Abstract: An embodiment discloses a semiconductor device package, comprising: a body including a cavity; a plurality of electrodes disposed inside the body; a semiconductor device disposed in the cavity of the body; and a transparent member disposed on the cavity, wherein the body comprises: a first side surface and a second side surface facing each other, and a third side surface and a fourth side surface facing each other; a first corner area formed by the first side surface and the third side surface; a second corner area formed by the first side surface and the fourth side surface; a third corner area formed by the second side surface and the fourth side surface; and a fourth corner area formed by the second side surface and the third side surface, and wherein the plurality of electrodes comprises a first electrode on which the semiconductor device is disposed, wherein the first electrode comprises: a fifth side surface and a sixth side surface facing each other; a seventh side surface connecting the fifth side sur

Abstract: An optoelectronic device includes an emitter of light rays and a receiver of light rays. The emitter is encapsulated within a first encapsulation layer, and the receiver is encapsulated within a second encapsulation layer. An opaque layer covers the first encapsulation layer (encapsulating the receiver) and covers the second encapsulation layer (encapsulating the emitter). The first and second encapsulation layers are separated by a region of opaque material. This opaque material may be provided by the opaque layer or an opaque fill.

Abstract: A hermetic housing is disclosed (10a) for an optoelectronic component (11) or a MEMS device configured to form an enclosure (12) within which a low pressure or vacuum prevails. The hermetic housing includes: an optical window (14) transparent for at least one wavelength of interest (?); and a layer of a getter material (15a) configured to capture gases present in said enclosure and deposited on the optical window opposite the enclosure. This layer of getter material has a thickness (e_t), greater than 60 nanometers, and a porosity (P) in the range from 10 to 70% to satisfy the following relation: (1?P)*e_t<?/2?k with ? corresponding to the at least one wavelength of interest, and k corresponding to the extinction coefficient of the material of the layer of getter material for the at least one wavelength of interest of the optical window.

Abstract: Provided is a composition for encapsulating an organic electronic element and an organic electronic device comprising the same, and an encapsulating composition that can form a structure capable of effectively blocking moisture or oxygen introduced from the outside into an organic electronic device, thereby securing a lifetime of the organic electronic device, and that can be applied to a top-emitting organic electronic device to prevent physical and chemical damage of organic electronic elements, while having excellent optical properties and processability, and an organic electronic device comprising the same.

Abstract: The present application relates to an organic electronic device, and provides the organic electronic device including an encapsulating structure capable of effectively blocking water or oxygen introduced from the outside into the organic electronic device, thereby securing the lifetime of the organic electronic device and implementing endurance reliability of the encapsulating structure at high temperature and high humidity, and having high shape retention characteristics.

Abstract: A polyamide acid of the present invention contains, as a diamine component, 2,2-bistrifluoromethylbenzidine and trans-1,4-cyclohexanediamine, and contains, as a tetracarboxylic acid dianhydride component, a pyromellitic acid anhydride and a 3,3,4,4-biphenyltetracarboxylic acid dianhydride. A ratio of the trans-1,4-cyclohexanediamine to a total amount of the diamine is preferably 0.5-40 mol %. A polyimide is obtained by dehydration ring closure of the polyamide acid.

Abstract: In some embodiments, the present disclosure relates to an ion beam etching apparatus. The ion beam etching apparatus includes a substrate holder disposed within a processing chamber and a plasma source in communication with the processing chamber. A vacuum pump is coupled to the processing chamber by way of an inlet. One or more baffles are arranged between the substrate holder and a lower surface of the processing chamber. A by-product redistributor is configured to move a by-product from an etching process from outside of the one or more baffles to directly below the one or more baffles.

Abstract: Provided is a display apparatus including a display panel, a covering member, and an intermediate member. The intermediate member includes a base material including an insulating material and a heat transfer particle, and is disposed between the display panel and the covering member The display panel includes: a substrate; an encapsulation member which faces the substrate; and a display device which is arranged between the substrate and the encapsulation member and displays an image, the covering member is arranged to face the display panel, and the intermediate member is disposed in a gap between the covering member and an area of the substrate where the encapsulation member is not disposed.

Abstract: An LED package creates a narrow beam in a very compact package without use of a lens. A plastic is molded around a metal lead frame (12, 14) to form a molded cup (26), where the cup has parabolic walls extending from a bottom area of the cup to a top thereof. The lead frame forms a first set of electrodes exposed at the bottom area of the cup for electrically contacting a set of LED die electrodes (18, 20). The lead frame also forms a second set of electrodes outside of the cup for connection to a power supply. A reflective metal (28) is then deposited on the curved walls of the cup. An LED die (16) is mounted at the bottom area of the cup and electrically connected to the first set of electrodes. The cup is then partially filled with an encapsulant (64) containing a phosphor (66).

Abstract: Provided is a method of manufacturing a light emitting module, the method including: providing a light guiding plate having a first main surface serving as a lighting surface, and a second main surface opposite to the first main surface, the second main surface defining a recess thereon, preparing a light emitting element unit by attaching a wavelength conversion portion to a light emitting element having electrodes and a light emitting surface; providing a light diffusion portion at a bottom of the recess; depositing the light emitting element unit onto the light diffusion portion in the recess; and forming a terminal having an electrical conductivity on the electrodes of the light emitting element.

Abstract: Methods and apparatus are provided for LED packages with surface textures. In one novel aspect, microstructures are formed on surfaces of the LED package such that light extract efficiency is improved. In one embodiment, the LED package has a silicone-encapsulating layer scattered with phosphors. In another embodiment, the LED package has a leadframe substrate. The microstructure can be micro lens, micro dents, micro pillars, micro cones, or other shapes. The microstructures can be periodically arranged or randomly arranged. In one novel aspect, the compression molding process is used to form rough surfaces. The molding block or the release film is modified with microstructures. In another novel aspect, sandblasting process is used. In one embodiment, microstructures are formed on sidewalls using the sandblasting process. The hardness, the angle, and/or the size of the blasting media are selected to improve the efficiency of the LED package.

Abstract: A method for processing an ultra-high density interconnect wire under light source guidance, comprising preparing a photo-thermal response conductive paste, and putting it into an air pressure injector; driving the air pressure injector; the air pressure injector extrudes the photo-thermal response conductive paste, so that the photo-thermal response conductive paste is connected with the first chip to form an interconnection wire; stopping extruding the photo-thermal response conductive paste, and driving the air pressure injector to pull off the interconnection wire; a linear light source emits light and irradiates on the interconnection wire to bend to an upper side of a second chip bonding pad; an extrusion mechanism presses a free end of the interconnection wire on the second chip bonding pad; the first chip and the second chip are subjected to glue dripping encapsulation.

Abstract: A display panel and an electronic device are provided. The display panel includes a plurality of thin film transistors, the thin film transistor includes: a first metal layer, a second metal layer, an active region, a gate dielectric layer, a gate metal layer, an interlayer dielectric layer, a source metal layer, and a drain metal layer. The active region includes a channel region, a source region, and a drain region. The source metal layer is electrically connected to the source region and the first metal layer through a via hole. The drain metal layer is electrically connected to the drain region and the second metal layer through a via hole.

Abstract: A self-emissive element includes a light-emitting diode (LED) and an auxiliary structure. The LED includes a first type semiconductor, a second type semiconductor, a first pad, and a second pad. The second type semiconductor is overlapped with the first type semiconductor in a vertical direction perpendicular. The auxiliary structure includes a cover portion, a protection portion and a first anchor portion. The cover portion is overlapped with the LED in the vertical direction. The protection portion is not overlapped with the LED in the vertical direction. An orthographic projection area of the protection portion in the vertical direction is greater than or equal to an orthographic projection area of the LED in the vertical direction. The first anchor portion and the protection portion are respectively located at different sides of the LED.

Abstract: According to a method for producing a flexible OLED device of the present disclosure, a multilayer stack (100) is provided, the multilayer stack including a base (10), a functional layer region (20) which includes a TFT layer and an OLED layer, a flexible film (30) provided between the base and the functional layer region and supporting the functional layer region, and a release layer (12) provided between the flexible film and the base and bound to the base. The release layer is irradiated with lift-off light (216) transmitted through the base, whereby the flexible film is delaminated from the release layer. The release layer is made of an alloy of aluminum and silicon.

Abstract: A light emitting apparatus includes a plurality of full-color LED units. Constant current values of the constant current elements are set such that the plurality of full-color LED units come closer to a same chromaticity as compared with a case in which all the constant current elements of all the full-color LED units have a same constant current value. As a result, in at least one of the plurality of full-color LED units, at least one of the plurality of constant current elements is set to a constant current value different from that of the other constant current elements.

Abstract: A display area drilling and packaging structure includes a back plate assembly, an emitting layer having a drilling area, and a hot melted adhesive layer. The emitting layer is disposed on the back plate assembly, and an annular cutting groove surrounding the drilling is disposed on the emitting layer. The hot melted adhesive layer at least covers an edge of a mouth of the annular cutting groove away from a center. A packaging layer is disposed on the back plate assembly, the hot melted adhesive layer, and the emitting layer.

Abstract: A light-emitting diode includes a transparent substrate with a first surface, a second surface opposite to the first surface, and a side surface connected to the first surface and the second surface; a first light-emitting structure; a second light-emitting structure; a connecting layer, connected to the first light-emitting structure and the second light-emitting structure; a circuit arranged between the transparent substrate and the first light-emitting structure, and having a portion formed on the first surface without extending to the second surface; and a structure with diffusers, covering the first light-emitting structure and the second light-emitting structure on the first surface without crossing over the side surface.

Abstract: The present disclosure relates to the field of display technologies, and provides an OLED light emitting module, a manufacturing method thereof, and a display device. The OLED light emitting module includes a base substrate, an OLED light emitting device on the base substrate, and a metal stack on the OLED light emitting device. The metal stack includes a first metal layer, a second metal layer and a third metal layer arranged in stack. The second metal layer includes an invar alloy. The first metal layer and the third metal layer include a metal material different from the invar alloy.

Abstract: A metal aprotic organosilanoxide compound of formula (I): {R1—Si(R2)(R3)—[O—Si(R4)(R5)]m—O}n-M1(?L)o(X1)p (I), wherein M1 is a metal atom Al, Ce, Fe, or V, a composition or formulation containing or prepared from it, and methods of making and using them. Each molecule of the metal aprotic organosilanoxide compound is composed of at least one metal atom and at least one aprotic organosilanoxide ligand. The metal aprotic organosilanoxide compound may be used as such or as a constituent in a variety of silicone formulations for adhesives, coatings, elastomers, encapsulants, pottants, and sealants.

Abstract: A method of fabricating a multi-color display includes dispensing a photo-curable fluid that includes a color conversion agent over a display having a backplane and an array of light emitting diodes electrically integrated with backplane circuitry of the backplane, activating a plurality of light emitting diodes in the array of light emitting diodes to illuminate and cure the first photo-curable fluid to form a color conversion layer over each of the first plurality of light emitting diodes to convert light from the plurality of light emitting diodes to light of a first color, and removing an uncured remainder of the first photo-curable fluid. This process is repeated with a fluid having different color conversion components for another color.

Abstract: A display panel and a fabrication method for forming the display panel are provided. The fabrication method includes providing a substrate disposed with a light-emitting device, and forming a first inorganic material layer. The fabrication method also includes forming a first inorganic layer by thinning the first inorganic material layer, and forming a second inorganic layer. Moreover, the fabrication method includes forming a third layer. The third layer is disposed in a first region. Further, the fabrication method includes patterning the first inorganic layer and the second inorganic layer by a dry etching using the third layer as a mask, while simultaneously thinning the third layer. The first inorganic layer and the second inorganic layer in the first region are retained to form a first inorganic encapsulation layer and a second inorganic encapsulation layer, respectively. The third layer is thinned to form a third encapsulation layer.

Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer containing an n-type impurity and located on the substrate, and a p-side nitride semiconductor layer containing a p-type impurity and located on the n-side nitride semiconductor layer, wherein a resistance of a peripheral portion of the p-side nitride semiconductor layer is higher than a resistance of an area inside of the peripheral portion in a top view, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; and first protective layer located on an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer.

Abstract: A composite material includes at least one photoluminescent material embedded as a light source in a transparent matrix, wherein a refractive index (nP) of the at least one photoluminescent material and a refractive index (nM) of the matrix differ by at most ±0.2.

Abstract: Disclosed is a semiconductor light emitting device including: a body with a bottom part having at least one hole formed therein; a semiconductor light emitting device chip to be placed in each of the at least one hole, with the semiconductor light emitting device chip being comprised of a plurality of semiconductor layers including an active layer for generating light by electron-hole recombination, and an electrode electrically connected to the plurality of semiconductor layers; and an encapsulating member for covering the semiconductor light emitting device chip, wherein a hole—defining inner face of the bottom part has a plurality of angles of inclination.

Abstract: An optoelectronic device includes a substrate and a first optoelectronic chip flush with a surface of the substrate. The device includes a cover that covers the substrate and the first optoelectronic chip. The cover comprises a cavity above a first optical transduction region of the first optoelectronic chip. The device also includes a second optoelectronic chip having a second optical transduction region spaced apart from the first optical transduction region and the cavity continues above the second optical transduction region.

Abstract: A light emitting device includes a light emitting element that emits light, and a wiring substrate that includes a light reflective reflecting electrode to which the light emitting element is bonded using a bonding material. The reflecting electrode has a reflecting region which reflects light emitted from the light emitting element. An area of a mounting region surrounded by an outer circumference of the reflecting region is greater than an area of the light emitting element by four times or more seen in a direction perpendicular to the wiring substrate.

Abstract: The device comprises a bipolar transistor with emitter, base, collector, base-collector junction and base-emitter junction, a collector-to-base breakdown voltage, a quenching component electrically connected with the base or the collector, and a switching circuitry configured to apply a forward bias to the base-emitter junction. The bipolar transistor is configured for operation at a reverse collector-to-base voltage above the breakdown voltage.

Abstract: In a described example, a packaged semiconductor device includes: a semiconductor die with a component proximate to a surface of the semiconductor die; the semiconductor die mounted on a substrate. The component is covered with a first polymer layer with a first modulus and at least a portion of the first polymer layer is covered by at least one second polymer layer with a second modulus and the second modulus is greater than the first modulus. The semiconductor die and a portion of the substrate are covered with mold compound.

Abstract: A silicone-coated filler comprises: a particulate material mainly composed of an inorganic oxide formed by oxidizing a predetermined element; a first silicone structure bonded to a surface of the particulate material by way of a “-‘the predetermined element’-OSi—” structure; and a second silicone structure including a cross-linking structure with a carbon-carbon structure directly bonded to a silicon atom of the first silicone structure, and a polysiloxane structure bonded to the cross-linking structure.

Abstract: Methods, apparatus, and assemblies are provided for a substrate carrier adapter insert including an adapter frame including a support rail adapted to support one or more substrates in a substrate carrier, a frame extension coupled to, or integral with, the adapter frame, and a mapping feature formed on the frame extension and disposed to be detected by a sensor for determining whether an adapter insert is present or absent in a substrate carrier. Numerous additional features are disclosed.

Abstract: A light emitting device includes an LED chip, a light-transmissible member and a light-reflecting member. The LED chip has a plurality of interconnecting side surfaces having a roughened structure and a plurality of corners. The light-transmissible member covers the side surfaces and the corners and includes a light-transmissible material layer having a breadth value W(A) of a viscosity coefficient (A) range of the light-transmissible material, which satisfies a relation of W(A)?B*D/C: where B represents a thickness of the light-transmissible material layer, represents a thickness of the LED chip measured from the first surface to the second surface, and D represents a roughness of the roughened structure. A method for manufacturing the light emitting device is also provided.

Abstract: An electronic display includes emission clock routing without the use of repeaters. This may be accomplished by providing row drivers for each emission clock signal on opposing edges of the display panel, so that each set of row drivers may provide the emission clock signal to only a portion of the micro-drivers in each row. The array of micro-drivers may be further segmented (e.g., into four or more sections, an alternating pattern, uneven sections, etc.) to provide similar advantages. Furthermore, rather than using multiplexors to provide the emission clock signals to the row drivers, the emission clock may be hardwired to the row drivers. This may reduce the number of pins and support the provision of more phases.

Abstract: A device and a connection carrier are disclosed. In an embodiment a device includes a connection carrier, a frame and an encapsulation body, wherein the connection carrier, the encapsulation body and/or the frame have different thermal expansion coefficients, a semiconductor chip mechanically and electronically connected to the connection carrier and a metal layer arranged between the connection carrier and the frame, wherein the encapsulation body surrounds the semiconductor chip and is adjacent to the connection carrier and the frame, wherein the metal layer is not in electrically conductive connection, and wherein the metal layer projects beyond the frame in a lateral direction.

Abstract: A display device includes a substrate, a pad electrode, a pixel electrode, an opposite electrode, an encapsulation member, a planarization layer, and a conductive layer. The substrate includes a display region and a peripheral region. The pad electrode is disposed on the substrate in the peripheral region. The pixel electrode and the opposite electrode are disposed on the substrate in the display region. The encapsulation member is disposed on the opposite electrode. The planarization layer is disposed on the encapsulation member in the display region and the peripheral region. The conductive layer is disposed on the planarization layer. The planarization layer includes a contact hole exposing at least a portion of the pad electrode. The conductive layer contacts the portion of the pad electrode exposed through the contact hole.

Abstract: A flexible display apparatus, including a flexible substrate including a bending area and a non-bending area; a display unit on the flexible substrate; and an encapsulation unit covering the display unit, the encapsulation unit including a first inorganic film, a second inorganic film, and an organic film between the first inorganic film and the second inorganic film, the organic film having a first thickness in the bending area and a second thickness greater than the first thickness in the non-bending area.

Abstract: A light emitting assembly comprising a solid state device, when and if coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device a first wavelength radiation, and an enveloping vessel enhancing the luminescence of the solid-state device and providing a mechanism for arranging luminophoric medium in receiving relationship to said first, radiation, and which in exposure to said first radiation, is excited to responsively emit second wavelength radiation or to otherwise transfer its energy without radiation to a third radiative component. In a specific embodiment, monochromatic blue or UV light output from a light-emitting diode is converted to achromatic light without hue by packaging the diode with fluorescent organic and/or inorganic fluorescers and phosphors on the walls of the solid-state light envelope which keeps the diode and the fluorescers and phosphors under a vacuum or a rare or Noble gas.

Abstract: A display (100) comprising a plurality of LED chips (604), each LED chip (604) comprising a plurality of light emitting elements (606a-c). Each LED chip (604) is arranged such that a first light emitting element (606a) is configured to illuminate a sub-pixel, and a second light emitting element (606b) is configured to illuminate a sub-pixel using substantially the same wavelength of light as the first light emitting element. There is also described an LED chip, a display pixel, a controlling method, a computer device and a computer program for a display.

Abstract: A light emitting assembly comprising at least one of each of a solid state device and a thermal radiation source, couplable with a power supply constructed and arranged to power the solid state device and the thermal radiation source, to emit from the solid state device a first, relatively shorter wavelength radiation, and to emit from the thermal radiation source non-visible infrared radiation, and a down-converting luminophoric medium arranged in receiving relationship to said first, relatively shorter wavelength radiation, and the infrared radiation, and which in exposure to said first, relatively shorter wavelength radiation, and infrared radiation, is excited to responsively emit second, relatively longer wavelength radiation.

Abstract: A component module includes a component holder having a curved upper side, and a radiation-emitting component arranged in a curved shape on the upper side, wherein the component holder includes a heat-distributing region on the upper side, a neutral fiber running inside the component, an adhesive is planar and arranged between the radiation-emitting component and the upper side, and the adhesive fixes the radiation-emitting component on the upper side.

Abstract: The present disclosure discloses a display panel, a method for packaging the display panel, and a display device. A display panel comprising: a cover plate comprising a main body portion and a sidewall disposed at a periphery of the main body portion and surrounding the main body portion; a sealing film disposed opposite the cover plate and sealingly engaged with the sidewall of the cover plate to define a sealed package space; and an organic light emitting unit sealed within the package space.

Abstract: Wavelength conversion of primary light by means of a conversion body, a conversion device and an illumination apparatus is described herein. In some aspects, a conversion body may include a main body containing a wavelength-converting phosphor. The main body may have an irradiation surface to be irradiated by primary light. The conversion body may further include at least one conduction tract mounted on the main body outside the irradiation surface. The at least one conduction track may be electrically conductive in accordance with some aspects.

Abstract: An OLED display substrate, a method for manufacturing the same, and a display device are provided. The OLED display substrate includes multiple sub-pixels, and at least one sub-pixel includes: an anode, a cathode, and a light-emitting layer between the anode and the cathode. The anode includes: a light-reflective layer and a first transparent conductive layer covering the light-reflective layer, and the first transparent conductive layer is located between the light-reflective layer and the light-emitting layer. First vertical distances between first surfaces of the first transparent conductive layers of the subpixels of different colors facing the respective cathodes and the respective cathodes are the same, and second vertical distances between the first surfaces of the first transparent conductive layers of the subpixels of different colors and second surfaces of the respective light-reflective layers facing the respective cathodes are different.

Abstract: Methods for manufacturing a display device are provided. A representative method includes: providing a substrate having a plurality of sub-pixel locations; providing a carrier substrate supporting a plurality of light emitting diodes (LEDs); conducting a testing to at least one of the plurality of LEDs on the carrier substrate; transferring at least a portion of the plurality of LEDs from the carrier substrate to the substrate; fixing the portion of the plurality of LEDs to the substrate; providing an insulator over the substrate; and providing a first electrode electrically connected to at least one of the portion of the plurality of LEDs.

Abstract: An organic light-emitting diode includes a first electrode and a second electrode that face each other, an organic emission layer between the first electrode and the second electrode, and an inorganic hole injection layer between the first electrode and the organic emission layer. The inorganic hole injection layer includes oxide of a form A-B-O, including an element A and an element B. The element A is one of molybdenum (Mo) and tungsten (W). The element B is one of vanadium (V), niobium (Nb), and tantalum (Ta). An atom content (x) of the element B is greater than 0 and no more than 15 at % (0<x?15 at %) based on a total atom content of the inorganic hole injection layer.

Abstract: A semiconductor device includes a metal substrate including a through-hole aperture having a multi-size cavity including a larger area first cavity portion above a smaller area second cavity portion that defines a first ring around the second cavity portion, where the first cavity portion is sized with area dimensions to receive a semiconductor die having a top side with circuitry coupled to bond pads thereon and a back side with a metal (BSM) layer thereon. The semiconductor die is mounted top side up with the BSM layer on the first ring. A metal die attach layer directly contacts the BSM layer, sidewalls of the bottom cavity portion, and a bottom side of the metal substrate.

Abstract: A wavelength conversion element includes a fluorescent portion in which fluorescent particles are dispersed in a binder. The fluorescent portion has a first surface and a second surface which are opposite to each other in a thickness direction and excitation light is irradiated from a second surface side. A volume density of the fluorescent particles in a first portion is higher than that in a second portion where the fluorescent portion is divided in the thickness direction into two of the first portion on a first surface side and the second portion on the second surface side. A thickness of the fluorescent portion is at least 5 times as long as an average particle size of the fluorescent particles.

Abstract: A light-emitting device includes a light-emitting element having a first upper surface serving as a light-extracting surface. A first light-transmissive member includes an inorganic material and a wavelength conversion member and has a plate shape including a first lower surface bonded to the first upper surface and a second upper surface. An outer periphery of the first lower surface is outside of an outer periphery of the first upper surface. The second upper surface is opposite to the first lower surface in a height direction along a height of the light-emitting device. The second light-transmissive member includes an inorganic material and includes a second lower surface bonded to the second upper surface and a third upper surface opposite to the second lower surface in the height direction. An outer periphery of the third upper surface is within an outer periphery of the second upper surface.

Abstract: A method of manufacturing a display device includes the following steps. A bonding pad is formed on a dielectric layer. A light-shielding material is formed on the dielectric layer. A temperature of the light-shielding material is increased such that the light-shielding material is cured into a light-shielding layer. During curing the light-shielding material into the light-shielding layer, the light-shielding material flows to and contacts a portion of a surface of the bonding pad. A light-emitting element is electrically connected to the bonding pad.