Sulfur, Tellurium, Selenium, Nitrogen, Phosphorus, Or Boron Containing Patents (Class 252/519.14)
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Patent number: 8545736Abstract: Disclosed herein is a method for the preparation of metal phosphide nanocrystals using a phosphite compound as a phosphorous precursor. More specifically, disclosed herein is a method for preparing metal phosphide nanocrystals by reacting a metal precursor with a phosphite compound in a solvent. A method is also provided for passivating a metal phosphide layer on the surface of a nanocrystal core by reacting a metal precursor with a phosphite compound in a solvent. The metal phosphide nanocrystals have uniform particle sizes and various shapes.Type: GrantFiled: July 24, 2012Date of Patent: October 1, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Shin Ae Jun, Eun Joo Jang, Jung Eun Lim
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Patent number: 8535574Abstract: This invention provides a transition metal complex of formula MXY2Z and a manufacturing method thereof, wherein M is selected from iron, ruthenium, and osmium; X represents a ligand shown in formula (II) wherein R1 and R1? are independently selected from COOH, PO3H2, PO4H2, SO3H2, SO4H2, and derivatives thereof; Y is selected from H2O, Cl, Br, CN, NCO, NCS, and NCSe; Z represents a bidentate ligand having at least two fluorinated chains. In addition, this invention also provides photovoltaic cells and a manufacturing method thereof.Type: GrantFiled: April 15, 2010Date of Patent: September 17, 2013Assignee: National Taipei University of TechnologyInventors: Norman Lu, Jia-Sheng Shing, Wen-Han Tu
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Patent number: 8529801Abstract: A negative active material of a negative electrode of a rechargeable lithium battery, the negative active material including a metallic active material core and a polymer, having a tensile strength of at least 40 MPa, coated on particles of the metallic active material. The polymer controls the volumetric expansion of the negative active material and enhances the cycle-life characteristics of the battery.Type: GrantFiled: October 1, 2008Date of Patent: September 10, 2013Assignee: Samsung SDI Co., Ltd.Inventors: Nam-Soon Choi, Jea-Woan Lee, Kyoung-Han Yew, Sung-Soo Kim
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Publication number: 20130221283Abstract: Provided are a positive electrode active material for improving an output and a lithium secondary battery including the same. Particularly, graphite and conductive carbon which have shapes and sizes different from each other, may be simultaneously coated on a mixed positive electrode material of a 3-component system lithium-containing metal oxide having a layered structure and expressed as following Chemical Formula 1 and LiFePO4 having an olivine structure as an conductive material to improve high resistance occurrence and conductivity reduction phenomenon of a 3-component system lithium metal oxide due to a difference between particle sizes and surface areas of the 3-component system lithium-containing metal oxide and LiFePO4 olivine. Li1+aNixCoyMn1-x-yO2, 0?a<0.5, 0<x<1, 0<y<0.Type: ApplicationFiled: August 3, 2012Publication date: August 29, 2013Applicant: LG CHEM. LTD.Inventors: Song Taek OH, Sung Kyun CHANG, Sin Young PARK, Sun Jung HWANG, Jin Hyung LIM, Geun Chang CHUNG, Sin Kyu KIM, Jung Seok CHOI, Keun Wan AN
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Publication number: 20130214212Abstract: The present invention relates to a process for the preparation of compounds of general formula (I) Lia-bM1bV2-cM2c(PO4)x??(I) wherein M1, M2, a, b, c and x have the following meanings: M1: Na, K, Rb and/or Cs, M2: Ti, Zr, Nb, Cr, Mn, Fe, Co, Ni, Al, Mg and/or Sc, a: 1.5-4.5, b: 0-0.6, c: 0-1.98 and x: number to equalize the charge of Li and V and M1 and/or M2, if present, wherein a-b is >0, to a compound according to general formula (I) as defined above, to spherical agglomerates and/or particles comprising at least one compound of general formula (I) as defined above, to the use of such a compound for the preparation of a cathode of a lithium ion battery or an electrochemical cell, and to a cathode for a lithium ion battery, comprising at least one compound as defined above.Type: ApplicationFiled: April 2, 2013Publication date: August 22, 2013Applicant: BASF SEInventor: BASF SE
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Patent number: 8512603Abstract: This invention relates to a range of compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials for photovoltaic applications including devices and systems for energy conversion and solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. A compound may contain repeating units {MA(ER)(ER)} and {MB(ER)(ER)}, wherein each MA is Cu, each MB is In or Ga, each E is S, Se, or Te, and each R is independently selected, for each occurrence, from alkyl, aryl, heteroaryl, alkenyl, amido, silyl, and inorganic and organic ligands.Type: GrantFiled: August 2, 2010Date of Patent: August 20, 2013Assignee: Precursor Energetics, Inc.Inventors: Kyle L. Fujdala, Wayne A. Chomitz, Zhongliang Zhu, Matthew C. Kuchta
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Patent number: 8506847Abstract: The present invention relates to a process for the preparation of compounds of general formula (I) Lia-bM1bV2-cM2c(PO4)x (I) with M1: Na, K, Rb and/or Cs, M2: Ti, Zr, Nb, Cr, Mn, Fe, Co, Ni, Al, Mg and/or Sc, a: 1.5-4.5, b: 0-0.6, c: 0-1.98 and x: number to equalize the charge of Li and V and M1 and/or M2, if present, wherein a?b is >0, by providing an essentially aqueous mixture comprising at least one lithium-comprising compound, at least one vanadium-comprising compound in which vanadium has the oxidation state +5 and/or +4, and at least one M1-comprising compound, if present, and/or at least one M2-comprising compound, if present, and at least one reducing agent which is oxidized to at least one compound comprising at least one phosphorous atom in oxidation state +5, drying and calcining.Type: GrantFiled: September 18, 2008Date of Patent: August 13, 2013Assignee: BASF SEInventors: Hartmut Hibst, Brian Roberts, Jordan Keith Lampert, Kirill Bramnik
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Publication number: 20130202958Abstract: PVDF-g-PAN has been synthesized by grafting polyacrylonitrile onto polyvinylidene fluoride using an ATRP/AGET method. The novel polymer is ionically conducive and has much more flexibility than PVDF alone, making it especially useful either as a binder in battery cell electrodes or as a polymer electrolyte in a battery cell.Type: ApplicationFiled: January 20, 2013Publication date: August 8, 2013Applicant: SEEO, INCInventors: Jin Yang, Hany Basam Eitouni, Yan Li
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Publication number: 20130202946Abstract: Disclosed is lithium iron phosphate having an olivine crystal structure, wherein the length in the direction [001] is greater than the length in the direction [010] when the Li+ diffusion direction is the direction [010] in the lattice structure of the crystal.Type: ApplicationFiled: September 12, 2012Publication date: August 8, 2013Applicant: LG CHEM, LTD.Inventors: Sang Hoon CHOY, Yong Tae LEE, Hong Kyu PARK
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Patent number: 8496856Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4Sb12-n-zQ?nSez, where Q? is at least one selected from the group consisting of O and S, 0<x?0.5, 0<n?2 and 0?z<2.Type: GrantFiled: September 14, 2012Date of Patent: July 30, 2013Assignee: LG Chem, Ltd.Inventors: Cheol-Hee Park, Tae-Hoon Kim
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Patent number: 8486296Abstract: A process for preparing a formulation comprising a carbon-deposited lithium metal phosphate, as precursor of a lithium ion battery electrode coating slurry.Type: GrantFiled: July 15, 2011Date of Patent: July 16, 2013Assignee: Clariant (Canada) Inc.Inventors: Guoxian Liang, Jasmin Dufour
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Publication number: 20130171522Abstract: A positive electrode for a lithium rechargeable battery, the positive electrode including a positive electrode active material; a binder; and a positive electrode additive represented by the following Formula 1: wherein R is a substituted or unsubstituted C1 to C10 alkyl group or a substituted or unsubstituted C5 to C30 aryl group and n is 0 or 1.Type: ApplicationFiled: July 16, 2012Publication date: July 4, 2013Inventors: Daesik Kim, Maengeun Lee, Jiten Singh, Wonil Jung, Seonhye Kim
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Publication number: 20130168574Abstract: The invention relates to compounds of the general formula I (Ba1-a-bSraEub)2+x(Lu1-c-dYcGdd)2?x(PO4)2+x(SiO4)1-x??(I) where b stands for a value from the range 0<b?0.2 a, c, d stand, independently of one another, for a value from the range from 0 to 1 x stands for a value from the range from 0 to 0.8, and to a process for the preparation of these phosphors and to the use thereof as conversion phosphors or in lamps.Type: ApplicationFiled: August 16, 2011Publication date: July 4, 2013Applicant: MERCK PATENT GESELLSCHAFT MIT BESCHRANKTER HAFTUNGInventors: Holger Winkler, Thomas Juestel, Arturas Kastelnikovas, Olga Darcanova
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Publication number: 20130164622Abstract: A positive active material for a rechargeable lithium battery including a compound represented by the following Chemical Formula 1: LixMyCozPO4??Chemical Formula 1 wherein 0?x?2, 0.98?y?1, 0<z?0.02, M is selected from the group consisting of V, Mn, Fe, Ni, and combinations thereof, and the compound exhibits a peak at a 2? value in a range of 40.0 degrees to 41.0 degrees in an X-ray diffraction pattern measured using CuK? radiation, is disclosed.Type: ApplicationFiled: August 13, 2012Publication date: June 27, 2013Inventors: Han-Eol Park, Sang-In Park, Ki-Hyun Kim, Ji-Hyun Kim, Jay-Hyok Song, Yong-Chan You, Ha-Young Lee
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Publication number: 20130153033Abstract: An ink for forming a compound semiconductor thin film is provided, which contains a binder includes a compound includes an S atom or an Se atom and metallic compound particles which are both dispersed in an organic solvent. A compound semiconductor thin film is formed by applying or printing the ink for forming a compound semiconductor thin film and heat-treating it. A solar cell is constituted, which has a light-absorbing layer formed of the compound semiconductor thin film.Type: ApplicationFiled: February 15, 2013Publication date: June 20, 2013Applicant: TOPPAN PRINTING CO., LTD.Inventor: Toppan Printing Co., Ltd.
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Publication number: 20130157133Abstract: A method of synthesizing defect-free phospho-olivine materials is disclosed. The method is based on direct hydrothermal synthesis of phospho-olivine compound(s) and subsequent lattice reordering at or near the transition temperature to eliminate lattice defects or on one-pot in situ hydrothermal synthesis of phospho-olivine compound(s), where the cation ordering occurs during dwell time after rapid synthesis to eliminate lattice defects. The disclosed methods produce defect-free phospho-olivine compound(s) having a crystal lattice with a Pnma space group. In order to determine the exact transition temperature for complete removal of single- or mixed-transition metals from lithium sites or to monitor the crystal growth and removal of single- or mixed-transition metals from lithium sites during the hydrothermal synthesis, the method encompasses a procedure for determining and monitoring defects in the phospho-olivine phases using X-ray diffraction.Type: ApplicationFiled: November 14, 2012Publication date: June 20, 2013Applicant: Brookhaven Science Associates, LLCInventor: Brookhaven Science Associates, LLC
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Patent number: 8465679Abstract: This invention relates to methods for making materials using compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. This invention further relates to methods for making CA(I,G,A)S, CAIGAS, A(I,G,A)S, AIGAS, C(I,G,A)S, and CIGAS materials by providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate at a temperature of from about 20° C. to about 650° C.Type: GrantFiled: August 26, 2010Date of Patent: June 18, 2013Assignee: Precursor Energetics, Inc.Inventors: Kyle L. Fujdala, Wayne A. Chomitz, Zhongliang Zhu, Matthew C. Kuchta
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Publication number: 20130149607Abstract: A composition including a first material and a metal or a metal oxide component for use in an electrochemical redox reaction is described. The first material is represented by a general formula M1xM2yXO4, wherein M1 represents an alkali metal element; M2 represents an transition metal element; X represents phosphorus; O represents oxygen; x is from 0.6 to 1.4; and y is from 0.6 to 1.4. Further, the metal or the metal oxide component includes at least two materials selected from the group consisting of transition metal elements, semimetal elements, group IIA elements, group IIIA elements, group IVA elements, alloys thereof and oxides of the above metal elements and alloys, wherein the two materials include different metal elements. Moreover, the first material and the metal or the metal oxide component are co-crystallized or physically combined, and the metal or the metal oxide component takes less than about 30% of the composition.Type: ApplicationFiled: February 11, 2013Publication date: June 13, 2013Applicant: Advanced Lithium Electrochemistry Co., Ltd.Inventor: Advanced Lithium Electrochemistry Co., Ltd.
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Publication number: 20130140507Abstract: A thermoelectric material that comprises a ternary main group matrix material and nano-particles and/or nano-inclusions of transition metal oxide dispersed therein. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of transition metal oxide nanoparticles.Type: ApplicationFiled: December 1, 2011Publication date: June 6, 2013Applicant: Toyota Motor Engin. & Manufact. N.A. (TEMA)Inventor: Michael P. Rowe
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Patent number: 8454927Abstract: The invention relates to methods for preparing 3-element semiconductor nanocrystals of the formula WYxZ(1-x), wherein W is a Group II element, Y and Z are different Group VI elements, and 0<X<1, comprising dissolving a Group II element, a first Group VI element, and a second Group VI element in a one or more solvents. The Group II, VI and VI elements are combined to provide a II:VI:VI SCN precursor solution, which is heated to a temperature sufficient to produce semiconductor nanocrystals of the formula WYxZ(1-x). The solvent used to dissolve the Group II element comprises octadecene and a fatty acid. The solvent used to dissolve the Group VI elements comprises octadecene. The invention also includes semiconductor nanocrystals prepared according to the disclosed methods, as well as methods of using the semiconductor nanocrystals.Type: GrantFiled: August 4, 2005Date of Patent: June 4, 2013Assignee: Crystalplex CorporationInventor: Lianhua Qu
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Publication number: 20130136987Abstract: Provided is a lithium ion positive electrode active material for a secondary battery that can realize a high operating voltage and a high capacity while suppressing capacity drop with cycles by using a low-cost material. A positive electrode active material for a secondary battery, which is a lithium manganese composite oxide represented by the following general formula (I) Lia(MxMn2-x-yYy)(O4-wZw) ??(I) wherein in the formula (I), 0.5?x?1.2, 0<y?0.3, 0?a?1.2, and 0<w?1; M contains at least Fe and may further contain at least one selected from the group consisting of Ni, Cr and Cu other than Fe; Y is at least one selected from the group consisting of Li, Be, B, Na, Mg, Al, K, Ca, Ti and Si; and Z is at least one of F and Cl.Type: ApplicationFiled: July 25, 2011Publication date: May 30, 2013Applicant: NEC ENERGY DEVICES, LTD.Inventors: Makiko Uehara, Takehiro Noguchi
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Patent number: 8449792Abstract: Provided is a cathode for lithium secondary batteries comprising a combination of one or more compounds selected from Formula 1 and one or more compounds selected from Formula 2. The cathode provides a high-power lithium secondary battery composed of a non-aqueous electrolyte which exhibits long lifespan, long-period storage properties and superior stability at ambient temperature and high temperatures.Type: GrantFiled: October 25, 2011Date of Patent: May 28, 2013Assignee: LG Chem, Ltd.Inventors: Sung Kyun Chang, Hong-Kyu Park, Sinyoung Park, Soo Min Park, Ji Eun Lee
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Patent number: 8449793Abstract: This invention relates to methods and articles using compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. In particular, this invention relates to molecular precursor compounds and precursor materials for preparing photovoltaic layers including CAIGAS.Type: GrantFiled: August 20, 2010Date of Patent: May 28, 2013Assignee: Precursor Energetics, Inc.Inventors: Kyle L. Fujdala, Wayne A. Chomitz, Zhongliang Zhu, Matthew C. Kuchta
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Publication number: 20130119325Abstract: Disclosed is a cathode for secondary batteries comprising a compound having a transition metal layer containing lithium as at least one compound selected from the following formula 1: (1?x)Li(LiyM1?y?zMaz)O2?bAb*xLi3PO4 (1) wherein M is an element stable for a six-coordination structure, which is at least one selected from transition metals that belong to first and second period elements; Ma is a metal or non-metal element stable for a six-coordination structure; A is at least one selected from the group consisting of halogen, sulfur, chalcogenide compounds and nitrogen; 0<x<0.1; 0<y<0.3; 0?z<0.2; and 0?b<0.1.Type: ApplicationFiled: July 11, 2012Publication date: May 16, 2013Applicant: LG CHEM, LTD.Inventors: Sung-Kyun CHANG, Jinhyung LIM, DongHun LEE, Hong Kyu PARK, Su-Min PARK
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Patent number: 8440114Abstract: This invention relates to methods for materials using compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. This invention further relates to thin film CA(I,G,A)S, CAIGAS, A(I,G,A)S, AIGAS, C(I,G,A)S, and CIGAS materials made by a process of providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate at a temperature of from about 20° C. to about 650° C.Type: GrantFiled: August 26, 2010Date of Patent: May 14, 2013Assignee: Precursor Energetics, Inc.Inventors: Kyle L. Fujdala, Wayne A. Chomitz, Zhongliang Zhu, Matthew C. Kuchta
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Publication number: 20130109601Abstract: A nanostructure, being either an Inorganic Fullerene-like (IF) nanostructure or an Inorganic Nanotube (INT), having the formula A1?x-Bx-chalcogenide are described. A being a metal or transition metal or an alloy of metals and/or transition metals, B being a metal or transition metal B different from that of A and x being ?0.3. A process for their manufacture and their use for modifying the electronic character of A-chalcogenide are described.Type: ApplicationFiled: November 7, 2012Publication date: May 2, 2013Applicant: YEDA RESEARCH AND DEVELOPMENT COMPANY LTD.Inventor: Yeda research and development company ltd.
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Publication number: 20130099180Abstract: Alkaline-earth metals are used to reduce impurity incorporation into a Group-III nitride crystal grown using the ammonothermal method.Type: ApplicationFiled: October 24, 2012Publication date: April 25, 2013Applicant: The Regents of the University of CaliforniaInventor: The Regents of the University of California
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Patent number: 8425808Abstract: The present application discloses, in various embodiments, semiconducting layer compositions comprising a non-amorphous semiconductor material and a molecular glass. Electronic devices, such as thin-film transistors, are also disclosed. The semiconducting layer compositions exhibit good film-forming properties and high mobility.Type: GrantFiled: April 27, 2010Date of Patent: April 23, 2013Assignee: Xerox CorporationInventors: Yiliang Wu, Ping Liu, Anthony James Wigglesworth, Nan-Xing Hu
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Publication number: 20130081940Abstract: The composition of matter comprising Ga(Sbx)N1?x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.Type: ApplicationFiled: September 28, 2012Publication date: April 4, 2013Applicants: The University Of Louisville Research Foundation, Inc., The University of Kentucky Research FoundationInventors: The University of Kentucky Research Foundation, The University Of Louisville Research Foundation
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Publication number: 20130075673Abstract: The present invention provides a method for producing a lithium-containing composite oxide represented by general formula (1) below, the method at least including a step of preparing a solution by dissolving a lithium source, an element M source, a phosphorus source, and an element X source that serve as source materials in a solvent, the phosphorus source being added after at least the element M source is dissolved; a step of gelating the resulting solution; and a step of calcining the resulting gel: LixMyP1-zXzO4??(1) (where M represents at least one element selected from the group consisting of Fe, Ni, Mn, Zr, Sn, Al, and Y; X represents at least one element selected from the group consisting of Si and Al; and 0<x?2, 0.8?y?1.2, 0?z?1). According to the present invention, a positive electrode active material for lithium secondary batteries that offers high safety and high cost efficiency and are capable of extending battery life can be provided.Type: ApplicationFiled: June 1, 2011Publication date: March 28, 2013Applicant: SHARP KABUSHIKI KAISHAInventors: Motoaki Nishijima, Koji Ohira, Toshitsugu Sueki, Shougo Esaki, Isao Tanaka, Yukinori Koyama, Katsuhisa Tanaka, Koji Fujita, Shunsuke Murai
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Patent number: 8404147Abstract: The present invention relates to a process for producing lithium iron phosphate particles, wherein the process has a step of obtaining a melt containing, as represented by mol % based on oxides, from 1 to 50% of Li2O, from 20 to 50% of Fe2O3 and from 30 to 60% of P2O5; a step of cooling and solidifying the melt; a step of pulverizing the solidified product into a desired particle shape; and a step of heating the pulverized product in the air or under oxidizing conditions (0.21<oxygen partial pressure<1.0) at from 350 to 800° C. to precipitate crystals of LinFe2(PO4)3 (0<n<3), in this order.Type: GrantFiled: September 23, 2011Date of Patent: March 26, 2013Assignee: Asahi Glass Company, LimitedInventor: Yoshihisa Beppu
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Publication number: 20130069019Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4Sb12-zTez, where 0<x?0.5 and 0.8<z?2.Type: ApplicationFiled: September 14, 2012Publication date: March 21, 2013Applicant: LG CHEM, LTD.Inventors: Cheol-Hee PARK, Tae-Hoon KIM
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Publication number: 20130048939Abstract: A light-emitting device, such as a light-emitting diode (LED), has a group III-nitride current spreading layer which is either doped with transition metal, or comprises alternating transition metal nitride layer and group III-nitride layer. Also provided is a light-emitting device, such as a light-emitting diode (LED), having a quantum well doped with transition metal. Also provided is a method of forming transition-metal containing AlInGaN electrical conductive material.Type: ApplicationFiled: August 22, 2011Publication date: February 28, 2013Applicant: INVENLUX LIMITEDInventors: JIANPING ZHANG, CHUNHUI YAN
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Publication number: 20130022871Abstract: A material, in particular an active material, for an electrode of a galvanic element, and a method for the production of the material, a mixture for the production of an electrode for a galvanic element, and a galvanic element, in particular a battery, and a medical implant comprising such a battery.Type: ApplicationFiled: July 17, 2012Publication date: January 24, 2013Applicant: LITRONIK BATTERIETECHNOLOGIE GMBHInventors: Tim Traulsen, Gerd Fehrmann, Thomas Hucke, Andreas Deckert, Joerg Feller, Tom Schuffenhauer
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Publication number: 20130022873Abstract: A method of growing electrochemically active materials in situ within a dispersed conductive matrix to yield nanocomposite cathodes or anodes for electrochemical devices, such as lithium-ion batteries. The method involves an in situ formation of a precursor of the electrochemically active materials within the dispersed conductive matrix followed by a chemical reaction to subsequently produce the nanocomposite cathodes or anodes, wherein: the electrochemically active materials comprise nanocrystalline or microcrystalline electrochemically active metal oxides, metal phosphates or other electrochemically active materials; the dispersed conductive matrix forms an interconnected percolation network of electrically conductive filaments or particles, such as carbon nanotubes; and the nanocomposite cathodes or anodes comprise a homogeneous distribution of the electrochemically active materials within the dispersed conductive matrix.Type: ApplicationFiled: July 19, 2012Publication date: January 24, 2013Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Jon Fold von Bulow, Hong-Li Zhang, Daniel E. Morse
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Publication number: 20130022874Abstract: A method for producing a lithium alkali transition metal oxide for use as a positive electrode material for lithium secondary batteries by a precipitation method. The positive electrode material is a lithium alkali transition metal composite oxide and is prepared by mixing a solid state mixed with alkali and transition metal carbonate and a lithium source. The mixture is thermally treated to obtain a small amount of alkali metal residual in the lithium transition metal composite oxide cathode material.Type: ApplicationFiled: September 18, 2012Publication date: January 24, 2013Applicant: UCHICAGO ARGONNE, LLCInventor: UCHICAGO ARGONNE, LLC
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Publication number: 20130020539Abstract: A novel multiband absorption based solar cell is disclosed by using the europium chalcogenides (EuX, X?O, S, Se, Te) and related magnetic semiconductor materials, in which an intermediate band is formed by the localized Eu 4f electrons between p-states of chalcogen ions and Eu s-d states. The energy gaps among the multibands can be in the spectral range of the sunlight, thus they can serve as better sunlight absorbers in solar cells than the conventional single band-gap semiconductors such as Si and GaAs. With these multiband semiconductors, the bottleneck in current power conversion efficiency can be potentially overcome in single junction photovoltaics.Type: ApplicationFiled: July 21, 2011Publication date: January 24, 2013Inventor: Zhixun Ma
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Publication number: 20130015414Abstract: Affords AlxGa1-xN crystal growth methods, as well as AlxGa1-xN crystal substrates, wherein bulk, low-dislocation-density crystals are obtained. The AlxGa1-xN crystal (0<x?1) growth method is a method of growing, by a vapor-phase technique, an AlxGa1-xN crystal (10), characterized by forming, in the growing of the crystal, at least one pit (10p) having a plurality of facets (12) on the major growth plane (11) of the AlxGa1-xN crystal (10), and growing the AlxGa1-xN crystal (10) with the at least one pit (10p) being present, to reduce dislocations in the AlxGa1-xN crystal (10).Type: ApplicationFiled: September 18, 2012Publication date: January 17, 2013Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventor: Sumitomo Electric Industries, Ltd.
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Publication number: 20130015413Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-zXnQ?z, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q? is at least one selected from the group consisting of O, S and Se; 0<x<1; 0<y<1; 0?m?1; 0?n<9; 0<z?2 and 0<a?1.Type: ApplicationFiled: September 14, 2012Publication date: January 17, 2013Applicant: LG CHEM, LTD.Inventors: Cheol-Hee PARK, Tae-Hoon KIM
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Publication number: 20130017447Abstract: An electrode material comprising a LixFeyMzPw04 compound for an electrode for a Li rechargeable battery, wherein 0.90<=x<=1.03, 0.85<=y<=1.0, 0.01<=z<=0.15, 0.90<=w<=1.0, 1.9<=x+y+z<=2.1; wherein M comprises at least one element selected from the group consisting of Mn, Co, Mg, Cr, Zn, Al, Ti, Zr, Nb, Na, and Ni; and wherein the compound comprises a charge transfer resistance increase of less than 20% between room temperature and 0° C.Type: ApplicationFiled: September 24, 2010Publication date: January 17, 2013Inventors: Cécile Tessier, Stephane Levasseur, Philippe Biensan, Julien Breger
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Publication number: 20130015412Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-mAmSb12-n-zXnTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Pd, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt, X is at least one selected from the group consisting of Si, Ga, Ge and Sn, 0<x<1, 0<y<1, 0?m?1, 0?n<9 and 0<z?2.Type: ApplicationFiled: September 14, 2012Publication date: January 17, 2013Applicant: LG CHEM, LTD.Inventors: Cheol-Hee PARK, Tae-Hoon KIM
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Publication number: 20130009108Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-z-bXnTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; 0<x<1; 0<y<1; 0?m?1; 0?n<9; 0<z?2; 0?a?1; 0<b?3; and 0<n+z+b<12.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: LG CHEM, LTD.Inventors: Cheol-Hee PARK, Tae-Hoon KIM
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Publication number: 20130009117Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4Sb12-zSez, where 0<x?0.5 and 0<z?2.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: LG CHEM, LTD.Inventors: Cheol-Hee PARK, Tae-Hoon KIM
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Publication number: 20130009106Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4Sb12-n-zQ?nTez, where Q? is at least one selected from the group consisting of O, S and Se, 0<x?0.5, 0<n?2 and 0<z?2.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: LG CHEM, LTD.Inventors: Cheol-Hee PARK, Tae-Hoon KIM
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Publication number: 20130009112Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-mAmSb12-n-z-pXnQ?pTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q? is at least one selected from the group consisting of O, S and Se; 0<x<1; 0<y<1; 0?m?1; 0?n?7; 0<z?2 and 0<p?2.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: LG CHEM, LTD.Inventors: Cheol-Hee PARK, Tae-Hoon KIM
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Publication number: 20130009116Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4-aSb12-zQz, where Q is at least one selected from the group consisting of O, S, Se and Te, 0<x?0.5, 0<a?1 and 0?z?4.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: LG CHEM, LTD.Inventors: Cheol-Hee PARK, Tae-Hoon KIM
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Publication number: 20130009114Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-zXnTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; 0<x<1; 0<y<1; O?m?1; 0?n<9; 0<z?2 and 0<a?1.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: LG CHEM, LTD.Inventors: Cheol-Hee PARK, Tae-Hoon KIM
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Publication number: 20130009107Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4Sb12-n-zQ?nSez, where Q? is at least one selected from the group consisting of O and S, 0<x?0.5, 0<n?2 and 0?z<2.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: LG CHEM, LTD.Inventors: Cheol-Hee PARK, Tae-Hoon KIM
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Publication number: 20130009113Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-z-bXnQz, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt, X is at least one selected from the group consisting of Si, Ga, Ge and Sn, Q is at least one selected from the group consisting of O, S, Se and Te, 0<x<1, 0?y<1, 0?m?1, 0?a?1, 0?n<9, 0?z?4, 0?b?3 and 0<n+z+b.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: LG CHEM, LTD.Inventors: Cheol-Hee PARK, Tae-Hoon KIM, Deok-Hie PARK, Kyung-Moon KO
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Publication number: 20130009115Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-z-bXnQ?z, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q? is at least one selected from the group consisting of O, S and Se; 0<x<1; 0<y<1; 0?m?1; 0?n<9; 0<z?2; 0?a?1, 0<b?3 and 0<n+z+b<12.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: LG CHEM, LTD.Inventors: Cheol-Hee PARK, Tae-Hoon KIM