Incoherent Light Emitter Structure Patents (Class 257/79)
  • Patent number: 11349280
    Abstract: A semiconductor structure includes a group IV substrate and a patterned group III-V device over the group IV substrate. A blanket dielectric layer is situated over the patterned group III-V device. A contact metal is situated within the blanket dielectric layer and an interconnect metal is situated over the blanket dielectric layer. The blanket dielectric layer can be substantially planar. The contact metal and the interconnect metal can be electrically connected to the patterned group III-V device. The patterned group III-V device can be optically and/or electrically connected to group IV devices in the group IV substrate.
    Type: Grant
    Filed: January 17, 2020
    Date of Patent: May 31, 2022
    Assignee: Newport Fab, LLC
    Inventors: Edward Preisler, Oleg Martynov
  • Patent number: 11348908
    Abstract: A flip chip III-Nitride LED which utilizes a dielectric coating backed by a metallic reflector (e.g., aluminum or silver). High reflectivity and low resistance contacts for optoelectronic devices. Low ESD rating optoelectronic devices. A VCSEL comprising a tunnel junction for current and optical confinement.
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: May 31, 2022
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Benjamin P. Yonkee, Erin C. Young, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 11335839
    Abstract: The object of the present invention is to provide a Group III nitride semiconductor light emitting diode having improved light extraction efficiency. A Group III nitride semiconductor light emitting diode according to the present disclosure includes an RAMO4 layer including a single crystal represented by the general formula RAMO4 (wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe (III), Ga and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe (II), Co, Cu, Zn and Cd); and a layered product stacked on the RAMO4 layer. The layered product includes at least a light emitting layer including a Group III nitride semiconductor.
    Type: Grant
    Filed: July 9, 2019
    Date of Patent: May 17, 2022
    Assignee: PANASONIC CORPORATION
    Inventors: Hiroshi Ono, Kenya Yamashita, Akihiko Ishibashi
  • Patent number: 11329172
    Abstract: A bi-facial solar cell includes a silicon substrate, a first doped region formed on a front surface of the silicon substrate, an oxide layer formed on a back surface of the silicon substrate, a second doped region formed on the oxide layer and formed of a polycrystalline silicon layer, a first passivation layer formed on the first doped region, a first anti-reflection layer formed on the first passivation layer, a plurality of first finger electrodes connected to the first doped region through a first opening in the first passivation layer and the first anti-reflection layer, a second passivation layer formed on the second doped region, a second anti-reflection layer formed on the second passivation layer, and a plurality of second finger electrodes connected to the second doped region through a second opening in the second passivation layer and the second anti-reflection layer.
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: May 10, 2022
    Assignee: LG ELECTRONICS INC.
    Inventors: Jaewon Chang, Kyungjin Shim, Hyunjung Park, Junghoon Choi
  • Patent number: 11329030
    Abstract: A method of producing a chip module includes providing a carrier; arranging semiconductor chips on the carrier; applying an electrically insulating material on the carrier; and structuring the carrier such that the chip module is provided, wherein the chip module includes separate carrier sections produced by structuring the carrier, the carrier sections of the chip module connected by the electrically insulating material.
    Type: Grant
    Filed: May 2, 2017
    Date of Patent: May 10, 2022
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Heng Keong Yip
  • Patent number: 11329033
    Abstract: A semiconductor module includes a base substrate; a plurality of light emitting elements; a plurality of color conversion layers being in contact with each upper portion of the plurality of light emitting elements adjacent to each other; and a light shielding layer disposed between the plurality of light emitting elements adjacent each other and between the color conversion layers adjacent to each other, and separating the plurality of light emitting elements and a plurality of color conversion layers.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: May 10, 2022
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Hiroaki Onuma, Hiroyoshi Higashisaka, Tsuyoshi Ono, Takashi Ono, Takashi Kurisu, Yuhsuke Fujita, Toshio Hata, Katsuji Iguchi
  • Patent number: 11320100
    Abstract: The invention provides a lighting system (1000) configured to provide lighting system light (1001), the lighting system (1000) comprising: —a first light source (10) configured to generate first light source light (11) having an emission band with a peak wavelength selected from the range of 380-420 nm; —a second light source (20) configured to generate second light source light (21), spectrally different from the first light source light (11), having an emission band with a peak wavelength selected from the range of 425-440 nm; —a third light source (30) configured to generate third light source light (31), spectrally different from the first light source light (11) and from the second light source light (21), having an emission band with a peak wavelength selected from the range of 445-465 nm; —a luminescent material (200) configured to convert part of one or more of the first light source light (11), the second light source light (21), the third light source light (31), and optional fourth light source lig
    Type: Grant
    Filed: November 29, 2019
    Date of Patent: May 3, 2022
    Assignee: SIGNIFY HOLDING B.V.
    Inventors: Marcus Theodorus Maria Lambooij, Martinus Petrus Joseph Peeters, Tobias Borra, Dragan Sekulovski
  • Patent number: 11309305
    Abstract: Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities.
    Type: Grant
    Filed: October 29, 2019
    Date of Patent: April 19, 2022
    Assignees: The Board of Trustees of the University of Illinois, X-Celeprint Limited
    Inventors: John A. Rogers, Ralph Nuzzo, Matthew Meitl, Etienne Menard, Alfred Baca, Michael Motala, Jong-Hyun Ahn, Sang-Il Park, Chang-Jae Yu, Heung Cho Ko, Mark Stoykovich, Jongseung Yoon
  • Patent number: 11309459
    Abstract: An optoelectronic semiconductor device includes a semiconductor layer sequence including an active zone that generates radiation by electroluminescence; a p-electrode and an n-electrode; an electrically insulating passivation layer on side surfaces of the semiconductor layer sequence; and an edge field generating device on the side surfaces on a side of the passivation layer facing away from the semiconductor layer sequence at the active zone, wherein the edge field generating device is configured to generate an electric field at least temporarily in an edge region of the active zone so that, during operation, a current flow through the semiconductor layer sequence is controllable in the edge region.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: April 19, 2022
    Assignee: OSRAM OLED GmbH
    Inventors: Clemens Vierheilig, Philipp Kreuter, Rainer Hartmann, Michael Binder, Tobias Meyer
  • Patent number: 11302745
    Abstract: An LED module includes light emission windows; LED cells corresponding to the light emission windows, the LED cells each including a lower and upper light emitting structure, the lower light emitting structure having an upper surface with first and second regions and having a first conductivity-type semiconductor layer, the upper light emitting structure being on the first region of the lower light emitting structure and having a second conductivity-type semiconductor layer, the LED cells including an active layer between the first and second conductivity-type semiconductor layers; a protective insulating film on a side surface of the lower light emitting structure and on the second region; a light blocking film on the protective insulating film, between the LED cells; a gap-fill insulating film on the protective insulating film between the LED cells and contacting a side surface of the upper light emitting structure; a first electrode; and a second electrode.
    Type: Grant
    Filed: June 15, 2020
    Date of Patent: April 12, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jihye Yeon, Hanul Yoo, Jihoon Yun, Suhyun Jo
  • Patent number: 11302788
    Abstract: A semiconductor device, comprising: a semiconductor substrate; a source, a gate and a drain fabricated on one side of the semiconductor substrate; a via hole region reserved in the region of the source; and an etching stopping layer made in the via hole region as well as a via hole under the etching stopping layer penetrating through the semiconductor substrate.
    Type: Grant
    Filed: November 15, 2019
    Date of Patent: April 12, 2022
    Assignee: Dynax Semiconductor Inc.
    Inventors: Pan Pan, Naiqian Zhang, Xi Song, Jianhua Xu
  • Patent number: 11294194
    Abstract: An image display device according to the present disclosure includes a first self-luminous display element that self-emits an image of first color light, a second self-luminous display element that self-emits an image of second color light, a third self-luminous display element that self-emits an image of third color light, and a prism including a dichroic mirror that synthesizes images of three colors, the first, the second, and the third self-luminous display element are each configured to extract light from a side of a semireflective semitransmissive electrode included in the first, the second, and the third self-luminous display element, and at least one of sums of a thickness of a transparent electrode and a thickness of an optical adjustment layer differs from other in the first, the second, and the third self-luminous display element.
    Type: Grant
    Filed: February 27, 2020
    Date of Patent: April 5, 2022
    Assignee: SEIKO EPSON CORPORATION
    Inventors: Hidetoshi Yamamoto, Yuiga Hamade
  • Patent number: 11296266
    Abstract: In a flip-chip LED assembly having an array of LEDs formed on the same substrate, different LEDs of the array have different distances to the n-contacts of the assembly. This may cause current crowding as current has to spread from the n-contacts through the substrate to each the farthest LEDs of the LED array, requiring LEDs that are farther away to be driven with a higher voltage in order to receive a desired amount of current. To spread current more evenly through the LED assembly and reduce a voltage difference between the closest and farthest LEDs of the array, a current spreading layer having a conductive material (e.g., a conductive oxide) is formed on a surface of the substrate of the LED assembly. The current spreading layer may be a bulk layer or be patterned to increase light extraction from the LEDs of the array.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: April 5, 2022
    Assignee: Facebook Technologies, LLC
    Inventors: Christophe Antoine Hurni, John Michael Goward, Chloe Astrid Marie Fabien
  • Patent number: 11295680
    Abstract: Presented are apparatus, systems and methods for creating tuned color emissions, from lighting and displays, that can be electronically controlled to select a desirable spectrum of wavelengths safer for human vision, for optimal color reproduction, for energy/brightness efficiency, and more. Apparatus including light emitting chips, materials, package design, electronic control devices and circuits, lights, light-fixtures, display panels, visual computing devices and systems, are disclosed. An embodiment is described which is capable of operating in modes, where eye-safe colors are rendered with minimal harmful wavelengths, as well as at least one mode of operation favoring color rendering, and brightness configurations. An embodiment is operable to deliver a paper-like black-on-white viewing experience, in both night-time and day-time operating modes, with reduced high-energy blue-wavelength light spectra.
    Type: Grant
    Filed: April 10, 2020
    Date of Patent: April 5, 2022
    Assignee: PixelDisplay, Inc.
    Inventor: David Wyatt
  • Patent number: 11289458
    Abstract: A micro light-emitting diode transparent display including a transparent substrate is provided. N pixels are defined on the transparent substrate. N sets of micro light-emitting diodes are on the transparent substrate and respectively located in the N pixels. A wall portion is on the transparent substrate and surrounding one of the N sets of the micro light-emitting diodes to form an enclosed region on the transparent substrate. A length of a periphery of the enclosed region is equal to or smaller than 85% of a length of an outer periphery of one of the N pixels in which said one of the N sets of the micro light-emitting diodes is located. An area of said one of the N pixels outside the enclosed region allows light to directly pass through the micro light-emitting diode transparent display.
    Type: Grant
    Filed: August 1, 2019
    Date of Patent: March 29, 2022
    Assignee: MIKRO MESA TECHNOLOGY CO., LTD.
    Inventor: Li-Yi Chen
  • Patent number: 11289632
    Abstract: Provided is a display apparatus including a substrate, a plurality of light emitting device (LED) elements arranged in front of the substrate, a transmission layer formed on a front surface of the substrate to entirely cover the plurality of LED elements, a first polarization member arranged in front of the transmission layer, and a second polarization member arranged on a front surface of the first polarization member and allowing external light to be incident thereon, wherein the transmission layer is provided such that polarization of external light polarized through the second polarization member and the first polarization member is maintained in a course of the polarized external light passing through the transmission layer, being reflected by the front surface of the substrate or the plurality of LED elements and being directed to the first polarization member.
    Type: Grant
    Filed: November 21, 2018
    Date of Patent: March 29, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung Hoon Cha, Won Yong Lee, Won Soon Park, Jung-Hoon Yoon, Tack Mo Lee
  • Patent number: 11271139
    Abstract: There is provided a semiconductor light emitting device, including: a first electrode; a substrate formed over the first electrode; a metal layer formed over the substrate; a semiconductor layer formed over the metal layer and including a light-emitting layer, a first conductivity type layer disposed at a substrate side with respect to the light-emitting layer and a second conductivity type layer disposed at an opposite side to the substrate with respect to the light-emitting layer; and a second electrode formed over the second conductivity type layer.
    Type: Grant
    Filed: October 9, 2019
    Date of Patent: March 8, 2022
    Assignee: ROHM CO., LTD.
    Inventor: Yohei Ito
  • Patent number: 11264578
    Abstract: A stretchable display device includes a display area having stretchable display units each including first islands on which pixels are disposed and first cut-out grooves between the first islands. A peripheral area is adjacent to the display area, the peripheral area includes stretchable peripheral units each including first lines on which driving circuits are disposed and first opening portions between the first lines. A buffer area is disposed between the display area and the peripheral area. The buffer area includes stretchable buffer units each including second islands, second cut-out grooves between the second islands, second lines connected to the second islands, and second opening portions between the second lines. Shapes of the second cut-out grooves may be different from shapes of the first cut-out grooves, and shapes of the second opening portions may be different from shapes of the first opening portions.
    Type: Grant
    Filed: November 21, 2019
    Date of Patent: March 1, 2022
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Gyung Soon Park, Jae Min Shin, Junki Jeong, Hyejin Joo, Jongho Hong
  • Patent number: 11257996
    Abstract: A light emitting apparatus includes: a mount substrate; a first light emitting device mounted on the mount substrate; a light transparent member, wherein a lower surface of the light transparent member is attached to an upper surface of the first light emitting device via an adhesive material, wherein the light transparent member has a plate shape and is positioned to receive incident light emitted from the first light emitting device, and wherein a first lateral surface of the light transparent member is located laterally inward of a lateral surface of the first light emitting device; and a covering member that contains a light reflective material and covers at least the lateral surface of the light transparent member.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: February 22, 2022
    Assignee: NICHIA CORPORATION
    Inventors: Shunsuke Minato, Masahiko Sano
  • Patent number: 11256138
    Abstract: A white light emitting diode includes: a light emitting diode chip including a first surface and a second surface opposite to the first surface; an electrode disposed on the first surface of the light emitting diode; a phosphor layer disposed on the second surface of the light emitting diode; and a filtering layer disposed on the phosphor layer, wherein the filtering layer is a dual-band notch filtering layer or a triple-mode bandpass filtering layer. In addition, a backlight module and a display device using the aforementioned white light emitting diode are also disclosed.
    Type: Grant
    Filed: June 17, 2020
    Date of Patent: February 22, 2022
    Inventors: Chung-Hwa Lee, Jian-Ging Chen
  • Patent number: 11246498
    Abstract: A sensor includes a light emitting element, a photodetector element for receiving light emitted by the light emitting element, and a circuit board having the light emitting element and the photodetector element mounted thereon. A light emitting surface of the light emitting element is facing the circuit board which is provided with a light-transmitting portion for transmitting the light emitted by the light emitting element.
    Type: Grant
    Filed: December 16, 2015
    Date of Patent: February 15, 2022
    Assignee: KYOCERA Corporation
    Inventors: Yuji Masuda, Hiroyuki Mori
  • Patent number: 11251114
    Abstract: A semiconductor package includes: a substrate; a first dielectric layer over the substrate; a first bond pad and a second bond pad over the first dielectric layer, the first bond pad having a first sidewall facing the second bond pad; a second dielectric layer over the first and the second bond pads; and an opening through the second dielectric layer and extending from the first bond pad to the second bond pad, the opening including a first area over and exposing the first bond pad, where in a top view, the opening exposes a first segment of the first sidewall disposed between a first edge and a second edge of the first area that intersect the first sidewall, where the first segment of the first sidewall is between a second segment and a third segment of the first sidewall, the second segment being covered by the second dielectric layer.
    Type: Grant
    Filed: August 6, 2020
    Date of Patent: February 15, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shu-Jung Tseng, Shyue-Ter Leu
  • Patent number: 11251272
    Abstract: A method of forming a semiconductor structure includes forming an opening in a dielectric layer, forming a recess in an exposed part of a substrate, and forming a lattice-mismatched crystalline semiconductor material in the recess and opening.
    Type: Grant
    Filed: December 6, 2019
    Date of Patent: February 15, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jizhong Li, Anthony J. Lochtefeld
  • Patent number: 11251352
    Abstract: A wiring board according to one embodiment of the present disclosure includes: partitions each having insulating property; and conductive members that are respectively disposed in at least two adjacent regions among a plurality of regions partitioned by the partitions. Two of the conductive members respectively disposed in the adjacent regions are joined to each other through an opening formed on one of the partitions interposed between the two of the conductive members, to serve as part of a wiring.
    Type: Grant
    Filed: June 25, 2020
    Date of Patent: February 15, 2022
    Assignee: NICHIA CORPORATION
    Inventor: Yukitoshi Marutani
  • Patent number: 11244930
    Abstract: An electronic device including a driving circuit substrate and a plurality of light emitting units is provided. The driving circuit substrate includes a plurality of active elements, the light emitting units are disposed on the driving circuit substrate, each of the light emitting units is electrically connected to the corresponding active element, wherein one of the active elements provides a first current to the corresponding light emitting unit, such that lighting efficiency of the light emitting units are ranged from 70% to 100%.
    Type: Grant
    Filed: July 11, 2019
    Date of Patent: February 8, 2022
    Assignee: InnoLux Corporation
    Inventor: Shun-Yuan Hu
  • Patent number: 11239401
    Abstract: A semiconductor light-emitting device includes a substrate having a base, a conductive layer and an insulating layer, a semiconductor light-emitting element and a resin member. The base has a pair of base first side surfaces and a pair of base third side surfaces. The conductive layer includes a front-surface segment and a side-surface segment. The front surface segment includes a front-surface first part. The insulating layer includes an insulating-layer first part and an insulating-layer second part. The resin member covers the insulating-layer first part and the insulating-layer second part of the insulating layer. A first thickness of the insulating-layer first part is greater than a second thickness of the insulating-layer second part.
    Type: Grant
    Filed: July 20, 2020
    Date of Patent: February 1, 2022
    Assignee: ROHM CO., LTD.
    Inventors: Tomoichiro Toyama, Hideaki Anzai, Kenya Hashimoto, Ryo Yatagai
  • Patent number: 11233224
    Abstract: Provided is a display apparatus. The display apparatus includes a display module configured to define a display surface on a plane. The display module includes a display panel having a plurality of display elements configured to display an image on the display surface and a pattern layer having a plurality of diffraction patterns arranged at an interval on the display panel. The diffraction patters are arranged to diffract at least a portion of incident light. At least a portion of the diffraction patterns has a width different from that of each of remaining diffraction patterns.
    Type: Grant
    Filed: September 5, 2019
    Date of Patent: January 25, 2022
    Assignee: Samsung Display Co., Ltd.
    Inventors: Taeyong Eom, Yeri Jeong, Youngbae Jung
  • Patent number: 11233215
    Abstract: A display substrate, a manufacturing method thereof, and a display device are provided. The display substrate includes: a base substrate; an anode structure, disposed on the base substrate; a light emitting layer, disposed on a side of the anode structure away from the base substrate; and a cathode layer, disposed on a side of the light emitting layer away from the base substrate, the anode structure includes a reflective layer and an inorganic layer disposed on a side of the reflective layer away from the base substrate, the cathode layer includes a transflective layer, and the inorganic layer is configured to adjust a distance between the reflective layer and the transflective layer.
    Type: Grant
    Filed: November 24, 2017
    Date of Patent: January 25, 2022
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Can Zhang
  • Patent number: 11233170
    Abstract: A transfer-printable (e.g., micro-transfer-printable) device source wafer comprises a growth substrate comprising a growth material, a plurality of device structures comprising one or more device materials different from the growth material, the device structures disposed on and laterally spaced apart over the growth substrate, each device structure comprising a device, and a patterned dissociation interface disposed between each device structure of the plurality of device structures and the growth substrate. The growth material is more transparent to a desired frequency of electromagnetic radiation than at least one of the one or more device materials. The patterned dissociation interface has one or more areas of relatively greater adhesion each defining an anchor between the growth substrate and a device structure of the plurality of device structures and one or more dissociated areas of relatively lesser adhesion between the growth substrate and the device structure of the plurality of device structures.
    Type: Grant
    Filed: January 30, 2020
    Date of Patent: January 25, 2022
    Assignee: X Display Company Technology Limited
    Inventors: Brook Raymond, Christopher Andrew Bower, Matthew Meitl, Ronald S. Cok
  • Patent number: 11228012
    Abstract: A self light-emitting display device includes a substrate having a circuit board and a color filter pattern on the circuit board. The circuit board includes a driving thin-film transistor. The display device further includes a passivation film above the substrate, a color conversion pattern above the passivation film and overlapping the color filter pattern, and a light-emitting layer above the passivation film and the color conversion pattern. The light emitting layer includes a flat part and a convex part. The convex part is above the color conversion pattern and protrudes convexly relative to the flat part.
    Type: Grant
    Filed: September 27, 2019
    Date of Patent: January 18, 2022
    Assignee: LG Display Co., Ltd.
    Inventors: Seungbum Lee, Wonrae Kim, Sooin Kim, Younghoon Kim, Jungmin Yoon, Hyungyu Kim
  • Patent number: 11222937
    Abstract: A display unit includes: a drive wire; a planarization layer covering the drive wire and having a connection hole; a relay electrode provided on the planarization layer and configured to be electrically connected to the drive wire through the connection hole; a filling member made of an insulating material and provided in the connection hole; a first partition wall made of a same material as that of the filling member and covering an end of the relay electrode; a first electrode covering the filling member and configured to be electrically connected to the relay electrode; a second electrode facing the first electrode; and a functional layer located between the first electrode and the second electrode, the functional layer including a light-emitting layer.
    Type: Grant
    Filed: September 17, 2018
    Date of Patent: January 11, 2022
    Assignee: Sony Group Corporation
    Inventors: Shinichi Teraguchi, Eisuke Negishi, Shuji Kudo
  • Patent number: 11217721
    Abstract: Provided is a light-emitting device that includes a first electrode layer, a first conduction type layer, a second conduction type layer, an active layer, and a second electrode layer. The first conduction type layer includes a current injection region formed by the first electrode layer and a current non-injection region. A waveguide structure included in the first conduction type layer, the active layer, and the second conduction type layer includes a first region and a second region. The first region has a first waveguide that is the current injection region and the current non-injection region and has a first refractive index difference. The second region has a second waveguide arranged to be extended from the first waveguide to the first end and has a second refractive index difference greater than the first refractive index difference. The second waveguide has a region narrowing toward the first end.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: January 4, 2022
    Assignee: SONY CORPORATION
    Inventors: Kentaro Fujii, Tomoki Ono, Yoshiaki Watanabe
  • Patent number: 11217728
    Abstract: A semiconductor light emitting element includes: an n-type semiconductor layer provided on a substrate; an active layer provided in a first region of the n-type semiconductor layer and made of an AlGaN-based semiconductor material; a p-type semiconductor layer provided on the active layer; a first protective layer provided on the p-type semiconductor layer and made of silicon oxide (SiO2) or silicon oxynitride (SiON); a second protective layer provided to cover a top of the first protective layer, a second region on the n-type semiconductor layer different from the first region, and a lateral surface of the active layer and made of aluminum oxide (Al2O3), aluminum oxynitride (AlON), or aluminum nitride (AlN); a p-side electrode provided contiguously on the p-type semiconductor layer; and an n-side electrode provided contiguously on the n-type semiconductor layer.
    Type: Grant
    Filed: October 30, 2019
    Date of Patent: January 4, 2022
    Assignee: NIKKISO CO., LTD.
    Inventors: Noritaka Niwa, Tetsuhiko Inazu
  • Patent number: 11205734
    Abstract: Distributed Bragg reflectors are incorporated into the compositionally graded buffers of metamorphic solar cells, adding functionality to the buffer without adding cost. The reflection aids in collection in subcells that are optically thin due to low diffusion length, high bulk recombination, radiation hardness, partially-absorbing quantum structures, or simply for cost savings. Performance enhancements are demonstrated in GaAs subcells with QWs, which is beneficial when GaAs is not the ideal bandgap.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: December 21, 2021
    Assignees: Alliance for Sustainable Energy, LLC, California Institute of Technology
    Inventors: Ryan Matthew France, John Franz Geisz, Pilar Espinet-Gonzalez
  • Patent number: 11205677
    Abstract: A micro-LED device, a display apparatus and a method for manufacturing a micro-LED device are provided. The micro-LED device comprises: a growth substrate; a plurality of vertical micro-LEDs formed on the growth substrate; a first type electrode formed on top of each of the vertical micro-LEDs; and a second type electrode formed on side surface of each of the vertical micro-LEDs.
    Type: Grant
    Filed: January 24, 2017
    Date of Patent: December 21, 2021
    Assignee: Goertek, Inc.
    Inventors: Quanbo Zou, Peixuan Chen, Xiangxu Feng
  • Patent number: 11203715
    Abstract: The present invention provides a quantum dot (QD) composite material, a preparation method, and a semiconductor device. The method includes synthesizing a first compound at a predetermined position, synthesizing a second compound on the surface of the first compound, the second compound and the first compound having a same alloy composition or having different alloy compositions, and forming the QD composite material through a cation exchange reaction between the first compound and the second compound. The light-emission peak wavelength of the QD composite material experiences one or more of a blue-shift, a red-shift, and no-shift. The method uses the QD successive ionic layer adsorption and reaction (SILAR) synthesis method to precisely control layer-by-layer QD growth and the QD one-step synthesis method to form a composition-gradient transition shell.
    Type: Grant
    Filed: April 14, 2017
    Date of Patent: December 21, 2021
    Assignee: TCL TECHNOLOGY GROUP CORPORATION
    Inventors: Lei Qian, Yixing Yang, Zheng Liu
  • Patent number: 11201302
    Abstract: The embodiments of the disclosure provide a flexible display panel, including a flexible substrate, the flexible substrate including a plurality of cylindrical surface stretching bodies in an array, every two adjacent cylindrical surface stretching bodies being connected by their side edges, and a flexible device on the flexible substrate, the flexible device being conformal with the flexible substrate. The embodiments also provide a display device including the flexible display panel and a method for manufacturing the flexible display panel.
    Type: Grant
    Filed: April 24, 2019
    Date of Patent: December 14, 2021
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Hongwei Tian, Yanan Niu, Zheng Liu, Dong Li, Liangjian Li, Zunqing Song
  • Patent number: 11177465
    Abstract: Devices, structures, materials and methods for vertical light emitting transistors (VLETs) and light emitting displays (LEDs) are provided. In particular, architectures for vertical polymer light emitting transistors (VPLETs) for active matrix organic light emitting displays (AMOLEDs) and AMOLEDs incorporating such VPLETs are described. Porous conductive transparent electrodes (such as from nanowires (NW)) alone or in combination with conjugated light emitting polymers (LEPs) and dielectric materials are utilized in forming organic light emitting transistors (OLETs). Combinations of thin films of ionic gels, LEDs, porous conductive electrodes and relevant substrates and gates are utilized to construct LETs, including singly and doubly gated VPLETs. In addition, printing processes are utilized to deposit layers of one or more of porous conductive electrodes, LEDs, and dielectric materials on various substrates to construct LETs, including singly and doubly gated VPLETs.
    Type: Grant
    Filed: October 25, 2019
    Date of Patent: November 16, 2021
    Assignee: Atom H2O, LLC
    Inventor: Huaping Li
  • Patent number: 11165048
    Abstract: A display panel, a method of manufacturing the same and a display device are provided. Nano-array structures are produced on a surface of a black color resist unit of a color filter layer, so that a reflectance of the color filter layer is reduced because light is absorbed and diffuse-reflected through the nano-array structures, thereby increasing the contrast of the display panel.
    Type: Grant
    Filed: April 26, 2019
    Date of Patent: November 2, 2021
    Assignee: Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
    Inventor: Wenliang Gong
  • Patent number: 11156752
    Abstract: Provided is an optical filter including a first filter region including a first layer of a first refractive index and a plurality of first metal nanostructures in the first layer, and a second filter region including a second layer of a second refractive index and a plurality of second metal nanostructures in the second layer, wherein the first refractive index is different from the second refractive index.
    Type: Grant
    Filed: July 31, 2017
    Date of Patent: October 26, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Gyu Weon Hwang, Kyeong Seok Lee, Won Mok Kim
  • Patent number: 11152442
    Abstract: By using an a-Si layer with low electron mobility in a TFT for driving an organic EL display device, the present invention solves problems stemming from uneven laser irradiation and suppresses the occurrence of non-uniform color and luminance. In the present invention, a first conductor film (26a) forming a drain electrode and a second conductor film (25a) forming a source electrode are disposed such that respective portions (26a1 . . . , 25a1 . . . ) of the first conductor film (26a) and the second conductor film (25a) are arranged in an alternating manner along a prescribed direction.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: October 19, 2021
    Assignee: SAKAI DISPLAY PRODUCTS CORPORATION
    Inventors: Katsuhiko Kishimoto, Yukiya Nishioka
  • Patent number: 11152537
    Abstract: A light emitting diode having multiple tunnel junctions is provided. This comprises the common contact layer, the first and second tunnel junction layers respectively disposed on the bottom surface and the upper surface of the common contact layer, the first light emitting structure disposed on the bottom surface of the first tunnel junction layer and the second light emitting structure disposed on the upper surface of the second tunnel junction layer. Light emitting structures emitting blue and green light may be disposed above and below the common contact layer. By injecting holes into the first light emitting structure and the second light emitting structure through the common contact layer formed of the n-type semiconductor, current spreading effect is improved, leading to improved light emitting efficiency. Since the n-type semiconductor layer can be disposed on the upper surface exposed to the outside, risk of damage occurring in subsequent fabrication steps can be reduced.
    Type: Grant
    Filed: September 4, 2018
    Date of Patent: October 19, 2021
    Inventor: James Chinmo Kim
  • Patent number: 11152438
    Abstract: The present invention discloses an array substrate and a display panel. The array substrate comprises a substrate, an anode layer disposed on the substrate, and a first retaining wall disposed on the anode layer and around the display area. The anode layer is provided with a first stress buffer area corresponding to the first retaining wall, and the first stress buffer area is provided with a first via structure passing through the anode layer.
    Type: Grant
    Filed: October 15, 2019
    Date of Patent: October 19, 2021
    Assignee: Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
    Inventors: Jie Yang, Ming Zhang
  • Patent number: 11143802
    Abstract: [Object] To make it possible to improve viewing angle characteristics more. [Solution] Provided is a display device including: a plurality of light emitting sections formed on a substrate; and a color filter provided on the light emitting section to correspond to each of the plurality of light emitting sections. The light emitting sections and the color filters are arranged such that, in at least a partial region in a display surface, a relative misalignment between a center of a luminescence surface of the light emitting section and a center of the color filter corresponding to the light emitting section is created in a plane perpendicular to a stacking direction.
    Type: Grant
    Filed: April 21, 2020
    Date of Patent: October 12, 2021
    Assignee: Sony Group Corporation
    Inventor: Daisuke Ueda
  • Patent number: 11145788
    Abstract: The present invention relates generally to a micro LED transfer head transferring a micro light-emitting diode (micro LED) from a first substrate to a second substrate. More particularly, the present invention relates to a micro LED transfer head holding and transferring a micro LED in which holding portions and surrounding areas of the holding portions are configured of different materials.
    Type: Grant
    Filed: January 3, 2020
    Date of Patent: October 12, 2021
    Assignee: POINT ENGINEERING CO., LTD.
    Inventors: Bum Mo Ahn, Seung Ho Park, Sung Hyun Byun
  • Patent number: 11145798
    Abstract: Disclosed is a display apparatus comprising a plurality of pixels and a light emitting device on each of the plurality of pixels. The light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked on a bottom surface and a sidewall of the light emitting device. The sidewall of the light emitting device includes a first facet and a second facet adjacent to the first facet. A first angle is made between the bottom surface and the first facet. A second angle is made between the bottom surface and the second facet. The first facet and the second facet meet each other to define an edge. The edge extends from the bottom surface toward a top surface of the light emitting device.
    Type: Grant
    Filed: July 28, 2019
    Date of Patent: October 12, 2021
    Assignee: Seoul National University R&DB Foundation
    Inventors: Euijoon Yoon, Seungmin Lee, Jongmyeong Kim
  • Patent number: 11145744
    Abstract: In a semiconductor device including a nonvolatile memory, information of a memory transistor of an unselected bit is accidentally erased during information write operation. A well region is provided in a memory region of a bulk region defined in a SOI substrate. A memory transistor having an LDD region and a diffusion layer is provided in the well region. A raised epitaxial layer is provided on the surface of the well region. The LDD region is provided from a portion of the well region located directly below a sidewall surface of a gate electrode to a portion of the well region located directly below the raised epitaxial layer. The diffusion layer is provided in the raised epitaxial layer.
    Type: Grant
    Filed: April 19, 2018
    Date of Patent: October 12, 2021
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Shinichiro Abe, Takashi Hashimoto, Hideaki Yamakoshi, Yuto Omizu
  • Patent number: 11139442
    Abstract: Embodiments of the disclosed subject matter provide an emissive layer, a first electrode layer, a plurality of nanoparticles and a material disposed between the first electrode layer and the plurality of nanoparticles. In some embodiments, the device may include a second electrode layer and a substrate, where the second electrode layer is disposed on the substrate, and the emissive layer is disposed on the second electrode layer. In some embodiments, a second electrode layer may be disposed on the substrate, the emissive layer may be disposed on the second electrode layer, the first electrode layer may be disposed on the emissive layer, a first dielectric layer of the material may be disposed on the first electrode layer, the plurality of nanoparticles may be disposed on the first dielectric layer, and a second dielectric layer may be disposed on the plurality of nanoparticles and the first dielectric layer.
    Type: Grant
    Filed: March 10, 2020
    Date of Patent: October 5, 2021
    Assignee: Universal Display Corporation
    Inventors: Michael Fusella, Nicholas J. Thompson
  • Patent number: 11121338
    Abstract: The present invention provides a QD material, a preparation method, and a semiconductor device. The QD material includes at least one QD structural unit arranged sequentially along a radial direction of the QD material. Each QD structural unit has a gradient alloy composition structure with a changing energy level width along the radial direction or a homogeneous alloy composition structure with a constant energy level width along the radial direction. The disclosed QD material not only achieves higher light-emission efficiency of QD material, but also meets the comprehensive requirements of semiconductor devices and the corresponding display technologies on QD materials. Therefore, the disclosed QD material is a desired QD light-emitting material suitable for semiconductor devices and display technologies.
    Type: Grant
    Filed: April 14, 2017
    Date of Patent: September 14, 2021
    Assignee: TCL TECHNOLOGY GROUP CORPORATION
    Inventors: Yixing Yang, Zheng Liu, Lei Qian
  • Patent number: RE49047
    Abstract: A light emitting device includes a light emitting element, a terminal substrate and a fixing member. The light emitting element is a semiconductor laminate having a first semiconductor layer, a light emitting layer, and a second semiconductor layer that are laminated in that order, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. The terminal substrate includes a pair of terminals connected to the first electrode and the second electrode, and an insulator layer that fixes the terminals. At least a part of the outer edges of the terminal substrate is disposed more to a center of the light emitting device than the outer edges of the semiconductor laminate. The fixing member fixes the light emitting element and the terminal substrate.
    Type: Grant
    Filed: June 15, 2020
    Date of Patent: April 19, 2022
    Assignee: NICHIA CORPORATION
    Inventors: Ryoma Suenaga, Hiroto Tamaki