Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4-aSb12-z-bQz, where Q is at least one selected from the group consisting of O, S, Se and Te; 0<x?0.5; 0?a?1; 0<b?3; and 0<z?4.

Abstract: The present invention provides a process for preparing a solution of electrically uncharged [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10, comprising at least the steps of (A) contacting ZnO and/or Zn(OH)2 with ammonia in at least one solvent in order to obtain a solution of electrically uncharged [(OH)x(NH3)yZn]z where x, y and z each independently 0.01 to 10 with a concentration c1, (B) removing some solvent from the solution from step (A) in order to obtain a suspension comprising Zn(OH)2, (C) removing solid Zn(OH)2 from the suspension from step (B), and (D) contacting the Zn(OH)2 from step (C) with ammonia in at least one solvent in order to obtain a solution of electrically uncharged [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10 with the concentration c2, and to highly concentrated solutions of electrically uncharged [(OH)x(NH3)yZn]z where x, y and z are each independently 0.

Abstract: A lubricating and shock absorbing materials are described, which are based on nanoparticles having the formula A1-x-Bx-chalcogenide. Processes for their manufacture are also described.

Abstract: Disclosed is an electroconductive material which contains at least a vanadium oxide and a phosphorus oxide, and has a crystalline structure composed of a crystalline phase and an amorphous phase, in which the crystalline phase contains a monoclinic vanadium-containing oxide, and a volume of the crystalline phase is larger than that of the amorphous phase. The electroconductive material has a reduced specific resistance and has improved functions as an electrode material, a solid-state electrolyte, or a sensor such as a thermistor.

Abstract: Ferrous phosphate (II) (Fe3(PO4)2) powders, lithium iron phosphate (LiFePO4) powders for a Li-ion battery and methods for manufacturing the same are provided. The ferrous phosphate (II) powders are represented by the following formula (I): Fe(3-x)Mx(PO4)2.yH2O??(I) wherein, M, x, and y are defined in the specification, the ferrous phosphate (II) powders are composed of plural flake powders, and the length of each of the flake powders is 0.5-10 ?m.

Abstract: A process is disclosed for producing a doped gallium arsenide single crystal by melting a gallium arsenide starting material and subsequently solidifying the gallium arsenide melt, wherein the gallium arsenide melt contains an excess of gallium relative to the stoichiometric composition, and wherein it is provided for a boron concentration of at least 5×1017 cm?3 in the melt or in the obtained crystal. The thus obtained crystal is characterized by a unique combination of low dislocation density, high conductivity and yet excellent, very low optic absorption, particularly in the range of the near infrared.

Abstract: The invention relates to a chemical compound of the formula NibM1cM2d(O)x(OH)y, wherein M1 denotes at least one element from the group consisting of Fe, Co, Mg, Zn, Cu and/or mixtures thereof, M2 denotes at least one element from the group consisting of Mn, Al, B, Ca, Cr and/or mixtures thereof, wherein b?0.8, c?0.5, d?0.5, and x is a number between 0.1 and 0.8, y is a number between 1.2 and 1.9, and x+y=2. A process for the preparation thereof, and the use thereof as a precursor for the preparation of cathode material for secondary lithium batteries are described.

Abstract: This invention relates to processes for compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. In particular, this invention relates to molecular precursor compounds and precursor materials for preparing photovoltaic layers including CAIGAS.

Abstract: A compound of formula Lia+y(M1(1?t)Mot)2M2b(O1?xF2x)c wherein: M1 is selected from the group consisting in Ni, Mn, Co, Fe, V or a mixture thereof; M2 is selected from the group consisting in B, Al, Si, P, Ti, Mo; with 4?a?6; 0<b?1.8; 3.8?c?14; 0?x<1; ?0.5?y?0.5; 0?t?0.9; b/a<0.45; the coefficient c satisfying one of the following relationships: c=4+y/2+z+2t+1.5b if M2 is selected from B and Al; c=4+y/2+z+2t+2b if M2 is selected from Si, Ti and Mo; c=4+y/2+z+2t+2.5b if M2 is P; with z=0 if M1 is selected from Ni, Mn, Co, Fe and z=1 if M1 is V.

Abstract: A method of improving the thermoelectric figure of merit (ZT) of a high-efficiency thermoelectric material is disclosed. The method includes the addition of fullerene (C60) clusters between the crystal grains of the material. It has been found that the lattice thermal conductivity (?L) of a thermoelectric material decreases with increasing fullerene concentration, due to enhanced phonon-large defect scattering. The resulting power factor (S2/?) decrease of the material is offset by the lattice thermal conductivity reduction, leading to enhanced ZT values at temperatures of between 350 degrees K and 700 degrees K.

Abstract: Amorphous or partially amorphous nanoscale ion storage materials are provided. For example, lithium transition metal phosphate storage compounds are nanoscale and amorphous or partially amorphous in an as-prepared state, or become amorphous or partially amorphous upon electrochemical intercalation or de-intercalation by lithium. These nanoscale ion storage materials are useful for producing devices such as high energy and high power storage batteries.

Abstract: Provided herein are electroactive agglomerated particles, which comprise nanoparticles of a first electroactive material and nanoparticles of a second electroactive materials, and processes of preparation thereof.

Abstract: A thermoelectric material and a method of making a thermoelectric material are provided. In certain embodiments, the thermoelectric material comprises at least 10 volume percent porosity. In some embodiments, the thermoelectric material has a zT greater than about 1.2 at a temperature of about 375 K. In some embodiments, the thermoelectric material comprises a topological thermoelectric material. In some embodiments, the thermoelectric material comprises a general composition of (Bi1-xSbx)u(Te1-ySey)w, wherein 0?x?1, 0?y?1, 1.8?u?2.2, 2.8?w?3.2. In further embodiments, the thermoelectric material includes a compound having at least one group IV element and at least one group VI element. In certain embodiments, the method includes providing a powder comprising a thermoelectric composition, pressing the powder, and sintering the powder to form the thermoelectric material.

Abstract: The method according to the present invention includes a first step of supplying the Group V source gas at a flow rate B1 (0<B1) and supplying the gas containing magnesium at a flow rate C1 (0<C1) while supplying the Group III source gas at a flow rate A1 (0?A1); and a second step of supplying a Group V source gas at a flow rate B2 (0<B2) and supplying a gas containing magnesium at a flow rate C2 (0<C2) while supplying a Group III source gas at a flow rate A2 (0<A2). The first step and the second step are repeated a plurality of times to form a p-AlxGa1-xN (0?x<1) layer, and the flow rate A1 is a flow rate which allows no p-AlxGa1-xN layer to grow and satisfies A1?0.5A2.

Abstract: A cathode active material comprising a composition represented by the following general formula (1): LiaM1xM2yM3zPmSinO4??(1) wherein M1 is at least one kind of element selected from the group of Mn, Fe, Co and Ni; M2 is any one kind of element selected from the group of Zr, Sn, Y and Al; M3 is at least one kind of element selected from the group of Zr, Sn, Y, Al, Ti, V and Nb and different from M2; “a” satisfies 0<a?1; “x” satisfies 0<x?2; “y” satisfies 0<y<1; “z” satisfies 0<z<1; “m” satisfies 0?m<1; and “n” satisfies 0<n?1.

Abstract: A phase-change material, which has a high crystallization temperature and is superior in thermal stability of the amorphous phase, which has a composition of the general chemical formula GexMyTe100-x-y wherein M indicates one type of element which is selected from the group which comprises Al, Si, Cu, In, and Sn, x is 5.0 to 50.0 (at %) and y is 4.0 to 45.0 (at %) in range, and x and y are selected so that 40 (at %)?x+y?60 (at %). This phase-change material further contains, as an additional element L, at least one type of element L which is selected from the group which comprises N, O, Al, Si, P, Cu, In, and Sn in the form of GexMyLzTe100-x-y-z wherein z is selected so that 40 (at %)?x+y+z?60 (at %).

Abstract: Chalcogen compound powder containing Cu—In—Ga—Se and having an average particle diameter (DSEM) of 80 nm or less and a low content of carbon is obtained by forming a mixed solvent by mixing together at least any one of a mixture of copper salt and indium salt, a composite hydroxide of copper and indium, and a composite oxide of copper and indium, any one of selenium and a selenium compound, and a solvent having a boiling point of 250° C. or less, and heating the mixed solvent to a temperature of 220° C. to 500° C. A thin film containing Cu—In—Ga—Se and having low resistance is obtained by using paste of the chalcogen compound powder.

Abstract: The present invention relates to screen-printable quaternary chalcogenide compositions. The present invention also provides a process for creating an essentially pure crystalline layer of the quaternary chacogenide on a substrate. Such coated substrates contain p-type to semiconductors and are useful as the absorber layer in a solar cell.

Abstract: Provided is a precursor for the preparation of a lithium transition metal oxide that is used for the preparation of a lithium transition metal oxide as a cathode active material for a lithium secondary battery, through a reaction with a lithium-containing compound, wherein the precursor contains two or more transition metals, and sulfate ion (SO4)-containing salt ions derived from a transition metal salt for the preparation of the precursor have a content of 0.1 to 0.7% by weight, based on the total weight of the precursor.

Abstract: The chalcogen compound has a high content of carbon and thus leads to a high resistance value. Chalcogen compound powder containing Cu—In—(Ga)—Se and having an average particle diameter (D50) of less than 0.5 ?m and a carbon content of 0.2% or less by mass in the powder is obtained in a way that metal hydroxide powder having an average primary particle diameter of 0.3 ?m or less, and one or more kinds selected from a group consisting of selenium and selenium compounds are heated to 220° C. or more in a reducing gas.

Abstract: Provided is the method for producing, by heat treating raw material powder, a lithium ion secondary battery positive electrode material which contains an olivine-structure crystal represented by general formula LiMxFe1-xPO4 (where 0?x<1 and M is at least one type selected from Nb, Ti, V, Cr, Mn, Co and Ni), wherein the raw material powder contains trivalent iron compound. The present invention allows for stably producing at reduced cost a lithium ion secondary battery positive electrode material which contains olivine-type LiMxFe1-xPO4 crystal.

Abstract: The present invention provides a semiconductor powder composed of Cu-M-Sn—S in a single phase wherein M is at least one selected from the group consisting of Zn, Co, Ni, Fe and Mn, the powder being obtained by wet synthesis, and a method for producing this semiconductor powder. According to the present invention, it is possible to provide, in a simple way, a high-grade semiconductor powder composed of a single-phase Cu-M-Sn—S such as CZTS.

Abstract: Solid particles of a compound (Y) having a composition represented by AxMyP3Oz (wherein the element A is at least one member selected from the group consisting of Li and Na, the element M is at least one member selected from the group consisting of Fe, Mn, Co and Ni, the valency N of the element M satisfies +2<N?+4, 0<x<4, and 0<y<3) and a compound (Z) containing the element M are blended to achieve a composition of AaMbPOw (wherein 0<a<2 and 0.8<b<1.2), the blended product is mixed while it is pulverized, and heated in an inert gas or in a reducing gas to obtain particles of a phosphate compound (X) having a composition represented by AaMbPOw (wherein A derives from the compound (Y), and M derives from the compounds (Y) and (Z)), by a solid phase reaction.

Abstract: Disclosed herein is a method for the preparation of metal phosphide nanocrystals using a phosphite compound as a phosphorous precursor. More specifically, disclosed herein is a method for preparing metal phosphide nanocrystals by reacting a metal precursor with a phosphite compound in a solvent. A method is also provided for passivating a metal phosphide layer on the surface of a nanocrystal core by reacting a metal precursor with a phosphite compound in a solvent. The metal phosphide nanocrystals have uniform particle sizes and various shapes.

Abstract: A compound comprising a composition Ax(M?1?aM?a)y(XD4)z, Ax(M?1?aM?a)y(DXD4)z, or Ax(M?1?aM?a)y(X2D7)z, (A1?aM?a)xM?y(XD4)z, (A1?aM?a)xM?y(DXD4)z, or (A1?aM?a)xM?y(X2D7)z. In the compound, A is at least one of an alkali metal and hydrogen, M? is a first-row transition metal, X is at least one of phosphorus, sulfur, arsenic, molybdenum, and tungsten, M? any of a Group IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB, IVB, VB, and VIB metal, D is at least one of oxygen, nitrogen, carbon, or a halogen, 0.0001<a?0.1, and x, y, and z are greater than zero. The compound can be used in an electrochemical device including electrodes and storage batteries.

Abstract: Metal ion conducting ceramic materials are disclosed having characteristics of high ion conductivity for certain alkali and monovalent metal ions at low temperatures, high selectivity for the metal ions, good current efficiency and stability in water and corrosive media under static and electrochemical conditions. The metal ion conducting ceramic materials are fabricated to be deficient in the metal ion. One general formulation of the metal ion conducting ceramic materials is Me1+x+y?zMIIIyMIV2?ySixP3?xO12?z/2, wherein Me is Na+, Li+, K+, Rb+, Cs+, Ag+, or mixtures thereof, 2.0?x?2.4, 0.0?y?1.0, and 0.05?z?0.9, where MIII is Al3+, Ga3+, Cr3+, Sc3+, Fe3+, In3+, Yb3+, Y3+, or mixtures thereof and MIV is Ti4+, Zr4+, Hf4+, or mixtures thereof.

Abstract: Single source precursors or pre-copolymers of single source precursors are subjected to microwave radiation to form particles of a I-III-VI2 material. Such particles may be formed in a wurtzite phase and may be converted to a chalcopyrite phase by, for example, exposure to heat. The particles in the wurtzite phase may have a substantially hexagonal shape that enables stacking into ordered layers. The particles in the wurtzite phase may be mixed with particles in the chalcopyrite phase (i.e., chalcopyrite nanoparticles) that may fill voids within the ordered layers of the particles in the wurtzite phase thus produce films with good coverage. In some embodiments, the methods are used to form layers of semiconductor materials comprising a I-III-VI2 material. Devices such as, for example, thin-film solar cells may be fabricated using such methods.

Abstract: A coordination compound of an element of the boron group, the production of the compound and methods of using the compound as an additive, stabilizer, catalyst, co-catalyst, activator for catalyst systems, conductivity improver, and electrolyte.

Abstract: A process for preparing transition metal carbonates with a mean particle diameter in the range from 6 to 19 ?m (D50), which comprises combining, in a stirred vessel, at least one solution of at least one transition metal salt with at least one solution of at least one alkali metal carbonate or alkali metal hydrogencarbonate to prepare an aqueous suspension of transition metal carbonate, and, in at least one further compartment, continuously introducing a mechanical power in the range from 50 to 10 000 W/l in a proportion of the suspension in each case, based on the proportion of the suspension, and then recycling the proportion into the stirred vessel.

Abstract: The present invention relates to a process for preparing transition metal hydroxides with a mean particle diameter in the range from 6 to 12 ?m (D50), which comprises combining, in a stirred vessel, at least one solution of at least one transition metal salt with at least one solution of at least one alkali metal hydroxide to prepare an aqueous suspension of transition metal hydroxide, and, in at least one further compartment, continuously introducing a mechanical power in the range from 50 to 10 000 W/l in a proportion of the suspension in each case, based on the proportion of the suspension, and then recycling the proportion into the stirred vessel.

Abstract: An alkaline secondary cell has an electrode assembly including a positive electrode, a negative electrode and a separator, and alkaline electrolyte. The negative electrode includes hydrogen-storage alloy and an oxidation inhibitor that inhibits the hydrogen-storage alloy from being oxidized. The oxidation inhibitor contains a chemical compound, and the chemical compound includes a chemical-bond-formation end that is chemically bonded to the surface of the hydrogen-storage alloy and a water-repellent end having water repellency.

Abstract: An ammonothermal growth of group-III nitride crystals on starting seed crystals with at least two surfaces making an acute, right or obtuse angle, i.e., greater than 0 degrees and less than 180 degrees, with respect to each other, such that the exposed surfaces together form a concave surface.

Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

Abstract: Process for preparing precursors for transition metal mixed oxides, wherein (A) an optionally basic transition metal carbonate is treated thermally at temperatures in the range from 200 to 900° C., (B) washed one or more times, and (C) then dried.

Abstract: A process for preparing transition metal mixed oxide precursors, including: (A) precipitating, from aqueous solution at a pH of 8.0 to 9.0, a compound of formula (I): M(CO3)bOc(OH)dAmBe(SO4)fXg(PO4)h??(I), wherein: M is one or more transition metals, A is sodium or potassium, B is one or more metals of groups 1 to 3, excluding Na and potassium, X is halide, nitrate or carboxylate, b is 0.75 to 0.98, c is zero to 0.50, d is zero to 0.50, where the sum (c+d) is 0.02 to 0.50, e is zero to 0.1, f is zero to 0.05, g is zero to 0.05, h is zero to 0.10, m is 0.002 to 0.1, and (B) separating the precipitated material from the mother liquor, where the particles of material of formula (I) have a spherical shape.

Abstract: A method for producing a GaN crystal capable of achieving at least one of the prevention of nucleation and the growth of a high-quality non-polar surface is provided. The production method of the present invention is a method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, including an adjustment step of adjusting the carbon content of the melt, and a reaction step of causing the gallium and nitrogen to react with each other. According to the production method of the present invention, nucleation can be prevented, and as shown in FIG. 4, a non-polar surface can be grown.

Abstract: A thermoelectric conversion material includes a complex oxide containing Zn, Al, Ga, and B. The thermoelectric conversion material is one in which a ratio of a molar amount of B to a total molar amount of Zn, Al, Ga, and B is not less than 0.0001 and not more than 0.01. The thermoelectric conversion material is one in which the relative density of the complex oxide is not less than 95% The thermoelectric conversion material is one in which at least a part of a surface of the complex oxide is coated with a film. A thermoelectric conversion module is provided with a plurality of n-type thermoelectric conversion materials, a plurality of p-type thermoelectric conversion materials, and a plurality of electrodes electrically serially connecting the p-type thermoelectric conversion materials and the n-type thermoelectric conversion materials in an alternate arrangement, and at least one material of the plurality of n-type thermoelectric conversion materials is the aforementioned thermoelectric conversion material.

Abstract: A positive active material for a lithium secondary battery comprises a core comprising a compound that can reversibly intercalate and deintercalate lithium; and a compound attached to the surface of the core and represented by Chemical Formula 1: Li1+xM(I)xM(II)2?xSiyP3?yO12,??[Chemical Formula 1] wherein M(I) and M(II) are selected from the group consisting of Al, Zr, Hf, Ti, Ge, Sn, Cr, Nb, Ga, Fe, Sc, In, Y, La, Lu, and Mg, and 0<x?0.7, 0?y?1.

Abstract: This invention relates to processes for a range of compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials for photovoltaic applications including devices and systems for energy conversion and solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. A compound may contain repeating units {MA(ER)(ER)} and {MB(ER)(ER)}, wherein each MA is Cu, each MB is In or Ga, each E is S, Se, or Te, and each R is independently selected, for each occurrence, from alkyl, aryl, heteroaryl, alkenyl, amido, silyl, and inorganic and organic ligands.

Abstract: A composition for use in an electrochemical redox reaction is described. The composition may comprise a material represented by a general formula MyXO4 or AxMyXO4, where each of A (where present), M, and X independently represents at least one element, O represents oxygen, and each of x (where present) and y represent a number, and an oxide of at least one of various elements, wherein the material and the oxide are cocrystailine, and/or wherein a volume of a crystalline structural unit of the composition may be different than a volume of a crystalline structural unit of the material alone. An electrode comprising such a composition is also described, as is an electrochemical cell comprising such an electrode. A process of preparing a composition for use in an electrochemical redox reaction is also described.

Abstract: The present invention discloses heavily doped PbSe with high thermoelectric performance. Thermoelectric property measurements disclosed herein indicated that PbSe is high zT material for mid-to-high temperature thermoelectric applications. At 850 K a peak zT>1.3 was observed when nH˜1.0×1020 cm?3. The present invention also discloses that a number of strategies used to improve zT of PbTe, such as alloying with other elements, nanostructuring and band modification may also be used to further improve zT in PbSe.

Abstract: Provided is a cathode for lithium secondary batteries comprising a combination of one or more compounds selected from Formula 1 and one or more compounds selected from Formula 2. The cathode provides a high-power lithium secondary battery composed of a non-aqueous electrolyte which exhibits long lifespan, long-period storage properties and superior stability at ambient temperature and high temperatures.

Abstract: A phase change material for use in a phase change memory device comprises germanium-antimony-tellurium-indium, wherein the phase change material comprises in total more than 30 at % antimony, preferably 5-16 at % germanium, 30-60 at % antimony, 25-51 at % tellurium, and 2-33% at % indium.

Abstract: This invention relates to compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. In particular, this invention relates to molecular precursor compounds and precursor materials for preparing photovoltaic layers including CAIGAS.

Abstract: The invention relates to crystalline nanometric olivine-type LiFe1-xMxPO4 powder with M being Co and/or Mn, and 0?x?1, with small particle size and narrow particle size distribution. A direct precipitation process is described, comprising the steps of: providing a water-based mixture having at a pH between 6 and 10, containing a dipolar aprotic additive, and Li(I), Fe(II), P(V), and Co(II) and/or Mn(II) as precursor components; heating said water-based mixture to a temperature less than or equal to its boiling point at atmospheric pressure, thereby precipitating crystalline LiFe1-xMxPO4 powder. An extremely fine particle size is obtained of about 80 nm for Mn and 275 nm for Co, both with a narrow distribution.

Abstract: Disclosed are open-framework solids that possess superior ion-transport properties pertinent to the electrochemical performance of next-generation electrode materials for battery devices. Disclosed compounds including compositions and architectures relevant to electrical energy storage device applications have been developed through integrated solid-state and soft (solution) chemistry studies. The solids can adopt a general formula of AxMy(XO4)z, where A=mono- or divalent electropositive cations (e.g., Li+), M—trivalent transition metal cations (e.g., Fe3+, Mn3+), and X=Si, P, As, or V. Also disclosed are oxo analogs of these materials having the general formulae AaMbOc(PO4)d (a?b), and more specifically, AnMnO3x(PO4)n?2x, where A=mono- or divalent electropositive cations (e.g., Li+), M is either Fe or Mn, and x is between 0 and n/2.

Abstract: Copper(II) acetate, zinc(II) acetate, and tin(IV) acetate are weighed so that the total amount of metal ions is 2.0×10?4 mol and the molar ratio of ions is Cu:Zn:Sn=2:1:1, and 2.0 cm3 of oleylamine is added to prepare a mixed solution. Apart from this, 1.0 cm3 of oleylamine is added to 2.0×10?4 mol of sulfur powder to prepare a mixed solution. These mixed solutions are separately heated at 60° C. and mixed at room temperature. The pressure in a test tube is reduced, followed by nitrogen filling. The test tube is heated at 240° C. for 30 minutes and then allowed to stand until room temperature. The resultant product is separated into a supernatant and precipitates by centrifugal separation. The separated supernatant is filtered, methanol is added to produce precipitates. The precipitates are dissolved by adding chloroform to prepare a semiconductor nanoparticle solution.

Abstract: A cathode active material of the present invention is a cathode active material having a composition represented by General Formula (1) below, LiFe1-xMxP1-ySiyO4??(1), where: an average valence of Fe is +2 or more; M is an element having a valence of +2 or more and is at least one type of element selected from the group consisting of Zr, Sn, Y, and Al; the valence of M is different from the average valence of Fe; 0<x?0.5; and y=x×({valence of M}?2)+(1?x)×({average valence of Fe}?2). This provides a cathode active material that not only excels in terms of safety and cost but also can provide a long-life battery.

Abstract: A process for producing electrode materials, which comprises treating a mixed oxide which comprises lithium and at least one transition metal as cations with at least one oxygen-containing organic compound of sulfur or phosphorus or a corresponding alkali metal or ammonium salt of an oxygen-containing organic compound of sulfur or phosphorus, or a fully alkylated derivative of an oxygen-containing compound of sulfur or phosphorus.

Abstract: A phosphate based compound basically comprising—A: exchangeable cations used in charging and discharging, e.g. Li, Na, K, Ag, —B: non-exchangeable cations from the transition metals, group 3-12 of the periodic table of elements, e.g. Fe, Mn, Co, Cr, Ti, V, Cu, Sc, —C: 60 Mol-%-90 Mol-%, preferably 75 Mol-% of the compound being phosphate (PO4)3? anions, where oxygen is or may be partially substituted by a halide (e.g. F, Cl) and/or OH? to a maximum concentration of 10 Mol-% of the oxygen of the anions and wherein said (PO4)3? coordination polyhedra may be partially substituted by one or more of: SiO44 silicate, BO33? borate, CO32? carbonate, H2O water up to a maximum amount of <31 Mol-% of the anions, said compound being in crystalline form and having open elongate channels extending through the unit cell of the structure and with the compound being present either in single crystal form or as an anisotropic microcrystalline or nanocrystalline material.