Abstract: A positioning method and apparatus for positioning a substrate on a substrate stage which is movable in a predetermined direction (Y direction). In the positioning method, a relationship between a longitudinal direction (X′ direction) of a band-shaped light beam irradiated onto the substrate and the predetermined direction (Y direction) for determining the position of the substrate and the predetermined direction is measured and the substrate is positioned on the substrate stage based on the relationship between said longitudinal direction of the band-shaped light beam and the predetermined direction.

Abstract: A reference medium is scanned both with a medium sensor (44) capable of detecting a low-transmittance printing medium with high accuracy and with a medium sensor (45) capable of detecting a high-transmittance medium with low accuracy so as to find edge positions Ry0, Ry1 of the reference medium. The difference Diff0 between the edge positions is calculated and stored as a correction value. If it is hard to detect a printing medium by means of the medium sensor (44), the medium sensor (45) is used to detect the medium, and the resulting edge position is corrected using the correction value Diff0. In addition, for any given printing medium, a first driving level of a light source for outputting a predetermined output amount of the sensor (44) and a second driving level of a light source for outputting a predetermined output amount of the sensor (45) are calculated and, based on the difference between the two driving levels, the type of the printing medium is determined.

Abstract: A wafer supporting plate suitable for supporting a wafer during a semiconductor-forming process. In particular, the present invention relates to a wafer supporting plate capable of sensing the positioning condition of the wafer on the supporting plate during a heat treatment or other semiconductor-forming processes for detecting whether the wafer is being positioned normally on the supporting plate. The wafer supporting plate comprises a supporting plate body, at least three supporting props disposed on the supporting plate body for receiving and supporting a wafer, at least three sensing devices each disposed besides the supporting props and within the range encircled by the supporting props on the supporting plate body respectively.

Abstract: A photolithography apparatus includes a laser beam source, a focusing lens, a detecting unit, and a control unit. The laser beam source emits a laser beam. The focusing lens is disposed in the near field of an exposure surface of an exposure substrate for receiving the laser beam emitted from the laser beam source. The detecting unit detects one linearly polarized component of the laser beam reflected from the distal end surface of the focusing lens. The control unit controls the distance between the distal end surface of the focusing lens and the exposure surface based on a detection signal supplied from the detecting unit.

Abstract: Disclosed is an exposure method, an exposure apparatus and a device manufacturing method, in which transmission factors of almost all optical systems, including a projection optical system, can be measured during an exposure process, and in which the exposure amount is controlled on the basis of it. The exposure apparatus includes an illumination optical system for illuminating a pattern of a reticle with a laser beam from an excimer laser, and a projection lens system for projecting the pattern illuminated by the illumination optical system onto a wafer, to thereby expose the wafer with the reticle pattern, wherein reflection light or ghost light produced at a surface of a lens of the projection lens system is received by a sensor and, on the basis of the an output of the sensor, the transmission factor of the projection lens system is measured. The exposure amount is then controlled on the basis of the measurement.

Abstract: When driving a stage (2), which is guided by an X moving member (3) and a Y moving member (4) that can move in directions perpendicular to each other, respectively, the posture of the Y moving member (4) is controlled on the basis of a signal which controls the posture of the X moving member (3).

Abstract: A method and illumination optical system forms a modified illumination configuration on an optical integrator so that a secondary light source having a desired modified illumination configuration is formed and light loss is minimized. A light beam shape changing element that diffuses illumination in a plurality of directions, and an angular light beam forming element that forms a plurality of light source images operate together to create a modified illumination configuration on the optical integrator. Since the secondary light source has a desired modified illumination configuration, an aperture stop used to restrict the size and/or shape of the secondary light source blocks only a small amount of illumination, or can be eliminated altogether.

Abstract: An exposure apparatus comprising a light source which emits a light including a main light having a wavelength to expose a substrate and a sub light having a different wavelength from that of the main light collaterally generated in accordance with an oscillation of the main light, a main optical system which introduces a light from the light source to the substrate via the mask, a light sensor having sensitivity to a wavelength including the main light, and a separation device disposed on a light path from the light source to the light sensor, the separation device separating the main light and the sub light.

Abstract: A stage device, usable in, e.g., an exposure apparatus, can include an inexpensive passive type vibration control pad system, while avoiding problems such as contact between stationary and movable parts and deterioration of stage control performance. The stage device includes a stage main body that moves on a base, and a support that is vibrationally isolated from the base. A movable part is disposed on the stage main body. A stationary part is supported by the support, the movable part moving relative to the stationary part. A detector detects a size of a gap between the movable part and the stationary part. An actuator adjusts a relative positional relationship between the movable part and the stationary part based on the detected gap size.

Abstract: Disclosed is a scanning exposure method, in which, when a pattern formed on a mask is transferred onto a wafer via an optical projection, the projecting region of the mask is limited by a slit, and the mask and the wafer are scanned in synchronism with the slit fixed so as to transfer the entire pattern region of the mask onto the wafer. In the scanning exposure method of the present invention, the exposure of the entire mask by the scanning of mask and the wafer is carried out twice by changing the exposure conditions. The first exposure and the second exposure are made opposite to each other in the scanning direction of the mask and the wafer so as to improve the pattern transfer accuracy.

Abstract: A surface position detecting method wherein an object having a region with a pattern structure is relatively scanned relative to surface position detecting means and wherein surface position at plural detection points in the region is detected by use of the surface position detecting means, the method includes detecting an error in the detection by the surface position detecting means, with respect to each of the detection points, which error may result from a difference in pattern structure among the detection points, detecting, in synchronism with relative position of the object and the surface position detecting means, the surface position at each of the detection points by use of the surface position detecting means, and correcting the detected surface position on the basis of the error.

Abstract: An optical alignment system is provided for aligning an optical module of the type which is suitable for use in an optical device. The system includes a reference base having a registration feature that aligns with a registration feature of the optical module. An optical sensor senses an optical characteristic of the optical element and optical element manipulator moves the optical element relative to the registration features of the optical module. A controller operates the optical element manipulator.

Abstract: A projection aligner scans a plurality of light beams over a mask in a main scanning direction to transfer an image of a mask pattern on an object by the light beams passed through the mask. The projection aligner has a plurality of optical systems for projecting light beams passed through the mask onto the object. Each of the optical system includes a lens unit, a reflector provided to one side of the lens unit and a deflector provided to the other side of the lens unit. The light beam passed through the mask is deflected by the deflector, passes through the lens unit, reflected back by the reflector, passes through the lens unit again, and deflected by the deflector toward the object. The size of the image formed by the light beam is varied by moving the reflector in the main scanning direction and moving the deflector in a direction perpendicular to the object. The location of the image on the object in the auxiliary direction is adjusted by further moving the reflector in the auxiliary direction.

Abstract: The projection aligner includes a lens unit having an optical axis parallel to a mask, a reflector provided to one side of the lens unit to reflect back light passed therethrough, a light source that emits a light beam toward the object through the mask, and a deflector being inserted in an optical path of the light beam at the other side of the lens unit movably along the optical axis of said lens unit. The deflector has first and second mirrors which are inclined against the optical axis of the lens unit in opposite, directions to each other. The first mirror is arranged to deflect the light beam coming from the mask toward the reflector through the lens unit. The second mirror is arranged to deflect the light beam reflected by the reflector and passed through the lens unit toward the object.

Abstract: An exposure substrate includes a position detection mark having a recessed or projecting portion formed on the substrate with a difference h in depth. The difference h in depth of the recessed or projecting portion is set to (2m+1)&lgr;/4−0.05&lgr;≦h≦(2m+1)&lgr;/4+0.05&lgr; where &lgr; is the wavelength or center wavelength,-in a photoresist, of a monochromatic or quasimonochromatic detection beam to be irradiated on the position detection mark, and m is an integer not less than 0.

Abstract: The correction of improper leveling tilt induced by a leveling sensor of a semiconductor equipment improperly detecting a semiconductor wafer having an asymmetrical semiconductor pattern as out of horizontal is disclosed. The improper leveling tilt is determined, and a corrective leveling tilt is applied to compensate for the improper leveling tilt induced by the leveling sensor. The improper leveling tilt can be determined as the experimentally determined difference in focus between dense features of the asymmetrical pattern divided by the experimentally determined distance between the dense features. The improper leveling tilt can also be modeled as the difference in height between dense features and isolated features of the asymmetrical pattern, times a predetermined parameter, and divided by the field-of-view length of the leveling sensor.

Abstract: The present invention relates to a movement sequence determining method of obtaining a preferred solution of movement sequence within a predetermined time and an apparatus for realizing it so that a movement sequence, indicating a visit order of plural process areas having degrees of freedom in scan directions of local areas being objects of a predetermined process of exposure, inspection, or the like, can be achieved in a shortest time.

Abstract: An exposure method for forming on a wafer coated with a photo resist device patterns comprised of dense patterns and isolated patterns as components, including a first step of transferring first patterns comprised of dense patterns of shapes corresponding to the device patterns and dense patterns formed by patterns of shapes corresponding to the isolated patterns of the device patterns plus a plurality of auxiliary patterns on the wafer by ½ of the appropriate amount of exposure as determined by the sensitivity of the photo resist, and a second step of transferring second patterns comprised of dense patterns of shapes corresponding to the dense patterns of the device patterns and isolated patterns of shapes corresponding to the isolated patterns of the device patterns on the photosensitive substrate by ½ of the appropriate amount of exposure.

Abstract: When scanning exposure is performed by illuminating an illumination area on a mask with a pulse light from a pulse light source, synchronously moving the mask and a photosensitive object, and transferring a pattern of the mask onto the photosensitive object, a main controller performs dose control on a high sensitivity range where scanning velocity of the mask and the photosensitive object is set at a maximum so as to maintain an exposure pulse number at a minimum exposure pulse number. A pulse light source, which pulse energy is variable within a predetermined range, maintains the exposure pulse number at the minimum exposure pulse number within the variable range. The pulse light source comprises a housing in which an outgoing opening that emits a light is formed, a plurality of units housed in the housing, and a drive unit that moves the plurality of units, partially or in total inside the housing.

Abstract: Alignment marks and a method of forming the alignment marks are provided. The method includes the steps of forming a first alignment mark in an alignment mark forming area on the substrate, forming an opaque layer that is opaque to the alignment light above the alignment mark forming area where the first alignment mark is formed, substantially flattening a surface of the opaque layer, and forming a second alignment mark on a side where the alignment light is incident with respect to the flattened opaque layer.

Abstract: An alignment system for aligning a reticle having a pattern and an alignment mark with a photosensitive substrate to which the pattern of the reticle is to be transferred, is disclosed. The alignment system includes a movable substrate stage for holding the substrate, and a light-transparent plate having a mark for relative positioning with respect to at least one of the reticle and the substrate stage, wherein positioning of at least one of the reticle and the substrate stage is performed on the basis of the mark provided on the light-transparent plate.

Abstract: A lithographic projection apparatus including at least one of a radiation system and a projection system having at least one optical member, wherein the optical member is supported by and connected to a mounting frame which at least partially encloses the optical member and which is connected to at least one other component of at least one of the radiation system and the projection system.

Abstract: An exposure method comprising measuring a position distribution, in an optical axis direction of the optical system, on a measurement area surface of the wafer which is not irradiated with the exposure light, computing a tilt component and a curved component of the measurement area surface on the basis of the measured position distribution, obtaining a leveling amount by which the measurement area surface is made to become orthogonal to the optical axis direction, on the basis of the tilt component, obtaining an adjustment amount for an imaging characteristic of the optical system on the basis of the curved component, and irradiating the measurement area with the exposure light on the basis of the obtained leveling amount and adjustment amount while the measurement area surface and the imaging characteristic are adjusted.

Abstract: An optical proximity correction method for producing a rectangular contact. The method includes representing the rectangular contact pattern required by an integrated circuit by a pair of connected hammerhead patterns and serif patterns at the inner straight corners of the hammerhead patterns. By varying the width of the connecting section of the hammerhead patterns, an optimal aspect ratio for the rectangular pattern is obtained.

Abstract: A system that provides a base stabilization system for controlling motion of a controlled structure. The system includes a ground structure such as the floor of a fabrication facility and the controlled structure includes a base on which equipment is mounted. The system also includes at least three air mounts and a plurality of actuators all attached to the ground structure and to the base to isolate the base from the ground structure and to stabilize the base. The system includes a plurality of position and acceleration sensors each of which are co-located with a corresponding actuator. The system also includes a multi-input, multi output feedback control system comprising a computer processor programmed with a feedback control algorithm for controlling each of the actuators based on feedback signals from each of the sensors. The co-location of the sensors with the actuators avoids serious problems resulting from higher order vibration modes.

Abstract: The present invention provides a device for aligning masks in photolithography, wherein in a first mask holder for a first mask at least one adapter for a second mask can be provided, so that masks being adapted to either the first mask holder or to the at least one adapter can be used in the device. The invention is advantageous in that it allows an easy, time and cost saving changeover from one mask size to at least one different mask size.

Abstract: A modified beam splitter that has a hole pattern that is symmetric in one axis and anti-symmetric in the other can be employed in a mask-to-wafer alignment device. The device is particularly suited for rough alignment using visible light. The modified beam splitter transmits and reflects light from a source of electromagnetic radiation and it includes a substrate that has a first surface facing the source of electromagnetic radiation and second surface that is reflective of said electromagnetic radiation. The substrate defines a hole pattern about a central line of the substrate. In operation, an input beam from a camera is directed toward the modified beam splitter and the light from the camera that passes through the holes illuminates the reticle on the wafer. The light beam from the camera also projects an image of a corresponding reticle pattern that is formed on the mask surface of the that is positioned downstream from the camera.

Abstract: An optical system includes multiple cubic crystalline optical elements and one or more polarization rotators in which the crystal lattices of the cubic crystalline optical elements are oriented with respect to each other to reduce the effects otintrinsic birefringence and produce a system with reduced retardance. The optical system may be a refractive or catadioptric system having a high numerical aperture and using light with a wavelength at or below 248 nanometers. The net retardance of the system is less than the sum of the retardance contributions of the respective optical elements. In one embodiment, all cubic crystalline optical elements are oriented with identical three dimensional cubic crystalline lattice directions, a 90° polarization rotator divides the system into front and rear groups such that the net retardance of the front group is balanced by the net retardance of the rear group.

Abstract: Mounting and alignment structures for optical components allow optical components to be connected to an optical bench and then subsequently aligned, i.e., either passively or actively, in a manufacturing or subsequent calibration or recalibration, alignment or realignment processes. The structures comprise quasi-extrusion portions. This portion is “quasi-extrusion” in the sense that it has a substantially constant cross section in a z-axis direction as would be yielded in an extrusion manufacturing process. The structures further comprise at least one base, having a laterally-extending base surface, and an optical component interface. At least one armature connects the optical component interface with the base. In the preferred embodiment, the base surface is securable to an optical bench.

Abstract: An exposure apparatus for use in a photolithographic process, in which an illumination beam is attenuated, split by a beam splitter, and received by an integrator sensor which produces an illuminance detection signal. The illuminance detection signal and a desired illuminance signal from an exposure control system are supplied to a power supply system which powers a mercury-vapor lamp with a predetermined resolution such that the two signals may be equal to each other. The exposure control system determines any error in the illuminance on the wafer from the illuminance detection signal, and supplies a stage control system with correction values for the velocities at which a reticle stage and a wafer stage is to be moved for scanning. The light source may be powered with a constant input power, and an adjustment rod for adjusting the quantity of light of the illumination beam may be disposed in a light travelling region through which the light of the illumination beam from the light source travels.

Abstract: In order to reduce a displacement in position between an under pattern and a resist pattern due to distortion, a reticle (18) formed with reticle alignment marks (32) at at least two points is used, reticle microscopes (34) are respectively placed in association with positions of the reticle alignment marks (32) at the time that the reticle (18) is supported by a reticle stage (20) and rotated about an optical axis (Z axis) of an image-forming optical system (26) by 90°, and the reticle alignment marks (32) are detected by any reticle microscope (34) even if the reticle (18) being supported by the reticle stage (20) is rotated about the Z axis.

Abstract: The invention provides a face position detection method and a face position detection apparatus which can perform detection of the face position of a substrate with high precision, even when a pattern having a large stepped portion is formed by means of a plurality of layers on the surface of the substrate, and an exposure method and an exposure apparatus. Measurement beams S1 to S9 are irradiated onto a plurality of places on the surface of a substrate (object) W using a beam irradiation system (irradiation system) 4, the plurality of measurement beams S1 to S9 from the surface of the substrate W are then detected using a beam reception system (detection system) 5, and face positional information for the surface of the substrate W is obtained based on the detection results for the plurality of measurement beams S1 to S9 using a signal processing unit 41.

Abstract: A imaging tool for use with a mask with features oriented along at least an x-axis or a y-axis where the x-axis extends in directions substantially perpendicular to the directions of the y-axis. The tool has a condenser lens and an objective lens. The condenser lens has a condenser aperture with four-sides and four comers that are located in a condenser lens pupil plane. The sides of the condenser aperture are oriented in substantially the same direction as either the x-axis or the y-axis. The condenser lens is positioned to place at least a portion of any illumination on the mask and then into an objective lens pupil plane of the objective lens. At least one of the comers of the condenser aperture in the condenser plate may have a substantially rounded shape. Additionally, the mask may have at least one artifact added to at least one comer of the features for optical proximity correction.

Abstract: Methods and apparatus for alignment of masks and wafers in charged-particle-beam (CPB) pattern-transfer use optical position sensors to determine the positions of a mask or a mask stage with respect to an axis of a CPB optical system. The optical position sensor uses optical reference marks provided on the mask or mask stage. Determination of the position of the mask of the mask stage permits a coarse alignment of the mask or the mask stage. CPB reference marks are provided on masks, mask stages, wafers, and wafer stages, permitting alignment of the mask stage or the mask with respect to the wafer stage or wafer, respectively, using the charged particle beam. The charged particle beam is scanned with respect to the wafer or wafer-stage CPB reference marks to determine a deflection corresponding to an alignment of the CPB reference marks of the mask and wafer (or mask stage and wafer stage). Use of the charged particle beam for such alignment permits a fine alignment.

Abstract: Disclosed is a step-and-scan exposure method improved in exposure at a periphery of a wafer. An area illuminated by an exposure beam is made to relatively scan a shot area positioned at the wafer periphery from the outside of the wafer to the inside. Predetermined measurement points of a sensor for detecting positional information of a wafer with respect to a focal position of a projection optical system in the direction of the optical axis of the projection optical system are made to relatively scan along with the illumination area of the exposure beam. Focus control is performed to make the wafer move in the direction of the optical axis when only part of the selected predetermined measurement positions reach the wafer, and leveling control is performed in addition to adjust the tilt of the wafer when all of the selected predetermined measurement positions reach the wafer.

Abstract: A measurement tool connects to an automatic inspection machine for measuring microscopic characteristics of features on a photographic mask. Widths of densely packed lines are measured for features having sizes of less than about the wavelength of the examining radiation. A simulated intensity profile is subtracted from the actual measured intensity profile to obtain an error profile. The error profile provides edge position corrections which adjust the originally estimated edge positions. A new, simulated intensity profile is created and the process is repeated until the error profile is deemed acceptable. The line width is measured by measuring between the estimated edge positions. The opacity of a feature is determined and used for correcting dimension measurements. A formula determines the opacity based upon the contrast, the measured dimension and the single data point. Width or height of an irregular feature is calculated accurately.

Abstract: A semiconductor body having an alignment mark comprising a pair of sets of parallel lines disposed on the semiconductor body, the parallel lines in one of the sets being disposed orthogonal to the parallel lines in the other one of the set, the two sets of parallel lines being in an overlaying relationship. Also, a method and apparatus for detecting an alignment mark on a semiconductor body. The method and apparatus provide an alignment illumination comprising a pair of orthogonal, lines of impinging light which is scanned over the surface of the alignment mark, one of such pair of impinging light lines being orthogonal to, and laterally displaced from, the other one of such pair of impinging light lines, impinging light being reflected by the alignment lines in the surface of the semiconductor when such impinging light is over to provide a pair of laterally displaced beams of reflected light.

Abstract: An adjusting method capable of accurately forming a mark for measuring optical characteristics of an optical system, such as an alignment sensor of an exposure system to be used in manufacturing semiconductor devices or the like and correcting an aberration or the like of the optical system with a high precision. A first mark (DM1) having a recess pattern (31a) with a width a provided at a pitch P in a measuring direction and a second mark (DM2) having a recess pattern (32a) with a width c provided at a pitch P have been formed in the vicinity of each other on a wafer (11) for adjustment, and the duty ratio (=a/P) of the recess pattern (31a) of the first mark and the duty ratio (=c/P) of the recess pattern (32a) of the second mark are different. The distance of the images of the two marks (DM1, DM2) is measured, an error in this measured value with respect to a designed value is determined, and the detecting optical system is adjusted in such a way as to reduce this error.

Abstract: A position measuring method for measuring a position of a mark formed on an object, includes detecting a mark waveform obtainable from the mark, acquiring a difference between the detected mark waveform and a reference waveform, correcting at least one of the mark waveform and the reference waveform on the basis of the acquired difference, and determining the position of the mark on the basis of (i) the corrected mark waveform and the reference waveform, (ii) the mark waveform and the corrected reference waveform, or (iii) the corrected waveform and the corrected reference waveform.

Abstract: A scanning exposure apparatus which promptly analyzes a cause for a variation in exposure line width. The scanning exposure apparatus includes a mask stage on which a mask is placed, a wafer stage on which a wafer is placed, a focusing mechanism which detects surface position information of the wafer and adjustment means which adjusts the surface position of the wafer. Control means acquires pose information of the wafer adjusted by the adjustment means at the time of exposure and stores the pose information in a memory in association with preacquired surface shape information of an exposure area. A state in which the exposed surface of the wafer has been exposed with respect to exposure light is known from the pose information and the surface shape information.

Abstract: A position detecting method for detecting a position of a surface of an object. The method includes a first step for detecting registration of the object surface with a predetermined plane with respect to a first direction, while changing the position of the object surface in a direction intersecting with the first direction, a second step for detecting the position of the object surface in the first direction, and determining a detection value in the second detecting step, corresponding to the predetermined plane, by use of an error in the result of the detection made with reference to the predetermined plane, which error is attributable to a difference in the detection position along a direction intersecting with the first direction and upon the same object surface in the first and second detecting steps.

Abstract: A lithographic apparatus includes a support that provides a magnetic force in a first direction between a first part and a second part of the apparatus. The support comprises first, second and third magnet assemblies, the first and third magnet assemblies attached to the first part and each including at least one magnet oriented such that its magnetic polarization is substantially parallel or anti-parallel to the support direction. The first and third magnet assemblies define a space between them in a second direction that is substantially perpendicular to the first direction. The second magnet assembly is attached to the second part and includes at least one magnet. The second magnet assembly is at least partly located in the space. The at least one magnet of the second magnet assembly has its magnetic polarization oriented so as to produce a bias force substantially along the support direction by magnetic interaction between the first, second and third magnet assemblies.

Abstract: A method of determining aberration of a projection system according to one embodiment of the invention includes using a test pattern to pattern a projection beam of radiation, using the projection system to project the patterned beam, and directly measuring an aerial image of the test pattern as formed by the projection system. The test pattern includes a two-dimensional lattice comprising a plurality of unit cells, each unit cell including at least three isolated areas. At least one of a transmissivity, a reflectivity, and a phase-shifting property of the isolated areas is substantially different from that of a remainder of the area of the unit cell.

Abstract: A system that provides a base stabilization system for controlling motion of a controlled structure. The system includes a ground structure such as the floor of a fabrication facility and the controlled structure includes a base on which equipment is mounted. The system also includes at least three air mounts and a plurality of actuators all attached to the ground structure and to the base to isolate the base from the ground structure and to stabilize the base. The system includes a plurality of position and acceleration sensors each of which are co-located with a corresponding actuator. The system also includes a multi-input, multi output feedback control system comprising a computer processor programmed with a feedback control algorithm for controlling each of the actuators based on feedback signals from each of the sensors. The co-location of the sensors with the actuators avoids serious problems resulting from higher order vibration modes.

Abstract: An exposure apparatus and method to expose an object with an illumination beam irradiated on a mask from a light source disposes an optical unit between the light source and an optical integrator of an illumination optical system to illuminate the mask with an illumination beam, of which an intensity distribution on a Fourier transform plane with respect to a pattern on the mask has an increased intensity portion apart from the optical axis relative to a portion of the intensity distribution on the optical axis.

Abstract: Disclosed is a method, system, and lense system for performing lithography on a substrate. The system includes a unique lense system for nonplanar substrates. The lense system includes a first lense section for receiving a pattern and producing a concave image of the pattern. The concave image can the be received by a second lense section for producing a nonplanar image of the pattern. The system also includes two light sources and a digital imaging device for projecting and exposing the pattern through the lense section and onto the substrate. Light from the first light source is used for exposing the pattern while light from second light source is used for receiving an alignment image. An image sensor, using the light from the second light source, detects an alignment image from the substrate. The alignment image is used to accommodate the projection of the pattern onto the substrate so that the pattern is properly aligned to the substrate.

Abstract: An air shower head of an exposure device of photolithography equipment is free of chemical substances that could otherwise contaminate a photoresist layer on a semiconductor wafer and degrade the profile of the photoresist pattern. The air shower head is interposed between a lens system of the exposure device and a wafer stage, and has a hole in the middle thereof through which exposure light can pass to a wafer supported on the stage. The air shower head includes an upper frame defining a cavity open at the bottom thereof, and a porous bottom member covering the bottom of the upper frame. The porous member is mechanically secured to bottom ends of both the inner and outer side walls of the upper frame, i.e., without the use of chemical binders, to reduce the ability of the air shower head to serve as a source of contamination.

Abstract: A projection aligner of the present invention, in which ultraviolet light emitted from a lamp housing is split by a fly-eye lens into a large number of point light sources which are independent of one another. Further, in this projection aligner, the light is shaped by an aperture, so that a secondary light source plane is formed. Moreover, after an exposure area is established by a blind, a photomask is illuminated. Thereafter, an image of a light source is formed on a pupillary surface of a projection optical system from light diffracted by the photomask. Furthermore, a wave front aberration is compensated by an aberration eliminating filter placed on the pupillary surface of the optical system of the projection aligner. Then, the image of a circuit pattern is formed on a wafer. Thereby, the influence of the aberration of the optical system is eliminated. Consequently, the high-accuracy transferring of the pattern can be achieved.

Abstract: A projection exposure apparatus for exposing a photosensitive substrate with a pattern on a circular mask by projection through a projection optical system. The apparatus includes a prealignment stage for previously correcting an error of the circular mask in its rotational direction, and a transport arm and a rotatable arm for transporting the circular mask from the prealignment stage to a mask stage. The prealignment stage includes an optical detecting system for detecting the rotational error of the circular mask from a predetermined orientation on the prealignment stage, a rotatable stage for rotating the circular mask on the prealignment stage, and a unit for controlling the rotatable stage on the basis of the rotational error so that the circular mask has the predetermined orientation. Orientational adjustment can be previously performed before importing the circular mask to the mask stage of the projection exposure apparatus.

Abstract: An exposure apparatus includes a condensing optical system for condensing light from a light source to a specified plane, an imaging optical system for imaging the light in the specified plane onto a reticle or a mask or near the reticle or mask, a projection optical system for projecting a pattern on the reticle or the mask onto an object to be exposed; and