Abstract: A method for making a device. The method comprises forming a buffer layer on a substrate; forming a periodically doped layer on the buffer layer; forming one or more wires on the periodically doped layer, the wires being chosen from nanowires and microwires; and introducing porosity into the periodically doped layer to form a porous distributed Bragg reflector (DBR). Various devices that can be made by the method are also disclosed.

Abstract: Provided is a display apparatus including a circuit substrate, a light-emitting layer, a polarizing layer, a quarter waveplate, and a bandpass polarizing reflective layer. The light-emitting layer includes a plurality of first light-emitting structures. The first light-emitting structures have a first peak emission wavelength. The polarizing layer is located on a side of the light-emitting layer away from the circuit substrate. The quarter waveplate is disposed between the polarizing layer and the light-emitting layer and overlaps the light-emitting layer and the polarizing layer. The bandpass polarizing reflective layer is disposed between the quarter waveplate and the light-emitting layer and includes a first bandpass polarizing reflective pattern overlapping the first light-emitting structures. A reflectance of the bandpass polarizing reflective pattern for light with a wavelength in a first wavelength range is greater than 20%. The first wavelength range is the peak emission wavelength ±10 nm.

Abstract: A light-emitting diode package structure includes a heat dissipation substrate, a redistribution layer, and multiple light-emitting diodes. The heat dissipation substrate includes multiple copper blocks and a heat-conducting material layer. The copper blocks penetrate the heat-conducting material layer. The redistribution layer is disposed on the heat dissipation substrate and electrically connected to the copper blocks. The light-emitting diodes are disposed on the redistribution layer and are electrically connected to the redistribution layer. A side of the light-emitting diodes away from the redistribution layer is not in contact with any component.

Abstract: Provided in the present specification are a substrate structure having an exclusive design for allowing assembly on a substrate, at the same time, of a plurality of semiconductor light emitting devices having various colors, and a new type of semiconductor light emitting device, such that the semiconductor light emitting devices can be quickly and accurately assembled on the substrate with a concern about color mixing. Here, at least one of the plurality of semiconductor light emitting devices, according to one embodiment of the present invention, comprises a bump part located in the lateral direction of a surface to be assembled. An assembly groove in which the semiconductor light emitting device including the bump part is assembled is provided with a protrusion part facing toward the inside of the assembly groove.

Abstract: A display panel includes: a window including a display area, and a non-display area adjacent to the display area; a color filter layer on the window; a circuit element layer including: a low refractive index layer covering the color filter layer; and a transistor on the low refractive index layer; a light control layer including: division partition walls on the circuit element layer; and a light control pattern between the division partition walls, and including quantum dots; and a display element layer on the light control layer, and including: a first electrode; a second electrode on the first electrode; and an emission layer between the first electrode and the second electrode and to generate light. The light passes through the light control layer, the circuit element layer, and the color filter layer to be transmitted to the window.

Abstract: A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.

Abstract: A display panel is provided, including a grounding signal wiring, driving chips, a driving chip input output signal wiring, and a power line. A grounding signal pin is connected to the grounding signal wiring. The driving chip input output signal wiring is configured to connect a stage-transfer signal input pin and a stage-transfer signal output pin of two adjacent driving chips. The grounding signal wiring, the driving chip input output signal wiring, and the power line are disposed in a same layer and do not intersect with each other.

Abstract: A display device in which a peripheral circuit portion has high operation stability is provided. The display device includes a first substrate and a second substrate. A first insulating layer is provided over a first surface of the first substrate. A second insulating layer is provided over a first surface of the second substrate. The first surface of the first substrate and the first surface of the second substrate face each other. An adhesive layer is provided between the first insulating layer and the second insulating layer. A protective film in contact with the first substrate, the first insulating layer, the adhesive layer, the second insulating layer, and the second substrate is formed in the vicinity of a peripheral portion of the first substrate and the second substrate.

Abstract: The present disclosure relates to a device used in conjunction with night vision equipment. The device including an LED light source optically coupled and/or radiationally connected to a phosphor material including a green-emitting phosphor and a red-emitting phosphor of formula I: AxMFy:Mn4+??I wherein A is Li, Na, K, Rb, Cs, or a combination thereof, M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof, x is an absolute value of a charge of the MFy ion; and y is 5, 6 or 7. The device limits emission of wavelengths longer than 650 nm to less than 1.75% of total emission. A device including an LED light source optically coupled and/or radiationally connected to a red-emitting phosphor including Na2SiF6:Mn4+ is also provided.

Abstract: Embodiments disclose a display device including a display panel including a first display region having a plurality of first pixels, and a second display region having a plurality of second pixels and a plurality of light-transmitting regions, a plurality of data lines through which data signals of the plurality of first pixels and the plurality of second pixels are output, a plurality of gate lines through which gate signals of the plurality of first pixels and the plurality of second pixels are output, and a gate driving unit including a plurality of stages configured to output the gate signals to the plurality of gate lines and a dummy stage connected in parallel to at least one of the plurality of stages.

Abstract: The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface.

Abstract: A display panel includes a substrate, a plurality of conductive components on a surface of the substrate, a plurality of light-emitting diodes. The conductive components are on a surface of the substrate and spaced apart from each other. Each conductive component includes a first conductive part and a second conductive part. The second conductive part is electrically connected to the first conductive part. A projection of the second conductive part on the surface at least partially overlaps a projection of the first conductive part on the surface. Each light-emitting diode includes a binding electrode, and the binding electrode is electrically connected to the second conductive part. The first conductive part is made of metal; the second conductive part is made of a transparent conductive oxide. The binding electrode is made of metal. A eutectic material is formed between the second conductive part and the binding electrode.

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.

Abstract: A micro light emitting diode (LED) having a high light extraction efficiency includes a bottom conductive layer, a light emitting layer on the bottom conductive layer, and a top conductive structure on the light emitting layer. The micro LED additionally includes a conductive side arm electrically connecting the sidewall of the light emitting layer with the bottom conductive layer, and a reflective bottom dielectric layer arranged under the light emitting layer and above the bottom conductive layer. In some embodiments, the micro LED further includes an ohmic contact between the top conductive structure and the light emitting layer that has a small area and is transparent, thereby increasing the light emergent area and improving the light extraction efficiency.

Abstract: The present disclosure provides a method for detecting resistance of a side trace of a display substrate and the display substrate, and belongs to the field of display technology. In the method for detecting resistance of a side trace of a display substrate, the display substrate includes: a base substrate including a first surface and a second surface opposite to each other; a plurality of first pads at intervals on the first surface; and a plurality of second pads at intervals on the second surface; the first pad is electrically connected to a corresponding second pad through a side trace; the method includes forming at least one detection unit; wherein forming the detection unit includes: connecting two first pads through a connection part; and detecting two second pads in the detection unit, and obtaining resistance of the detection unit to obtain the resistance of the side trace.

Abstract: A phosphor composition includes an activated uranium-based phosphor having formula I or II. The phosphor is doped with Eu3+ [Ba1?a?bSraCab]x[Mg,Zn]y(UO2)z([P,V]O4)2(x+y+z)/3??(I) [Ba1?a?bSraCab]p(UO2)q[P,V]rO(2p+2q+5r)/2??(II) where 0?a?1, 0?b?1, 0.75?x?1.25, 0.75?y?1.25, 0.75?z?1.25, 2.5?p?3.5, 1.75?q?2.25, and 3.5?r?4.5 and formula II excludes the combination where a is 0, b is 0, p is 3.5, q is 1.75, and r is 3.5. Phosphor compositions further including formula VI or other luminescent materials, such as quantum dots, devices and displays are also provided.

Abstract: A light emitting substrate and a display device are provided, the light emitting substrate includes: a base substrate: an electrode planarization layer, on the base substrate: an electrode layer, at a side of the electrode planarization layer away from the base substrate, the electrode layer includes a first electrode and a second electrode, the first electrode includes at least one first electrode strip, the second electrode includes at least one second electrode strip, the first electrode strip and the second electrode strip are spaced and alternately arranged in a first direction, each of the at least one first electrode strip and each of the at least one second electrode strip extend along a second direction, the electrode planarization layer includes a first groove between a first electrode strip and a second electrode strip which are adjacent to each other, the first groove is configured to accommodate a light emitting diode.

Abstract: An LED module includes a first protrusion and a second protrusion adjacent to the first protrusion arranged on an insulating surface, a first electrode arranged on the first protrusion, and a second electrode arranged on the second protrusion, and an LED chip arranged on upper sides of the first protrusion and the second protrusion. The LED chip is connected to the first electrode and the second electrode via conductive members, and the first protrusion and the second protrusion are insulative and have a height of 1 ?m to 50 ?m.

Abstract: A head-mounted augmented reality stereo vision optical film, including a light transmitting display layer, an optical projection layer, and an eye tracking layer, is provided. The light transmitting display layer has multiple pixel units. The optical projection layer has multiple light guide units. The light guide unit includes a pinhole configured corresponding to at least one of the pixel units. The eye tracking layer has multiple micro sensing elements.

Abstract: A display device includes a display panel and an optical sensing module. The display panel includes a pixel region having a plurality of pixels and including a first area and a second area, wherein the second area is greater than the first area in a transmittance. The optical sensing module is disposed corresponding to the second area of the pixel region of the display panel and has an aperture able to accept lights through the second area. The second area has a coverage with a width of not less than 0.43 millimeters. The aperture has a width, and the width of the aperture is less than the width of the coverage of the second area.

Abstract: A display device includes a first electrode, a second electrode, and a third electrode extending in one direction on a substrate and being spaced from one another, a first light-emitting element between the first electrode and the second electrode, and a second light-emitting element between the second electrode and the third electrode, a first connection electrode on the first electrode and in contact with a first end of the first light-emitting element, a second connection electrode on one side of the second electrode and in contact with a first end of the second light-emitting element, a third connection electrode on an opposite side of the second electrode and in contact with a second end of the first light-emitting element, and a fourth connection electrode on the third electrode and in contact with a second end of the second light-emitting element.

Abstract: An electronic device includes a display panel including a base layer, and an element layer disposed on the base layer, the element layer including pixels outputting a first light, and light receiving sensors, an input device providing a second light to the display panel, and a control module controlling operations of the display panel and the input device. The light receiving sensors detect the second light provided from the input device and generate a detection signal. The control module calculates biometric information of a user based on the detection signal.

Abstract: The invention relates to an optoelectronic semiconductor chip comprising a semiconductor layer sequence with a first semiconductor layer, a second semiconductor layer and an active layer between the first and the second semiconductor layers. The optoelectronic semiconductor chip further comprises a first contact structure with a plurality of first contact pins and a first contact layer for electrically contacting the first semiconductor layer and a second contact structure for electrically contacting the second semiconductor layer. The first semiconductor layer is disposed between the first contact layer and the active layer. The first contact pins are disposed between the first contact layer and the first semiconductor layer and are separated and spaced at a distance from one another in the lateral direction. An electrical connection with an electrical resistance between the first contact layer and the first semiconductor layer is formed by each first contact pin.

Abstract: Light emitting diode (LED) constructions comprise an LED having a pair of electrical contacts along a bottom surface. A lens is disposed over the LED and covers a portion of the LED bottom surface. A pair of electrical terminals is connected with respective LED contacts, are sized larger than the contacts, and connect with the lens material along the LED bottom surface. A wavelength converting material may be interposed between the LED and the lens. LED constructions may comprise a number of LEDs, where the light emitted by each LED differs from one another by about 2.5 nm or less. LED constructions are made by attaching 2 or more LEDs to a common wafer by adhesive layer, forming a lens on a wafer level over each LED to provide a rigid structure, removing the common wafer, forming the electrical contacts on a wafer level, and then separating the LEDs.

Abstract: A light-emitting diode (LED) includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and includes a first electrode pad, a second electrode pad and a third electrode pad disposed on the second semiconductor layer in a direction from a corner of the second semiconductor layer to an opposite corner of the second semiconductor layer. An LED includes a first electrode pad disposed at a center of the LED and in contact with a P-type semiconductor layer and a second electrode pad in contact with an N-type semiconductor layer, wherein the second electrode pad is disposed a maximum distance away from the first electrode pad on the same surface.

Abstract: A semiconductor device is provided and includes a first substrate including a first transistor; a laser reflection layer on the first transistor; and a second substrate on the laser reflection layer, the second substrate including a second transistor.

Abstract: A semiconductor device is provided, which includes an active structure, a first semiconductor layer, a second semiconductor layer, an intermediate layer, a transition layer and a contact layer. The active structure has two sides and includes an active region. The first semiconductor layer and the second semiconductor layer respectively located on the two sides of the active structure. The intermediate layer is located between the second semiconductor layer and the active structure. The transition layer is located on the second semiconductor layer. The contact layer is located on the transition layer.

Abstract: A semiconductor light emitting device package includes a circuit board with an upper pad, a light emitting diode chip on the circuit board and having a first surface facing the circuit board and a second surface opposing the first surface, and the light emitting diode chip including a substrate, a semiconductor stack structure on the substrate that emits ultraviolet light, and electrodes connected to the semiconductor stack structure, connection bumps between the circuit board and the light emitting diode chip, the connection bumps connecting the upper pad and the electrodes, an underfill resin on the upper pad of the circuit board and covering at least a portion of a side surface of the light emitting diode chip, and a passivation layer on the light emitting diode chip and the underfill resin, the passivation layer covering the underfill resin and being spaced apart from the semiconductor stack structure.

Abstract: A semiconductor light emitting device is provided. The device includes a light emitting structure stack including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; and a field control structure on a sidewall of the light emitting structure stack, the field control structure including a field control electrode on a sidewall of the active layer; and a dielectric layer between the field control electrode and the active layer.

Abstract: A method of manufacturing a light-emitting device includes providing a structure body including a silicon substrate having a first portion, a second portion, and a third portion between the first portion and the second portion, and a first semiconductor layered body including a first light-emitting layer, the first semiconductor layered body being disposed on or above the silicon substrate. The method includes forming a first resin layer covering a lateral side of the silicon substrate and a lateral side of the first semiconductor layered body. The method includes a removal step of removing the first portion to expose a first surface of the first semiconductor layered body, removing the second portion to expose a second surface of the first semiconductor layered body, and leaving the third portion. The method includes forming a first wavelength conversion member on or above the first surface exposed by the removal of the first portion.

Abstract: Methods for fabricating ultraviolet laser diode devices include providing substrate members comprising gallium and nitrogen or aluminum and nitrogen, forming an epitaxial material overlying a surface region of the substrate members, patterning the epitaxial material to form epitaxial mesa regions, depositing a bond media on at least one of the epitaxial mesa regions, bonding the bond media on at least one of the epitaxial mesa regions to a handle substrate, subjecting the sacrificial layer to an energy source to initiate release of the substrate member and transfer the at least one of the epitaxial mesa regions to the handle substrate, and processing the at least one of the epitaxial mesa regions to form the ultraviolet laser diode device.

Abstract: A LED structure includes a substrate, a first semiconductor layer, a second semiconductor layer, and a color conversion layer. The first semiconductor layer is formed on the substrate, and the first semiconductor layer includes a first LED unit and a second LED unit formed therein. The first LED unit and the second LED unit emit light of a first color. The second semiconductor layer is formed above the first semiconductor layer, and the second semiconductor layer includes a third LED unit formed therein. The third LED unit emits light of a second color different from the first color. The color conversion layer is formed on the first LED unit to convert light of the first color to light of a third color different from the first color and the second color.

Abstract: A light emitting device includes a substrate, and a stacked body provided to the substrate, and including a plurality of first columnar parts, wherein the stacked body includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer and the light emitting layer constitute the first columnar parts, the first semiconductor layer is disposed between the substrate and the light emitting layer, the second semiconductor layer is provided with a plurality of recessed parts, the recessed part is provided with a low refractive-index part lower in refractive index than the second semiconductor layer, a plurality of the first columnar parts constitutes a first photonic crystal, the second semiconductor layer and the low refractive-index parts constitute a second photonic crystal, and the first photonic crystal and

Abstract: A light emitting diode, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; an ohmic contact layer disposed on the second type semiconductor layer; a first insulating layer disposed on the semiconductor structure and including a first opening overlapping the first type semiconductor layer and a second opening overlapping the ohmic contact layer; a first connection wiring disposed on the first insulating layer, the first connection wiring having a first portion and a second portion; and a second connection wiring disposed on the first insulating layer and spaced apart from the first connection wiring, the second connection wiring electrically connected to the second type semiconductor layer through the second opening. The second connection wiring surrounds at least a portion of the first portion of the first connection wiring in a plan view.

Abstract: A semiconductor light emitting diode (LED) and a method of manufacturing the same are provided. The LED includes a first semiconductor layer; a plurality of active elements spaced apart on the first semiconductor layer and each having a width less than a width of the first semiconductor layer; and a second semiconductor layer disposed on the plurality of active elements.

Abstract: A phosphor substrate having at least one light emitting element mounted on one surface, and includes an insulating substrate, at least one pair of electrode pair which is disposed on one surface of the insulating substrate and bonded to the light emitting element, and a phosphor layer which is disposed on one surface of the insulating substrate and includes a phosphor in which a light emission peak wavelength, in a case where light emitted by the light emitting element is used as excitation light, is in a visible light region.

Abstract: A display panel includes: a substrate including a first region, a second region, and a third region between the first region and the second region; a display element located in the second region and including a pixel electrode, an opposite electrode, an intermediate layer; a multi-layered film arranged between the substrate and the pixel electrode and including an organic insulating layer and an inorganic layer on the organic insulating layer; and at least one groove formed in the multi-layered film and located in the third region, wherein at least one organic material layer is included in the intermediate layer and is disconnected by the at least one groove.

Abstract: A stretchable display panel, a control method of the stretchable display panel, and a display device are provided. The stretchable display panel includes a stretchable substrate and a plurality of display units. The stretchable substrate contains a plurality of hollows, and a display unit is disposed corresponding to a hollow. The plurality of display units include a first display unit and a second display unit. In a stretched state, both the first display unit and the second display unit are disposed on a side of the stretchable substrate facing a light-exiting surface. In a first contracted state or a second contracted state, one of the first display unit and the second display unit is disposed on the side of the stretchable substrate facing the light-exiting surface, and the other one is disposed on a side of the stretchable substrate away from the light-exiting surface.

Abstract: A laser-based light source (10), comprising: at least one first arrangement (100), for generating light (500), comprising: a laser device (200) for generating laser light (510) of a predetermined laser wavelength and emitting this laser light as a laser beam; and a light-conversion device (210) for converting at least part of the laser light into converted light (520); a second arrangement (110)), for generating at least a first signal (300) and a second signal (310), representative for a different part of the spectrum of said light, from direct measurements on a portion of said light (500); and a controller (120) for receiving the first signal and the second signal, for determining a safe-to-operate parameter, based on the first signal and the second signal, and for controlling the operation of the laser-device based on a comparison between the safe-to-operate parameter and at least one predefined threshold.

Abstract: A light emitting display device includes a light emitting element including a pixel electrode, a common electrode, and a light emitting layer interposed between the pixel electrode and the common electrode, and a pixel circuit electrically connected to the pixel electrode of the light emitting element, wherein the pixel electrode may include a first pixel electrode portion, a second pixel electrode portion spaced apart from the first pixel electrode portion, a circuit contact portion connected to the pixel circuit, a first electrode connection portion connected or disconnected between the first pixel electrode portion and the circuit contact portion, and a second electrode connection portion connected or disconnected between the second pixel electrode portion and the circuit contact portion.

Abstract: In at least one embodiment, the optoelectronic semiconductor chip comprises a semiconducting recombination layer for generating electromagnetic radiation by charge carrier recombination, a plurality of first contact elements on a first side of the recombination layer, at least one second contact element on the first side of the recombination layer, a plurality of semiconducting first connection regions, and at least one semiconducting second connection region. Each of the first connection regions is arranged between a first contact element and the first side of the recombination layer. The second connection region is arranged between the second contact element and the first side of the recombination layer. The first connection regions comprise a first type of doping and the second connection region comprises a second type of doping complementary to the first type of doping. The first contact elements are individually and independently electrically contactable.

Abstract: The wavelength conversion material includes a general formula (I) MmAaBbCcDdEe:ESxREy and satisfies a condition (II) that a proportion of D for the wavelength conversion material greater than or equal to 50%. M is selected from a group consisting of Ca, Sr and Ba. A is selected from a group consisting of elements Mg, Mn, Zn and Cd. B is selected from a group consisting of elements B, Al, Ga and In. C is selected from a group consisting of Si, Ge, Ti and Hf. D is selected from a group consisting of elements 0, S and Se. E is selected from a group consisting of elements N and P. ES is selected from a group consisting of divalent Eu, Sm and Yb. RE is selected from a group consisting of trivalent Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Tm.

Abstract: Methods and devices are presented for transforming a layout of a densely packed grid of micro-LED light emitters to a layout of a square rectilinear pixel grid to achieve compatibility with hardware and software used in imaging and display technologies. In particular, a pattern of regular hexagonal emitter cells for fabrication on a III-nitride substrate can be transformed to a square pixel array of irregular hexagonal trichrome pixels that are readily addressable. Separation between adjacent trichrome pixels, and between their constituent emitters, can be established for overlay tolerance, while maintaining a cell packing density of about 70% and a pixel pitch of about 4.0 ?m. Wavelength and quantum efficiency properties are shown to depend on optical current density, which can be determined by the emitter area specified in the grid layout.

Abstract: A light emitting element comprising a layered structure configured by layering a first light reflecting layer 41 configured by layering a plurality of thin films, a light emitting structure 20, and a second light reflecting layer 42 configured by layering a plurality of thin films, wherein the light emitting structure 20 is configured by layering, from the first light reflecting layer side, a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22, a second electrode 32 and an intermediate layer 70 are formed between the second compound semiconductor layer 22 and the second light reflecting layer 42 from the second compound semiconductor layer side, and the value of a surface roughness of a second surface 72 of the intermediate layer 70 in contact with the second light reflecting layer 42 is less than the value of a surface roughness of a first surface 71 of the intermediate layer 70 facing the second electrode 32.

Abstract: In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area and a second contact finger structure connected to the second contact area, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another, and wherein edge regions of the insulation layer includes more openings than a central region of the insulation layer.

Abstract: A display panel and a manufacturing method thereof are disclosed. The display panel includes a substrate, a light extraction structure, and a thin film transistor array layer. The light extraction structure includes a plurality of light emitting diode (LED) chips, a first light extraction portion, a second light extraction portion, and a first metal layer. The second light extraction portion covers the first light extraction portion and the LED chips. Light achieves total reflection after passing through the first light extraction portion and the second light extraction portion and then irradiating a sidewall of the first metal layer, improving the light exit efficiency at a front viewing angle.

Abstract: A display device can include multiple layers, and a capacitor on the multiple layers. The capacitor can include one capacitor electrode and the other capacitor electrode, in which the one capacitor electrode is on a layer where a first gate electrode of a first thin film transistor is disposed on, and an electrode disposed on a layer where the other capacitor electrode is disposed on and made of same material with the other capacitor electrode overlaps a second thin film transistor. The display device can further include a first planarization layer and a second planarization layer on the first thin film transistor and the second thin film transistor, and a source electrode of the first thin film transistor between the first and second planarization layers.

Abstract: A method for manufacturing a light-emitting element, includes: introducing a gas comprising gallium, an ammonia gas, and a gas comprising a p-type impurity to a reactor and forming a first p-type nitride semiconductor layer on a first light-emitting layer in a state in which the reactor has been heated to a first temperature; introducing an ammonia gas at a first flow rate and a nitrogen gas to the reactor in a state in which the reactor is held at the first temperature; and subsequently introducing a gas comprising gallium, an ammonia gas at a second flow rate, and a gas comprising an n-type impurity to the reactor, and forming a second n-type nitride semiconductor layer on the first p-type nitride semiconductor layer. The first flow rate is less than the second flow rate.

Abstract: A micro-LED display has an array of separately controllable micro-LEDs and corresponding pixel drivers. The pixel drivers have pulse-width modulation (PWM) generator circuits for the LEDs. The PWM generator circuits include the following. N input nodes are coupled to receive N control bits that determine a brightness of the LEDs. An output node is coupled to output the drive signal to the LEDs. Each of N transistors are connected between one of the input nodes and the output node. Each transistor is controlled by a clock signal CKn and couples the input node to the output node as controlled by the clock signal CKn.

Abstract: A display device comprises a planarization layer disposed on a substrate, a first alignment electrode and a second alignment electrode that extend in a first direction and are spaced apart from each other on the planarization layer, a first insulating layer disposed on the first alignment electrode and the second alignment electrode and comprising a first opening exposing the planarization layer between the first alignment electrode and the second alignment electrode, a light-emitting element disposed on the planarization layer overlapping the first opening, a first contact electrode and a second contact electrode disposed on the first insulating layer, the first contact electrode electrically contacting a first end of the light-emitting element and the second contact electrode electrically contacting a second end of the light-emitting element, and a second insulating layer disposed on the light-emitting element.