Incoherent Light Emitter Structure Patents (Class 257/79)
  • Patent number: 11043422
    Abstract: Implementations of a method singulating a plurality of semiconductor die. Implementations may include: forming a pattern in a back metal layer coupled on a first side of a semiconductor substrate where the semiconductor substrate includes a plurality of semiconductor die. The method may include etching substantially through a thickness of the semiconductor substrate at the pattern in the back metal layer and jet ablating a layer of passivation material coupled to a second side of the semiconductor substrate to singulate the plurality of semiconductor die.
    Type: Grant
    Filed: March 3, 2020
    Date of Patent: June 22, 2021
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventor: Michael J. Seddon
  • Patent number: 11040522
    Abstract: Disclosed is a polyimide cover substrate, which is configured such that a device protection layer is formed of a urethane acrylate compound on at least one side of a polyimide film, thereby exhibiting not only high flexural properties and impact resistance but also superior solvent resistance, optical properties and scratch resistance and low water vapor transmission rate, and thus can be effectively utilized as a cover substrate for a flexible electronic device.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: June 22, 2021
    Assignee: KOLON INDUSTRIES, INC.
    Inventors: Hak Yong Woo, Hak Gee Jung, Ki Il Hong
  • Patent number: 11038002
    Abstract: A double-sided display device and a method of manufacturing the same are provided. The double-sided display device includes a substrate, an active layer, an electrical insulating layer, a pixel defining layer, and a first display region and a second display region. The first display region includes a first transparent anode, a first electroluminescence film, and a first reflective cathode. The second display region includes a reflective anode, a second transparent anode, a second electroluminescence film, and a transparent cathode. The method includes steps of: S1: manufacturing an active layer, S2: manufacturing an electrical insulating layer, S3: manufacturing source/drain electrodes, S4: manufacturing a reflective anode, S5: manufacturing a transparent anode, S6: manufacturing a pixel defining layer, S7: manufacturing an electroluminescence film, S8: manufacturing a reflective cathode, and S9: manufacturing a transparent cathode.
    Type: Grant
    Filed: January 15, 2019
    Date of Patent: June 15, 2021
    Assignee: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
    Inventor: Jie Liu
  • Patent number: 11031525
    Abstract: A micro light emitting diode chip having a plurality of light-emitting regions, including a semiconductor epitaxial structure, a first electrode and a plurality of second electrodes disposed at interval is provided. The semiconductor epitaxial structure includes a first-type doped semiconductor layer, a plurality of second-type doped semiconductor layers and a plurality of light-emitting layers disposed at interval. The light-emitting layers are located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The light-emitting layers are located in the light-emitting regions respectively and electrically contact to the first-type doped semiconductor layer. The first electrode is electrically connected and contacts to the first-type doped semiconductor layers. The second electrodes are electrically connected to the second-type doped semiconductor layers. Furthermore, a display panel is also provided.
    Type: Grant
    Filed: July 21, 2020
    Date of Patent: June 8, 2021
    Assignee: PlayNitride Inc.
    Inventors: Yu-Hung Lai, Yu-Yun Lo, Tzu-Yang Lin
  • Patent number: 11024668
    Abstract: A display device includes a plurality of pixel tiles spaced apart from each other, each of the pixel tiles including a substrate and a plurality of light emitting stacked structures disposed on the substrate, in which a distance between two adjacent light emitting stacked structures in the same pixel tile is substantially equal to a shortest distance between two adjacent light emitting stacked structures of different pixel tiles.
    Type: Grant
    Filed: December 31, 2018
    Date of Patent: June 1, 2021
    Inventors: Chung Hoon Lee, Jong Hyeon Chae
  • Patent number: 11018321
    Abstract: A sealing structure (200) seals a light emitting unit (140) and includes a first inorganic film (210), a second inorganic film (220), a first resin-containing film (230), and a second resin-containing film (240). The film thickness of the first inorganic film (210) is equal to or greater than 1 nm and equal to or less than 300 nm. The first resin-containing film (230) is in contact with the first inorganic film (210) and includes a first resin. The second inorganic film (220) is positioned on an opposite side of the first inorganic film (210) with the first resin-containing film (230) interposed between the first and second inorganic films. The second resin-containing film (240) is positioned between the first resin-containing film (230) and the second inorganic film (220) and is in contact with the second inorganic film (220). The second resin-containing film (240) includes a second resin.
    Type: Grant
    Filed: February 19, 2020
    Date of Patent: May 25, 2021
    Assignee: PIONEER CORPORATION
    Inventor: Shinichi Tanisako
  • Patent number: 11018281
    Abstract: An optoelectronic semiconductor body includes an active region including a quantum well that generates electromagnetic radiation, a first region that impedes passage of charge carriers from the active region, and a second region that impedes passage of charge carriers from the active region, wherein the semiconductor body is based on a nitride compound semiconductor material, the first region is directly adjacent to the active region on a p-side, the second region is arranged on a side of the first region facing away from the active region, the first region has an electronic band gap larger than the electronic band gap of the quantum well and less than or equal to an electronic band gap of the second region, and the first region and the second region contain aluminum.
    Type: Grant
    Filed: June 26, 2017
    Date of Patent: May 25, 2021
    Assignee: OSRAM OLED GmbH
    Inventors: Werner Bergbauer, Joachim Hertkorn, Alexander Walter
  • Patent number: 11018325
    Abstract: An organic light emitting diode display includes an organic light emitting display panel including an upper surface receiving first incident light from outside and a lower surface opposite to the upper surface, a light transmission preventing layer including a base layer and an adhesive layer which is between the base layer and the organic light emitting display panel and bonded thereto, the adhesive layer including a facing surface facing the lower surface and a plurality of patterns protruded from the facing surface toward the organic light emitting display panel to define a plurality of gaps between the lower surface and the facing surface. The adhesive layer includes a light blocking material blocking second incident light which passes through the organic light emitting display panel to the light transmission preventing layer from among the first incident light received by the upper surface of the organic light emitting display panel.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: May 25, 2021
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventor: Jae-lok Cha
  • Patent number: 11018322
    Abstract: A light emitting device comprises an emission area and a non-emission area defined at a substrate, wherein the non-emission area includes a first non-emission area and a second non-emission area where a first pad and a second pad are respectively disposed; a light emitting diode disposed over the substrate and including a first electrode, an emission layer and a second electrode; an auxiliary electrode directly contacting the first electrode; a buffer layer disposed between the substrate and the light emitting diode; and a light extraction layer disposed between the buffer layer and the substrate, wherein the first electrode includes a contact portion directly contacting the auxiliary electrode, an electrode portion disposed in the emission area and a short-circuit-preventing portion disposed between the contact portion and the electrode portion.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: May 25, 2021
    Assignee: LG DISPLAY CO., LTD.
    Inventor: Sung-Wook Ko
  • Patent number: 11011676
    Abstract: Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.
    Type: Grant
    Filed: June 15, 2016
    Date of Patent: May 18, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Mingwei Zhu, Rongjun Wang, Nag B. Patibandla, Xianmin Tang, Vivek Agrawal, Cheng-Hsiung Tsai, Muhammad Rasheed, Dinesh Saigal, Praburam Gopal Raja, Omkaram Nalamasu, Anantha Subramani
  • Patent number: 11011675
    Abstract: Disclosed in an embodiment are a semiconductor device and a semiconductor device package including the same, the semiconductor device comprising: a semiconductor structure including a first light emitting unit and a second light emitting unit; a first electrode for electrically connecting a first conductive type semiconductor layer of the first light emitting unit with a first conductive type semiconductor layer of the second light emitting unit; and a second electrode for electrically connecting a second conductive type semiconductor layer of the first light emitting unit with a second conductive type semiconductor layer of the second light emitting unit, wherein: the first electrode includes a first pad arranged on the first light emitting unit, a first branch electrode arranged on the first light emitting unit, and a first extension electrode arranged on the second light emitting unit; the second electrode includes a second pad arranged on the second light emitting unit, a second branch electrode arranged
    Type: Grant
    Filed: April 3, 2018
    Date of Patent: May 18, 2021
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Yong Nam Park, June O Song, Myeong Soo Kim, Seong Jun Park
  • Patent number: 10998475
    Abstract: A micro semiconductor chip, a micro semiconductor structure, and a display device are provided. The micro semiconductor chip includes an epitaxial layer, a first electrode, a second electrode and a side light guide element. The epitaxial layer has a top surface, a bottom surface and a side surface. The first electrode and the second electrode are disposed on the bottom surface of the epitaxial layer. The side light guide element disposed on the side surface has a connecting portion and an extending portion. The connecting portion is in contact with a part of the extending portion, and the extending portion extends away from the side surface of the epitaxial layer. The extending portion has a top surface and a bottom surface, wherein a plane containing the top surface of the epitaxial layer forms an acute angle ?1 with a plane containing the top surface of the extending portion.
    Type: Grant
    Filed: November 21, 2019
    Date of Patent: May 4, 2021
    Assignee: PLAYNITRIDE DISPLAY CO., LTD.
    Inventors: Yi-Min Su, Chih-Ling Wu, Gwo-Jiun Sheu, Sheng-Chieh Liang, Tzu-Yang Lin
  • Patent number: 10989959
    Abstract: A backlight unit includes a first substrate, a plurality of LED chips on one surface of the first substrate and configured to emit light of a first color, a second substrate located opposite to the one surface of the first substrate, and a plurality of light modulation patterns on one surface of the second substrate facing the one surface of the first substrate so as to overlap the plurality of LED chips, respectively. Each of the plurality of light modulation patterns includes a first wavelength conversion pattern that converts the light of the first color into light of a second color. The first wavelength conversion pattern includes a first wavelength conversion layer on the one surface of the second substrate, a first organic encapsulation layer on the first wavelength conversion layer, and a barrier structure covering the first wavelength conversion layer and the first organic encapsulation layer.
    Type: Grant
    Filed: March 11, 2020
    Date of Patent: April 27, 2021
    Assignee: Samsung Display Co., Ltd.
    Inventors: Kwang Soo Bae, Beom Soo Park, Min Jeong Oh, Young Je Cho
  • Patent number: 10991901
    Abstract: This disclosure relates to an organic electroluminescent device, comprising: a light emitting layer comprising a plurality of light emitting regions arranged in an array, each light emitting region being an organic electroluminescent region; an electron transport layer, a cathode and a transflective layer successively disposed in a first direction from the light emitting layer towards a light emergent side of the organic electroluminescent device starting from the light emitting layer; and a hole transport layer, an anode and a reflective layer successively disposed in a second direction opposite to the first direction starting from the light emitting layer. In addition, in a projection region of at least one light emitting region on the hole transport layer, the hole transport layer has at least two portions of different thicknesses for selecting a wavelength range of light emitted by the at least one light emitting region and/or enhancing the emitted light.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: April 27, 2021
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Xing Fan, Guang Yan
  • Patent number: 10985019
    Abstract: A method of fabricating a semiconductor device includes plasma etching a portion of a plurality of metal dichalcogenide films comprising a compound of a metal and a chalcogen disposed on a substrate by applying a plasma to the plurality of metal dichalcogenide films. After plasma etching, a chalcogen is applied to remaining portions of the plurality of metal dichalcogenide films to repair damage to the remaining portions of the plurality of metal dichalcogenide films from the plasma etching. The chalcogen is S, Se, or Te.
    Type: Grant
    Filed: April 27, 2020
    Date of Patent: April 20, 2021
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Shih-Yen Lin, Kuan-Chao Chen, Si-Chen Lee, Samuel C. Pan
  • Patent number: 10985016
    Abstract: A semiconductor substrate that is used as an underlying substrate for epitaxial crystal growth carried out by the HVPE method includes a ?-Ga2O3-based single crystal, and a principal plane that is a plane parallel to a [100] axis of the ?-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer including a ?-Ga2O3-based single crystal and formed on the principal plane of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for producing an epitaxial wafer includes by using the HVPE method, epitaxially growing an epitaxial layer including a ?-Ga2O3-based single crystal on a semiconductor substrate that includes a ?-Ga2O3-based single crystal and has a principal plane parallel to a [100] axis of the ?-Ga2O3-based single crystal.
    Type: Grant
    Filed: November 16, 2016
    Date of Patent: April 20, 2021
    Assignees: Tamura Corporation, National University Corporation Tokyo University of Agriculture and Technology
    Inventors: Ken Goto, Yoshinao Kumagai, Hisashi Murakami
  • Patent number: 10985207
    Abstract: A display device includes a plurality of pixel tiles spaced apart from each other, each of the pixel tiles including a substrate and a plurality of light emitting stacked structures disposed on the substrate, in which a distance between two adjacent light emitting stacked structures in the same pixel tile is substantially equal to a shortest distance between two adjacent light emitting stacked structures of different pixel tiles.
    Type: Grant
    Filed: December 31, 2018
    Date of Patent: April 20, 2021
    Inventors: Chung Hoon Lee, Jong Hyeon Chae
  • Patent number: 10971455
    Abstract: Certain aspects of the present disclosure provide an integrated circuit (IC) package and techniques for fabricating the IC package. The IC package generally includes a substrate, an IC disposed above the substrate, and a shielding layer coupled to a layer of the substrate, wherein the shielding layer is disposed above the substrate adjacent to the IC, and below an upper surface of the IC.
    Type: Grant
    Filed: May 1, 2019
    Date of Patent: April 6, 2021
    Assignee: QUALCOMM Incorporated
    Inventors: Aniket Patil, Kuiwon Kang, Zhijie Wang, Ming Yi
  • Patent number: 10964847
    Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a barrier layer formed on the reflective stack; a protection layer formed on the barrier layer, comprising a first through hole and a second through hole; a first height balancer filled in the first through hole and formed on the protection layer; a second height balancer filled in the second through hole and formed on the protection layer; and a conductive contact layer comprising a first conductive part formed on the first height balancer and a second conductive part formed on the second height balancer.
    Type: Grant
    Filed: June 19, 2019
    Date of Patent: March 30, 2021
    Assignee: EPISTAR CORPORATION
    Inventors: Schang-Jing Hon, Chao-Hsing Chen, Tsun-Kai Ko, Chien-Fu Shen, Jia-Kuen Wang, Hung-Che Chen
  • Patent number: 10964846
    Abstract: A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type on a substrate, an active layer on the first semiconductor layer, a second semiconductor layer of a second conductivity type on the active layer, the second semiconductor layer being doped with magnesium (Mg), and having an upper surface substantially parallel to an upper surface of the substrate and a side surface inclined with respect to the upper surface of the substrate, and a third semiconductor layer of the second conductivity type on the second semiconductor layer, the third semiconductor layer being doped with magnesium (Mg) at a concentration different from that of the second semiconductor layer, and having an upper surface substantially parallel to the upper surface of the substrate and a side surface inclined with respect to the upper surface of the substrate.
    Type: Grant
    Filed: April 25, 2019
    Date of Patent: March 30, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong-Gun Lee, Joo-Sung Kim, Jong-Uk Seo, Young-Jo Tak
  • Patent number: 10957815
    Abstract: To provide a light-emitting device for achieving fluorescence emission with higher efficiency and longer life, a light-emitting device includes an exciton generation layer in which quantum dots are dispersed, a light-emitting layer in which light emitters, which are phosphors or phosphorescent members, are dispersed, the light-emitting layer adjoining the exciton generation layer in a vertical direction, a first electrode located on a lower side of the exciton generation layer and the light-emitting layer, and a second electrode located on an upper side of the exciton generation layer and the light-emitting layer, and the light emission spectrum of the quantum dots and the absorption spectrum of the light emitters at least partially overlap.
    Type: Grant
    Filed: September 5, 2017
    Date of Patent: March 23, 2021
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Yuto Tsukamoto, Shinichi Kawato, Tokiyoshi Umeda, Manabu Niboshi, Youhei Nakanishi, Hisayuki Utsumi, Masayuki Kanehiro, Shota Okamoto
  • Patent number: 10957837
    Abstract: A light source device can include a frame including a bottom wall and a side wall surrounding the bottom wall; a light source on the bottom wall; a wavelength converting structure disposed over the light source and including wavelength converting mediums therein; and a first heat sink disposed at a side of the frame to be opposite to the wavelength converting structure, in which the wavelength converting structure is disposed on and directly contacts a top surface of the side wall of the frame.
    Type: Grant
    Filed: September 10, 2018
    Date of Patent: March 23, 2021
    Assignee: LG DISPLAY CO., LTD.
    Inventors: Dong-Young Kim, Osamu Sato, Kazuki Watanabe
  • Patent number: 10950812
    Abstract: Discussed is an organic light emitting display device. The organic light emitting display device can include a first emission part, a second emission part on the first emission part, and a first P-type charge generation layer between the first emission part and the second emission part. The first emission part includes a first hole transport layer, a first emission layer, and a first electron transport layer. The second emission part includes a second hole transport layer, a second emission layer, and a second electron transport layer. The second hole transport layer and the first P-type charge generation layer are disposed adjacent to each other. The second hole transport layer includes a first material and a second material. The first material has an absolute value of a HOMO energy level which can be greater than an absolute value of a LUMO energy level of the first P-type charge generation layer.
    Type: Grant
    Filed: June 24, 2016
    Date of Patent: March 16, 2021
    Assignee: LG DISPLAY CO., LTD.
    Inventors: Yoondeok Han, JaeMan Lee, SoYeon Ahn, Heedong Choi, JungSoo Park
  • Patent number: 10948163
    Abstract: The present invention relates to a backlight unit for use in a display device. The backlight unit includes a circuit board, at least one light-emitting diode chip mounted on the circuit board, a plurality of reflection members arranged on the upper part of the light-emitting diode chip, and a light diffusing member. The light diffusing member has an incident surface on which light enters and an emitting surface from which light is emitted. The light diffusing member is arranged on the upper part of the circuit board. The plurality of reflection members are stacked on each other and reflect a part of light emitted from the upper surface of the light-emitting diode chip.
    Type: Grant
    Filed: June 8, 2020
    Date of Patent: March 16, 2021
    Assignee: SEOUL SEMICONDUCTOR CO., LTD.
    Inventor: Chung Hoon Lee
  • Patent number: 10950752
    Abstract: A method of producing a radiation-emitting semiconductor chip includes providing a growth substrate, epitaxially growing a buffer layer on the growth substrate such that a plurality of V-pits is generated in the buffer layer, epitaxially growing a radiation-generating active semiconductor layer sequence on the buffer layer, wherein the structure of the V-pits continues into the active semiconductor layer sequence, epitaxially growing a further layer sequence on the active semiconductor layer sequence, wherein the structure of the V-pits continues into the further layer sequence, selectively removing the further layer sequence from facets of the V-pits, wherein the further layer sequence remains on a main surface of the active semiconductor layer sequence, and epitaxially growing a p-doped semiconductor layer that completely or partially fills the V-pits.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: March 16, 2021
    Assignee: OSRAM OLED GmbH
    Inventors: Werner Bergbauer, Thomas Lehnhardt, Jürgen Off, Lise Lahourcade, Philipp Drechsel
  • Patent number: 10950676
    Abstract: An array substrate includes a base substrate including a plurality of pixel regions arranged in an array, a plurality of thin film transistors distributed within respective ones of the plurality of pixel regions, each of the thin film transistors including an active layer, a gate electrode, a source electrode and a drain electrode, the drain electrode including a first portion located in a second via, a passivation layer located on the source electrodes and the drain electrodes. The passivation layer is on the first portions of the drain electrode. A plurality of pixel electrodes are distributed within respective ones of the plurality of pixel regions and located on the passivation layer. Each of the pixel electrodes are electrically connected to a respective one of the drain electrodes through a respective third via that extends through the passivation layer.
    Type: Grant
    Filed: August 2, 2018
    Date of Patent: March 16, 2021
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Hongfei Cheng
  • Patent number: 10950653
    Abstract: A display device includes a plurality of pixel tiles spaced apart from each other, each of the pixel tiles including a substrate and a plurality of light emitting stacked structures disposed on the substrate, in which a distance between two adjacent light emitting stacked structures in the same pixel tile is substantially equal to a shortest distance between two adjacent light emitting stacked structures of different pixel tiles.
    Type: Grant
    Filed: December 31, 2018
    Date of Patent: March 16, 2021
    Inventors: Chung Hoon Lee, Jong Hyeon Chae
  • Patent number: 10938183
    Abstract: A distributed feedback (DFB) laser outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The DFB laser includes a separate confinement heterostructure layer positioned between the quantum well active layer and then-type cladding layer. The DFB laser includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and then-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The DFB laser has a function to select a specific wavelength by returning a specific wavelength in the wavelength-variable laser.
    Type: Grant
    Filed: November 1, 2019
    Date of Patent: March 2, 2021
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Junji Yoshida, Hirokazu Itoh, Satoshi Irino, Yuichiro Irie, Taketsugu Sawamura, Masaki Funabashi, Nobumasa Tanaka
  • Patent number: 10930814
    Abstract: A method for fabricating a multi-color light emitting pixel unit, includes: forming a stack structure on a substrate, the stack structure comprising a first metal layer, a first type of light emitting layer, a second metal layer, and a second type of light emitting layer in an order from bottom to top; patterning the second type of light emitting layer and the second metal layer until a portion of the first type of light emitting layer is exposed; and selectively etching the stack structure to form a first light emitting transistor and a second light emitting transistor, the first light emitting transistor including the first metal layer and the first type of light emitting layer, and the second light emitting transistor including the first metal layer, the first type of light emitting layer, the second metal layer, and the second type of light emitting layer.
    Type: Grant
    Filed: September 11, 2019
    Date of Patent: February 23, 2021
    Assignee: Jade Bird Display (Shanghai) Limited
    Inventors: Qiming Li, Qunchao Xu
  • Patent number: 10930820
    Abstract: A light emitting device includes a semiconductor laser element and a base member. The base member includes a bottom part, a frame part, and first and second electrode layers. The frame part forms a frame surrounding the semiconductor laser element. An area within an intersection line between the first inner surface and the bonding surface of the frame part has a size larger than a size of the arrangement surface of the bottom part. An area within an intersection line between the second inner surface and the bonding surface of the frame part has a size smaller than the size of the arrangement surface. The planar surface of the frame part intersects at least a part of the second inner surface. The planar surface and the second inner surface form a step portion on an inner side of the frame. The second electrode layer is disposed on the planar surface.
    Type: Grant
    Filed: May 31, 2019
    Date of Patent: February 23, 2021
    Assignee: NICHIA CORPORATION
    Inventors: Kazuma Kozuru, Kiyoshi Enomoto
  • Patent number: 10930824
    Abstract: A light emitting device including a blue light emitting portion configured to emit blue light, a green light emitting portion configured to emit green light, and a red light emitting portion configured to emit red light, in which the blue light emitting portion includes a near-UV light emitting diode chip and a first wavelength conversion portion for wavelength conversion of near-UV light emitted from the near-UV light emitting diode chip, the blue light emitted from the blue light emitting portion includes a first peak wavelength in a wavelength band corresponding to near-UV light and a second peak wavelength in a wavelength band corresponding to blue light, and an intensity of the first peak wavelength is in a range of 0% to 20% of an intensity of the second peak wavelength.
    Type: Grant
    Filed: March 27, 2019
    Date of Patent: February 23, 2021
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventor: Bo Yong Han
  • Patent number: 10930802
    Abstract: A semiconductor device package includes a substrate, a first encapsulant and a second encapsulant. The substrate has an optical region and a surface-mount technology (SMT) device region. The first encapsulant includes a first portion disposed on the optical region and covers the optical region and a second portion disposed on the SMT device region and covers the SMT device region. The second encapsulant is disposed on the substrate and covers at least a portion of the second portion of the first encapsulant and a portion of the first portion of the first encapsulant.
    Type: Grant
    Filed: May 3, 2018
    Date of Patent: February 23, 2021
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventor: Chanyuan Liu
  • Patent number: 10928574
    Abstract: Provided is a polarizing plate having an appropriate reflectance characteristic formed from an inexpensive material by an inexpensive production device. In a polarizing plate having a wire grid structure including: a transparent substrate; and a grid-like projection that is arranged on the transparent substrate at a pitch smaller than a wavelength of light in a used band and extends in a predetermined direction, an absorption layer constituting the grid-like projection contains an impurity semiconductor obtained by adding a minute amount of a specific element to an intrinsic semiconductor.
    Type: Grant
    Filed: May 29, 2019
    Date of Patent: February 23, 2021
    Assignee: Dexerials Corporation
    Inventors: Kazuyuki Shibuya, Shigeshi Sakakibara, Toshiaki Sugawara, Yusuke Matsuno, Akio Takada
  • Patent number: 10930892
    Abstract: An organic light-emitting diode (OLED) display panel and a method of manufacturing the same are disclosed. The OLED display panel includes a phase-compensated liquid crystal layer and a linear polarizer disposed on an organic light-emitting device layer. The phase-compensated liquid crystal layer is disposed between the organic light-emitting device layer and the linear polarizer. Polarized light is generated after external light passes through a linear polarizer and the phase-compensated liquid crystal layer and is reflected to go through again the phase-compensated liquid crystal layer in a direction perpendicular to a polarization direction of the linear polarizer. By providing a liquid crystal layer to achieve compensation for phase difference, the present application can overcome a problem of visual interference and glare effects brought about by the display panel due to external light.
    Type: Grant
    Filed: February 19, 2020
    Date of Patent: February 23, 2021
    Assignee: Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
    Inventors: Dezhi Weng, Gaozhen Wang, Kai Ma
  • Patent number: 10923536
    Abstract: An organic EL display device according to an embodiment of the present invention includes: a base material; a plurality of pixels located on the base material; a lower electrode included in each of the plurality of pixels; a bank defining the plurality of pixels; an organic material layer disposed on the lower electrode and on the bank and including a plurality of layers; and an upper electrode disposed on the organic material layer. In a first layer included in the organic material layer, a non-existent region where the first layer is cut off or has a thickness thinner than that of another region is formed, and the non-existent region is formed in at least a portion of an effective region of the pixel surrounded by the bank.
    Type: Grant
    Filed: August 5, 2019
    Date of Patent: February 16, 2021
    Assignee: Japan Display Inc.
    Inventor: Tomohiko Naganuma
  • Patent number: 10916685
    Abstract: An package structure includes a substrate, a pair of electrodes and a solder pad layer both electrically connected to each other and respectively disposed on two opposite surfaces of the substrate, a lighting diode arranged above the substrate and electrically connected to the pair of electrodes, a wall disposed on the substrate and arranged around the lighting diode, and a package compound disposed inside of the wall and covering the lighting diode. The package compound includes an attaching portion disposed on a top surface of the lighting diode, and a surrounding portion arranged around the attaching portion. The surrounding portion has an annular slot arranged on a top surface thereof. A bottom end of the annular slot is located at a position aligning with 25%˜90% of a thickness of the lighting diode along a height direction.
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: February 9, 2021
    Assignees: LITE-ON OPTO TECHNOLOGY (CHANGZHOU) CO., LTD., LITE-ON TECHNOLOGY CORPORATION
    Inventors: Wei-Te Cheng, Kuo-Ming Chiu, Meng-Sung Chou, Kai-Chieh Liang
  • Patent number: 10916580
    Abstract: A method of manufacturing an optoelectronic device, comprising the successive steps of: providing a substrate at least partially made of a semiconductor material and having first and second opposite faces; forming a stack of semiconductor layers on the first face, said stack including third and fourth opposite faces, the fourth face being on the side of the substrate, said stack including light-emitting diodes; forming through openings in the substrate from the side of the second face, said openings being opposite at least part of the light-emitting diodes and delimiting walls in the substrate; forming conductive pads on the fourth face in at least some of the openings in contact with the stack; and forming photoluminescent blocks in at least some of the openings.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: February 9, 2021
    Assignee: Aledia
    Inventors: Zheng-Sung Chio, Wei Sin Tan, Vincent Beix, Philippe Gilet, Pierre Tchoulfian
  • Patent number: 10903407
    Abstract: A semiconductor light emitting element includes a semiconductor layered body including an n-side semiconductor layer and a p-side semiconductor layer disposed above the n-side semiconductor layer, an insulating film defining a plurality of first n-side openings on the n-side semiconductor layer in an inner region and a plurality of second n-side openings on an outer peripheral region of the n-side semiconductor layer, an n-electrode disposed extending over the insulating film and the outer peripheral region of the n-side semiconductor layer and including: a plurality of first n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the first n-side openings, and a plurality of second n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the second n-side openings, at at least four corners of the outer peripheral region of the n-side semiconductor layer.
    Type: Grant
    Filed: July 30, 2019
    Date of Patent: January 26, 2021
    Assignee: NICHIA CORPORATION
    Inventors: Yasuhiro Miki, Koichi Takenaga
  • Patent number: 10903395
    Abstract: A light emitting structure that includes: first and second semiconductor layers having aluminum; and an active layer having aluminum between the first and the second semiconductor layers, the intensity exhibited in the second semiconductor layer range between a first minimum intensity of the secondary ions and a first maximum intensity of the secondary ions, and the intensity exhibited in the first semiconductor layer include a second minimum intensity of the secondary ions, the second minimum intensity being different from the first minimum intensity, and at a first prescribed distance from a surface of the second semiconductor layer, the second semiconductor layer exhibits a first intermediate intensity of the secondary ions corresponding to the second minimum intensity, which is between the first minimum intensity and the first maximum intensity, wherein the first maximum intensity occurs at a second prescribed distance from the first prescribed distance, wherein a ratio of the second prescribed distance (
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: January 26, 2021
    Assignee: LG Innotek Co., Ltd.
    Inventors: Byeong Jo Kim, Rak Jun Choi, Hyun Jee Oh
  • Patent number: 10886436
    Abstract: A light-emitting device may include a light-emitting structure, a first electrode formed on the first conductive semiconductor layer, and a second electrode formed on the second conductive semiconductor layer. The first electrode may include a first pad, and a first branch coupled to the first pad and extending in a longitudinal direction. The second electrode may include a second pad, and a third branch and a fourth branch that are connected to the second pad and extend from the second pad.
    Type: Grant
    Filed: May 16, 2011
    Date of Patent: January 5, 2021
    Assignee: LG INNOTEK CO., LTD.
    Inventors: MinGyu Na, SungKyoon Kim, SungHo Choo, WooSik Lim
  • Patent number: 10886445
    Abstract: Vertical solid-state transducers (“SSTs”) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.
    Type: Grant
    Filed: June 20, 2019
    Date of Patent: January 5, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Vladimir Odnoblyudov, Martin F. Schubert
  • Patent number: 10874346
    Abstract: Hat, helmet, and other headgear apparatus includes dry electrophysiological electrodes and, optionally, other physiological and/or environmental sensors to measure signals such as ECG from the head of a subject. Methods of use of such apparatus to provide fitness, health, or other measured or derived, estimated, or predicted metrics are also disclosed.
    Type: Grant
    Filed: May 28, 2019
    Date of Patent: December 29, 2020
    Assignee: Orbital Research Inc.
    Inventors: Frederick J. Lisy, Anthony Opperman, David D. Dashevsky
  • Patent number: 10879419
    Abstract: A light emitting device including a first light emitting part including a first n-type semiconductor layer, and a first mesa structure including a first active layer, a first p-type semiconductor layer, and a first transparent electrode vertically stacked one over another and exposing a portion of a first surface the first n-type semiconductor layer, a second light emitting part disposed on the exposed portion of the first n-type semiconductor layer and spaced apart from the first mesa structure, and including a second n-type semiconductor layer, a second active layer, a second p-type semiconductor layer, and a second transparent electrode, and a first bonding part bonding and electrically coupling the first n-type semiconductor layer and the second n-type semiconductor layer to each other.
    Type: Grant
    Filed: August 9, 2019
    Date of Patent: December 29, 2020
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Jong Min Jang, Chang Yeon Kim, Myoung Hak Yang
  • Patent number: 10879340
    Abstract: A tiling display device includes a plurality of display modules arranged on one plane. The display module includes a substrate, a signal line, an open hole, a filling layer, and a circuit board. The substrate has a display area in which subpixels are defined. The signal line is positioned on the top surface of the substrate within the display area to deliver a predetermined signal to the subpixels. The open hole is provided to penetrate the substrate within the display area. The filling layer fills the open hole. The circuit board is positioned on the back surface of the substrate and electrically connected to the signal line through the filling layer.
    Type: Grant
    Filed: August 27, 2019
    Date of Patent: December 29, 2020
    Assignee: LG Display Co., Ltd.
    Inventors: Seungjae Lee, Jungwoo Ha, Yoowhan Kim
  • Patent number: 10879424
    Abstract: A radiation-emitting semiconductor chip includes a substrate; an epitaxial semiconductor layer sequence having an active zone that generates electromagnetic radiation of a first wavelength range, wherein the substrate is transparent to electromagnetic radiation of the active zone; and an optically active layer arranged on a side surface of the substrate and on a rear main surface of the semiconductor chip, which lies opposite to a radiation exit surface of the semiconductor chip.
    Type: Grant
    Filed: November 10, 2016
    Date of Patent: December 29, 2020
    Assignee: OSRAM OLED GmbH
    Inventors: Fabian Kopp, Attila Molnar, Cheng Kooi Tan
  • Patent number: 10861403
    Abstract: According to one embodiment, a display device includes a pair of substrates including a display area in which pixels are arranged, pixel electrodes and memories provided in the pixels, signal lines supplied with digital signals, switching elements connecting the memories and the signal lines, scanning lines supplied with scanning signals, a first driver unit, and a second driver unit. The first driver unit is provided in a peripheral area around the display area, and supplies the digital signal to the signal line. The second driver unit is provided in the peripheral area, and supplies the scanning signal to the scanning line. In the display device, at least a part of the first driver unit is provided between the display area and the second driver unit.
    Type: Grant
    Filed: October 17, 2019
    Date of Patent: December 8, 2020
    Assignee: Japan Display Inc.
    Inventor: Takehiro Shima
  • Patent number: 10854784
    Abstract: A method for producing an electrical contact on a semiconductor layer and a semiconductor component having an electrical contact are disclosed. In an embodiment a method includes providing a semiconductor layer, forming a plurality of contact rods on the semiconductor layer, wherein the contact rods are formed by a first material and a second material, wherein the first material is applied to the semiconductor layer and the second material is applied to the first material, and wherein a lateral structure of the first material is self-organized, forming a filling layer on the contact rods and in intermediate spaces between the contact rods and exposing the contact rods.
    Type: Grant
    Filed: September 26, 2017
    Date of Patent: December 1, 2020
    Assignee: OSRAM OLED GMBH
    Inventors: Martin Rudolf Behringer, Brendan Holland, Jana Sommerfeld, Sabine vom Dorp
  • Patent number: 10847728
    Abstract: This invention discloses iridium complexes with ligands based on a phenyl quinoline backbone with at least a double substitution on the quinoline moiety. These complexes can be used as phosphorescent emitters in OLEDs.
    Type: Grant
    Filed: September 26, 2016
    Date of Patent: November 24, 2020
    Assignee: UNIVERSAL DISPLAY CORPORATION
    Inventors: Pierre-Luc T. Boudreault, Chuanjun Xia, Harvey Wendt
  • Patent number: 10847642
    Abstract: Disclosed is a compound semiconductor device that includes an electron transit layer; an electron supply layer disposed above the electron transit layer, and including a first region and a second region, the second region having a composition higher in Al than the first region and covering the first region from at least a bottom part of the second region; a first electrode disposed above the first region; and a second electrode disposed above the second region.
    Type: Grant
    Filed: June 21, 2018
    Date of Patent: November 24, 2020
    Assignee: FUJITSU LIMITED
    Inventors: Tetsuro Ishiguro, Junji Kotani, Norikazu Nakamura
  • Patent number: 10845527
    Abstract: A light emitting module includes: a light emitting element unit including: a light-emitting element that has a main-light-emission surface, an electrode-formation surface and a side-surface, a light-transmissive member that covers the main-light-emission surface, and a first light-reflection member that covers the side-surface; a light-transmissive light guide plate including a first main-surface as a light emission surface, and a second main-surface opposed to the first main-surface and has a recess accommodating the light emitting element unit so that the first light-reflection member is partially arranged out of the recess in a cross-section; a light-transmissive interposition member that contacts an interior side-surface of the recess and an exterior side-surface of the light emitting element unit; and a second light-reflection member that partially covers the second main-surface and the interposition member.
    Type: Grant
    Filed: December 28, 2019
    Date of Patent: November 24, 2020
    Assignee: NICHIA CORPORATION
    Inventor: Daisuke Kasai