Abstract: A method for preparing nanocrystals is disclosed. According to one aspect, the noncrystals include a semiconductor ternary compound consisting of the elements A, B and C. According to another aspect, the nanocrystals include a semiconductor of formula ABC2 optionally coated with a shell, the external portion of which includes a semiconductor of formula ZnS1-xFx, with A representing a metal or metalloid in the oxidation state +I, B representing a metal or metalloid in the oxidation state +III, C representing an element in the oxidation state ?II, F representing an element in the oxidation state ?II and x being a decimal number such that 0?x<1. The disclosure also relates to the prepared nanocrystals and their uses.

Abstract: This invention relates to nanoparticles of kesterite (copper zinc tin sulfide) and copper zinc tin selenide nanoparticles, inks and devices thereof, and processes to prepare same. The nano-particles are useful to for the absorber layer as a p-type semiconductor in a thin film solar cell application.

Abstract: A doping paste includes an inorganic particle including a phosphorus-containing silicon compound and an organic vehicle, wherein a concentration of phosphorus at an interior portion of the inorganic particle is greater than a concentration of phosphorous at a surface of the inorganic particle.

Abstract: A process for preparing a formulation comprising a carbon-deposited lithium metal phosphate, as precursor of a lithium ion battery electrode coating slurry.

Abstract: The present invention provides a positive electrode material for a lithium secondary battery comprising a compound represented by the following Formula 1: LiMn1-xMxP1-yAsyO4??[Formula 1] wherein 0<x?0.1, 0<y?0.1, and M is at least one metal selected from the group consisting of magnesium (Mg), titanium (Ti), nickel (Ni), cobalt (Co), and iron (Fe). Positive electrode materials of the present invention, when used as a positive electrode material in a lithium secondary battery, provides increased discharge potential of the battery due to its high discharge capacity, excellent cycle characteristics and charge/discharge efficiency, and high discharge potential with respect to lithium.

Abstract: The present invention relates to a process for the preparation of compounds of general formula (I) Lia-bMb1Fe1-cMc2Pd-eMe3Ox, wherein Fe has the oxidation state +2 and M1, M2, M3, a, b, c, d, e and x are: M1: Na, K, Rb and/or Cs, M2: Mn, Mg, Al, Ca, Ti, Co, Ni, Cr, V, M3: Si, S, F a: 0.8-1.9, b: 0-0.3, c: 0-0.9, d: 0.8-1.9, e: 0-0.5, x: 1.0-8, depending on the amount and oxidation state of Li, M1, M2, P, M3, wherein compounds of general formula (I) are neutrally charged, comprising the following steps (A) providing a mixture comprising at least one lithium-comprising compound, at least one iron-comprising compound, in which iron has the oxidation state 0, and at least one M1-comprising compound, if present, and/or at least one M2-comprising compound, if present, and/or least one M3-comprising compound, if present, and at least one compound comprising at least one phosphorous atom in oxidation state +5, and (B) heating the mixture obtained in step (A) at a temperature of 100 to 500° C.

Abstract: Proton-conducting hybrid glass and a method for manufacturing the same. The proton-conducting hybrid glass has CsPWA created inside the pores of borosilicate glass. The proton-conducting hybrid glass can be used as an electrolyte for electrochemical devices, such as fuel cells and sensors. When the proton-conducting hybrid glass is used as an electrolyte membrane for a fuel cell, excellent thermal and chemical stability is realized in the range from a high temperature to an intermediate temperature of 120° C. A high proton conductivity of 10?3S/cm or higher and good catalytic activity are realized. In addition, high volumetric stability and excellent moisture retention characteristics in high and intermediate temperature ranges are achieved.

Abstract: Disclosed are an electrode active material, having a composition of SnPx (0.9?x?0.98), an electrode comprising the same, and a lithium secondary battery comprising the electrode. Also disclosed is a method for preparing an electrode active material having a composition of SnPx (0.9?x?0.98), the method comprising the steps of: preparing a mixed solution of a Sn precursor, trioctyl phosphine (TOP) and trioctyl phosphine oxide (TOPO); and heating the solution. The application of the teardrop-shaped single-crystal SnP0-94 particles as an anode active material for lithium secondary batteries can provide an anode having very excellent cycling properties because the active material has a reversible capacity, which is about two times as large as that of a carbon anode, along with a very low irreversible capacity, and it is structurally very stable against Li ion intercalation/deintercalation in a charge/discharge process, indicating little or no change in the volume thereof.

Abstract: Disclosed herein is a method for synthesizing a nanoparticle using a carbene derivative. More specifically, provided is a method for synthesizing a nanoparticle by adding one or more precursors to an organic solvent to grow a crystal, wherein a specific carbene derivative is used as the precursor.

Abstract: Described herein are semiconductor structures comprising laterally varying II-VI alloy layer formed over a surface of a substrate. Further, methods are provided for preparing laterally varying II-VI alloy layers over at least a portion of a surface of a substrate comprising contacting at least a portion of a surface of a substrate within a reaction zone with a chemical vapor under suitable reaction conditions to form a laterally varying II-VI alloy layer over the portion of the surface of the substrate, wherein the chemical vapor is generated by heating at least two II-VI binary compounds; and the reaction zone has a temperature gradient of at least 50-100° C. along an extent of the reaction zone. Also described here are devices such as lasers, light emitting diodes, detectors, or solar cells that can use such semiconductor structures.

Abstract: An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.

Abstract: A thermoelectric material including a compound represented by Formula 1 below: (R1-aR?a)(T1-bT?b)3±y??Formula 1 wherein R and R? are different from each other, and each includes at least one element selected from a rare-earth element and a transition metal, T and T? are different from each other, and each includes at least one element selected from sulfur (S), selenium (Se), tellurium (Te), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), carbon (C), silicon (Si), germanium (Ge), tin (Sn), boron (B), aluminum (Al), gallium (Ga), and indium (In), 0?a?1, 0?b?1, and 0?y<1.

Abstract: A power storage device includes a positive electrode including a positive electrode current collector and a positive electrode active material having an olivine structure which is represented by a structural formula LiFexMe1-xPO4 (Me=Mn, Ni, or Co) (x is greater than 0 and less than 1) over the positive electrode current collector, or a power storage device includes a positive electrode including a positive electrode current collector and a positive electrode active material, and a negative electrode which faces the positive electrode through an electrolyte, where discharging capacitance is greater than or equal to 150 mAh/g and energy density per unit weight is higher than or equal to 500 mWh/g.

Abstract: A semiconductor ceramic includes a BaTiO3-based composition, as a main component, having a perovskite structure represented by general formula AmBO3. Part of the A site Ba is replaced with an alkali metal element, Bi, Ca, Sr, and a rare-earth element. When the molar amounts of Ca and Sr are x and y, respectively, and the total number of moles of the elements constituting the A site is 1 mole, 0.05?x?0.20, 0.02?y?0.12, and 2x+5y?0.7. A PTC thermistor includes a component body formed of the semiconductor ceramic. Even when an alkali metal element and Bi are present, there is provided a lead-free semiconductor ceramic with high reliability in which the surface discoloration is not caused and the degradation of resistance over time can be suppressed even after the application of an electric current for a long time.

Abstract: The present invention provides a metal nitride film that realizes an intended effective work function (for example, a high effective work function) and has EOT exhibiting no change or a reduced change, a semiconductor device using the metal nitride film, and a manufacturing method of the semiconductor device. The metal nitride film according to an embodiment of the present invention contains Ti, Al and N, wherein the metal nitride film has such molar fractions of Ti, Al and N as (N/(Ti+Al+N)) of 0.53 or more, (Ti/(Ti+Al+N)) of 0.32 or less, and (Al/(Ti+Al+N)) of 0.15 or less.

Abstract: The present invention relates to a mayenite-type compound in which a part of Ca of a mayenite-type compound containing Ca, Al and oxygen is substituted by at least one kind of an atom M selected from the group consisting of Be, Mg and Sr, in which the mayenite-type compound has an atom number ratio represented by M/(Ca+M) of from 0.01 to 0.50, and at least a part of free oxygen ions in a mayenite-type crystal structure are substituted by anions of an atom having electron affinity smaller than that of an oxygen atom.

Abstract: The present invention relates to a process for the preparation of compounds of general Formula (I) La?bM1bFe1?cM2cPd?eM3eOx (I), wherein Fe has the oxidation state +2 and M1, M2, M3, a, b, c, d, e and x are: M1: Na, K, Rb and/or Cs, M2: Mn, Mg, Al Ca, Ti Co, Ni, Cr, V, M3: Si, S, F a: 0.8-1.9, b: 0-0.3, c: 0-0.9, 15 d: 0.8-1.9, e: 0-0.5, x: 1.

Abstract: Heteroatom doped silane compounds, e.g., phosphorus-containing silane compounds, are provided. The application also provides methods of producing the heteroatom doped silane compounds from halogen substituted silanes via reaction with a heteroatom-containing nucleophile.

Abstract: Methods of forming a phase change material are disclosed. The method includes forming a chalcogenide compound on a substrate and simultaneously applying a bias voltage to the substrate to alter the stoichiometry of the chalcogenide compound. In another embodiment, the method includes positioning a substrate and a deposition target having a first stoichiometry in a deposition chamber. A plasma is generated in the deposition chamber to form a phase change material on the substrate. The phase change material has a stoichiometry similar to the first stoichiometry. A bias voltage is applied to the substrate to convert the stoichiometry of the phase change material to a second stoichiometry. A phase change material, a phase change random access memory device, and a semiconductor structure are also disclosed.

Abstract: This invention relates generally to organized assemblies of carbon and non-carbon compounds and methods of making such organized structures. In preferred embodiments, the organized structures of the instant invention take the form of nanorods or their aggregate forms. More preferably, a nanorod is made up of a carbon nanotube filled, coated, or both filled and coated by a non-carbon material. This invention is further drawn to the separation of single-wall carbon nanotubes. In particular, it relates to the separation of semiconducting single-wall carbon nanotubes from conducting (or metallic) single-wall carbon nanotubes. It also relates to the separation of single-wall carbon nanotubes according to their chirality and/or diameter.

Abstract: Glass frits, conductive inks and articles having conductive inks applied thereto are described. According to one or more embodiments, glass frits with no intentionally added lead comprise TeO2 and one or more of Bi2O3, SiO2 and combinations thereof. One embodiment of the glass frit includes B2O3, and can further include ZnO, Al2O3 and/or combinations thereof. One embodiment provides for conductive inks which include a glass frit with no intentionally added lead and comprising TeO2 and one or more of Bi2O3, SiO2 and combinations thereof. Another embodiment includes articles with substrates such as semiconductors or glass sheets, having conductive inks disposed thereto, wherein the conductive ink includes glass frits having no intentionally added lead.

Abstract: A method of depositing a kesterite film which includes a compound of the formula: Cu2?xZn1+ySn(S1?zSez)4+q, wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1. The method includes contacting hydrazine, a source of Cu, and a source of at least one of S and Se forming solution A; contacting hydrazine, a source of Sn, a source of at least one of S and Se, and a source of Zn forming dispersion B; mixing solution A and dispersion B under conditions sufficient to form a dispersion which includes Zn-containing solid particles; applying the dispersion onto a substrate to form a thin layer of the dispersion on the substrate; and annealing at a temperature, pressure, and length of time sufficient to form the kesterite film. An annealing composition and a photovoltaic device including the kesterite film formed by the above method are also provided.

Abstract: A method for synthesis of high quality colloidal nanoparticles using comprises a high heating rate process. Irradiation of single mode, high power, microwave is a particularly well suited technique to realize high quality semiconductor nanoparticles. The use of microwave radiation effectively automates the synthesis, and more importantly, permits the use of a continuous flow microwave reactor for commercial preparation of the high quality colloidal nanoparticles.

Abstract: A target adapted for a sputtering process for making a compound film layer of a thin film solar cell includes a composition having a formula of CuB1-xCxSeyS2-y, wherein B and C are independently selected from Group IIIA elements; x ranges from 0 to 1; and y ranges from 0 to 2. A thin film solar cell made by sputtering using the target and a method of making the thin film solar cell are also disclosed. Specifically, the thin film solar cell includes a compound film formed with substantially columnar grains. The energy gap of the compound film layer may be varied using different work pressures during a sputtering process. At least one interlayer may be included in the compound film layer to control the size of columnar grains in the compound film layer.

Abstract: The invention relates to materials for use as electrodes in an alkali-ion secondary (rechargeable) battery, particularly a lithium-ion battery. The invention provides transition-metal compounds having the ordered-olivine, a modified olivine, or the rhombohedral NASICON structure and the polyanion (PO4)3? as at least one constituent for use as electrode material for alkali-ion rechargeable batteries.

Abstract: The present invention relates to a Process for the preparation of compounds of general formula (I), Lia-bM1bFe1-cM2cPd-eM3eOx, wherein M1, M2, M3, a, b, c, d and e: M1: Na, K, Rb and/or Cs, M2: Mn, Mg, Ca, Ti, Co, Ni, Cr, V, M3: Si, S, a: 0.8-1.9, b: 0-0.3, c: 0-0.9, d: 0.8-1.9, e: 0-0.5, x: 1.

Abstract: This invention relates to processes for compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. In particular, this invention relates to molecular precursor compounds and precursor materials for preparing photovoltaic layers including CAIGAS.

Abstract: A LiCoO2-containing powder. and a method for preparing a LiCoO2-containing powder, includes LiCoO2 having a stoichiometric composition via heat treatment of a lithium cobalt oxide and a lithium buffer material to make an equilibrium of a lithium chemical potential therebetween; the lithium buffer material which acts as a Li acceptor or a Li donor to remove or supplement a Li-excess or a Li-deficiency, the lithium buffer material coexisting with the stoichiometric lithium metal oxide. Also an electrode includes the LiCoO2-containing powder as an active material, and a rechargeable battery includes the electrode.

Abstract: The p- or n-conductive semiconductor material comprises a compound of the general formula (I) SnaPb1?a?(x1+ . . . +xn)A1x1 . . . Anxn(Te1?p?q?rSepSqXr)1+z??(I) where 0.05<a<1 n?1 where n is the number of chemical elements different than Sn and Pb in each case independently 1 ppm?x1 . . . xn?0.05 A1 . . . An are different from one another and are selected from the group of the elements Li, Na, K, Rb, Cs, Mg, Ca, Y, Ti, Zr, Hf, Nb, Ta, Cr, Mn, Fe, Cu, Ag, Au, Ga, In, Tl, Ge, Sb, Bi X is F, Cl, Br or I 0?p?1 0?q?1 0?r?0.01 ?0.01?z?0.01 with the condition that p+q+r?1 and a+x1+ . . . +xn?1.

Abstract: The invention is directed to CVD methods and systems that can be utilized to form nanostructures. Exceptionally high product yields can be attained. In addition, the products can be formed with predetermined particle sizes and morphologies and within a very narrow particle size distribution. The systems of the invention include a CVD reactor designed to support the establishment of a convective flow field within the reactor at the expected carrier gas flow rates. In particular, the convective flow field within the reactor can include one or more flow vortices. The disclosed invention can be particularly beneficial for forming improved thermoelectric materials with high values for the figure of merit (ZT).

Abstract: Embodiments of the present invention are directed to methods of producing PbSexY1-x alloys and methods of producing PbSe/PbY core/shell nanowires. The method of producing PbSexY1-x alloys comprise providing PbSe nanowires, producing a PbY solution where Y?S or Te, adding the PbSe nanowires to an growth solution, and producing PbSexY1-x, nanowire alloys by adding the PbY solution to the heated growth solution comprising PbSe nanowires.

Abstract: The invention relates to materials for use as electrodes in an alkali-ion secondary (rechargeable) battery, particularly a lithium-ion battery. The invention provides transition-metal compounds having the ordered-olivine, a modified olivine, or the rhombohedral NASICON structure and the polyanion (PO4)3? as at least one constituent for use as electrode material for alkali-ion rechargeable batteries.

Abstract: The present invention relates to a process for the preparation of compounds of general formula (I): Lia?bM1bV2-cM2c(PO4)x; wherein M1, M2, a, b, c and x have the following meanings: M1: Na, K, Rb and/or Cs, M2: Ti, Zr, Nb, Cr, Mn, Fe, Co, Ni, Al, Mg and/or Sc, a: 1.5-4.5, b: 0-0.6, c: 0-1.98 and x: number to equalize the charge of Li and V and M1 and/or M2, if present, wherein a?b is >0, to a compound according to general formula (I) as defined above, to spherical agglomerates and/or particles comprising at least one compound of general formula (I) as defined above, to the use of such a compound for the preparation of a cathode of a lithium ion battery or an electrochemical cell, and to a cathode for a lithium ion battery, comprising at least one compound as defined above.

Abstract: To provide a cathode active material for a lithium secondary battery, which is low in gas generation and has high safety and excellent durability for charge and discharge cycles even at a high charge voltage. A process for producing a lithium-containing composite oxide represented by the formula LipLqNxMyOzFa (wherein L is at least one element selected from the group of B and P, N is at least one element selected from the group consisting of Co, Mn and Ni, M is at least one element selected from the group consisting of Al, alkaline earth metal elements and transition metal elements other than N, 0.9?p?1.1, 1.0?q<0.03, 0.97?x<1.00, 0?y?0.03, 1.9?z?2.1, q+x+y=1 and 0?a?0.

Abstract: An active material for a nonaqueous electrolyte secondary battery includes first particles and second particles provided to coat the first particles so as to be scattered on the surfaces of the first particles. The circularity of the first particles coated with the second particles is 0.800 to 0.950, and the ratio r1/r2 of the average particle diameter r1 of the second particles to the average particle diameter r2 of the first particles is 1/20 to 1/2.

Abstract: The present invention relates to a process for the preparation of compounds of general formula (I) Lia-bM1bV2-cM2c(PO4)x (I) with M1: Na, K, Rb and/or Cs, M2: Ti, Zr, Nb, Cr, Mn, Fe, Co, Ni, Al, Mg and/or Sc, a: 1.5-4.5, b: 0-0.6, c: 0-1.98 and x: number to equalize the charge of Li and V and M1 and/or M2, if present, wherein a?b is >0, by providing an essentially aqueous mixture comprising at least one lithium-comprising compound, at least one vanadium-comprising compound in which vanadium has the oxidation state +5 and/or +4, and at least one M1-comprising compound, if present, and/or at least one M2-comprising compound, if present, and at least one reducing agent which is oxidized to at least one compound comprising at least one phosphorous atom in oxidation state +5, drying and calcining.

Abstract: Provided is a cathode material for a lithium secondary battery composed of an aggregate of Li-A-O composite oxide particles (wherein A represents one or more metal elements selected from Mn, Fe, Co and Ni), wherein the lithium composite oxide contains 20 to 100 ppm (by mass) of P, and the total content of impurity elements excluding essential components is 2000 ppm or less. Also provided is a manufacturing method of such a cathode material for a lithium secondary battery including the steps of suspending lithium carbonate in water and thereafter introducing a metallic salt solution of one or more metal elements selected from Mn, Fe, Co and Ni in the lithium carbonate suspension, adding a small amount of phosphoric acid so that the P content in the Li-A-O composite oxide particles will be 20 to 100 ppm (by mass), and forming an aggregate of Li-A-O composite oxide particles containing 20 to 100 ppm (by mass) of P by filtering, cleansing, drying and thereafter oxidizing the obtained carbonate.

Abstract: A nanostructure, being either an Inorganic Fullerene-like (IF) nanostructure or an Inorganic Nanotube (INT), having the formula A1?x-Bx-chalcognide are described. A being a metal or transition metal or an alloy of metals and/or transition metals, B being a metal or transition metal B different from that of A and x being ?0.3. A process for their manufacture and their use for modifying the electronic character of A-chalcognide are described.

Abstract: The invention provides a novel n-type thermoelectric conversion material which comprises low-toxic and abundant elements, and has excellent heat-resistance, chemical durability and the like, as well as high thermoelectric conversion efficiency, the thermoelectric conversion material comprises a metal oxynitride thermoelectric conversion material which has a composition represented by formula Ti1-xAxOyNz (wherein A is at least one element selected from the group consisting of transition metals of the 4th and 5th periods of the periodic table, and 0?x?0.5, 0.5?y?2.0, 0.01?z?0.6), and has an absolute value of thermoelectric power of at least 30 ?V/K at 500° C. or above, and a novel n-type thermoelectric conversion material, a thermoelectric conversion element and a thermoelectric conversion module comprising the above metal oxynitride can also be provided.

Abstract: 12CaO.7Al2O3 polycrystal having high conductivity is provided. The conductivity of the 12CaO.7Al2O3 polycrystal becomes 100 S/cm or more by controlling the nitrogen content in the 12CaO.7Al2O3 polycrystal within a range of 0.3 to 1.1 wt %, and that the conductivity becomes 150 S/cm or more by controlling the nitrogen content within a range of 0.5 to 0.9 wt %.

Abstract: A thermoelectric material containing a dichalcogenide compound represented by Formula 1 and having low thermoelectric conductivity and high Seebeck coefficient: RaTbX2?nYn??(1) wherein R is a rare earth element, T includes at least one element selected from the group consisting of Group 1 elements, Group 2 elements, and a transition metal, X includes at least one element selected from the group consisting of S, Se, and Te, Y is different from X and includes at least one element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga and In, a is greater than 0 and less than or equal to 1, b is greater than or equal to 0 and less than 1, and n is greater than or equal to 0 and less than 2.

Abstract: A low-cost filled skutterudite for advanced thermoelectric applications is disclosed. The filled skutterudite uses the relatively low-cost mischmetal, either alone or in addition to rare earth elements, as a starting material for guest or filler atoms.

Abstract: A method of producing a proton conducting material, comprising adding a pyrophosphate salt to a solvent to produce a dissolved pyrophosphate salt; adding an inorganic acid salt to a solvent to produce a dissolved inorganic acid salt; adding the dissolved inorganic acid salt to the dissolved pyrophosphate salt to produce a mixture; substantially evaporating the solvent from the mixture to produce a precipitate; and calcining the precipitate at a temperature of from about 400° C. to about 1200° C.

Abstract: Glass frits, conductive inks and articles having conductive inks applied thereto are described. According to one or more embodiments, glass frits with no intentionally added lead comprise TeO2 and one or more of Bi2O3, SiO2 and combinations thereof. One embodiment of the glass frit includes B2O3, and can further include ZnO, Al2O3 and/or combinations thereof. One embodiment provides for conductive inks which include a glass frit with no intentionally added lead and comprising TeO2 and one or more of Bi2O3, SiO2 and combinations thereof. Another embodiment includes articles with substrates such as semiconductors or glass sheets, having conductive inks disposed thereto, wherein the conductive ink includes glass frits having no intentionally added lead.

Abstract: An electrode formed using a transparent conductive oxide is likely to be crystallized by heat treatment performed in the manufacturing process of a semiconductor device. In the case of a thin film element using an electrode having a significantly uneven surface due to crystallization, a short circuit is likely to occur and thus reliability of the element is degraded. An object is to provide a light-transmitting conductive oxynitride which is not crystallized even if subjected to heat treatment and a manufacturing method thereof. It is found that an oxynitride containing indium, gallium, and zinc, to which hydrogen atoms are added as impurities, is a light-transmitting conductive film which is not crystallized even if heated at 350° C. and the object is achieved.

Abstract: The present invention relates to pulverulent compounds of the formula NibM1cM2d(O)x(OH)y(SO4)z, a process for the preparation thereof and the use thereof as precursors for the preparation of active materials for lithium secondary batteries.

Abstract: A lithium insertion-type positive electrode material based on an orthosilicate structure and electrical generators and variable optical transmission devices of this material are provided.

Abstract: A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

Abstract: A method for the synthesis of compounds of the formula C—LixM1?yM?y(XO4)n, where C represents carbon cross-linked with the compound LixM1?yM?y(XO4)n, in which x, y and n are numbers such as 0?x?2, 0?y?0.6, and 1?n?1.5, M is a transition metal or a mixture of transition metals from the first period of the periodic table, M? is an element with fixed valency selected among Mg2+, Ca2+, Al3+, Zn2+ or a combination of these same elements and X is chosen among S, P and Si, by bringing into equilibrium, in the required proportions, the mixture of precursors, with a gaseous atmosphere, the synthesis taking place by reaction and bringing into equilibrium, in the required proportions, the mixture of the precursors, the procedure including at least one pyrolysis step of the carbon source compound.

Abstract: Methods of forming a phase change material are disclosed. The method includes forming a chalcogenide compound on a substrate and simultaneously applying a bias voltage to the substrate to alter the stoichiometry of the chalcogenide compound. In another embodiment, the method includes positioning a substrate and a deposition target having a first stoichiometry in a deposition chamber. A plasma is generated in the deposition chamber to form a phase change material on the substrate. The phase change material has a stoichiometry similar to the first stoichiometry. A bias voltage is applied to the substrate to convert the stoichiometry of the phase change material to a second stoichiometry. A phase change material, a phase change random access memory device, and a semiconductor structure are also disclosed.