Sulfur, Tellurium, Selenium, Nitrogen, Phosphorus, Or Boron Containing Patents (Class 252/519.14)
  • Patent number: 9548180
    Abstract: Some embodiments of vacuum electronics call for nanoscale field-enhancing geometries. Methods and apparatus for using nanoparticles to fabricate nanoscale field-enhancing geometries are described herein. Other embodiments of vacuum electronics call for methods of controlling spacing between a control grid and an electrode on a nano- or micron-scale, and such methods are described herein.
    Type: Grant
    Filed: November 20, 2015
    Date of Patent: January 17, 2017
    Assignee: ELWHA LLC
    Inventors: Max N. Mankin, Tony S. Pan
  • Patent number: 9028710
    Abstract: The invention is directed to a pulverulent compound of the formula NiaM1bM2cOx(OH)y where M1 is at least one element selected from the group consisting of Fe, Co, Zn, Cu and mixtures thereof, M2 is at least one element selected from the group consisting of Mn, Al, Cr, B, Mg, Ca, Sr, Ba, Si and mixtures thereof, 0.3?a?0.83, 0.1?b?0.5, 0.01?c?0.5, 0.01?x?0.99 and 1.01?y?1.99, wherein the ratio of tapped density measured in accordance with ASTM B 527 to the D50 of the particle size distribution measured in accordance with ASTM B 822 is at least 0.2 g/cm3·?m. The invention is also directed to a method for the production of the pulverulent compound and the use as a precursor material for producing lithium compounds for use in lithium secondary batteries.
    Type: Grant
    Filed: July 23, 2008
    Date of Patent: May 12, 2015
    Assignee: H.C. Starck GmbH
    Inventors: Matthias Jahn, Gerd Maikowske, Stefan Malcus, Juliane Meese-Marktscheffel, Armin Olbrich, Rüdiger Zertani
  • Patent number: 9028723
    Abstract: Copper(II) acetate, zinc(II) acetate, and tin(IV) acetate are weighed so that the total amount of metal ions is 2.0×10?4 mol and the molar ratio of ions is Cu:Zn:Sn=2:1:1, and 2.0 cm3 of oleylamine is added to prepare a mixed solution. Apart from this, 1.0 cm3 of oleylamine is added to 2.0×10?4 mol of sulfur powder to prepare a mixed solution. These mixed solutions are separately heated at 60° C. and mixed at room temperature. The pressure in a test tube is reduced, followed by nitrogen filling. The test tube is heated at 240° C. for 30 minutes and then allowed to stand until room temperature. The resultant product is separated into a supernatant and precipitates by centrifugal separation. The separated supernatant is filtered, methanol is added to produce precipitates. The precipitates are dissolved by adding chloroform to prepare a semiconductor nanoparticle solution.
    Type: Grant
    Filed: February 25, 2010
    Date of Patent: May 12, 2015
    Assignees: National University Corporation Nagoya University, Osaka University, Tokyo University of Science Educational Foundation Administrative Organization
    Inventors: Tsukasa Torimoto, Ken-ichi Okazaki, Tatsuya Kameyama, Takaaki Osaki, Susumu Kuwabata, Akihiko Kudo
  • Patent number: 9017581
    Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4Sb12-zSez, where 0<x?0.25 and 0.4<z?2.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: April 28, 2015
    Assignee: LG Chem, Ltd.
    Inventors: Cheol-Hee Park, Tae-Hoon Kim, Deok-Hie Park, Kyung-Moon Ko
  • Publication number: 20150102271
    Abstract: A colloidal material including semiconductor nanocrystals of formula AnXm, wherein A is selected from group Ib, IIa, IIb, IIIa, IIIb, IVa, IVb, Va, Vb, VIb, VIIb, VIII, IIb, III, IV or mixtures thereof, X is selected from group Va, VIa, VIIa or mixtures thereof, and n and m are independently a decimal number from 0 to 5. The semiconductor nanocrystals have a quasi 2D structure, wherein the smallest dimension is smaller than the other two dimensions by a factor of at least 1.5 and the faces substantially normal to the smallest dimension consist either of A or X. Also, a semiconducting thin film, an optoelectronic device, a laser, a photovoltaic cell, a diode, a light emitting diode or a display including the colloidal material.
    Type: Application
    Filed: December 19, 2014
    Publication date: April 16, 2015
    Inventors: Benoit DUBERTRET, Sandrine ITHURRIA
  • Patent number: 8999746
    Abstract: A method of producing a metal chalcogenide dispersion usable in forming a light absorbing layer of a solar cell, the method including: a metal chalcogenide nano particle formation step in which at least one metal or metal compound selected from the group consisting of a group 11, 12, 13, 14 or 15 metal or metal compound, a water-containing solvent and a group 16 element-containing compound are mixed together to obtain metal chalcogenide nano particles; and an addition step in which a compound (1) represented by general formula (1) is added to the metal chalcogenide nano particles, thereby obtaining a metal chalcogenide dispersion (wherein R1 to R4 each independently represents an alkyl group, an aryl group or a hydrogen atom; provided that at least one of R1 to R4 represents a hydrocarbon group).
    Type: Grant
    Filed: August 8, 2013
    Date of Patent: April 7, 2015
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Atsushi Yamanouchi, Koichi Misumi, Akimasa Nakamura
  • Patent number: 8986836
    Abstract: Carbon microspheres are doped with boron to enhance the electrical and physical properties of the microspheres. The boron-doped carbon microspheres are formed by a CVD process in which a catalyst, carbon source and boron source are evaporated, heated and deposited onto an inert substrate.
    Type: Grant
    Filed: March 9, 2010
    Date of Patent: March 24, 2015
    Assignee: Ohio University
    Inventors: Anima B. Bose, Junbing Yang
  • Publication number: 20150079720
    Abstract: Compositions for solution-based deposition of CIGS films are described. The compositions include ternary, quaternary or quinary chalcogenide nanoparticles (i.e., CIGS nanoparticles) and one or more inorganic salts dissolved or dispersed in a solvent to form an ink. The ink can be deposited on a substrate by conventional coating techniques and then annealed to form a crystalline layer. Further processing can be employed to fabricate a PV device. The inorganic salts are included to (i) tune the stoichiometry of the CIGS precursor ink to a desirable ratio, thus tuning the semiconductor band gap, to (ii) dope the CIGS layer with additives, such as Sb and/or Na, to promote grain growth, and/or to (iii) modify and improve the coating properties of the CIGS precursor ink.
    Type: Application
    Filed: September 8, 2014
    Publication date: March 19, 2015
    Inventors: Zugang Liu, Cary Allen
  • Publication number: 20150075594
    Abstract: The invention proposes W18O49-type tungsten oxide nanomaterial, which is fabricated with a precursor comprising WS2 and formed by thermal oxidation from the precursor. Applications using W18O49-type tungsten oxide nanomaterial in light sensor, MOSFET and solar cell, are also disclosed.
    Type: Application
    Filed: January 17, 2014
    Publication date: March 19, 2015
    Applicant: National Tsing Hua University
    Inventors: Tri-Rung YEW, Yu-Ming HSU
  • Patent number: 8968925
    Abstract: A method is provided for synthesizing a metal-doped transition metal hexacyanoferrate (TMHCF) battery electrode. The method prepares a first solution of AxFe(CN)6 and Fe(CN)6, where A cations may be alkali or alkaline-earth cations. The method adds the first solution to a second solution containing M-ions and M?-ions. M is a transition metal, and M? is a metal dopant. Subsequent to stirring, the mixture is precipitated to form AxMcM?dFez(CN)n.mH2O particles. The AxMcM?dFez(CN)n.mH2O particles have a framework and interstitial spaces in the framework, where M and M? occupy positions in the framework. Alternatively, the method prepares AaA?bMyFez(CN)n.mH2O particles. A and A? occupy interstitial spaces in the AaA?bMyFez(CN)n.mH2O particle framework. A metal-doped TMHCF electrode is also provided.
    Type: Grant
    Filed: June 1, 2013
    Date of Patent: March 3, 2015
    Assignee: Sharp Laboratories of America, Inc.
    Inventors: Yuhao Lu, Jong-Jan Lee, David Evans
  • Publication number: 20150042445
    Abstract: Provided are a metal nitride material for a thermistor, which has a high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1-wAw)xAlyNz (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one of Sc, Zr, Mo, Nb, and W, 0.0<w<1.0, 0.70?y/(x+y)?0.98, 0.4?z?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.
    Type: Application
    Filed: August 8, 2014
    Publication date: February 12, 2015
    Inventors: Toshiaki Fujita, Hiroshi Tanaka, Noriaki Nagatomo
  • Patent number: 8951667
    Abstract: Electrode active material of the invention is mainly an amorphous transition metal complex represented by AxMPyOz (where x and y are values which independently satisfy 0?x?2 and 0?y?2, respectively, and z=(x+5y+valence of M)/2 to satisfy stoichiometry; also, A is an alkali metal and M is a metal element selected from transition metals), and has a peak near 220 cm?1 in Raman spectroscopy. Applying the electrode active material of the invention to a nonaqueous electrolyte secondary battery increases the capacity of the nonaqueous electrolyte secondary battery.
    Type: Grant
    Filed: February 15, 2008
    Date of Patent: February 10, 2015
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventor: Motoshi Isono
  • Patent number: 8951446
    Abstract: Hybrid particles that comprise a coating surrounding a chalcopyrite material, the coating comprising a metal, a semiconductive material, or a polymer; a core comprising a chalcopyrite material and a shell comprising a functionalized chalcopyrite material, the shell enveloping the core; or a reaction product of a chalcopyrite material and at least one of a reagent, heat, and radiation. Methods of forming the hybrid particles are also disclosed.
    Type: Grant
    Filed: February 3, 2012
    Date of Patent: February 10, 2015
    Assignee: Battelle Energy Alliance, LLC
    Inventors: Robert V. Fox, Rene Rodriguez, Joshua J. Pak, Chivin Sun
  • Patent number: 8952302
    Abstract: The present invention relates to a ceramic-coated heater in which the outer surface of a heater rod is coated with ceramic to improve the physical properties thereof including durability, corrosion resistance, and the like, thereby enabling the heater to be used in water or air. The outer surface of the heater rod is coated with a ceramic composition to which an acrylic corrosion resistant wax is added, thereby strengthening the bonding force of the coating layer film, and thus improving the physical properties thereof including durability, corrosion resistance, and the like to enable the heater to be used in water. Therefore, the ceramic-coated heater of the present invention enables high thermal conductivity using less current and reduces energy consumption so that it can be utilized in a wide variety of industrial fields.
    Type: Grant
    Filed: December 1, 2009
    Date of Patent: February 10, 2015
    Assignee: Thermolon Korea Co., Ltd.
    Inventor: Chung Kwon Park
  • Publication number: 20150014632
    Abstract: Methods of manufacture of advanced electronic and photonic structures including heterojunction transistors, transistor lasers and solar cells and their related structures, are described herein. Other embodiments are also disclosed herein.
    Type: Application
    Filed: October 1, 2014
    Publication date: January 15, 2015
    Inventor: Matthew H. Kim
  • Publication number: 20150014605
    Abstract: The amount of lithium ions that can be received and released in and from a positive electrode active material is increased, and high capacity and high energy density of a secondary battery are achieved. Provided is a lithium-manganese composite oxide represented by LixMnyMzOw, where M is a metal element other than Li and Mn, or Si or P, and y, z, and w satisfy 0?x/(y+z)<2, y>0, z>0, 0.26?(y+z)/w<0.5, and 0.2<z/y<1.2. The lithium manganese composite oxide has high structural stability and high capacity.
    Type: Application
    Filed: June 30, 2014
    Publication date: January 15, 2015
    Inventors: Takahiro KAWAKAMI, Shuhei YOSHITOMI, Teruaki OCHIAI, Yumiko SAITO, Yohei MOMMA, Satoshi SEO, Mayumi MIKAMI, Shunsuke ADACHI
  • Publication number: 20150004775
    Abstract: Disclosed is a method for preparing a semiconductor nanocrystal, comprising: forming a reaction mixture comprising injecting one or more first semiconductor nanocrystal precursors including one or more Group V elements and one or more Group VI elements into a mixture including one or more second semiconductor nanocrystal precursors including one or more Group II elements and one or more Group III elements at a first temperature; and reacting the first and second semiconductor nanocrystal precursors in the reaction mixture at a second temperature for a period time sufficient to form a semiconductor nanocrystal core comprising at least a portion of the one or more Group II elements, one or more Group III elements, one or more Group V elements, and one or more Group VI elements included in the first and second semiconductor nanocrystal precursors, wherein the second temperature is greater than the first temperature.
    Type: Application
    Filed: June 4, 2014
    Publication date: January 1, 2015
    Inventors: DIYUN HUANG, JONATHAN S. STECKEL
  • Patent number: 8920688
    Abstract: A method of synthesizing transition metal phosphide. In one embodiment, the method has the steps of preparing a transition metal lignosulfonate, mixing the transition metal lignosulfonate with phosphoric acid to form a mixture, and subjecting the mixture to a microwave radiation for a duration of time effective to obtain a transition metal phosphide.
    Type: Grant
    Filed: April 5, 2010
    Date of Patent: December 30, 2014
    Assignee: Board of Trustees of the University of Arkansas
    Inventor: Tito Viswanathan
  • Patent number: 8920686
    Abstract: A radiation converter material includes a semiconductor material used for directly converting radiation quanta into electrical charge carriers. In at least one embodiment, the semiconductor material includes a dopant in a dopant concentration and defect sites produced in a process-dictated manner in such a way that the semiconductor material includes an ohmic resistivity in a range of between 5·107 ?·cm and 2·109 ?·cm. Such a radiation converter material is particularly well matched to the requirements in particular in human-medical applications with regard to the high flux rate present and the spectral distribution of the radiation quanta. In at least one embodiment, the invention additionally relates to a radiation converter and a radiation detector, and a use of and a method for producing such a radiation converter material.
    Type: Grant
    Filed: January 28, 2011
    Date of Patent: December 30, 2014
    Assignee: Siemens Aktiengesellschaft
    Inventors: Peter Hackenschmied, Christian Schröter, Matthias Strassburg
  • Patent number: 8920684
    Abstract: The present invention discloses an Al—Sb—Te phase change material used for PCM and fabrication method thereof. Said phase change material, which can be prepared by PVD, CVD, ALD, PLD, EBE, and ED, is a mixture of three elements aluminum (Al), antimony (Sb) and tellurium (Te) with a general formula of Alx(SbyTe1)1-x, where 0<x?0.85, 0.67?y?7. Said material is electrically driven from outside. By adjusting the content of three elements in the mixture, storage materials with different crystallization temperatures, melting temperatures and activation energies of crystallization can be achieved. Any two elements of aluminum, antimony and tellurium can be bonded to each other, so the adjustability is very high, maintaining the phase change properties in a wide range.
    Type: Grant
    Filed: June 24, 2011
    Date of Patent: December 30, 2014
    Assignee: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
    Inventors: Cheng Peng, Liangcai Wu, Feng Rao, Zhitang Song, Bo Liu, Xilin Zhou, Min Zhu
  • Publication number: 20140349854
    Abstract: Provided is an iron-based superconducting material including an iron-based superconductor having a crystal structure of ThCr2Si2, and nanoparticles which are expressed by BaXO3 (X represents one, two, or more kinds of elements selected from a group consisting of Zr, Sn, Hf, and Ti) and have a particle size of 30 nm or less. The nanoparticles are dispersed in a volume density of 1×1021m?3 or more.
    Type: Application
    Filed: February 28, 2014
    Publication date: November 27, 2014
    Applicant: International Superconductivity Technology Center
    Inventors: Masashi Miura, Seiji Adachi, Keiichi Tanabe, Hideo Hosono
  • Patent number: 8894889
    Abstract: A compound semiconductor precursor ink composition includes an ink composition for forming a chalcogenide semiconductor film and a peroxide compound mixed with the ink composition. A method for forming a chalcogenide semiconductor film and a method for forming a photovoltaic device each include using the compound semiconductor precursor ink composition containing peroxide compound to form a chalcogenide semiconductor film.
    Type: Grant
    Filed: May 9, 2013
    Date of Patent: November 25, 2014
    Assignee: Neo Solar Power Corp.
    Inventors: Feng-Yu Yang, Ching Ting, Yueh-Chun Liao
  • Publication number: 20140335414
    Abstract: Disclosed herein are certain embodiments of a novel chemical synthesis route for lithium ion battery applications. Accordingly, various embodiments are focused on the synthesis of a new active material using NMC (Lithium Nickel Manganese Cobalt Oxide) as the precursor for a phosphate material having a layered crystal structure. Partial phosphate generation in the layer structured material stabilizes the material while maintaining the large capacity nature of the layer structured material.
    Type: Application
    Filed: May 8, 2013
    Publication date: November 13, 2014
    Inventors: Chun-Chieh Chang, Tsun Yu Chang
  • Publication number: 20140319433
    Abstract: A process for producing nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table is described. The process comprises effecting conversion of a nanoparticle precursor composition comprising said group 13, 16, and 11 or 12 ions to the material of the nanoparticles in the presence of a selenol compound. A process for fabricating a thin film comprising nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table is also described, as well as a process for producing a printable ink formulation comprising said nanoparticles.
    Type: Application
    Filed: July 14, 2014
    Publication date: October 30, 2014
    Inventors: Nigel Pickett, James Harris
  • Publication number: 20140318623
    Abstract: Photovoltaic thin-film materials comprising crystalline tin sulfide alloys of the general formula Sn1-x(R)xS, where R is selected from magnesium, calcium and strontium, as well as methods of producing the same, are disclosed.
    Type: Application
    Filed: April 30, 2014
    Publication date: October 30, 2014
    Applicant: Alliance for Sustainable Energy, LLC
    Inventor: Stephan LANY
  • Patent number: 8871117
    Abstract: Provided is a cathode for lithium secondary batteries comprising a combination of one or more compounds selected from Formula 1 and one or more compounds selected from Formula 2. The cathode provides a high-power lithium secondary battery composed of a non-aqueous electrolyte which exhibits long lifespan, long-period storage properties and superior stability at ambient temperature and high temperatures.
    Type: Grant
    Filed: April 16, 2013
    Date of Patent: October 28, 2014
    Assignee: LG Chem, Ltd.
    Inventors: Sung Kyun Chang, Hong-Kyu Park, Sinyoung Park, Soo Min Park, Ji Eun Lee
  • Patent number: 8858843
    Abstract: A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: October 14, 2014
    Assignee: Innovalight, Inc.
    Inventors: Elena Rogojina, Maxim Kelman, Giuseppe Scardera
  • Publication number: 20140291588
    Abstract: Provided are a mixed cathode active material having improved power characteristics and safety, and a lithium secondary battery including the same. More particularly, the present invention relates to a mixed cathode active material which may assist power in a low SOC range to widen an available state of charge (SOC) range and may simultaneously provide improved safety by blending substituted LFP, in which operating voltage is adjusted by substituting a portion of iron (Fe) with other elements such as titanium (Ti), in order to prevent a rapid increase in resistance of manganese (Mn)-rich having high capacity but low operating voltage in a low SOC range (e.g., a SOC range of 10% to 40%), and a lithium secondary battery including the mixed cathode active material.
    Type: Application
    Filed: June 18, 2014
    Publication date: October 2, 2014
    Inventors: Song Taek Oh, Sang Uck Lee, Su Rim Lee, Geun Chang Chung, Jae Kook Kim, Jin Sub Lim
  • Patent number: 8845934
    Abstract: Disclosed herein are compatibilized polyamide-poly(arylene ether) thermoplastic resin compositions, comprising: (a) about 10 to about 50 weight percent of a poly(arylene ether); (b) about 5 percent to about 20 percent of a hydrogenated block copolymer of an alkenyl aromatic compound and a conjugated diene and a copolymer of ethylene; (c) about 30 to about 60 percent of a biopolyamide; and wherein all weight percents are based on the total weight of the composition; and wherein the biomass carbon content of the resin composition is at least 13 percent as measured by ASTM D6866. Also disclosed are methods for making such resins and articles derived therefrom.
    Type: Grant
    Filed: September 12, 2011
    Date of Patent: September 30, 2014
    Assignee: SABIC Global Technologies B.V.
    Inventors: Roshan Kumar Jha, Satishkumar Mahanth
  • Publication number: 20140272564
    Abstract: Provided herein are energy storage device cathodes with high capacity electrochemically active material including compounds that include iron, fluorine, sulfur, and optionally oxygen. Batteries with active materials including a compound of the formula FeFaSbOc exhibit high capacity, high specific energy, high average discharge voltage, and low hysteresis, even when discharged at high rates. Iron, fluorine, and sulfur-containing compounds may be ionically and electronically conductive.
    Type: Application
    Filed: March 12, 2014
    Publication date: September 18, 2014
    Applicant: QuantumScape Corporation
    Inventors: Timothy P. Holme, Joseph Han, Weston Arthur Hermann, Rainer J. Fasching, Bradley O. Stimson, Cheng Chieh Chao
  • Publication number: 20140264388
    Abstract: The present disclosure generally relates to systems and methods for producing and using Group-III nitride crystals that have enhanced or increase ultraviolet transparency in a range of wavelengths. The crystals may also be used in a number of UV optics and UV optical semiconductor devices.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Applicant: Nitride Solutions Inc.
    Inventor: Nitride Solution Inc.
  • Publication number: 20140255771
    Abstract: Disclosed are a positive active material composition for a rechargeable lithium battery, a positive electrode for a rechargeable lithium battery including the same, and a rechargeable lithium battery including the positive electrode. The positive active material composition for a rechargeable lithium battery includes a nickel-based positive active material having pH of greater than or equal to about 11; V2O5; an aqueous binder, and a conductive material.
    Type: Application
    Filed: June 28, 2013
    Publication date: September 11, 2014
    Inventors: Seung-Hun Han, Myung-Duk Lim, Chae-Woong Cho
  • Patent number: 8815392
    Abstract: A process is disclosed for producing a doped gallium arsenide single crystal by melting a gallium arsenide starting material and subsequently solidifying the gallium arsenide melt, wherein the gallium arsenide melt contains an excess of gallium relative to the stoichiometric composition, and wherein it is provided for a boron concentration of at least 5×1017 cm?3 in the melt or in the obtained crystal. The thus obtained crystal is characterized by a unique combination of low dislocation density, high conductivity and yet excellent, very low optic absorption, particularly in the range of the near infrared.
    Type: Grant
    Filed: November 8, 2012
    Date of Patent: August 26, 2014
    Assignee: Freiberger Compound Materials GmbH
    Inventors: Ulrich Kretzer, Frank Börner, Stefan Eichler, Frieder Kropfgans
  • Publication number: 20140216555
    Abstract: Metal chalcogenides, and methods of making and using metal chalcogenides, are disclosed herein. Metal chalcogenides can be prepared by heating suitable copper, zinc, and/or tin compounds selected from the group consisting of chalcogenocarbamates, dichalcogenocarbamates, mercaptides, thiiocarbonates, trithiocarbonates, and combinations thereof (e.g., copper, zinc, and/or tin dichalcogenocarbamates) under conditions effective to form metal can be used, for example, to prepare solar cells.
    Type: Application
    Filed: January 20, 2012
    Publication date: August 7, 2014
    Applicant: REGENTS OF THE UNIVERSITY OF MINNESOTA
    Inventors: Eray S. Aydil, David J. Norris, Ankur Khare, Andrew Wilke Wills, Banu Selin Tosun
  • Publication number: 20140209174
    Abstract: A method for producing a nanoparticle for forming a CZTS compound semiconductor thin film is provided which includes the step of reacting a solution including a metal salt or a metal complex with a solution including a chalcogenide salt to produce a CZTS compound nanoparticle. A CZTS compound semiconductor thin film is formed by coating or printing the nanoparticle for forming the CZTS compound semiconductor thin film, and subjecting it to a heat treatment. A solar cell including the CZTS compound semiconductor thin film as the light-absorbing layer is provided.
    Type: Application
    Filed: March 28, 2014
    Publication date: July 31, 2014
    Applicants: TOKYO INSTITUTE OF TECHNOLOGY, TOPPAN PRINTING CO.,LTD.
    Inventors: Yiwen ZHANG, Akira YAMADA
  • Patent number: 8784701
    Abstract: A process for producing nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table, and materials produced by the process. In an embodiment, the process includes effecting conversion of a nanoparticle precursor composition comprising group 13, 16, and 11 or 12 ions to the material of the nanoparticles in the presence of a selenol compound. Other embodiments include a process for fabricating a thin film including nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table as well as a process for producing a printable ink formulation including the nanoparticles.
    Type: Grant
    Filed: November 26, 2008
    Date of Patent: July 22, 2014
    Assignee: Nanoco Technologies Ltd.
    Inventors: Nigel Pickett, James Harris
  • Patent number: 8784698
    Abstract: Disclosed are inorganic nanoparticles comprising a body comprising cadmium and/or zinc crystallized with selenium, sulfur, and/or tellurium; a multiplicity of phosphonic acid ligands comprising at least about 20% of the total surface ligand coverage; wherein the nanocrystal is capable of absorbing energy from a first electromagnetic region and capable of emitting light in a second electromagnetic region, wherein the maximum absorbance wavelength of the first electromagnetic region is different from the maximum emission wavelength of the second electromagnetic region, thereby providing a Stokes shift of at least about 20 nm, wherein the second electromagnetic region comprises an at least about 100 nm wide band of wavelengths, and wherein the nanoparticle exhibits has a quantum yield of at least about 10%. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.
    Type: Grant
    Filed: May 24, 2011
    Date of Patent: July 22, 2014
    Assignee: Vanderbilt University
    Inventors: Michael A. Schreuder, James R. McBride, Sandra J. Rosenthal
  • Patent number: 8771555
    Abstract: An ink composition for forming a chalcogenide semiconductor film and a method for forming the same are disclosed. The ink composition includes a solvent, a plurality of metal chalcogenide nanoparticles and at least one selected from the group consisted of metal ions and metal complex ions. The metal ions and/or complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.
    Type: Grant
    Filed: September 16, 2011
    Date of Patent: July 8, 2014
    Assignee: Neo Solar Power Corp.
    Inventors: Yueh-Chun Liao, Feng-Yu Yang, Ching Ting
  • Patent number: 8747705
    Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4Sb12-zTez, where 0<x?0.5 and 0.8<z?2.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: June 10, 2014
    Assignee: LG Chem, Ltd.
    Inventors: Cheol-Hee Park, Tae-Hoon Kim
  • Patent number: 8748726
    Abstract: According to various aspects, exemplary embodiments are provided of thermoelectric materials, which embodiments may have improved figure of merit. In one exemplary embodiment, a thermoelectric material generally includes bismuth telluride nanoparticles, which may be undoped or doped with at least one or more of silver, antimony, tin, and/or a combination thereof. The bismuth telluride nanoparticles may be dispersed in a matrix material comprising particulate bismuth telluride. Methods for making undoped and doped bismuth telluride nanoparticles are also disclosed, which may include a solvothermal method for making bismuth telluride nanoparticles having a size ranging from 1 to 200 nanometers.
    Type: Grant
    Filed: February 16, 2012
    Date of Patent: June 10, 2014
    Assignee: Laird Technologies, Inc.
    Inventors: Arup Purkayastha, Purushottam Joshi
  • Patent number: 8747704
    Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4-aSb12-zQz, where Q is at least one selected from the group consisting of O, S, Se and Te, 0<x?0.5, 0<a?1 and 0?z?4.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: June 10, 2014
    Assignee: LG Chem, Ltd.
    Inventors: Cheol-Hee Park, Tae-Hoon Kim
  • Patent number: 8747706
    Abstract: A Cu—In—Zn—Sn—(Se,S)-based thin film for a solar cell and a preparation method thereof, and more particularly, to a Cu—In—Zn—Sn—(Se,S)-based thin film for a solar cell which can reduce an amount of In to be used and exhibit an excellent conversion efficiency and a preparation method thereof.
    Type: Grant
    Filed: November 8, 2010
    Date of Patent: June 10, 2014
    Assignee: Korea Institute of Energy Research
    Inventors: Jae-Ho Yun, Kyung-Hoon Yoon, Sejin Ahn, Jihye Gwak, Kee-Shik Shin, Kyoo-Ho Kim, Jin-Hyeok Kim
  • Publication number: 20140151690
    Abstract: According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).
    Type: Application
    Filed: November 29, 2013
    Publication date: June 5, 2014
    Applicants: SAMSUNG DISPLAY CO., LTD., SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae-sang KIM, Sun-jae KIM, Hyun-suk KIM, Myung-kwan RYU, Joon-seok PARK, Seok-jun SEO, Jong-baek SEON, Kyoung-seok SON
  • Patent number: 8741182
    Abstract: This invention relates to methods for materials using compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. This invention further relates to thin film AIGS, AIS, and AGS materials made by a process of providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate at a temperature of from about 20° C. to about 650° C.
    Type: Grant
    Filed: August 26, 2010
    Date of Patent: June 3, 2014
    Assignee: Precursor Energetics, Inc.
    Inventors: Kyle L. Fujdala, Wayne A. Chomitz, Zhongliang Zhu, Matthew C. Kuchta, Qinglan Huang
  • Patent number: 8734688
    Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-zXnQ?z, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q? is at least one selected from the group consisting of O, S and Se; 0<x<1; 0<y<1; 0?m?1; 0?n<9; 0<z?2 and 0<a?1.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: May 27, 2014
    Assignee: LG Chem, Ltd.
    Inventors: Cheol-Hee Park, Tae-Hoon Kim
  • Patent number: 8734687
    Abstract: The present invention relates to screen-printable quaternary chalcogenide compositions. The present invention also provides a process for creating an essentially pure crystalline layer of the quaternary chalcogenide on a substrate. Such coated substrates contain p-type semiconductors and are useful as the absorber layer in a solar cell.
    Type: Grant
    Filed: November 23, 2010
    Date of Patent: May 27, 2014
    Assignee: E I du Pont de Nemours and Company
    Inventors: Alex Sergey Ionkin, Brian M. Fish, Ross Getty
  • Publication number: 20140138591
    Abstract: A positive electroactive material is described, including: a lithium iron manganese phosphate compound having a composition of LiaFe1-x-yMnxDy(PO4)z, wherein 1.0<a?1.10, 0<x?0.5, 0?y?0.10, 1.0<z?1.10 and D is selected from the group consisting of Co, Ni, V, Nb and combinations thereof; and a lithium metal oxide, wherein the lithium iron manganese phosphate compound is optionally doped with Ti, Zr, Nb, Al, Ta, W, Mg or F. A battery containing the positive electroactive material is also described.
    Type: Application
    Filed: January 24, 2014
    Publication date: May 22, 2014
    Applicant: A123 Systems, Inc.
    Inventors: Sang-Young YOON, Rocco IOCCO, Jeong Ju CHO
  • Patent number: 8728357
    Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-z-bXnQ?z, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q? is at least one selected from the group consisting of O, S and Se; 0<x<1; 0<y<1; 0?m?1; 0?n<9; 0<z?2; 0?a?1, 0<b?3 and 0<n+z+b<12.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: May 20, 2014
    Assignee: LG Chem, Ltd.
    Inventors: Cheol-Hee Park, Tae-Hoon Kim
  • Publication number: 20140131751
    Abstract: A wavelength converting substance is made of semiconductor material. The wavelength converting substance is suitable for absorbing an exciting light with the wavelength range falling between 300 nanometers and 490 nanometers and converting the exciting light to an emitted light with wavelength range falling between 450 nanometers and 750 nanometers.
    Type: Application
    Filed: May 29, 2013
    Publication date: May 15, 2014
    Applicant: GENESIS PHOTONICS INC.
    Inventors: Yun-Li Li, Yu-Chu Li, Cheng-Yen Chen
  • Publication number: 20140131632
    Abstract: The invention relates to methods for preparing 3-element semiconductor nanocrystals of the formula WYxZ(1?x), wherein W is a Group II element, Y and Z are different Group VI elements, and 0<x<1, comprising dissolving a Group II element, a first Group VI element, and a second Group VI element in a one or more solvents. The Group II, VI and VI elements are combined to provide a II:VI:VI SCN precursor solution, which is heated to a temperature sufficient to produce semiconductor nanocrystals of the formula WYxZ(1?x). The solvent used to dissolve the Group II element comprises octadecene and a fatty acid. The solvent used to dissolve the Group VI elements comprises octadecene. The invention also includes semiconductor nanocrystals prepared according to the disclosed methods, as well as methods of using the semiconductor nanocrystals.
    Type: Application
    Filed: June 3, 2013
    Publication date: May 15, 2014
    Applicant: Crystalplex Corporation
    Inventor: Lianhua Qu