Abstract: The present invention provides methods and systems for aligning detection optics with a device by obtaining an optical profile of the system and comparing it with a preprogrammed layout of the various optical features of the device. The invention also provides methods of identifying devices by comparing the optical profile with a library of preprogrammed optical profiles of multiple devices.

Abstract: An exposure apparatus and an exposure method that minimize the range over which exposing light becomes defocused even when a non-level portion is present within each shot are provided. One shot is selected from a plurality of shots (exposure unit areas) set on a wafer (S 50). 49 measurement points are set in the selected shot and the three-dimensional coordinates of each measurement point are determined (S 70). Next, an arithmetic operation is performed using the 49 sets of three-dimensional coordinate data to ascertain an “in-shot focus plane” (S 90). This arithmetic operation may be performed through, for instance, the method of least squares. The extents of positional deviation between the surface of the selected shot and the in-shot focus plane is ascertained and the extents of deviation are stored in memory as “adjustment values” (S 110). An exposure shot to undergo exposure processing is selected and the surface level variation manifesting at the exposure shot is measured.

Abstract: A CO2 laser beam 12 is converted into a beam of uniform intensity at the position of a phase matching element 15 by an intensity converting element 14 and the phase matching element 15. Then, the uniform intensity beam irradiates a mask 17 containing an aperture variable in size via a variable-magnification projecting optical system 16. At the time of irradiation, the laser beam at the position of the phase matching element 15 is projected onto the mask 17 at a magnification factor most suited to the size of the aperture formed in the mask 17. Further, the pattern of the mask 17 is projected onto a workpiece 19. Thus, a uniform intensity distribution of the laser beam is obtained on the workpiece and high quality laser processing becomes possible.

Abstract: The invention relates to a lighting system for a projection lighting system that comprises: a light source (1) that emits light of wavelengths of ≦193 nm, especially wavelengths between 10 nm and 20 nm; a collector unit (30, 32) for illuminating a mirror device that produces secondary light sources (14), said mirror device comprising at least one mirror (34) that is subdivided into grid elements (10, 40, 42, 100, 102); a diaphragm plane (16); one or more optical elements (36, 38) that represent the diaphragm plane (16) in the exit pupil (390) of the lighting system; an object plane (39) in which the images of the grid elements are substantially in line and illuminate a predetermined filed with an intensity distribution; an optical element (30, 310, 320, 330) that produces an intensity distribution in the exit pupil (390) that is defined by the kind and/or filling degree, said kind and/or filling degree of the intensity distribution being modifiable buy exchanging, displacing or deforming the optical elemen

Abstract: A projection exposure method and apparatus, in which a substrate, which is placed on a stage that is movable in a direction of an optical axis of a projection optical system or in a direction perpendicular thereto, is moved in the direction perpendicular to the optical axis of the projection optical system in order to successively move and position a plurality of exposure areas on the substrate to respective predetermined exposure locations. Then, the amount of displacement of each of the exposure areas of the substrate surface from an optimal image forming location of the projection optical system is measured. The substrate surface, based on the measured values, is moved for alignment with the optimal image forming location. Thereafter, the substrate surface is exposed.

Abstract: An illumination apparatus includes an optical integrator for illuminating a target plane by using light emitted from a light source, the illumination apparatus forming an approximately rectangular illuminated area by using light emitted from the optical integrator that includes a first optical system for enlarging the beam in a longitudinal direction of the illuminated area, and a second optical system for enlarging the beam in a lateral direction of the illuminated area, wherein a light exit plane of the first optical system is provided closer to the target plane than that of the second optical system.

Abstract: There is disclosed an exposure method for transferring, using an optical system for illuminating a mask having patterns to be transferred on a substrate and a projection optical system for projecting images of the patterns to the substrate, the patterns to the substrate through the projection optical system by means of scanning the mask and the substrate synchronously relative to the projection optical system. The method comprises the steps of providing a plurality of measuring marks on the mask formed along a relative scanning direction, and providing a plurality of reference marks formed on the stage corresponding to the measuring marks, respectively, moving the mask and the substrate synchronously in the relative scanning direction to measure successively a displacement amount between the measuring marks on the mask and the reference marks, and obtaining a correspondence relation between a coordinate system on the mask and a coordinate system on the stage according to the displacement amount.

Abstract: A disclosed exposure apparatus has a projection optical system, an illumination system including a light source and adapted to send exposure illumination light to the projection optical system, and a substrate stage for supporting a sensitive substrate so that the sensitive substrate is exposed by the illumination light passed through the projection optical system. A shot area of the illumination light is formed on a plane corresponding to a top surface of the sensitive substrate.

Abstract: An exposure apparatus includes a projection optical system for projecting exposure light, with which a reticle formed with a pattern is irradiated, onto a wafer, a stage for holding and aligning the wafer or reticle, an alignment optical system for outputting alignment light, a reflection mirror provided on the stage, and a plurality of interferometers for measuring the position of the stage by irradiating the reflection mirror with measurement light. The interferometer to be used to measure the position of the stage in a predetermined direction is switched to another in accordance with whether the stage is aligned to the projection optical system or to the alignment optical system.

Abstract: An embodiment of the present invention employs a combination of techniques for facilitating correction of chromatic aberration in the context of a projection optical system comprising one or more refractive optical members collectively comprising two or more fluoride substances. As one such technique, a projection exposure system comprises at least two refractive optical members collectively comprising at least a first fluoride substance and a second fluoride substance, wherein MX1 is greater than MX2 and the design condition 0.4< 1 0.4 < MX 2 MX 1 < 0.

Abstract: A closed loop selective deposition modeling apparatus having a surface scanning system for actively monitoring the surface height of a layer of a three-dimensional object as it is being built by selectively dispensing a build material. The surface scanning system directs a beam of energy on the surface of the object that establishes an illumination zone which emits scattered light, and has a detector which senses the scattered light and produces a response indicative of the surface condition of the object. The response is processed to establish a plurality of height data signals that are further processed to produce feedback data. The feedback data is then utilized to selectively dispense the build material to desired locations on the surface of the object to therein dimensionally normalize the layer of the object being formed.

Abstract: Transmittances of the optical system are calculated and a predicitive line of time-varying transmittance is calculated. When the exposure is started, the transmittance of the optical system is calculated at the elapsed time of exposure based on the predictive line of time-varying transmittance, and the intensity of exposure light is controlled The illuminance on the wafer can be compensated for depending on the actual variation of the transmittance. The accumulated quantity of exposure light incident to the wafer is regulated to ensure a target exposure dose of the wafer regardless of the variation in the transmittance of an illumination optical system or a projection optical system during exposure.

Abstract: An exposure system having an exposure apparatus for transferring a pattern of a first object onto a second object, which includes an exposure apparatus having a detecting system for performing relative alignment of the first object and the second object, a transmitting system for transmitting, to a remote location and through a public data line, a mark detection signal obtained by detection of a mark of the second object made by use of the detecting system and shape information obtained by measurement of a shape of the mark on the second object, and a calculating system for performing calculation of an offset of the exposure apparatus, at the remote location. The calculating system transmits information, including the offset, to the exposure apparatus and through the public data line, and, on the basis of the information including the offset, alignment of the first and second objects is executed by using the detecting system and an exposure process is performed in the exposure apparatus.

Abstract: An apparatus for adjusting curvature of a disc head slider having a bearing surface is provided. The apparatus includes a light source and an apparatus for controlling the light source. The light source is adapted to produce a light beam capable of altering material stresses in a working surface of the slider. The apparatus for controlling the light source is adapted for obtaining a measure of first and second curvature characteristics of the bearing surface and for scanning the light beam across the working surface in a pattern to alter the material stresses in the working surface such that the first and second curvature characteristics move to within predetermined specifications. The pattern is based on the measures of the first and second curvature characteristics and estimates of responses in the first and second curvature characteristics to the pattern.

Abstract: A reticle stage reference mark 3 of material having high reflectivity to alignment illumination light is provided on a reticle 5, and a chuck mark 8 of material having high reflectivity to the alignment illumination light is provided on a wafer chuck 11. A relative position of the reticle stage reference mark 3 to the chuck mark 8 is detected by using a first position detection optical system 1 and a first illumination optical system 2, and relative alignment is performed between the reticle 5 and a wafer 10.

Abstract: A dynamic mask exposure system includes a support, a source of a beam, and a transmissive dynamic phase-shifting mask with orthogonally arranged matrices of actuator lines and binary pixel units which are opaque or transparent as a function of control inputs to the actuator lines. A control system is connected to supply pixel control signals to the actuator lines of the mask to form a pattern of transparent regions and opaque regions. The beam is directed onto the mask. A pattern detection element is located on the support. The beam passes through the transparent regions and projects a pattern from the mask onto the support or onto the image detection element. Where the image detection element is the target, there are means for providing signals representing the pattern to the control system.

Abstract: A predetermined wafer (5) is exposed with the first exposure layout by using a projection optical system (4) for projecting the pattern of a reticle (2) onto the wafer, an illumination device (10) and light-receiving device (11) for detecting a plurality of plane positions on the wafer (5), and a driving unit for driving the wafer (5) along the optical axis of the projection optical system (4). Prior to the second exposure with the second exposure layout at the second exposure field size, a position where a plane position is to be detected is determined on the basis of at least one of the first exposure field size, the first exposure layout, and underlayer information of the first exposure. Then, the plane position is detected.

Abstract: An illumination device emits detection light toward the surface of a substrate from an oblique direction with respect to the substrate. The detection light is shaped into a slit beam by an optical shaper. An alteration device changes the width of the slit beam by controlling the optical shaper. The slit beam strikes the surface of the substrate through an optical element. The slit beam reflected from the surface of the substrate is oscillated along the width direction of the slit by a controlled oscillation mirror. A detector detects the surface height of the substrate based on the oscillating slit beam.

Abstract: A device (70) is disclosed for adjusting a light beam (1) in an optical system (100), whereby the optical system (100) defines an optical axis (60). The device (70) for adjusting comprises means for coupling-in (3) of the light beam into a housing part (80) of the device (70). The means for coupling-in (3) determines a coupling-in point (3a) and a coupled in light beam (9). At a least first and a second photo detector (10, 22) are arranged in different in distances to the coupling-in point (3a). In the coupled in light beam (9) at least one beam splitter (36) is provided, which directs the coupled in light beam (9) on at least one of the photo detectors (10, 22).

Abstract: An optical proximity correction method for producing a rectangular contact. The method includes representing the rectangular contact pattern required by an integrated circuit by a pair of connected hammerhead patterns and serif patterns at the inner straight corners of the hammerhead patterns. By varying the width of the connecting section of the hammerhead patterns, an optimal aspect ratio for the rectangular pattern is obtained.

Abstract: An illumination optical system is revolved at a given speed around a rotation shaft and emanates exposure light onto a reticle. The light having passed through the reticle is projected onto a semiconductor substrate, by means of a projection optical system which is revolved around the rotation shaft such that a relative positional relationship between the illumination optical system and the projection optical system is maintained.

Abstract: A scanning exposure apparatus in which a mask and a substrate are moved in a first direction while images of patterns of the mask are exposed onto the substrate includes at least a pair of projection optical systems that are spaced from each other in the first direction by a predetermined distance. The pair of projection optical systems also are displaced from each other in a second direction that is perpendicular to the first direction such that at least portions of projection areas where the images of the pattern are projected by the pair of projection optical systems onto the substrate overlap each other. The scanning exposure apparatus also includes a shifter that shifts the images of the overlapping projection areas on the substrate in the second direction. This enables the measurement of the flatness tolerance of long planar mirrors that are used in controlling the positions of the mask and the substrate to be easily made.

Abstract: A scanning exposure apparatus which promptly analyzes a cause for a variation in exposure line width. The scanning exposure apparatus includes a mask stage on which a mask is placed, a wafer stage on which a wafer is placed, a focusing mechanism which detects surface position information of the water and adjustment means which adjusts the surface position of the wafer. Control means acquires pose information of the wafer adjusted by the adjustment means at the time of exposure and stores the pose information in a memory in association with preacquired surface shape information of an exposure area. A state in which the exposed surface of the wafer has been exposed with respect to exposure light is known from the pose information and the surface shape information.

Abstract: A scan type projection exposure apparatus which includes an illumination optical system for forming a slit-shaped illumination area on a pattern on a mask by using illuminating light, and a projection optical system for forming an image of a portion of the pattern in the illumination area on a substrate, includes: a mask stage which moves at least in one direction while holding the mask; a substrate stage which moves two-dimensionally while holding the substrate; a control system for synchronously scanning the mask stage and the substrate stage; and an image forming performance adjusting system for adjusting image forming performance of the projection optical system and having a component placed in an area through which the illuminating light incident from the illumination area on the mask to the projection optical system does not pass.

Abstract: A masking aperture for a photomask illumination system provides controlled on-axis and off-axis illumination. The masking aperture has a dithered pattern of pixels. The intensity of the pattern controls the illumination of the photomask. The masking aperture pattern defines one or more zones of illumination. Zones comprise elements that are patterned in accordance with a selected wavelength of incident light to diffract the incident light into an illumination pattern for illuminating a photomask. Each of the elements is constructed with a matrix of pixels. In the preferred embodiment the array of pixels is 8×8. The number of elements is generally greater than 3×3.

Abstract: This invention provides a scanning exposure apparatus capable of increasing the overlay accuracy. Every time a reticle is exchanged, a direction overlay correction table is updated. A control device for the exposure apparatus corrects the target positions (target locus) of a wafer stage on the basis of the direction overlay correction table.

Abstract: An exposure apparatus (PE1) and exposure method for use in photolithographically manufacturing devices such as semiconductor devices, image pickup devices, liquid crystal display devices and thin film magnetic heads. The apparatus is capable of transferring onto a substrate (W) the image of a pattern on a reticle (R) and includes a light source (2) capable of supplying an exposure energy beam (IL) with a wavelength under 200 nm, and an illumination optical system arranged to receive the exposure energy beam from said light source. The illumination optical system is designed to guide the exposure energy beam to the reticle. The apparatus also includes a projection optical system (PL) arranged between the reticle and the substrate. The projection optical system is capable of forming an image of the reticle pattern onto the substrate based on the exposure energy beam passing through the reticle.

Abstract: For a photolithography apparatus, an adjustment method is provided which comprises first and second processes. In the first process, a semiconductor wafer is successively set in one of cell positions. In each of the cell positions, a laser beam is directed to the surface of the wafer and light reflecting off the wafer surface is detected and analyzed to determine a vertical offset position of the wafer at each cell position. Data representing the vertical offset position is stored in a memory and the first process is repeated until the offset position data are derived from all cell positions. In the second process, tilt angles of the wafer at all cell positions are determined from the stored offset position data, and angle data representing the determined tilt angles are stored in a memory. The wafer is then set in one of the cell positions, and the angle data is read from the memory corresponding to the set cell position and the wafer surface is horizontally aligned.

Abstract: A focussing method and system transmits a light for measuring a focus to a semiconductor wafer at a fixed incident angle having high reflectance and detects a light reflected at a surface of a photoresist layer on the semiconductor wafer. The light is transmitted at an incident angle such that the amount of light reflected from the surface of the photoresist layer is larger than the amount of light which penetrates the surface thereof. The reflected light is detected, and the position of the semiconductor wafer is controlled in response to the amount of light detected. The focussing system has a source part, a detection part, and a control part. The source part creates the light and then transmits the light to the surface of the photoresist layer. The detection part detects the amount of reflected light and generates a detection signal corresponding thereto. The control part controls the position of the semiconductor wafer in response to the detection signal generated at the detection part.

Abstract: An optical testing apparatus for measuring the transmission characteristics of a DWDM filter. A first opto-mechanical lens assembly comprises a light emitter and a first optical axis which is angularly adjustable via a spherically shaped bearing surface pivoting about a specified first fixed point. A second opto-mechanical lens assembly comprises a light collector and a second optical axis which is also angularly adjustable via a spherically shaped bearing surface pivoting about a specified second fixed point whereby the second optical axis is positioned coaxially with respect to the first optical axis. The first optical axis and the second optical axis are coaxially aligned passing through a center of the DWDM filter positioned on a platen.

Abstract: An apparatus and method for adjusting curvature of a disc head slider having a bearing surface is provided. The apparatus includes a light source and an apparatus for controlling the light source. The light source is adapted to produce a light beam capable of altering material stresses in a working surface of the slider. The apparatus for controlling the light source is adapted for obtaining a measure of first and second curvature characteristics of the bearing surface and for scanning the light beam across the working surface in a pattern to alter the material stresses in the working surface such that the first and second curvature characteristics move to within predetermined specifications. The pattern is based on the measures of the first and second curvature characteristics and estimates of responses in the first and second curvature characteristics to the pattern.

Abstract: A positioning method and apparatus for positioning a substrate on a substrate stage which is movable in a predetermined direction (Y direction). According to the positioning method of the invention, a relationship between a longitudinal direction (X′ direction) of a band-shaped light beam irradiated onto the substrate and the predetermined direction (Y direction) to detect the position of the substrate in said predetermined direction is measured and the substrate on the substrate stage based on the relationship between said longitudinal direction of said band-shaped light beam and said predetermined direction is positioned.

Abstract: Exposure method and scanning-type exposure apparatus expose a substrate with a pattern formed on a mask by synchronously moving the mask and the substrate. The exposure apparatus comprises a detection device and a correction mechanism. The detection device detects a change in a shape of the substrate. The correction mechanism approximates at least two straight lines or curves in accordance with the result of the detection by the detection device to correct the relative position of the mask and the substrate during the synchronous movements.

Abstract: A method is described for exposing both sides of a light sensitive sheet such as a printed circuit board panel according to imaging data. The method uses a device that has an optical system for scanning the sensitive sheet by one or more beams. The optical system scans both sides with the scan lines on one side mutually positioned with respect to the scan lines on the other side. According to one implementation, the optical system includes two optical scanning units driven by a single source, with a switch alternating the beam from the source to one then the other optical scanning unit.

Abstract: An projection exposure apparatus and method for illuminating a transfer pattern and forming an image upon a mask for exposure from the illumination light and transfer exposing the image of the pattern of the mask under the illumination light. Switching is performed between a normal illumination condition and a modified illumination condition based upon the numerical aperture of the illumination light; wherein the normal illumination condition occurs when the light quantity distribution at the illumination pupil plane is in a first region, including the optical-axis; and the modified illumination condition occurs when the light quantity distribution at the illumination pupil plane is in a second region, not including the optical-axis and wherein the pupil plane is an optical Fourier conversion surface of a pattern surface of the mask in an illumination system.

Abstract: An illumination apparatus includes an inner-surface reflecting type integrator, an optical system for directing a beam from a light source to a portion of incidence of the inner-surface reflecting type integrator, an wave-front splitting type integrator, an image-forming optical system for arranging the portion of incidence of the inner-surface reflecting type integrator approximately conjugate with a portion of incidence of the wave-front splitting type integrator, and for directing a beam from the beam mixer to the wave-front splitting type integrator, and an irradiating optical system for superimposing multiple beams from the wave-front splitting type integrator on a plane to be irradiated, wherein a stop is provided at or near the portion of exit of the inner-surface reflecting type integrator.

Abstract: A lithographic projection apparatus is provided with an optical system built into the wafer table for producing an image of a wafer mark that is provided on the back side of the wafer. The image is located at the plane of the front side of the wafer and can be viewed by an alignment system from the front side of the wafer.

Abstract: In one example embodiment, a method of forming a pattern in a photoresist material includes illuminating a portion of the photoresist material according to the pattern and positioning a filter in a path of the light. The filter includes a number of regions upon which a filtering material has been. The filtering material has a variable characteristic that is independently adjustable for each region to enhance the uniformity of the intensity of the light. Such characteristics include the thickness of the filtering material, the size of the portion of the region that is covered by the filtering material, or a voltage, current, electric field, or magnetic field applied to the filtering material of each region.

Abstract: A fabrication method for a projection optical system is capable of easily determining the corrected surface form as a desired continuous surface provided to a correcting member for correcting residual aberration. The fabrication includes: a measurement step of measuring aberration remaining in the projection optical system; a hypothesis step of hypothesizing a corrected surface form to be provided to the correcting member based on predetermined functions; a calculation step of calculating wavefront information of a light beam which passes through each of a plurality of regions on the correcting member having the corrected surface form hypothesized in the hypothesis step; and an evaluation step of evaluating the remaining aberration in the projection optical system when the hypothesized corrected surface form hypothesized in the hypothesis step is provided to the correcting member based on the measurement result in the measurement step and on the wavefront information calculated in the calculation step.

Abstract: A position detection device for detecting position information of a photosensitive substrate when performing projection exposure of a pattern on a surface of an object onto the photosensitive substrate, via a projection optical system, by scanning the pattern includes a device for detecting the position information within a shot region of the photosensitive substrate in the projection optical system, and a device for causing the detection device to detect the position information at a plurality of points arranged so that a first end of the plurality of points coincides with a position to start a scanning exposure and a second end of the plurality of points coincides with a position to end the scanning exposure, in accordance with a size of the shot region.

Abstract: A method for scaling a pixel location in a digital photolithography system by rotating a pixel panel is provided. The method determines the angle of rotation of the pixel panel relative to a subject and calculates the original location of the pixel to be scaled. The method calculates the desired location of the pixel and determines the angle through which the pixel panel should be rotated to align the pixel with the desired location in a first dimension. The scan rate of the pixel panel and the subject is altered to align the pixel with the desired location in a second dimension.

Abstract: A surface position detection apparatus of this invention includes a position detection section having a plurality of electrodes opposing the object surface to be measured, and a measurement device for selecting at least one electrode of the plurality of electrodes in accordance with the shape of the object surface, supplying an AC current to the selected electrode, and measuring the current flowing to the electrode, thereby measuring the distance between the electrode and object surface.

Abstract: A method of detecting aberrations associated with a projection lens utilized in an optical lithography system. The method includes the steps of forming a mask for transferring a lithographic pattern onto a substrate, forming a plurality of non-resolvable features disposed on the mask, where the plurality of non-resolvable features are arranged so as to form a predetermined pattern on the substrate, exposing the mask using an optical exposure tool so as to print the mask on the substrate, and analyzing the position of the predetermined pattern formed on the substrate and the position of the plurality of non-resolvable features disposed on the mask so as to determine if there is an aberration. If the position of the predetermined pattern formed on the substrate differs from an expected position, which is determined from the position of the plurality of non-resolvable features, this shift from the expected position indicates the presence of an aberration.

Abstract: An alignment device, for use in a lithographic apparatus, for aligning a first object, provided with a first alignment mark relative to a second object, provided with a second alignment mark, employs as a radiation source a laser which emits an alignment beam having a wavelength which is of the order of 1000 nm and to the order of 1100 nm.

Abstract: When a material support is moved along with a stage, coordinates of the position of the material support are measured by a measuring device. Displacement of the material support in the Z-direction as caused by the movement of the stage is stored in the storage in association with coordinates of corresponding position of the material support. When the flatness measurement is performed on a material piece placed on the material support while the stage is moved, the amount of such displacement of the material support in the Z-direction that is indicated by the displacement data in the storage and corresponds to the current position of the material support at each measurement point, may be read out from the storage and used as correction amount for correcting the position of the material support in the Z-direction. In this manner, the flatness measurement may be performed with the correction thus effected.

Abstract: A system and method for stocking and sorting reticles used in a semiconductor fabrication facility, the facility having a material handling system that presents a reticle to a photolithography process area. In an example embodiment of the reticle management system, a reticle storage system and a reticle sorting apparatus are coupled to a host system that is adapted to track and control the movement of reticles in the material handling system. The host system is capable of interfacing with a management input module that integrates management directives into the reticle flow plan in the manufacturing process. The result is a reticle management system that is flexible enough to manage a finite number of reticles and pods in minimizing the delivery time of a reticle to the desired location while responding to changing conditions external to the manufacturing process.

Abstract: A device is described for exposing both sides of a light sensitive sheet such as a printed circuit board panel according to imaging data. The device comprises an optical system for scanning the sensitive sheet by one or more beams. The optical system scans both sides with the scan lines on one side mutually positioned with respect to the scan lines on the other side. According to one implementation, the optical system includes two optical scanning units driven by a single source, with a switch alternating the beam from the source to one then the other optical scanning unit.

Abstract: A radial tilt detector which is capable of detecting a tilt in a radial direction of an optical disc at a high degree of precision and being cost-effective and simple in head part construction. The radial tilt detector is provided in an optical disc information recording/reproduction apparatus which includes an optical head for projecting a condensed beam of light on a recording surface of a rotating optical disc and receiving the projected beam of light reflected from the recording surface of the optical disc, a focus actuator for focusing the condensed beam of light on its projected position of the recording surface of the optical disc, and a driver for outputting a drive signal to drive the focus actuator.

Abstract: Various options for improving throughput in an e-beam lithography apparatus are described. A slider lens moves in synchronism with the scanning motion of the electron beam.

Abstract: A portable gravity-based self-levelling device for projecting a laser ray or a flat beam of laser rays (L, L11, L12, L110, L120) in a horizontal and/or vertical direction even if the device lies in an inclined position, comprises: a case (C) in the form of a hollow housing (1); a pendulum (11) suspended inside the case (C) by suspension means (5, 9); means (23A, 23B, 24) for damping the pendulum swing; means (18, 19) for adjusting the equilibrium position of the pendulum (11); and, mounted on the pendulum (11), means (12) for projecting collimated visible laser rays. The suspension means comprise at least one first mechanical decoupling member such as a ball or roller bearing (5), associated with the hollow housing (1), and, lying in a plane perpendicular to that of the first member (5), a second mechanical decoupling member rigidly secured to the movable part (6) of said first member and supporting the pendulum (11).