With Organic Material Patents (Class 252/79.4)
  • Patent number: 10125316
    Abstract: An etching solution and a manufacturing method of a display are provided. The etching solution includes hydrogen peroxide (H2O2), succinic acid, malonic acid, acetic acid, sulfuric acid, 1-amino-2-propanol, 5-amino-1H-tetrazole, N,N,N?N?-tetrakis(2-hydroxypropyl) ethylenediamine (EDTP) and glycine homogenously mixed in deionized water. Hydrogen peroxide is in an amount of 5-10 wt % of the etching solution, succinic acid is in an amount of 0.5-10 wt % of the etching solution, malonic acid is in an amount of 0.5-10 wt % of the etching solution, acetic acid is in an amount of 1-10 wt % of the etching solution, sulfuric acid is in an amount of 0.5-5 wt % of the etching solution, 1-amino-2-propanol is in an amount of 1-20 wt % of the etching solution, 5-amino-1H-tetrazole is in an amount of 0.01-0.5 wt % of the etching solution, EDTP is in an amount of 1-15 wt % of the etching solution, and glycine is in an amount of 1-5 wt % of the etching solution.
    Type: Grant
    Filed: November 15, 2017
    Date of Patent: November 13, 2018
    Assignee: INNOLUX CORPORATION
    Inventors: Po-Yun Hsu, Chi-Che Tsai, Ker-Yih Kao
  • Patent number: 10096486
    Abstract: In one embodiment, a substrate processing liquid contains phosphoric acid as a primary component and contains water and ketone. In another embodiment, a substrate processing method includes processing a substrate in a substrate processing bath with a substrate processing liquid containing phosphoric acid, water and ketone. The method further includes discharging the substrate processing liquid from the substrate processing bath to a circulating flow channel, heating the substrate processing liquid flowing through the circulating flow channel at a temperature between 50° C. and 90° C., and supplying the substrate processing liquid again from the circulating flow channel to the substrate processing bath to circulate the substrate processing liquid under heating.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: October 9, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Shinsuke Muraki, Katsuhiro Sato, Hiroaki Yamada
  • Patent number: 9875904
    Abstract: The present invention is able to provide: a silicon etching liquid which anisotropically dissolves single crystal silicon, and which is characterized by containing (1) potassium hydroxide or sodium hydroxide, (2) a hydroxyl amine and (3) a cyclic compound represented by general formula (I), which has a thiourea group and wherein N and N? are linked; and a silicon etching method which uses this silicon etching liquid. (In general formula (I), Q represents an organic group having a saturated or unsaturated carbon-carbon bond.) By using the above-described silicon etching liquid, high etching rate can be achieved without lowering the etching rate of silicon and stability of the etching liquid is not impaired even in cases where copper is present in the etching liquid and/or where copper ions are dissolved in the etching liquid.
    Type: Grant
    Filed: January 10, 2014
    Date of Patent: January 23, 2018
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventor: Yoshiko Fujioto
  • Patent number: 9679814
    Abstract: Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a flattened, pre-curved support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process includes bending the pre-curved support handle to have substantial curvature while peeling the epitaxial material from the substrate and forming an etch crevice therebetween. Compression is maintained within the epitaxial material during the etching process. The flattened, pre-curved support handle may be formed by flattening a pre-curved support material.
    Type: Grant
    Filed: May 27, 2015
    Date of Patent: June 13, 2017
    Assignee: ALTA DEVICES, INC.
    Inventors: Melissa Archer, Harry Atwater, Thomas Gmitter, Gang He, Andreas Hegedus, Gregg Higashi, Stewart Sonnenfeldt
  • Patent number: 9276128
    Abstract: A method for manufacturing a semiconductor device includes the steps of forming a first conductive film over a substrate; forming an insulating film over the first conductive film; forming an oxide semiconductor film over the insulating film to overlap with the first conductive film; forming a second conductive film including a metal film containing molybdenum as its main component and a metal film containing copper as its main component over the oxide semiconductor film; and etching the second conductive film by an etchant. At the time of etching the second conductive film by the etchant, the oxide semiconductor film is used as an etching stopper film. In addition, the etchant which can be used for a transistor including the oxide semiconductor film is provided.
    Type: Grant
    Filed: October 20, 2014
    Date of Patent: March 1, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasutaka Nakazawa, Shunsuke Koshioka, Takayuki Cho, Takahiro Sato
  • Patent number: 9263296
    Abstract: A chemical-mechanical polishing (“CMP”) composition (P) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of A/-heterocyclic compound as corrosion inhibitor, (C) at least one type of a further corrosion inhibitor selected from the group consisting of: (C1) an acetylene alcohol, and (C2) a salt or an adduct of (C2a) an amine, and (C2b) a carboxylic acid comprising an amide moiety, (D) at least one type of an oxidizing agent, (E) at least one type of a complexing agent, and (F) an aqueous medium.
    Type: Grant
    Filed: March 19, 2012
    Date of Patent: February 16, 2016
    Assignee: BASF SE
    Inventors: Bastian Noller, Michael Lauter, Albert Budiman Sugiharto, Yuzhuo Li, Kenneth Rushing, Diana Franz, Roland Böhn
  • Patent number: 9048195
    Abstract: Provided is a polishing fluid that has a fast polishing rate, and can selectively suppress polishing of layers including polysilicon or modified polysilicon during the chemical mechanical polishing in the manufacture of semiconductor integrated circuits, and a polishing method using the same. A polishing fluid used for the chemical mechanical polishing in which each of the components represented by the following (1) and (2) is included, the pH is 1.5 to 5.0, and a polishing workpiece can be polished in a range of a ratio represented by RR (other)/RR (p-Si) when the polishing rate of the first layer is RR (p-Si), and the polishing rate of the second layer is RR (other) of 1.5 to 200. (1) Colloidal silica particles (2) At least one inorganic phosphate compound selected from phosphoric acid, pyrophosphoric acid, and polyphosphoric acid.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: June 2, 2015
    Assignee: FUJIFILM Corporation
    Inventor: Tetsuya Kamimura
  • Publication number: 20150144591
    Abstract: The present invention can provide an etching composition for a chemical copper plating for the production of a printed-wiring board according to a semi-additive process, which comprises 0.2 to 5% by mass of hydrogen peroxide, 0.5 to 10% by mass of sulfuric acid, 0.001 to 0.3% by mass of phenylurea, 0.1 to 3 mass ppm of halogen ion and 0.003 to 0.3% by mass of tetrazoles, and wherein the ratio of the dissolution rate of the chemical copper plating (Y) to the dissolution rate of an electrolytic copper plating (X) at a liquid temperature of 30° C. (Y/X) is 4 to 7.
    Type: Application
    Filed: November 17, 2014
    Publication date: May 28, 2015
    Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Kenichi TAKAHASHI, Norifumi TASHIRO
  • Patent number: 9028708
    Abstract: An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, —the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, —a lower SER than at its start and the same or essentially the same MRR as at its start or—a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior.
    Type: Grant
    Filed: November 25, 2010
    Date of Patent: May 12, 2015
    Assignee: BASF SE
    Inventors: Vijay Immanuel Raman, Yuzhuo Li, Mario Brands, Yongqing Lan, Kenneth Rushing, Karpagavalli Ramji
  • Patent number: 9017571
    Abstract: A dry etching agent according to the present invention preferably contains: (A) 1,3,3,3-tetrafluoropropene; (B) at least one kind of additive gas selected from the group consisting of H2, O2, O3, CO, CO2, COCl2, COF2, CF3OF, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI, HBr, HCl, NO, NH3 and YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1?n?7); and (C) an inert gas. This dry etching agent has less effect on the global environment and can obtain a significant improvement in process window and address processing requirements such as low side etching ratio and high aspect ratio even without any special substrate excitation operation.
    Type: Grant
    Filed: June 24, 2011
    Date of Patent: April 28, 2015
    Assignee: Central Glass Company, Limited
    Inventors: Tomonori Umezaki, Yasuo Hibino, Isamu Mori, Satoru Okamoto, Akiou Kikuchi
  • Publication number: 20150104941
    Abstract: A barrier chemical mechanical planarization polishing composition is provided that includes suitable chemical additives. The suitable chemical additives are organic polymer molecules containing ethylene oxide repeating units having the general molecular structure of where n refers to the total numbers of the repeating unit ranging from 6,818 to 181,817; and the molecular weights of polyethylene oxide ranging from 100,000 to 8,000,000. There is also provided a chemical mechanical polishing method using the barrier chemical mechanical planarization polishing composition.
    Type: Application
    Filed: September 30, 2014
    Publication date: April 16, 2015
    Inventors: Maitland Gary Graham, JAMES ALLEN SCHLUETER, XIAOBO SHI
  • Patent number: 9005472
    Abstract: An aqueous polishing agent, comprising, as the abrasive, at least one kind of polymer particles (A) finely dispersed in the aqueous phase and having at their surface a plurality of at least one kind of functional groups (a1) capable of interacting with the metals and/or the metal oxides on top of the surfaces to be polished and forming complexes with the said metals and metal cations, the said polymer particles (A) being preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomer or polymer containing a plurality of functional groups (a1); graft copolymers preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomeric or polymeric aminotriazine-polyamine condensate; and a process for the chemical and mechanical polishing of patterned and unstructured metal surfaces making
    Type: Grant
    Filed: January 19, 2011
    Date of Patent: April 14, 2015
    Assignee: BASF SE
    Inventors: Vijay Immanuel Raman, Ilshat Gubaydullin, Mario Brands, Yuzhuo Li, Maxim Peretolchin
  • Patent number: 9005473
    Abstract: A method of removing at least a portion of a silicon oxide material is disclosed. The silicon oxide is removed by exposing a semiconductor structure comprising a substrate and the silicon oxide to an ammonium fluoride chemical treatment and a subsequent plasma treatment, both of which may be effected in the same vacuum chamber of a processing apparatus. The ammonium fluoride chemical treatment converts the silicon oxide to a solid reaction product in a self-limiting reaction, the solid reaction product then being volatilized by the plasma treatment. The plasma treatment includes a plasma having an ion bombardment energy of less than or equal to approximately 20 eV. An ammonium fluoride chemical treatment including an alkylated ammonia derivative and hydrogen fluoride is also disclosed.
    Type: Grant
    Filed: August 9, 2012
    Date of Patent: April 14, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Mark W. Kiehlbauch, J. Neil Greeley, Paul A. Morgan
  • Patent number: 8999185
    Abstract: The present invention provides a process of etching or plating comprising the steps of: i) ink jet printing an alkali removeable water insoluble hot melt ink jet ink onto a substrate to form a resist image; ii) etching or plating the substrate in an aqueous acid medium; and iv) removing the resist image with an aqueous alkali.
    Type: Grant
    Filed: August 6, 2007
    Date of Patent: April 7, 2015
    Assignee: Sun Chemical Corporation
    Inventor: Nigel Anthony Caiger
  • Patent number: 8999194
    Abstract: The present invention is to provide an etching solution capable of effectively reducing Galvanic effect, wherein the etching solution is obtained by way of dissolving an etchant and a nitrogen containing five-member heterocyclic compound in water. Thus, when at least one first metal (e.g., gold) and at least one second metal (e.g., copper) disposed on a substrate is treated with a wet etching process by using this etching solution, the nitrogen containing five-member heterocyclic compound would form an organic protecting film on the first metal having higher reduction potential, so as to effectively avoid the second metal from being over etched resulted from the Galvanic effect.
    Type: Grant
    Filed: February 24, 2014
    Date of Patent: April 7, 2015
    Assignee: E-Chem Enterprise Corp.
    Inventors: Cheng-Ying Tsai, Cheng-Kai Liao, Su-Fei Hsu
  • Patent number: 8999193
    Abstract: Chemical-mechanical polishing (CMP) compositions containing chemical additives and methods of using the CMP compositions are disclosed. The CMP composition comprises abrasive; chemical additive; liquid carrier; optionally an oxidizing agent; a pH buffering agent and salt; a surfactant and a biocide. The CMP compositions and the methods provide enhanced removing rate for “SiC”, SiN” and “SiCxNy” films; and tunable removal selectivity for “SiC” in reference to SiO2, “SiN” in reference to SiO2, “SiC” in reference to “SiN”, or “SiCxNy” in reference to SiO2; wherein x ranges from 0.1 wt % to 55 wt %, y ranges from 0.1 wt % to 32 wt %.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: April 7, 2015
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Xiaobo Shi, James Allen Schlueter, Maitland Gary Graham, Savka I. Stoeva, James Matthew Henry
  • Publication number: 20150083689
    Abstract: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles that comprise ceria, zirconia, silica, alumina, or a combination thereof, (b) a metal ion that is a Lewis Acid, (c) a ligand that is an aromatic carboxylic acid, an aromatic sulfonic acid, an aromatic acid amide, an amino acid, or a hydroxy-substituted N-heterocycle, and (d) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 4.
    Type: Application
    Filed: September 24, 2013
    Publication date: March 26, 2015
    Inventors: Sudeep PALLIKKARA KUTTIATOOR, Renhe Jia, Jeffrey Dysard
  • Publication number: 20150076396
    Abstract: Liquid compositions for etching glass are disclosed herein. The liquid composition may include a non-active etching agent precursor that is inactive with respect to chemically etching glass in an amount of at least 2.5% by weight of the total composition, a binder and a liquid vehicle. The precursor may include an alkali metal salt having an activation temperature of at least 400° C. and when heated to above the activation temperature, the precursor yields an active etching agent suitable for chemical etching of glass.
    Type: Application
    Filed: November 25, 2014
    Publication date: March 19, 2015
    Inventors: Matti BEN-MOSHE, Michael KHEYFETS
  • Publication number: 20150075850
    Abstract: The object of the present invention is to provide an etching solution composition for etching a metal oxide containing In and a metal oxide containing Zn and In used as a transparent electrode or an oxide semiconductor of an electronic device such as a semiconductor element or a flat panel display (FPD), the etching solution composition being controllable to give a practical etching rate, having high dissolving power toward Zn, and enabling a long solution life due to suppressed variation of the formulation during use. The object is solved by an etching solution composition that enables microfabrication to be carried out for a metal oxide containing In and a metal oxide containing Zn and In used as a transparent electrode or an oxide semiconductor of an electronic device such as a semiconductor element or an FPD, the composition containing water and at least one type of acid, excluding hydrohalic acids, perhalic acids, etc., having an acid dissociation constant pKan at 25° C.
    Type: Application
    Filed: September 18, 2014
    Publication date: March 19, 2015
    Applicant: Kanto Kagaku Kabushiki Kaisha
    Inventors: Takuo Ohwada, Toshikazu Shimizu
  • Publication number: 20150079786
    Abstract: A solution for processing devices is provided, comprising an activator comprising at least one of pyridine, pyrole, pyrrolidine, pyrimidine, N,N-dimethylformamide, tetraethylamine chloride, 4 pyridinethiol, or other organic compounds with a single N with a lone pair electron activator and an etchant comprising at least one of thionly chloride, Cl2, Br2, I2, SOF2, SOF4, SO2Cl2, SOBr2, S2O6F2, HSO3F, or C2Cl4O2.
    Type: Application
    Filed: September 17, 2013
    Publication date: March 19, 2015
    Inventors: Samantha S.H. Tan, Alexander Kabansky, Joydeep Guha
  • Patent number: 8980122
    Abstract: The invention relates to a contact release capsule comprising a particle, a chemical payload, and a polymer coating, wherein the particle is impregnated with the chemical payload, and the chemical payload is held inside the particle by the polymer coating until the contact release capsule contacts a surface and a shearing force removes the polymer coating allowing the chemical payload to release outside the particle. The contact release capsule is useful in chemical mechanical planarization slurries. Particularly, the contact release capsule may comprise a glycine impregnated silica nanoparticle coated with a polymer, wherein the contact release capsule is dispersed in an aqueous solution and used in the copper chemical mechanical planarization process. Use of the contact release capsule in a slurry for copper chemical mechanical planarization may significantly improve planarization efficiency, decrease unwanted etching and corrosion, and improve dispersion stability.
    Type: Grant
    Filed: July 5, 2012
    Date of Patent: March 17, 2015
    Assignee: General Engineering & Research, L.L.C.
    Inventor: Robin Ihnfeldt
  • Patent number: 8974692
    Abstract: Provided are novel chemical mechanical polishing (CMP) slurry compositions for polishing copper substrates and method of using the CMP compositions. The CMP slurry compositions deliver superior planarization with high and tunable removal rates and low defects when polishing bulk copper layers of the nanostructures of IC chips. The CMP slurry compositions also offer the high selectivity for polishing copper relative to the other materials (such as Ti, TiN, Ta, TaN, and Si), suitable for through-silicon via (TSV) CMP process which demands high copper film removal rates.
    Type: Grant
    Filed: June 27, 2013
    Date of Patent: March 10, 2015
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Xiaobo Shi, Krishna Murella, James Allen Schlueter, Jae Ouk Choo
  • Patent number: 8974685
    Abstract: Provided is a fine-processing agent which, when fine-processing a laminated film stacked at least with a silicon dioxide film and a silicon nitride film, can selectively fine-process the silicon dioxide film. Also provided is a fine-processing method utilizing the fine-processing agent. The fine-processing agent is characterized by including: (a) 0.01-15.0 weight % hydrogen fluoride and/or 0.1-40.0 weight % ammonium fluoride, (b) water, and (c) 0.001-10.00 weight % water-soluble polymer selected from among a group consisting of acrylic acid, ammonium acrylate, acrylic acid ester, acrylamide, styrenesulfonic acid, ammonium styrenesulfonate, and styrenesulfonic acid ester.
    Type: Grant
    Filed: May 21, 2009
    Date of Patent: March 10, 2015
    Assignee: Stella Chemifa Corporation
    Inventors: Masayuki Miyashita, Takanobu Kujime, Keiichi Nii
  • Patent number: 8974691
    Abstract: A polishing composition for a silicon wafer and a rinsing composition for a silicon wafer according to the present invention contain a nonionic surfactant of a polyoxyethylene adduct. The HLB value of the polyoxyethylene adduct is 8 to 15. The weight-average molecular weight of the polyoxyethylene adduct is 1400 or less. The average number of moles of oxyethylene added in the polyoxyethylene adduct is 13 or less. The content of the polyoxyethylene adduct in each of the polishing composition and the rinsing composition is 0.00001 to 0.1% by mass.
    Type: Grant
    Filed: September 20, 2011
    Date of Patent: March 10, 2015
    Assignee: Fujimi Incorporated
    Inventors: Kohsuke Tsuchiya, Shuhei Takahashi
  • Publication number: 20150053888
    Abstract: The etching liquid composition of the present invention contains a ferric ion component; a hydrogen chloride component; and a component that is at least one type of compound selected from the group consisting of a compound represented by general formula (1) below and a straight chain or branched chain alcohol having 1 to 4 carbon atoms: wherein R1 and R3 are each independently a hydrogen atom or a straight chain or branched chain alkyl group having 1 to 4 carbon atoms, R2 is a straight chain or branched chain alkylene group having 1 to 4 carbon atoms, and n is a number between 1 and 3.
    Type: Application
    Filed: December 25, 2012
    Publication date: February 26, 2015
    Inventors: Yuta Taguchi, Kouta Saitoh
  • Patent number: 8961807
    Abstract: Disclosed are a polishing composition and method of polishing a substrate. The composition has low-load (e.g., up to about 0.1 wt. %) of abrasive particles. The polishing composition also contains water and at least one anionic surfactant. In some embodiments, the abrasive particles are alpha alumina particles (e.g., coated with organic polymer). The polishing composition can be used, e.g., to polish a substrate of weak strength such as an organic polymer. An agent for oxidizing at least one of silicon and organic polymer is included in the composition in some embodiments.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: February 24, 2015
    Assignee: Cabot Microelectronics Corporation
    Inventors: Lin Fu, Steven Grumbine
  • Patent number: 8961814
    Abstract: Methods and formulations for the selective etching of etch stop layers deposited above metal-based semiconductor layers used in the manufacture of TFT-based display devices are presented. The formulations are based on an alkaline solution. Methods and formulations for the selective etching of molybdenum-based and/or copper-based source/drain electrode layers deposited above metal-based semiconductor layers used in the manufacture of TFT-based display devices are presented. The formulations are based on an alkaline solution.
    Type: Grant
    Filed: December 18, 2013
    Date of Patent: February 24, 2015
    Assignee: Intermolecular, Inc.
    Inventors: Jeroen Van Duren, Zhi-Wen Wen Sun
  • Publication number: 20150044872
    Abstract: A method is disclosed for polishing a wafer with a slurry. In the method, the wafer comprises at least one of silicon carbonitride (SiCN) and silicon nitride (SiN), and further comprises one or both of silicon dioxide (SiO2) and poly silicon, and a removal rate of SiCN is greater than a removal rate of poly silicon, and the removal rate of poly silicon is greater than a removal rate of SiO2, and where the slurry comprises up to about 15 wt % of surface-modified colloidal silica particles which have a primary particle size of less than about 35 nm, and the surface-modified colloidal silica particles comprise a plurality of acid moieties or salts thereof.
    Type: Application
    Filed: August 6, 2014
    Publication date: February 12, 2015
    Applicant: FUJIMI INCORPORATED
    Inventors: Fusayo SAEKI, Hooi-Sung KIM
  • Patent number: 8951433
    Abstract: An improved composition and method for cleaning a surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of the wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying a fluorine ion component, and the amounts of the fluorine ion component and an acid component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute.
    Type: Grant
    Filed: December 27, 2013
    Date of Patent: February 10, 2015
    Assignee: Micron Technology, Inc.
    Inventor: Donald L. Yates
  • Patent number: 8951434
    Abstract: A glass etching medium and a method for etching the surface of a glass sheet to modify surface flaw characteristics without degrading the optical quality of the sheet surface, wherein the etching medium is a thickened aqueous acidic fluoride-containing paste comprising at least one dissolved, water-soluble, high-molecular-weight poly (ethylene oxide) polymer thickener.
    Type: Grant
    Filed: May 8, 2013
    Date of Patent: February 10, 2015
    Assignee: Corning Incorporated
    Inventors: Timothy Edward Myers, Shyamala Shanmugam, Alan Thomas Stephens, II, Matthew John Towner, Kevin William Uhlig, Lu Zhang
  • Publication number: 20150027978
    Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.
    Type: Application
    Filed: December 27, 2012
    Publication date: January 29, 2015
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Jeffrey A. Barnes, Emanuel I. Cooper, Li-Min Chen, Steven Lippy, Rekha Rajaram, Sheng-Hung Tu
  • Patent number: 8940182
    Abstract: Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: January 27, 2015
    Assignees: Samsung Electronics Co., Ltd., Soulbrain Co., Ltd.
    Inventors: Young-Taek Hong, Jinuk Lee, Junghun Lim, Jaewan Park, Chanjin Jeong, Hoon Han, Seonghwan Park, Yanghwa Lee, Sang Won Bae, Daehong Eom, Byoungmoon Yoon, Jihoon Jeong, Kyunghyun Kim, Kyounghwan Kim, ChangSup Mun, Se-Ho Cha, Yongsun Ko
  • Publication number: 20150021513
    Abstract: A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer.
    Type: Application
    Filed: June 23, 2014
    Publication date: January 22, 2015
    Inventors: Yun-Jeong KIM, Sang-Kyun KIM, Kwang-Bok KIM, Ye-Hwan KIM, Jung-Sik CHOI, Choong-Ho HAN, Gi-Sik HONG
  • Patent number: 8932479
    Abstract: Provided is a polishing liquid which is used for chemical mechanical polishing of a body to be polished having a layer containing polysilicon or a modified polysilicon, and using which the polishing rate of a layer containing a silicon-based material other than polysilicon is high and polishing of the layer containing polysilicon can be selectively suppressed. The polishing liquid includes components (A), (B), and (C), has a pH of from 1.5 to 7.0, and is capable of selectively polishing a second layer with respect to a first layer: (A) colloidal silica particles having a negative ? potential; (B) phosphoric acid or an organic phosphonic acid compound represented by the following Formula (1) or (2); and (C) an anionic surfactant having at least one group represented by the following Formulae (I) to (IV): R2—C(R3)3-a—(PO3H2)a??Formula (1): R4—N(R5)m—(CH2—PO3H2)n??Formula (2): —PO3X2??Formula (I): —OPO3X2??Formula (II): —COOX??Formula (III): —SO3X??Formula (IV).
    Type: Grant
    Filed: March 25, 2011
    Date of Patent: January 13, 2015
    Assignee: FUJIFILM Corporation
    Inventor: Tetsuya Kamimura
  • Publication number: 20150004788
    Abstract: Provided are novel chemical mechanical polishing (CMP) slurry compositions for polishing copper substrates and method of using the CMP compositions. The CMP slurry compositions deliver superior planarization with high and tunable removal rates and low defects when polishing bulk copper layers of the nanostructures of IC chips. The CMP slurry compositions also offer the high selectivity for polishing copper relative to the other materials (such as Ti, TiN, Ta, TaN, and Si), suitable for through-silicon via (TSV) CMP process which demands high copper film removal rates.
    Type: Application
    Filed: June 27, 2013
    Publication date: January 1, 2015
    Inventors: Xiaobo SHI, Krishna MURELLA, James Allen SCHLUETER, Jae Ouk CHOO
  • Patent number: 8920667
    Abstract: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles, wherein the abrasive particles comprise zirconia, (b) at least one metal ion oxidizer, wherein the at least one metal ion oxidizer comprises metal ions of Co3+, Au+, Ag+, Pt2+, Hg2+, Cr3+, Fe3+, Ce4+, or Cu2+, and (c) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 7, and wherein the chemical-mechanical polishing composition does not contain a peroxy-type oxidizer.
    Type: Grant
    Filed: January 30, 2013
    Date of Patent: December 30, 2014
    Assignee: Cabot Microelectronics Corporation
    Inventors: Lin Fu, Steven Grumbine, Matthias Stender
  • Patent number: 8916479
    Abstract: Provided are methods for processing semiconductor substrates having titanium nitride (TiN) structures as well as aluminum (Al) structures and, in some embodiments, other structures, such as silicon germanium (SiGe), tantalum nitride (TaN), hafnium oxide (HfOx), silicon nitride (SiN), and/or silicon oxide (SiO2) structures. Etching solutions and processing conditions described herein provide high etching selectivity of titanium nitride relative to these other materials. As such, the titanium nitride structures can be removed (partially or completely) without significant damage to these other structures. In some embodiments, the etching rate of titanium nitride is at least about 200 Angstroms per minute and even at least about 350 Angstroms per minute, while the etching rate of aluminum and/or other materials is less than 15 Angstroms per minute. An etching solution may be kept at 40° C. to 65° C. and may include ammonium hydroxide and hydrogen peroxide (between 1:600 and 1:3,000 by weight).
    Type: Grant
    Filed: June 10, 2013
    Date of Patent: December 23, 2014
    Assignee: Intermolecular, Inc.
    Inventor: Gregory Nowling
  • Patent number: 8916061
    Abstract: The invention relates to a chemical-mechanical polishing composition comprising a ceria abrasive, cations of one or more lanthanide metals, one or more nonionic polymers, water, and optionally one or more additives. The invention further relates to a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises one or more of silicon oxide, silicon nitride, and polysilicon.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: December 23, 2014
    Assignee: Cabot Microelectronics Corporation
    Inventors: Brian Reiss, Michael Willhoff, Daniel Mateja
  • Patent number: 8911643
    Abstract: A polishing liquid which is used for chemical mechanical polishing of a body to be polished in a planarization process for manufacturing of a semiconductor integrated circuit, the body to be polished including at least a first layer containing polysilicon or modified polysilicon and a second layer containing at least one selected from the group consisting of silicon oxide, silicon nitride, silicon carbide, silicon carbonitride, silicon oxycarbide, and silicon oxynitride, the polishing liquid having a pH of 1.5 to 7.0, including (1) colloidal silica particles, (2) an organic acid, and (3) an anionic surfactant, and being capable of selectively polishing the second layer with respect to the first layer.
    Type: Grant
    Filed: May 28, 2009
    Date of Patent: December 16, 2014
    Assignee: FUJIFILM Corporation
    Inventor: Tetsuya Kamimura
  • Patent number: 8911558
    Abstract: A post-W CMP cleaning solution consists of carboxylic acid and deionized water. The carboxylic acid may be selected from the group consisting of (1) monocarboxylic acids; (2) dicarboxylic acids; (3) tricarboxylic acids; (4) polycarboxylic acids; (5) hydroxycarboxylic acids; (6) salts of the above-described carboxylic acids; and (7) any combination thereof. The post-W CMP cleaning solution can work well without adding any other chemical additives such as surfactants, corrosion inhibitors, pH adjusting agents or chelating agents.
    Type: Grant
    Filed: March 23, 2011
    Date of Patent: December 16, 2014
    Assignee: Nanya Technology Corp.
    Inventors: Hongqi Li, Anurag Jindal, Jin Lu
  • Patent number: 8906253
    Abstract: A gap embedding composition used for embedding a patterned gap formed between photosensitive resin film portions on a semiconductor substrate surface, the gap embedding composition, at least having: a hydrolysis condensate of an aryloxysilane raw material; and an aromatic compound, as a solvent.
    Type: Grant
    Filed: May 30, 2013
    Date of Patent: December 9, 2014
    Assignee: FUJIFILM Corporation
    Inventor: Keiji Yamamoto
  • Patent number: 8900478
    Abstract: Disclosed are an etchant which is used for redistribution of a semiconductor substrate having an electrode and which is capable of selectively etching copper without etching nickel; and a method for manufacturing a semiconductor device using the same. Specifically disclosed are an etchant which is used for redistribution of a semiconductor substrate and which contains hydrogen peroxide and citric acid and has a content of hydrogen peroxide of from 0.75 to 12% by mass and a content of citric acid of from 1 to 20% by mass, with a molar ratio of hydrogen peroxide and citric acid being in the range of from 0.3 to 5; an etchant for selective etching of copper which is used for redistribution of a semiconductor substrate and which contains hydrogen peroxide and malic acid and has a content of hydrogen peroxide of from 0.75 to 12% by mass and a content of malic acid of from 1.5 to 25% by mass, with a molar ratio of hydrogen peroxide and malic acid being in the range of from 0.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: December 2, 2014
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Akira Hosomi, Kensuke Ohmae
  • Patent number: 8900472
    Abstract: A liquid agent for the surface treatment of monocrystalline wafers, which contains an alkaline etching agent and also at least one low-volatile organic compound. Systems of this type can be used both for the cleaning, damage etch and texturing of wafer surfaces in a single etching step and exclusively for the texturing of silicon wafers with different surface quality, whether it now be wire-sawn wafers with high surface damage or chemically polished surfaces with minimum damage density.
    Type: Grant
    Filed: June 2, 2010
    Date of Patent: December 2, 2014
    Assignee: Fraunhofer-Gesellschaft zur Föerderung der angewandten Forschung E.V.
    Inventors: Kuno Mayer, Mark Schumann, Daniel Kray, Teresa Orellana Peres, Jochen Rentsch, Martin Zimmer, Elias Kirchgässner, Eva Zimmer, Daniel Biro, Arpad Mihai Rostas, Filip Granek
  • Publication number: 20140346138
    Abstract: A polishing composition for a magnetic disk substrate of the present invention includes water, silica particles, and at least one or more selected from an acid, a salt of the acid, and an oxidizing agent. The silica particles are observed with a transmission electron microscope to measure a maximum diameter and a projected area of each particle, and a value obtained by dividing the area of a circle whose diameter is the maximum diameter of a silica particle by the projected area of the silica particle and multiplying the result by 100, is in the range of 100 to 130.
    Type: Application
    Filed: August 12, 2014
    Publication date: November 27, 2014
    Inventors: Yoshiaki OSHIMA, Norihito YAMAGUCHI, Haruhiko DOI
  • Patent number: 8889555
    Abstract: A polishing agent for copper polishing, comprising (A) an inorganic acid with divalent or greater valence, (B) an amino acid, (C) a protective film-forming agent, (D) an abrasive, (E) an oxidizing agent and (F) water, wherein the content of the component (A) is at least 0.08 mol/kg, the content of the component (B) is at least 0.20 mol/kg, the content of the component (C) is at least 0.02 mol/kg, and either or both of the following conditions (i) and (ii) are satisfied. (i): The proportion of the content of the component (A) with respect to the content of the component (C) is 2.00 or greater. (ii): It further comprises (G) at least one kind selected from among organic acids and their acid anhydrides.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: November 18, 2014
    Assignee: Hitachi Chemical Co., Ltd.
    Inventors: Hiroshi Ono, Takashi Shinoda, Yuuhei Okada
  • Patent number: 8889032
    Abstract: A metal wire etchant including persulfate, a sulfonate, a fluorine compound, an azole-based compound, an organic acid, a nitrate, and a chlorine compound, and a method of making the same.
    Type: Grant
    Filed: December 27, 2012
    Date of Patent: November 18, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jong-Hyun Choung, In-Bae Kim, Seon-II Kim, Hong Sick Park, Jae Woo Jeong, Gyu-Po Kim, Won-Guk Seo, Hyun-Cheol Shin, Ki-Beom Lee, Sam-Young Cho, Seung-Yeon Han
  • Patent number: 8883034
    Abstract: The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increases the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition.
    Type: Grant
    Filed: September 16, 2009
    Date of Patent: November 11, 2014
    Inventors: Brian Reiss, John Clark, Lamon Jones, Jeffrey Gilliland, Michael White
  • Patent number: 8877082
    Abstract: Disclosed is a processing method which can achieve a high processing rate, and is capable of making a surface smooth. In order to achieve this an SiC substrate is arranged in a potassium hydroxide solution containing hydrogen peroxide, and ultraviolent radiation is irradiated on the surface of the SiC substrate. An SiO2 layer is formed on the surface of the SiC substrate due to the irradiation of ultraviolet radiation, and this SiO2 layer is chemically removed by means of the potassium hydroxide solution, and also removed by a synthetic quartz surface plate.
    Type: Grant
    Filed: March 18, 2011
    Date of Patent: November 4, 2014
    Assignee: National University Corporation Kumamoto University
    Inventors: Akihisa Kubota, Mutsumi Touge
  • Publication number: 20140306147
    Abstract: A chrome-free acidic aqueous solution of sulfuric acid and one or more organic acids and manganese (II) and (III) ions is applied to an organic polymer surface to etch the surface. The etched surface is then plated with metal.
    Type: Application
    Filed: April 16, 2013
    Publication date: October 16, 2014
    Inventor: Rohm and Haas Electronic Materials LLC
  • Patent number: 8859428
    Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
    Type: Grant
    Filed: September 18, 2013
    Date of Patent: October 14, 2014
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steve Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai