Fluorine Compound Containing Patents (Class 252/79.3)
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Patent number: 7241920Abstract: An improved aqueous soluble surfactant which has particular utility for incorporating in etchants for semiconductor devices is provided. The surfactant comprises a combination of a linear perfluorocarboxylic acid, a cyclic amine and an aliphatic alcohol.Type: GrantFiled: May 27, 2006Date of Patent: July 10, 2007Assignee: General Chemical Performance Products, LLCInventors: Erik J. Mori, Brian Hong, James Craig
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Patent number: 7235188Abstract: The present invention relates to dilute aqueous solutions containing phosphoric acid and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous solutions. The solution according to the invention may advantageous contain an alkaline compound, one or more other acid compounds, and/or a fluoride-containing compound and may optionally contain additional components such as organic solvents, chelating agents, amines, and/or surfactants.Type: GrantFiled: October 21, 2003Date of Patent: June 26, 2007Assignee: EKC Technology, Inc.Inventors: Jerome Daviot, Christopher Reid, Douglas Holmes
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Patent number: 7223352Abstract: A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source, an aluminum ion complexing agent and, optionally, corrosion inhibitor. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the post-etch residue and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having ashed or unashed aluminum/SiN/Si post-etch residue thereon.Type: GrantFiled: October 31, 2002Date of Patent: May 29, 2007Assignee: Advanced Technology Materials, Inc.Inventors: Michael B. Korzenski, Eliodor G. Ghenciu, Chongying Xu, Thomas H. Baum
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Patent number: 7192860Abstract: Silicon oxide etching solutions containing the product of at least one bifluoride source compound dissolved in a solvent consisting of at least one carboxylic acid, and further comprising from about 0.5 to about 3 percent by solution weight of hydrofluoric acid and from about 1 to about 5 percent by solution weight of water, wherein the total concentration of bifluoride source compound is between about 1.25 and about 5.0 moles per kilogram of solvent. Methods for selectively removing silicon oxides and metal silicates from metal surfaces are also disclosed.Type: GrantFiled: April 2, 2004Date of Patent: March 20, 2007Assignee: Honeywell International Inc.Inventors: John A. McFarland, Michael A. Dodd, Wolfgang Sievert
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Patent number: 7168436Abstract: The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1–100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas.Type: GrantFiled: November 12, 2003Date of Patent: January 30, 2007Assignee: Central Glass Company, LimitedInventors: Isamu Mouri, Tetsuya Tamura, Mitsuya Ohashi
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Patent number: 7153449Abstract: The present invention relates to a solution and to a method of treating copper surfaces, the copper surfaces being brought into contact with an acidic treatment liquid which contains hydrogen peroxide and at least one five-membered heterocyclic compound as well as additionally at least one microstructure modifying agent selected from the group comprising thioles A, disulfides B, sulfides C and thioamides D having the following respective general formulae: wherein R1 and R2=alkyl, alkenyl, aryl, aralkyl, especially benzyl, cycloalkyl and the derivatives thereof and R3=R1, R1—O, R1—S, amino or substituted amino, wherein R1 and R2 may especially be phenyl or substituted phenyl.Type: GrantFiled: July 6, 2001Date of Patent: December 26, 2006Assignee: Atotech Deutschland GmbHInventors: Uwe Hauf, Harry Fuerhaupter, Alexey Stiop, Udo Grieser
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Patent number: 7138364Abstract: A chamber-cleaning gas and an etching gas used for a silicon-containing film according to the present invention comprise a perfluoro cyclic ether having 2 to 4 carbon atoms which are ether-linked with carbon atoms. The chamber-cleaning gas and the etching gas hardly generate a harmful waste gas, such as CF4, which is one of the causes for global warming so that they are good for environment. Further, they are a non-toxic gas or a volatile liquid, and are easy to use and are excellent in treatment of waste gas. Additionally, the chamber-cleaning gas of the present invention has an excellent cleaning rate.Type: GrantFiled: January 28, 2003Date of Patent: November 21, 2006Assignees: Asahi Glass Company, Limited, Anelva Corporation, Ulvac, Inc., Kanto Denka Kogyo Co., Ltd., Sanyo Electric Co., Ltd., Sony Corporation, Daikin Industries, Ltd., Hitachi Kokusai Electric Inc., Fujitsu Limited, Matsushita Electric Industrial Co., Ltd., Renesas Technology Corp., National Institute of Advanced Industrial Science and TechnologyInventors: Yutaka Ohira, Yuki Mitsui, Taisuke Yonemura, Akira Sekiya
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Patent number: 7138342Abstract: Process for combined chemical cleaning and etching of parts made of aluminum and/or aluminum alloys including: (a) providing a cleaning and etching solution including 5–30 grams/liter of phosphoric acid; 5–30 grams/liter of hydrogen fluoride; 120–220 grams/liter of sulfamic acid; 55–85.0 grams/liter of glycol ether; and balance water; (b) contacting the parts with the solution for a time sufficient to achieve the desired amount of cleaning and etching; (c) periodically measuring the etching rate of the solution; (d) when the etching rate is below the required minimum rate, adding sufficient hydrogen fluoride to restore the etching rate above the required minimum rate; and (e) periodically adding sufficient sulfamic acid to prevent the formation of scale made of hydrated aluminum fluoride.Type: GrantFiled: October 31, 2003Date of Patent: November 21, 2006Assignee: The Boeing CompanyInventors: Cathleen H. Chang, Terry C. Tomt
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Patent number: 7132058Abstract: A tungsten CMP solution for planarizing semiconductor wafers includes a primary oxidizer having a sufficient oxidation potential for oxidizing tungsten metal to tungsten oxide; and the tungsten CMP solution has a static etch rate for removing the tungsten metal. A secondary oxidizer lowers the static etch rate of the tungsten CMP solution. The secondary oxidizer is selected from the group consisting of bromates and chlorates. Optionally the tungsten CMP contains 0 to 50 weight percent abrasive particles; and it contains a balance of water and incidental impurities.Type: GrantFiled: January 24, 2003Date of Patent: November 7, 2006Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Terence M. Thomas, Stephan De Nardi, Wade Godfrey
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Patent number: 7097783Abstract: A process for detecting an aluminum-based material deposited onto a titanium-based gas turbine engine component during engine operation is disclosed. The process comprises immersing at least a portion of the titanium-based component, which has been subjected to engine operation, into an acid solution to form an etched component. The acid solution comprises sodium fluoride, sulphuric acid and water. The etched component may then be removed from the solution and visually inspected for dark areas in contrast to light areas, the dark areas indicating deposited aluminum-based material.Type: GrantFiled: July 17, 2003Date of Patent: August 29, 2006Assignee: General Electric CompanyInventor: Peter Wayte
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Patent number: 7083741Abstract: A device and process for the wet-chemical treatment of silicon using an etching liquid that contains water, nitric acid and hydrofluoric acid. The etching liquid is activated by introducing nitrogen oxide (NOx) into the etching liquid, before being used for the wet-chemical treatment of silicon. The device consists of a first vessel in which silicon is subjected to a wet-chemical treatment with the aid of an etching liquid, a second vessel in which fresh etching liquid is held ready, and a connecting line between the first vessel and the second vessel, through which nitrogen oxides (NOx) formed in the first vessel during the wet-chemical treatment are passed to the second vessel.Type: GrantFiled: October 15, 2003Date of Patent: August 1, 2006Assignee: Siltronic AGInventors: Maximilian Stadler, Günter Schwab, Helmut Franke
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Patent number: 7052627Abstract: An etching solution which exhibits etching rates for both of a thermally oxidized film (THOX) and a boron-phosphorus-glass film (BPSG) of 100 ?/min or less at 25° C., and an etching rate ratio: etching rate for BPSG/etching rate for a thermally oxidized film (THOX) of 1.5 or less.Type: GrantFiled: November 22, 1999Date of Patent: May 30, 2006Assignee: Daikin Industries, Ltd.Inventors: Takehiko Kezuka, Makoto Suyama, Mitsushi Itano
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Patent number: 7022254Abstract: Non-chromate solutions for treating and/or etching metals, particularly, aluminum, aluminum alloys, steel and titanium, and method of applying same wherein the solutions include either a titanate or titanium dioxide as a “drop-in replacement” for a chromium-containing compound in a metal surface etching solution that otherwise would contain chromium.Type: GrantFiled: October 6, 2003Date of Patent: April 4, 2006Assignee: The United States of America as represented by the Secretary of the NavyInventors: Wayne C. Tucker, Maria G. Medeiros, Richard Brown
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Patent number: 7018924Abstract: CMP slurries for oxide film and a method for forming a metal line contact plug of a semiconductor device are described herein. When a polishing process of a multi-layer film is performed by using the disclosed CMP slurry for oxide film including an HXOn compound (wherein n is an integer from 1 to 4), a stable landing plug poly can be formed by preventing step differences by reducing interlayer polishing speed differences.Type: GrantFiled: June 25, 2003Date of Patent: March 28, 2006Assignee: Hynix Semiconductor Inc.Inventors: Jong Goo Jung, Sang Ick Lee
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Patent number: 7018560Abstract: An aqueous polishing composition comprises a corrosion inhibitor for limiting removal of an interconnect metal with an acidic pH. The composition includes an organic-containing ammonium salt formed with R1, R2, R3 and R4 are radicals, R1 has a carbon chain length of 2 to 15 carbon atoms. The organic-containing ammonium salt has a concentration that accelerates TEOS removal and decreases removal of at least one coating selected from the group consisting of SiC, SiCN, Si3N4 and SiCO.Type: GrantFiled: August 5, 2003Date of Patent: March 28, 2006Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Zhendong Liu, John Quanci
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Patent number: 7001533Abstract: Non-chromate solutions for treating and/or etching metals, particularly, aluminum, aluminum alloys, steel and titanium, and method of applying same wherein the solutions include either a titanate or titanium dioxide as a “drop-in replacement” for a chromium-containing compound in a metal surface etching solution that otherwise would contain chromium.Type: GrantFiled: October 6, 2003Date of Patent: February 21, 2006Assignee: The United States of America as represented by the Secretary of the NavyInventors: Wayne C. Tucker, Maria G. Medeiros, Richard Brown
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Patent number: 6908569Abstract: A method of removing ruthenium silicide from a substrate surface which comprises exposing the ruthenium silicide surface to a solution containing chlorine and fluorine containing chemicals. In particular, said solution is designed to react with said ruthenium silicide film such that water-soluble reaction products are formed.Type: GrantFiled: April 23, 2003Date of Patent: June 21, 2005Assignee: Micron Technology, Inc.Inventors: Brenda D. Kraus, Michael T. Andreas
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Patent number: 6905632Abstract: An aqueous dispersion is used in the chemical mechanical polishing of surfaces, particularly oxidic surfaces, such as silicon dioxide. The aqueous dispersion contains a powder of pyrogenically produced silicon dioxide doped with 0.01 and 3 wt. % aluminium oxide, relative to the total amount of powder, said powder having an average particle diameter in the dispersion of not more than 0.1 ?m.Type: GrantFiled: January 31, 2003Date of Patent: June 14, 2005Assignee: Degussa AGInventors: Wolfgang Lortz, Christoph Batz-Sohn, Gabriele Perlet, Werner Will
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Patent number: 6902626Abstract: A liquid etchant and a method for roughening a copper surface each capable of providing copper with a roughened surface increased in acid resistance regardless of a chlorine ion in a short period of time, to thereby ensure firm adhesion between a copper conductive pattern and an outer layer material during manufacturing of a printed circuit board, resulting in the manufacturing being highly simplified. The liquid etchant includes a main component containing an oxo acid such as sulfuric acid and a peroxide such as hydrogen peroxide. Also, the liquid etchant includes an auxiliary component containing a tetrazole such as 5-aminotetrazole or the like, or a 1,2,3-azole. The liquid etchant permits a copper surface to be roughened in an acicular manner.Type: GrantFiled: October 29, 2003Date of Patent: June 7, 2005Assignee: Ebara Densan Ltd.Inventors: Yoshihiko Morikawa, Kazunori Senbiki, Nobuhiro Yamazaki
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Patent number: 6899865Abstract: An oral composition comprises water and a cyclic carbonate compound in a certain ratio. In this case, the ratio of the water and the cyclic carbonate compound is such that when the water and the cyclic carbonate compound are mixed together the mixture goes into a 2-phase state. Moreover, the oral composition may further comprise a polyol, and in this case the ratio of the water, the cyclic carbonate compound and the polyol is such that when the water, the cyclic carbonate compound and the polyol are mixed together the mixture goes into a 2-phase state. The oral composition has an excellent effect of removing accumulations on dental surfaces or between teeth through a physico-chemical action, rather than relying purely on a mechanical action.Type: GrantFiled: December 4, 2002Date of Patent: May 31, 2005Assignee: Kao CorporationInventor: Yoshiyuki Eshita
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Patent number: 6896826Abstract: A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.Type: GrantFiled: October 23, 2001Date of Patent: May 24, 2005Assignee: Advanced Technology Materials, Inc.Inventors: William A. Wojtczak, Ma. Fatima Seijo, David Bernhard, Long Nguyen
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Patent number: 6890452Abstract: Novel aqueous, acid etch solutions comprising a fluorinated surfactant are provided. The etch solutions are used with a wide variety of substrates, for example, in the etching of silicon oxide-containing substrates.Type: GrantFiled: November 8, 2002Date of Patent: May 10, 2005Assignee: 3M Innovative Properties CompanyInventors: Michael J. Parent, Patricia M. Savu, Richard M. Flynn, Zhongxing Zhang, William M. Lamanna, Zai-Ming Qiu, George G. I. Moore
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Patent number: 6887137Abstract: Slurries for chemical mechanical polishing (CMP) are provided including a high planarity slurry and high selectivity ratio slurry. A high planarity slurry includes at least one kind of metal oxide abrasive particle and an anionic polymer passivation agent having a first concentration. A high selectivity ratio slurry includes at least one kind of the metal oxide abrasive particle, the passivation agent in a second concentration that is less than the first concentration of the passivation agent for the high planarity slurry, one of a quaternary amine and the salt thereof, and a pH control agent. The high selectivity ratio slurry has a pH in a range of about over an isoelectric point of a polishing target layer and less than an isoelectric point of a polishing stopper. In addition, a CMP method using the CMP slurries having high planarity and high selectivity ratio is provided.Type: GrantFiled: February 28, 2003Date of Patent: May 3, 2005Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-dong Lee, Bo-un Yoon, Yong-pil Han
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Patent number: 6884338Abstract: The present invention provides methods of polishing and/or cleaning copper interconnects using bis(perfluoroalkanesulfonyl) imide acids or copper tris(perfluoroalkanesulfonyl) methide acids compositions.Type: GrantFiled: December 16, 2002Date of Patent: April 26, 2005Assignee: 3M Innovative Properties CompanyInventors: Susrut Kesari, William M. Lamanna, Michael J. Parent, Lawrence A. Zazzera
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Patent number: 6875371Abstract: An etchant including C2HxFy, where x is an integer from two to five, inclusive, where y is an integer from one to four, inclusive, and where x plus y equals six etches doped silicon dioxide with selectivity over both undoped silicon dioxide and silicon nitride. Thus, undoped silicon dioxide and silicon nitride may be employed as etch stops in dry etch processes which utilize the C2HxFy-containing etchant. C2HxFy may be employed as either a primary etchant or as an additive to another etchant or etchant mixture.Type: GrantFiled: November 13, 2000Date of Patent: April 5, 2005Assignee: Micron Technology, Inc.Inventors: Kei-Yu Ko, Li Li, Guy T. Blalock
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Patent number: 6858124Abstract: The present invention provides methods of polishing and/or cleaning copper interconnects using sulfonic acid compositions.Type: GrantFiled: December 16, 2002Date of Patent: February 22, 2005Assignee: 3M Innovative Properties CompanyInventors: Lawrence A. Zazzera, Michael J. Parent, William M. Lamanna, Susrut Kesari
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Patent number: 6833084Abstract: The present invention provides an etching composition which includes a polyhydric alcohol in combination with two inorganic acids. Preferably the etching composition of the present invention is a mixture of a glycol, nitric acid and hydrofluoric acid, with propylene glycol being preferred. The etching composition of the present invention achieves a selectivity of greater than 70:1, doped material to undoped material. The present invention provides an etching formulation which has increased selectivity of doped polysilicon to undoped polysilicon and provides an efficient integrated circuit fabrication process without requiring time consuming and costly processing modifications to the etching apparatus or production apparatus.Type: GrantFiled: April 5, 1999Date of Patent: December 21, 2004Assignee: Micron Technology, Inc.Inventors: Garry A. Mercaldi, Donald L. Yates
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Patent number: 6821352Abstract: A composition for removing etching residue and a method using same are disclosed herein. In one aspect, there is provided a method for removing etching residue from a substrate comprising: contacting the substrate with a composition comprising water, an organic dicarboxylic acid, a buffering agent, a fluorine source, and optionally a water miscible organic solvent.Type: GrantFiled: November 26, 2003Date of Patent: November 23, 2004Assignee: Air Products and Chemicals, Inc.Inventors: Roberto John Rovito, David Barry Rennie, Dana L. Durham
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Patent number: 6821452Abstract: An etching agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.Type: GrantFiled: June 27, 2003Date of Patent: November 23, 2004Inventors: Hirohisa Kikuyama, Masayuki Miyashita, Tatsuhiro Yabune, Tadahiro Ohmi
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Patent number: 6818148Abstract: A resist composition is provided comprising a fluorochemical surfactant which functions to reduce the contact angle of a coating of the resist composition with water or an aqueous base developer as the amount of the fluorochemical surfactant increases. The resist composition forms a coating having a thickness uniformity, free of defects, and wettable with an aqueous base developer when applied onto a substrate, and has a good storage stability in that particles do not increase during storage in solution form.Type: GrantFiled: September 22, 1999Date of Patent: November 16, 2004Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Satoshi Watanabe, Toyohisa Sakurada, Yoshitaka Yanagi, Shigehiro Nagura, Toshinobu Ishihara
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Patent number: 6811714Abstract: A method of manufacturing a micromachined component includes using a first liquid to etch a first layer (140) located underneath a second layer (150), exposing the second layer to a second liquid that is inorganic and miscible in carbon dioxide, and supercritical drying the micromachined component with carbon dioxide.Type: GrantFiled: October 6, 2000Date of Patent: November 2, 2004Assignee: Freescale Semiconductor, Inc.Inventors: Jonathan F. Gorrell, Gordana S. Nielsen
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Patent number: 6800218Abstract: An abrasive free formulation for chemical mechanical polishing and method for using the formulation for polishing copper and related materials. The abrasive free formulation has a high removal rate on copper and a low removal rate on barrier material. The abrasive free formulation comprises at least an oxidizing agent and an activating agent.Type: GrantFiled: August 23, 2001Date of Patent: October 5, 2004Assignee: Advanced Technology Materials, Inc.Inventors: Ying Ma, Michael Jones, Thomas H. Baum, Deepak Verma, David Bernhard
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Patent number: 6793738Abstract: A method for preparing a solution for treating an article, a treatment solution made thereby, and a method for treating an article with the solution are presented with, for example, the treatment method comprising providing a quantity of treatment solution, the treatment solution comprising an acid having the formula HxAF6, wherein A is selected from the group consisting of Si, Ge, Ti, Zr, Al, and Ga, and x is in the range from about 1 to about 6; determining a concentration of free acid contaminant in the treatment solution; and removing the concentration of free acid contaminant.Type: GrantFiled: March 28, 2002Date of Patent: September 21, 2004Assignee: General Electric CompanyInventors: Lawrence Bernard Kool, James Anthony Ruud, Ralph James Carl, Jr., Gabriel Kwadwo Ofori-Okai
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Patent number: 6783695Abstract: A method for removing organometallic and organosilicate residues remaining after a dry etch process from semiconductor substrates. The substrate is exposed to a conditioning solution of a fluorine source, a non-aqueous solvent, a complementary acid, and a surface passivation agent. The fluorine source is typically hydrofluoric acid. The non-aqueous solvent is typically a polyhydric alcohol such as propylene glycol. The complementary acid is typically either phosphoric acid or hydrochloric acid. The surface passivation agent is typically a carboxylic acid such as citric acid. Exposing the substrate to the conditioning solution removes the remaining dry etch residues while minimizing removal of material from desired substrate features.Type: GrantFiled: August 23, 2000Date of Patent: August 31, 2004Assignee: Micron Technology, Inc.Inventors: Kevin J. Torek, Donald L. Yates
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Patent number: 6783694Abstract: An etching method for use in integrated circuit fabrication includes providing a metal nitride layer on a substrate assembly, providing regions of cobalt silicide on first portions of the metal nitride layer, and providing regions of cobalt on second portions of the metal nitride layer. The regions of cobalt and the second portions of the metal nitride layer are removed with at least one solution including a mineral acid and a peroxide. The mineral acid may be selected from the group including HCl, H2SO4, H3PO4, HNO3, and dilute HF (preferably the mineral acid is HCl) and the peroxide may be hydrogen peroxide. Further, the removal of the regions of cobalt and the second portions of the metal nitride layer may include a one step process or a two step process. In the one step process, the regions of cobalt and the second portions of the metal nitride layer are removed with a single solution including the mineral acid and the peroxide.Type: GrantFiled: April 26, 2000Date of Patent: August 31, 2004Assignee: Micron Technology, Inc.Inventors: Whonchee Lee, Yongjun Jeff Hu
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Patent number: 6780783Abstract: A method of etching a low dielectric constant material with an aqueous solution of hydrofluoric acid and hydrochloric acid. The etching solution is particularly useful on low dielectric constant materials that are water repulsive or hydrophobic. The weight ratio of hydrofluoric acid to hydrochloric acid in the aqueous solution ranges from 1:3 to 4:1.Type: GrantFiled: August 29, 2001Date of Patent: August 24, 2004Assignee: Taiwan SEmiconductor Manufacturing Co., Ltd.Inventors: Jane-Bai Lai, Pei-Fen Chou
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Patent number: 6755989Abstract: A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.Type: GrantFiled: March 27, 2001Date of Patent: June 29, 2004Assignee: Advanced Technology Materials, Inc.Inventors: William A. Wojtczak, Ma. Fatima Seijo, David Bernhard, Long Nguyen
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Patent number: 6753001Abstract: A gel composition for use in etching the surfaces of teeth in preparation for prophylaxis, repair, or restoration, comprising an aqueous solution of an effective quantity of an acid; and a colloidal silica sol, wherein the silica portion of the sol comprises from about 3 to about 20 weight percent of the total etchant composition.Type: GrantFiled: January 21, 2003Date of Patent: June 22, 2004Assignee: Pentron Clinical Technologies, LLCInventors: Weitao Jia, Shuhua Jin
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Patent number: 6749770Abstract: A method of etching a platinum electrode layer disposed on a substrate to produce a semiconductor device including a plurality of platinum electrodes. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the platinum electrode layer by employing a plasma of an etchant gas comprising nitrogen and a halogen (e.g. chlorine), and a gas selected from the group consisting of a noble gas (e.g. argon), BCl3, HBr, SiCl4 and mixtures thereof. The substrate may be heated in a reactor chamber having a dielectric window including a deposit-receiving surface having a surface finish comprising a peak-to-valley roughness height with an average height value of greater than about 1000 Å.Type: GrantFiled: September 5, 2001Date of Patent: June 15, 2004Inventors: Jeng H. Hwang, Chentsau Ying, Kang-Lie Chiang, Steve S. Y. Mak
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Patent number: 6733685Abstract: Methods of planarizing structures formed on the surfaces of substrates and wafers are disclosed. The methods form a planarizing layer over the surface and the structures, or the locations where the structures are to be formed, such that the top surface of the layer has low areas between the locations of the structures, and such that the low areas lie substantially within a plane which is below the tops of the structures. A polish-stop layer is thee formed over the low areas of the planarizing layer, the polish-stop layer being more resistant to polishing than the planarizing layer and, preferably, the structures. The resulting surface is then polished. The polishing may be accomplished by, for example, standard mechanical polishing, and chemical-mechanical polishing.Type: GrantFiled: June 12, 2001Date of Patent: May 11, 2004Assignee: Fujitsu LimitedInventors: Solomon I. Beilin, Michael G. Lee, William T. Chou, Larry Louis Moresco, Wen-chou Vincent Wang
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Patent number: 6730644Abstract: The present invention relates to a cleaning solution capable of removing efficiently at the same time particles and metallic impurities from a substrate surface without corroding metallic materials. The cleaning solution for cleaning substrates of electronic materials comprises an organic acid compound and at least one selected from the group consisting of dispersants and surfactants.Type: GrantFiled: April 17, 2000Date of Patent: May 4, 2004Assignee: Kanto Kagaku Kabushiki KaishaInventors: Norio Ishikawa, Yumiko Abe, Kiyoto Mori
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Publication number: 20040074873Abstract: A process for removing aluminosilicate-based material (e.g., “CMAS”) from a substrate is described. The material is treated with an aqueous composition containing at least one acid having the formula HXAF6, in which A is Si, Ge, Ti, Zr, Al, and Ga; and x is 1-6. Treatment of the substrate is often carried out by immersion in an aqueous bath. The process is also very effective for removing CMAS-type material from cavities in the substrate, e.g., cooling holes in a gas turbine component. Related compositions are also described.Type: ApplicationFiled: October 21, 2002Publication date: April 22, 2004Applicant: General Electric CompanyInventors: Lawrence Bernard Kool, Stephen Joseph Ferrigno, Robert George Zimmerman, Mark Alan Rosenzweig, Curtis Alan Johnson
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Publication number: 20040065864Abstract: An acidic polishing slurry for chemical-mechanical polishing, containing 0.1 to 5% by weight of a colloidal silica abrasive and 0.5 to 10% by weight of a fluoride salt, is distinguished by a higher polishing selectivity with regard to the rate at which silica is removed compared to the rate at which silicon nitride is removed compared to a conventional polishing slurry containing pyrogenic silica.Type: ApplicationFiled: October 7, 2003Publication date: April 8, 2004Inventors: Kristina Vogt, Lothar Puppe, Chun-Kuo Min, Li-Mei Chen
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Patent number: 6702954Abstract: The present invention provides a chemical-mechanical polishing slurry for use in removing a barrier layer during the fabrication of a damascene structure. The slurry according to the invention includes an agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed. In the presently most preferred embodiment of the invention, the agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed is L-lysine and/or L-arginine. The present invention also provides a method of suppressing the removal rate of an underlying silicon-containing dielectric layer during the chemical-mechanical polishing of a barrier layer in a damascene structure. The method according to the invention includes polishing the barrier layer with a slurry comprising an agent that suppresses the rate at which said underlying silicon-containing dielectric layer is removed.Type: GrantFiled: October 19, 2000Date of Patent: March 9, 2004Assignee: Ferro CorporationInventors: Yie-Shein Her, Ramanathan Srinivasan, Suryadevara Babu, Suresh Ramarajan
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Patent number: 6703319Abstract: A composition suitable for cleaning and methods of cleaning etch residue are provided. The composition includes at least one source of a fluoride ion and at least one organic solvent.Type: GrantFiled: June 16, 2000Date of Patent: March 9, 2004Assignee: Micron Technology, Inc.Inventors: Donald L. Yates, Donald L. Westmoreland
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Patent number: 6677286Abstract: Compositions containing water, an organic dicarboxylic acid, a buffering agent and fluorine source and optionally a water miscible organic solvent are capable of removing etching residue.Type: GrantFiled: July 10, 2002Date of Patent: January 13, 2004Assignee: Air Products and Chemicals, Inc.Inventors: Roberto John Rovito, David Barry Rennie, Dana L. Durham
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Patent number: 6673262Abstract: The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1-100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas.Type: GrantFiled: December 9, 1998Date of Patent: January 6, 2004Assignee: Central Glass Company, LimitedInventors: Isamu Mori, Tetsuya Tamura, Mitsuya Ohashi
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Patent number: 6666987Abstract: A liquid etchant and a method for roughening a copper surface each capable of providing copper with a roughened surface increased in acid resistance regardless of a chlorine ion in a short period of time, to thereby ensure firm adhesion between a copper conductive pattern and an outer layer material during manufacturing of a printed circuit board, resulting in the manufacturing being highly simplified. The liquid etchant includes a main component containing an oxo acid such as sulfuric acid and a peroxide such as hydrogen peroxide. Also, the liquid etchant includes an auxiliary component containing a tetrazole such as 5-aminotetrazole or the like, or a 1,2,3-azole. The liquid etchant permits a copper surface to be roughened in an acicular manner.Type: GrantFiled: June 8, 1999Date of Patent: December 23, 2003Assignee: Ebara Densan Ltd.Inventors: Yoshihiko Morikawa, Kazunori Senbiki, Nobuhiro Yamazaki
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Patent number: 6660180Abstract: A silicon etching method includes providing a substrate assembly including an exposed silicon region and an exposed oxide region. An etch composition including an ammonium fluoride component, an inorganic acid component, and an oxidizing agent is also provided. The etch composition has a pH in the range of about 7.0 to about 8.0. The substrate assembly is exposed to the etch composition. Exposing the substrate assembly to the etch composition may result in etching the exposed silicon region at an etching rate that is greater than about 3 times the etching rate of the exposed oxide region and/or etching the silicon region at an etch rate greater than about 9 Å/minute. The etching method may be used in forming isolation structures. Further, etch compositions for performing the desired etch are provided.Type: GrantFiled: November 30, 2001Date of Patent: December 9, 2003Assignee: Micron Technology, Inc.Inventors: Whonchee Lee, Pai Pan, Terry Gilton
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Patent number: 6649081Abstract: A deoxidizing liquid composition for aluminum contains in addition to water: fluoroborate anions, preferably from added fluoroboric acid; an acid, preferably nitric acid, that is a substantially stronger acid than either fluoroboric acid or boric acid; an additional oxidizing agent, preferably hydrogen peroxide; and an organic azole compound. Preferably the composition also contains propylene glycol, which is a stabilizer for hydrogen peroxide and also improves deoxidizing results.Type: GrantFiled: March 24, 1999Date of Patent: November 18, 2003Assignee: Henkel CorporationInventors: Philip M. Johnson, Lawrence R. Carlson, Donna A. Garrigues