to a projection lens assembly for directing a beam toward a target. This assembly includes a lens support body (52) that spans a plane (P), and has a connection region (58) and a lateral edge (56). The lens support body is arranged for insertion into a frame (42) of a processing unit along an insertion direction (X) parallel with the plane (P). The projection lens assembly includes conduits (60-64) emanating from the connection region, and a conduit guiding body (70-81) for accommodating the conduits. The guiding body includes a first guiding portion (72) for guiding the conduits from the connection region, along the plane to a lateral region (B) beyond the lateral edge. The guiding body also includes a second guiding portion (78) for guiding the conduits from the lateral region (B) toward a tilted edge (79) of the conduit guiding body.

Abstract: The X-ray analyzer generates a spectrum of X-rays obtained from an area on a sample where the intensity of X-rays whose energy is not included in an already set-up ROI is high and then, from the generated spectrum, identifies a new element for which an ROI is not set up. Further, the X-ray analyzer sets an ROI corresponding to the identified element and then obtains element distribution. The X-ray analyzer repeats generation of an X-ray spectrum, identification of an element, setting of an ROI, and obtaining element distribution. This avoids unintended omission of setting of an ROI and hence permits as-much-as-possible coverage of the elements in the sample. Further, distribution of a trace element is allowed to be obtained rapidly.

Abstract: There is provided a defect inspection apparatus including: an electron scanning unit configured to scan a surface of a sample with an electron beam; a plurality of detectors arranged around an optical axis of the electron beam and configured to detect electrons emitted from the surface of the sample by scanning the electron beam; a signal processing unit configured to generate image data of the surface of the sample based on detection signals from the detectors; an analysis unit configured to detect a defect due to irregularities of the surface of the sample based on the image data; and a control unit configured to control a scanning speed of the electron beam depending on the type of the sample.

Abstract: Methods, apparatuses, and systems for slice and view processing of samples with dual beam systems. The slice and view processing includes exposing a vertical wall of a trench formed in a sample surface; capturing a first image of the wall by interrogating the wall with an interrogating beam while the wall is at a first orientation relative to the beam; capturing a second image of the wall by interrogating the wall with the beam while the wall is at a second orientation relative to the beam, wherein first distances in the first image between a reference point and surface points on the wall are different than second distances in the second image between the reference point and the surface points; determining elevations of the surface points using the first distances and the second distances; and fitting a curve to topography of the wall using the elevations.

Abstract: An image processing apparatus includes a receiving unit, a detecting unit, and a generating unit. The receiving unit receives two pieces of image data to be compared with each other. The detecting unit detects the difference between the two pieces of image data received by the receiving unit. If a drawing element in the image data where the difference is detected by the detecting unit is dense with modified parts to such an extent that it is estimated to be difficult to identify the content of modification in the display of the difference, the generating unit generates difference image data indicating the difference between the two pieces of image data for comparison by adding an auxiliary image to highlight the content of the detected difference.

Abstract: An inspection system comprises a beam generator module for deflecting spots across scan portions of a specimen. The system also includes detection channels for sensing light emanating from a specimen in response to an incident beam directed towards such specimen and generating a detected image for each scan portion. The system comprises a synchronization system comprising clock generator modules for generating timing signals for deflectors of the beam generator module to scan the spots across the scan portions at a specified frequency and each of the detection channels to generate the corresponding detected image at a specified sampling rate. The timing signals are generated based on a common system clock and cause the deflectors to scan the spots and the detection channels to generate a detected image at a synchronized timing so as to minimize jitter between the scan portions in the response image.

Abstract: A method of investigating a flux of output electrons emanating from a sample in a charged-particle microscope, which flux is produced in response to irradiation of the sample by a beam of input charged particles, the method comprising the following steps: Using a detector to intercept at least a portion of the flux so as to produce a set {Ij} of pixeled images Ij of at least part of the sample, whereby the cardinality of the set {Ij} is M>1. For each pixel p, in each image Ij, determining the accumulated signal strength Sij, thus producing an associated set of signal strengths {Sij}. Using the set {Sij} to calculate the following values: An average signal strength S per pixel position i; A variance ?2S in S per pixel position i. Using these values S and ?2S to at least one map of said part of the sample, selected from the group comprising: A first map, representing variation in energy of detected electrons as a function of position.

Abstract: Disclosed is a charged particle radiation device having a charged particle source which generates a charged particle as a probe, a charged particle optical system, a sample stage, a vacuum discharge system, an aperture which restricts a probe, a conductive film, and a charged particle detector, wherein the conductive film is provided at a position excluding the optical axis of the optical system between the sample stage and the aperture; and the distance between the sensing surface of the surface of the charged particle detector and the sample stage is larger than the distance between the sample stage and the conductive film, so that the surface of the conductive film and the sensing surface of the detector are inclined.

Abstract: Provided is a gas field ionization ion source capable of emitting heavy ions with high brightness which are suitable for processing a sample. The gas field ionization ion source according to the present invention includes a temperature controller individually controlling the temperature of the tip end of an emitter electrode (1) and the temperature of a gas injection port part (3) of a gas supply unit.

Abstract: A composite charged particle beam apparatus includes a FIB column for irradiating a thin sample with a FIB and a GIB column for irradiating the thin sample with a GIB. The thin sample is placed on a sample stage, and a tilt unit tilts the thin sample about a tilt axis of the sample stage, the tilt axis being orthogonal to the FIB irradiation axis and being located inside a plane formed by the FIB irradiation axis and the GIB irradiation axis. A tilt sample holder is mounted on the sample stage and fixes the thin sample such that a cross-sectional surface of the thin sample is tilted at a constant angle with respect to the GIB irradiation axis and the azimuth angle of the GIB column can be changed by rotation of the sample stage.

Abstract: The present invention provides apparatuses to inspect small particles on the surface of a sample such as wafer and mask. The apparatuses provide both high detection efficiency and high throughput by forming Dark-field BSE images. The apparatuses can additionally inspect physical and electrical defects on the sample surface by form SE images and Bright-field BSE images simultaneously. The apparatuses can be designed to do single-beam or even multiple single-beam inspection for achieving a high throughput.

Abstract: Methods, apparatuses, and systems for slice and view processing of samples with dual beam systems. The slice and view processing includes exposing a vertical wall of a trench formed in a sample surface; capturing a first image of the wall by interrogating the wall with an interrogating beam while the wall is at a first orientation relative to the beam; capturing a second image of the wall by interrogating the wall with the beam while the wall is at a second orientation relative to the beam, wherein first distances in the first image between a reference point and surface points on the wall are different than second distances in the second image between the reference point and the surface points; determining elevations of the surface points using the first distances and the second distances; and fitting a curve to topography of the wall using the elevations.

Abstract: It is an object of the present invention to provide a scanning electron microscope for discriminating an angle of an electron ejected from a sample without providing an opening for restricting the angle at outside of an axis. In order to achieve the object described above, there is proposed a scanning electron microscope which includes a deflector to deflect an irradiating position of an electron beam, and a control unit to control the deflector, and further includes a detector to detecting an electron provided by irradiating a sample with the electron beam, an opening configuring member arranged between the detector and the deflector and having an opening for passing the electron beam, and a secondary signal deflector to deflect an electron ejected from the sample, in which the secondary signal deflector is controlled to deflect the electron ejected from the sample toward an opening of passing the electron beam in accordance with a deflection control of the deflector.

Abstract: An electron beam apparatus includes at least one electron beam column. The at least one beam column includes an electron beam optical system to irradiate an electron beam on a surface of a sample, and a detection system to detect electrons generated from the electron beam. The electron beam optical system includes an object lens to focus the electron beam on a surface of the sample. The object lens includes an electrostatic lens having a first electrode to which a first voltage is applied, a second electrode that is grounded, a third electrode to which a second voltage is applied, and a fourth electrode that is grounded. The first through fourth electrodes sequentially arranged relative to the sample.

Abstract: In a heating apparatus for X-ray inspection which heats at least one surface of a sample (7) by convection to perform an X-ray inspection, a planar heater 1 formed of an X-ray transmitting material having an opening 1b for passing gas is provided at a window part 22 for making an X-ray observation of the sample. Thereby, a board can be subjected to convection heating uniformly without enlarging or complicating the apparatus.

Abstract: A charged particle radiation apparatus includes a control device that switches between a first charged particle beam and a second charged particle beam, the first charged particle beam being scanned to acquire an image and a waveform signal, the second charged particle beam being scanned over a sample before the scan of the first charged particle beam and used to charge the sample more than the first charged particle beam; wherein the control device is configured to acquire at least one of signal waveform data and image data about a pattern formed on the sample in accordance with a scan performed on the sample by the second charged particle beam, and to stop, when the acquired data has proved to be indicative of a predetermined state, the scan of the second charged particle beam.

Abstract: The present invention aims at providing a pattern dimension measuring device that realizes the measurement of a dimension of a pattern difficult to set up a measurement box, or between patterns away from each other with high precision. In order to achieve the above object, a pattern dimension measuring device is proposed which moves a field of view with reference to a first pattern formed on the specimen on the basis of predetermined first distance information, acquires a first image, executes template matching with the use of the first image and a matching template, and calculates a distance between a second pattern included in the first image and the first pattern on the basis of second distance information obtained by the template matching, and the first distance information.

Abstract: An image inspection apparatus is provided for inspecting an image output on a recording medium by scanning the output image. The image inspection apparatus includes an inspection reference image generator to obtain an output-target image print data, and to generate an inspection reference image using the output-target image print data, an inspection result acquisition unit to acquire a result of a defect determination based on a difference between the generated inspection reference image and the read image, a restriction-on-disclosure process unit to change, based on restriction-on-disclosure positional information, which indicates a restricted area in the read image that should be restricted when displayed, a value of a pixel in the restricted area, when a defect is detected in the read image, to generate a corrected image, and an information transmission unit to transmit the corrected image through a network.

Abstract: In a scanning electron microscope, if a failure is caused to occur in a SEM image by the influence of a disturbance such as magnetic field or vibration inside and from outside the device, the cause is identified simply and accurately using this SEM image. There is provided a measurement technique whose measurement accuracy is not influenced by a roughness of SEM image pattern. A one-dimensional scanning is performed in a scanning-line direction (X direction) by setting the Y-direction scanning gain at zero at the time of acquiring the SEM image, and a two-dimensional image is created by arranging image information, which is obtained by the scanning, in a time-series manner in the Y direction. A shift-amount data on the two-dimensional image is acquired using a correlation function, and the magnetic field or vibration included within the SEM image is measured by a frequency analysis of the data.

Abstract: Disclosed is a scanning electron microscope provided with a calculation device (403) for measuring the dimension of a pattern on a sample (413), characterized in that the amount of change of a pattern shape, caused by electron beam irradiation, is calculated and stored, and a pattern shape contour (614; 815; 1512) before the sample is irradiated with an electron beam is restored from a pattern shape contour (613; 814; 1511) in a scanning electron microscope image (612; 813; 1510) after the sample is irradiated with an electron beam using the calculated amount and, then, the pattern shape contour (614; 815; 1512) is displayed. Thus, the shrinking of a resist and/or the effect of electrostatic charge caused when a sample is irradiated with an electron beam are eliminated, so that the shape contour of a two-dimensional pattern before irradiating an electron beam can be restored with a high degree of accuracy, and the dimension of a pattern can be measured with a high degree of accuracy, using the restored image.

Abstract: The invention relates to a charged particle optical system comprising a beamlet generator for generating a plurality of charged particle beamlets, an electrostatic deflection system for deflecting the beamlets, and a projection lens system for directing the beamlets from the beamlet generator towards the target. The electrostatic deflection system comprises a first electrostatic deflector and a second electrostatic deflector for scanning charged particle beamlets over the target. The second electrostatic deflector is located behind the first electrostatic deflector so that, during operation of the system, a beamlet generated by the beamlet generator passes both of the electrostatic deflectors. During operation of the first and second electrostatic deflectors the system is adapted to apply voltages on the first electrostatic deflector and the second electrostatic deflector of opposite sign.

Abstract: Provided is a charged particle beam apparatus or charged particle microscope capable of observing an observation target sample in an air atmosphere or a gas environment without making significant changes to the configuration of a conventional high vacuum charged particle microscope. In a charged particle beam apparatus configured such that a thin film (10) is used to separate a vacuum environment and an air atmosphere (or a gas environment), an attachment (121) capable of holding the thin film (10) and whose interior can be maintained at an air atmosphere or a gas environment is inserted into a vacuum chamber (7) of a high vacuum charged particle microscope. The attachment (121) is vacuum-sealed and fixed to a vacuum partition of the vacuum sample chamber. Image quality is further improved by replacing the atmosphere in the attachment with helium or a light-elemental gas that has a lower mass than atmospheric gases such as nitrogen or water vapor.

Abstract: A scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) apparatus that includes a scanning electron microscope, an x-ray detector, and an auxiliary acceleration voltage source. The scanning electron microscope includes a sample holder, and a layered electron beam column arranged to output an electron beam towards the sample holder at an initial beam energy. The auxiliary acceleration voltage source is to apply an auxiliary acceleration voltage between the sample holder and the layered electron beam column to accelerate the electron beam to a final beam energy. At the final beam energy, the electron beam is capable of generating x-rays at multiple wavelengths from a larger range of atomic species than the electron beam at the initial beam energy.

Abstract: It is an object to balance suppression of a leakage magnetic field and driving performance. In a linear motor including a stator including a first yoke having an open face and two rows of permanent magnets linearly arrayed inside the first yoke so that S-poles and N-poles are alternate and a movable element arranged between the two rows of permanent magnets and linearly moving, a second yoke is connected to an open end of the first yoke so as to cover the open end of the first yoke and the permanent magnets when viewed from the open face of the first yoke.

Abstract: The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.

Abstract: An electron beam device including an electron source which generates an electron beam; three lenses for controlling the characteristics of the electron beam, including a first lens, second lens and third lens arranged in sequence from the upstream side in relation to the emission direction of the electron beam; and a beam definition aperture arranged on the second lens. The position of the second lens is adjusted such that the total lens magnification ratio obtained under maximum beam current substantially matches the ideal lens magnification ratio defined on the basis of electro-optical characteristics.

Abstract: The invention relates to a dual beam apparatus equipped with an ion beam column and an electron beam column having an electrostatic immersion lens. When tilting the sample, the electrostatic immersion field is distorted and the symmetry round the electron optical axis is lost. As a consequence tilting introduces detrimental effects such as traverse chromatic aberration and beam displacement. Also in-column detectors, detecting either secondary electrons or backscattered electrons in the non-tilted position of the sample, will, due to the loss of the symmetry of the immersion field, show a mix of these electrons when tilting the sample. The invention shows how, by biasing the stage with respect to the grounded electrodes closest to the sample, these disadvantages are eliminated, or at least reduced.

Abstract: In order to provide a charged-particle radiation apparatus capable of evaluating and distinguishing the analysis position in a sample subjected to X-ray analysis in the stage before performing X-ray elemental analysis, and also making it possible for an analyst to perform, in a short period of time and without reworking, analysis for which high reliability is ensured, the present invention provides a charged-particle radiation apparatus provided with an X-ray detector, wherein a first back scattered electron detector (15) on the same axis as the X-ray detection surface of the X-ray detector (12 (25-30)) is disposed integrally with or independently from the X-ray detector (12), an X-ray signal being detected by the X-ray detector (12) simultaneously with or separately from detection of a back scattered electron signal by the first back scattered electron detector (15).

Abstract: One embodiment relates to an apparatus for high-resolution electron beam imaging. The apparatus includes an energy filter configured to limit an energy spread of the electrons in the incident electron beam. The energy filter may be formed using a stigmatic Wien filter and a filter aperture. Another embodiment relates to a method of forming an incident electron beam for a high-resolution electron beam apparatus. Another embodiment relates to a stigmatic Wien filter that includes curved conductive electrodes. Another embodiment relates to a stigmatic Wien filter that includes a pair of magnetic yokes and a multipole deflector. Other embodiments, aspects and features are also disclosed.

Abstract: The present invention has for its object to provide an electron beam irradiation apparatus which can suppress influences the electric fields generated by a plurality of backscattered electron detectors have. To attain the above object, an electron beam irradiation apparatus equipped with a scanning deflector comprises a plurality of backscattered electron detectors, a power source for detectors which applies voltages to the plural backscattered electron detectors, respectively, and a controller device which adjusts application voltages the power source for detectors delivers, on the basis of an image shift when the voltages are applied to the plural backscattered electron detectors.

Abstract: The present invention provides a dual-beam apparatus which employs the dark-field e-beam inspection method to inspect small particles on a surface of a sample such as wafer and mask with high throughput. The dual beam apparatus comprises two single-beam dark-field units placed in a same vacuum chamber and in two different orientations. The two single-beam dark-field units can perform the particle inspection separately or almost simultaneously by means of the alternately-scanning way. The invention also proposes a triple-beam apparatus for both inspecting and reviewing particles on a sample surface within the same vacuum chamber. The triple-beam apparatus comprises one foregoing dual-beam apparatus performing the particle inspection and one high-resolution SEM performing the particle review.

Abstract: A method of testing for photomask print errors includes dividing a photomask print into sub-regions and inspecting each sub-region with a different (e.g., electron) beam column, each sub-region aligned with a beam column axis during a calibration process. The different sub-regions may be inspected on different photomask prints on a wafer plane.

Abstract: Conventionally, in a general-purpose scanning electron microscope, the maximum accelerating voltage which can be set is low, and hence thin crystal samples which can be observed under normal high-resolution observation conditions are limited to samples with large lattice spacing. For this reason, there has no means for accurately performing magnification calibration. As means for solving this problem, the present invention includes an electron source which generates an electron beam, a deflector which deflects the electron beam so as to scan a sample with the electron beam, an objective lens which focuses the electron beam on the sample, a detector which detects an elastically scattered electron and an inelastically scattered electron which are transmitted through the sample, and an aperture disposed between the sample and the detector to control detection angles of the elastically scattered electron and the inelastically scattered electron.

Abstract: A focused ion beam system is offered which can make a focal adjustment without relying on the structure of a sample while suppressing damage to the sample to a minimum. Also, a method of making this focal adjustment is offered. The focused ion beam system has an ion source for producing an ion beam, a lens system for focusing the beam onto the sample, a detector for detecting secondary electrons emanating from the sample, and a controller for controlling the lens system. The controller is operative to provide control such that the sample is irradiated with the ion beam without scanning the beam and that a focus of the ion beam is varied by varying the intensity of the objective lens during the ion beam irradiation. Also, the controller measures the intensity of a signal indicating secondary electrons emanating from the sample while the intensity of the objective lens is being varied.

Abstract: When a signal electron is detected by energy selection by combining and controlling retarding and boosting for observation of a deep hole, etc., the only way for focus adjustment is to use a change in magnetic field of an objective lens. However, since responsiveness of the change in magnetic field is poor, throughput reduces.