Abstract: The formulations of the present invention etch doped silicon oxide compounds, such as BPSG and PSG layers, at rates greater than or equal to the etch rate of undoped silicon oxide such as thermal oxide. The formulations have the general composition of a chelating agent, preferably weakly to moderately acidic (0.1-10%; preferably 0.2-2.8%); a fluoride salt, which may be ammonium fluoride or an organic derivative of either ammonium fluoride or a polyammonium fluoride (1.65-7%; preferably 2.25-7%); a glycol solvent (71-98%; preferably 90-98%); and optionally, an amine.

Abstract: A planarization composition is set forth in accordance with an embodiment of the invention. The composition comprises spherical silica particles having a weight average particle diameter which falls within the range from about 0.03&mgr; to about 2&mgr; and is monodisperse in that at least about 90 weight percent of the particles have a variation in particle diameter from the average particle diameter of no more than about ±20%. A liquid carrier comprising up to 20 weight percent ROH, and an amine hydroxide which is NR4OH or NR2NR3OH, where each R is HCH3, CH2CH3, C3H7 or C4H9, in the amount of 0.1 to 10 weight percent; an oxidizer which is in the amount from about 0.5% to 15% weight percent; an acid stabilizer for adjusting the pH to fall within a range from about 7.0 to about 0.5; and the remainder is water. The invention also relates to a thinning, polishing and planarizing apparatus and to a method for carrying out the thinning, polishing and planarizing operation.

Abstract: A method for removing scales formed on iron-based metal alloy containing Ni and/or Cr comprising contacting the metal alloy with a pickling solution containing nitrates and fluorides as essential components. The nitrates and fluorides used for the method are superior to the mixture of nitric acid and hydrofluoric acid in pickling efficiency, fundamental elimination of noxious gas; and optional abbreviation of pre-treatment before pickling. The pickling solution may also contain auxiliary component. A pickling composition containing nitrates and fluorides and a regenerating method of spent pickling solution is also provided.

Abstract: The method of manufacturing a semiconductor apparatus can solve problems in that a semiconductor film is not separated completely from a substrate and a great quantity of etchant is required. Ammonium fluoride is added to a hydrofluoric acid solution, so as to improve the etching rate and promote separation of the semiconductor film from the substrate. A manufacturing apparatus according to the present invention is provided with a re-liquefying function capable of again liquefying vapor of hydrofluoric acid solution so as to use liquefied vapor as the etchant so that the etchant is saved.

Abstract: A process and composition for treating a metal surface to increase its surface roughness for subsequent adhesion to a polymer layer. The composition comprises hydrogen peroxide, inorganic acid, an amine free of a surfactant group and optionally, a corrosion inhibitor. The composition is characterized by elimination of a surfactant from solution.

Abstract: A composition and method for stripping tin and solder and the underlying tin-copper alloy from the copper substrate of a printed circuit board is presented. The liquid includes an aqueous solution of nitric acid in an amount sufficient to dissolve solder and tin, a source of ferric ions in an amount sufficient to dissolve the tin-copper alloy, and a source of halide ions in an amount sufficient to significantly improve the resistance between printed circuits.

Abstract: Provided is a novel method of cleaning a chemical vapor deposition processing chamber having deposits on an inner surface thereof is provided. The process involves forming a plasma from one or more gases comprising a fluorine-containing but otherwise halogen-free non-global-warming compound, and contacting active species generated in the plasma with the inner surface of the chamber, with the proviso that the non-global-warming compound is not trifluoroacetic anhydride. Also provided is a method of etching a layer on a silicon wafer. The method involves the steps of: (a) introducing a silicon wafer into a processing chamber, the silicon wafer comprising a layer to be etched; and (b) forming a plasma from one or more gases comprising a fluorine-containing but otherwise halogen-free non-global-warming compound. Active species generated in the plasma are contacted with the silicon wafer, thereby etching the layer, with the proviso that the non-global-warming compound is not trifluoroacetic anhydride.

Abstract: A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown: Ammonium fluoride and/or a derivative thereof;  1-21% an organic amine or mixture of two amines; 20-55% water; 23-50% a metal chelating agent or mixture of chelating agents.

Abstract: The present invention relates to the fabrication of integrated circuit devices, and more particularly, to a method of etching inorganic antireflective layers without etching excessive amounts of an underlying oxide.

Abstract: This invention relates to a composition for cleaning and etching the surface in fabricating electronic displays and the substrates. Specifically this invention relates to a composition to effectively remove the contaminants by cleaning, to remove any contaminants on the surface, and to etch SiO2 and Si substrate in the fabrication process of electronic displays, quartz devices, wafer, and semiconductor wafer. According to this invention, it is possible to clean and etch more efficiently and conveniently. Also The surface roughness is improved. Further the composition of this invention can be made available in powder type for preparing a defined amount of solution. It provides the conveniences in transportation, handling and storage.