Abstract: A gellable vehicle surface cleaning composition is provided that includes a non-ionic surfactant combined with gelling components of an inorganic gel forming substance and at least one water soluble polymer in a ratio of the inorganic gel forming substance to the hydrophilic polymer of between 0.1-1:1. The non-ionic surfactant and the gelling components are provided in an aqueous solvent system. The aqueous solvent system includes a first solvent having a Kamlet-Taft solvent polarity ? (K-T ?) value of zero, a second solvent having a K-T ? 0.6-0.85 value, and water present at more than 50 total weight percent. A process of for cleaning a vehicle surface with a stain is also provided that includes the composition to the stain on the vehicle surface a composition and after allowing sufficient time for the composition to lift the stain, the stain and the composition are removed from the vehicle surface.

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

Abstract: A predetermined bone site in a patient selected for restoration is exposed, contacted with an aqueous, methylene blue containing phosphoric acid solution for a time period of at least 3 minutes but no more than about 15 minutes, and thereafter cleansed ultrasonically to remove any bacteria that may be present. Preferred phosphoric acid concentration in the aqueous solution is about 37 percent by weight.

Abstract: The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I): 3) at least one compound of structure (II): and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R1-R7, X, Y, and Z1-Z3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.

Abstract: This disclosure relates to etching compositions containing 1) at least one oxidizing agent; 2) at least one chelating agent; 3) at least one organic solvent; 4) at least one amine compound; and 5) water.

Abstract: A transparent electrode or a transparent heat trace is manufactured by transferring a silver nanowire formed on a glass substrate to a polymer and a flexible film. When the silver nanowire transferred to the polymer and the flexible film is processed with an iodine mixture, a surface of the silver nanowire is discolored.

Abstract: A polishing composition for use in polishing an object to be polished, which comprises abrasive grains, a dispersing medium, and an additive, wherein the abrasive grains are surface-modified, the additive is represented by the following formula 1: wherein in the formula 1, X1 is O or NR4, X2 is a single bond or NR5, R1 to R5 are each independently a hydrogen atom; a hydroxy group; a nitro group; a nitroso group; a C1-4 alkyl group optionally substituted with a carboxyl group, an amino group, or a hydroxy group; or CONH2; with the proviso that R2 and R5 may form a ring; when X2 is a single bond, R3 is not a hydrogen atom, or R1 to R3 are not a methyl group; and when X2 is NR5 and three of R1 to R3 and R5 are a hydrogen atom, the other one is not a hydrogen atom or a methyl group; and a pH is 5.0 or less.

Abstract: A transistor having high field-effect mobility is provided. In order that an oxide semiconductor layer through which carriers flow is not in contact with a gate insulating film, a buried channel structure in which the oxide semiconductor layer through which carriers flow is separated from the gate insulating film is employed. Specifically, an oxide semiconductor layer having high conductivity is provided between two oxide semiconductor layers. Further, an impurity element is added to the oxide semiconductor layer in a self-aligned manner so that the resistance of a region in contact with an electrode layer is reduced. Further, the oxide semiconductor layer in contact with the gate insulating layer has a larger thickness than the oxide semiconductor layer having high conductivity.

Abstract: Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise solvent, abrasive, at least three chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations therefor; wherein at least one chelator is an amino acid or an amino acid derivative. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide are used in the formulations.

Abstract: A composition for forming protective films against aqueous hydrogen peroxide solutions, including: a compound of the following formula (1a) or formula (1b) or a compound having a substituent of the following formula (2) and having a molecular weight of 300 or more and less than 800 or a weight-average molecular weight of 300 or more and less than 800; and a solvent, the composition containing the compound of the formula (1a) or formula (1b) of 0.1% by mass to 60% by mass or the compound having the substituent of the formula (2) of 10% by mass to 100% by mass, relative to solids excluding the solvent: (wherein R1 is a C1-4 alkylene or alkenylene group or a direct bond, k is 0 or 1, m is an integer of 1 to 3, and n is an integer of 2 to 4.

Abstract: Provided are a polysiloxane-based compound, a selective etching composition with respect to a silicon nitride layer including the polysiloxane-based compound, and a method of manufacturing a semiconductor device including the etching composition. The silicon nitride layer etching composition including the polysiloxane-based compound may selectively etch the silicon nitride layer relative to a silicon oxide layer, and have a significantly excellent etch selectivity ratio, and a small change in etch rate and a small change in etch selectivity ratio with respect to the silicon nitride layer even when time for using the composition increases or the composition is repeatedly used.

Abstract: An etchant composition includes phosphoric acid and a silane compound represented by the following Chemical Formula 1: wherein A is an n-valent radical, L is C1-C5 hydrocarbylene, R1 to R3 are independently hydrogen, hydroxy, hydrocarbyl, or alkoxy, in which R1 to R3 exist respectively or are connected to each other by a heteroelement, and n is an integer of 2 to 5.

Abstract: A transistor having high field-effect mobility is provided. In order that an oxide semiconductor layer through which carriers flow is not in contact with a gate insulating film, a buried channel structure in which the oxide semiconductor layer through which carriers flow is separated from the gate insulating film is employed. Specifically, an oxide semiconductor layer having high conductivity is provided between two oxide semiconductor layers. Further, an impurity element is added to the oxide semiconductor layer in a self-aligned manner so that the resistance of a region in contact with an electrode layer is reduced. Further, the oxide semiconductor layer in contact with the gate insulating layer has a larger thickness than the oxide semiconductor layer having high conductivity.

Abstract: Aspects of the disclosure provide a method for manufacturing a semiconductor device. A first structure of first stacked insulating layers including a first via over a contact region is formed. A second structure is formed by filling at least a top region of the first via with a sacrificial layer. A third structure including the second structure and second stacked insulating layers stacked above the second structure is formed. The third structure further includes a second via aligned with the first via and extending through the second stacked insulating layers. A fourth structure is formed by removing the sacrificial layer to form an extended via including the first via and the second via. A plurality of weights associated with the first structure, the second structure, the third structure, and the fourth structure is determined, and a quality of the extended via is determined based on the plurality of weights.

Abstract: An etching solution and a manufacturing method of a display are provided. The etching solution includes hydrogen peroxide (H2O2), succinic acid, malonic acid, acetic acid, sulfuric acid, 1-amino-2-propanol, 5-amino-1H-tetrazole, N,N,N?N?-tetrakis(2-hydroxypropyl) ethylenediamine (EDTP) and glycine homogenously mixed in deionized water. Hydrogen peroxide is in an amount of 5-10 wt % of the etching solution, succinic acid is in an amount of 0.5-10 wt % of the etching solution, malonic acid is in an amount of 0.5-10 wt % of the etching solution, acetic acid is in an amount of 1-10 wt % of the etching solution, sulfuric acid is in an amount of 0.5-5 wt % of the etching solution, 1-amino-2-propanol is in an amount of 1-20 wt % of the etching solution, 5-amino-1H-tetrazole is in an amount of 0.01-0.5 wt % of the etching solution, EDTP is in an amount of 1-15 wt % of the etching solution, and glycine is in an amount of 1-5 wt % of the etching solution.

Abstract: In one embodiment, a substrate processing liquid contains phosphoric acid as a primary component and contains water and ketone. In another embodiment, a substrate processing method includes processing a substrate in a substrate processing bath with a substrate processing liquid containing phosphoric acid, water and ketone. The method further includes discharging the substrate processing liquid from the substrate processing bath to a circulating flow channel, heating the substrate processing liquid flowing through the circulating flow channel at a temperature between 50° C. and 90° C., and supplying the substrate processing liquid again from the circulating flow channel to the substrate processing bath to circulate the substrate processing liquid under heating.

Abstract: The present invention is able to provide: a silicon etching liquid which anisotropically dissolves single crystal silicon, and which is characterized by containing (1) potassium hydroxide or sodium hydroxide, (2) a hydroxyl amine and (3) a cyclic compound represented by general formula (I), which has a thiourea group and wherein N and N? are linked; and a silicon etching method which uses this silicon etching liquid. (In general formula (I), Q represents an organic group having a saturated or unsaturated carbon-carbon bond.) By using the above-described silicon etching liquid, high etching rate can be achieved without lowering the etching rate of silicon and stability of the etching liquid is not impaired even in cases where copper is present in the etching liquid and/or where copper ions are dissolved in the etching liquid.

Abstract: Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a flattened, pre-curved support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process includes bending the pre-curved support handle to have substantial curvature while peeling the epitaxial material from the substrate and forming an etch crevice therebetween. Compression is maintained within the epitaxial material during the etching process. The flattened, pre-curved support handle may be formed by flattening a pre-curved support material.

Abstract: A method for manufacturing a semiconductor device includes the steps of forming a first conductive film over a substrate; forming an insulating film over the first conductive film; forming an oxide semiconductor film over the insulating film to overlap with the first conductive film; forming a second conductive film including a metal film containing molybdenum as its main component and a metal film containing copper as its main component over the oxide semiconductor film; and etching the second conductive film by an etchant. At the time of etching the second conductive film by the etchant, the oxide semiconductor film is used as an etching stopper film. In addition, the etchant which can be used for a transistor including the oxide semiconductor film is provided.

Abstract: A chemical-mechanical polishing (“CMP”) composition (P) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of A/-heterocyclic compound as corrosion inhibitor, (C) at least one type of a further corrosion inhibitor selected from the group consisting of: (C1) an acetylene alcohol, and (C2) a salt or an adduct of (C2a) an amine, and (C2b) a carboxylic acid comprising an amide moiety, (D) at least one type of an oxidizing agent, (E) at least one type of a complexing agent, and (F) an aqueous medium.

Abstract: Provided is a polishing fluid that has a fast polishing rate, and can selectively suppress polishing of layers including polysilicon or modified polysilicon during the chemical mechanical polishing in the manufacture of semiconductor integrated circuits, and a polishing method using the same. A polishing fluid used for the chemical mechanical polishing in which each of the components represented by the following (1) and (2) is included, the pH is 1.5 to 5.0, and a polishing workpiece can be polished in a range of a ratio represented by RR (other)/RR (p-Si) when the polishing rate of the first layer is RR (p-Si), and the polishing rate of the second layer is RR (other) of 1.5 to 200. (1) Colloidal silica particles (2) At least one inorganic phosphate compound selected from phosphoric acid, pyrophosphoric acid, and polyphosphoric acid.

Abstract: The present invention can provide an etching composition for a chemical copper plating for the production of a printed-wiring board according to a semi-additive process, which comprises 0.2 to 5% by mass of hydrogen peroxide, 0.5 to 10% by mass of sulfuric acid, 0.001 to 0.3% by mass of phenylurea, 0.1 to 3 mass ppm of halogen ion and 0.003 to 0.3% by mass of tetrazoles, and wherein the ratio of the dissolution rate of the chemical copper plating (Y) to the dissolution rate of an electrolytic copper plating (X) at a liquid temperature of 30° C. (Y/X) is 4 to 7.

Abstract: An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, —the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, —a lower SER than at its start and the same or essentially the same MRR as at its start or—a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior.

Abstract: A dry etching agent according to the present invention preferably contains: (A) 1,3,3,3-tetrafluoropropene; (B) at least one kind of additive gas selected from the group consisting of H2, O2, O3, CO, CO2, COCl2, COF2, CF3OF, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI, HBr, HCl, NO, NH3 and YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1?n?7); and (C) an inert gas. This dry etching agent has less effect on the global environment and can obtain a significant improvement in process window and address processing requirements such as low side etching ratio and high aspect ratio even without any special substrate excitation operation.

Abstract: A barrier chemical mechanical planarization polishing composition is provided that includes suitable chemical additives. The suitable chemical additives are organic polymer molecules containing ethylene oxide repeating units having the general molecular structure of where n refers to the total numbers of the repeating unit ranging from 6,818 to 181,817; and the molecular weights of polyethylene oxide ranging from 100,000 to 8,000,000. There is also provided a chemical mechanical polishing method using the barrier chemical mechanical planarization polishing composition.

Abstract: A method of removing at least a portion of a silicon oxide material is disclosed. The silicon oxide is removed by exposing a semiconductor structure comprising a substrate and the silicon oxide to an ammonium fluoride chemical treatment and a subsequent plasma treatment, both of which may be effected in the same vacuum chamber of a processing apparatus. The ammonium fluoride chemical treatment converts the silicon oxide to a solid reaction product in a self-limiting reaction, the solid reaction product then being volatilized by the plasma treatment. The plasma treatment includes a plasma having an ion bombardment energy of less than or equal to approximately 20 eV. An ammonium fluoride chemical treatment including an alkylated ammonia derivative and hydrogen fluoride is also disclosed.

Abstract: An aqueous polishing agent, comprising, as the abrasive, at least one kind of polymer particles (A) finely dispersed in the aqueous phase and having at their surface a plurality of at least one kind of functional groups (a1) capable of interacting with the metals and/or the metal oxides on top of the surfaces to be polished and forming complexes with the said metals and metal cations, the said polymer particles (A) being preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomer or polymer containing a plurality of functional groups (a1); graft copolymers preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomeric or polymeric aminotriazine-polyamine condensate; and a process for the chemical and mechanical polishing of patterned and unstructured metal surfaces making

Abstract: Chemical-mechanical polishing (CMP) compositions containing chemical additives and methods of using the CMP compositions are disclosed. The CMP composition comprises abrasive; chemical additive; liquid carrier; optionally an oxidizing agent; a pH buffering agent and salt; a surfactant and a biocide. The CMP compositions and the methods provide enhanced removing rate for “SiC”, SiN” and “SiCxNy” films; and tunable removal selectivity for “SiC” in reference to SiO2, “SiN” in reference to SiO2, “SiC” in reference to “SiN”, or “SiCxNy” in reference to SiO2; wherein x ranges from 0.1 wt % to 55 wt %, y ranges from 0.1 wt % to 32 wt %.

Abstract: The present invention is to provide an etching solution capable of effectively reducing Galvanic effect, wherein the etching solution is obtained by way of dissolving an etchant and a nitrogen containing five-member heterocyclic compound in water. Thus, when at least one first metal (e.g., gold) and at least one second metal (e.g., copper) disposed on a substrate is treated with a wet etching process by using this etching solution, the nitrogen containing five-member heterocyclic compound would form an organic protecting film on the first metal having higher reduction potential, so as to effectively avoid the second metal from being over etched resulted from the Galvanic effect.

Abstract: The present invention provides a process of etching or plating comprising the steps of: i) ink jet printing an alkali removeable water insoluble hot melt ink jet ink onto a substrate to form a resist image; ii) etching or plating the substrate in an aqueous acid medium; and iv) removing the resist image with an aqueous alkali.

Abstract: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles that comprise ceria, zirconia, silica, alumina, or a combination thereof, (b) a metal ion that is a Lewis Acid, (c) a ligand that is an aromatic carboxylic acid, an aromatic sulfonic acid, an aromatic acid amide, an amino acid, or a hydroxy-substituted N-heterocycle, and (d) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 4.

Abstract: A solution for processing devices is provided, comprising an activator comprising at least one of pyridine, pyrole, pyrrolidine, pyrimidine, N,N-dimethylformamide, tetraethylamine chloride, 4 pyridinethiol, or other organic compounds with a single N with a lone pair electron activator and an etchant comprising at least one of thionly chloride, Cl2, Br2, I2, SOF2, SOF4, SO2Cl2, SOBr2, S2O6F2, HSO3F, or C2Cl4O2.

Abstract: The object of the present invention is to provide an etching solution composition for etching a metal oxide containing In and a metal oxide containing Zn and In used as a transparent electrode or an oxide semiconductor of an electronic device such as a semiconductor element or a flat panel display (FPD), the etching solution composition being controllable to give a practical etching rate, having high dissolving power toward Zn, and enabling a long solution life due to suppressed variation of the formulation during use. The object is solved by an etching solution composition that enables microfabrication to be carried out for a metal oxide containing In and a metal oxide containing Zn and In used as a transparent electrode or an oxide semiconductor of an electronic device such as a semiconductor element or an FPD, the composition containing water and at least one type of acid, excluding hydrohalic acids, perhalic acids, etc., having an acid dissociation constant pKan at 25° C.

Abstract: Liquid compositions for etching glass are disclosed herein. The liquid composition may include a non-active etching agent precursor that is inactive with respect to chemically etching glass in an amount of at least 2.5% by weight of the total composition, a binder and a liquid vehicle. The precursor may include an alkali metal salt having an activation temperature of at least 400° C. and when heated to above the activation temperature, the precursor yields an active etching agent suitable for chemical etching of glass.

Abstract: The invention relates to a contact release capsule comprising a particle, a chemical payload, and a polymer coating, wherein the particle is impregnated with the chemical payload, and the chemical payload is held inside the particle by the polymer coating until the contact release capsule contacts a surface and a shearing force removes the polymer coating allowing the chemical payload to release outside the particle. The contact release capsule is useful in chemical mechanical planarization slurries. Particularly, the contact release capsule may comprise a glycine impregnated silica nanoparticle coated with a polymer, wherein the contact release capsule is dispersed in an aqueous solution and used in the copper chemical mechanical planarization process. Use of the contact release capsule in a slurry for copper chemical mechanical planarization may significantly improve planarization efficiency, decrease unwanted etching and corrosion, and improve dispersion stability.

Abstract: A polishing composition for a silicon wafer and a rinsing composition for a silicon wafer according to the present invention contain a nonionic surfactant of a polyoxyethylene adduct. The HLB value of the polyoxyethylene adduct is 8 to 15. The weight-average molecular weight of the polyoxyethylene adduct is 1400 or less. The average number of moles of oxyethylene added in the polyoxyethylene adduct is 13 or less. The content of the polyoxyethylene adduct in each of the polishing composition and the rinsing composition is 0.00001 to 0.1% by mass.

Abstract: Provided are novel chemical mechanical polishing (CMP) slurry compositions for polishing copper substrates and method of using the CMP compositions. The CMP slurry compositions deliver superior planarization with high and tunable removal rates and low defects when polishing bulk copper layers of the nanostructures of IC chips. The CMP slurry compositions also offer the high selectivity for polishing copper relative to the other materials (such as Ti, TiN, Ta, TaN, and Si), suitable for through-silicon via (TSV) CMP process which demands high copper film removal rates.

Abstract: Provided is a fine-processing agent which, when fine-processing a laminated film stacked at least with a silicon dioxide film and a silicon nitride film, can selectively fine-process the silicon dioxide film. Also provided is a fine-processing method utilizing the fine-processing agent. The fine-processing agent is characterized by including: (a) 0.01-15.0 weight % hydrogen fluoride and/or 0.1-40.0 weight % ammonium fluoride, (b) water, and (c) 0.001-10.00 weight % water-soluble polymer selected from among a group consisting of acrylic acid, ammonium acrylate, acrylic acid ester, acrylamide, styrenesulfonic acid, ammonium styrenesulfonate, and styrenesulfonic acid ester.

Abstract: The etching liquid composition of the present invention contains a ferric ion component; a hydrogen chloride component; and a component that is at least one type of compound selected from the group consisting of a compound represented by general formula (1) below and a straight chain or branched chain alcohol having 1 to 4 carbon atoms: wherein R1 and R3 are each independently a hydrogen atom or a straight chain or branched chain alkyl group having 1 to 4 carbon atoms, R2 is a straight chain or branched chain alkylene group having 1 to 4 carbon atoms, and n is a number between 1 and 3.

Abstract: Disclosed are a polishing composition and method of polishing a substrate. The composition has low-load (e.g., up to about 0.1 wt. %) of abrasive particles. The polishing composition also contains water and at least one anionic surfactant. In some embodiments, the abrasive particles are alpha alumina particles (e.g., coated with organic polymer). The polishing composition can be used, e.g., to polish a substrate of weak strength such as an organic polymer. An agent for oxidizing at least one of silicon and organic polymer is included in the composition in some embodiments.

Abstract: Methods and formulations for the selective etching of etch stop layers deposited above metal-based semiconductor layers used in the manufacture of TFT-based display devices are presented. The formulations are based on an alkaline solution. Methods and formulations for the selective etching of molybdenum-based and/or copper-based source/drain electrode layers deposited above metal-based semiconductor layers used in the manufacture of TFT-based display devices are presented. The formulations are based on an alkaline solution.

Abstract: A method is disclosed for polishing a wafer with a slurry. In the method, the wafer comprises at least one of silicon carbonitride (SiCN) and silicon nitride (SiN), and further comprises one or both of silicon dioxide (SiO2) and poly silicon, and a removal rate of SiCN is greater than a removal rate of poly silicon, and the removal rate of poly silicon is greater than a removal rate of SiO2, and where the slurry comprises up to about 15 wt % of surface-modified colloidal silica particles which have a primary particle size of less than about 35 nm, and the surface-modified colloidal silica particles comprise a plurality of acid moieties or salts thereof.

Abstract: An improved composition and method for cleaning a surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of the wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying a fluorine ion component, and the amounts of the fluorine ion component and an acid component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute.

Abstract: A glass etching medium and a method for etching the surface of a glass sheet to modify surface flaw characteristics without degrading the optical quality of the sheet surface, wherein the etching medium is a thickened aqueous acidic fluoride-containing paste comprising at least one dissolved, water-soluble, high-molecular-weight poly (ethylene oxide) polymer thickener.

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

Abstract: Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

Abstract: A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer.

Abstract: Provided is a polishing liquid which is used for chemical mechanical polishing of a body to be polished having a layer containing polysilicon or a modified polysilicon, and using which the polishing rate of a layer containing a silicon-based material other than polysilicon is high and polishing of the layer containing polysilicon can be selectively suppressed. The polishing liquid includes components (A), (B), and (C), has a pH of from 1.5 to 7.0, and is capable of selectively polishing a second layer with respect to a first layer: (A) colloidal silica particles having a negative ? potential; (B) phosphoric acid or an organic phosphonic acid compound represented by the following Formula (1) or (2); and (C) an anionic surfactant having at least one group represented by the following Formulae (I) to (IV): R2—C(R3)3-a—(PO3H2)a??Formula (1): R4—N(R5)m—(CH2—PO3H2)n??Formula (2): —PO3X2??Formula (I): —OPO3X2??Formula (II): —COOX??Formula (III): —SO3X??Formula (IV).

Abstract: Provided are novel chemical mechanical polishing (CMP) slurry compositions for polishing copper substrates and method of using the CMP compositions. The CMP slurry compositions deliver superior planarization with high and tunable removal rates and low defects when polishing bulk copper layers of the nanostructures of IC chips. The CMP slurry compositions also offer the high selectivity for polishing copper relative to the other materials (such as Ti, TiN, Ta, TaN, and Si), suitable for through-silicon via (TSV) CMP process which demands high copper film removal rates.