Abstract: A method of manufacturing a nitride semiconductor device includes: forming a first semiconductor layer containing Al, Ga, and N and having a first thickness by doping a p-type impurity; forming a second semiconductor layer over the first semiconductor layer without doping an n-type impurity and without doping a p-type impurity, the second semiconductor layer containing Al and N and having a second thickness; and heat treating the first semiconductor layer and the second semiconductor layer. The second thickness is less than the first thickness. T band gap energy of the second semiconductor layer is greater than a band gap energy of the first semiconductor layer. After the heat treating of the first semiconductor layer and the second semiconductor layer, the second semiconductor layer contains the p-type impurity by diffusion of the p-type impurity from the first semiconductor layer.

Abstract: A sealing method includes dispensing an adhesive on an edge surface of a first part, performing a first activation for hardening the adhesive to a predetermined hardness, performing a second activation for triggering appearance of adhesion strength of the adhesive, assembling the first part and a second part, and pressing the first part and the second part against each other.

Abstract: Various embodiments of solid state transducer (“SST”) devices are disclosed. In several embodiments, a light emitter device includes a metal-oxide-semiconductor (MOS) capacitor, an active region operably coupled to the MOS capacitor, and a bulk semiconductor material operably coupled to the active region. The active region can include at least one quantum well configured to store first charge carriers under a first bias. The bulk semiconductor material is arranged to provide second charge carriers to the active region under the second bias such that the active region emits UV light.

Abstract: A display device includes: a substrate; a first conductive layer on the substrate and comprising a first signal line; an insulating layer pattern on the first conductive layer; a semiconductor pattern on the insulating layer pattern; a gate insulating layer on the semiconductor pattern; and a second conductive layer comprising a gate electrode on the gate insulting layer and a first source/drain electrode and a second source/drain electrode, each on at least a part of the semiconductor pattern, wherein the insulating layer pattern and the semiconductor pattern have a same planar shape, the semiconductor pattern comprises a channel region overlapping the gate electrode, a first source/drain region on a first side of the channel region and a second source/drain region on a second side of the channel region, and the first source/drain electrode electrically connects the first source/drain region and the first signal line.

Abstract: A manufacturing method of a display device includes providing a first organic layer in a display area and a non-display area, to cover a pixel electrode and a pad electrode, respectively, providing a first electrode of a light emitting element, in the display area, the first organic layer being between the pixel electrode and the first electrode, after forming the first electrode, removing a portion of the first organic layer which is in the non-display area, to expose the pad electrode from the first organic layer; and providing a light emitting layer of the light emitting element, corresponding to the first electrode.

Abstract: An organic light emitting device (OLED) that includes an anode, a cathode, and an organic layer disposed between the anode and the cathode. The organic layer includes a metal compound that comprises a ligand LA of Formula I, wherein the dashed lines represent coordination to a metal M. The metal M is selected from the groups consisting of Os, Ru, Ir, Rh, Pt, Pd, and Cu, and the metal is further coordinated to one or more ligand(s) LB, wherein the ligand(s) LB can be the same or different if more than one ligand LB is present. Optionally one or two of the ligand(s) LB can independently link to the ligand LA through one of R1 to R5. The invention is also directed to a consumer product that includes an OLED, and the OLED includes an organic layer that includes a metal compound that comprises a ligand LA of Formula I.

Abstract: A method for manufacturing an electronic device includes transferring a plurality of light emitting units from a carrier substrate to an object substrate through steps of: picking the plurality of light emitting units from the carrier substrate by a pick-and-place tool, and placing the plurality of light emitting units onto the object substrate. The steps are both performed under a protection by at least one electrostatic discharge protective unit.

Abstract: Disclosed are a pixel circuit and a driving method thereof, an array substrate and a display apparatus. The pixel circuit includes a pixel sub-circuit. The pixel sub-circuit includes a first adjusting circuit and a second adjusting circuit. The first adjusting circuit is configured to receive a first data signal and a light emitting control signal to control a magnitude of a driving current used for driving a light emitting element to emit light; the second adjusting circuit is configured to receive a second data signal and a time control signal to control a time duration in which the driving current is applied to the light emitting element; and the time control signal changes within a time period during which the light emitting control signal allows the driving current to be generated.

Abstract: A light-emitting device includes: a substrate; a unit light-emitting area disposed on the substrate; first and second electrodes disposed in the unit light-emitting area to be separated from each other; a plurality of rod-shaped LEDs disposed between the first and second electrodes; a reflective contact electrode disposed on opposite ends of the rod-shaped LEDs to electrically connect the rod-shaped LEDs to the first and second electrodes; and a light-transmitting structure disposed between the first and second electrodes and extending to cross the rod-shaped LEDs.

Abstract: An array substrate, a display panel, and a method of fabricating an array substrate are provided. The array substrate includes a display region and a non-display region. The array substrate further includes a substrate, a first transparent layer disposed on the substrate corresponding to the display region, an interlayer insulating layer disposed on the substrate, and a second transparent layer disposed on the interlayer insulating layer.

Abstract: A transfer-printable (e.g., micro-transfer-printable) device source wafer comprises a growth substrate comprising a growth material, a plurality of device structures comprising one or more device materials different from the growth material, the device structures disposed on and laterally spaced apart over the growth substrate, each device structure comprising a device, and a patterned dissociation interface disposed between each device structure of the plurality of device structures and the growth substrate. The growth material is more transparent to a desired frequency of electromagnetic radiation than at least one of the one or more device materials. The patterned dissociation interface has one or more areas of relatively greater adhesion each defining an anchor between the growth substrate and a device structure of the plurality of device structures and one or more dissociated areas of relatively lesser adhesion between the growth substrate and the device structure of the plurality of device structures.

Abstract: An optoelectronic component is specified comprising a semiconductor body comprising a first semiconductor layer sequence and a second semiconductor layer sequence which are arranged on top of one another in a stacking direction, wherein the first semiconductor layer sequence has a first active region, which generates electromagnetic primary radiation with a first peak wavelength the second semiconductor layer sequence comprises a second active region, which has a section configured to partially absorb electromagnetic primary radiation and to re-emit electromagnetic secondary radiation having a second peak wavelength, and the first peak wavelength is in a red wavelength range and the second peak wavelength is in an infrared wavelength range, or the first peak wavelength is smaller than the second peak wavelength by at most 100 nanometers.

Abstract: A display apparatus includes a display panel having an image acquisition region within a display area, and an image acquisition device over a side of the display panel opposing to its display surface. The image acquisition device is at a position corresponding to the image acquisition region, and is configured to capture an image based on lights from an outside pattern over a side of the display panel proximal to the display surface. The display panel includes a substrate and a plurality of light-emitting elements over the substrate. The plurality of light-emitting elements comprises one or more first light-emitting elements positionally within the image acquisition region. At least one first light-emitting element includes a non-transparent electrode provided with at least one through-hole configured to allow the lights from the outside pattern to pass through the display panel.

Abstract: A display device includes a flexible substrate including a first surface and a second surface facing the first surface; a TFT array layer provided on the first surface; a display element layer provided on the TFT array layer; a first heat releasing layer provided on the second surface; a first protective layer provided on the same side as the second surface; a second heat releasing layer provided on the display element layer; and a second protective layer provided on the display element layer. The second heat releasing layer has a light transmittance of 90% or higher.

Abstract: Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

Abstract: Provided are a heterocyclic compound and an organic light-emitting device including the same. The heterocyclic compound includes a fluoro-containing cyclic group. The heterocyclic compound does not include a carbazole group, a dibenzofuran group, a dibenzothiophene group, and/or a triphenylene group. The organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode and including an organic layer, the organic layer including an emission layer and at least one of the heterocyclic compound.

Abstract: A display device that includes a plurality of pixels arranged in a row direction and a column direction crossing the row direction. The display device includes a first substrate including light-emitting elements each disposed in the respective pixels. A second substrate faces the first substrate. A plurality of optical patterns are disposed on the second substrate in pixel columns, respectively, and extend along the column direction. Light-blocking patterns are disposed on the second substrate. The light-blocking patterns include a main light-blocking pattern extending along pixel column boundaries and fill spaces between adjacent optical patterns, and a subsidiary light-blocking pattern disposed on the optical patterns at pixel row boundaries and having a thickness smaller than a thickness of the main light-blocking pattern.

Abstract: Provided are a display panel, a preparation method thereof and a display device. The display panel includes a light-emitting substrate and a color filter substrate; the color filter substrate includes: a substrate, a baffle wall layer and a reflective metal layer. The baffle wall layer is located on one side of the substrate and includes multiple baffle wall structures; the reflective metal layer includes a first reflective subsection covering a surface on a side, close to the light-emitting substrate, of the multiple baffle wall structures; the first reflective subsection includes multiple first metal subsections and multiple second metal subsections; and the multiple first metal subsections are independently disposed, and adjacent ones of the multiple second metal subsections along the first direction are connected to each other.

Abstract: The present disclosure provides a lighting device and a manufacturing method thereof. The lighting device of an embodiment includes a substrate, a light emitting unit and a light adjusting layer. The light emitting unit is disposed on the substrate, and the light emitting unit includes a light output surface. The light adjusting layer is disposed on the light emitting unit, and the light adjusting layer includes a first portion and a second portion connected to the first portion. Wherein, the first portion only partially covers the light output surface, and the second portion does not cover the light output surface.

Abstract: The disclosure discloses an OLED element, a display panel, and a display device. The OLED element includes an anode, a light-emitting layer, a cathode stacked, and at least one of following components: an electric charge transfer and hole transmission component located between the anode and the light-emitting layer, where the electric charge transfer and hole transmission component includes a first light-induced electron transfer material and a hole transmission material; or an electric charge transfer and electron transmission component located between the cathode and the light-emitting layer, where the electric charge transfer and electron transmission component includes a second light-induced electron transfer material and an electron transmission material.

Abstract: The present application provides a display panel including a light emitting layer and a touch layer; wherein the light emitting layer comprises a plurality of blue light emitting units, a plurality of green light emitting units, and a plurality of red light emitting units; wherein a top of the touch layer is provided with a transparent cover plate, the transparent cover plate is provided with a light enhancement region, and a projection of the light enhancement region on the light emitting layer covers the blue light emitting units.

Abstract: Semiconductor structures involving multiple quantum wells provide increased efficiency of UV and visible light emitting diodes (LEDs) and other emitter devices, particularly at high driving current. LEDs made with the new designs have reduced efficiency droop under high current injection and increased overall external quantum efficiency. The active region of the devices includes separation layers configured between the well layers, the one or more separation regions being configured to have a first mode to act as one or more barrier regions separating a plurality of carriers in a quantum confined mode in each of the quantum wells being provided on each side of the one or more separation layers and a second mode to cause spreading of the plurality of carriers across each of the quantum wells to increase an overlap integral of all of the plurality of carriers. The devices and methods of the invention provide improved efficiency for solid state lighting, including high efficiency ultraviolet LEDs.

Abstract: An optoelectronic semiconductor chip including a semiconductor layer sequence containing a phosphide compound semiconductor material, wherein the semiconductor layer sequence includes a p-type semiconductor region, an n-type semiconductor region and an active layer disposed between the p-type semiconductor region and the n-type semiconductor region, a current spreading layer including a transparent conductive oxide adjoining the p-type semiconductor region, and a metallic p-connection layer at least regionally adjoining the current spreading layer, wherein the p-type semiconductor region includes a p-contact layer adjoining the current spreading layer, the p-contact layer contains GaP doped with C, a C dopant concentration in the p-contact layer is at least 5*1019 cm?3, and the p-contact layer is less than 100 nm thick.

Abstract: A semiconductor light emitting device includes a light extraction layer having a light extraction surface. The light extraction layer includes: a plurality of cone-shaped parts formed in an array on the light extraction surface, and a plurality of granular parts formed both on a side part of the cone-shaped part and in a space between adjacent cone-shaped parts. A method of manufacturing the semiconductor light emitting device includes: forming a mask having an array pattern on the light extraction layer; and etching the mask and the light extraction layer from above the mask. The etching includes first dry-etching performed until an entirety of the mask is removed and second dry-etching performed to further dry-etch the light extraction layer after the mask is removed.

Abstract: Provided is an organic light emitting device including an anode; a cathode; and a light emitting layer provided between the anode and cathode, wherein an electron control layer provided between the light emitting layer and the cathode and including a compound of Chemical Formula 1: is included, and the light emitting layer includes a compound of Chemical Formula 3:

Abstract: A solar cell includes a silicon substrate, an emitter area formed on a front surface of the silicon substrate, a tunneling oxide layer formed on a back surface of the silicon substrate, a back surface field area formed on the tunneling oxide layer and formed of a polycrystalline silicon layer, a back passivation film formed on the back surface field area and having an opening, and a back electrode connected to the back surface field area via the opening.

Abstract: A display apparatus in which a thin film transistor includes an oxide semiconductor pattern is disclosed. A gate electrode of the thin film transistor can overlap a channel region of the oxide semiconductor pattern. The gate electrode can have a structure in which a hydrogen barrier layer and a low-resistance electrode layer are stacked. A light-emitting device and an encapsulating element can be sequentially stacked on the thin film transistor. A thickness of the hydrogen barrier layer can be determined by a content of hydrogen per unit area of the encapsulating element. Thus, in the display apparatus, the characteristics deterioration of the thin film transistor due to hydrogen diffused from the encapsulating element can be prevented.

Abstract: A white LED and a method of repairing a light emitting device including, the method including colored light emitting diodes (LEDs) configured to emit different colors of light and arranged in pixels on a backplane of the device, the method including: determining whether each pixel is a functional pixel or a defective pixel; and repairing the defective pixels by transferring white LEDs to the backplane in each defective pixel.

Abstract: Provided is an element structure includes a heat dissipation member and a support member provided on the heat dissipation member. The support member includes a first mount material, a stress relaxation layer, and a second mount material in a stacking direction. The element structure further includes a functional element provided on the support member.

Abstract: A transparent display panel and a display device are disclosed. The orthographic projection of light-emitting region of electroluminescent structure on a base substrate overlaps with the orthographic projection of the region of the pixel circuit on the base substrate to form an overlap region, so that the area occupied by the electroluminescent structures in the sub-pixels is enlarged, thus increasing the pixel aperture ratio of the transparent display panel at the sides, away from the pixel circuits, of the electroluminescent structures.

Abstract: A method of preparing tunable inorganic patterned nanofeatures by infiltration of a block copolymer scaffold having a plurality of self-assembled periodic polymer microdomains. The method may be used sequential infiltration synthesis (SIS), related to atomic layer deposition (ALD). The method includes selecting a metal precursor that is configured to selectively react with the copolymer unit defining the microdomain but is substantially non-reactive with another polymer unit of the copolymer. A tunable inorganic features is selectively formed on the microdomain to form a hybrid organic/inorganic composite material of the metal precursor and a co-reactant. The organic component may be optionally removed to obtain an inorganic feature s with patterned nanostructures defined by the configuration of the microdomain.

Abstract: A display substrate, an ink-jet printing method thereof and a display apparatus are provided. The display substrate includes a base substrate. A plurality of pixel definition layers is disposed on the base substrate, and a sub-pixel region is formed between pixel definition layers. A pixel definition layer includes a first definition layer disposed on the base substrate, and the first definition layer adopts a hydrophilic material. The first definition layer includes an expansion layer capable of changing the thickness of the first definition layer.

Abstract: A light-emitting semiconductor device (100) comprising a semiconductor layer sequence (1) based on a phosphide and/or arsenide compound semiconductor material system is specified, wherein—the semiconductor layer sequence (1) comprises a light-emitting semiconductor layer (10), which is embodied to emit light during operation of the semiconductor device (100), between a first cladding layer (11) and a second cladding layer (12), and at least a first semiconductor protection layer (13), the first semiconductor protection layer (13) is arranged inside the first cladding layer (11), wherein the first cladding layer is formed as an outer layer, or the first semiconductor protection layer is arranged as an outer layer directly on the first cladding layer (11) on a side remote from the light-emitting semiconductor layer (10), and the first semiconductor protection layer (13) has a lower aluminum content than the first cladding layer.

Abstract: A process and electronic hardware and software system for rapidly heating and cooling an active sensing layer of a gas sensor is provided. A series of high-energy pulses is run through a CNT electrically-active layer, heating the layer to varying temperatures. The influence by various gases on the electrical conductivity of the layer can be used to identify gases (e.g., water vapor, alcohol, methane, O2, CO2, and CO). Advantageously, the same structure can also be used as a nanoheater, either within or outside the context of the gas sensor. The device can acquire a unique gas spectra in seconds, and thus accurately determine gas type and mixtures of gases based on a library of known spectra.

Abstract: A semiconductor light emitting element includes: an n-type semiconductor layer; an active layer provided in a first region on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; a first covering layer that is provided to cover a second region on the n-type semiconductor layer different from the first region, a side of the active layer, and the p-type semiconductor layer and that is made of aluminum oxide (Al2O3); an n-side contact electrode that extends through the first covering layer and is in contact with the n-type semiconductor layer; a p-side contact electrode that extends through the first covering layer and is in contact with the p-type semiconductor layer; and a second covering layer provided to cover the first covering layer, the n-side contact electrode, and the p-side contact electrode.

Abstract: A light-emitting diode structure includes a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a reflective layer, and an ohmic contact layer. The light-emitting layer is disposed under the first type semiconductor layer. The second type semiconductor layer is disposed under the light-emitting layer, wherein the second type semiconductor layer includes a plurality of recesses which are recessed from a lower surface of the second type semiconductor layer toward the light-emitting layer. The reflective layer is disposed in the recesses. The ohmic contact layer is disposed under the lower surface of the second type semiconductor layer and surrounds the recesses. The light-emitting diode structure can increase the luminous efficiency greatly.

Abstract: The present invention relates to an ink composition for an organic light emitting device that can be applied to an inkjet process. When the inkjet process is applied using this, it is possible to form a film having smooth and flat surfaces when dried after forming an ink film.

Abstract: A present application provides a light-emitting device and a method of manufacturing the same. The light-emitting device includes an anode, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode all laminated together. The hole transport layer is treated with a high boiling point polar solution to reduce a Coulomb force of the hole transport layer. The light-emitting device of the present application can improve light-emitting efficiency of the light-emitting device.

Abstract: A semiconductor structure includes a group IV substrate and a patterned group III-V device over the group IV substrate. A blanket dielectric layer is situated over the patterned group III-V device. A contact metal is situated within the blanket dielectric layer and an interconnect metal is situated over the blanket dielectric layer. The blanket dielectric layer can be substantially planar. The contact metal and the interconnect metal can be electrically connected to the patterned group III-V device. The patterned group III-V device can be optically and/or electrically connected to group IV devices in the group IV substrate.

Abstract: A flip chip III-Nitride LED which utilizes a dielectric coating backed by a metallic reflector (e.g., aluminum or silver). High reflectivity and low resistance contacts for optoelectronic devices. Low ESD rating optoelectronic devices. A VCSEL comprising a tunnel junction for current and optical confinement.

Abstract: The object of the present invention is to provide a Group III nitride semiconductor light emitting diode having improved light extraction efficiency. A Group III nitride semiconductor light emitting diode according to the present disclosure includes an RAMO4 layer including a single crystal represented by the general formula RAMO4 (wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe (III), Ga and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe (II), Co, Cu, Zn and Cd); and a layered product stacked on the RAMO4 layer. The layered product includes at least a light emitting layer including a Group III nitride semiconductor.

Abstract: A semiconductor module includes a base substrate; a plurality of light emitting elements; a plurality of color conversion layers being in contact with each upper portion of the plurality of light emitting elements adjacent to each other; and a light shielding layer disposed between the plurality of light emitting elements adjacent each other and between the color conversion layers adjacent to each other, and separating the plurality of light emitting elements and a plurality of color conversion layers.

Abstract: A method of producing a chip module includes providing a carrier; arranging semiconductor chips on the carrier; applying an electrically insulating material on the carrier; and structuring the carrier such that the chip module is provided, wherein the chip module includes separate carrier sections produced by structuring the carrier, the carrier sections of the chip module connected by the electrically insulating material.

Abstract: A bi-facial solar cell includes a silicon substrate, a first doped region formed on a front surface of the silicon substrate, an oxide layer formed on a back surface of the silicon substrate, a second doped region formed on the oxide layer and formed of a polycrystalline silicon layer, a first passivation layer formed on the first doped region, a first anti-reflection layer formed on the first passivation layer, a plurality of first finger electrodes connected to the first doped region through a first opening in the first passivation layer and the first anti-reflection layer, a second passivation layer formed on the second doped region, a second anti-reflection layer formed on the second passivation layer, and a plurality of second finger electrodes connected to the second doped region through a second opening in the second passivation layer and the second anti-reflection layer.

Abstract: The invention provides a lighting system (1000) configured to provide lighting system light (1001), the lighting system (1000) comprising: —a first light source (10) configured to generate first light source light (11) having an emission band with a peak wavelength selected from the range of 380-420 nm; —a second light source (20) configured to generate second light source light (21), spectrally different from the first light source light (11), having an emission band with a peak wavelength selected from the range of 425-440 nm; —a third light source (30) configured to generate third light source light (31), spectrally different from the first light source light (11) and from the second light source light (21), having an emission band with a peak wavelength selected from the range of 445-465 nm; —a luminescent material (200) configured to convert part of one or more of the first light source light (11), the second light source light (21), the third light source light (31), and optional fourth light source lig

Abstract: An optoelectronic semiconductor device includes a semiconductor layer sequence including an active zone that generates radiation by electroluminescence; a p-electrode and an n-electrode; an electrically insulating passivation layer on side surfaces of the semiconductor layer sequence; and an edge field generating device on the side surfaces on a side of the passivation layer facing away from the semiconductor layer sequence at the active zone, wherein the edge field generating device is configured to generate an electric field at least temporarily in an edge region of the active zone so that, during operation, a current flow through the semiconductor layer sequence is controllable in the edge region.

Abstract: Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities.

Abstract: A semiconductor device, comprising: a semiconductor substrate; a source, a gate and a drain fabricated on one side of the semiconductor substrate; a via hole region reserved in the region of the source; and an etching stopping layer made in the via hole region as well as a via hole under the etching stopping layer penetrating through the semiconductor substrate.

Abstract: An LED module includes light emission windows; LED cells corresponding to the light emission windows, the LED cells each including a lower and upper light emitting structure, the lower light emitting structure having an upper surface with first and second regions and having a first conductivity-type semiconductor layer, the upper light emitting structure being on the first region of the lower light emitting structure and having a second conductivity-type semiconductor layer, the LED cells including an active layer between the first and second conductivity-type semiconductor layers; a protective insulating film on a side surface of the lower light emitting structure and on the second region; a light blocking film on the protective insulating film, between the LED cells; a gap-fill insulating film on the protective insulating film between the LED cells and contacting a side surface of the upper light emitting structure; a first electrode; and a second electrode.

Abstract: A light emitting device includes a light emitting element, a terminal substrate and a fixing member. The light emitting element is a semiconductor laminate having a first semiconductor layer, a light emitting layer, and a second semiconductor layer that are laminated in that order, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. The terminal substrate includes a pair of terminals connected to the first electrode and the second electrode, and an insulator layer that fixes the terminals. At least a part of the outer edges of the terminal substrate is disposed more to a center of the light emitting device than the outer edges of the semiconductor laminate. The fixing member fixes the light emitting element and the terminal substrate.