Abstract: A method for evaluating a feature. The method includes receiving an image of the feature and determining respective coordinates of a plurality of points on an edge of the feature in the image. A figure having a non-circular and non-linear shape is fitted to the plurality of points, and respective distances between the plurality of points and the figure are determined. A roughness parameter for the feature is computed using the respective distances. The method may be applied in the analysis of critical dimensions (CD) of integrated circuits and, particularly, in the measurement of the edge roughness of their features and components as imaged using electron scanning microscopy (SEM).

Abstract: In a transmission electron microscope detector system, image data is read out from the pixels and analyzed during an image acquisition period. The image acquisition process is modified depending on the results of the analysis. For example, the analyses may indicate the inclusion in the data of an image artifact, such as charging or bubbling, and data including the artifact may be eliminated form the final image. CMOS detectors provide for selective read out of pixels at high data rates, allowing for real-time adaptive imaging.

Abstract: An electron microscope including a vacuum chamber for containing a specimen to be analyzed, an optics column, including an electron source and a final probe forming lens, for focusing electrons emitted from the electron source, a specimen stage positioned in the vacuum chamber under the probe forming lens for holding the specimen, and an x-ray detector positioned within the vacuum chamber. The x-ray detector includes an x-ray sensitive solid-state sensor and a mechanical support system for supporting and positioning the detector, including the sensor, within the vacuum chamber. The entirety of the mechanical support system is contained within the vacuum chamber. Multiple detectors of different types may be supported within the vacuum chamber on the mechanical support system. The mechanical support system may also include at least one thermoelectric cooler element for thermo-electrically cooling the x-ray sensors.

Abstract: In a method and apparatus for removing artifacts from an image generated a charged partial beam scanning device, a scanning method is determined, and the frequency of an artifact appearing on an image can then be determined, based on scanning method. A step 703, a frequency domain for removing an artifact can be determined from the vertical and horizontal widths determined by experimentation in advance with respect to the frequency position Photography is performed to obtain an image, which is Fourier transformed and the determined frequency domain is replaced, for example, by “0.” The resulting image is subjected to inverse Fourier transformation, and displayed and stored. The flow of such processing enables decreasing an artifact appearing on an image, depending on a scanning method.

Abstract: A detector system for a transmission electron microscope includes a first detector for recording a pattern and a second detector for recording a position of a feature of the pattern. The second detector is preferably a position sensitive detector that provides accurate, rapid position information that can be used as feedback to stabilize the position of the pattern on the first detector. In one embodiment, the first detector detects an electron energy loss electron spectrum, and the second detector, positioned behind the first detector and detecting electrons that pass through the first detector, detects the position of the zero-loss peak and adjusts the electron path to stabilize the position of the spectrum on the first detector.

Abstract: An interface, a scanning electron microscope and a method for observing an object that is positioned in a non-vacuum environment. The method includes: generating an electron beam in the vacuum environment; scanning a region of the object with the electron beam while the object is located below an object holder; wherein the scanning comprises allowing the electron beam to pass through an aperture of an aperture array, pass through an ultra thin membrane that seals the aperture, and pass through the object holder; wherein the ultra thin membrane withstands a pressure difference between the vacuum environment and the non-vacuum environment; and detecting particles generated in response to an interaction between the electron beam and the object.

Abstract: One embodiment relates to an apparatus for forming an electron image using electrons with a narrow range of electron energies from an electron beam with a wide range of energies. An electron beam source is configured to generate an electron beam, and condenser lenses collimate the beam into an objective lens configured to illuminate the specimen. The illuminating electrons are scattered by the specimen and form an electron beam with a range of energies that enter a magnetic prism separator. After a 90 degree deflection, the prism separator introduces an angular dispersion that disperses the incoming electron beam according to its energy. A knife-edge plate removes either the high or low energy tail from the propagating beam. An electron lens is configured to focus the electron beam into an electron mirror so that after the reflection, the other energy tail is stopped on the same knife-edge plate.

Abstract: In a multi-charged-particle-beam apparatus, when an electric field and voltage on a surface of a specimen are varied according to characteristics of the specimen, a layout of plural primary beams on the surface of the specimen and a layout of plural secondary beams on each detector vary. Then, calibration is executed to adjust the primary beams on the surface of the specimen to an ideal layout corresponding to the variation of operating conditions including inspecting conditions such as an electric field on the surface and voltage applied to the specimen. The layout of the primary beams on the surface of the specimen is acquired as images displayed on a display of reference marks on the stage. Variance with an ideal state of the reference marks is measured based upon these images and is corrected by the adjustment of a primary electron optics system and others.

Abstract: A pattern measurement apparatus includes a beam intensity distribution creation unit to scan a charged particle beam over a reference pattern having edge portions formed at a right angle to create a line profile of the reference pattern and thus create a reference-beam intensity distribution, an edge width detection unit to determine line profiles for pattern models including edges formed at various inclination angles by use of the reference-beam intensity distribution and calculate edge widths reflecting an influence of a width of a reference beam, and a correspondence table creation unit to calculate correction values for edge positions from the calculated edge widths and the pattern models and create a correspondence table in which the edge widths and the correction values are associated with one another.

Abstract: A phase contrast electron microscope has an objective with a back focal plane, a first diffraction lens, which images the back focal plane of the objective magnified into a diffraction intermediate image plane, a second diffraction lens whose principal plane is mounted in the proximity of the diffraction intermediate image plane and a phase-shifting element which is mounted in or in the proximity of the diffraction intermediate image plane. Also, a phase contrast electron microscope has an objective having a back focal plane, a first diffraction lens, a first phase-shifting element and a second phase-shifting element which is mounted in or in the proximity of the diffraction intermediate image plane. The first diffraction lens images the back focal plane of the objective magnified into a diffraction intermediate image plane and the first phase-shifting element is mounted in the back focal plane of the objective.

Abstract: In a conventional micro-channel plate (MCP), a secondary electron (SE) detector or a semi-conductor detector the number of the electrons is amplified through its own structure. For such amplification a small voltage difference is applied externally or generated due to its own structure and material. The electric current of electrons undergoing the above-described procedure is amplified by an external amplification circuit. In the present invention electrons—resulting from the collision of the electron beam generated by a microcolumn—are detected by surrounding conductive wiring. The detected electrons are amplified using an amplification circuit on the outside similar to a conventional detection method.

Abstract: A transmission electron microscope includes an electron beam source to generate an electron beam. Beam optics are provided to converge the electron beam. An aberration corrector corrects the electron beam for at least a spherical aberration. A specimen holder is provided to hold a specimen in the path of the electron beam. A detector is used to detect the electron beam transmitted through the specimen. The transmission electron microscope operates in a dark-field mode in which a zero beam of the electron beam is not detected. The microscope may also be capable of operating in an incoherent illumination mode.

Abstract: An apparatus for measuring a semiconductor device is provided. The apparatus includes a beam emitter configured to irradiate an electron beam onto a sample having the entire region composed of a critical dimension (CD) region, which is formed by etching or development, and a normal region connected to the CD region, and an analyzer electrically connected to the beam emitter, and configured to select and set a wavelength range of a region in which a difference in reflectance between the CD region and the normal region occurs, after obtaining reflectance from the electron beam reflected by a surface of the sample according to the wavelength of the electron beam. A method of measuring a semiconductor device using the measuring apparatus is also provided.

Abstract: A charged particle beam apparatus can be constructed with a smaller size (resulting in a small installation space) and a lower cost, suppress vibration, operate at higher speed, and be reliable in inspection. The charged particle beam apparatus is largely effective when a wafer having a large diameter is used. The charged particle beam apparatus includes: a plurality of inspection mechanisms, each of which is mounted on a vacuum chamber and has a charged particle beam mechanism for performing at least an inspection on the sample; a single-shaft transfer mechanism that moves the sample between the inspection mechanisms in the direction of an axis of the single-shaft transfer mechanism; and a rotary stage that mounts the sample thereon and has a rotational axis on the single-shaft transfer mechanism. The single-shaft transfer mechanism moves the sample between the inspection mechanisms in order that the sample is placed under any of the inspection mechanisms.

Abstract: An electromagnetic compound objective lens is provided for charged particle device, especially as an objective lens of low-voltage scanning electron microscope (LVSEM), which comprises a magnetic immersion lens and an electrostatic immersion lens. The magnetic immersion lens orients its gap between an inner pole piece and an outer pole piece to specimen's surface, and uses a magnetic specimen stage. The electrostatic immersion lens comprises three or four electrodes which apply suitable retarding field to a primary beam of the charged particle device for reducing its landing energy on specimen surface and further eliminating imaging aberrations.

Abstract: A method and system for the imaging and localization of fluorescent markers such as fluorescent proteins or quantum dots within biological samples is disclosed. The use of recombinant genetics technology to insert “reporter” genes into many species is well established. In particular, green fluorescent proteins (GFPs) and their genetically-modified variants ranging from blue to yellow, are easily spliced into many genomes at the sites of genes of interest (GoIs), where the GFPs are expressed with no apparent effect on the functioning of the proteins of interest (PoIs) coded for by the GoIs. One goal of biologists is more precise localization of PoIs within cells. The invention is a method and system for enabling more rapid and precise PoI localization using charged particle beam-induced damage to GFPs. Multiple embodiments of systems for implementing the method are presented, along with an image processing method relatively immune to high statistical noise levels.

Abstract: A crystal material lattice strain evaluation method includes illuminating a sample having a crystal structure with an electron beam in a zone axis direction, and selectively detecting a certain diffracted wave diffracted in a certain direction among a plurality of diffracted waves diffracted by the sample. The method further includes repeating the illuminating step and the selectively detecting step while scanning the sample, and obtaining a strain distribution image in a direction corresponding to the certain diffracted wave from diffraction intensity at each point of the sample.

Abstract: Example embodiments are directed to a scanning electron microscope. The scanning electron microscope includes an electron gun to configured irradiate an electron beam on a sample, and a disc of a transparent material and including a through-hole through which the electron beam passes. The disc includes a scintillator layer formed at a surface thereof so as to generate photons based on the secondary electrons received from the sample. A reflecting layer is formed at an inner peripheral surface of the through-hole so as to reflect the photons, thereby preventing leakage of the photons via the through-hole.

Abstract: Techniques, apparatus and systems for image decoding are described. A method performed by an image decoding apparatus includes generating motion compensation information and a quantized result of an error image that represents a difference between a current image to be decoded and a prediction image obtained by performing inter prediction on the current image from a bitstream of the current image. A reference image of the current image is received from an external memory unit based on the generated motion compensation information. The method includes restoring the current image based on the received reference image of the current image and the generated quantized result of the error image representing the difference between the current image and the prediction image. Receiving the reference image of the current image is performed while restoring a previous image, and restoring the current image is performed while receiving a reference image of a subsequent image.

Abstract: An object of the present invention is to provide a suitable method of observing a wafer edge by using an electron microscope. The electron microscope includes a column which can take an image in being tilted, and thus allows a wafer edge to be observed from an oblique direction.

Abstract: When a sample is cut to update an observed section, an electron beam is focused on the observed section. An apparatus of the invention includes an ion gun 102 which irradiates an ion beam onto a sample 200 to form an observed section 202, an electron gun 104 which irradiates an electron beam EB onto the observed section 202 formed by the ion gun 102, a focal point adjusting unit 106 which adjusts a relationship between the observed section 202 and a focal point of the electron beam EB, and a focal point control unit 108 which controls the focal point adjusting unit 106 on the basis of an amount of cut of the sample 200 obtained by irradiation of the ion beam IB obtained by the ion gun 102.

Abstract: Disclosed is a device capable of probing with minimal effect from electron beams. Rough probing is made possible using a lower magnification than the magnification usually viewed. When target contact of semiconductor is detected, measurement position is set in the center of picture usually to move probe without moving stage. With the miniaturization, contact can be confirmed only at high magnification, although probe can be confirmed at low magnification on the contrary but it is necessary to display it in real time. Static image obtained at high magnification once is combined with image obtained at low magnification in real time from target contact required for probing and characteristic of probe to be displayed, so that probing at low magnification can be realized to reduce the effects of electron beams and obtain accurate electrical characteristics.

Abstract: The present invention achieves the process of easily registering a template which is prepared for a size change in pattern matching for specifying a measurement point, and high-speed pattern matching by which adequate position accuracy can be obtained in measurement. The present invention includes means for automatically calculating the size and position of a positioning template different from a measurement point itself when the measurement point is designated, to display a template having the calculated size and position. The present invention further includes means for performing pattern matching by using all or some of a plurality of divided templates and extracting templates having a similar positional relationship to the original positional relationship.

Abstract: In a defect inspection apparatus which combines a plurality of probes for measuring electric properties of a specimen including a fine circuit line pattern with a charged particle beam apparatus, the charged particle beam apparatus reduces a degradation in resolution even with an image-shift of ±75 ?m or more. The defect inspection apparatus has a CAD navigation function associated with an image-shift function. The CAD navigation function uses coordinates for converting an image-shift moving amount to a DUT stage moving amount in communications between an image processing unit for processing charged particle beam images and a memory for storing information on circuit line patterns. The defect inspection provides the user with significantly improved usability.

Abstract: A charged particle beam system wherein the output of the secondary electron detector is detected while the retarding voltage is varied between the values for which the secondary electrons do not reach the sample and the values for which the secondary electrons reach the sample, and the surface potential of the sample is determined on the basis of the relationship between the retarding voltage and the detected output of the secondary electron detector.

Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

Abstract: A micro cross-section processing method includes the steps of determining a linear cross-section estimated position including an observation object on a surface of the sample, irradiating the focused ion beam to the cross-section estimated position perpendicularly to or at a tilt angle to form a cross-section at a position in front of the cross-section estimated position, irradiating the focused ion beam to both ends of the cross-section to form side cuts extending to a position in rear of the cross-section estimated position, irradiating the focused ion beam to a position on the surface of the cross-section and at a position deeper than the observation object to form a bottom cut extending to a position in rear of the cross-section estimated position, irradiating the focused ion beam along from the side cuts to the cross-section estimated position to form wedges connecting to the bottom cut, and applying impact to a region in front of the cross-section estimated position of the sample to cleave the vicinity

Abstract: The invention relates to a method for determining a reconstructed image using a particle-optical apparatus. The particle-optical apparatus comprises a particle source for producing a beam of particles, an object plane on which an object to be imaged may be placed, a condenser system for illuminating the object plane with the beam of particles, a projection system for forming an image of the object plane by imaging particles transmitted through the object on an image plane, and a detector for detecting the image, the detector comprising a semiconductor sensor having an array of pixels for providing a plurality of pixel signals from respective pixels of the array in response to particles incident on the detector.

Abstract: A method for examining a sample with a scanning charged particle beam imaging apparatus. First, an image area and a scan area are specified on a surface of the sample. Herein, the image area is entirely overlapped within the scan area. Next, the scan area is scanned by using a charged particle beam along a direction neither parallel nor perpendicular to an orientation of the scan area. It is possible that only a portion of the scan area overlapped with the image area is exposed to the charged particle beam. It also is possible that both the shape and the size of the image area are essentially similar with that of the scan area, such that the size of the area projected by the charged particle beam is almost equal to the size of the image area.

Abstract: An electron microscope includes an electron gun for generating an electron beam, an accelerator for accelerating the electron beam to apply the electron beam to a sample, a spectroscope for selecting electrons having a specific energy out of the electron beam transmitted through the sample and losing an energy by an interaction with the sample, and a detector for detecting the electrons of the specific energy selected by the spectroscope and giving a transmission signal or a diffraction signal at a depth of the sample corresponding to a lost energy quantity of the electrons.

Abstract: A scanning transmission electron microscope operated with the sample in a high pressure environment. A preferred detector uses gas amplification by converting either scattered or unscattered transmitted electrons to secondary electrons for efficient gas amplification.

Abstract: A particle beam apparatus has an optical axis (OA), an illuminating system (1, 2, 3, 4) for illuminating an object, which is positioned in an object plane (7), with a beam of charged particles and an objective (6) for imaging the illuminated object. The beam of charged particles is split at the object into a null beam and higher diffraction orders. The illuminating system is so configured that it generates an annularly-shaped illuminating aperture in a plane Fourier transformed to the object plane (7). A phase-shifting element (9) is mounted in a focal plane (15) of the objective (6) or in a plane conjugated thereto. The focal plane (15) faces away from the object plane (7). The phase-shifting element can be an einzel lens having two outer electrodes and one or several inner electrodes disposed therebetween when seen in the direction of the optical axis. The phase-shifting element can have an additional electrode at or near the optical axis.

Abstract: The invention provides a system for achieving detection and measurement of film thickness reduction of a resist pattern with high throughput which can be applied to part of in-line process management. By taking into consideration the fact that film thickness reduction of the resist pattern leads to some surface roughness of the upper surface of the resist, a film thickness reduction index value is calculated by quantifying the degree of roughness of the part corresponding to the upper surface of the resist on an electron microscope image of the resist pattern which has been used in the conventional line width measurement. The amount of film thickness reduction of the resist pattern is estimated by applying the calculated index value to a database previously made for relating a film thickness reduction index value to an amount of film thickness reduction of the resist pattern.

Abstract: A pattern measuring apparatus which can identify a kind of gaps formed by a manufacturing process having a plurality of exposing steps such as SADP, particularly, which can suitably access a gap even if a sample has the gap that is not easily accessed is disclosed. A feature amount regarding one end side of a pattern having a plurality of patterns arranged therein and a plurality of kinds of feature amounts regarding the other end side of the pattern are extracted from a signal detected on the basis of scanning of a charged particle beam. With respect to proper kinds of feature amounts among the plurality of kinds of feature amounts, the feature amount on one side of the pattern and that on the other end side of the pattern are compared. On the basis of the comparison, the kinds of spaces among the patterns are determined.

Abstract: A charged-particle beam irradiation device, which irradiates an object to be irradiated with a charged-particle beam, includes a scanning member that scans the object to be irradiated with the charged-particle beam; an irradiation amount setting unit that sets an irradiation amount of the charged-particle beam at a plurality of target scanning positions on a scanning line of the charged-particle beam with which the scanning member scans the object to be irradiated; and a scanning speed setting unit that sets a target scanning speed of the charged-particle beam at each of the target scanning positions on the basis of the irradiation amount set by the irradiation amount setting unit.

Abstract: Provided are a method for adjusting the optical axis of a charged particle beam and a device therefor, wherein an artificial criterion is quantified, and whether or not the adjustment of the axis of a charged particle beam is necessary is judged on the basis of the quantified criterion.

Abstract: The present invention provides a scanning charged particle beam device including a sample chamber (8) and a detector. The detector has: a function of detecting light at least ranging from the vacuum ultraviolet region to the visible light region, of light (17) having image information which is obtained by a light emission phenomenon of gas scintillation when the sample chamber is controlled to a low vacuum (1 Pa to 3,000 Pa); and a function of detecting ion currents (11, 13) having image information which are obtained by cascade amplification of electrons and gas molecules. Accordingly, it becomes possible to realize a device which can deal with observation of various samples. Further, an optimal configuration of the detection unit is devised, to thereby make it possible to add value to an obtained image and provide users in wide-ranging fields with the observation image.

Abstract: A transmission electron microscope (TEM) micro-grid includes a grid, a carbon nanotube film structure and two electrodes electrically connected to the carbon nanotube film structure.

Abstract: There is provided a charged particle beam device which can prevent a specimen from not being able to be observed due to entering of a part of a grid of a mesh in a field of view, in which each pixel of a scanning transmission electron microscope image is displayed on the basis of a gray value of a predetermined gradation scale. In the case where the number of pixels of the predetermined gray value is not less than a predetermined percentage, it is judged that the mesh image is included in the scanning transmission electron microscope image. When the mesh image is not anymore included in the scanning transmission electron microscope image, the predetermined gradation scale is converted to another gradation scale and a scanning transmission electron microscope image is obtained.

Abstract: A plasma system for changing a microscopy material sample comprises a microscopy material sample holder for holding a microscopy material sample in place in a desired orientation, and a receptacle holder for receiving the sample holder and an RF antenna. The microscopy sample is positioned relative to the antenna so that no point on the antenna is in direct line-of-sight contact with the microscopy sample. This feature of avoiding direct line-of-sight contact between the antenna and the sample assists in preventing, or at least minimizing, ion sputtering of system component material onto the specimen or sample 10 that is being trimmed. Moreover, portions of the system which are in direct line-of-sight contact with the sample are comprised of material having a low sputtering yield, preferably carbon. The material may comprise graphite, and may be in the form of a carbon coating or a carbon paint.

Abstract: A transmission electron microscope (TEM) micro-grid includes a metallic grid and a carbon nanotube film structure covered thereon. A method for making a TEM micro-grid includes the steps of: (a) providing an array of carbon nanotubes, quite suitably, providing a super-aligned array of carbon nanotubes; (b) drawing a carbon nanotube film from the array of carbon nanotubes; (c) covering the carbon nanotube film on a metallic grid, and treating the carbon nanotube film and the metallic grid with an organic solvent.

Abstract: The invention relates to a dark-field detector for an electron microscope. The detector comprises a photodiode for detecting the scattered electrons, with an inner electrode and an outer electrode. As a result of the resistive behavior of the surface layer the current induced by a scattered electron, e.g. holes, are divided over the electrodes, so that a current I1 and I2 is induced, the sum of the current proportional to the energy of the impinging electron and the normalized ratio a function of the radial position where the electron impinges.

Abstract: An electron beam inspection apparatus images reflected electrons and cancels negative charging derived from electron-beam irradiation. Ultraviolet rays are irradiated and an irradiated area of ultraviolet rays is displayed as a photoelectron image. The photoelectron image and a reflected-electron image are displayed on a monitor while being superposed on each other, to easily grasp the positional relationship between the images and the difference in size between them. Specifically, the shape of the irradiated area of an electron beam includes the shape of the irradiated area of ultraviolet rays on a display screen. The intensity of the ultraviolet rays in the irradiated area of the electron beam is adjusted while the reflected-electron imaging conditions for the reflected-electron image are sustained.

Abstract: A microscope, in particular a scanning probe microscope, comprising a programmable logic device.

Abstract: A mass filter for an ion beam system includes at least two stages and reduces chromatic aberration. One embodiment includes two symmetrical mass filter stages, the combination of which reduces or eliminates chromatic aberration, and entrance and exit fringing field errors. Embodiments can also prevent neutral particles from reaching the sample surface and avoid crossovers in the beam path. In one embodiment, the filter can pass a single species of ion from a source that produces multiple species. In other embodiments, the filter can pass a single ion species with a range of energies and focus the multi-energetic ions at the same point on the substrate surface.

Abstract: In the dimension measurement of a circuit pattern using a scanning electron microscope (SEM), in order to make it possible to automatically image desired evaluation points (EPs) on a sample, and automatically measure the circuit pattern formed at the evaluation points, according to the present invention, in the dimension measurement of a circuit pattern using a scanning electron microscope (SEM), it is arranged that coordinate data of the EP and design data of the circuit pattern including the EP are used as an input, creation of a dimension measurement cursor for measuring the pattern existing in the EP and selection or setting of the dimension measurement method are automatically performed based on the EP coordinate data and the design data to automatically create a recipe, and automatic imaging/measurement is performed using the recipe.

Abstract: Disclosed are an electron beam biprism device and an electron beam device, in which, in order to implement a fringe scan method in an electron beam interferometer, a deflection function in one direction is added to the function of an electron beam biprism, and electron beams passing the left and right sides of a filament electrode can be respectively deflected at different angles.

Abstract: A system for detecting at least one contamination species in an interior space of a lithographic apparatus, including: at least one monitoring surface configured to be in contact with the interior space, a thermal controller configured to control the temperature of the monitoring surface to at least one detection temperature, and at least one detector configured to detect condensation of the at least one contamination species onto the monitoring surface.

Abstract: An object of the present invention relates to measurement of a quantitative element image with a high S/N ratio and measurement of an electron energy loss spectrum with high energy precision and energy resolution. The present invention relates to measurement of a characteristic X-ray spectrum obtained by correcting dead time due to excessive X rays and measurement of an electron energy loss spectrum obtained by correcting energy based on a zero loss peak in the case where the characteristic X-ray spectrum and the electron energy loss spectrum are measured by irradiating one irradiation position on a sample with an electron beam for a predetermined time while scanning the surface of the sample to observe a Z-contrast image. According to the present invention, it becomes possible to measure a quantitative element image with a high S/N ratio by a characteristic X ray, an element image with a high S/N ratio by an electron energy loss spectrum and a high energy resolution spectrum.

Abstract: A mechanical scanning stage for high speed image acquisition in a focused beam system. The mechanical scanning stage preferably is a combination of four stages. A first stage provides linear motion. A second stage, above the first stage, provides rotational positioning. A third stage above the rotational stage is moveable in a first linear direction, and the fourth stage above the third stage is positionable in a second linear direction orthogonal to the first direction. The four stages are responsive to input from a controller programmed with a polar coordinate pixel addressing method, for positioning a specimen mounted on the mechanical stage to allow an applied static focus beam to irradiate selected areas of interest, thereby imaged by collecting signals from the specimen using a polar coordinate pixel addressing method.