Abstract: A laser transmitter is provided including a specialized compensator assembly damping mechanism. In accordance with one embodiment of the present invention, a compensator assembly position detector is arranged to detect a position X1 of the compensator assembly with respect to the X-axis, and a position Y1 of the compensator assembly with respect to the Y-axis. The compensator assembly damping mechanism includes an X-axis magnetic damping mechanism, a Y-axis magnetic damping mechanism, and a rotational damping mechanism. The active feedback circuit is arranged to (i) drive the X-axis magnetic damping mechanism so as to increase a damping force generated by the X-axis magnetic damping mechanism as a rate of change of the signal indicative of the position x1 increases, and (ii) drive the Y-axis magnetic damping mechanism so as to increase a damping force generated by the Y-axis magnetic damping mechanism as a rate of change of the signal indicative of the position y1 increases.

Abstract: An exposure apparatus for transferring a pattern formed on a mask to a photosensitive substrate is provided with an illumination optical system for illuminating a local area on the mask with a light beam, a projection optical system for projecting the pattern of the mask to the photosensitive substrate and a relative scanning device for relatively scanning the mask and the photosensitive substrate in a perpendicular direction to the optical axis of the projection optical system so as to transfer the pattern of the mask to the photosensitive substrate.

Abstract: A projection exposure apparatus including an irradiation optical system including a light source and irradiating a mask with irradiation light beams, a projection optical system for projecting an image of a pattern of the mask on a substrate, a plurality of first fly-eye type optical integrators each having an emission side focal plane disposed on a Fourier transformed surface with respect to the pattern of the mask in the irradiation optical system or on a plane adjacent to the same and having a center located at a plurality of positions which are eccentric from the optical axis of the irradiation optical system, a plurality of second fly-eye type optical integrators each having an emission side focal plane disposed on a Fourier transformed plane with respect to the incidental end of each of a plurality of the first fly-eye type optical integrators or on a plane adjacent to the same and being disposed to correspond to a plurality of the first fly-eye type optical integrators, and a light divider for dividing

Abstract: A method for performing optical adjustments of an exposure apparatus is based on an exposure apparatus having a light source for generating illumination light for exposure, and illumination optics for irradiating a mask with the illumination light generated from the exposure light source so as to imprint a mask pattern on a substrate base.

Abstract: A scanning or positioning system with at least two degrees of freedom is provided comprising a supporting base equipped with magnets, a movable platform equipped with at least two electrical coils, and suspension elements providing an elastic connection between the movable platform and the supporting base. The electrical coils are positioned flat on the movable platform, thereby forming an essentially flat arrangement with the movable platform. Combining the flat arrangement with the flat supporting base yields a scanning or positioning system which is potentially compact, lightweight and flat and which features fast response, low power consumption and a relatively large range of motion, e.g. up to 10 mm. The scanning or positioning system with at least two degrees of freedom can be used in the field of scanning probe microscopy or in the field of data storage or imaging.

Abstract: The invention is directed to a projection exposure apparatus for the flat panel display manufacture having an objective array and magnifying objectives (O1 to O5).

Abstract: A method of determining overlay accuracy, using visual inspection, of a first circuit pattern relative to a second circuit pattern. The first circuit pattern and the second circuit pattern are too large to be contained in a single reticle and are formed separately on an integrated circuit wafer and photo stitched together. A first overlay pattern is located adjacent to the first circuit pattern on a mask. A second overlay pattern is located adjacent to the second circuit pattern on a mask, preferably, but not necessarily, the same mask. The first overlay pattern and the second overlay pattern are located so that their images in the layer of developed photoresist will be adjacent to each other after the photoresist is exposed with the first and second circuit patterns and developed. Visual observation of the images of the first and second overlay patterns is then used to determine the overlay accuracy of the first circuit pattern relative to the second circuit pattern.

Abstract: According to one embodiment of the invention, there is provided a method of aligning substrates in an apparatus for bonding a flat panel display device having a plurality of substrates, the method for aligning the substrates involving the steps of providing an optical path through each substrate, wherein alignment of the optical paths corresponds a desired alignment of the substrates. In another aspect, the invention involves the steps of directing a light into the optical path of a first substrate and detecting the light exiting the optical path of a second substrate and positioning the substrates relative to each other such that the amount of detected light is optimized.

Abstract: When an illumination light beam is radiated by an illumination system at a predetermined angle of incidence &thgr; with respect to a pattern plane of a mask, the illumination light beam is reflected by the pattern plane. The reflected light beam is projected by a projection optical system PO onto a substrate, and a pattern in an area on the mask illuminated with the illumination light beam is transferred onto the substrate. During the transfer, a stage control system is operated to synchronously move a mask stage and a substrate stage in the Y direction, while adjusting a relative position of the mask in the Z direction with respect to the projection optical system, on the basis of predetermined adjusting position information.

Abstract: A projection exposure apparatus includes projection optics for projecting a pattern, which has been formed on a mask or reticle, onto a wafer placed on a stage; an XYZ stage on which the substrate is placed and which is movable along the direction of the optic axis of the projection optics and in a direction orthogonal to the direction of the optic axis; a surface position measurement unit capable of measuring a predetermined position along the optic axis of the projection optics and the relative position of the surface of the substrate on the state; and a vibration measurement unit capable of measuring vibration of the projection optics. The XYZ stage is driven and controlled based upon results of measurement from the surface position measurement unit and vibration measurement unit, thereby reducing deviation between the wafer surface and imaging plane and improving contrast and resolving power.

Abstract: The first exposure stage is performed after the numerical aperture NA of a lens and a coherence factor &sgr; have been set at 0.6 and 0.3 respectively, while respective mechanisms for adjusting an illuminating system, a lens system and a stage system have been fixed. Next, the numerical aperture NA of the lens and the coherence factor &sgr; are changed into 0.5 and 0.8 respectively, without shifting the exposure position of a target to be exposed while the illuminating, lens and stage system are adjusted in such a manner that the aberration is minimized under these conditions. Then, the second exposure stage is performed after the mechanisms for adjusting the illuminating, lens and stage system have been fixed. An exposure process is carried out under several combinations of exposure conditions and the illuminating, lens and stage systems are adjusted in accordance with those combinations of exposure conditions.

Abstract: Disclosed is an exposure system having an exposure apparatus for transferring a pattern of a first object onto a second object, which includes an exposure apparatus having a detecting system for performing relative alignment of the first object and the second object, a transmitting system for transmitting, to a remote location and through a public data line, a mark detection signal obtained by detection of a mark of the second object made by use of the detecting system and shape information obtained by measurement of a shape of the mark on the second object, and a calculating system for performing calculation of an offset of the exposure apparatus, at the remote location, wherein the calculating system transmits information, including the offset, to the exposure apparatus and through the public data line, and wherein, on the basis of the information including the offset, alignment of the first and second objects is executed by using the detecting system and an exposure process is performed in the exposure app

Abstract: A method and apparatus for forming an image that is larger than the photoprinting plate by on-the-go formation of web alignment holes in a resist covered web and using the on-the-go web alignment holes to position the photoprinting plates so that a sequence of images can be formed from a single photoprinting plate with the sequence of images laterally positioned so that the images are in lateral registration so that the sequential formed images can appear as a single continuous image.

Abstract: A scanning exposure apparatus which promptly analyzes a cause for a variation in exposure line width. The scanning exposure apparatus includes a mask stage on which a mask is placed, a wafer stage on which a wafer is placed, a focusing mechanism which detects surface position information of the wafer and adjustment means which adjusts the surface position of the wafer. Control means acquires pose information of the wafer adjusted by the adjustment means at the time of exposure and stores the pose information in a memory in association with preacquired surface shape information of an exposure area. A state in which the exposed surface of the wafer has been exposed with respect to exposure light is known from the pose information and the surface shape information.

Abstract: A parameter calculation unit statistically calculates the estimations and their certainty of a predetermined number of parameters, which uniquely specify any position on an object, for each of a plurality of measured sample sets on the basis of position information of marks composing the sample set. A valid value calculation unit calculates statistically valid values of the predetermined number of parameters on the basis of groups of the estimations and their certainty of the predetermined number of parameters for the respective sample sets. Furthermore, an evaluation unit statistically evaluates if the number of marks composing a sample set can be reduced. If it is determined that the number of marks can be reduced, the parameter calculation unit calculates values of the predetermined number of parameters by using a new sample set having reduced number of marks.

Abstract: Disclosed is a scanning exposure method, in which, when a pattern formed on a mask is transferred onto a wafer via an optical projection, the projecting region of the mask is limited by a slit, and the mask and the wafer are scanned in synchronism with the slit fixed so as to transfer the entire pattern region of the mask onto the wafer. In the scanning exposure method of the present invention, the exposure of the entire mask by the scanning of mask and the wafer is carried out twice by changing the exposure conditions. The first exposure and the second exposure are made opposite to each other in the scanning direction of the mask and the wafer so as to improve the pattern transfer accuracy.

Abstract: An exposure apparatus for exposing a substrate to transfer a pattern of an original mask to the substrate includes a detecting unit for detecting a position of a representative point within a representative area in the substrate, a determining unit for determining the positional deviation of each of a plurality of the representative areas from among a plurality of areas in the substrate, based on the detection by the detection unit, a statistical calculation unit for statistically calculating the positional deviation of each area in the substrate, based on the determined positional deviations of the representative areas, a calculating unit for calculating an in-area error in each area, based on the statistically calculated positional deviation of each area, and a correcting unit for correcting the position of the substrate in accordance with the calculated in-area error, to successively process the areas of the substrate.

Abstract: A projection eyepiece and method for aligning pattern areas on a substrate surface having a micro-optical device on an opposite surface side of the substrate is disclosed. The projection eyepiece enables projection of a reticle image onto a first surface of a substrate, enabling receipt of a reflection of that reticle image from a micro-optical device located on a second and opposing surface of the substrate, and enabling comparison of the projected and received image to determine alignment of the point of incidence on the first surface with the micro-optical device of the second surface. The projection eyepiece therefore determines alignment of pattern areas on opposing substrate surfaces by comparing a projected reticle image to a reflection of that projected reticle image.

Abstract: In an apparatus for determining the exposure conditions, a developed pattern is converted into an optical information formed by exposing a plurality of different positions of a substrate at different exposure amounts and focus values to light at a predetermined pattern and developing the pattern thereby to determine the combination of the optimum exposure amount and the optimum focus value from the optical information.

Abstract: The exposure apparatus comprises a projection optical system that has an image field capable of exposing a shot area in a scanning exposure apparatus in one shot. This allows a 1 in 1 exposure, with the shot area being the maximum exposable range of the scanning exposure apparatus. In addition, the main control unit changes the control factor of the exposure system contributing to the throughput, in accordance with the minimum line width of the pattern. The control factor is changed so that the state (or the value) moves into a state where more priority is put on throughput, only when reduction in exposure accuracy is allowed. This makes it possible to improve the throughput while maintaining the exposure accuracy, compared with the case when the exposure system is controlled based on the same value at all times.

Abstract: In the projection exposure apparatus of the present invention, alignment controller selects, from baseline memory, the appropriate baseline amount in correspondence with the insertion, into optical axes and in positional detection optical system, of illumination light limiting member and phase plate. In this way, by using a baseline amount corresponding to a modification of the optical conditions, a desired position on substrate is accurately disposed beneath the projection optical system. Furthermore, even when there are changes in the electrical circuit characteristics of the positional detection optical system as a result of changes in the amplification ratio of the amplifier, the alignment controller conducts processing which is identical to that described above. By means of this, even when the characteristics of the positional detection optical system are changed, the baseline amount corresponding to the changes in characteristics is corrected, and reliable alignment is possible.

Abstract: An exposure apparatus transfers an image of a pattern on a reticle onto a wafer W by synchronously scanning the reticle and the wafer with respect to a projection optical system in a state in which the reticle is illuminated with an exposure light beam from an exposure light source subjected to pulse light emission via a fly's eye lens, a movable blind, a main condenser lens system, and a fixed blind. First and second uneven illuminance-correcting plates, on which shielding line groups for correcting convex and concave uneven illuminance are depicted, are arranged at a position defocused from a conjugate plane with respect to a pattern plane of the reticle. A third correcting plate for roughly correcting uneven illuminance is arranged at a position further defocused therefrom. It is possible to enhance the uniformity of the totalized exposure amount on the wafer or the telecentricity when the exposure is performed in accordance with the scanning exposure system.

Abstract: An aligning method suitably usable in a semiconductor device manufacturing exposure apparatus of step-and-repeat type, for sequentially positioning regions on a wafer to an exposure position. In one preferred form, the marks provided on selected regions of the wafer are detected to obtain corresponding mark signals and then respective positional data related to the positions or positional errors of the selected regions are measured, on the basis of the mark signals. Then, the reliability of each measured positional data of a corresponding selected region is detected, on the basis of the state of a corresponding mark signal or the state of that measured positional data and by using fuzzy reasoning, for example.

Abstract: Random components for each characteristic amount of a paper type to be examined are extracted on the basis of characteristic amounts of the paper type which are read from a plurality of portions on the paper type and reference data previously found with respect to the plurality of portions. Dirt components for each of the plurality of portions on the paper type to be examined are presumed on the basis of the extracted random components for each characteristic amount and a predetermined forecast model of the dirt components. The truth of the paper type to be examined is judged on the basis of the presumed dirt components and the extracted random components.

Abstract: An object of the invention is to provide an illumination apparatus and exposure apparatus and method employing this, whereby the illumination distribution on a mask or wafer can be compensated to a desired distribution, and whereby it is possible to independently alter the pupil shape (coherence factor) of illuminating light in respect of various image heights above the wafer.

Abstract: A scanning or positioning system with at least two degrees of freedom is provided comprising a supporting base equipped with magnets, a movable platform equipped with at least two electrical coils, and suspension elements providing an elastic connection between the movable platform and the supporting base. The electrical coils are positioned flat on the movable platform, thereby forming an essentially flat arrangement with the movable platform. Combining the flat arrangement with the flat supporting base yields a scanning or positioning system which is potentially compact, lightweight and flat and which features fast response, low power consumption and a relatively large range of motion, e.g. up to 10 mm. The scanning or positioning system with at least two degrees of freedom can be used in the field of scanning probe microscopy or in the field of data storage or imaging.

Abstract: A projection exposure apparatus has an illumination optical system for illuminating a mask, on which a predetermined pattern is formed, with light from a light source, a projection optical system for forming an image of the pattern of the mask on a photosensitive substrate, a mask stage for holding the mask and moving the mask within a plane perpendicular to the optical axis of the projection optical system, a substrate stage for moving the photosensitive substrate within a plane conjugate to the plane with respect to the projection optical system, and an imaging characteristic correction system for correcting an imaging characteristic of the projection optical system. The apparatus synchronously moves the mask and the photosensitive substrate along the optical axis of the projection optical system so as to expose the entire pattern surface of the mask.

Abstract: The present invention relates to a detecting apparatus capable of detecting the position of a surface to be examined at higher accuracy and speed. Particularly, the detecting apparatus of the present invention allows a slit image, which is tilted relative to a base pattern on the surface of a substrate, to be applied to the surface of the substrate and its reflection on the surface to be re-imaged and recorded as a two-dimensional image on an image pick-up device. In particular, a row of imaging elements of the image pick-up device aligned in one dimension are arranged with its direction extending at an angle to the lengthwise direction of the two-dimensional image of the slit pattern reflection. Also, the two-dimensional image of the slit pattern reflection is defocused along the lengthwise direction by the action of a specific optics thus to average data of the optical characteristics on the surface of the substrate.

Abstract: A method of detecting a relative positional deviation between first and second objects by use of a first alignment mark provided on the first object and a second alignment mark provided on the second object, wherein the first alignment mark includes a first grating lens and a second grating lens having a mirror image of the first grating lens, wherein the alignment mark includes a third grating lens and a fourth grating lens having a mirror image of the third grating lens. The incidence position information of first light coming via the first grating lens and the third grating lens and incident upon a predetermined plane, and the incidence position of second light coming via the second grating lens and the fourth grating lens and incident upon a predetermined plane, are detected, on the basis of which the relative positional deviation between the first and second objects in a predetermined direction is detected.

Abstract: The invention relates to a process and an apparatus for producing packs, in particular cigarette packs. A change in the type of pack makes it necessary for the operators carefully to provide the correct packaging material assigned to the new type of pack. In practice, this change of material often takes place incorrectly. The invention avoid errors when the type of pack is changed in that markings, which are assigned to packaging material of different designs and are provided on the packaging material and/or the carrier thereof, in particular on a core of the reel, and/or the pack, are used to identify the packaging material and to check it for correct assignment in relation to the type of pack which is to be produced.

Abstract: Optical exposure apparatus and methods of using same, for patterning a workpiece and photo-cleaning the optical components in the apparatus, which can be contaminated by moisture and organic compounds in the atmosphere. The apparatus comprises an illumination optical system having a light source and one or more optical components, and a projection lens having an object plane and an image plane and one or more optical components. The optical exposure apparatus includes an exposure optical path or an exposure light beam through a predetermined space in the optical exposure system. An optical path deflection member for deflecting light is introduced into the exposure optical path so as to create a second optical path that differs from the exposure optical path. Also disclosed is a method of photo-cleaning the aforementioned optical components, including the steps of forming an exposure optical path and then changing this path to create a second optical path that differs from the exposure optical path.

Abstract: Independent of any of several ways used to control exposure for the optical sensor in an optical navigation device, changes in average level of illumination are taken as indicative of changes in exposure. An acceptable exposure level for an optical navigation system is maintained by first establishing an initial operating level of exposure and subsequently adjusting it in proportion to changes in average illumination so long as image contrast remains acceptable. Associated with the initial operating level of exposure is an average level of illumination, which is then noted, and about which is presumed to exist a range of satisfactory operating levels for exposure. The system proceeds to navigate from the current reference frame using this level of exposure. When a new reference frame is established the average level of illumination and the image contrast are checked.

Abstract: The exposure surface of a wafer to be exposed is formed with a wafer mark having edges for scattering incident light. The edge of the wafer mark has a curved portion whose image vertically projected upon a plane in parallel to the exposure surface has a curved shape. The surface of an exposure mask is formed with a mask mark having edges for scattering incident light. The edge of the exposure mask has a curved portion whose image vertically projected upon a plane in parallel to the surface of the exposure mask has a curved shape. The wafer and exposure mask are juxtaposed with and spaced apart by a gap from the exposure surface of the wafer. Illumination light is applied to the curved portions of the edges of the wafer and mask marks. Light scattered from the wafer and mask marks is observed along a direction oblique to the exposure surface to thereby detect a relative position of the wafer and exposure mask.

Abstract: A surface position detecting method wherein an object having a region with a pattern structure is relatively scanned relative to surface position detecting means and wherein surface position at plural detection points in the region is detected by use of the surface position detecting means, the method includes detecting an error in the detection by the surface position detecting means, with respect to each of the detection points, which error may result from a difference in pattern structure among the detection points, detecting, in synchronism with relative position of the object and the surface position detecting means, the surface position at each of the detection points by use of the surface position detecting means, and correcting the detected surface position on the basis of the error.

Abstract: The amount of exposure to a light beam is coarsely adjusted by a coarse adjusting unit which has a wider adjustment range, and finely adjusted by a fine adjusting unit which has a narrower adjustment range but a higher adjustment accuracy. With the coarse and fine adjusting units, the amount of light of the light beam for recording an image can be adjusted to a nicety by a relatively inexpensive arrangement.

Abstract: A surface position detecting method wherein an object having a region with a pattern structure is relatively scanned relative to surface position detecting means and wherein surface position at plural detection points in the region is detected by use of the surface position detecting means, the method includes detecting an error in the detection by the surface position detecting means, with respect to each of the detection points, which error may result from a difference in pattern structure among the detection points, detecting, in synchronism with relative position of the object and the surface position detecting means, the surface position at each of the detection points by use of the surface position detecting means, and correcting the detected surface position on the basis of the error.

Abstract: A method of detecting a relative positional deviation between first and second objects by use of a first alignment mark provided on the first object and a second alignment mark provided on the second object, wherein the first alignment mark includes a first grating lens and a second grating lens having a mirror image of the first grating lens, and the alignment mark includes a third grating lens and a fourth grating lens having a mirror image of the third grating lens. The incidence position information of first light coming via the first grating lens and the third grating lens and incident upon a first predetermined plane, and the incidence position of second light coming via the second grating lens and the fourth grating lens and incident upon a second predetermined plane, are detected, on the basis of which the relative positional deviation between the first and second objects in a predetermined direction is detected.

Abstract: A method of exposure while gradually reducing the exposure at peripheral parts when transferring patterns to a plurality of areas on a substrate where the peripheral parts are partially superposed, including exposing one shot area of the substrate through a density filter set so that the energy at the peripheral parts becomes a predetermined first distribution, measuring the distribution of exposure at portions corresponding to the peripheral parts on the substrate, determining a second distribution where the exposure at the peripheral parts becomes a target value based on the measured distribution of exposure, and exposes the shot areas adjoining the one shot area through a density filter set to give the second distribution.

Abstract: A method of monitoring the conditions of a deep ultraviolet exposure station. In this invention, three usually separate conventional measurements including reticle blind accuracy, pre-alignment accuracy and overlay accuracy are integrated together. A patterned wafer having a photoresist layer thereon is provided. The photoresist layer on the wafer is exposed using a DUV exposure station. Relative positions of various markers are measured using an image-contrasting station. Hence, the reticle blind accuracy, the pre-alignment accuracy and the overlay accuracy are all determined in a single step.

Abstract: An apparatus and method for monitoring the inclination of a wafer residing within a pocket of a semiconductor processing chamber susceptor. The apparatus of the present invention includes a laser beam source that is positioned to direct a laser beam onto the top surface of a wafer that has been positioned within a susceptor pocket. A laser receiver is positioned to detect the laser beam after it has been reflected off the surface of the wafer. The laser receiver emits an output signal to a visual or audible indicator that indicates whether or not the wafer is properly positioned within the pocket of the susceptor.

Abstract: A microlithography projection apparatus comprises an illuminator, for supplying a beam of radiation for illuminating a pattern on a mask, and a projection system for forming an image of the illuminated portion of the mask on a resist-coated substrate. The image is projected off-axis with respect to the optical axis of the projection system and the aperture of the illuminator is minimized to that of the illuminated portion of the mask. The illuminator is provided with a compensator, such as a tiltable mirror or wedge-like transmissive optical element for compensating for telecentricity errors intrinsic to the projection system.

Abstract: A position detection apparatus comprises a radiation source mounted on an isolated reference frame and a two-dimensional detector mounted adjacent said radiation source. The object whose position is to be detected has a retro-reflector mounted on it so as to reflect light emitted from the radiation source along a return path that is parallel to but displaced from the incident light path. The amount of displacement is dependent on the position of the object and is measured by the two-dimensional detector. Three such apparatus can be combined in a system to measure the position of the object in all six degrees of freedom.

Abstract: A system and method electronically determines an edge of a copy substrate to be printed on. A copy substrate is inserted between a linear light source array and a linear sensor array and a light segment of the linear light source array is illuminated. An edge location of a shadow created by the copy substrate intersecting a light path between the illuminated light segment and the linear sensor array is measured, and a location of the edge of the copy substrate is calculated based on the measured shadow location. A second light segment of the linear light source on an opposite side of an expected copy substrate edge position of the light segment can also be illuminated, and a second edge location of a shadow created by the copy substrate intersecting a light path between the illuminated second light segment and the linear sensor array can be measured wherein this second measurement can be used with the first to calculate a location of the edge of the copy substrate.

Abstract: A projection exposure apparatus is able to monitor changes in transmissivity of the projection optical system so as to provide a high degree of control over the exposure illuminance to produce precision printing of circuit patterns on a substrate. A referencing member, having reference marks and a window section for determining the illuminance of the transmitting exposure beam, is provided on the sample stage for the substrate. During scanning/exposure process, any positional deviation of projection optical system is checked by the alignment system by comparing reticle marks on the reticle with reference marks on the sample stage illuminated with alignment beams. Simultaneously, illuminance of exposure light passing through the projection optical system is checked to determine if there is any change in the transmission coefficient of the optical system, and illumination power is adjusted to provide near real-time compensation for any change in transmissivity in the optical system.

Abstract: A scanning exposure system to expose an objective wafer has a light source; a slit-shaped window having a length in a first direction greater than a width in a second direction perpendicular to the first direction; a photomask having an exposure opening therein, the exposure opening having a length along a longer direction greater than a width along a narrower direction perpendicular to the longer direction, the longer direction being aligned parallel to a projection of the first direction on the photomask, the objective wafer being exposed to the light source through the slit-shaped window and the exposure opening during a scanning operation by a relative motion of the photomask with respect to the slit-shaped window in a second direction perpendicular to the first direction.

Abstract: An apparatus for forming a pattern in a photoresist material includes a light source to provide light for illuminating a portion of the photoresist material according to the pattern and a filter positioned in a path of the light. The filter includes a number of regions upon which a filtering material has been. The filtering material has a variable characteristic that is independently adjustable for each region to enhance the uniformity of the intensity of the light. Such characteristics include the thickness of the filtering material, the size of the portion of the region that is covered by the filtering material, or a voltage, current, electric field, or magnetic field applied to the filtering material of each region.

Abstract: Random components for each characteristic amount of a paper type to be examined are extracted on the basis of characteristic amounts of the paper type which are read from a plurality of portions on the paper type and reference data previously found with respect to the plurality of portions. Dirt components for each of the plurality of portions on the paper type to be examined are presumed on the basis of the extracted random components for each characteristic amount and a predetermined forecast model of the dirt components. The truth of the paper type to be examined is judged on the basis of the presumed dirt components and the extracted random components.

Abstract: A projection aligner of the present invention, in which ultraviolet light emitted from a lamp housing is split by a fly-eye lens into a large number of point light sources which are independent of one another. Further, in this projection aligner, the light is shaped by an aperture, so that a secondary light source plane is formed. Moreover, after an exposure area is established by a blind, a photomask is illuminated. Thereafter, an image of a light source is formed on a pupillary surface of a projection optical system from light diffracted by the photomask. Furthermore, a wave front aberration is compensated by an aberration eliminating filter placed on the pupillary surface of the optical system of the projection aligner. Then, the image of a circuit pattern is formed on a wafer. Thereby, the influence of the aberration of the optical system is eliminated. Consequently, the high-accuracy transferring of the pattern can be achieved.

Abstract: The alignment method allows a constant decision of an alignment point even with an indistinct outline of an alignment mark. An operator moves a chip (2) so that the whole or parts of an alignment mark (1) (including at least angles D0A0B0 and A0B0C0) is included within a lens view field (4), and then decides an alignment point (AP0). More specifically, the operator reads angles which are specified to obtain bisectors, from a defect inspection apparatus; obtains respective bisectors of the angles; and decides the intersection thereof to be the alignment point (AP0). Then, a stage drive required to superimpose the alignment point (AP0) on the center (O) is calculated on the basis of the shift amount between the position of the alignment point (AP0) and the center (O) of a target scope (5) displayed at the lens view field (4). The chip (2) is then moved by the stage drive.

Abstract: A projection exposure apparatus comprises a projection optical system for projecting a pattern of a mask on a photosensitive substrate, a stage, for holding the photosensitive substrate, movable in an optical-axis direction of the projection optical system and in a direction perpendicular to the optical axis, a position detection system for outputting a detection signal corresponding to a deviation of the projection optical system in the optical-axis direction between an imaging plane of the projection optical system and the surface of the photosensitive substrate by projecting a beam of light assuming a predetermined shape on the photosensitive substrate and, at the same time, photoelectrically detecting the reflected light from the photosensitive substrate, a fiducial member provided on the stage and having a fiducial pattern assuming a predetermined shape, and a device for detecting an irradiation position of the light beam within a plane perpendicular to the optical axis of the projection optical system o