Abstract: A method of charged-particle microscopy, comprising: irradiating a sample surface S to cause radiation to emanate from the sample; detecting at least a portion of said emitted radiation recording an output On of said detector arrangement as a function of emergence angle ?n of said emitted radiation, measured relative to an axis normal to S thus compiling a measurement set M={(On, ?n)} for a plurality of values of ?n; automatically deconvolving the measurement set M and spatially resolve it into a result set R={(VK, Lk)},in which a spatial variable V demonstrates a value Vk at an associated discrete death level Lk referenced to the surface S, whereby n and K are members of an integer sequence, and spatial variable V represents a physical property of the sample as a function of position in its bulk.

Abstract: Embodiments of the invention relate to electron microscopy. Example embodiments relate to an apparatus including a first electron beam source, a second electron beam source, and a receiving unit. The first electron beam source is configured to provide a first low-voltage electron beam to a surface of a sample. The second electron beam source is configured to provide a second low-voltage electron beam to pass through the sample. The receiving unit is configured to analyze the first low-voltage electron beam, or the second low-voltage electron beam, or both the first and the second electron beam to obtain information about the sample.

Abstract: A transmission electron microscope includes an electron gun 1 that irradiates a sample 5 with an electron beam 2; an electron detector 13 that detects electrons that are passed through the sample 5 and scattered; a first detection-side annular aperture 15 that is located between the electron detector 13 and the sample 5 and has a ring-shaped slit that limits inner and outer diameters of a transmission region of electrons scattered from the sample 5; and a second detection-side annular aperture 16 that is located between the first detection-side annular aperture 15 and the electron detector 13 and has a ring-shaped slit that limits inner and outer diameters of a transmission region of scattered electrons that have passed through the first detection-side annular aperture 15. It is, therefore, possible to detect electrons scattered at high scattering angles without a limitation caused by a spherical aberration of an electron lens and improve a depth resolution.

Abstract: Embodiments of the invention relate to electron microscopy. Example embodiments relate to an apparatus including a first electron beam source, a second electron beam source, and a receiving unit. The first electron beam source is configured to provide a first low-voltage electron beam to a surface of a sample. The second electron beam source is configured to provide a second low-voltage electron beam to pass through the sample. The receiving unit is configured to analyze the first low-voltage electron beam, or the second low-voltage electron beam, or both the first and the second electron beam to obtain information about the sample.

Abstract: A transmission electron microscope (TEM) includes an electron beam source (2), an illumination lens (4), a first objective lens (6), a second objective lens (8), a selected area aperture (16), a projector lens (10), a detector (12), and a control portion (22). A first plane (17) is located between the second objective lens (8) and the projector lens (10). The control portion (22) performs first sets of processing for controlling the illumination lens (4) such that an electron beam (L) hits the sample (S), controlling the second objective lens (8) such that a diffraction pattern of the sample (S) is imaged onto the first plane (17), and controlling the projector lens (10) such that a TEM image of the sample (S) formed by the second objective lens (8) is focused onto a second plane where the light-sensitive portion (13) of the detector (12) is disposed.

Abstract: There is proposed a charged particle beam apparatus including: a plurality of noise removal filters that remove noise of an electrical signal; a measurement unit that measures the contrast-to-noise ratio after applying one of the noise removal filters; and a determination unit that determines a magnitude relationship between the contrast-to-noise ratio measured by the measurement unit and a threshold value set in advance.

Abstract: A charged-particle microscopy includes irradiating a sample in measurement sessions, each having an associated beam parameter (P) value detecting radiation emitted during each measurement session, associating a measurand (M) with each measurement session, thus providing a data set (S) of data pairs {Pn, Mn}, wherein an integer in the range of 1?n?N, and processing the set (S) by: defining a Point Spread Function (K) having a kernel value Kn for each value n; defining a spatial variable (V); defining an imaging quantity (Q) having fore each value of n a value Qn that is a three-dimensional convolution of Kn and V, such that Qn=Kn*V; for each value of n, determining a minimum divergence min D(Mn?Kn*V) between Mn and Qn, solving V while applying constraints on the values Kn.

Abstract: An electron detector includes a plurality of assemblies, the plurality of assemblies including a first assembly having a first SiPM and a first scintillator made of a first scintillator material directly connected to an active light sensing surface of the first SiPM, and a second assembly having a second SiPM and a second scintillator made of a second scintillator material directly connected to an active light sensing surface of the second SiPM, wherein the first scintillator material and the second scintillator material are different than one another. Alternatively, an electron detector includes an assembly including an SiPM and a scintillator member having a front surface and a back surface, the scintillator member being a film of a scintillator material directly deposited on to an active light sensing surface of the SiPM.

Abstract: Disclosed is a scanning charged particle microscope provided with an aberration measuring means that measures high-order geometrical aberration at high precision and high speed. An image obtained by a single-hole aperture and an image obtained by a multiple-hole aperture arranged in a region larger than that for the single-hole aperture are deconvoluted, an aberration quantity is determined based on the profiles of beams tilted in a plurality of directions and the obtained quantity is fed back to an aberration corrector.

Abstract: A transmission electron microscopy system comprises: an illumination system (2), an objective lens system (13), a first projection system (21) imaging the diffraction plane (15) objective lens system into a first intermediate diffraction plane (25), a second projection system (41) imaging the first intermediate diffraction plane into a second intermediate diffraction plane (43), a first aperture (27) located in the first intermediate diffraction plane and having a central opening of a first radius (r1), and a bright field detector (45) located in the second intermediate diffraction plane and having a detection surface defined by an inner edge (49) of a second radius (r2), wherein the first radius and the second radius define a maximum angle and a minimum angle, respectively, relative to the optical axis of directions of bright field electrons traversing the sample plane and detectable by the bright field detector.

Abstract: This electron scanning microscope comprises an electron source (102), electron optical systems (109, 110, 111) for exposing a sample (113) to primary electron beams (138), an electron detector (127) for detecting signal electrons (139) emitted from the sample, and a deceleration electrical field-type energy filter (108). The deceleration electrical field-type energy filter has a conductor thin film (304) for distinguishing the energy of signal electrons. With this configuration, it is possible to realize a scanning electron microscope having a deceleration electrical field-type energy filter with which high energy resolution is obtained, even in a case where the scanning electron microscope has a retarding optical system.

Abstract: A method for correcting an image made from a system having a plurality of settings wherein the system has optical artifacts which vary according to the settings. The method includes acquiring one reference image of a substantially uniform subject with the system at a first setting. Acquiring a second reference image of the uniform subject with the system at a second setting. Storing both reference images and correcting a subject image acquired by the system by using either the first reference image or the second reference image, depending on the setting at which the subject image was acquired. The method is capable of acquiring and storing multiple reference images and storing them with assignment to multiple settings.

Abstract: The present invention provides an electron beam measurement technique for measuring the shapes or sizes of portions of patterns on a sample, or detecting a defect or the like. An electron beam measurement apparatus has a unit for irradiating the patterns delineated on a substrate by a multi-exposure method, and classifying the patterns in an acquired image into multiple groups according to an exposure history record. The exposure history record is obtained based on brightness of the patterns and a difference between white bands of the patterns.

Abstract: An electron beam device includes a first electron biprism between an acceleration tube and irradiation lens systems, and an electron biprism in the image forming lens system. The first electron biprism splits the electron beam into first and second electron beams, radiated to differently positioned first and second regions on objective plane of an objective lens system having a specimen perpendicular to an optical axis. The first and second electron beams are superposed on the observation plane by the electron biprism of the image forming lens system. The superposed region of those electron beams is observed or recorded. Optical action of the irradiation lens system controls each current density of the first and second electron beams on the objective plane of the objective lens system having the specimen, and distance on electron optics between the first electron biprism and the objective plane of the objective lens system having the specimen.

Abstract: A method of obtaining PINEM images includes providing femtosecond optical pulse, generating electron pulses, and directing the electron pulses towards a sample. The method also includes overlapping the femtosecond optical pulses and the electron pulses spatially and temporally at the sample and transferring energy from the femtosecond optical pulses to the electron pulses. The method further includes detecting electron pulses having an energy greater than a zero loss value, providing imaging in space and time.

Abstract: A focused ion beam apparatus, including: a sample holder provided with a fixing surface for fixing, via a deposition film, a micro-specimen extracted from a specimen using a method for fabrication by a focused ion beam, in which a width of the fixing surface is smaller than 50 microns; a specimen transferring unit having a probe to which the specimen can be joined through the deposition film, and transferring the micro-specimen extracted from the specimen by the focused ion-beam fabrication method, to the sample holder; and a sample chamber in which the sample, the sample holder and the probe are laid out, wherein, in the sample chamber, the micro-specimen extracted from the specimen by the focused ion-beam fabrication method is fixed to the fixing surface of the sample holder through the deposition film, and the micro-specimen fixed to the fixing surface is fabricated by irradiating the focused ion beam.

Abstract: A transmission electron microscope includes an electron beam source to generate an electron beam. Beam optics are provided to converge the electron beam. An aberration corrector comprising either a foil or a set of concentric elements corrects the electron beam for at least a spherical aberration. A specimen holder is provided to hold a specimen in the path of the electron beam. A detector is used to detect the electron beam transmitted through the specimen. The transmission electron microscope may be configured to operate in a dark-field mode in which a zero beam of the electron beam is not detected. The microscope may also be capable of operating in an incoherent illumination mode.

Abstract: A charged particle apparatus is equipped with a third stigmator positioned between the objective lens and a detector system, as a result of which a third degree of freedom is created for reducing the linear distortion. Further, a method of using said three stigmators, comprises exciting the first stigmator to reduce astigmatism when imaging the sample, exciting the second stigmator to reduce astigmatism when imaging the diffraction plane, and exciting the third stigmator to reduce the linear distortion.

Abstract: A precision of removal of a damaged layer of a sample created by machining with an FIB machining device depends on a skill of an operator. During removal machining of the damaged layer generated by an ion beam, transmitted electrons which are generated by irradiating an electron beam formed in an electron beam optics system onto a sample are detected by a two-dimensional detector, and a moment for finishing the removal machining of the damaged layer is determined based on the amount of blur of a diffraction pattern acquired with the two-dimensional detector.

Abstract: A shielding member for a charged particle beam apparatus includes a conductive substrate; and a through hole extending through the conductive substrate. The conductive substrate is comprised of a material having a specific electrical resistivity in a range from about 106 ?cm to about 1012 ?cm.

Abstract: The present invention provides a charged particle beam device in which the change of expansion/contraction of a specimen which is an observing object is restricted thereby eliminating position deviation of the observing object and significantly increasing its throughput. The present invention includes specimen holding means for holding a specimen, temperature regulation means which can regulate the temperature of the specimen, and temperature regulation means control means which can control the temperature regulation means based on various conditions.

Abstract: A charged particle beam system includes a charged particle beam source to generate a charged particle beam; an objective lens to focus the charged particle beam in an object plane; a first condenser lens disposed in a beam path of the charged particle beam between the charged particle beam source and the objective lens; a deflector disposed in the beam path between the first condenser lens and the objective lens and configured to change an angle of incidence of the charged particle beam in an object plane; and an aberration corrector disposed in the beam path between the deflector and the objective lens and configured to compensate aberrations introduced by the objective lens. The aberration corrector is also configured to not compensate aberrations introduced by the first condenser lens.

Abstract: An electron beam apparatus equipped with a review function of a semiconductor wafer includes a scanning electron microscope to obtain image information of a semiconductor wafer, and an information processing apparatus to process the image information. The information processing apparatus includes a data input unit to receive positional information of a defect on the wafer, a storage for storing a plurality of image information of a position on the wafer corresponding to the positional information, and an image processing unit that retrieves any of the plurality of image information, and classifies the retrieved image information corresponding to the positional information depending on the type of defect.

Abstract: A crystal material lattice strain evaluation method includes illuminating a sample having a crystal structure with an electron beam in a zone axis direction, and selectively detecting a certain diffracted wave diffracted in a certain direction among a plurality of diffracted waves diffracted by the sample. The method further includes repeating the illuminating step and the selectively detecting step while scanning the sample, and obtaining a strain distribution image in a direction corresponding to the certain diffracted wave from diffraction intensity at each point of the sample.

Abstract: Beam scanning for obtaining a scanned image is performed by an aberration corrector, which is an aberration measured lens, and a scanning coil disposed above an objective lens, instead of a scanning coil ordinarily placed on the objective lens. Thus, distortion with an aberration of an aberration measured lens is scanned on the surface of a sample, and then a scanned image is formed from a scattered electron beam, a transmission electron beam, or a reflected/secondary electron beam that is generated by the scan, achieving a scanning aberration information pattern equivalent to a conventional Ronchigram. Such means is a feature of the present invention.

Abstract: There is provided a charged particle beam device which has a mechanism adjusting the shape of an ionic liquid droplet to be adhered to a sample and the thickness of a film of the ionic liquid, in such a manner that they are suitable for various types of observations by an electronic microscope and the like, and for processing using ion beams. The charged particle beam device is characterized in that it includes an ionic liquid holding member having an opening, an ionic liquid supplying unit for filling an ionic liquid into the opening, an observation unit for observing an adhesion state of the ionic liquid, and charged particle beam generating units for radiating charged particle beams, and can adjust the thickness of an ionic liquid droplet to be filled in the opening, when the charged particle beam device observes a sample in a state where it is floating in the ionic liquid by being dispersed into the ionic liquid or on a surface of the ionic liquid.

Abstract: A system and a method for material analysis of a microscopic element, the method comprising: illuminating an area that includes at least a portion of the microscopic element by a charged particle beam, detecting particles that are generated in the area in response to the charged particle beam and analyzing the detected particles to provide an indication about a material characteristic of the microscopic element, wherein the operation of illumination is implemented as a sequence of displacement compensation determination periods, each provided between consecutive material analysis periods, the method further comprising evaluating during a displacement compensation determination period, a displacement of the charged particle beam with respect to the microscopic element and during a consecutive material analysis period applying a spatial adjustment measure as required, thereby compensating for a drift of the charged particle beam.

Abstract: A charged particle beam system for performing precession diffraction includes a lens 11 for focusing a beam 5 in an object plane 9, and an objective lens 13 having a diffraction plane 27. A doublet 53 of lenses 35, 63 images the diffraction plane 27 into an intermediate diffraction plane 69 where a multipole 55 is located. A doublet 57 of lenses 65, 93 images the intermediate diffraction plane 69 into an intermediate diffraction plane 71 where a multipole 59 is located. A first deflection system 15 upstream of the object plane 9 can tilt to change an angle of incidence of the beam on the object plane. A second deflection system 37 between lenses 35 and 63 tilts the beam such that the change of the angle of incidence of the charged particle beam on the object plane is compensated.

Abstract: One embodiment relates to a focused electron beam imaging apparatus. The apparatus includes an electron beam column, an electron source, a gun lens, a pre-scanning deflector, a main scanning deflector, an objective lens, and a detector. The pre-scanning deflector comprises a 12-pole electrostatic deflector which is configured to controllably deflect the electron beam away from the optical axis of the electron beam column. Another embodiment relates to a method of scanning an electron beam over a target substrate in a focused electron beam imaging instrument. The electron beam is controllably deflected, without third-order deflection aberrations, away from an optical axis of an electron beam column using a pre-scanning deflector. The electron beam is then controllably deflected back towards the optical axis using a main scanning deflector so that the electron beam passes through a center of an objective electron lens. Other embodiments, aspects and features are also disclosed.

Abstract: An improved method and apparatus for S/TEM sample preparation and analysis. Preferred embodiments of the present invention provide improved methods for TEM sample creation, especially for small geometry (<100 nm thick) TEM lamellae. A novel sample structure and a novel use of a milling pattern allow the creation of S/TEM samples as thin as 50 nm without significant bowing or warping. Preferred embodiments of the present invention provide methods to partially or fully automate TEM sample creation, to make the process of creating and analyzing TEM samples less labor intensive, and to increase throughput and reproducibility of TEM analysis.

Abstract: Since charging characteristics differ between the outer circumferential portion and the center portion of a sample to be inspected, equivalent inspection sensitivities cannot be obtained in the outer circumferential portion and the center portion of the sample to be inspected. A sample cover is provided in the outer circumferential portion of a sample holder on which the sample to be inspected is placed. Charging characteristics of the sample cover are changed according to charging characteristics of the sample to be inspected. Consequently, uniform charged states can be formed in the outer circumferential portion and the center portion of the sample. Inspection/observation of the outer circumferential portion of the sample can be realized at higher sensitivity than in the past.

Abstract: A method of measuring a step height of a device using a scanning electron microscope (SEM), the method may include providing a device which comprises a first region and a second region, wherein a step is formed between the first region and the second region, obtaining a SEM image of the device by photographing the device using a SEM, wherein the SEM image comprises a first SEM image region for the first region and a second SEM image region for the second region, converting the SEM image into a gray-level histogram and calculating a first peak value related to the first SEM image region and a second peak value related to the second SEM image region, wherein the first peak value and the second peak value are repeatedly calculated by varying a focal length of the SEM, and determining a height of the step by analyzing a trend of changes in the first peak value according to changes in the focal length and a trend of changes in the second peak value according to the changes in the focal length.

Abstract: A field-emission electron gun including an electron emission tip, an extractor anode, and a mechanism creating an electric-potential difference between the emission tip and the extractor anode. The emission tip includes a metal tip and an end cone produced by chemical vapor deposition on a nanofilament, the cone being aligned and welded onto the metal tip. The electron gun can be used for a transmission electron microscope.

Abstract: There is provided an image-reconstruction system capable of implementing a multi-axes reconstruction technique for lessening a burden on the part of a user, and precluding artifacts high in contrast, contamination of a sample, and restrictions imposed on a sample for use, occurring due to use of markings A plurality of tilt-images photographed by tilting a sample at sample-tilt axes, differing from each other; are acquired, misregistration is corrected by a rotation step-angle, a rotated object under observation is tilted in angle-steps, differing from each other, to pick up images thereof, two reconstruction images obtained by correcting respective misregistrations of two reconstruction images created from respective tilt-image groups are created, and one reconstruction image is created by superimposing one of the two reconstruction images on the other.

Abstract: A transmission electron microscope apparatus, a sample holder and a sample stage and a method for acquiring spectral images as well are provided which can acquire spectral images at a time from a plurality of samples and measure highly accurate chemical shifts from electron energy loss spectra extracted from the spectral images.

Abstract: A beam device, in particular a particle beam device, for analyzing an object is provided, as well as a system comprising a particle beam device and an optical microscope for optically analyzing an object. The beam device simplifies the exchange and reduces the time of the exchange of objects to be examined. The beam device includes at least one beam generator that generates a beam, at least one objective lens that focuses the beam on an object arranged in a holding element. The objective lens comprises at least one connecting element. The holding element may be connected to the connecting element so that the holding element is removable from the connecting element for modification of the object. Alternatively, the holding element may be mounted to a beam column.

Abstract: An inspecting apparatus for reducing a time loss associated with a work for changing a detector is characterized by comprising a plurality of detectors 11, 12 for receiving an electron beam emitted from a sample W to capture image data representative of the sample W, and a switching mechanism M for causing the electron beam to be incident on one of the plurality of detectors 11, 12, where the plurality of detectors 11, 12 are disposed in the same chamber MC. The plurality of detectors 11, 12 can be an arbitrary combination of a detector comprising an electron sensor for converting an electron beam into an electric signal with a detector comprising an optical sensor for converting an electron beam into light and converting the light into an electric signal. The switching mechanism M may be a mechanical moving mechanism or an electron beam deflector.

Abstract: Provided is a method and an apparatus for inspecting a sample surface with high accuracy. Provided is a method for inspecting a sample surface by using an electron beam method sample surface inspection apparatus, in which an electron beam generated by an electron gun of the electron beam method sample surface inspection apparatus is irradiated onto the sample surface, and secondary electrons emanating from the sample surface are formed into an image toward an electron detection plane of a detector for inspecting the sample surface, the method characterized in that a condition for forming the secondary electrons into an image on a detection plane of the detector is controlled such that a potential in the sample surface varies in dependence on an amount of the electron beam irradiated onto the sample surface.

Abstract: Provided is an electron microscope system using an augmented reality in that it recognizes a sample identification information by using an observation image generated through an electron microscope and the observation image is linked with the pre-set sample information according to the recognized sample identification information, so that an augmented reality image thereof is provided, thereby even the unskilled man can easily utilize the electron microscope and it can generate excitement about an education thereof.

Abstract: The present invention relates to a charged particle system for reticle or semiconductor wafer defects inspection and review, and more particularly, relates to an E-beam inspection tool for reticle or semiconductor wafer defects inspection and review without gravitational AMC settling. The charged particle system is an upside down electron beam inspection system with an electron beam aimed upward. The face down design may prevent AMC from gravitational settling on the inspected face of the specimen during inspection, thereafter having a cleaner result compared with conventional face-up inspection system.

Abstract: An auxiliary stage for holding an electron microscope specimen includes a bottom part and a supporting part. The bottom part includes a first top surface, and the supporting part includes a second top surface and a side surface. The supporting part is fixed on the first top surface, and the side surface of the supporting part is substantially perpendicular to the first top surface of the bottom part. Therefore, the auxiliary stage is in a shape of a reversed T. A slit is embedded in the second top surface of the supporting part. A specimen holder is mounted in the slit, and a specimen is fixed on the specimen holder.

Abstract: A novel specimen holder for specimen support devices for insertion in electron microscopes. The novel specimen holder of the invention provides mechanical support for specimen support devices and as well as electrical contacts to the specimens or specimen support devices.

Abstract: A transmission electron microscope (100) includes an electron beam source (2), an illumination lens (10), an objective lens (20), an intermediate lens system (30), a pair of transfer lenses (40) located behind the intermediate lens system (30), and an energy filter (60) for separating the electrons of the beam L transmitted through the specimen (S) according to energy. The transfer lenses (40) transfer the first image to the entrance crossover plane (S1) of the energy filter (60) and to transfer the second image to the entrance image plane (A1) of the filter (60). An image plane (A3) is formed between the first transfer lens (40a) and the second transfer lens (40b).

Abstract: The present invention is directed to method and system for image processing of test wells on a microplates wherein the microplates' test well wall boundaries are identified through the use of a candidate edge image wherein the candidate edge image represents locations of one or more segments of the wall boundaries.

Abstract: A device for holding a specimen holder, the device including a body with a slot formed therein. The slot includes an interior for receiving the specimen holder which may be a flat disk with edges and a pair of opposing sides. The disk may be made of a resilient deformable material. The slot may be sized to receive the specimen holder through an open top end and may taper from top bottom, such that the bottom end of the slot is smaller than the specimen holder. The slot further configured to contact the specimen holder along edges of the specimen holder and to allow some sideways deformation of the specimen holder without either side of the specimen holder distant from the edges coming into contact with the interior of the slot.

Abstract: A method includes irradiating a surface of a sample, which is made-up of multiple types of materials, with a beam of primary electrons. Emitted electrons emitted from the irradiated sample are detected using multiple detectors that are positioned at respective different positions relative to the sample, so as to produce respective detector outputs. Calibration factors are computed to compensate for variations in emitted electron yield among the types of the materials, by identifying, for each material type, one or more horizontal regions on the surface that are made-up of the material type, and computing a calibration factor for the material type based on at least one of the detector outputs at the identified horizontal regions. The calibration factors are applied to the detector outputs. A three-dimensional topographical model of the surface is calculated based on the detector outputs to which the calibration factors are applied.

Abstract: An inspection apparatus is provided comprising in combination at least an optical microscope (2, 3, 4) and an ion- or electron microscope (7, 8) equipped with a source (7) for emitting a primary beam (9) of radiation to a sample (10) in a sample holder. The apparatus may comprise a detector (8) for detection of secondary radiation (11) backscattered from the sample and induced by the primary beam. The optical microscope is equipped with an light collecting device (2) to receive in use luminescence light (12) emitted by the sample and to focus it on a photon-detector (4).

Abstract: A system for controlling a tool-to-tool disparity between a plurality of scanning electron microscopes includes a measuring unit for measuring a tool-to-tool disparity between plural scanning electron microscopes based on information extracted from secondary electron images which are captured by imaging a reference pattern, a tool state monitoring unit for monitoring tool states of each of the plural scanning electron microscopes, and an output unit for displaying on a screen a relationship between the tool-to-tool disparity between the plural scanning electron microscopes and tool states of each of the plural scanning electron microscopes monitored by the tool state monitoring unit. The tool state monitoring unit monitors the tool states of each of the plural scanning electron microscopes while imaging the reference pattern by using each of the plural scanning electron microscopes.

Abstract: A method is provided that includes the steps of i) providing a specimen in the form of a wafer having a measurement area and a reference area, assumed to be without deformations and coplanar with the measurement area; ii) illuminating one face of the specimen with an electron beam (Fin); iii) superposing a beam (F1B) of radiation diffracted by the measurement area (B) with a beam (F1A) of the radiation diffracted by the reference so as to cause these two beams to interfere; iv) measuring the spatial periodicity and the orientation of the fringes of the interference pattern (FI); and v) deducing from this a difference in the lattice parameter and/or the orientation between the reference and measurement areas, which is indicative of a state of deformation of the latter at the nanoscale. A device and system for implementing the method is also provided.

Abstract: One embodiment relates to a method of classifying a defect on a substrate surface. The method includes scanning a primary electron beam over a target region of the substrate surface causing secondary electrons to be emitted therefrom, wherein the target region includes the defect. The secondary electrons are detected from the target region using a plurality of at least two off-axis sensors so as to generate a plurality of image frames of the target region, each image frame of the target region including data from a different off-axis sensor. The plurality of image data frames are processed to generate a surface height map of the target region, and surface height attributes are determined for the defect. The surface height attributes for the defect are input into a defect classifier. Other embodiments, aspects and features are also disclosed.