Abstract: A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSexS(1-x), wherein 0?x?1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1.

Abstract: A method of preparing a quantum dot, a quantum dot prepared by the method, an optical member including the quantum dot, and an apparatus including the quantum dot. The quantum dot may include: a core including a III-V compound; a first shell surrounding the core and including ZnSe; a second shell surrounding the first shell and including ZnSe1-xSx, wherein x may be a real number greater than 0 and smaller than 1; and a third shell surrounding the second shell and including ZnS. The method may include: forming the first shell from a first material including zinc and a second material including selenium in a solution; forming the second shell by adding to the solution a third material including zinc and a fourth material including selenium and sulfur; and forming the third shell by adding to the solution a fifth material including zinc.

Abstract: This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures with fluoride passivation. The disclosure also provides methods of preparing nanostructures with fluoride and amine passivation. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.

Abstract: Present subject matter provides a semiconductor nanocrystal comprises a core and a shell. The core is fabricated from a first semiconductor. The shell is fabricated from a second semiconductor. The optical cross section of the semiconductor nanocrystal is in a range of 10?17 cm2-10?12 cm2 in a 2-3 eV region. The core is less than 2 nanometers from an outer surface of the shell in at least one region of the semiconductor nanocrystal. Present subject matter also provides method for preparation of the semiconductor nanocrystals and method for photosynthesis of organic compounds.

Abstract: Provided is a conductive paste for forming bus bar electrodes having high adhesive strength with respect to a passivation film in a crystalline silicon solar cell without having a detrimental effect on the passivation film so as to affect solar cell properties. The conductive paste is a conductive paste formed on a passivation film of a solar cell, containing: (A) silver particles, (B) an organic vehicle, and (C) glass fit containing TeO2 at 1.0 mol % to 20 mol % and Bi2O3 at 10 mol % to 30 mol %.

Abstract: Protective layers in lithium-ion electrochemical cells, and associated electrodes and methods, are generally described. The protective layers may comprise lithium-ion-conductive inorganic ceramic materials, such as lithium oxide, lithium nitride, and/or lithium oxysulfide. The resulting lithium-ion electrochemical cells may exhibit enhanced performance, including reduced capacity fade rates and reduced self-discharge rates.

Abstract: A negative electrode for an electrochemical cell of a secondary lithium metal battery may comprise a negative electrode current collector and a three-dimensional columnar lithium metal layer formed on a surface of the current collector. The columnar lithium metal layer may comprise a plurality of lithium metal columns and may be formed on the current collector using an electrochemical deposition process. In such process, the current collector and a counter electrode may be at least partially submerged in a nonaqueous liquid electrolyte solution and an electrical potential may be established between the metal substrate and the counter electrode such that lithium ions in the electrolyte solution are reduced to metallic lithium and deposited on the surface of the current collector in the form of a three-dimensional columnar lithium metal layer. The electrolyte solution may comprise lithium bis(fluorosulfonyl)imide (LiFSI) in a solution of fluoroethylene carbonate (FEC) and dimethyldicarbonate (DMDC).

Abstract: Provided herein is a method for preparing a ternary cathode material for lithium-ion battery by a static mixer, wherein the cathode material comprises a lithium multi-metal composite oxide represented by xLi2MnO3.(1-x) LiNiaMnbCocAl(1a-b-c)O2, where 0?a<1, 0?b<1, 0?c<1, a+b+c?1, and 0?x<1. The cathode material disclosed herein exhibits a high initial specific capacity, possesses good safety characteristics and shows excellent capacity retention.

Abstract: A power storage system that includes a first power storage pack and a second power storage pack. The second power storage pack is connected in parallel to the first power storage pack. The charge/discharge curve for the second power storage pack has a step passing through the open-circuit voltage of the first power storage pack at a SOC of 50%. The average discharge voltage on the lower SOC side of the start point of the step of the charge/discharge curve for the second power storage pack is ?25% or more of the open-circuit voltage of the first power storage pack at a SOC of 50%. The average charge voltage on the higher SOC side of the end point of the step of the charge/discharge curve for the second power storage pack is +25% or less of the open-circuit voltage of the first power storage pack at a SOC of 50%.

Abstract: A thermionic cathode, an electron emission apparatus, and a method of fabricating the thermionic cathode are provided. The thermionic cathode includes an emitter. The emitter includes a lanthanum hexaboride (LaB6) crystal having a crystallographic orientation of (310). The operating temperature of the thermionic cathode is greater than 1800 K.

Abstract: Some embodiments of vacuum electronics call for nanoscale field-enhancing geometries. Methods and apparatus for using nanoparticles to fabricate nanoscale field-enhancing geometries are described herein. Other embodiments of vacuum electronics call for methods of controlling spacing between a control grid and an electrode on a nano- or micron-scale, and such methods are described herein.

Abstract: The invention is directed to a pulverulent compound of the formula NiaM1bM2cOx(OH)y where M1 is at least one element selected from the group consisting of Fe, Co, Zn, Cu and mixtures thereof, M2 is at least one element selected from the group consisting of Mn, Al, Cr, B, Mg, Ca, Sr, Ba, Si and mixtures thereof, 0.3?a?0.83, 0.1?b?0.5, 0.01?c?0.5, 0.01?x?0.99 and 1.01?y?1.99, wherein the ratio of tapped density measured in accordance with ASTM B 527 to the D50 of the particle size distribution measured in accordance with ASTM B 822 is at least 0.2 g/cm3·?m. The invention is also directed to a method for the production of the pulverulent compound and the use as a precursor material for producing lithium compounds for use in lithium secondary batteries.

Abstract: Copper(II) acetate, zinc(II) acetate, and tin(IV) acetate are weighed so that the total amount of metal ions is 2.0×10?4 mol and the molar ratio of ions is Cu:Zn:Sn=2:1:1, and 2.0 cm3 of oleylamine is added to prepare a mixed solution. Apart from this, 1.0 cm3 of oleylamine is added to 2.0×10?4 mol of sulfur powder to prepare a mixed solution. These mixed solutions are separately heated at 60° C. and mixed at room temperature. The pressure in a test tube is reduced, followed by nitrogen filling. The test tube is heated at 240° C. for 30 minutes and then allowed to stand until room temperature. The resultant product is separated into a supernatant and precipitates by centrifugal separation. The separated supernatant is filtered, methanol is added to produce precipitates. The precipitates are dissolved by adding chloroform to prepare a semiconductor nanoparticle solution.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4Sb12-zSez, where 0<x?0.25 and 0.4<z?2.

Abstract: A colloidal material including semiconductor nanocrystals of formula AnXm, wherein A is selected from group Ib, IIa, IIb, IIIa, IIIb, IVa, IVb, Va, Vb, VIb, VIIb, VIII, IIb, III, IV or mixtures thereof, X is selected from group Va, VIa, VIIa or mixtures thereof, and n and m are independently a decimal number from 0 to 5. The semiconductor nanocrystals have a quasi 2D structure, wherein the smallest dimension is smaller than the other two dimensions by a factor of at least 1.5 and the faces substantially normal to the smallest dimension consist either of A or X. Also, a semiconducting thin film, an optoelectronic device, a laser, a photovoltaic cell, a diode, a light emitting diode or a display including the colloidal material.

Abstract: A method of producing a metal chalcogenide dispersion usable in forming a light absorbing layer of a solar cell, the method including: a metal chalcogenide nano particle formation step in which at least one metal or metal compound selected from the group consisting of a group 11, 12, 13, 14 or 15 metal or metal compound, a water-containing solvent and a group 16 element-containing compound are mixed together to obtain metal chalcogenide nano particles; and an addition step in which a compound (1) represented by general formula (1) is added to the metal chalcogenide nano particles, thereby obtaining a metal chalcogenide dispersion (wherein R1 to R4 each independently represents an alkyl group, an aryl group or a hydrogen atom; provided that at least one of R1 to R4 represents a hydrocarbon group).

Abstract: Carbon microspheres are doped with boron to enhance the electrical and physical properties of the microspheres. The boron-doped carbon microspheres are formed by a CVD process in which a catalyst, carbon source and boron source are evaporated, heated and deposited onto an inert substrate.

Abstract: The invention proposes W18O49-type tungsten oxide nanomaterial, which is fabricated with a precursor comprising WS2 and formed by thermal oxidation from the precursor. Applications using W18O49-type tungsten oxide nanomaterial in light sensor, MOSFET and solar cell, are also disclosed.

Abstract: Compositions for solution-based deposition of CIGS films are described. The compositions include ternary, quaternary or quinary chalcogenide nanoparticles (i.e., CIGS nanoparticles) and one or more inorganic salts dissolved or dispersed in a solvent to form an ink. The ink can be deposited on a substrate by conventional coating techniques and then annealed to form a crystalline layer. Further processing can be employed to fabricate a PV device. The inorganic salts are included to (i) tune the stoichiometry of the CIGS precursor ink to a desirable ratio, thus tuning the semiconductor band gap, to (ii) dope the CIGS layer with additives, such as Sb and/or Na, to promote grain growth, and/or to (iii) modify and improve the coating properties of the CIGS precursor ink.

Abstract: A method is provided for synthesizing a metal-doped transition metal hexacyanoferrate (TMHCF) battery electrode. The method prepares a first solution of AxFe(CN)6 and Fe(CN)6, where A cations may be alkali or alkaline-earth cations. The method adds the first solution to a second solution containing M-ions and M?-ions. M is a transition metal, and M? is a metal dopant. Subsequent to stirring, the mixture is precipitated to form AxMcM?dFez(CN)n.mH2O particles. The AxMcM?dFez(CN)n.mH2O particles have a framework and interstitial spaces in the framework, where M and M? occupy positions in the framework. Alternatively, the method prepares AaA?bMyFez(CN)n.mH2O particles. A and A? occupy interstitial spaces in the AaA?bMyFez(CN)n.mH2O particle framework. A metal-doped TMHCF electrode is also provided.

Abstract: Provided are a metal nitride material for a thermistor, which has a high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1-wAw)xAlyNz (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one of Sc, Zr, Mo, Nb, and W, 0.0<w<1.0, 0.70?y/(x+y)?0.98, 0.4?z?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: Electrode active material of the invention is mainly an amorphous transition metal complex represented by AxMPyOz (where x and y are values which independently satisfy 0?x?2 and 0?y?2, respectively, and z=(x+5y+valence of M)/2 to satisfy stoichiometry; also, A is an alkali metal and M is a metal element selected from transition metals), and has a peak near 220 cm?1 in Raman spectroscopy. Applying the electrode active material of the invention to a nonaqueous electrolyte secondary battery increases the capacity of the nonaqueous electrolyte secondary battery.

Abstract: The present invention relates to a ceramic-coated heater in which the outer surface of a heater rod is coated with ceramic to improve the physical properties thereof including durability, corrosion resistance, and the like, thereby enabling the heater to be used in water or air. The outer surface of the heater rod is coated with a ceramic composition to which an acrylic corrosion resistant wax is added, thereby strengthening the bonding force of the coating layer film, and thus improving the physical properties thereof including durability, corrosion resistance, and the like to enable the heater to be used in water. Therefore, the ceramic-coated heater of the present invention enables high thermal conductivity using less current and reduces energy consumption so that it can be utilized in a wide variety of industrial fields.

Abstract: Hybrid particles that comprise a coating surrounding a chalcopyrite material, the coating comprising a metal, a semiconductive material, or a polymer; a core comprising a chalcopyrite material and a shell comprising a functionalized chalcopyrite material, the shell enveloping the core; or a reaction product of a chalcopyrite material and at least one of a reagent, heat, and radiation. Methods of forming the hybrid particles are also disclosed.

Abstract: The amount of lithium ions that can be received and released in and from a positive electrode active material is increased, and high capacity and high energy density of a secondary battery are achieved. Provided is a lithium-manganese composite oxide represented by LixMnyMzOw, where M is a metal element other than Li and Mn, or Si or P, and y, z, and w satisfy 0?x/(y+z)<2, y>0, z>0, 0.26?(y+z)/w<0.5, and 0.2<z/y<1.2. The lithium manganese composite oxide has high structural stability and high capacity.

Abstract: Methods of manufacture of advanced electronic and photonic structures including heterojunction transistors, transistor lasers and solar cells and their related structures, are described herein. Other embodiments are also disclosed herein.

Abstract: Disclosed is a method for preparing a semiconductor nanocrystal, comprising: forming a reaction mixture comprising injecting one or more first semiconductor nanocrystal precursors including one or more Group V elements and one or more Group VI elements into a mixture including one or more second semiconductor nanocrystal precursors including one or more Group II elements and one or more Group III elements at a first temperature; and reacting the first and second semiconductor nanocrystal precursors in the reaction mixture at a second temperature for a period time sufficient to form a semiconductor nanocrystal core comprising at least a portion of the one or more Group II elements, one or more Group III elements, one or more Group V elements, and one or more Group VI elements included in the first and second semiconductor nanocrystal precursors, wherein the second temperature is greater than the first temperature.

Abstract: A method of synthesizing transition metal phosphide. In one embodiment, the method has the steps of preparing a transition metal lignosulfonate, mixing the transition metal lignosulfonate with phosphoric acid to form a mixture, and subjecting the mixture to a microwave radiation for a duration of time effective to obtain a transition metal phosphide.

Abstract: A radiation converter material includes a semiconductor material used for directly converting radiation quanta into electrical charge carriers. In at least one embodiment, the semiconductor material includes a dopant in a dopant concentration and defect sites produced in a process-dictated manner in such a way that the semiconductor material includes an ohmic resistivity in a range of between 5·107 ?·cm and 2·109 ?·cm. Such a radiation converter material is particularly well matched to the requirements in particular in human-medical applications with regard to the high flux rate present and the spectral distribution of the radiation quanta. In at least one embodiment, the invention additionally relates to a radiation converter and a radiation detector, and a use of and a method for producing such a radiation converter material.

Abstract: The present invention discloses an Al—Sb—Te phase change material used for PCM and fabrication method thereof. Said phase change material, which can be prepared by PVD, CVD, ALD, PLD, EBE, and ED, is a mixture of three elements aluminum (Al), antimony (Sb) and tellurium (Te) with a general formula of Alx(SbyTe1)1-x, where 0<x?0.85, 0.67?y?7. Said material is electrically driven from outside. By adjusting the content of three elements in the mixture, storage materials with different crystallization temperatures, melting temperatures and activation energies of crystallization can be achieved. Any two elements of aluminum, antimony and tellurium can be bonded to each other, so the adjustability is very high, maintaining the phase change properties in a wide range.

Abstract: Provided is an iron-based superconducting material including an iron-based superconductor having a crystal structure of ThCr2Si2, and nanoparticles which are expressed by BaXO3 (X represents one, two, or more kinds of elements selected from a group consisting of Zr, Sn, Hf, and Ti) and have a particle size of 30 nm or less. The nanoparticles are dispersed in a volume density of 1×1021m?3 or more.

Abstract: A compound semiconductor precursor ink composition includes an ink composition for forming a chalcogenide semiconductor film and a peroxide compound mixed with the ink composition. A method for forming a chalcogenide semiconductor film and a method for forming a photovoltaic device each include using the compound semiconductor precursor ink composition containing peroxide compound to form a chalcogenide semiconductor film.

Abstract: Disclosed herein are certain embodiments of a novel chemical synthesis route for lithium ion battery applications. Accordingly, various embodiments are focused on the synthesis of a new active material using NMC (Lithium Nickel Manganese Cobalt Oxide) as the precursor for a phosphate material having a layered crystal structure. Partial phosphate generation in the layer structured material stabilizes the material while maintaining the large capacity nature of the layer structured material.

Abstract: A process for producing nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table is described. The process comprises effecting conversion of a nanoparticle precursor composition comprising said group 13, 16, and 11 or 12 ions to the material of the nanoparticles in the presence of a selenol compound. A process for fabricating a thin film comprising nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table is also described, as well as a process for producing a printable ink formulation comprising said nanoparticles.

Abstract: Photovoltaic thin-film materials comprising crystalline tin sulfide alloys of the general formula Sn1-x(R)xS, where R is selected from magnesium, calcium and strontium, as well as methods of producing the same, are disclosed.

Abstract: Provided is a cathode for lithium secondary batteries comprising a combination of one or more compounds selected from Formula 1 and one or more compounds selected from Formula 2. The cathode provides a high-power lithium secondary battery composed of a non-aqueous electrolyte which exhibits long lifespan, long-period storage properties and superior stability at ambient temperature and high temperatures.

Abstract: A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.

Abstract: Provided are a mixed cathode active material having improved power characteristics and safety, and a lithium secondary battery including the same. More particularly, the present invention relates to a mixed cathode active material which may assist power in a low SOC range to widen an available state of charge (SOC) range and may simultaneously provide improved safety by blending substituted LFP, in which operating voltage is adjusted by substituting a portion of iron (Fe) with other elements such as titanium (Ti), in order to prevent a rapid increase in resistance of manganese (Mn)-rich having high capacity but low operating voltage in a low SOC range (e.g., a SOC range of 10% to 40%), and a lithium secondary battery including the mixed cathode active material.

Abstract: Disclosed herein are compatibilized polyamide-poly(arylene ether) thermoplastic resin compositions, comprising: (a) about 10 to about 50 weight percent of a poly(arylene ether); (b) about 5 percent to about 20 percent of a hydrogenated block copolymer of an alkenyl aromatic compound and a conjugated diene and a copolymer of ethylene; (c) about 30 to about 60 percent of a biopolyamide; and wherein all weight percents are based on the total weight of the composition; and wherein the biomass carbon content of the resin composition is at least 13 percent as measured by ASTM D6866. Also disclosed are methods for making such resins and articles derived therefrom.

Abstract: The present disclosure generally relates to systems and methods for producing and using Group-III nitride crystals that have enhanced or increase ultraviolet transparency in a range of wavelengths. The crystals may also be used in a number of UV optics and UV optical semiconductor devices.

Abstract: Provided herein are energy storage device cathodes with high capacity electrochemically active material including compounds that include iron, fluorine, sulfur, and optionally oxygen. Batteries with active materials including a compound of the formula FeFaSbOc exhibit high capacity, high specific energy, high average discharge voltage, and low hysteresis, even when discharged at high rates. Iron, fluorine, and sulfur-containing compounds may be ionically and electronically conductive.

Abstract: Disclosed are a positive active material composition for a rechargeable lithium battery, a positive electrode for a rechargeable lithium battery including the same, and a rechargeable lithium battery including the positive electrode. The positive active material composition for a rechargeable lithium battery includes a nickel-based positive active material having pH of greater than or equal to about 11; V2O5; an aqueous binder, and a conductive material.

Abstract: A process is disclosed for producing a doped gallium arsenide single crystal by melting a gallium arsenide starting material and subsequently solidifying the gallium arsenide melt, wherein the gallium arsenide melt contains an excess of gallium relative to the stoichiometric composition, and wherein it is provided for a boron concentration of at least 5×1017 cm?3 in the melt or in the obtained crystal. The thus obtained crystal is characterized by a unique combination of low dislocation density, high conductivity and yet excellent, very low optic absorption, particularly in the range of the near infrared.

Abstract: Metal chalcogenides, and methods of making and using metal chalcogenides, are disclosed herein. Metal chalcogenides can be prepared by heating suitable copper, zinc, and/or tin compounds selected from the group consisting of chalcogenocarbamates, dichalcogenocarbamates, mercaptides, thiiocarbonates, trithiocarbonates, and combinations thereof (e.g., copper, zinc, and/or tin dichalcogenocarbamates) under conditions effective to form metal can be used, for example, to prepare solar cells.

Abstract: A method for producing a nanoparticle for forming a CZTS compound semiconductor thin film is provided which includes the step of reacting a solution including a metal salt or a metal complex with a solution including a chalcogenide salt to produce a CZTS compound nanoparticle. A CZTS compound semiconductor thin film is formed by coating or printing the nanoparticle for forming the CZTS compound semiconductor thin film, and subjecting it to a heat treatment. A solar cell including the CZTS compound semiconductor thin film as the light-absorbing layer is provided.

Abstract: A process for producing nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table, and materials produced by the process. In an embodiment, the process includes effecting conversion of a nanoparticle precursor composition comprising group 13, 16, and 11 or 12 ions to the material of the nanoparticles in the presence of a selenol compound. Other embodiments include a process for fabricating a thin film including nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table as well as a process for producing a printable ink formulation including the nanoparticles.

Abstract: Disclosed are inorganic nanoparticles comprising a body comprising cadmium and/or zinc crystallized with selenium, sulfur, and/or tellurium; a multiplicity of phosphonic acid ligands comprising at least about 20% of the total surface ligand coverage; wherein the nanocrystal is capable of absorbing energy from a first electromagnetic region and capable of emitting light in a second electromagnetic region, wherein the maximum absorbance wavelength of the first electromagnetic region is different from the maximum emission wavelength of the second electromagnetic region, thereby providing a Stokes shift of at least about 20 nm, wherein the second electromagnetic region comprises an at least about 100 nm wide band of wavelengths, and wherein the nanoparticle exhibits has a quantum yield of at least about 10%. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

Abstract: An ink composition for forming a chalcogenide semiconductor film and a method for forming the same are disclosed. The ink composition includes a solvent, a plurality of metal chalcogenide nanoparticles and at least one selected from the group consisted of metal ions and metal complex ions. The metal ions and/or complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4-aSb12-zQz, where Q is at least one selected from the group consisting of O, S, Se and Te, 0<x?0.5, 0<a?1 and 0?z?4.

Abstract: A Cu—In—Zn—Sn—(Se,S)-based thin film for a solar cell and a preparation method thereof, and more particularly, to a Cu—In—Zn—Sn—(Se,S)-based thin film for a solar cell which can reduce an amount of In to be used and exhibit an excellent conversion efficiency and a preparation method thereof.