Abstract: A nickel stripping composition is disclosed. The composition can be contacted with a nickel plated article in an aqueous solution in order to remove the nickel. In accordance with the present invention, besides an oxidizing agent, the composition includes the combination of an organic amine and citric acid or salt. Alternatively, other amines containing particular substituent groups can be present in the solution in order to increase the nickel holding capacity of the solution.

Abstract: The present invention is directed to a novel etching process for a semiconductor material which inhibits corrosion of metal comprised of pretreating the material, preferably with a surfactant, and then exposing the material to a mixture comprising salt, a buffered oxide etch, and optionally a surfactant.

Abstract: An aqueous etchant composition containing about 0.01 to about 15 percent by weight of sulfuric acid and about 0.01 to about 20 percent by weight of hydrogen peroxide or about 1 to 30 ppm of ozone, and about 0.01 to 100 ppm of hydrofluoric acid is effective in removing polymer and via residue from a substrate or conductive material, and especially from an integrated circuit chip having aluminum lines thereon.

Abstract: A new slurry for shallow trench isolation (STI) processing in the chemical mechanical planarization (CMP) in microelectronic industry comprising an aqueous medium having an abrasive; and a compound which has a carboxylic group and an electrophilic functional group. The combination of ceria and/or titania with amino acids to obtain polishing selectivity's greater than 5:1. CMP is used for removing the excess oxide and planarizing the substrate and the trench. The silicon nitride acts as a stop layer, preventing the polishing of underlying silicon substrate.

Abstract: This invention relates to a method of forming a substrate with preparing a surface capable of making a cocontinuous bond comprising the steps of 1) obtaining a copper or copper alloy substrate and 2) applying an etching composition which comprises (a) an acid, (b) an oxidizing agent, (c) a copper complexing agent, and (d) a copper complex, wherein the copper complex is present in an amount which precipitates when applied to the copper or copper alloy substrate. The method also includes the step of 3) treating the substrate with a coating composition and/or 4) applying a stripping composition to the substrate. The invention also relates to copper articles, having surface porosity, including multilayer articles such as printed circuit boards and compositions used in the method. The present invention provides microporous copper or copper alloy substrates which have improved adhesion properties to organic material.

Abstract: Chemical mechanical polishing compositions and slurries comprising a film forming agent and at least one silane compound wherein the compositions are useful for polishing substrate features such as copper, tantalum, and tantalum nitride features.

Abstract: The invention relates to the fabrication of a gate stack or other layered structure in a semiconductor device, and more particularly to methods to selectively etch a metal silicide layer, such as tungsten silicide (WSix), without etching excessive amounts of an underlying polysilicon or gate dielectric layer. The methods of the invention employ an etch chemistry that minimizes or eliminates the formation of lateral growth structures on a metal silicide layer during oxidation steps following etch of a gate stack. A preferred etch composition comprises ammonium fluoride and less than 2% by volume hydrogen peroxide in an aqueous solution with a pH control agent to maintain the solution at about pH 7 to 10.

Abstract: An etching treatment agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.

Abstract: A polishing composition comprising a dispersion of silane modified abrasive particles formed by combining at least one metal oxide abrasive having at least one surface metal hydroxide with at least one silane compound and methods for polishing substrate features such as metal features and oxide features using the polishing compositions.

Abstract: A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.

Abstract: An object of the present invention is to provide a composition for polishing a magnetic disk substrate that is used as a storage device for a computer or the like, and is capable of producing a magnetic disk substrate polished with high precision suitable for use in combination with a magnetic head that floats at a low level. Another object of the present invention is to provide a method of producing the composition for polishing the magnetic disk substrate. A polishing composition includes alkali metal ions, abrasive grains, a carboxylic acid, an oxidizing agent, and an anti-gelling agent contained in an aqueous medium. In a method of the present invention for preparing a polishing composition, a pH value of an aqueous medium, in which abrasive grains, a carboxylic acid, an oxidizing agent, and an anti-gelling agent are contained, is adjusted to a range of about 1 to about 5 by the addition of alkali metal hydroxide to the aqueous medium.

Abstract: The polymer particles of the invention are characterized by being obtained by polycondensation of at least one from among Compound 1 represented by general formula (1), its hydrolysates and its partial condensates, and at least one from among Compound 2 represented by general formula (2), its hydrolysates and its partial condensates, and by having a mean particle size of 3-1000 nm. M(OR1)z  (1) (R2)nM(OR3)z-n  (2) where M is Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ge, Zr, Nb, Mo, Sn, Sb, Ta, W, Pb or Ce; z is the atomic valence of M; R1 and R3 are each an alkyl group of 1-5 carbon atoms, an acyl group of 1-6 carbon atoms or an aryl group of 1-9 carbon atoms; R2 is a monovalent organic group of 1-8 carbon atoms; n is an integer of from 1 to (z−2); and R1, R2 and R3 may be the same or different. These particles are used in polishing compositions used for chemical mechanical polishing.

Abstract: Methods for the removal of anti-reflective layers during fabrication of integrated circuits are disclosed. In particular, an anti-reflective pattern or layer can be removed using a solution that includes a fluorine containing compound, an oxidant, and water. The fluorine containing compound in the solution can be hydrogen fluorine containing compound. Preferably, the oxidant in the solution is H2O2. The oxidant in the solution can also be ozone water. Related compositions are also disclosed.

Abstract: The present invention provides for the use of bis(perfluoroalkanesulfonyl)imide and its salts as surfactants or additives applications having an extreme environment.

Abstract: When iron group, especially high nickel, metal alloys that contain substantial amounts of copper are pickled, a displacement coating of copper that is called a “copper kiss” often forms on the pickled surface from the dissolved copper ions in the pickling solution before the pickling solution can be rinsed away. Traditionally this has been removed by treatment with aqueous ammonia, an annoying and potentially hazardous reagent that in many instances requires expensive pollution abatement devices. In this invention, copper kiss is equally effectively removed by treatment with a mixture of sulfuric acid and hydrogen peroxide, optionally also containing hydrofluoric acid.

Abstract: A CMP oxide slurry includes an aqueous solution containing abrasive particles and two or more different passivation agents. Preferably, the aqueous solution is made up of deionized water, and the abrasive particles are a metal oxide selected from the group consisting of ceria, silica, alumina, titania, zirconia and germania. Also, a first passivation agent may be an anionic, cationic or nonionic surfactant, and a second passivation agent may be a phthalic acid and its salts. In one example, the first passivation agent is poly-vinyl sulfonic acid, and the second passivation agent is potassium hydrogen phthalate. The slurry exhibits a high oxide to silicon nitride removal selectivity.

Abstract: A method of removing Chemical Mechanical Polishing (CMP) residue from a semiconductor substrate is disclosed. The semiconductor substrate with the CMP residue on a surface is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a solvent are introduced into the pressure chamber. The supercritical carbon dioxide and the chemical are maintained in contact with the semiconductor substrate until the CMP residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

Abstract: A contact is defined by an opening etched into borophosphosilicate glass (BPSG) down to a silicon substrate. In a contact cleaning process designed to remove native oxide at the bottom of the contact with little effect on the BPSG, the contact is dipped in an etch retardant before being dipped in a cleaning solution containing both the etch retardant and an etchant. The dip in etch retardant modifies the surface of the BPSG, thereby lessening the enhanced etching experienced during the initiation of the dip into the etchant/etch retardant cleaning solution. Results of a etchant/etch retardant clean, both with and without the prepassivation, can be illustrated on a graph depicting the change in contact diameter as a function of dip time. Specifically, the results define “best fit” lines on that graph.

Abstract: A method for removing organometallic and organosihicate residues remaining after a dry etch process from semiconductor substrates. The substrate is exposed to a conditioning solution of phosphoric acid, hydrofluoric acid, and a carboxylic acid, such as acetic acid, which removes the remaining dry etch residues while minimizing removal of material from desired substrate features. The approximate proportions of the conditioning solution are typically 80 to 95 percent acetic acid, 1 to 15 percent phosphoric acid, and 0.01 to 5.0 percent hydrofluoric acid.

Abstract: The present invention relates to non-selective slurries for chemical-mechanical polishing of a metal layer and a method for manufacturing thereof, and further to a method for forming a plug in an insulating layer on a wafer using such a slurry. More particularly, a slurry is provided for polishing chemically and mechanically simultaneously a metal layer, a barrier layer and an insulating layer used in a semiconductor integrated circuit, which maintains a pH in the range of weak acidity to weak alkalinity by including a first oxidizing agent to reduce a second oxidizing agent, the second oxidizing agent originally being reduced by oxidizing a metal layer. The second oxidizing agent is recycled by recovering the oxidizing power of the first oxidizing agent. An additive increases a polishing rate of the barrier layer and an abrasive is provided to the slurry in an aqueous medium.

Abstract: The present invention relates to an aqueous slurry that is particularly useful for removing silicon dioxide in preference to silicon nitride by chemical-mechanical processing. The aqueous slurry according to the invention includes abrasive particles and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The present invention also relates to a method of removing silicon dioxide in preference to silicon nitride from a surface of an article by chemical-mechanical polishing. The method includes polishing the surface using a polishing pad, water, abrasive particles, and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The abrasive particles can be dispersed in the aqueous medium or they can be bonded to the polishing pad.

Abstract: A homogeneous compositions containing a fluorinated solvent, hydrogen fluoride, and an optional co-solvent, and the use of these compositions for etching of microelectromechanical devices is described.

Abstract: A composition for use in semiconductor processing wherein the composition comprises water, phosphoric acid, and an organic acid; wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups (e.g., citric acid). The water can be present in about 40 wt. % to about 85 wt. % of the composition, the phosphoric acid can be present in about 0.01 wt. % to about 10 wt. % of the composition, and the organic acid can be present in about 10 wt. % to about 60 wt. % of the composition. The composition can be used for cleaning various surfaces, such as, for example, patterned metal layers and vias by exposing the surfaces to the composition.

Abstract: Provided are methods for making a slurry composition, suitable for use in a chemical-mechanical planarization process. Also provided are compositions made by such methods. The methods comprise combining: (a) abrasive particles; (b) a suspension medium; (c) a peroxygen compound; (d) an etching agent; and (e) an alkyl ammonium hydroxide. The methods and compositions of the present invention are particularly applicable to the semiconductor manufacturing industry.

Abstract: A composition prepared from water, hydrofluoric acid (HF) and tetraalkylammonium hydroxide (TAAH, preferably tetramethylammonium hydroxide (TMAH)) or tetraalkylammonium fluoride and solvent with or without HF or TAAH is used to clean residue from a semiconductor wafer, where the residue is formed as a result of a planarization process, such as chemical mechanical polishing. Incorporation of TMAH into an aqueous HF composition retards the rate at which the composition dissolves borophosphosilicate (BPSG) without effecting the rate at which silica is dissolved. Thus, the aqueous HF/TMAH composition may be used to completely remove silica-containing residue from a BPSG surface, with a tolerable level of BPSG removal.

Abstract: Lead brass components for potable water distribution circuits (e.g., plumbing components made of CuZn39Pb3, containing 3% Pb), also chronium plated ones, are subjected to a lead-selective surface etching to reduce, in operation, the release of Pb caused by Pb surface “smearing”, resulting either from machining or molding; said elements are firstly contacted by an aqueous solution of an acid capable of forming soluble Pb salts, preferably a non-oxidizing solution, by simply dipping the components in the solution, e.g., a solution of 0.1 M sulfamic acid, at 20°−50° C. for 10 to 50 minutes, and, subsequently, the elements are passivated by immersion into a strong base aqueous solution, e.g., a solution of 0.1 M NaOH at 20°−25° C., for approximately 10 minutes; in this manner, plumbing components made of a copper based alloy containing Pb are obtained, which components, after 15 days of test according to US NSF STD61 procedure, release Pb in an amount less than 0.

Abstract: A method of etching silicon oxide with high selectivity to a photoresist mask and to a silicon-containing substrate comprising exposing the silicon oxide to a plasma of a precursor etch gas of a fluorocarbon and an organic silane containing at least one organic group. When at least about 10% by weight of the silane is present in the etch gas, the selectivity between the silicon oxide and the photoresist mask layer, and between the silicon oxide and the silicon-containing substrate, increases markedly. High aspect ratio, submicron size openings can be etched.

Abstract: The present invention relates to slurry compositions for the chemical mechanical planarization (“CMP”) of tungsten. A non-metallic oxidizer in the form of periodic acid is used in combination with a mineral acid typically nitric acid, to maintain the pH of periodic acid at levels not leading to the precipitation of iodic acid salts. Ammonium nitrate (NH4NO3) is included in the CMP slurry which yields soft pad polishing rates of tungsten film removal of approximately 4,000 Å/min.

Abstract: This invention relates to a CMP slurry system for use in semiconductor manufacturing. The slurry system comprises two parts. The first part is a generic dispersion that only contains an abrasive and, optionally, a surfactant and a stabilizing agent. The generic dispersion can be used for polishing metals as well as interlayer dielectrics (ILD). The second part is a novel activator solution comprising at least two components selected from the group consisting of: an oxidizer, acids, amines, chelating agents, fluorine-containing compounds, corrosion inhibitors, buffering agents, surfactants, biological agents and mixtures thereof.

Abstract: A mixed aqueous solution containing HCl with a concentration of 10 to 25% by weight, H2O2 with a concentration of 2 to 5% by weight, and HF with a concentration of 0.01 to 2% by weight or a mixed aqueous solution containing H2SO4 with a concentration of 65 to 82% by weight, H2O2 with a concentration of 4 to 16% by weight, and HF with a concentration of 0.01 to 2% by weight is used as a platinum group impurity recovery liquid. The recovery liquid is dripped onto a silicon substrate surface or a film thereon so as to scan the entire surface of the substrate with the droplets. As a result, the platinum group impurity is dissolved into the recovery liquid, and the platinum group impurity is thus recovered.

Abstract: The present invention relates to a cleaning solution which can reliably remove the platinum group metal (e.g. Pt or Ir) contaminants adhering on the silicon-based insulating film (e.g. silicon oxide film) formed on a semiconductor substrate and further can prevent the readhesion of the removed contaminants, as well as to a cleaning method using said cleaning solution. Since the cleaning solution consists of HPFM or SPFM which is a mixture of a hydrochloric acid-hydrogen peroxide (HPM) or sulfuric acid-hydrogen peroxide (SPM) solution with a very small amount of hydrofluoric acid, the contaminants adhering on the silicon-based insulating film can be reduced to a level lower than 1×1010 atoms/cm2.

Abstract: An etchant for copper or copper alloys comprising 5-50 wt % of an alkanolamine, a copper ion source in the amount of 0.2-10 wt % as copper, a halide ion source in the amount of 0.005-10 wt % as halogen, 0.1-30 wt % of an aliphatic carboxylic acid, and the balance water, wherein the molar ratio of the alkanolamine to one mol of the aliphatic carboxylic acid is two or more. The etchant is free from problems such as instability of the liquid composition and unpleasant odor, has a high etching rate, exhibits only very slight corrosion even if a small amount of residue is left on the surface and is capable of producing a roughened surface when used for microetching.

Abstract: The invention provides azeotrope-like compositions consisting essentially of RfCF(OC2H5)CF(CF3)2, where Rf is a straight chain perfluoroalkyl group having 3 carbon atoms, and an organic solvent selected from the group consisting of: (a) unsubstituted straight chain, branched chain, and cyclic saturated alkanes containing 8 to 11 carbon atoms; (b) chlorinated straight chain, branched chain, and cyclic saturated alkanes containing 5 to 7 carbon atoms; (c) aromatic or unsaturated cyclic halogenated or unhalogenated hydrocarbons containing 7 to 10 carbon atoms; (d) esters containing 6 carbon atoms; (e) ketones containing 6 to 7 carbon atoms; (f) glycol ethers containing 6 carbon atoms; and (g) siloxanes containing 8 carbon atoms.

Abstract: Provided is a novel method and system for preparing ultra-high-purity buffered-hydrofluoric acid or ammonium fluoride controlled concentration. The method comprises bubbling purified ammonia vapor into ultra-pure hydrofluoric acid. The inventive method and system can be used as an on-site subsystem in a semiconductor device fabrication facility for supplying the buffered-hydrofluoric acid and ammonium fluoride to points of use in the semiconductor device fabrication facility.

Abstract: A composition and method of construction and use therefor in chemical-mechanical polishing (“CMP”) of one or more substrate assemblies is described. More particularly, a polishing solution comprising etchant, abrasive particles, and surfactant and methods of mixing to form and to dispense the polishing solution are described. One or more of the etchant, abrasive particles, and/or surfactant may comprise a liquid medium. Etchant, surfactant or abrasive particles may be premixed, mixed in-situ (“point of use mixing”), or any combination thereof. The surfactant may be ionic or nonionic. In particular, a polyoxyethylene may be used, and more particularly, a polyoxyethylene ester or ether may be used.

Abstract: A process for revealing agglomerated intrinsic point defects in a single crystal silicon sample. The process includes heat-treating the single crystal silicon sample, cooling the heat-treated sample and then coating a surface of the cooled sample with a composition containing a metal which is capable of decorating agglomerated intrinsic point defects. The coated sample is then heat-treated in an inert atmosphere at a temperature and for a time sufficient to diffuse the metal into the sample. A non-defect delineating etch is performed, followed by a defect delineating etch to reveal the decorated agglomerated intrinsic point defects.

Abstract: A method for cleaning a PZT thin film using an etchant is provided. The method employs a combination of HF (or buffered oxide etchant (BOE)) and acetic acid, or a combination of HF(BOE), acetic acid and alcohol, as an etchant to thus reduce an etching rate of a PZT thin film, which is greatly dependent on the density of HF, thereby etching the PZT thin film to a finer dimension of thickness of 100Å or less using the etchant. Therefore, only secondary phase crystals or etching damaged layers on the surface of the PZT thin film can be eliminated.

Abstract: The formulations of the present invention etch doped silicon oxide compounds, such as BPSG and PSG layers, at rates greater than or equal to the etch rate of undoped silicon oxide such as thermal oxide. The formulations have the general composition of a chelating agent, preferably weakly to moderately acidic (0.1-10%; preferably 0.2-2.8%); a fluoride salt, which may be ammonium fluoride or an organic derivative of either ammonium fluoride or a polyammonium fluoride (1.65-7%; preferably 2.25-7%); a glycol solvent (71-98%; preferably 90-98%); and optionally, an amine.

Abstract: A composition and process are described which are useful in treating metal surfaces, which composition comprises an oxidizer, an acid, a corrosion inhibitor, an organic nitro compound and, optionally, a benzotriazole with an electron withdrawing group in the 1-position which electron withdrawing group is a stronger electron withdrawer than a hydrogen group, optionally, a source of adhesion enhancing species selected from the group consisting of molybdates, tungstates, tantalates, niobates, vanadates, isopoly or heteropoly acids of molybdenum, tungsten, tantalum, niobium, vanadium, and combinations of any of the foregoing and optionally but preferably a source of halide ions. The composition and process are useful in increasing the adhesion of metal surfaces to polymeric substances and in preserving said adhesion through temperature variation.

Abstract: Cleaning solutions for removing contaminants from semiconductor substrates are provided and include from about 0.08 to about 0.1 percent by weight of hydrogen fluoride; from about 0.5 to about 0.6 percent by weight of ammonium fluoride; from about 24.9 to about 49.7 percent by weight of hydrogen peroxide; and from about 49.6 to about 74.5 percent by weight of water.

Abstract: A composition for selective etching of oxides over a metal. The composition contains water, hydroxylammonium salt, carboxylic acid, a fluorine containing compound, and optionally, a base. The pH of the composition is about 2 to 6.

Abstract: A method for removing scales formed on iron-based metal alloy containing Ni and/or Cr comprising contacting the metal alloy with a pickling solution containing nitrates and fluorides as essential components. The nitrates and fluorides used for the method are superior to the mixture of nitric acid and hydrofluoric acid in pickling efficiency, fundamental elimination of noxious gas; and optional abbreviation of pre-treatment before pickling. The pickling solution may also contain auxiliary component. A pickling composition containing nitrates and fluorides and a regenerating method of spent pickling solution is also provided.

Abstract: A ceria based abrasive is used in a chemical mechanical polishing operation at low polish pressure, and a predetermined pH range, to achieve high polish rates and good uniformity when planarizing layers formed from low dielectric constant materials, including but not limited to polymers. The distribution of ceria particle sizes in an exemplary slurry is bimodal and controlled. In a particular embodiment a polishing abrasive containing a controlled distribution of ceria particle sizes is used in a CMP polisher apparatus with a polishing pressure of approximately 3 psi and a pH of approximately 10.6 to planarize polymer films.

Abstract: A method of removing polishing residue from a substrate includes placing the substrate in a pressure chamber, pressurizing the pressure chamber, and maintaining the supercritical fluid in contact with the substrate until the polishing residue is removed from the substrate. Following removal of the polishing residue from the substrate, the pressure chamber is flushed and vented.

Abstract: A method for removing organometallic and organosilicate residues remaining after a dry etch process from semiconductor substrates. The substrate is exposed to a conditioning solution of phosphoric acid, hydrofluoric acid, and a carboxylic acid, such as acetic acid, which removes the remaining dry etch residues while minimizing removal of material from desired substrate features. The approximate proportions of the conditioning solution are typically 80 to 95 percent acetic acid, 1 to 15 percent phosphoric acid, and 0.01 to 5.0 percent hydrofluoric acid.

Abstract: The present invention provides an etching composition which includes a polyhydric alcohol in combination with two inorganic acids. Preferably the etching composition of the present invention is a mixture of a glycol, nitric acid and hydrofluoric acid, with propylene glycol being preferred. The etching composition of the present invention achieves a selectivity of greater than 70:1, doped material to undoped material. The present invention provides an etching formulation which has increased selectivity of doped polysilicon to undoped polysilicon and provides an efficient integrated circuit fabrication process without requiring time consuming and costly processing modifications to the etching apparatus or production apparatus.

Abstract: The present invention is directed to a novel etching process for a semiconductor material which inhibits corrosion of metal comprised of pretreating the material, preferably with a surfactant, and then exposing the material to a mixture comprising salt, a buffered oxide etch, and optionally a surfactant.

Abstract: A homogeneous compositions containing a fluorinated solvent, hydrogen fluoride, and a co-solvent, and the use of these compositions for cleaning and etching of substrates is described.

Abstract: The invention includes methods of selectively etching polysilicon relative to at least one of deposited oxide, thermally grown oxide and nitride, and methods of selectively etching polysilicon relative to BPSG. In one implementation, a method of selectively etching polysilicon relative to at least one of deposited oxide, thermally grown oxide and nitride, includes forming a substrate to have a layer comprising polysilicon received over at least one layer comprising at least one of deposited oxide, thermally grown oxide, and nitride. The polysilicon is exposed to an aqueous solution comprising NH4F, an oxidizer, CH3COOH, TMAH, and HF under conditions effective to selectively etch at least a portion of the polysilicon comprising layer relative to an ultimately exposed portion of the at least one of deposited oxide, thermally grown oxide, and nitride.

Abstract: The invention provides a chemical-mechanical abrasive composition for semiconductor processing, which composition is characterized by comprising a water-soluble anionic chemical. According to the invention, said water-soluble anionic chemical would be coated on the surface of a metal film during the polishing of said metal film so as to inhibit the formation of depressions on the resultant metal circuits. In another aspect, the invention provides a chemical-mechanical abrasive composition in the form of a slurry comprising 70-99.5% by weight of an aqueous medium; 0.1-25% by weight of an abrasive particle; 0.01-2.0% by weight of an abrasion enhancer; and 0.01-1% by weight of a water-soluble anionic chemical. The chemical-mechanical abrasive composition of the invention may further comprise an oxidant to enhance the abrasion rate.