Abstract: An exposure device in which a strip-like workpiece is transported by a grip feeding method, is to be able to expose the strip-like workpiece without being tensile stressed is achieved as follows: A feed grip part holds a strip-like workpiece. The workpiece is transported downstream in the transport direction. During transport of the workpiece, the serpentine of the workpiece is determined and corrected. After stopping the motion of the workpiece, it is attached by a workpiece holding device which is located upstream of an exposure part. Then, the feed gripper part is moved according to the amount of stretching of the workpiece upstream in the transport direction, while the workpiece remains clamped by the feed grip part. In this way, the tensile force exerted on the workpiece is eliminated. Next, the workpiece is attached by a second workpiece holding device. The workpiece is attached by suction by a workpiece carrier. The mask is moved, alignment is performed and the workpiece is exposed.

Abstract: In a method of detecting a position of a position detection grating mark formed with a small step structure on a surface of a flat object, an illumination light beam is irradiated on the grating mark at a predetermined incident angle. The illumination light beam includes a plurality of coherent beams having n (n≧3) different wavelengths &lgr;1, &lgr;2, &lgr;3, . . . , &lgr;n. The n wavelengths are set to approximately satisfy the following relation within a range of about ±10%: (1/&lgr;1−1/&lgr;2)=(1/&lgr;2−1/&lgr;3)= . . . =(1/&lgr;n−1−1/&lgr;n) where the wavelengths have a condition &lgr;1<&lgr;2<&lgr;3 . . . <&lgr;n. Photoelectric detection of a change in light amount of a diffracted light component generated from the grating mark in a specific direction is performed upon irradiation of the illumination light beam having the n wavelength components.

Abstract: An apparatus for emitting a beam to a sample used for manufacturing a semiconductor device in order to process the sample, includes a chamber having an opening, a moving mechanism provided in the chamber, for moving the sample in X-, Y- and Z-axis directions, and a beam emitting system associated with the opening of the chamber, for emitting a beam to the sample in the chamber. The apparatus further includes an optical position detector for guiding a coherent light beam into the chamber and detecting a light beam output from the chamber. The optical position detector has light beam generating unit for generating a coherent light beam to be emitted to the sample, light-receiving unit for receiving a light beam from a surface of the sample, and converting unit for converting a signal output from the light-receiving unit into signals in the X-, Y- and Z-axis directions.

Abstract: In an exposure method, using a first exposure apparatus including a reticle having an exposure pattern, a first pattern is formed on a resist film on a semiconductor substrate. Using a second exposure apparatus including a reticle having an exposure pattern identical with the aforementioned reticle, a second pattern is formed on the resist film having the first pattern. Based on error information between patterns obtained from the first and second patterns, non-linear error of the first exposure apparatus with respect to the non-linear error of the second exposure apparatus is calculated. Based on the information obtained by the correction data calculating step, the non-linear error of the second exposure apparatus is made equal to the non-linear error of the first exposure apparatus.

Abstract: A lithographic projection apparatus comprising: a radiation system (7) for supplying a projection beam (25) of radiation; a mask table (5) provided with a mask holder (27) for holding a mask (29); a substrate table (1) provided with a substrate holder (17) for holding a substrate (19); a projection system (3) for imaging an irradiated portion of the mask (29) onto a target portion (35) of the substrate (19), the substrate holder (17) comprising a plate (2) having a face (4) which is provided with a matrix arrangement of protrusions (6), each protrusion (6) having an extremity (6′) remote from the face (4) and being thus embodied that the said extremities (6′) all lie within a single substantially flat plane (6″) at a height H above the face (4), the substrate holder (17) further comprising a wall (8) which protrudes from the face (4), substantially encloses the matrix arrangement, and has a substantially uniform height h above the face (4), whereby h<H, the face (4) inside the wall (

Abstract: A system and method for achieving alignment of a mask and substrate focuses a first image (e.g., a reticle) on a first position of a first substrate surface, and determines whether the first position is aligned with a second position on an opposing second substrate surface based on a second image formed based on light from a micro-optical device located on the second surface which collects light from a first image focused thereon. To determine whether the first and second positions are aligned, the first image and the second image are projected on an image plane and compared, the first and second positions being aligned when the first image and the second image are coincident on the image plane. A mask and/or alignment pattern may be formed on the opposing substrate surfaces, and used to generate aligned optics on those surfaces. As such, precise alignment between optics on opposing surfaces of a substrate can be achieved.

Abstract: A method for manufacturing a color filter colors a large number of filter elements on a substrate respectively in a predetermined color. A filter element is colored while an ink-jet head nozzle and the filter element are aligned. The method comprises a detection step of detecting the position of the filter element, a correction step of correcting a relative position of the filter element and a discharge nozzle for discharging coloring material, based on position information of the filter element detected at the detection step, so that the filter element and the discharge nozzle are aligned, and a coloring step of coloring the filter element by discharging the coloring material by the discharge nozzle.

Abstract: This invention is a method of adjusting a reduction projection exposure device having a light source, an illumination optical system, and a reduction image-forming optical system.

Abstract: An alignment mark protection structure (95) is disclosed which is used to ensure an integrity of an alignment scheme for a substrate (50) which is to be subjected to lithographic processing. The alignment mark protection structure (95) comprises the substrate (50) and an alignment mark (52) associated with the substrate (50). The alignment mark (52) reflects an alignment light (208) which is then used to determine an optimum alignment between the substrate (50) and a lithographic mask (214). A cap (100) overlies the alignment mark (52) and is substantially transparent with respect to the alignment light (208). The cap (100) protects the underlying alignment mark (52) from lithographic process-induced damage during processing and thus reduces alignment light noise, thereby improving the alignment between a mask (214) and the substrate (50) and minimizing the registration error associated with overlying layers formed on the substrate (50).

Abstract: The present invention relates to a system for determining the alignment of an object, whose image is to be recorded, with a coupling eyepiece and an image capture apparatus that defines an image plane (Pi), comprising: an image capture apparatus (2) equipped with the ability for adjusting its own position; a light source (1) that emits at least two non-focused luminous dots (1a, 1b); eyepiece coupling lens(es) or element(s) (3) that focus on an object plane (Po); an opaque mask (4) that is perforated with at least two holes (5a, 5b) and that is positioned in front of light source (1) such that it transmits at least part of the light emitted by the light source; and calculating mechanism for determining whether alignment exists and, in the case of non-alignment, for quantifying the non-alignment.

Abstract: Improvements in a focusing apparatus having an objective optical system for optically manufacturing a workpiece, forming a desired pattern on a surface of a workpiece or inspecting a pattern on a workpiece and used to adjust the state of focusing between the surface of the workpiece and the objective optical system. The focusing apparatus has a first detection system having a detection area at a first position located outside the field of the objective optical system, a second detection system having a detection area at a second position located outside the field of the objective optical system and spaced apart from the first position, and a third detection system having a detection area at a third position located outside the field of the objective optical system and spaced apart from each of the first and second positions.

Abstract: An exposure apparatus comprises a projection optical system, which projects a pattern formed on a mask on a photosensitive substrate, a mounting object table, which holds the photosensitive substrate, a positioning stage, which positions the mounting object table along a 2-dimensional movement coordinate system, a stage coordinate measurement device, which detects the position of the mounting object table in the 2-dimensional movement coordinate system, a height measurement device, which detects the deviation in the optical axis direction of the projection optical system from the surface of the photosensitive substrate to a specified standard surface in a measurement point fixed with regard to the 2-dimensional movement coordinate system, a levelling device, which adjusts the inclination of the mounting object table with regard to the positioning stage, a computation device, which calculates the amount of levelling necessary to match the surface of the photosensitive substrate with the standard surface, a con

Abstract: A scanning exposure apparatus includes a projection optical system, a reticle stage for scanningly moving a reticle relative to the projection optical system a wafer stage for scanningly moving a wafer relative to the projection optical system, in a timed relation with the reticle scan movement, and a holding mechanism for holding the reticle on the reticle stage during the reticle scan movement. The holding mechanism includes a first mechanism for confining an end edge portion of the reticle in a scan direction and a second mechanism for pressing the reticle in a direction perpendicular to a pattern surface of the reticle.

Abstract: An exposure has at least two wafer pads for holding wafers at the same time to perform different tasks including exposing a wafer, aligning a wafer, and loading or unloading a wafer synchronously. The exposure of the invention includes an exposing unit, a wafer supporting unit and a alignment beam scan unit. The wafer-supporting unit contains at least two wafer pads for holding wafers. The alignment beam scan unit contains an interferometer for detecting the interference patterns formed by the alignment beams and the alignment marks on the wafers. The tasks of aligning a wafer, and exposing a wafer, or loading/unloading a wafer can be performed on the wafers placed on each individual wafer pad synchronously.

Abstract: A height meter for measuring the height of a first surface of a transparent object is described, which height meter comprises a radiation source for supplying a converging measuring beam whose chief ray extends at an angle to the normal on the surface, and a radiation-sensitive detection unit for detecting a radiation beam reflected by the surface to be measured. Since a diaphragm is arranged in the path of this beam, it is prevented that radiation reflected by a second surface situated opposite the first surface can reach the detection unit. The height meter is notably suitable for an inspection device for a lithographic mask.

Abstract: An aberration of a projection exposing apparatus system is measured from the difference between widths of both-end lines even in a fine pattern having a pattern line width of less than 0.2 .mu.m. A resist film on a substrate is exposed to light, using a mask having a line-and-space (LS) pattern. This exposure is repeated plural times at plural exposures, so as to obtain, at the respective exposures, the differences between the widths of the both-end lines of the line-and-space pattern. The difference between the widths of the both-end lines at a standard (optimal) exposure is estimated from the relationship between the differences between the widths of the both-end lines and the exposures, so as to obtain an aberration at the standard exposure.

Abstract: An alignment device, for use in a lithographic apparatus, for aligning a first object, provided with a first alignment mark relative to a second object, provided with a second alignment mark, employs as a radiation source a laser which emits an alignment beam having a wavelength which is of the order of 1000 nm and to the order of 1100 nm.

Abstract: Random components for each characteristic amount of a paper type to be examined are extracted on the basis of characteristic amounts of the paper type which are read from a plurality of portions on the paper type and reference data previously found with respect to the plurality of portions. Dirt components for each of the plurality of portions on the paper type to be examined are presumed on the basis of the extracted random components for each characteristic amount and a predetermined forecast model of the dirt components. The truth of the paper type to be examined is judged on the basis of the presumed dirt components and the extracted random components.

Abstract: An object of a inventions of the present application is raising the pattern position precision by stabilizing the temperature of a reticle or a reduction lens in a projection aligner. The projection aligner comprises a reticle stage with a reticle, a light source emitting light to the reticle, a reduction lens projecting the light onto the wafer via the reticle, and a temperature control unit controlling the temperature of the reticle or/and a reduction lens by a clean air.

Abstract: An alignment apparatus according to the present invention is constructed, for example, which is arranged in an exposure apparatus provided with a projection optical system which projects a predetermined pattern formed on a mask onto a substrate under exposure light, which performs relative positioning between the mask and the substrate, which has light irradiating means for irradiating alignment light in a wavelength region different from that of exposure light onto an alignment mark formed on the substrate through the projection optical system and detecting means for detecting light from the alignment mark through the projection optical system, wherein, for alignment light as irradiation light traveling toward the alignment mark and alignment light as detection light from the alignment mark, there are provided correction optical elements for irradiation light and correction optical elements for detection light to cause axial chromatic aberration and magnification chromatic aberration in the opposite directio

Abstract: A method provides a technique for exposing a pattern on a mask that is held by a mask stage onto a substrate. The method includes a first step of detecting a mark on the mask that is held at a first position by the mask stage and determining a corresponding position of the mask stage; a second step of detecting the mark on the mask that is held at a second position different from the first position by the mask stage and determining a corresponding position of the mask stage; a third step of determining a position of the mask relative to the mask stage in accordance with the detection results in the first and second steps; a fourth step of aligning the mask with the substrate; and a fifth step of exposing the pattern on the mask onto the substrate.

Abstract: The relative positions of an alignment mark on a wafer and index marks on an index plate within an optical system are detected by image processing. The index marks are illuminated by an illuminating light which is independent of an illuminating light for the wafer mark. An image of the wafer mark by a return light from the wafer and images of the index marks by the independent illuminating light are simultaneously picked up by a CCD image pickup device and the position of the first mark is detected from a combined image of these images by image processing.

Abstract: A positioning method of detecting a position of an object, fixed on a driving device, in a direction of height as a driving direction, by a surface position detector, while scanning the object in a direction perpendicular to the driving direction of the driving device and positioning and correction driving the object by the driving device to sequentially set the object at a predetermined position and a predetermined height. The method includes a step of monitoring a driving condition of the driving device in synchronism with a periodical detection performed by the surface position detector and a step of correcting a drive amount of the driving device on the basis of the periodical detection performed by the surface position detector and a result of the monitoring performed in the monitoring step.

Abstract: A position detecting apparatus for detecting the position of a substrate in an interval direction in which the substrate is spaced by an interval form a pattern-printing projection optical system for printing pattern on the substrate includes first and second luminous flux projecting and receiving systems and a detector. The first luminous flux projecting system projects a first luminous flux to the substrate form a direction oblique to the interval direction. The first luminous flux receiving system receives a first luminous flux after the first luminous flux is reflected form the substrate. The second luminous flux projecting system projects a second luminous flux to a reflection member secured to the bottom end of the pattern-printing projection optical system. The second luminous flux receiving system receives the second luminous flux after the second luminous flux is reflected by the reflection member.

Abstract: In an exposure apparatus and method utilizing a projection system, a surface state relating to an exposure area of the projection system is determined by illuminating the exposure area with light, receiving light from the exposure area, designating positions of a plurality of detection points in the exposure area in accordance with a size of the exposure area, and detecting, based on information of received light corresponding to the plurality of detection points, positions related to the plurality of detection points.

Abstract: A dynamic mask exposure system and method includes a support for a workpiece, a source of a beam of exposure radiation, and a transmissive dynamic mask with orthogonally arranged matrices of actuator lines and binary pixel units which are opaque or transparent as a function of control inputs to the actuator lines, the transmissive dynamic mask having a top surface and a bottom surface. A control system is connected to supply pixel control signals to the actuator lines of the transmissive dynamic mask to form a pattern of transparent regions and opaque regions. The beam is directed down onto the top surface of the mask. A workpiece and/or an image detection element for detecting a pattern of radiation projected thereon is located on the top surface of the support. The beam passes through the transparent regions and projecting a pattern from the mask onto the support where the workpiece or onto the image detection element is to be located.

Abstract: An electronic beam type exposure or inspection or measurement apparatus and method including an electron optical system, an electron beam image detection optical system for detecting a secondary electron beam image generated from an inspected object by electron beams irradiated from the electron optical system, and an optical height detection apparatus for optically detecting a height of a surface in an area on the inspected object. A focus controller is provided for calculating a focus control current or a focus control voltage based on a correction parameter between a height of a surface on the inspected object and a focus control current or a focus control voltage and supplying the same to an objective lens of the electron optical system in such a manner that an electron beam is focused on the inspected object in a properly- focused state.

Abstract: An exposure apparatus for transferring a pattern formed on a mask to a photosensitive substrate is provided with an illumination optical system for illuminating a local area on the mask with a light beam, a projection optical system for projecting the pattern of the mask to the photosensitive substrate and a relative scanning device for relatively scanning the mask and the photosensitive substrate in a perpendicular direction to the optical axis of the projection optical system so as to transfer the pattern of the mask to the photosensitive substrate.

Abstract: A position detecting apparatus is used with an exposure apparatus for projecting a mask pattern onto a substrate. The position detecting apparatus detects a position of an alignment mark formed on the substrate by sending light through a film having a wavelength-selective feature. The position detecting apparatus includes a light sending system for emitting the position detecting light, a wavelength changing device for adjusting a wavelength band of the position detecting light directed onto the alignment mark, on the basis of the wavelength transmittance of the film having the wavelength-selective feature, and a light receiving system for detecting the light from the alignment mark. The position of the alignment mark can be determined on the basis of a photoelectric conversion signal outputted from the light receiving system.

Abstract: A wafer detection apparatus for detecting wafers received in stages formed in a wafer carrier is provided which includes a light emitting section arranged movably in the thickness direction of wafers which are received in the stages along the peripheral wall of the wafer carrier, for emitting detection light toward the position of each stage for receiving a wafer, a light receiving section arranged movably in the thickness direction of the wafers for receiving the detection light emitted from the light emitting section and outputting a received light amount, a drive mechanism for moving the light emitting section and the light receiving section together relative to the wafer carrier, a storage device supplied with an input signal from the light receiving section and storing a history of change of the received light amount, and determining means for determining whether a wafer is received in each stage of the wafer carrier or not based on a received light amount curve indicative of change of the received light

Abstract: An aligning method suitably usable in a semiconductor device manufacturing exposure apparatus of step-and-repeat type, for sequentially positioning regions on a wafer to an exposure position. In one preferred form, the marks provided on selected regions of the wafer are detected to obtain corresponding mark signals and then respective positional data related to the positions or positional errors of the selected regions are measured, on the basis of the mark signals. Then, the reliability of each measured positional data of a corresponding selected region is detected, on the basis of the state of a corresponding mark signal or the state of that measured positional data and by using fuzzy reasoning, for example.

Abstract: A projection exposure apparatus (1) comprises an incident light optical system for causing the light emitted from a light source 1 to enter an object of exposure (4) in diagonal direction, a detection apparatus (3) for causing an interference between the light reflected from the object of exposure (4) and a reference light and detecting the resultant interference fringe, a processing circuit for determining the inclination and height of the surface of the object of exposure (4) from the optical information on the interference fringe, and a stage (7) for supporting the object of exposure (4). The object of exposure (4) is subjected to projection exposure by driving the stage (7) according to the calculated inclination and height of the object of exposure (4).

Abstract: A plurality of chips each having two or more alignment holes for transmitting a laser beam are stacked. The laser beam is irradiated onto the uppermost or lowermost one of the stacked chips. A photodetector detects the laser beam output from the stacked chips through the alignment holes in these chips. The positions of the chips are so controlled that the amount of the light detected by this photodetector is a maximum.

Abstract: A focus test mask for a projection exposure system, a focus monitoring system using the same, and a focus monitoring method include a transparent substrate and a focus test pattern formed on the substrate. The focus test pattern includes a first light shielding pattern and a second light shielding pattern placed inside the first light shielding pattern. Both light shielding patterns have fine protruding patterns arranged along edges of respective first and second closed geometric shapes defining the light shielding patterns. The focus test pattern projected onto the surface of the object allows quantitative measurement of the optimal focuses of the projection exposure system. By using the focus test mask for a projection exposure system, the optimal focuses of the projection exposure system can be periodically measured easily and precisely.

Abstract: A scanning exposure apparatus of the present invention is constructed in such an arrangement that while a mask and a substrate are moved relatively to a projection optical system, a pattern formed on the mask is projected for exposure through the projection optical system onto the substrate. The scanning exposure apparatus is provided with a leveling control portion for successively controlling an amount of relative inclination between the substrate and the mask with movement thereof, based on a predetermined leveling angle command .theta.

Abstract: A method of aligning a mask pattern and a wafer pattern by referring to alignment marks on chips is provided wherein all of the chips to be used for alignment are classified into a plurality of groups so that the shot array alignment is carried out by referring to the alignment marks which are provided at different positions in individual chips. The alignment marks and chip positions for the alignment marks are different for each of the groups.

Abstract: The present invention provides a thermal printing system equipped with at least 3 light sources and 3 photodetectors positioned opposite thereto for detecting the type of dye donor element. One of said light source illuminates a dye frame whereas the other illuminate detection marks in a margin of the dye donor element. The thermal printing system according to the invention allows to distinguish between a dye donor element for color printing and black and white printing and according to an embodiment is also capable to detect further variants. The present invention further provides a dye donor element for use in such thermal printing system and to a method for detecting the type of dye donor element.

Abstract: Disclosed is a method to measure the actual exposure image of an evaluation pattern on a reticle with increased the accuracy to determine the best focus position. An evaluation mark is formed on a reticle. The evaluation mark is comprised of an arrangement in a lattice form (regular geometric arrangement) in the measurement direction, of multiple basic marks formed by the arrangement in the non-measurement direction of multiple wedge-shaped marks, which are pointed in the measurement direction. While the focus position of the wafer is changed and while the wafer is laterally shifted, the image of the evaluation mark is transferred onto the wafer. After the wafer is developed, the position of the image of the evaluation mark is measured by means of an alignment sensor. The center position of the image of the evaluation mark shifts towards the point of the wedge-shaped marks the closer the surface of the wafer comes to the best focus position.

Abstract: An illumination optical apparatus includes a light source emitting an illumination light beam, the illumination light beam being directed along a predetermined optical path, a variable optical filter disposed on the predetermined optical path of the illumination light beam for controlling the intensity of the illumination light beam, a transmissivity of the variable optical filter with respect to the illumination light beam being continuously variable, and an optical integrator receiving the illumination light beam that has passed through the variable optical filter to form a plurality of images of the light source.

Abstract: There is disclosed an exposure method for transferring, using an optical system for illuminating a mask having patterns to be transferred on a substrate and a projection optical system for projecting images of the patterns to the substrate, the patterns to the substrate through the projection optical system by means of scanning the mask and the substrate synchronously relative to the projection optical system. The method comprises the steps of providing a plurality of measuring marks on the mask formed along a relative scanning direction, and providing a plurality of reference marks formed on the stage corresponding to the measuring marks, respectively, moving the mask and the substrate synchronously in the relative scanning direction to measure successively a displacement amount between the measuring marks on the mask and the reference marks, and obtaining a correspondence relation between a coordinate system on the mask and a coordinate system on the stage according to the displacement amount.

Abstract: An exposure apparatus, which has a projection optical system, a Z-stage movable in the optical axis direction of the projection optical system, an X-Y stage movable in a planar direction perpendicular to the optical axis direction, and a sensor for measuring the positional relationship between a substrate placed on the Z-stage and a predetermined position in the optical axis direction and/or any tilt of the substrate, sequentially moves and aligns the X-Y stage to change the area to be exposed on the substrate, executes a measurement using the sensor, and exposes while correcting the positional relationship between the substrate and the predetermined position in the optical axis direction and/or any tilt of the substrate in accordance with the measurement result, has a control unit for adjusting the measurement start timing of the sensor in correspondence with a change in area to be exposed on the substrate.

Abstract: A chip leveling apparatus of wafer exposure equipment adjusts the diameter of the light incident on a wafer according to the chip size so that the inclination of that area can be accurately detected for use in leveling the wafer in preparation for exposure. A wafer leveling stage supports the wafer during its exposure. A stage driving mechanism can adjust the inclination of the wafer leveling stage relative to the horizontal. A light source produces a collimated beam of light which is directed towards the wafer exposure field at an acute angle. A location sensor is fixed in position to receive the light once the light has reflected from the exposure field, and thereby senses the inclination of the exposure field. A computer controller receives information from the sensor and controls the stage driving mechanism accordingly.

Abstract: A detecting system for detecting positional information related to a surface of an object. The detecting system includes a variable pattern generator for projecting an arbitrary pattern image on the surface of the object, a light projecting optical system for projecting a pattern, defined by the variable pattern generator, to the surface of the object along an oblique direction, a light receiving optical system for directing light from an image of the pattern and a light receiving element for detecting the light directed by the light receiving optical system. Surface position information about the surface of the object is detected on the basis of the detection by the light receiving element.

Abstract: A surface displacement detection apparatus that detects the displacement of a substrate W with respect to a predetermined reference plane (X-Y plane). The apparatus includes an illumination optical system that irradiates light toward a first detection location among N detection locations initially removed from each other on substrate W, wherein N.gtoreq.2. The apparatus also includes a re-illumination optical system that directs light reflected from the first detection location to subsequent detection locations on substrate W so that the light from the illumination optical system impinges on each of the N detection locations. The apparatus further includes a detection optical system that converges the light reflected from the last detection location on substrate W onto a light receiving surface, a photoelectric detection unit that photoelectrically detects the displacement of the light received at the light receiving surface.

Abstract: The present invention provides for the accurate placement of an object having a surface pattern by relating the perimeter of the object to the surface pattern, such as a circuit pattern of a semiconductor die. This includes illuminating the object at its front and rear faces and viewing the object with a machine vision system. Front-side illumination of the surface pattern enables the machine vision system to obtain an image of the actual position of the circuit pattern or other pattern of interest on the front of the component. Rear illumination provides a silhouette of the perimeter edges of the component enabling the machine vision system to obtain the actual position of the perimeter edges of the component. A corrective offset from a normative feature location, such as the centroid defined by the perimeter edges of the component, is then calculated.

Abstract: A projection exposure apparatus includes a projection optical system which projects an image of a pattern formed on a mask on a substrate. The projection optical system has a first optical system for forming an intermediate image of the pattern, a first mirror disposed near the intermediate image for deflecting a light beam from the first optical system, and a second optical system for condensing the light beam from the first mirror and forming the image of the pattern on the substrate. The first optical system and the second optical system are subject to an aberration correction with respect to a first wavelength for exposure. A second mirror is disposed near the first mirror and corrects at least a portion of a chromatic aberration generated in the first optical system and the second optical system with respect to a second wavelength different from the first wavelength.

Abstract: An alignment method useable with an original having a pattern and a substrate having a surface area on which the pattern of the original is printed. The alignment method comprises detecting plural marks, calculating plural times, the amount of rotational deviation on the basis of different combinations of marks, calculating the quantity of rotational correction of the original and the substrate by using the computed rotational deviations, and aligning on the basis of the calculated quantity of the rotational deviation.

Abstract: In a sheet feeding device, the local feed of the sheet is measured in the vicinity of respective drive rollers by means of respective sensors for the purpose of aligning rectangular sheets of a preselected set. On the basis of signals from the light sensors, a control device determines an optimum pair of rollers for aligning the sheet. The control device compares the signals of the two associated sensors and adjusts the local feed of the sheet in such a way that the two sensors establish the same local feed, before the sheet leaves one of the selected rollers.

Abstract: An exposure apparatus for exposing mask patterns on a sensitive plate comprises a set (for X and Y direction) of a laser interferometer for measuring a position of a wafer stage and satisfying Abbe's condition with respect to a projection lens and a set (for X and Y direction) of the laser interferometer and satisfying Abbe's condition with respect to off-axis alignment system.When a fiducial mark on the wafer stage is positioned directly under the projection lens, a presetting is performed so that measuring values by the two sets of laser interferometers are equal to each other.

Abstract: A projection optical apparatus comprising a projection optical system for projectively focusing a pattern image of a mask under illumination by light of first wavelength onto a sensitive substrate, a stage holding the sensitive substrate, a fiducial plate disposed on the stage, a first mark detector for illuminating light of second wavelength different from the first wavelength, through a first mark area formed on the mask and the projection optical system, onto .[.the sensitive substrate or.]. a second mark area formed on the fiducial plate, then detecting optical information produced from the second mark area, a fourth mark area formed on .[.the sensitive substrate or.].