Incoherent Light Emitter Structure Patents (Class 257/79)
  • Patent number: 10385263
    Abstract: The present invention relates to heteroleptic carbene complexes comprising at least two different carbene ligands, to a process for preparing the heteroleptic carbene complexes, to the use of the heteroleptic carbene complexes in organic light-emitting diodes, to organic light-emitting diodes comprising at least one inventive heteroleptic carbene complex, to a light-emitting layer comprising at least one inventive heteroleptic carbene complex, to organic light-emitting diodes comprising at least one inventive light-emitting layer, and to devices which comprise at least one inventive organic light-emitting diode.
    Type: Grant
    Filed: April 3, 2007
    Date of Patent: August 20, 2019
    Assignee: UDC IRELAND LIMITED
    Inventors: Evelyn Fuchs, Martina Egen, Klaus Kahle, Christian Lennartz, Oliver Molt, Simon Nord, Wolfgang Kowalsky, Christian Schildknecht, Hans-Hermann Johannes
  • Patent number: 10388815
    Abstract: A photovoltaic device and method include a crystalline substrate and an emitter contact portion formed in contact with the substrate. A back-surface-field junction includes a homogeneous junction layer formed in contact with the crystalline substrate and having a same conductivity type and a higher active doping density than that of the substrate. The homogeneous junction layer includes a thickness less than a diffusion length of minority carriers in the homogeneous junction layer. A passivation layer is formed in contact with the homogeneous junction layer opposite the substrate, which is either undoped or has the same conductivity type as that of the substrate.
    Type: Grant
    Filed: April 30, 2018
    Date of Patent: August 20, 2019
    Assignee: International Business Machines Corporation
    Inventors: Tze-Chiang Chen, Bahman Hekmatshoartabari, Devendra K. Sadana, Davood Shahrjerdi
  • Patent number: 10388705
    Abstract: A display panel includes a substrate with a plurality of color sub pixel regions and a white sub pixel region constituting a unit pixel; a color filter layer with a color filter provided in each of the plurality of color sub pixel regions; and a reflection reduction layer provided in the white sub pixel region. The reflection reduction layer includes at least one color filter selected from the color filter layer, and a thickness of the reflection reduction layer is smaller than a thickness of the selected color filter.
    Type: Grant
    Filed: May 26, 2015
    Date of Patent: August 20, 2019
    Assignee: LG Display Co., Ltd.
    Inventors: Ho Won Choi, Hye Sook Kim
  • Patent number: 10374130
    Abstract: A light-emitting element comprises a substrate; a light-emitting semiconductor stack on the substrate, the light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a protection layer formed on the light-emitting semiconductor stack; and a conductive contact layer formed on the light-emitting semiconductor stack, wherein each layer above the substrate comprises a side surface inclined to a top surface of the substrate.
    Type: Grant
    Filed: September 28, 2016
    Date of Patent: August 6, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Schang-Jing Hon, Chao-Hsing Chen, Tsun-Kai Ko, Chien-Fu Shen, Jia-Kuen Wang, Hung-Che Chen
  • Patent number: 10370590
    Abstract: A phosphor is represented by the general formula aMIX·MII1-xMIMVO4:(Re)x where MI is at least one atomic element selected from the group consisting of K, Li, Na, Rb, Cs, Fr, Cu, and Ag, with K being essential; MII is at least one atomic element selected from the group consisting of Mg, Ca, Sr, Ba, Ra, Mn, Zn, Cd, and Sn; MV is at least one atomic element selected from the group consisting of P, V, Nb, Ta, As, Sb, and Bi; X is at least one halogen element, with F being essential; Re is at least one atomic element selected from the group consisting of rare earth elements, with Eu being essential; and a is in the range 0.6?a?1.4.
    Type: Grant
    Filed: August 26, 2016
    Date of Patent: August 6, 2019
    Assignees: KOITO MANUFACTURING CO., LTD., TOKYO INSTITUTE OF TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Hisayoshi Daicho, Yu Shinomiya, Kiminori Enomoto, Hideo Hosono, Satoru Matsuishi, Hiroshi Sawa, Akitoshi Nakano
  • Patent number: 10371368
    Abstract: A retrofit lighting system is provided comprising a power supply assembly configured to convert an AC input voltage into a DC output voltage and to adapt the DC output voltage to a substantially constant current level to be defined as a regulated current, at least one distribution wire in electrical communication with the power supply assembly and configured to conduct the regulated current, and at least one respective luminaire assembly spaced apart from and in electrical communication with the power supply assembly, and configured to receive the regulated current from the at least one distribution wire. The DC output voltage may be about 12 volts or less.
    Type: Grant
    Filed: August 23, 2016
    Date of Patent: August 6, 2019
    Inventors: Fredric S. Maxik, David E. Bartine, James Lynn Schellack, Addy S. Widjaja
  • Patent number: 10374127
    Abstract: Systems and methods for electronic devices are presented. A device includes a substrate. An Indium Gallium Nitride (InGaN) nanoring is formed over the substrate. The InGaN nanoring includes an alloy of Indium Nitride (InN) and Gallium Nitride (GaN). The alloy includes at least 6 percent Indium. A GaN layer may be formed over the InGaN nanoring, and a first electrode is formed over the GaN layer. In one embodiment, the alloy includes less than about 70 percent Indium.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: August 6, 2019
    Assignee: NXP USA, Inc.
    Inventor: Nirmal David Theodore
  • Patent number: 10371954
    Abstract: The present disclosure describes optoelectronic modules (e.g., hybrid lens array packages) that have multiple optical channels, each of which includes at least one beam shaping element (e.g., a lens) that is part of a laterally contiguous array. Each optical channel is associated with a respective light sensitive region of an image sensor. Some or all of the channels also can include at least one beam shaping element (e.g., a lens) that is not part of a laterally contiguous array. In some cases, the arrays can include alignment features to facilitate alignment of the arrays with one another.
    Type: Grant
    Filed: June 4, 2015
    Date of Patent: August 6, 2019
    Assignee: ams Sensors Singapore Pte. Ltd.
    Inventors: Daniel Perez Calero, Kai Engelhardt, Hartmut Rudmann, Tobias Senn
  • Patent number: 10371999
    Abstract: A manufacturing method of an array substrate includes the steps of providing a base plate and forming a thin-film transistor (TFT) layer on the base plate; forming a quantum dot layer on the TFT layer; and forming a protective filter layer on the quantum dot layer to provide protection to the quantum dot layer. The protective filter layer also provides an effect of light filtering in order to prevent ultraviolet light or blue light from transmitting therethrough.
    Type: Grant
    Filed: May 24, 2018
    Date of Patent: August 6, 2019
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Xiaoping Cheng, Yungjui Lee
  • Patent number: 10374191
    Abstract: Provided is a display device, comprising a display panel which comprises a first area and a second area located around the first area; and an under-panel sheet which is located under the display panel and overlaps the first area and the second area, wherein the under-panel sheet comprises a buffer member and a strength reinforcing member, wherein the strength reinforcing member is thinner than the buffer member, and a ratio of a thickness of the buffer member to a thickness of the strength reinforcing member is 3 to 6 times.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: August 6, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Youn Hwan Jung, Kyu Han Bae, Jae Lok Cha, Kang Yong Lee
  • Patent number: 10374018
    Abstract: A display device with improved viewing angle characteristics is provided. A display device with suppressed mixture of colors between adjacent pixels is provided. The display device includes a first coloring layer, a second coloring layer, and a structure body therebetween. The structure body has a portion closer to a display surface side than a bottom surface of the first coloring layer or a bottom surface of the second coloring layer.
    Type: Grant
    Filed: August 25, 2016
    Date of Patent: August 6, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tomoya Aoyama, Ryu Komatsu, Daiki Nakamura
  • Patent number: 10374174
    Abstract: An organometallic compound represented by Formula 1: wherein in Formula 1, groups and variables are the same as described in the specification.
    Type: Grant
    Filed: November 3, 2015
    Date of Patent: August 6, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Bumwoo Park, Yoonhyun Kwak, Hyun Koo, Jiwhan Kim, Sunyoung Lee, Jiyoun Lee
  • Patent number: 10367148
    Abstract: To provide a light-emitting element which emits light in a near-infrared region and has high efficiency and long life, and a light-emitting device, an authentication device, and an electronic apparatus, each of which includes this light-emitting element. A light-emitting device 100 of the invention includes a light-emitting element 1A including an anode 3, a cathode 8, and a light-emitting layer 5 which is provided between the anode 3 and the cathode 8 and emits light in a near-infrared region by applying a current between the anode 3 and the cathode 8, wherein the device emits visible light with a luminance of 5 cd/m2 or more when a current is applied between the anode 3 and the cathode 8 at a current density of 300 A/cm2 or less.
    Type: Grant
    Filed: May 26, 2015
    Date of Patent: July 30, 2019
    Assignee: Seiko Epson Corporation
    Inventors: Tetsuji Fujita, Yuiga Hamade
  • Patent number: 10364391
    Abstract: A quantum dot includes a seed and a core enclosing the seed. The core is grown from the seed to improve size uniformity of the core. The seed includes a first compound without Cd. The first compound may be GaP. The core may include a second compound including elements from group XIII and group XV. The second compound may be InP. The quantum dot may also include a first shell of a third compound enclosing the core. The third compound may be ZnSe or ZnS. The quantum dot may also include a second shell of a fourth compound enclosing the first shell. The fourth compound may be ZnS when the third compound is ZnSe. Embodiments also relate to a quantum dot including first to third elements selected from XIII group elements and XV group elements and fourth to sixth elements selected from XII group elements and XVI group elements.
    Type: Grant
    Filed: August 26, 2016
    Date of Patent: July 30, 2019
    Assignee: LG Display Co., Ltd.
    Inventors: Kyung-Kook Jang, Byung-Geol Kim, Wy-Yong Kim, Kyu-Nam Kim, Hee-Yeol Kim, Sung-Il Woo, Do-Hyung Kim, Tae-Yang Lee
  • Patent number: 10361250
    Abstract: An array of dielectric resonators is formed on a substrate. Each resonator includes an active medium having an optical transition that is operative in a process of photodetection or photoemission. The active media each include a quantum well multilayer. The dielectric resonators in the array are each dimensioned to provide a resonance that lies substantially at the frequency of the optical transition.
    Type: Grant
    Filed: October 10, 2018
    Date of Patent: July 23, 2019
    Assignee: National Technology & Engineering Solutions of Sandia, LLC
    Inventors: Sheng Liu, Igal Brener, Michael B. Sinclair
  • Patent number: 10351963
    Abstract: Important components of direct solar based nanowire enabled chemical processing and electrochemical systems are a high efficiency and highly stable photocathode and 2-photon dual electrodes. The former enables photo-excited electrons that lead to hydrogen generation whereas the later with complementary energy bandgap photoanode and photocathode enables high efficiency, unassisted solar-driven water splitting. Accordingly, it would be beneficial to leverage the high surface areas and self-contained conversion of direct solar illuminated hydrogen generation from such nanowires with multiple junctions for broad solar spectrum absorption by providing monolithically integrated multi-junction photocathodes. It would be further beneficial to provide nanowire based dual-photoelectrode systems that together with a parallel illumination scheme, can fundamentally address these critical challenges.
    Type: Grant
    Filed: March 16, 2016
    Date of Patent: July 16, 2019
    Assignee: THE ROYAL INSTITUTION FOR THE ADVANCEMENT OF LEARNING/ MCGILL UNIVERSITY
    Inventors: Zetian Mi, Shizhao Fan, Bandar Alotaibi
  • Patent number: 10355174
    Abstract: A component includes a carrier and a semiconductor body arranged on the carrier, wherein the semiconductor body has an active layer arranged between the first and second semiconductor layers and is configured to generate, during operation of the component, an electromagnetic radiation that can be coupled out from the component through a first main surface, the first main surface of the component has an electrical contact layer configured to electrically contact a first semiconductor layer and in a plan view the carrier covers the first main surface in places, and in direct vicinity of the electrical contact layer the component includes a shielding structure configured to prevent electromagnetic radiation generated by the active layer from impinging onto the contact layer.
    Type: Grant
    Filed: July 12, 2016
    Date of Patent: July 16, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Markus Maute, Lutz Höppel, Jürgen Moosburger, Thomas Schwarz, Matthias Sabathil, Ralph Wirth, Alexander Linkov, Johannes Baur
  • Patent number: 10355053
    Abstract: Examples of the present disclosure provide an organic light-emitting diode, a display panel and a display device. This organic light-emitting diode includes a red light-emitting layer and a green light-emitting layer provided in a layer-built manner. The organic light-emitting diode also includes an exciton blocking layer, which is provided between the red light-emitting layer and the green light-emitting layer.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: July 16, 2019
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Wenbin Jia, Li Sun, Xinwei Gao, Xiang Wan
  • Patent number: 10340475
    Abstract: The present invention provides an OLED panel fabrication method and an OLED panel.
    Type: Grant
    Filed: September 15, 2017
    Date of Patent: July 2, 2019
    Assignee: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
    Inventor: Chienlin Wu
  • Patent number: 10340421
    Abstract: A light emitting device is provided. The light emitting device includes a first type semiconductor layer, a second type semiconductor layer, an active layer, a plurality of first electrodes, and a second electrode. The first type semiconductor layer includes a plurality of low resistance portions and a high resistance portion. The low resistance portions are isolated from one another by the high resistance portion. The active layer is present between the first type semiconductor layer and the second type semiconductor layer. The active layer includes a first region and at least one second region. A threading dislocation density of the first region is greater than a threading dislocation density of the second region, and a vertical projection of at least one of the low resistance portions on the active layer at least partially overlaps with the second region.
    Type: Grant
    Filed: March 19, 2018
    Date of Patent: July 2, 2019
    Assignee: MIKRO MESA TECHNOLOGY CO., LTD.
    Inventor: Li-Yi Chen
  • Patent number: 10325970
    Abstract: A display device including a first pixel electrode and a second pixel electrode disposed adjacent to each other on a substrate; a pixel defining layer including a first opening corresponding to the first pixel electrode, a second opening corresponding to the second pixel electrode, and a first convex portion arranged adjacent to the first opening; a first intermediate layer arranged on the first pixel electrode to correspond to the first opening and including a first emission layer; and a first conductive inorganic layer arranged on the first intermediate layer to correspond to the first opening. At least one end of the first conductive inorganic layer extends beyond an end of the first intermediate layer and is disposed on the pixel defining layer between the first opening and the second opening.
    Type: Grant
    Filed: December 11, 2017
    Date of Patent: June 18, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Hyunsung Bang, Arong Kim, Jungsun Park, Duckjung Lee, Jiyoung Choung
  • Patent number: 10326091
    Abstract: The present invention relates to an organic electrochemical device and a fabrication method thereof. The organic electrochemical device according to the present invention comprises: a substrate; a first electrode provided on the substrate; an intermediate layer provided on the first electrode; a second electrode provided on the intermediate layer; and a first organic material layer, in which at least a part of the first organic material layer is in contact with the second electrode and the intermediate layer.
    Type: Grant
    Filed: May 9, 2013
    Date of Patent: June 18, 2019
    Assignee: LG Chem, Ltd.
    Inventor: Tae-Sik Kang
  • Patent number: 10319912
    Abstract: A charge-transporting material including Structural Unit (1) represented by one of Formulae 1 and 2; and Structural Unit (2) represented by one of Formulae 3 and 4: wherein, in Formulae 1 to 4, groups and variables are the same as described in the specification.
    Type: Grant
    Filed: January 28, 2016
    Date of Patent: June 11, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Fumiaki Kato, Satoshi Inayama, Masaki Numata
  • Patent number: 10317712
    Abstract: The present invention discloses a display panel, the manufacturing method of the display panel, and a display device. The display panel comprises a first substrate with a display area and a non-display area, wherein the display area comprises a plurality of transistors, and a light sensor is adjacent to the plurality of transistors.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: June 11, 2019
    Assignees: HKC CORPORATION LIMITED, CHONGQING HKC OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: En-Tsung Cho, Fengyun Yang
  • Patent number: 10312417
    Abstract: In a method according to embodiments of the invention, for a predetermined amount of light produced by a light emitting diode and converted by a phosphor layer comprising a host material and a dopant, and for a predetermined maximum reduction in efficiency of the phosphor at increasing excitation density, a maximum dopant concentration of the phosphor layer is selected.
    Type: Grant
    Filed: December 23, 2015
    Date of Patent: June 4, 2019
    Assignee: Koninklijke Philips N.V.
    Inventors: Gerd Mueller, Regina Mueller-Mach, Peter Josef Schmidt, Danielle Russell Chamberlin, Oleg Borisovich Shchekin, Hans-Helmut Bechtel
  • Patent number: 10312290
    Abstract: Various embodiments may relate to an optoelectronic component, including an optoelectronic structure formed for providing an electromagnetic radiation, a measuring structure formed for measuring the electromagnetic radiation, and a waveguide formed for guiding the electromagnetic radiation. The optoelectronic structure and the measuring structure are optically coupled to the waveguide. The waveguide includes scattering centers distributed in a matrix, wherein the scattering centers are distributed in the matrix in such a way that part of the electromagnetic radiation is guided from the optoelectronic structure to the measuring structure.
    Type: Grant
    Filed: January 22, 2015
    Date of Patent: June 4, 2019
    Assignee: OSRAM OLED GMBH
    Inventor: Thomas Wehlus
  • Patent number: 10312285
    Abstract: An LED illuminator includes an LED chip and an opaque resin member. The LED chip includes a support substrate, a semiconductor layer disposed on the obverse surface of the support substrate, an electrode formed on the reverse surface of the support substrate. The obverse surface of the support substrate has a peripheral edge portion exposed from the semiconductor layer. The opaque resin member covers at least apart of the side surface of the support substrate while exposing the peripheral edge portion of the obverse surface of the support substrate.
    Type: Grant
    Filed: September 26, 2016
    Date of Patent: June 4, 2019
    Assignee: ROHM CO., LTD.
    Inventor: Shinsei Mizuta
  • Patent number: 10313551
    Abstract: A control system controls an image forming unit that includes a charging device, an image bearer to be charged by the charging device, a light-emitting device array including a plurality of light emitting devices, and a driving causing the light emitting devices to emit light to form a latent image on the image bearer. The control system includes a storage unit, a corrector, and a controller. The storage unit is configured to store a light-amount correction value of each of the light emitting devices. The corrector is configured to correct a pixel value of each pixel in image data, based on the light-amount correction value of each light emitting device stored in the storage unit. The controller is configured to control the driver to cause each light emitting device to emit light based on image data for which a pixel value of each pixel has been corrected.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: June 4, 2019
    Assignee: Ricoh Company, Ltd.
    Inventors: Naoto Shiraishi, Shinji Kobayashi
  • Patent number: 10304915
    Abstract: The present application discloses a method of fabricating a display substrate. The method includes forming a sacrificial layer including a plurality of sacrificial blocks on a base substrate; forming a pixel definition material layer on the base substrate subsequent to forming the sacrificial layer; and removing the sacrificial layer thereby forming a pixel definition layer comprising a plurality of pixel definition blocks. Each of the plurality of sacrificial blocks is formed to have a first side surface distal to the base substrate, a second side surface facing the first side surface and proximal to the base substrate, and a third side surface connecting the first side surface and the second side surface. An average tangential inclination of the third side surface with respect to the second side surface is an acute angle.
    Type: Grant
    Filed: April 17, 2017
    Date of Patent: May 28, 2019
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Dejiang Zhao
  • Patent number: 10297723
    Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.
    Type: Grant
    Filed: April 9, 2018
    Date of Patent: May 21, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Bo-Jiun Hu, Tsung-Hsun Chiang, Wen-Hung Chuang, Kuan-Yi Lee, Yu-Ling Lin, Chien-Fu Shen, Tsun-Kai Ko
  • Patent number: 10295157
    Abstract: A lighting device includes a printed circuit board (PCB), a submount mounted on the PCB, a die mounted on the submount and including a plurality of light emitting devices, and a pad inserted into a hole formed in the submount such that the die and the PCB are electrically connected through the submount, connected to the die by a wire bonding, and electrically connected to the PCB.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: May 21, 2019
    Assignee: LG ELECTRONICS INC.
    Inventors: Changhwan Lee, Jinwon Kang, Hangtae Kim, Yunsup Shin, Minyoung Lee, Ayoung Cho
  • Patent number: 10290766
    Abstract: Disclosed in an embodiment is a light emitting device comprising: a first semiconductor layer; an active layer disposed on the first semiconductor layer and comprising a plurality of well layers and a plurality of barrier layers; and a second semiconductor layer disposed on the active layer. The active layer comprises at least one first well layer which emits light of a first wavelength range and at least one second well layer which emits light of a second wavelength range, wherein the light of the first wavelength range has a first peak in the 450 nm to 499 nm wavelength region, and the light of the second wavelength range has a second peak in the 500 nm to 550 nm wavelength region.
    Type: Grant
    Filed: May 19, 2016
    Date of Patent: May 14, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Chong Cook Kim
  • Patent number: 10283726
    Abstract: An electricity-generating layer of a solar cell includes a carbon nanotube group containing vertically oriented carbon nanotubes. A fullerene is encapsulated in the carbon nanotube, an n-type dopant 113 is encapsulated between the fullerene and one end of the carbon nanotube, and a p-type dopant is encapsulated between the fullerene and the other end of the carbon nanotube.
    Type: Grant
    Filed: August 27, 2013
    Date of Patent: May 7, 2019
    Assignees: KYOTO UNIVERSITY, HITACHI ZOSEN CORPORATION
    Inventors: Kazushi Hiraoka, Kazunari Matsuda, Yuhei Miyauchi, Shinichirou Mouri
  • Patent number: 10276750
    Abstract: A bonding electrode structure of a flip-chip LED chip includes: a substrate; a light-emitting epitaxial layer over the substrate; a bonding electrode over the light-emitting epitaxial layer, wherein the bonding electrode structure includes a metal laminated layer having a bottom layer and an upper surface layer from bottom up. The bottom layer structure is oxidable metal and the side wall forms an oxide layer. The upper surface layer is non-oxidable metal. The bonding electrode structure has a main contact portion, and a grid-shape portion surrounding the main contact portion in a horizontal direction. The problems during packaging and soldering of the flip-chip LED chip structure, such as short circuit or electric leakage, can thus be solved.
    Type: Grant
    Filed: December 31, 2017
    Date of Patent: April 30, 2019
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Zhibai Zhong, Lixun Yang, Jinjian Zheng, Chia-en Lee, Chen-ke Hsu, Junyong Kang
  • Patent number: 10270051
    Abstract: A light-emitting element is provided. The light-emitting element includes first and second electrodes and an EL layer therebetween. The EL layer includes a light-emitting layer containing first and second substances. The amount of the first substance is larger than that of the second substance. The second substance emits light. Average transition dipole moments of the second substance are divided into three components in x-, y-, and z-directions which are orthogonal to each other. Components parallel to the first or second electrode are assumed to be the components in the x- and y-directions, and a component perpendicular to the first or second electrode is assumed to be the component in the z-direction. The proportion of the component in the z-direction is represented by a, which is less than or equal to 0.2.
    Type: Grant
    Filed: May 25, 2018
    Date of Patent: April 23, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Hiromi Seo, Tsunenori Suzuki, Hiromitsu Kido
  • Patent number: 10263093
    Abstract: An optoelectronic semiconductor includes a carrier, a semiconductor main body having a first semiconductor layer, a second semiconductor layer, and a radiation emitting layer for generating electromagnetic radiation, the semiconductor main body having at least one recess extending through the radiation emitting layer; a first electrode and a second electrode; a first electrical connection layer electrically connected between the first semiconductor layer and the first electrode; a second electrical connection layer electrically connected between the second semiconductor layer and the second electrode and extending through the recess from the carrier to the second semiconductor layer; and a zener diode structure disposed between the first electrical connection layer and the second electrical connection layer so that the first electrical connection layer and the second electrical connection layer are electrically dependent, wherein at least a portion of the zener diode structure is located in a current path bet
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: April 16, 2019
    Assignee: HIGH POWER OPTO. INC.
    Inventors: Wei-Yu Yen, Li-Ping Chou, Wan-Jou Chen, Chih-Sung Chang
  • Patent number: 10263219
    Abstract: A radiation-emitting component is disclosed. Embodiments of the invention relate to a radiation-emitting component with an organic layer stack which is arranged on a substrate. An outcoupling structure is arranged on a substrate face facing the organic layer stack, an additional optical layer is arranged between the substrate and the outcoupling structure, and the additional optical structure has a refractive index which is lower than the refractive index of the substrate, or the additional optical layer forms a mirror which has a selective angle and which only allows light that can be coupled out of the substrate at a substrate boundary surface facing away from the organic layer sequence to pass, the light being generated in the organic layer stack during operation.
    Type: Grant
    Filed: August 28, 2014
    Date of Patent: April 16, 2019
    Assignee: OSRAM OLED GMBH
    Inventors: Christopher Wiesmann, Thomas Wehlus
  • Patent number: 10260734
    Abstract: A light source unit disclosed in an embodiment includes a first cover which has an open region; a second cover which is coupled to the first cover; a light source module which is disposed between the first cover and the second cover, and has a light-emitting device disposed on the open region and a circuit board on which the light-emitting device is disposed; a fixing frame which is disposed between the second cover and the circuit board; and a resin member which is filled in an region between the first cover and the second cover and supports the light source module and the fixing frame. The light source module includes a moisture-proof film which covers an upper surface and side surfaces of the light-emitting device and extends to an upper surface of the circuit board.
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: April 16, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Do Hwan Kim, Jae Jin Kim
  • Patent number: 10249792
    Abstract: A method of producing a semiconductor device includes forming a stack including a semiconductor material having a Group III nitride semiconductor material formed on a growth substrate, a protective layer formed over the Group III nitride semiconductor material, and a handle layer and a stressor layer formed over the protective layer. The stack is spalled to separate the growth substrate from the stack.
    Type: Grant
    Filed: October 24, 2017
    Date of Patent: April 2, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Stephen W. Bedell, Keith E. Fogel, Paul A. Lauro, Devendra K. Sadana
  • Patent number: 10236473
    Abstract: Reflection layers are arranged for respective pixels with predetermined intervals in a row direction (X direction) and a column direction (Y direction) in a display region, and, subsequently to the display region, are arranged in the same manner with the predetermined intervals in the row direction (X direction) and the column direction (Y direction) also in a peripheral region around the display region. First electrodes, first light path adjusting layers, and second light path adjusting layers are arranged for the respective pixels in the display region, and are arranged so as to correspond to the respective reflection layers also in the peripheral region. The respective reflection layers are partially connected to each other in the peripheral region and are electrically connected to a second electrode at a cathode potential.
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: March 19, 2019
    Assignee: SEIKO EPSON CORPORATION
    Inventors: Takeshi Koshihara, Hitoshi Ota
  • Patent number: 10235911
    Abstract: A badge mounted on a vehicle is provided herein. The badge includes a substrate and a housing attached thereto defining a cavity therebetween. A light source is configured to emit an excitation light. A first photoluminescent structure and a second photoluminescent structure are disposed within the badge and each is configured to convert the excitation light emitted from the light source into a converted light of a different wavelength. A light scattering layer is disposed between the first and second photoluminescent structures.
    Type: Grant
    Filed: January 12, 2016
    Date of Patent: March 19, 2019
    Assignee: Ford Global Technologies, LLC
    Inventors: Stuart C. Salter, Paul Kenneth Dellock, Michael A. Musleh, Pietro Buttolo
  • Patent number: 10236414
    Abstract: A semiconductor light emitting device and a method of manufacturing a semiconductor light emitting device, the device including a first conductive semiconductor layer including a plurality of V-shaped recesses; an active layer on the first conductive semiconductor layer along a shape of the plurality of V-shaped recesses; a second conductive semiconductor layer on the active layer; a reflection assisting layer on the second conductive semiconductor layer; and a reflection layer on the reflection assisting layer, wherein a thickness of the second conductive semiconductor layer is 45 nm to 100 nm.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: March 19, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong Yul Lee, Jung Kyu Park, Jae Sung Hyun
  • Patent number: 10228412
    Abstract: A purpose of the present invention is to provide a technique capable of suppressing an electric discharge during evaluation. A semiconductor device includes: a semiconductor base body having an element region and a terminal region; a plurality of electrode pads disposed in an area that is in the element region of the semiconductor base body and is separated from the terminal region, an insulating protection film having an opening provided above each of the electrode pads; and a plurality of conductive layers disposed on the protection film and electrically connected to the plurality of electrode pads, respectively, through the opening. In a planar view, each of the conductive layers is extended to the terminal region or the vicinity of the terminal region.
    Type: Grant
    Filed: March 6, 2014
    Date of Patent: March 12, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventors: Hajime Akiyama, Akira Okada, Kinya Yamashita
  • Patent number: 10229961
    Abstract: A display device according to an exemplary embodiment of the present inventive concept includes: a substrate; a thin film transistor provided on a first side of the substrate; a first electrode connected with the thin film transistor; an organic emission layer provided on the first electrode and emitting light; a second electrode provided on the organic emission layer; and a light blocking layer contacting the substrate from a second side that faces the first side of the substrate, wherein the light is emitted in a direction toward the second electrode from the organic emission layer.
    Type: Grant
    Filed: March 15, 2017
    Date of Patent: March 12, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Dong Wan Choi, Young Bin Kim
  • Patent number: 10224443
    Abstract: An LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm, the device. The device includes a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others. The device has an active region overlying the substrate region, the active region comprising a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region. The light emitting spatial region is characterized by about 1 to 10 microns. The device includes an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region.
    Type: Grant
    Filed: April 17, 2017
    Date of Patent: March 5, 2019
    Assignee: RayVio Corporation
    Inventors: Douglas A. Collins, Faisal Sudradjat, Robert C. Walker, Yitao Liao
  • Patent number: 10224393
    Abstract: A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically insulating the first major face from the second major face at least with regard to one polarity of an electrical voltage; c) arranging a semiconductor layer sequence on the first major face of the carrier substrate; and d) singulating the carrier substrate with the semiconductor layer sequence into a plurality of semiconductor chips.
    Type: Grant
    Filed: June 6, 2017
    Date of Patent: March 5, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Ewald Karl Michael Günther, Andreas Plöβl, Heribert Zull, Thomas Veit, Mathias Kämpf, Jens Dennemarck, Bernd Böhm, Korbinian Perzlmaier
  • Patent number: 10222048
    Abstract: A light emitting device comprising a substrate (6) having an electrically conducting circuit layer (8), a LED package (7) surface mounted on the substrate (6) and electrically connected to the circuit layer (8), and a heat sink element, surface mounted on the substrate (6) separately from the LED package (7), the heat sink element having a body (2) of a heat conductive material surrounding the LED package (7), the body being thermally connected to the circuit layer (8), and being adapted to provide heat dissipation from the circuit layer (8) to a surrounding environment, wherein a surface (3) of the heat sink element facing the LED package is adapted to form part of a beam shaping optics for shaping light emitted from the LED package. Since the heat sink body is in thermal contact with the circuit layer, the heat resistance from the LED package to the heat sink body via the circuit layer is minimized.
    Type: Grant
    Filed: March 6, 2013
    Date of Patent: March 5, 2019
    Assignee: PHILIPS LIGHTING HOLDING B.V.
    Inventors: Antonius Petrus Marinus Dingemans, Wilhelmus Gerardus Maria Peels
  • Patent number: 10222539
    Abstract: Disclosed herein are a light emitting device package, a backlight unit, and a method of manufacturing a light emitting apparatus capable of being used for a display application or an illumination application. The light emitting device package includes: a substrate, a light emitting, a reflection molding member, an upper cover, and an interval maintaining part.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: March 5, 2019
    Assignee: LUMENS CO., LTD.
    Inventors: Seung-Hyun Oh, Dae-Gil Jung, Jung-Hyun Park, Hyo-Gu Jeon
  • Patent number: 10205058
    Abstract: A light-emitting device package of embodiments comprises: a substrate; a light-emitting structure which is arranged below the substrate comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first electrode which is connected to the first conductive type semiconductor layer; a first insulation layer which is arranged on the side section of the light-emitting structure and the side and lower sections of the first electrode; a first pad which passes through the first insulation layer and is connected to the first conductive type semiconductor layer; a second electrode which passes through the first insulation layer, the first conductive type semiconductor layer and the active layer and is connected to the second conductive type semiconductor layer; a second pad which is connected to the second electrode; and a protective layer which extends from the top of the first insulation layer arranged on the side section of the light-emitting structure
    Type: Grant
    Filed: November 16, 2015
    Date of Patent: February 12, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Sang Youl Lee
  • Patent number: 10205056
    Abstract: A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, a second electrode, a static electrode and a carbon nanotube structure. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on the substrate. The first electrode is located on and electrically connected to the first semiconductor layer. The carbon nanotube structure is located on and electrically connected to the second semiconductor layer. The second electrode is located on and electrically connected to the carbon nanotube structure. The static electrode is located between the second semiconductor layer and the carbon nanotube structure. The carbon nanotube structure includes a first portion in direct contact with the second semiconductor layer and a second portion sandwiched between the static electrode and the second electrode.
    Type: Grant
    Filed: June 28, 2017
    Date of Patent: February 12, 2019
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Qun-Qing Li, Kai-Li Jiang, Shou-Shan Fan