Abstract: The invention comprises a charged particle beam injection method and apparatus used in conjunction with multi-axis charged particle radiation therapy of cancerous tumors. The negative ion beam source includes a negative ion beam source, vacuum system, an ion beam focusing lens, and/or a tandem accelerator. The negative ion beam source uses electric field lines for focusing a negative ion beam. The negative ion source plasma chamber includes a magnetic material, which provides a magnetic field barrier between a high temperature plasma chamber and a low temperature plasma region. The injection system vacuum system and a synchrotron vacuum system are separated by a conversion foil, where negative ions are converted to positive ions. The foil is sealed to the edges of the vacuum tube providing for a higher partial pressure in the injection system vacuum chamber and a lower pressure in the synchrotron vacuum system.

Abstract: The invention relates to a new technology which uses a surface modification method for ultra-precision machining, and in particular relates to a particle beam-assisted ultraprecision machining method for single-crystal brittle materials. The invention, the particle beam-assisted ultra-precision machining method for single-crystal brittle materials, can significantly improve machining accuracy, reduce surface finish and greatly reduce tool wear during ultra-precision machining of brittle materials.

Abstract: The present invention relates to a dose-measurement device for ion implantation, the device comprising a module CUR for estimating implantation current, a secondary electron detector DSE, and a control circuit CC for estimating the ion current by taking the difference between said implantation current and the current from said secondary electron detector. Furthermore, said high-energy secondary electron detector comprises a collector COL, P supporting exactly three mutually insulated electrodes: a first repulsion electrode G1, A1, T1 for repelling charges of a predetermined sign that are to be repelled, said electrode being provided with at least one orifice for passing electrons; a second repulsion electrode G2, A2, T2 for repelling charges of the opposite sign that are to be repelled, said electrode also being provided with at least one orifice for passing electrons; and a selection electrode G3, A3, T3, this electrode also being provided with at least one orifice for passing electrons.

Abstract: The invention relates to a lithography system comprising a plurality of lithography system units. Each lithography system unit comprises a lithography apparatus arranged in a vacuum chamber for patterning a substrate; a load lock system for transferring substrates into and out of the vacuum chamber; and a door for enabling entry into the vacuum chamber for servicing purposes. The load lock system and the door of each lithography system unit are provided at the same side and face a free area at a side of the lithography system, in particular the service area.

Abstract: A system and method comprising an ion production chamber having a plasma source disposed in said chamber, a harvest gas disposed to flow through the chamber from an inlet to an outlet, and a jet, said jet operable to introduce a sample into the harvest gas flow. In some embodiments the system includes using helium as the harvest gas. Certain embodiments include introducing a sample perpendicular to the harvest gas flow and using multiple sample introduction jets to increase mixing efficiency. The charge sample may be coupled to a MEMS-based electrometer.

Abstract: One embodiment relates to an electron beam apparatus. The apparatus includes a source for generating an incident electron beam, an electron lens for focusing the incident electron beam so that the beam impinges upon a substrate surface and interacts with surface material so as to cause secondary emission of scattered electrons, and a detector configured to detect the scattered electrons. The apparatus further includes an advantageous device configured to trap the scattered electrons which are emitted at sharp angles relative to the sample surface plane of the substrate surface. Other embodiments are also disclosed.

Abstract: Irradiation of a surface of a material with a gas cluster ion beam modifies the wettability of the surface. The wettability may be increased or decreased dependent on the characteristics of the gas cluster ion beam. Improvements in wettability of a surface by the invention exceed those obtained by conventional plasma cleaning or etching. The improvements may be applied to surfaces of medical devices, such as vascular stents for example, and may be used to enable better wetting of medical device surfaces with liquid drugs in preparation for adhesion of the drug to the device surfaces. A mask may be used to limit processing to a portion of the surface. Medical devices formed by using the methods of the invention are disclosed.

Abstract: An apparatus for detecting one or each of Kikuchi and Kossel diffraction patterns is provided. The apparatus comprises an electron column adapted in use to provide an electron beam (101) directed to wards a sample (102), the electron beam (101) having an energy in the range 2 keV to 50 keV, and a particle detector (111) for receiving and counting particles (103) from the sample (102) due to interaction of the electron beam (101) with the sample (102), the detector comprising an array of pixels (109) and having a count rate capability of at least 1000 particles per second for each pixel. The particle detector (111) is further adapted to provide electronic energy filtering of the received particles in order to count the received particles which are representative of the said diffraction pattern.

Abstract: A method for detecting defects includes irradiating at least one electron beam into a first region of a substrate, irradiating at least one electron beam into a second region electrically connected to the first region, and detecting secondary electrons emitted from the second region. The electron beam irradiated into the first region may be the same or different from the electron beam irradiated into the second region. Alternatively, different beams may be simultaneously irradiated into the first and second regions. An image generated based on the secondary electrons shows a defect in the substrate as a region having a grayscale difference with other regions in the image.

Abstract: The invention provides a method for single-step terminal sterilization process for bio-active heparin coatings on materials and biomaterials containing heparin used in medical devices, such as catheters, tissue engineering scaffolds, or drug delivery carrier materials. This may include any medical device or implantable that could benefit from improved antithrombotic and biocompatible heparin surfaces. Other relevant device examples may include heparin or a heparin derivative coated stents to reduce clotting and restenosis, dental or ophthalmological implants. These materials may comprise additional polymeric compositions such as polyethyleneimine, dextran sulfate or their modified forms. These polymers together with heparin coatings may be applied to other substrate of medical devices such as metal, ceramics or biologically derived materials.

Abstract: Disclosed herein is a multi-particle beam column including electrode layer with eccentric apertures. The multi-particle beam column includes two or more particle beam columns each comprising a particle beam emission source, a deflector, and two or more electrode layers. The multi-particle beam column includes at least one electrode layer having one or more apertures that are eccentric from respective beam optical axes of the particle beam columns.

Abstract: There are provided a leaf row in which a plurality of leaf plates are arranged in the thickness direction of the row in such a way that the respective one end faces of the leaf plates are trued up and a leaf plate drive mechanism that drives each of the plurality of leaf plates in such a way that the one end face approaches or departs from a beam axis. In each of the leaf plates, a facing side facing a leaf plate that is adjacent to that leaf plate in the thickness direction is formed of a plane including a first axis on the beam axis; the leaf plate drive mechanism drives the leaf plate along a circumferential orbit around the second axis, on the beam axis, that is perpendicular to the beam axis and the first axis.

Abstract: Ion beam sample preparation apparatus and methods are described. The apparatus has disposed in a vacuum chamber at least one tilting ion beam irradiating means with intensity control, a rotation stage with rotation control, a sample holder, and an adjustable positioning stage that has two axes of positional adjustment that are operable to move the region of the sample being prepared by the ion beam relative to the ion beam. The apparatus may also include a vacuum-tight optical window for observing the sample and a shutter for protecting the optical window from debris while the sample is prepared in the ion beam. The apparatus may also include an instrument controller responsive to the state of the apparatus and to the condition of the sample and is operable to control the preparation of the sample.

Abstract: A method for improving bioactivity and/or biodegradation time of a collagen surgical implant and collagen surgical implants having such improved properties. A gas-cluster ion-beam (GCIB) is formed in a reduced-pressure chamber, a collagen surgical implant is introduced into the reduced-pressure chamber, and at least a first portion of the surface of said collagen surgical implant is irradiated with a GCIB-derived beam.

Abstract: A system for dual mode operation in an ion implanter may include a movable beam blocker to adjust beam width of an ion beam in a first direction perpendicular to a first local direction of propagation of the ion beam. The system may further include a scanner to scan the ion beam in a second direction perpendicular to a second local direction of propagation of the ion beam when in a first state and to transmit the ion beam unperturbed in a second state; and mode selector to send a set of signals to the movable beam blocker and to the scanner in order to adjust the width of the ion beam and state of the scanner in concert.

Abstract: A septum magnet includes a yoke that can be separated at the approximately center portion thereof in the axis direction; a septum coil; a return coil; and a vacuum duct that is inserted between the septum coil and the return coil. The septum coil is formed in such a way as to be able to be separated into a first portion and a second portion in response to separation of the yoke; and in a space between the septum coil and the vacuum duct, there is provided an auxiliary coil, in two portions of which, corresponding to the first portion and the second portion of the septum coil, electric currents flow in opposite direction to each other in a circumferential direction.

Abstract: A maskless charged particle lithography system comprises an electron-optical column and a data path. The column includes a blanker array including blanker elements. The data path comprises a preprocessing system, transmission channels, and a pattern streaming system. The lithography system is configured for exposing a target field in two passes by allocating a first beamlet subset for exposing a first field subset during a first pass and a second beamlet subset for exposing a second field subset during a second pass. A first beam selector selects a first pattern data subset containing exposure data for the first beamlet subset and a second pattern data subset containing exposure data for the second beamlet subset. Second beam selectors connect transmission channels assigned for transmitting the first pattern data subset to a first blanker elements subset, and transmission channels assigned for transmitting the second pattern data subset to a second blanker elements subset.

Abstract: The invention relates to a system for magnetically shielding a charged particle lithography apparatus. The system comprises a first chamber, a second chamber and a set of two coils. The first chamber has walls comprising a magnetic shielding material, and, at least partially, encloses the charged particle lithography apparatus. The second chamber also has walls comprising a magnetic shielding material, and encloses the first chamber. The set of two coils is disposed in the second chamber on opposing sides of the first chamber. The two coils have a common axis.

Abstract: A method and system for creating an asymmetrical lamella for use in an ex situ TEM, SEM, or STEM procedure is disclosed. The shape of the lamella provides for easy orientation such that a region of interest in the lamella can be placed over a hole in a carbon film providing minimal optical and spectral interference from the carbon film during TEM, SEM, or STEM procedure of chemical analysis.

Abstract: The invention relates to a method of using a phase plate, having a thin film, in a transmission electron microscope (TEM), comprising: introducing the phase plate in the TEM; preparing the phase plate by irradiating the film with a focused electron beam; introducing a sample in the TEM; and forming an image of the sample using the prepared phase plate, wherein preparing the phase plate involves locally building up a vacuum potential resulting from a change in the electronic structure of the thin film by irradiating the phase plate with a focused beam of electrons, the vacuum potential leading to an absolute phase shift 10 with a smaller value than at the non-irradiated thin film. Preferably the phase plate is heated to avoid contamination. The phase shift achieved with this phase plate can be tuned by varying the diameter of the irradiated spot.

Abstract: A system to control an ion beam in an ion implanter includes a detector to perform a plurality of beam current measurements of the ion beam along a first direction perpendicular to a direction of propagation of the ion beam. The system also includes an analysis component to determine a beam current profile based upon the plurality of beam current measurements, the beam current profile comprising a variation of beam current along the first direction; and an adjustment component to adjust a height of the ion beam along the first direction when the beam current profile indicates the beam height is below a threshold.

Abstract: Biomass (e.g., plant biomass, animal biomass, and municipal waste biomass) is processed to produce useful products, such as fuels. For example, systems can use feedstock materials, such as cellulosic and/or lignocellulosic materials and/or starchy or sugary materials, to produce ethanol and/or butanol, e.g., by fermentation.

Abstract: A charged particle beam irradiation apparatus includes: a transport line configured to transport a charged particle beam; and a rotating gantry rotatable around a rotation axis, wherein the transport line has an inclined section configured to make the charged particle beam advancing in a direction of the rotation axis advance to be inclined so as to become more distant from the rotation axis, and is formed so as to turn the charged particle beam advanced in the inclined section to a rotational direction of the rotation axis and bend the charged particle beam turned to the rotational direction to the rotation axis side, the rotating gantry is formed of a tubular body which can accommodate an irradiated body and supports the transport line, and the inclined section is disposed to pass through the inside of the tubular body of the rotating gantry.

Abstract: A charged particle beam writing apparatus includes a storage unit configured to store writing data in which there are defined a plurality of figures and resizing information indicating, with respect to each of the plurality of figures, a resizing status whether or not to perform resizing and a resizing direction used when performing resizing, a judgment determination unit configured to input the writing data and judge, with respect to each of the plurality of figures, the resizing status whether or not to perform resizing and the resizing direction used when performing resizing, a resize processing unit configured to resize, with respect to each of the plurality of figures, a dimension of a figure concerned in a judged resizing direction when it is judged to perform resizing, and a writing unit configured to write a pattern onto a target workpiece with using a resized figure and a charged particle beam.

Abstract: Systems and methods for preparing solid samples for analysis, such as microscopic examination in cross section or planimetric orientation. The sample preparation systems may include a sample support configured to secure a solid sample, an excitation beam source that generates an excitation beam configured to remove material from a surface of the sample, a beam shield configured to at least partially protect the sample from the excitation beam, and a beam shield holder configured to secure the beam shield, where the adjustment of the relative positions of the beam shield and sample holder permits the excitation beam to selectively expose a series of substantially planar surfaces of the sample.

Abstract: A method of pre-treating an ultra high vacuum charged particle gun chamber by ion stimulated desorption is provided. The method includes generating a plasma for providing a plasma ion source, and applying a negative potential to at least one surface in the gun chamber, wherein the negative potential is adapted for extracting an ion flux from the plasma ion source to the at least one surface for desorbing contamination particles from the at least one surface by the ion flux impinging on the at least one surface.

Abstract: Medical implants with non-equilibrium surface structures are disclosed. The surface treatment of the implants greatly enhances osseointegration, reduces time to recovery following implant surgery, reduces surgery-related infections, and improves outcomes. The implants, including dental implants and other implants for insertion into or attachment to bone, are applicable to treatment of a wide variety of medical conditions. The methods of altering the surface properties of medical implants include exposure of a crystalline surface material, such as metal or ceramic, to a short burst of high thermal energy or shock, resulting in the introduction of a non-equilibrium concentration of crystal lattice defects in a surface layer.

Abstract: A charged particle beam irradiation system including: an accelerator configured to accelerate charged particles and emit a charged particle beam; a stand in which an irradiation section is disposed; a transport line which has an energy selection system configured to extract a charged particle beam having a second energy width smaller than a first energy width from a charged particle beam having the first energy width, emitted from the accelerator, and is configured to transport the charged particle beam from the accelerator to the irradiation section; and a building having an irradiation chamber and a separate room, wherein the accelerator is disposed in the irradiation chamber, the energy selection system of the transport line is disposed in the separate room, and the building has a partition wall which separates the irradiation chamber and the separate room and is configured to shield against radiation.

Abstract: A stage apparatus includes first, second, third, and fourth stages arranged along a plane defined by first and second axes orthogonal to each other, each of the first to fourth stages holding an article and being subjected to scanning along the plane, and a controller configured to control the scanning of the first to fourth stages in synchronization such that a pair of the first and second stages and a pair of the third and fourth stages are respectively positioned symmetrically to each other with respect to the first axis and a pair of the first and third stages and a pair of the second and fourth stages are respectively positioned symmetrically to each other with respect to the second axis.

Abstract: Provided are a carbon ion generation target and a treatment apparatus including the same. The treatment apparatus includes a support member, a carbon ion generation target fixed to the support member, and a laser for irradiating laser beam into the carbon ion generation target to generate carbon ions from the carbon ion generation target, thereby projecting the carbon ions onto a tumor portion of a patient. Here, the carbon ion generation target includes a substrate and carbon thin films disposed on the substrate.

Abstract: A settling time acquisition method includes writing at least one reference pattern formed by at least one shot of a charged particle beam, writing an evaluation pattern, which has been formed by combination of the first and second shots of a charged particle beam shaped to first and second patterns of different sizes and whose width size is the same as that of the reference pattern, while changing, concerning beam shaping of the second shot, a settling time of a DAC amplifier, wherein writing is performed for each settling time, measuring the width size of the reference pattern, measuring the width size of the evaluation pattern for each settling time, calculating, for each settling time, a difference between the width sizes of the reference and evaluation patterns, and acquiring a settling time from each settling time of the DAC amplifier when the difference is not exceeding a threshold value.

Abstract: A apparatus according to an embodiment includes a unit to generate first blocks in a writing region in which at least one of writing groups respectively using different base doses is to be written, a unit to generate second blocks for proximity effect correction, in the each of the regions of the groups, a unit to calculate an area density in each of the first blocks, a unit to perform a weighting calculation on the area density for each of the first blocks by using a base dose of a corresponding group, a unit to calculate a dose coefficient for proximity effect correction, for each of the second blocks, by using a corresponding weighted area density, and a unit to calculate a dose by using the base dose of the each of the groups and the dose coefficient of the each of the second blocks.

Abstract: Systems and methods for lithography include actuating an electroactive polymer member to position mask and/or substrate.

Abstract: A target supply device 4 may include a tank 51, formed of a metal, that holds a target material, an insulating member 62 that makes contact with at least part of the periphery of the tank 51, and a heater 58 that is separated from the tank 51 and heats the tank 51 via the insulating member 62.

Abstract: A charged-particle beam irradiation device, which irradiates an irradiation target with a charged-particle beam, includes a transport line that transports the charged-particle beam and a rotating gantry that is rotatable about a rotation axis. The transport line includes an inclination portion making the charged-particle beam travel so that the charged-particle beam is inclined to be separated from the rotation axis, and is formed to turn the charged-particle beam in a rotation direction of the rotation axis and to bend the charged-particle beam, which has turned in the rotation direction, toward the rotation axis. The rotating gantry is formed of a cylindrical portion that receives the irradiation target and supports the transport line. The inclination portion is disposed in the cylindrical portion of the rotating gantry. The charged-particle beam irradiation device further includes blocking members that block radiation emitted from the transport line disposed in the cylindrical portion.

Abstract: Disclosed is a formed article comprising an ion-implanted layer obtained by implanting ions of a silicon compound into a polymer layer. Also disclosed are: a method of producing the formed article, the method comprising implanting ions of a silicon compound into a surface of a polymer layer of a formed body that includes the polymer layer in its surface; an electronic device member comprising the formed article; an electronic device comprising the electronic device member. Consequently, the present invention provides: a formed article which has excellent gas barrier capability, bendability and surface flatness; a method of producing the formed article, an electronic device member comprising the formed article; an electronic device comprising the electronic device member.

Abstract: A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned resist features on a first side of the substrate and generating a plasma in the process chamber having a plasma sheath adjacent to the first side of the substrate. The method may further comprise modifying a shape of a boundary between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the substrate facing the plasma, wherein ions from the plasma impinge on the patterned resist features over a wide angular range during a first exposure.

Abstract: An improved method of preparing ultra-thin TEM samples that combines backside thinning with an additional cleaning step to remove surface defects on the FIB-facing substrate surface. This additional step results in the creation of a cleaned, uniform “hardmask” that controls the ultimate results of the sample thinning, and allows for reliable and robust preparation of samples having thicknesses down to the 10 nm range.

Abstract: A charged particle beam writing apparatus includes an unit to measure height positions of a substrate, an unit to input a position dependent height distribution obtained by converting each position error of a pattern generated depending on each corresponding writing position of the substrate into a value in a height direction, and to add the position dependent height distribution to a height distribution obtained based on the height positions in order to correct the height distribution of the substrate, an unit to calculate a deflection shift amount of a pattern to be written by using a corrected height distribution, an unit to calculate a deflection amount for deflecting a beam to a position where a calculated deflection shift amount has been corrected, and an unit to write a pattern on the substrate by deflecting the beam by a calculated deflection amount.

Abstract: The movement-free bending method means the one of deformation methods for a one- or two-dimensional nanostructures using an ion beam capable of bending and deforming them and furthermore, changing a bending direction without requiring a motion such as a rotation of the nanostructures. The present invention affords a movement-free bending method for deforming the nanostructure 20 having the one-dimensional or two-dimensional shape by irradiating the ion beam 10, wherein a bending direction of the nanostructure 20 is controlled depending on energy of the ion beam 10 or a thickness of the nanostructure 20.

Abstract: A method and apparatus for preparing thin TEM samples in a manner that reduces or prevents bending and curtaining is realized. Embodiments of the present invention deposit material onto the face of a TEM sample during the process of preparing the sample. In some embodiments, the material can be deposited on a sample face that has already been thinned before the opposite face is thinned, which can serve to reinforce the structural integrity of the sample and refill areas that have been over-thinned due to a curtaining phenomena. In other embodiments, material can also be deposited onto the face being milled, which can serve to reduce or eliminate curtaining on the sample face.

Abstract: Methods of marking paper products and marked paper products are provided. Some methods include irradiating the paper product to alter the functionalization of the paper.

Abstract: Methods of marking paper products and marked paper products are provided. Some methods include irradiating the paper product to alter the functionalization of the paper.

Abstract: In a particle beam therapy system which scans a particle beam and irradiates the particle beam to an irradiation position of an irradiation subject and has a dose monitoring device for measuring a dose of the particle beam and an ionization chamber smaller than the dose monitoring device, the ionization chamber measuring a dose of a particle beam passing through the dose monitoring device, the dose of the particle beam irradiated by the dose monitoring device is measured; the dose of the particle beam passing through the dose monitoring device is measured by the small ionization chamber; and a correction coefficient of the dose measured by the dose monitoring device corresponding to the irradiation position is found based on the dose of the particle beam measured by the small ionization chamber.

Abstract: A device for charged particle beam lithography is disclosed which includes an inputting device, a character projection stencil and a reducing lens. The inputting device reads a set of shots, where each shot has a magnification. The character projection stencil contains a character pattern. The reducing lens introduces magnification variation of the stencil character pattern when writing the pattern onto a surface, where the magnification of the reducing lens can be varied from shot to shot.

Abstract: An electron beam lithography method and apparatus for improving throughput is disclosed. An exemplary lithography method includes receiving a pattern layout having a pattern layout dimension; shrinking the pattern layout dimension; and overexposing a material layer to the shrunk pattern layout dimension, thereby forming the pattern layout having the pattern layout dimension on the material layer.

Abstract: A shield structure for electron beam sterilization equipment. The shield structure satisfies at least one of the following conditions: (I) an outer diameter D4 of an internal circumferential shield S4 is larger than an outer diameter D5 of an internal circumferential shield S5, and (II) an internal circumferential shield ST2 of a circular path LT2 downstream of an entrance trap zone Z1 connected to an outer-surface sterilization zone Z2 has an outer diameter DT2 that is larger than an outer diameter D1 of an internal circumferential shield S1 of a circular path L1 upstream of the outer-surface sterilization zone Z2.

Abstract: The primary collimator for a radiotherapy apparatus can be made up of several layers, each comprising several apertures, and each layer being moveable so as to select a specific aperture to build up the primary collimator shape. In this way, the shape of the primary collimator can be tailored and/or the beam filters incorporated into the primary collimator assembly. This saves space in the radiation head whilst also allowing filters to be easily interchanged.

Abstract: A cross-section processing and observation method including: acquiring a surface image by scanning and irradiating a surface of a sample with ion beam; setting, on the surface image, a first sliced region and a second sliced region for performing the slice processing, the second sliced region being adjacent to the first sliced region and having a longitudinal length obtained by subtracting a slice width of the second sliced region from a longitudinal length of the first sliced region; forming a cross-section by irradiating the first sliced region and the second sliced region with the ion beam; and acquiring a cross-sectional image by irradiating the cross-section with electron beam.

Abstract: Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.