With Organic Material Patents (Class 252/79.4)
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Patent number: 8518297Abstract: The present invention provides a polishing composition that can be suitably used in polishing of polysilicon, and a polishing method using the polishing composition. The polishing composition contains abrasive grains and an anionic surfactant having a monooxyethylene group or a polyoxyethylene group and has a pH of 9 to 12. If the anionic surfactant contained in the polishing composition has a polyoxyethylene group, the number of repeating oxyethylene units in the polyoxyethylene group is preferably 2 to 8. The anionic surfactant contained in the polishing composition can be an anionic surfactant that has a phosphate group, a carboxy group, or a sulfo group as well as a monooxyethylene group or a polyoxyethylene group. The content of the anionic surfactant in the polishing composition is preferably 20 to 500 ppm.Type: GrantFiled: January 30, 2009Date of Patent: August 27, 2013Assignee: Fujimi IncorporatedInventors: Mikikazu Shimizu, Tomohiko Akatsuka, Kazuya Sumita
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Patent number: 8518296Abstract: A slurry for polishing a phase change material, such as Ge—Sb—Te, or germanium-antimony-tellurium (GST), includes abrasive particles of sizes that minimize at least one of damage to (e.g., scratching of) a polished surface of phase change material, an amount of force to be applied during polishing, and a static etch rate of the phase change material, while optionally providing selectivity for the phase change material over adjacent dielectric materials. A polishing method includes applying a slurry with one or more of the above-noted properties to a phase change material, as well as bringing the polishing pad into frictional contact with the phase change material. Polishing systems are disclosed that include a plurality of sources of solids (e.g., abrasive particles) and provide for selectivity in the solids that are applied to a substrate or polishing pad.Type: GrantFiled: February 14, 2007Date of Patent: August 27, 2013Assignee: Micron Technology, Inc.Inventors: Zhenyu Lu, Jun Liu
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Publication number: 20130217231Abstract: A chemical mechanical polishing (CMP) composition Abstract Use of a chemical mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a mixture thereof, (B) a heteropolyacid or a salt thereof, (C) a salt comprising chloride, fluoride, bromide, or a mixture thereof as anion, and (D) an aqueous medium, for polishing a substrate comprising a self-passivating metal, germanium, nickel phosphorous (NiP), or a mixture thereof.Type: ApplicationFiled: October 4, 2011Publication date: August 22, 2013Applicant: BASF SEInventors: Bettina Drescher, Bastian Marten Noller, Christine Schmitt, Albert Budiman Sugiharto, Yuzhuo Li
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Patent number: 8512593Abstract: Provided herein are chemical mechanical polishing (CMP) slurries and methods for producing the same. Embodiments of the invention include CMP slurries that include (a) a metal oxide; (b) a pH-adjusting agent; (c) a fluorinated surfactant; and (d) a quaternary ammonium surfactant. In some embodiments, the fluorinated surfactant is a non-ionic perfluoroalkyl sulfonyl compound. Also provided herein are methods of polishing a polycrystalline silicon surface, including providing a slurry composition according to an embodiment of the invention to a polycrystalline silicon surface and performing a CMP process to polish the polycrystalline silicon surface.Type: GrantFiled: November 22, 2006Date of Patent: August 20, 2013Assignee: Cheil Industries, Inc.Inventors: Jae Hoon Choung, In Kyung Lee
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Patent number: 8513126Abstract: A chemical mechanical polishing slurry composition is provided, having, as initial components: water; an abrasive, wherein the abrasive is colloidal silica abrasive; a halogenated quaternary ammonium compound according to formula (I); optionally, a diquaternary substance according to formula (II); and, optionally, a pH adjusting agent selected from phosphoric acid, nitric acid, sulfuric acid, hydrochloric acid, ammonium hydroxide and potassium hydroxide; wherein the chemical mechanical polishing slurry composition has a pH of 2 to <7. Also, provided are methods for making the chemical mechanical polishing slurry composition and for using the chemical mechanical polishing composition to polish a substrate.Type: GrantFiled: September 22, 2010Date of Patent: August 20, 2013Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Zhendong Liu, Yi Guo, Kancharla-Arun Kumar Reddy, Guangyun Zhang
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Publication number: 20130207030Abstract: Exposed copper regions on a semiconductor substrate can be etched by a wet etching solution comprising (i) one or more complexing agents selected from the group consisting of bidentate, tridentate, and quadridentate complexing agents; and (ii) an oxidizer, at a pH of between about 5 and 12. In many embodiments, the etching is substantially isotropic and occurs without visible formation of insoluble species on the surface of copper. The etching is useful in a number of processes in semiconductor fabrication, including for partial or complete removal of copper overburden, for planarization of copper surfaces, and for forming recesses in copper-filled damascene features. Examples of suitable etching solutions include solutions comprising a diamine (e.g., ethylenediamine) and/or a triamine (e.g., diethylenetriamine) as bidentate and tridentate complexing agents respectively and hydrogen peroxide as an oxidizer.Type: ApplicationFiled: December 21, 2012Publication date: August 15, 2013Inventors: Steven T. MAYER, Eric WEBB, David W. PORTER
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Patent number: 8506831Abstract: A combination, composition and associated method for chemical mechanical planarization of a tungsten-containing substrate are described herein which afford tunability of tungsten/dielectric selectivity and low selectivity for tungsten removal in relation to dielectric material. Removal rates for both tungsten and dielectric are high and stability of the slurry (e.g., with respect to pH drift over time) is high.Type: GrantFiled: December 3, 2009Date of Patent: August 13, 2013Assignee: Air Products and Chemicals, Inc.Inventors: Dianne Rachel McConnell, Ann Marie Hurst
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Patent number: 8491809Abstract: A process for producing an aluminum wheel includes a cleaning step, in which the surface of the aluminum wheel is chemically etched with an alkali cleaning liquid which contains an alkali builder, an organic builder, and a chelating agent to such an extent that the Si atomic ratio of metal Si to oxide Si is from 0.01 to 9, and a shot blast treatment step can be omitted for cleaning the surface of the aluminum wheel.Type: GrantFiled: August 19, 2009Date of Patent: July 23, 2013Assignees: Central Motor Wheel Co., Ltd., Nihon Parkerizing Co., Ltd.Inventors: Takeshi Yamada, Yoshitomo Fujii, Hiroyuki Sato, Soichi Nomoto
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Patent number: 8492276Abstract: A chemical mechanical polishing aqueous dispersion is used to polish a polishing target that includes an interconnect layer that contains tungsten. The chemical mechanical polishing aqueous dispersion includes: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica particles. The content (MA) (mass %) of the cationic water-soluble polymer (A) and the content (MB) (mass %) of the iron (III) compound (B) satisfy the relationship “MA/MB=0.004 to 0.1”. The chemical mechanical polishing aqueous dispersion has a pH of 1 to 3.Type: GrantFiled: August 7, 2009Date of Patent: July 23, 2013Assignees: JSR Corporation, Kabushiki Kaisha ToshibaInventors: Taichi Abe, Hirotaka Shida, Akihiro Takemura, Mitsuru Meno, Shinichi Hirasawa, Kenji Iwade, Takeshi Nishioka
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Publication number: 20130180947Abstract: An etching composition that includes, based on the total weight of the etching composition, from about 0.05% to about 15% by weight of a halogen-containing compound, from about 0.1% to about 20% by weight of a nitrate compound, from about 0.1% to about 10% by weight of an acetate compound, from about 0.1% to about 10% by weight of a cyclic amine compound, from about 0% to about 50% by weight of a polyhydric alcohol, and a remainder of water.Type: ApplicationFiled: August 17, 2012Publication date: July 18, 2013Applicants: Soulbrain Co., Ltd., Samsung Display Co., Ltd.Inventors: In-Bae KIM, Jae-Woo JEONG, Sang-Gab KIM, Ji-Young PARK, Jong-Hyun CHOUNG, Seon-il KIM, Yong-Sung SONG, Jong-Hyun OH
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Patent number: 8486282Abstract: Surface texturing of the transparent conductive oxide (TCO) front contact of a thin film photovoltaic (TFPV) solar cell is needed to enhance the light-trapping capability of the TFPV solar cells and thus improving the solar cell efficiency. Embodiments of the current invention describe chemical formulations and methods for the wet etching of the TCO. The formulations and methods may be optimized to tune the surface texturing of the TCO as desired.Type: GrantFiled: March 22, 2010Date of Patent: July 16, 2013Assignee: Intermolecular, Inc.Inventors: Zhi-Wen Sun, Nitin Kumar, Guizhen Zhang, Minh Anh Nguyen, Nikhil Kalyankar
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Publication number: 20130175238Abstract: This invention relates to an etching solution including hydrogen peroxide, sulfuric acid, chlorine ions, benzotriazole and pyrazole, and to a method of manufacturing a printed wiring substrate wherein the surface of the metal wiring of the printed wiring substrate is treated with an alkali solution, roughened using the etching solution and then subjected to anti-rust treatment, thus forming porous surface irregularities and micro anchors even with a small etching amount of the metal (Cu) to thereby obtain a high force of adhesion between the metal and an insulating material.Type: ApplicationFiled: May 17, 2012Publication date: July 11, 2013Applicants: Samyoung Pure Chemicals Co., Ltd., SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Dae Jo HONG, Chang Bo LEE, Cheol Ho CHOI, Chang Sup RYU, Sung Pyo HONG, Jong Hoon JEON, Akira HOSOMI, Hiroshi TAKAMIYA
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Publication number: 20130178065Abstract: A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low within a wafer non-uniformity values and low residue levels remaining after polishing.Type: ApplicationFiled: March 4, 2013Publication date: July 11, 2013Applicant: Air Products and Chemicals, Inc.Inventor: Air Products and Chemicals, Inc.
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Patent number: 8480920Abstract: A chemical mechanical polishing aqueous dispersion that is used to polish a polishing target that includes a wiring layer that contains tungsten, the chemical mechanical polishing aqueous dispersion including: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica having an average particle diameter calculated from a specific surface area determined by the BET method of 10 to 60 nm, the content (MA) (mass %) of the cationic water-soluble polymer (A) and the content (MC) (mass %) of the colloidal silica (C) satisfying the relationship “MA/MC=0.0001 to 0.003”, and the chemical mechanical polishing aqueous dispersion having a pH of 1 to 3.Type: GrantFiled: March 30, 2010Date of Patent: July 9, 2013Assignee: JSR CorporationInventors: Hirotaka Shida, Akihiro Takemura, Taichi Abe
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Publication number: 20130157427Abstract: The present invention provides an etching composition, comprising a silyl phosphate compound, phosphoric acid and deionized water, and a method for fabricating a semiconductor, which includes an etching process employing the etching composition. The etching composition of the invention shows a high etching selectivity for a nitride film with respect to an oxide film. Thus, when the etching composition of the present invention is used to remove a nitride film, the effective field oxide height (EEH) may be easily controlled by controlling the etch rate of the oxide film. In addition, the deterioration in electrical characteristics caused by damage to an oxide film or etching of the oxide film may be prevented, and particle generation may be prevented, thereby ensuring the stability and reliability of the etching process.Type: ApplicationFiled: December 7, 2012Publication date: June 20, 2013Applicants: Soulbrain Co., Ltd., SK hynix Inc.Inventors: SK hynix Inc., Soulbrain Co., Ltd.
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Patent number: 8465662Abstract: Provided is an etching composition for electively removing silicon dioxide at a high etch rate, more particularly, a composition for wet etching of silicon dioxide, including 1 to 40 wt % of hydrogen fluoride (HF); 5 to 40 wt % of ammonium hydrogen fluoride (NH4HF2); and water, and further including a surfactant to improve selectivity of the silicon dioxide and a silicon nitride film. Since the composition for wet etching of silicon dioxide has the high etch selectivity of the silicon dioxide to the silicon nitride film, it is useful for selectively removing silicon dioxide.Type: GrantFiled: September 21, 2010Date of Patent: June 18, 2013Assignee: Techno Semichem Co., Ltd.Inventors: Jung Hun Lim, Dae Hyun Kim, Chang Jin Yoo, Seong Hwan Park
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Publication number: 20130140273Abstract: A slurry for chemical mechanical polishing of Co. The slurry comprises components by weight as follows, Inhibitor 0.01-2%, Oxidant 0-5%, Abrasive 0.1-10%, Complexing agent 0.001-10%, and the rest of water. The pH value of the slurries is adjusted to 3-5 by a pH value adjustor. The inhibitor is chosen from one or more kinds of five-membered heterocycle compound containing S and N atoms or containing S or N atom. The oxidant is one or more chosen from H2O2, (NH4)2S2O8, KIO4, and KClO5. The abrasive is one or more chosen from SiO2, CeO2, and Al2O3. The complexing agent is one or more chosen from amino acid and citric acid. The slurry can effectively prevent Co over corrosion and reduce the polishing rate of Co in the polishing process.Type: ApplicationFiled: December 5, 2011Publication date: June 6, 2013Inventors: Haisheng Lu, Xinping Qu, Jingxuan Wang
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Publication number: 20130130508Abstract: Texturing composition for texturing silicon wafers having one or more surfactants. Methods of texturing silicon wafers having the step of wetting said wafer with a texturing composition having one or more surfactants.Type: ApplicationFiled: May 18, 2012Publication date: May 23, 2013Applicant: Air Products and Chemicals, Inc.Inventors: Aiping Wu, Madhukar Bhaskara Rao, Dnyanesh Chandrakant Tamboli
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Publication number: 20130130500Abstract: A composition for the removal of nickel-platinum alloy metal, said composition being characterised by including 3-55 mass % of at least one kind selected from the group consisting of hydrochloric acid, hydrobromic acid, and nitric acid, 0.5-20 mass % of a chelating agent other than oxalic acid, 0.1-4 mass % of an anionic surfactant, and water; and also characterised by not including fluorine-containing compounds or hydrogen peroxide, and having a pH of 1 or less. Nickel-platinum alloy metal can be selectively removed without damaging silicon substrate material.Type: ApplicationFiled: July 19, 2011Publication date: May 23, 2013Applicant: SHOWA DENKO K.K.Inventors: Fuyuki Sato, Yasuo Saito
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Publication number: 20130126478Abstract: The present invention provides an etching solution for silver or silver alloy comprising one at least ammonium compound represented by the formula (1), (2) or (3) below and an oxidant:Type: ApplicationFiled: January 15, 2013Publication date: May 23, 2013Applicant: INKTEC CO., LTD.Inventors: Kwang-Choon CHUNG, Hyun-Nam CHO, Young-Kwan SEO
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Patent number: 8440098Abstract: The invention relates to a composition which comprises 1 to 80% by weight of at least one acid which has a pKa of 2 or less; a protic solvent; a complexing agent for Ca2+ ions; for use as conditioning agent for etching enamel lesions.Type: GrantFiled: April 10, 2009Date of Patent: May 14, 2013Assignee: Ernst Muhlbauer GmbH & Co. KGInventors: Stephan Neffgen, Swen Neander, Dierk Lubbers
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Publication number: 20130115733Abstract: Provided is an etchant composition. The etchant composition according to an exemplary embodiment of the present invention includes ammonium persulfate ((NH4)2)S2O8, an azole-based compound, a water-soluble amine compound, a sulfonic acid-containing compound, a nitrate-containing compound, and water.Type: ApplicationFiled: July 12, 2012Publication date: May 9, 2013Applicants: DONGJIN SEMICHEM CO., LTD, SAMSUNG DISPLAY CO., LTD.Inventors: Bong-Kyun KIM, Hong Sick PARK, Wang Woo LEE, Young Woo PARK, Shin Il CHOI, Sang-Woo KIM, Ki-Beom LEE, Dae-Woo LEE, Sam-Young CHO, Jeong-Heon CHOI
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Publication number: 20130115727Abstract: An etching composition and a method of manufacturing a display substrate using the etching composition are disclosed. The etching composition includes phosphoric acid (H3PO4) of about 40% by weight to about 70% by weight, nitric acid (HNO3) of about 5% by weight to about 15% by weight, acetic acid (CH3COOH) of about 5% by weight to about 20% by weight, and a remainder of water. Thus, a metal layer including copper may be stably etched.Type: ApplicationFiled: June 27, 2012Publication date: May 9, 2013Applicants: DONGWOO FINE-CHEM CO., LTD., SAMSUNG DISPLAY CO., LTD.Inventors: Hong-Sick Park, Wang-Woo Lee, Bong-Kyun Kim, O-Byoung Kwon, Kyung-Bo Shim, Sang-Hoon Jang
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Publication number: 20130105729Abstract: The present invention relates to an etching solution for a multilayer thin film containing a copper layer and a molybdenum layer, and a method of etching a multilayer thin film containing a copper layer and a molybdenum layer using the etching solution. There are provided an etching solution for a multilayer thin film containing a copper layer and a molybdenum layer, including (A) an organic acid ion supply source containing two or more carboxyl groups and one or more hydroxyl groups in a molecule thereof, (B) a copper ion supply source and (C) an ammonia and/or ammonium ion supply source, the etching solution having a pH value of from 5 to 8, and an etching method using the etching solution.Type: ApplicationFiled: May 27, 2011Publication date: May 2, 2013Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventors: Satoshi Tamai, Satoshi Okabe, Masahide Matsubara, Kunio Yube
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Patent number: 8425276Abstract: The present invention provides a polishing composition for polishing copper or copper alloy, comprising: an oxidizing agent (A); at least one acids (B) selected from amino acids, carboxylic acids of 8 or less carbon atoms, or inorganic acids; a sulfonic acid (C) having an alkyl group of 8 or more carbon atoms; a fatty acid (D) having an alkyl group of 8 or more carbon atoms; and an N-substituted imidazole (E) represented by the following general formula (1). (In the formula (1), Ra, Rb, and Rc represent H or an alkyl group of 1 to 4 carbon atoms, and Rd represents a group selected from the group consisting of a benzyl group, a vinyl group, an alkyl group of 1 to 4 carbon atoms, and a group in which a portion of H of these groups has been substituted with OH or NH2.Type: GrantFiled: November 12, 2008Date of Patent: April 23, 2013Assignee: Showa Denko K.K.Inventors: Takashi Sato, Hiroshi Takahashi, Yoshitomo Shimazu, Yuji Itoh
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Publication number: 20130092872Abstract: Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.Type: ApplicationFiled: August 31, 2012Publication date: April 18, 2013Inventors: Young-Taek Hong, Jinuk Lee, Junghun Lim, Jaewan Park, Chanjin Jeong, Hoon Han, Seonghwan Park, Yanghwa Lee, Sang Won Bae, Daehong Eom, Byoungmoon Yoon, Jihoon Jeong, Kyunghyun Kim, Kyounghwan Kim, ChangSup Mun, Se-Ho Cha, Yongsun Ko
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Patent number: 8409467Abstract: A polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, which liquid includes: a quaternary ammonium cation; a corrosion inhibiting agent; a polymer compound having a sulfo group at a terminal; inorganic particles; and an organic acid, the pH of the polishing liquid being in the range of 1 to 7.Type: GrantFiled: September 12, 2008Date of Patent: April 2, 2013Assignee: FUJIFILM CorporationInventors: Toshiyuki Saie, Tetsuya Kamimura
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Publication number: 20130078756Abstract: An aqueous alkaline etching and cleaning composition for treating the surface of silicon substrates, the said composition comprising: (A) a quaternary ammonium hydroxide; and (B) a component selected from the group consisting of water-soluble acids and their water-soluble salts of the general formulas (I) to (V): (R1—S03-)nXn+ (I), R—P032?(Xn+)3-n (II); (RO—S03-)nXn+ (III), RO—P032?(Xn+)3-n, (IV), and [(RO)2P02-]nXn+ (V); wherein the n=1 or 2; X is hydrogen or alkaline or alkaline-earth metal; the variable R1 is an olefinically unsaturated aliphatic or cycloaliphatic moiety and R is R1 or an alkylaryl moiety; the use of the composition for treating silicon substrates, a method for treating the surface of silicon substrates, and methods for manufacturing devices generating electricity upon the exposure to electromagnetic radiation.Type: ApplicationFiled: June 1, 2011Publication date: March 28, 2013Applicant: BASF SEInventors: Berthold Ferstl, Simon Braun, Achim Fessenbecker
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Patent number: 8404146Abstract: A polishing liquid is provided which has good storage stability and is capable of inhibiting generation of scratching caused by aggregation of solid abrasive grains or the like during use. A polishing method using the polishing liquid is also provided. The polishing liquid includes: (a) an aqueous solution A including colloidal silica particles in an amount of from 5 mass % to 40 mass % with respect to the total mass of the aqueous solution A, and having a pH of from 1 to 7; and (b) an aqueous solution B including a quaternary ammonium cation, wherein the aqueous solution A and the aqueous solution B are separately prepared and mixed to provide the polishing liquid immediately before used in polishing.Type: GrantFiled: February 19, 2009Date of Patent: March 26, 2013Assignee: FUJIFILM CorporationInventor: Toshiyuki Saie
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Patent number: 8404143Abstract: The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.Type: GrantFiled: February 22, 2012Date of Patent: March 26, 2013Assignee: Fujifilm Planar Solutions, LLCInventors: Hyungjun Kim, Richard Wen, Bin Hu, Minae Tanaka, Deepak Mahulikar
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Patent number: 8404145Abstract: An indium cap layer is formed by blanket depositing indium onto a surface of metallic interconnects separated by interlayer dielectric, and then selectively chemically etching the indium located on the interlayer dielectric leaving an indium cap layer. Etchants containing a strong acid are provided for selectively removing the indium.Type: GrantFiled: June 21, 2010Date of Patent: March 26, 2013Assignee: International Business Machines CorporationInventors: Maurice McGlashan-Powell, Eugene J. O'Sullivan, Daniel C. Edelstein
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Publication number: 20130056438Abstract: Disclosed is a composition for and applying said method for micro etching of copper or copper alloys during manufacture of printed circuit boards. Said composition comprises a copper salt, a source of halide ions, a buffer system and a benzothiazole compound as an etch refiner. The inventive composition and method is especially useful for manufacture of printed circuit boards having structural features of ?100 ?m.Type: ApplicationFiled: May 26, 2010Publication date: March 7, 2013Applicant: ATOTECH DEUTSCHLAND GMBHInventors: Dirk Tews, Christian Sparing, Martin Thoms
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Patent number: 8366958Abstract: The present invention provides an etching solution for silver or silver alloy including at one at least ammonium compound represented by the formula (1), (2) or (3) below and an oxidant: wherein each of the variables is as defined herein.Type: GrantFiled: April 5, 2006Date of Patent: February 5, 2013Assignee: Inktec Co., Ltd.Inventors: Kwang-Choon Chung, Hyun-Nam Cho, Young-Kwan Seo
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Patent number: 8366959Abstract: A colloidal dispersion for chemical mechanical polishing comprising: (a) an abrasive component; and (b) from about 0.05% to about 10% by weight of the abrasive component, a water-soluble amphoteric polymer comprising at least one macromolecular chain B and a part A bonded to a single end of the at least one macromolecular chain B, wherein the macromolecular chain B is derived from one or more ethylenically unsaturated monomers having quaternary ammonium groups or inium groups, and wherein the part A is a polymeric or nonpolymeric group comprising at least one anionic group; wherein the dispersion has a pH of between about 1.5 and about 6. The colloidal dispersion is capable of polishing a substrate comprising silicon nitride and silicon oxide with a reverse selectivity ratio of at least about 27, typically at least 50 the reverse selectivity ratio being the ratio of the rate of removal of the silicon nitride to the rate of removal of the silicon oxide.Type: GrantFiled: September 25, 2009Date of Patent: February 5, 2013Assignees: Rhodia Operations, Clarkson UniversityInventors: Suryadevara V. Babu, Pradeepa Dandu, Vamsi K Devarapalli, Guillaume Crinière, Claire Pitois
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Publication number: 20130029489Abstract: The present invention relates to a polishing slurry for performing chemical mechanical polishing on a surface to be polished including a surface made of silicon oxide and a surface made of metal, characterized in that it includes cerium oxide particles, a complexing agent, and water.Type: ApplicationFiled: October 1, 2012Publication date: January 31, 2013Applicant: ASAHI GLASS COMPANY, LIMITEDInventor: ASAHI GLASS COMPANY, LIMITED
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Publication number: 20130015471Abstract: An etchant includes about 50% by weight to about 70% by weight of phosphoric acid, about 1% by weight to about 5% by weight of nitric acid, about 10% by weight to about 20% by weight of acetic acid, about 0.1% by weight to about 2% by weight of a corrosion inhibition agent including an azole-based compound and a remainder of water.Type: ApplicationFiled: April 3, 2012Publication date: January 17, 2013Inventors: Hong-Sick PARK, Wang-Woo Lee
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Patent number: 8349207Abstract: A chemical mechanical polishing aqueous dispersion includes (A) colloidal silica having an average particle size calculated from the specific surface area determined by the BET method of 10 to 60 nm, (B) an organic acid having two or more carboxyl groups and one or more hydroxyl groups in one molecule, and (C) a quaternary ammonium compound shown by the following general formula (1), wherein R1 to R4 individually represent hydrocarbon groups, and M? represents an anion, the chemical mechanical polishing aqueous dispersion having a pH of 3 to 5.Type: GrantFiled: February 20, 2008Date of Patent: January 8, 2013Assignee: JSR CorporationInventors: Taichi Matsumoto, Tomikazu Ueno, Michiaki Andou
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Patent number: 8337715Abstract: A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.Type: GrantFiled: November 12, 2010Date of Patent: December 25, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Gaku Minamihaba, Dai Fukushima, Nobuyuki Kurashima, Susumu Yamamoto, Hiroyuki Yano
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Patent number: 8338303Abstract: A polishing liquid for a chemical mechanical polishing of a semiconductor device includes (a) a carboxylic acid compound having one or more carboxy groups, (b) colloidal silica particles having a ? potential of ?10 mV to ?35 mV when used in the polishing liquid, (c) a benzotriazole derivative, (d) an anionic surfactant, and (e) an oxidizing agent, and the polishing liquid has a pH of from 5.0 to 8.0.Type: GrantFiled: December 16, 2009Date of Patent: December 25, 2012Assignee: FUJIFILM CorporationInventor: Tetsuya Kamimura
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ETCHING SOLUTION FOR MULTILAYER THIN FILM HAVING COPPER LAYER AND MOLYBDENUM LAYER CONTAINED THEREIN
Publication number: 20120319033Abstract: Discloses are an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein; and an etching method of a multilayer thin film having a copper layer and a molybdenum layer contained therein using the same. Specifically disclosed are an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein, which includes (A) hydrogen peroxide, (B) a fluorine atom-free inorganic acid, (C) an organic acid, (D) an amine compound having a carbon number of from 2 to 10 and having an amino group and a hydroxyl group in a total group number of 2 or more, (E) an azole, and (F) a hydrogen peroxide stabilizer, and which has a pH of from 2.5 to 5; and an etching method using the same.Type: ApplicationFiled: February 15, 2011Publication date: December 20, 2012Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventors: Satoshi Okabe, Kazuyo Narita, Masahide Matsubara, Tomoyuki Adaniya, Taketo Maruyama -
Patent number: 8328892Abstract: A solution for forming a polishing slurry, the polishing slurry and related methods are disclosed. The solution for forming a polishing slurry may include 1 H-benzotriazole (BTA) dissolved in an ionic surfactant such as a sodium alkyl sulfate solution, and perhaps a polyacrylic acid (PAA) solution. The solution can be filtered and used in a polishing slurry. This approach to solubilizing BTA results in a high BTA concentration in a polishing slurry without addition of foreign components to the slurry or increased safety hazard. In addition, the solution is easier to ship because it is very stable (e.g., can be frozen and thawed) and has less volume compared to conventional approaches. Further, the polishing slurry performance is vastly improved due to the removal of particles that can cause scratching.Type: GrantFiled: October 31, 2007Date of Patent: December 11, 2012Assignee: International Business Machines CorporationInventors: Joseph K. V. Comeau, Marina M. Katsnelson, Matthew T. Tiersch, Eric J. White
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Publication number: 20120299158Abstract: The CMP polishing liquid of the invention is used by mixing a first solution and a second solution, the first solution comprises cerium-based abrasive grains, a dispersant and water, the second solution comprises a polyacrylic acid compound, a surfactant, a pH regulator, a phosphoric acid compound and water, the pH of the second solution is 6.5 or higher, and the first solution and second solution are mixed so that the phosphoric acid compound content is within a prescribed range. The CMP polishing liquid of the invention comprises cerium-based abrasive grains, a dispersant, a polyacrylic acid compound, a surfactant, a pH regulator, a phosphoric acid compound and water, with the phosphoric acid compound content being within a prescribed range.Type: ApplicationFiled: December 10, 2010Publication date: November 29, 2012Applicant: HITACHI CHEMICAL COMPANY, LTD.Inventors: Takashi Shinoda, Kazuhiro Enomoto, Toshiaki Akutsu
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Publication number: 20120295399Abstract: Provided is a zinc (Zn) oxide-based thin film transistor that may include a gate, a gate insulating layer on the gate, a channel including zinc oxide and may be on a portion of the gate insulating layer, and a source and drain contacting respective sides of the channel. The zinc (Zn) oxide-based thin film transistor may further include a recession in the channel between the source and the drain, and a zinc oxide-based etchant may be used to form the recession.Type: ApplicationFiled: July 27, 2012Publication date: November 22, 2012Inventors: Chang-jung KIM, Young-soo Park, Eun-ha Lee, Jae-chul Park
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Patent number: 8314030Abstract: A method for fabricating a semiconductor device through a chemical mechanical polishing (CMP) process is provided. The CMP process is performed by using a slurry. The semiconductor device fabrication method can ensure the reliability and economical efficiency of the device by performing a CMP process using a CMP slurry having a high polishing selectivity with respect to a target surface, an anti-scratch characteristic, and a high global planarization characteristic.Type: GrantFiled: June 23, 2009Date of Patent: November 20, 2012Assignee: Hynix Semiconductor, Inc.Inventors: Jum-Yong Park, Noh-Jung Kwak, Yong-Soo Choi, Cheol-Hwi Ryu
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Patent number: 8314028Abstract: In a slurry composition and a method of polishing a layer using the slurry composition, the slurry composition includes from about 3 to 20 percent by weight of an abrasive, from about 0.1 to 3 percent by weight of an ionic surfactant, from about 0.01 to 0.1 percent by weight of a nonionic surfactant, from about 0.01 to 1 percent by weight of a polish accelerating agent including an amino acid compound, and a remainder of an aqueous solution including a basic pH-controlling agent and water. The slurry composition including the nonionic surfactant and the polish accelerating agent may be used for speedily polishing a stepped upper portion of a silicon oxide layer, and may also enable a lower portion of the silicon oxide layer to function as a polish stop layer.Type: GrantFiled: September 11, 2007Date of Patent: November 20, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Gi-Sik Hong, Dong-Jun Lee, Nam-Soo Kim, Kyoung-Moon Kang
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Publication number: 20120289056Abstract: Methods and etchant solutions for etching silicon nitride on a workpiece are provided. One method generally includes exposing the workpiece to a chemistry mixture including phosphoric acid and a diluent, wherein the chemistry mixture has a water content of less than 10% by volume, and heating at least one of the workpiece and the chemistry mixture to a process temperature to etch silicon nitride from the workpiece.Type: ApplicationFiled: April 20, 2012Publication date: November 15, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Eric J. Bergman, Jerry Dustin Leonhard
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Publication number: 20120270399Abstract: The present invention relates to a CMP slurry composition comprising an abrasive particle; a dispersant; an ionic polymer additive; and a non-ionic polymer additive including a polyolefin-polyethylene glycol copolymer including at least two polyethylene glycol repeat unit as a backbone and at least a polyethylene glycol repeating unit as a side chain, and a polishing method with using the slurry composition. The CMP slurry composition shows a low polishing rate to a single-crystalline silicon layer or a polysilicon layer and a high polishing rate to a silicon oxide layer, resulting in having an excellent polishing selectivity.Type: ApplicationFiled: October 13, 2010Publication date: October 25, 2012Applicant: LG CHEM, LTD.Inventors: Dong-Mok Shin, Eun-Mi Choi, Seung-Beom Cho
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Patent number: 8293123Abstract: A method of manufacturing an inkjet printhead, in which a solvent included in a positive photoresist composition or in a non-photosensitive soluble polymer composition which is used to form a sacrificial layer has a different polarity from that of a solvent included in a negative photoresist composition that is used to form at least one of a channel forming layer and a nozzle layer.Type: GrantFiled: June 24, 2008Date of Patent: October 23, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-jin Park, Su-min Kim, Jin-baek Kim, Yong-ung Ha, Yong-seop Yoon, Byung-ha Park
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Patent number: 8277681Abstract: A metal polishing slurry which is capable of simultaneously realizing a high polishing speed and reduced dishing in the polishing of a subject to be polished is provided.Type: GrantFiled: February 27, 2009Date of Patent: October 2, 2012Assignee: FUJIFILM CorporationInventors: Hiroshi Inada, Masaru Yoshikawa, Tadashi Inaba
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Publication number: 20120238094Abstract: The CMP polishing liquid of the invention comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains. The polishing method of the invention comprises a step of polishing at least a palladium layer with an abrasive cloth while supplying a CMP polishing liquid between the palladium layer of a substrate having the palladium layer and the abrasive cloth, wherein the CMP polishing liquid comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains.Type: ApplicationFiled: January 4, 2011Publication date: September 20, 2012Applicant: Hitachi Chemical Company, Ltd.Inventors: Hisataka Minami, Jin Amanokura, Sou Anzai