Abstract: A display device may include a first electrode on a substrate, a bank covering edges of the first electrode, a plurality of light-emitting elements on the first electrode and aligned vertically with respect to the first electrode, a conductive polymer layer on the first electrode to fill gaps between the plurality of light-emitting elements, an insulating layer on the conductive polymer layer to fill the gaps between the plurality of light-emitting elements, and a second electrode on the bank, the insulating layer, and the plurality of light-emitting elements.

Abstract: A light emitting element package includes a substrate provided with an interconnect portion, a light emitting element mounted on the substrate and connected to the interconnect portion, and a cover member contacting an upper surface of the light emitting element while covering the light emitting element. The cover member comprises an organic polymer, which can have polymer nodes linked to each other, and has a light transmittance of 85% or more in an ultraviolet wavelength range.

Abstract: Various embodiments may include an organic electron-conducting layer comprising an n-dopant having the structure: wherein Ln denotes a number n of independently selected ligands L; M is a metal; R and R? comprise compounds independently selected; n is from 0 to 5; m is from 1 to 6; n+m is from 2 to 6; and x has a value of 0, 1 or 2.

Abstract: A display module package includes a semiconductor chip, a wiring member disposed on the semiconductor chip, including an insulating layer and a wiring layer, and contacting at least a portion of the semiconductor chip, a light emitting device array disposed on the wiring member and including a plurality of light emitting devices disposed on one surface, wherein the wiring member is between the semiconductor chip and the light emitting device, and a molding member disposed on the wiring member, sealing part of the light emitting device array, and having an opening for exposing the plurality of light emitting devices.

Abstract: A semiconductor laser includes a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence, wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously, the at least one first partial region is annealed, and the at least one second partial region is unannealed.

Abstract: An illumination apparatus for illuminating a sample plane and a sample that is optionally arranged therein along an illumination beam path includes: a first light source (for outputting light of at least one first wavelength (?photo), a second light source for outputting light of at least one second wavelength (?exc), and a diffraction grating in the illumination beam path between the first and second light sources and the sample plane. Light of the first wavelength (?photo) is not diffracted by the diffraction grating, and light of the second wavelength (?exc) is diffracted due to the effect of the diffraction grating. The illumination apparatus can be used in a microscope.

Abstract: A method for forming a pixelated optoelectronic stack comprises forming a stacked layer structure that comprises a bottom electrode layer, an optoelectronic layer over the bottom electrode layer, and a patterned hard-mask comprising a pattern over the optoelectronic layer. The method comprises replicating the pattern into the optoelectronic layer and the bottom electrode layer, thereby forming a first intermediate pixelated stack comprising at least two islands of stack separated from one another by stack-free areas; providing an electrically insulating layer on the first intermediate pixelated stack; removing a top portion of the electrically insulating layer and removing any remaining hard-mask so that a top surface of the electrically insulating layer is coplanar with an exposed top surface of the first intermediate pixelated stack, yielding a second intermediate pixelated stack; and forming a top transparent electrode layer over the second intermediate pixelated stack.

Abstract: An optoelectronic component may include a layer sequence having an active layer configured to emit an electromagnetic primary radiation and a conversion element arranged in the beam path of the primary radiation. The conversion element may include a conversion layer and a conversion potting arranged over the conversion layer. The conversion layer may include a first matrix material and a converter material, and the conversion potting may include a second matrix material and a converter material. There may be a jump in concentration of converter material between the conversion layer and the conversion potting.

Abstract: A growth substrate and the display panel include a substrate, including chip growth regions arranged at intervals and in an array and a non-growth region located among chip growth regions. The growth substrate includes a refraction structure disposed on the substrate. An orthographic projection of the refraction structure on the substrate covers the non-growth region without overlapping with at least parts of the chip growth regions. The refraction structure is configured to refract light corresponding to the non-growth region to positions corresponding to the chip growth regions. The substrate has a first surface and a second surface and light emitting chips are grown in the chip growth regions of the first surface. The refraction structure is disposed on the second surface, an orthographic projection on the substrate covers the non-growth region, and one side, away from the substrate, of the refraction structure is a light incident side.

Abstract: An optoelectronic package and a method for producing the optoelectronic package are provided. The optoelectronic package includes a carrier, a photonic device, a first encapsulant and a second encapsulant. The photonic device is disposed on the carrier. The first encapsulant covers the carrier and is disposed around the photonic device. The second encapsulant covers the first encapsulant and the photonic device. The first encapsulant has a topmost position and a bottommost position, and the topmost position is not higher than a surface of the photonic device.

Abstract: A manufacturing method of a display device includes providing a first organic layer in a display area and a non-display area, to cover a pixel electrode and a pad electrode, respectively, providing a first electrode of a light emitting element, in the display area, the first organic layer being between the pixel electrode and the first electrode, after forming the first electrode, removing a portion of the first organic layer which is in the non-display area, to expose the pad electrode from the first organic layer; and providing a light emitting layer of the light emitting element, corresponding to the first electrode.

Abstract: An embodiment of the present disclosure discloses a display panel and a display device, wherein third openings are disposed in a region of a black matrix layer corresponding to a transition region in the display panel, so that external light can be reflected by the reflection structure through the third openings, to form reflected light, thereby increasing the light reflectivity of the transition region and improving the dimmer transition region when the panel is screen-off and screen-on.

Abstract: An organic light emitting diode display includes a plurality of first signal lines, a first insulating layer covering the first signal lines, a plurality of second signal lines on the first insulating layer and crossing the first signal lines, and a plurality of pixels connected to the first signal lines and the second signal lines. A groove in the first insulating layer separates adjacent ones of the pixels and a filling material in the groove.

Abstract: An inventive light-emitting apparatus comprises an array of multiple light-emitting pixels, and one or more transmissive optical elements positioned at a light-emitting surface of the light-emitting pixel array. One or more of the light-emitting pixels is defective. Each optical element is positioned at a location of a corresponding defective light-emitting pixel, and extends over that defective pixel and laterally at least partly over one or more adjacent pixels. Each optical element transmits laterally at least a portion of light emitted by the adjacent pixels to propagate away from the array from the location of the defective pixel, reducing the appearance of the defective pixel.

Abstract: A display device may include a substrate including pixels; a first bank that defines an emission area of the pixels; a first electrode and a second electrode spaced apart from each other in the emission area; a first insulating layer disposed on the first electrode and the second electrode; light emitting elements disposed on the first insulating layer between the first electrode and the second electrode; a second insulating layer disposed on the first bank; a first opening passing through the first insulating layer; and a second opening passing through the second insulating layer. The first opening and the second opening may overlap the first bank.

Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

Abstract: A display apparatus is provided. The display apparatus can include a substrate hole penetrating a device substrate, light-emitting devices spaced away from the substrate hole, and at least one separating device between the substrate hole and the light-emitting devices. Each of the light-emitting devices can include a light-emitting layer between a first electrode and a second electrode. The separating device can surround the substrate hole. The separating device can include at least one under-cut structure. The under-cut structure can include a depth and a length, which are larger than a thickness of the light-emitting layer. Thus, in the display apparatus, the damage of the light-emitting devices due to external moisture permeating through the substrate hole can be prevented.

Abstract: A display device includes a first electrode, a second electrode spaced apart from the first electrode and facing the first electrode, a first insulating layer disposed to at least partially cover the first electrode and the second electrode, a second insulating layer disposed on at least a part of the first insulating layer, and a light-emitting element disposed on the second insulating layer between the first electrode and the second electrode, wherein at least a part of a lower surface of the light-emitting element is chemically bonded to the second insulating layer.

Abstract: A light emitting device and a light source module are provided. The light emitting device includes a base, a conductive unit, a light unit, and a package. The base includes a first substrate and n through holes, and the through holes pass through the first substrate. The conductive unit includes m conductors that are separate from each other, and the conductors pass through the first substrate. The light unit is electrically connected to the conductors. The package includes a first package body surrounding the light unit and a second package body covering the light unit and the first package body. The first package body and the second package body have different optical properties. Furthermore, m and n are integers greater than or equal to 2, and m is greater than or equal to n.

Abstract: A display apparatus includes a display panel having an image acquisition region within a display area. The display panel includes a substrate and a plurality of light-emitting elements over the substrate. The plurality of light-emitting elements include one or more first light-emitting elements positionally within the image acquisition region. At least one first light-emitting element includes a non-transparent electrode provided with at least one through-hole configured to allow the lights from the outside pattern to pass through the display panel.

Abstract: Light-emitting diodes (LEDs), and more particularly edge structures for light shaping in LED chips are disclosed. Edge structures may include a repeating pattern of features that is formed along one or more mesa sidewalls of active LED structure mesas. Such active LED structure mesas may include a p-type layer, an active layer, and at least a portion of an n-type layer. Features of the repeating pattern may be configured with a size and/or shape to promote redirection of laterally propagating light from the active layer at the mesa sidewalls. In this manner, light that may otherwise escape the LED chip at the mesa sidewalls may be redirected toward an intended emission direction for the LED chip. Certain aspects include reflective structures that are provided on the active LED structures mesas and are further arranged to extend past the active LED structure mesas to cover the repeating pattern of features.

Abstract: A micro LED display device includes a substrate, micro LED units and a transparent insulation layer. The substrate includes conductive pads and conductive connecting portions. The conductive pads are disposed on the substrate. Each of the micro LED units includes a semiconductor epitaxial structure and electrodes. The electrodes are disposed on the semiconductor epitaxial structure, and each of the electrodes is connected to one of the conductive connecting portions adjacent to each other. The transparent insulation layer is disposed on the substrate and covers the conductive pads, the conductive connecting portions and the micro LED units, and the transparent insulation layer is filled between the electrodes of each of the micro LED units. The transparent insulation layer relative to a surface on each of the semiconductor epitaxial structures is of a first thickness and a second thickness, and the first thickness is different from the second thickness.

Abstract: A high-yield fabricating method of a semiconductor device including a peeling step is provided. A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin.

Abstract: A communication device includes a display device, a phase tuning layer, and a mmWave (Millimeter Wave) module. The display device includes a first display portion and a second display portion. The pixel density of the first display portion is greater than that of the second display portion. The phase tuning layer is adjacent to the second display portion. The mmWave module generates a wireless signal. The wireless signal is propagated through the second display portion and the phase tuning layer.

Abstract: Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

Abstract: Discussed is a display device, including a substrate, a substrate electrode disposed on the substrate, a magnetic portion disposed and having a magnetic property on an upper surface of the substrate, and a plurality of light-emitting devices respectively disposed on the magnetic portion, wherein the each of the plurality of light-emitting devices includes a magnetic electrode forming an attractive force with the magnetic portion.

Abstract: An organic light-emitting device includes an auxiliary layer located between a first electrode and a hole injection layer or a hole transport layer and including a metal fluoride. The metal of the metal fluoride may be a Group III metal having a high work function of 3.8 eV or more. The hole injection barrier at the interface between the first electrode and the hole injection layer may be adjusted by the fluoride of the high work function metal in the auxiliary layer so that the electron-hole charge balance and the efficiency of the organic light-emitting device may be improved.

Abstract: A display panel, a display device, and a control method are provided. The display panel includes: a substrate; a group of light-emitting devices located at a side of the substrate and comprising a first light-emitting device and a second light-emitting device that is disposed at least partially surrounding the first light-emitting device; a driving circuit comprising a first driving circuit for driving the first light-emitting device and a second driving circuit for driving the second light-emitting device; and a shielding part located at a side of the group of light-emitting devices away from the substrate, wherein an orthographic projection of the shielding part on the substrate is at least partially overlapped with an orthographic projection of the second light-emitting device on the substrate. The embodiments of the present application can not only achieve privacy protection, but also improve a display effect of the display device under a front viewing angle.

Abstract: A light-emitting display device includes: a substrate including a first region and a second region spaced apart from each other, a first lower electrode at the first region, a second lower electrode at the second region, a first light-emitting layer having a first dopant on the first lower electrode of the first region, a second light-emitting layer on the second lower electrode of the second region, the second light-emitting layer having a second dopant different form the first dopant, the second light-emitting layer being configured to emit a light of a same color as that of the first light-emitting layer, and a common electrode on the first and second light-emitting layers, over the first and second regions.

Abstract: The present disclosure provides a transistor device, a manufacturing method thereof, a display substrate and a display device. The transistor device includes a base substrate, as well as a first transistor and a second transistor that are disposed on the base substrate. The first transistor includes a first active layer. The second transistor includes a second gate. The first active layer and the second gate are disposed in the same layer.

Abstract: A display device includes a plurality of signal lines disposed on the upper surface of the first substrate and electrically connected to the display unit, a plurality of link lines disposed below the first substrate, and a plurality of side lines which is disposed on a side surface of the first substrate and connecting the plurality of signal lines and the plurality of link lines, and each of the plurality of side lines includes a first conductive layer which is disposed on the side surface of the first substrate and is formed of first conductive particles and a second conductive layer which covers the first conductive layer and is formed of second conductive particles having a particle size larger than that of the first conductive particles. Accordingly, the contact resistance of the side line is lowered and the mechanical property is improved while minimizing a bezel area.

Abstract: A method of producing a light source device includes providing a light emitting device having a substrate including a base member that includes a bottom surface and a recess. The substrate further including a wiring portion in the recess. The method further including providing a support substrate having a support base member, a first wiring pattern on a top surface of the support base member and including a joining region, and an insulating region, and applying a solder member such that the solder member on the insulating region has a volume larger than that of the solder member on the joining region. The light emitting device is placed on the support substrate while the solder member is separate from a portion of the wiring portion positioned in the vicinity of the bottom surface and the wiring portion is joined to the joining region.

Abstract: A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semi

Abstract: A light-emitting diode is provided. The light-emitting diode includes a P-type semiconductor layer, a N-type semiconductor layer, and a light-emitting stack located therebetween. The light-emitting stack includes a plurality of well layers and a plurality of barrier layers that are alternately stacked, the well layers includes at least one first well layer, at least one second well layer, and third well layers that have different indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration. Three of well layers that are closest to the P-type semiconductor layer are the third well layers, and the first well layer is closer to the N-type semiconductor layer than the P-type semiconductor layer.

Abstract: A light emitting device includes first and second electrodes disposed on a substrate and spaced apart from each other; at least one light emitting diode disposed between the first and second electrodes; an insulating pattern overlapping an upper portion of the at least one light emitting diode and exposing first and second ends of the at least one light emitting diode; a first contact electrode electrically connecting the first end of the at least one light emitting diode to the first electrode; and a second contact electrode electrically connecting the second end of the at least one light emitting diode to the second electrode. The insulating pattern may completely overlap the first and second ends of the at least one light emitting diode in a plan view, and have a width reducing toward a lower portion of the insulating pattern.

Abstract: A light emitting device including a blue light emitting portion configured to emit blue light, a green light emitting portion configured to emit green light, a red light emitting portion configured to emit red light, in which the blue light emitting portion include a first near-UV light emitting diode chip and a first wavelength conversion portion for wavelength conversion of near-UV light emitted from the first near-UV light emitting diode chip, blue light emitted from the blue light emitting portion includes a first peak wavelength in a wavelength band corresponding to near-UV light and a second peak wavelength in a wavelength band corresponding to blue light, and an intensity of the first peak wavelength is in a range of 0% to 20% of intensity of the second peak wavelength.

Abstract: Disclosed are a display device and a manufacturing method thereof. The display device includes a plurality of pixels, a light emitting device provided in each of the plurality of pixels, the light emitting device having a first surface and a second surface, which are opposite to each other, a first electrode electrically connected to the first surface of the light emitting device, a second electrode electrically connected to the second surface of the light emitting device, and a metal oxide pattern interposed between the second surface of the light emitting device and the second electrode. The metal oxide pattern is provided to cover a portion of the second surface and to expose a remaining portion of the second surface. The second electrode is electrically connected to the exposed remaining portion of the second surface, and the metal oxide pattern includes single-crystalline or polycrystalline alumina.

Abstract: [Object] To make it possible to improve viewing angle characteristics more. [Solution] Provided is a display device including: a plurality of light emitting sections formed on a substrate; and a color filter provided on the light emitting section to correspond to each of the plurality of light emitting sections. The light emitting sections and the color filters are arranged such that, in at least a partial region in a display surface, a relative misalignment between a center of a luminescence surface of the light emitting section and a center of the color filter corresponding to the light emitting section is created in a plane perpendicular to a stacking direction.

Abstract: Disclosed are a display substrate, a manufacturing method thereof, a display panel and a display device. The display panel comprises: a base substrate provided with a first area and a second area which are not overlapped with each other; a low temperature poly-silicon transistor arranged in the first area, the low temperature poly-silicon transistor comprises a poly-silicon active layer; an oxide transistor arranged in the second area, the oxide transistor comprises a first gate electrode; the first gate electrode is arranged in a same layer as the poly-silicon active layer, and a material of the first gate electrode is heavily-doped poly-silicon.

Abstract: A semiconductor device includes a first switching element, a second switching element, an optical coupling element, a plurality of leads and an outer resin member. The first switching element includes a first semiconductor chip and a first inner resin member sealing the first semiconductor chip. The second switching element includes a second semiconductor chip and a second inner resin member sealing the second semiconductor chip. The optical coupling element includes a light-emitting element, a light-receiving element and a third inner resin member sealing the light-emitting element and the light-receiving element. The first and second switching element and the optical coupling element are provided with terminals projecting from the first to third inner resin member, and the plurality of leads are electrically connected to the terminals. The outer resin member seals the first and second switching elements, the optical coupling element, and the plurality of leads.

Abstract: A light emitting device includes: a base comprising a first wiring, a second wiring, and a third wiring; a first semiconductor laser element electrically connected to the first wiring and the second wiring, at an upper surface side of the base; a second semiconductor laser element electrically connected to the second wiring and the third wiring, at the upper surface side of the base; and a base cap fixed to the base such that the first semiconductor laser element and the second semiconductor laser element are enclosed in a space defined by the base and the base cap. The first semiconductor laser element and the second semiconductor laser element are connected in series. A portion of each of the first, second, and third wirings is exposed at the upper surface of the base at locations outside of the space defined by the base and the base cap.

Abstract: Light-emitting devices with active electrical elements and light-emitting diodes (LEDs) are disclosed. LEDs may be mounted on an active electrical element such that the LEDs are within peripheral edges of the active electrical element. Contact pads may be arranged on the active electrical element for receiving external power and communication signals for active control of the LEDs. A light-transmissive carrier may be positioned over the active electrical element and the LEDs. Electrical traces of the carrier may be configured to electrically connect with the contact pads to route external power connections and communication signals for the active electrical element. Other electrical traces of the carrier may form a touch sensing element that is electrically coupled with the active electrical element. Active electrical elements with LEDs provided thereon may form compact sizes for use as active LED pixels configured for active-matrix addressing within an LED display.

Abstract: Provided are a transfer method, a display device, and a storage medium. The transfer method includes: performing partial cutting on preset scribe lines (22) on an epitaxial layer to obtain to-be-transferred wafers (24) after cutting (S1); adhering a temporary substrate (26) on the to-be-transferred wafers (24) through adhering a first release adhesive (25) to first side faces of the to-be-transferred wafers (24), and removing a growth substrate (21) (S2); adhering the to-be-transferred wafers (24) to the blue tape (28) through adhering a second release adhesive (27) to second side faces of the to-be-transferred wafers (24), and removing the temporary substrate (26) (S3); jacking up the blue tape (28) with a roller so that remaining scribe lines (23) on the to-be-transferred wafers (24) are separated by breaking under action of stress (S4).

Abstract: A method of manufacturing a nitride semiconductor device includes: forming a first semiconductor layer containing Al, Ga, and N and having a first thickness by doping a p-type impurity; forming a second semiconductor layer over the first semiconductor layer without doping an n-type impurity and without doping a p-type impurity, the second semiconductor layer containing Al and N and having a second thickness; and heat treating the first semiconductor layer and the second semiconductor layer. The second thickness is less than the first thickness. T band gap energy of the second semiconductor layer is greater than a band gap energy of the first semiconductor layer. After the heat treating of the first semiconductor layer and the second semiconductor layer, the second semiconductor layer contains the p-type impurity by diffusion of the p-type impurity from the first semiconductor layer.

Abstract: A sealing method includes dispensing an adhesive on an edge surface of a first part, performing a first activation for hardening the adhesive to a predetermined hardness, performing a second activation for triggering appearance of adhesion strength of the adhesive, assembling the first part and a second part, and pressing the first part and the second part against each other.

Abstract: Various embodiments of solid state transducer (“SST”) devices are disclosed. In several embodiments, a light emitter device includes a metal-oxide-semiconductor (MOS) capacitor, an active region operably coupled to the MOS capacitor, and a bulk semiconductor material operably coupled to the active region. The active region can include at least one quantum well configured to store first charge carriers under a first bias. The bulk semiconductor material is arranged to provide second charge carriers to the active region under the second bias such that the active region emits UV light.

Abstract: A display device includes: a substrate; a first conductive layer on the substrate and comprising a first signal line; an insulating layer pattern on the first conductive layer; a semiconductor pattern on the insulating layer pattern; a gate insulating layer on the semiconductor pattern; and a second conductive layer comprising a gate electrode on the gate insulting layer and a first source/drain electrode and a second source/drain electrode, each on at least a part of the semiconductor pattern, wherein the insulating layer pattern and the semiconductor pattern have a same planar shape, the semiconductor pattern comprises a channel region overlapping the gate electrode, a first source/drain region on a first side of the channel region and a second source/drain region on a second side of the channel region, and the first source/drain electrode electrically connects the first source/drain region and the first signal line.

Abstract: A manufacturing method of a display device includes providing a first organic layer in a display area and a non-display area, to cover a pixel electrode and a pad electrode, respectively, providing a first electrode of a light emitting element, in the display area, the first organic layer being between the pixel electrode and the first electrode, after forming the first electrode, removing a portion of the first organic layer which is in the non-display area, to expose the pad electrode from the first organic layer; and providing a light emitting layer of the light emitting element, corresponding to the first electrode.

Abstract: An organic light emitting device (OLED) that includes an anode, a cathode, and an organic layer disposed between the anode and the cathode. The organic layer includes a metal compound that comprises a ligand LA of Formula I, wherein the dashed lines represent coordination to a metal M. The metal M is selected from the groups consisting of Os, Ru, Ir, Rh, Pt, Pd, and Cu, and the metal is further coordinated to one or more ligand(s) LB, wherein the ligand(s) LB can be the same or different if more than one ligand LB is present. Optionally one or two of the ligand(s) LB can independently link to the ligand LA through one of R1 to R5. The invention is also directed to a consumer product that includes an OLED, and the OLED includes an organic layer that includes a metal compound that comprises a ligand LA of Formula I.

Abstract: A method for manufacturing an electronic device includes transferring a plurality of light emitting units from a carrier substrate to an object substrate through steps of: picking the plurality of light emitting units from the carrier substrate by a pick-and-place tool, and placing the plurality of light emitting units onto the object substrate. The steps are both performed under a protection by at least one electrostatic discharge protective unit.