Incoherent Light Emitter Structure Patents (Class 257/79)
  • Patent number: 10727261
    Abstract: The present technology relates to an image pickup device and an electronic apparatus that are configured to enhance characteristics. A solid-state image pickup device includes a photoelectric conversion section that is arranged on a semiconductor substrate and configured to photoelectrically convert an incident light, a moth-eye section that includes recesses and projections formed on a surface on a light incident side in the semiconductor substrate and has, when a cross section approximately parallel to a direction toward the photoelectric conversion section from the light incident side is viewed, a recessed portion protruding toward the side of the photoelectric conversion section, the recessed portion having a curvature or a polygonal shape, and a region that is arranged adjacent to and opposite to the photoelectric conversion section of the moth-eye section and has a refractive index different from a refractive index of the semiconductor substrate.
    Type: Grant
    Filed: January 6, 2017
    Date of Patent: July 28, 2020
    Assignee: Sony Corporation
    Inventors: Satoe Miyata, Itaru Oshiyama
  • Patent number: 10714241
    Abstract: In one embodiment, an overvoltage protection device may include a metal oxide varistor (MOV) having a first surface and a second surface; a semiconductor substrate having a first outer surface and a second outer surface and comprising a semiconductor crowbar device comprising a plurality of semiconductor layers arranged in electrical series to one another, the semiconductor substrate being disposed on a first side of the metal oxide varistor; a conductive region disposed between the second surface of the MOV and the first outer surface of the semiconductor substrate; a first electrical contact disposed on the first surface of the MOV; and a second electrical contact disposed on the second outer surface of the semiconductor substrate.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: July 14, 2020
    Assignee: LITTELFUSE SEMICONDUCTOR (WUXI) CO., LTD.
    Inventors: Teddy C. T. To, ChuanFang Chin, Yaosheng Du
  • Patent number: 10712579
    Abstract: A vortex polarizer converts light having azimuthal polarization emitted at a light emitting surface of a light emitting diode (LED) into a converted light having linear polarization. The vortex polarizer includes a distribution of fast axes that vary as a function of azimuth angle. Each fast axis rotates a portion of the light having the azimuthal polarization to a portion of the converted light having linear polarization. The vortex polarizer may include linear photoalignment polymer (LPP) aligned to define the distribution of fast axes.
    Type: Grant
    Filed: September 18, 2018
    Date of Patent: July 14, 2020
    Assignee: Facebook Technologies, LLC
    Inventors: Christopher Percival, Yijing Fu
  • Patent number: 10714240
    Abstract: An overvoltage protection device (100) may include a metal oxide varistor (MOV) (102) having a first surface (114) and a second surface (116); a semiconductor substrate (202) having a first outer surface (126) and a second outer surface (128) and comprising a semiconductor crowbar device (104) comprising a plurality of semiconductor layers arranged in electrical series to one another, the semiconductor substrate (202) being disposed on a first side of the metal oxide varistor (102), a conductive region (124) disposed between the second surface (116) of the MOV (102) and the first outer surface (126) of the semiconductor substrate (202); a first electrical contact (120) disposed on the first surface (114) of the MOV (102); and a second electrical contact (122) disposed on the second outer surface (128) of the semiconductor substrate (202).
    Type: Grant
    Filed: August 13, 2015
    Date of Patent: July 14, 2020
    Assignee: Littlefuse Semiconductor (Wuxi) Co., Ltd.
    Inventors: Teddy C. T. To, Chuanfang Chin, Yaosheng Du
  • Patent number: 10712614
    Abstract: A color conversion panel includes a substrate and a red color conversion layer, a green color conversion layer, and a transmission layer which are disposed on the substrate. The transmission layer includes at least one of a pigment and a dye.
    Type: Grant
    Filed: September 8, 2016
    Date of Patent: July 14, 2020
    Assignee: Samsung Display Co., Ltd.
    Inventors: Kwang Keun Lee, Young Min Kim, Hae Il Park, Seon-Tae Yoon, Baek Hee Lee, Kun Hee Jo
  • Patent number: 10714555
    Abstract: A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer thickness part, and a third layer thickness part, a pixel electrode that is provided on the first insulation layer, a second insulation layer that covers a peripheral section of the pixel electrode, a light emission functional layer, a facing electrode, and a conductive layer that is provided on the first layer thickness part. The pixel electrode includes a first pixel electrode which is provided in the first layer thickness part, a second pixel electrode which is provided in the second layer thickness part, and a third pixel electrode which is provided in the third layer thickness part. The first pixel electrode, the second pixel electrode, and the third pixel electrode are connected to the transistor through the conductive layer.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: July 14, 2020
    Assignee: SEIKO EPSON CORPORATION
    Inventors: Takeshi Koshihara, Ryoichi Nozawa
  • Patent number: 10707368
    Abstract: A tandem solar cell structure is described with the following features: (a) Monolithic configuration with at least two different absorbers (104, 108) of different materials for photovoltaic energy conversion (b) an absorber (108) consisting of crystalline silicon (c) a charge carrier selective contact arranged on the side of the silicon absorber (108) directed to the adjacent absorber (104) (d) configuration of the charge carrier selective contact from a thin interface oxide 107 and an amorphous, partially crystalline or polycrystalline layer applied thereto, mainly consisting of silicon, either p (106) or n doped (201) The charge carrier selective contact made up of layers 107 and 106 or 201, respectively, ensures excellent surface passivation of the crystalline silicon absorber 108, as well as selective extraction of a charge carrier type from the latter over the entire surface. Thus, a vertical current flow is achieved, so that lateral transverse conductivity is not required in every sub-cell.
    Type: Grant
    Filed: November 17, 2016
    Date of Patent: July 7, 2020
    Assignee: INSTITUT FÜR SOLARENERGIEFORSCHUNG GMBH
    Inventor: Robby Peibst
  • Patent number: 10707286
    Abstract: An OLED device and a method of preparing the same are provided, the OLED device including: a substrate; a first source electrode on the substrate, the first source electrode having a first side surface; a first insulating layer on the first source electrode, the first insulating layer having a second side surface intersecting with an upper surface of the first source electrode and the first side surface of the first source electrode, with at least one of an angle between the first side surface and the upper surface of the substrate and an angle between the second side surface and the upper surface of the substrate being an acute angle; an active layer on the substrate, the active layer covering the first side surface and the second side surface; a gate insulating layer on the active layer; an anode on the gate insulating layer; a light emitting functional layer on the anode; and a cathode on the light emitting functional layer, the cathode including a first drain region covering the first insulating layer and
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: July 7, 2020
    Assignees: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Qinghe Wang, Dongfang Wang, Tongshang Su, Rui Peng, Leilei Cheng, Yang Zhang, Jun Wang, Guangyao Li, Liangchen Yan, Guangcai Yuan
  • Patent number: 10700156
    Abstract: In view of the problem that a reduced thickness of an EL film causes a short circuit between an anode and a cathode and malfunction of a transistor, the invention provides a display device that has a light emitting element including an electrode and an electroluminescent layer, a wire electrically connected to the electrode of the light emitting element, a transistor provided with an active layer including a source, a drain and a channel forming region, and a power supply line electrically connected to one of the source and the drain of the transistor, wherein the wire is electrically connected to the other of the source and the drain of the transistor, and the width of a part of the electrode in the vicinity of a portion where the electrode is electrically connected to the wire is smaller than that of the electrode in the other portion.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: June 30, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hajime Kimura
  • Patent number: 10693049
    Abstract: One embodiment relates to a light emitting device package having improved luminous flux, and a light emitting device package, according to one embodiment of the present invention, comprises: a light emitting device having an electrode pad arranged at a lower surface thereof; a wavelength conversion layer for covering four lateral surfaces of the light emitting device; a first reflective pattern for covering an upper surface of the light emitting device and three lateral surfaces of the light emitting device so as to expose the wavelength conversion layer of the one remaining lateral surface, which is a light emitting surface of the light emitting device; and a second reflective pattern arranged between the first reflective pattern and the upper surface of the light emitting device.
    Type: Grant
    Filed: October 26, 2016
    Date of Patent: June 23, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Keal Doo Moon, Dong Yong Lee, Sang Jun Lee
  • Patent number: 10692952
    Abstract: The present disclosure provides an OLED substrate and a display device. The OLED substrate includes a base substrate, and a thin-film transistor, a first electrode, and a light-emitting layer arranged in sequence on the base substrate, in which the OLED substrate further includes a light-shielding layer arranged between an active layer of the thin-film transistor and the first electrode.
    Type: Grant
    Filed: June 19, 2019
    Date of Patent: June 23, 2020
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Haixu Li, Zhanfeng Cao
  • Patent number: 10686294
    Abstract: A method of manufacturing a semiconductor element includes forming a first silicon oxide film on a semiconductor wafer under a first film forming condition; forming a second silicon oxide film on the first silicon oxide film under a second film forming condition, a density of the second silicon oxide film being lower than a density of the first silicon oxide film; coating, with a photoresist, a region including the second silicon oxide film; exposing the photoresist using a photomask having an aperture and being disposed such that at least a portion of an edge of the aperture is disposed on the second silicon oxide film; removing a portion of the photoresist to form a photoresist pattern that has an overhang shape in a cross-section of the photoresist pattern; forming an electrode film on a region including the photoresist pattern; and performing lift-off by removing the photoresist pattern.
    Type: Grant
    Filed: February 21, 2019
    Date of Patent: June 16, 2020
    Assignee: NICHIA CORPORATION
    Inventors: Yoshihiko Furukawa, Hiroyuki Deguchi
  • Patent number: 10672945
    Abstract: A method of manufacturing a light emitting device includes: a first wafer preparation step including preparing, on a first substrate, m first wafers (where m?2), each of the first wafers comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a second wafer preparation step including bonding a second substrate with the second semiconductor layer of a first of the m first wafers and then removing the first substrate from the first wafer, so as to form a second wafer in which the first semiconductor layer is exposed; and a first bonding step including bonding the first semiconductor layer exposed at the surface of the second wafer and the second semiconductor layer of a second of the m first wafers together using a light-transmissive conductive layer, and then removing a first substrate of the second of the m first wafers.
    Type: Grant
    Filed: August 28, 2018
    Date of Patent: June 2, 2020
    Assignee: NICHIA CORPORATION
    Inventor: Hirofumi Kawaguchi
  • Patent number: 10673003
    Abstract: A light-emitting diode chip includes a light-emitting epitaxial laminated layer including a first-type semiconductor layer, a second-type semiconductor layer, and an active layer therebetween, wherein the light-emitting epitaxial laminated layer has a first surface and an opposing second surface, and wherein the second surface is a light-emitting surface; a first electrical connection layer over the first surface of the light-emitting epitaxial laminated layer and having first geometric pattern arrays; a second electrical connection layer over the second surface of the light-emitting epitaxial laminated layer and having second geometric pattern arrays; and a transparent current spreading layer over a surface of the second electrical connection layer; wherein, when external power is connected, a horizontal resistance of a current passing through the transparent current spreading layer is less than a current passing through the second electrical connection layer.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: June 2, 2020
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Shu-fan Yang, Chun-Yi Wu, Chaoyu Wu, Duxiang Wang
  • Patent number: 10672947
    Abstract: A metal layer is formed by vapor deposition or sputtering on an AlN substrate. Since there are irregularities on the surface of the substrate, irregularities are also formed on the surface of the metal layer. Subsequently, irregularities on the surface of the metal layer are removed and flattened in a mirror state by grinding the surface of the metal layer. Then, a dielectric layer is formed on the metal layer by alternately forming a SiO2 film and a TiO2 film through CVD. Next, an electrode layer is formed in a predetermined pattern by vapor deposition and lift-off on the dielectric layer. Since the surface of the metal layer is flattened in a mirror state, reflectance is high on that surface. As a result, the emission efficiency of the light-emitting device can be improved.
    Type: Grant
    Filed: July 20, 2018
    Date of Patent: June 2, 2020
    Assignee: TOYODA GOSEI CO., LTD
    Inventor: Shingo Totani
  • Patent number: 10665648
    Abstract: An electroluminescent display device includes a substrate, a circuit device layer provided on the substrate and having a first contact hole, a first electrode provided on the circuit device layer, a bank provided on the first electrode and configured to define a first emission area comprising a first sub emission area for exposing a first portion of the first electrode, and a second sub emission area for exposing a second portion of the first electrode, a first sub emission layer provided in the first sub emission area, and a second sub emission layer provided in the second sub emission area, wherein an area between the first sub emission area and the second sub emission area is overlapped with the first contact hole of the circuit device layer.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: May 26, 2020
    Assignee: LG Display Co., Ltd.
    Inventors: SeungHan Paek, Hyunil Ko
  • Patent number: 10663817
    Abstract: An array substrate, a liquid crystal display panel and a liquid crystal display apparatus are provided. The array substrate comprising first substrate; thin film transistor and data line are positioned on first substrate, data line electrically connecting with source or drain of thin film transistor; blocking element stacking positioned on thin film transistor; first shielding electrode and second shielding electrode located on lateral side of data line which away first substrate, vertical projections of first shielding electrode and second shielding electrode on first substrate are respectively covering data lines, thin film transistor positioned between first shielding electrode and second shielding electrode; transverse electrode connecting between first shielding electrode and second shielding electrode, transverse electrode located on lateral side of thin film transistor which away first substrate, and at least partial of transverse electrode is stacked positioned on blocking element.
    Type: Grant
    Filed: December 6, 2017
    Date of Patent: May 26, 2020
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
    Inventor: Zhuming Deng
  • Patent number: 10658817
    Abstract: The disclosure relates to a Vertical Cavity Surface Emitting Laser (100) comprising a first electrical contact (105), a substrate (110), a first Distributed Bragg Reflector (115), an active layer (120), a second Distributed Bragg Reflector (130) and a second electrical contact (135). The Vertical Cavity Surface Emitting Laser comprises at least two current aperture layers (125) arranged below or above the active layer (120), wherein each of the current aperture layers (125) comprises one AlyGa(1?y)As-layer, wherein a first current aperture layer (125a) of the at least two current aperture layers (125) is arranged nearer to the active layer (120) as a second current aperture layer (125b) of the at least two current aperture layers (125), wherein the first current aperture layer (125a) comprises a first current aperture (122a) with a bigger size as a second current aperture (122b) of the second current aperture layer (125b). The disclosure also relates to a method of manufacturing such a VCSEL (100).
    Type: Grant
    Filed: October 23, 2018
    Date of Patent: May 19, 2020
    Assignee: TRUMPF PHOTONIC COMPONENTS GMBH
    Inventors: Philipp Henning Gerlach, Roger King
  • Patent number: 10655839
    Abstract: A light source unit disclosed in an embodiment of the invention includes: a first cover having an open region at an upper portion and a recess in which a lower portion is opened; a second cover coupled to the lower portion of the first cover; a light source module disposed between the first and second covers and having a circuit board and a light emitting device on the circuit board; a waterproof film disposed on the light emitting device and facing an upper surface of the circuit board; and first and second gaskets on the upper surface of the circuit board. The first cover and the second cover are coupled to each other by protrusions and grooves and are bonded to each other by a bonding portion.
    Type: Grant
    Filed: February 9, 2018
    Date of Patent: May 19, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Cheon Joo Kim, Do Hwan Kim, Tae Young Choi
  • Patent number: 10643980
    Abstract: A light-emitting device includes a light-emitting element, a supporting structure, a first wavelength conversion structure, and a light-absorbing layer. The light-emitting element includes a plurality of active stacks separated from each other, a first-type semiconductor layer continuously arranged on the plurality of active stacks, and a plurality of second-type semiconductor layers under the plurality of active stacks. The supporting structure is disposed on the light-emitting element and includes a first opening. The first wavelength conversion structure disposed in the first opening. The light-absorbing layer disposed on the top surface of the supporting structure.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: May 5, 2020
    Assignee: Epistar Corporation
    Inventors: Min-Hsun Hsieh, Hsin-Mao Liu, Ying-Yang Su
  • Patent number: 10644477
    Abstract: There is provided a light source device comprising a substrate; a semiconductor laser placed on the substrate; a side wall portion formed so as to surround the semiconductor laser; and a cover being translucent, configured to cover a space surrounded by the substrate and the side wall portion, wherein the side wall portion includes a lower surface connected to an upper surface of the substrate over a whole periphery, an upper surface connected to a lower surface of the cover over a whole periphery, and inner side surfaces inclined so that the space expands from a lower surface side to an upper surface side of the side wall portion, at least a part of the inner side surfaces serving as a reflection surface for reflecting a beam emitted from the semiconductor laser toward the cover, and a connecting portion where an upper surface of the substrate and a lower surface of the side wall portion are in contact with each other via a connecting layer is provided in a region corresponding to an upper surface of the sid
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: May 5, 2020
    Assignee: NICHIA CORPORATION
    Inventor: Tadaaki Miyata
  • Patent number: 10642390
    Abstract: A display device includes a circuit layer having a driving circuit layer with a plurality of clock signal lines, a touch detection unit having a touch detection part and a plurality of touch signal lines electrically connected to the touch detection unit, and a conductive portion disposed between the plurality of clock signal lines and the plurality of touch signal lines and configured to cover an overlapping area where the plurality of clock signal lines and the plurality of touch signal lines overlap.
    Type: Grant
    Filed: July 24, 2017
    Date of Patent: May 5, 2020
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jaehyun Lee, Keunlim Ku, Sanghyun Jun, Changyong Jung
  • Patent number: 10644211
    Abstract: Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: May 5, 2020
    Assignee: Micron Technology, Inc.
    Inventor: Michael J. Bernhardt
  • Patent number: 10636939
    Abstract: One embodiment provides a semiconductor device comprising: a light-emitting structure which comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer and also comprises first and second recesses which pass through the active layer from the second conductive semiconductor layer and extend to the first conductive semiconductor layer; a first electrode coming into contact with the first conductive semiconductor layer from the first recess; a second electrode coming into contact with the second conductive semiconductor layer; and a reflective layer formed in the second recess, wherein the second recess has an open lower part disposed on the downside of the second conductive semiconductor layer, an upper part disposed on the first conductive semiconductor layer, and a side part extending from the lower part to the upper part, and the reflective layer comprises a reflection part disposed inside the second recess and an extension part extending from the lower part
    Type: Grant
    Filed: June 9, 2017
    Date of Patent: April 28, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Su Ik Park, Youn Joon Sung, Yong Gyeong Lee, Min Sung Kim
  • Patent number: 10629776
    Abstract: A light emitting device includes a substrate, a light emitting unit disposed on the substrate, a metallic electrode unit, a metallic adhesion layer disposed on the first and second electrodes of the electrode unit, and a protective layer disposed on the adhesion layer. The first electrode is disposed on a portion of a first-type semiconductor layer of the light emitting unit. The second electrode is disposed on a second-type semiconductor layer of the light emitting unit disposed on a separated portion of the first-type semiconductor layer. The first and second electrodes are partially exposed by the protective layer and the adhesion layer that is partially exposed by the protective layer. A production method for the light emitting device is also disclosed.
    Type: Grant
    Filed: February 26, 2019
    Date of Patent: April 21, 2020
    Assignee: Xiamen San' an Optoelectronics Co., Ltd.
    Inventors: Anhe He, Su-Hui Lin, Kang-Wei Peng, Ling-Yuan Hong, Yu-Chieh Huang, Zhanggen Xia
  • Patent number: 10622510
    Abstract: A vertical type light emitting diode die and a method for fabricating the same is disclosed. A growth substrate is provided and an epitaxial layer is formed on the growth substrate. A metallic combined substrate is connected to the epitaxial layer. Then, the growth substrate is removed. Electrode units are formed on the top surface of the epitaxial layer. The epitaxial layer is divided into epitaxial dies according to the number of the plurality of electrode units. Each vertical type light emitting diode die formed in the abovementioned way includes the metallic combined substrate having a first metal layer and second metal layers. The first metal layer is combined with the two second metal layers by cutting, vacuum heating, and polishing, so as to enable the metallic combined substrate to have a high coefficient of thermal conductivity, a low coefficient of thermal expansion, and initial magnetic permeability.
    Type: Grant
    Filed: June 19, 2018
    Date of Patent: April 14, 2020
    Assignee: Ingentec Corporation
    Inventors: Ya-Li Chen, Chi-Ming Wang, Chia-Wei Tu, Cheng-Yu Chung, Hsiang-An Feng
  • Patent number: 10615313
    Abstract: A display device including a backplane, a plurality of light-emitting devices, a first distributed Bragg reflector layer and a second distributed Bragg reflector layer is provided. The light-emitting devices are disposed on the backplane. The first distributed Bragg reflector layer is disposed between the backplane and the light-emitting devices. The light-emitting devices are disposed between the first distributed Bragg reflector layer and the second distributed Bragg reflector layer. A projected area of the first distributed Bragg reflector layer on the backplane is larger than a projected area of one of the light-emitting devices on the backplane or a projected area of the second distributed Bragg reflector layer on the backplane is larger than a projected area of one light-emitting device on the backplane.
    Type: Grant
    Filed: February 25, 2019
    Date of Patent: April 7, 2020
    Assignee: PlayNitride Inc.
    Inventors: Yun-Li Li, Yu-Hung Lai, Tzu-Yang Lin
  • Patent number: 10613396
    Abstract: A display device according to an aspect of the present invention includes a first substrate, a second substrate, a liquid crystal layer, a plurality of signal lines, a plurality of switching elements, a plurality of connection terminals, and a plurality of lead lines. The plurality of lead lines include: first lead lines formed of a first conductive layer; second lead lines formed of a second conductive layer provided on a first insulating film covering the first lead lines; and third lead lines formed of a third conductive layer provided on a second insulating film covering the second lead lines. Among a plurality of conductive layers forming the switching elements, the lowest conductive layer is formed of the second conductive layer.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: April 7, 2020
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Tetsuo Fujita, Yoshihito Hara, Yukinobu Nakata
  • Patent number: 10615307
    Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher. In one embodiment, the semiconductor layer is used to form an optoelectronic device.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: April 7, 2020
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Rakesh Jain, Michael Shur
  • Patent number: 10608140
    Abstract: The escape surface of a light emitting element includes features that include sloped surfaces that have angles of inclination that are based on the direction of peak light output from the light emitting element. If the light output exhibits a number of lobes at different directions, the sloped surfaces may have a corresponding number of different angles of inclination. To minimize the re-injection of light into adjacent features, adjacent features may be positioned to avoid having surfaces that directly face each other. The features may be shaped or positioned to provide a pseudo-random distribution of inclined surfaces across the escape surface, and multiple roughening processes may be used.
    Type: Grant
    Filed: October 11, 2017
    Date of Patent: March 31, 2020
    Assignee: Lumileds LLC
    Inventor: Toni Lopez
  • Patent number: 10608149
    Abstract: A wavelength converting member comprising a first wavelength converting layer containing: a first fluorescent material having a light emission peak wavelength in a range of 620 nm or more and 660 nm or less; a second fluorescent material having a light emission peak wavelength in a range of 510 nm or more and 560 nm or less; and a resin, wherein the average particle diameter, as measured according to a Fisher Sub-Sieve Sizer method, of the first fluorescent material is in a range of 2 ?m or more and 30 ?m or less, wherein the second fluorescent material comprises a ?-SiAlON fluorescent material, the circularity of the ?-SiAlON fluorescent material is 0.7 or more, and the volume average particle diameter, as measured according to a laser diffraction scattering particle size distribution measuring method, of the ?-SiAlON fluorescent material is in a range of 2 ?m or more and 30 ?m or less, and wherein the thickness of the first wavelength converting layer is in a range of 50 ?m or more and 200 ?m or less.
    Type: Grant
    Filed: March 29, 2019
    Date of Patent: March 31, 2020
    Assignee: NICHIA CORPORATION
    Inventors: Kenichi Aoyagi, Takashi Kaide, Takuya Nakabayashi, Tetsuya Ishikawa, Shoji Hosokawa
  • Patent number: 10607889
    Abstract: Implementations of a method singulating a plurality of semiconductor die. Implementations may include: forming a pattern in a back metal layer coupled on a first side of a semiconductor substrate where the semiconductor substrate includes a plurality of semiconductor die. The method may include etching substantially through a thickness of the semiconductor substrate at the pattern in the back metal layer and jet ablating a layer of passivation material coupled to a second side of the semiconductor substrate to singulate the plurality of semiconductor die.
    Type: Grant
    Filed: September 19, 2018
    Date of Patent: March 31, 2020
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventor: Michael J. Seddon
  • Patent number: 10608050
    Abstract: A solid-state imaging device includes a first electrode, a second electrode, and a photoelectric conversion film that is formed between the first electrode and the second electrode and includes an organic semiconductor and an inorganic material.
    Type: Grant
    Filed: August 3, 2016
    Date of Patent: March 31, 2020
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Norikazu Nakayama, Hideki Ono, Yoshiaki Obana, Nobuyuki Matsuzawa
  • Patent number: 10597770
    Abstract: Provided is a line source that can achieve uniform film thickness distribution and also achieve high use efficiency of vapor deposition materials. A line source (10) has slit nozzles (1) having a slit nozzle's length-to-width ratio of 4 to 50, a width of 1 mm to 5 mm, and a depth of 5 mm to 20 mm.
    Type: Grant
    Filed: July 21, 2016
    Date of Patent: March 24, 2020
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Shinichi Kawato, Katsuhiro Kikuchi, Manabu Niboshi, Satoshi Inoue, Yuhki Kobayashi
  • Patent number: 10593910
    Abstract: An organic light-emitting component is disclosed. In an embodiment, the component includes an organic functional layer stack between two electrodes, wherein the organic functional layer stack comprises at least two organic light-emitting layers and at least one charge generation layer, and wherein at least one of the at least two organic light-emitting layers is part of the charge generation layer.
    Type: Grant
    Filed: February 11, 2016
    Date of Patent: March 17, 2020
    Assignee: OSRAM OLED GMBH
    Inventors: Dominik Pentlehner, Andreas Rausch, Arndt Jaeger
  • Patent number: 10593907
    Abstract: The invention relates to an optoelectronic semiconductor component (10) comprising a substrate (1), a first insulator layer (2), and a second insulator layer (3). Furthermore, the semiconductor component (10) comprises an organic semiconductor layer sequence (4) having an active area (4a) which, during operation, generates or receives light, a first electrode (5) and a second electrode (6), and encapsulation (7) which covers the organic semiconductor layer sequence (4) and the first insulator layer (2) completely and covers the second insulator layer (3) and the first electrode (5) or the second electrode (6) partially. Here, the first electrode (5) is arranged between the organic semiconductor layer sequence (4) and the first insulator layer (2), and the second electrode (6) is arranged on the organic semiconductor layer sequence (4), wherein the first electrode (5) and/or the second electrode (6) is/are at least partly arranged on the second insulator layer (3).
    Type: Grant
    Filed: April 28, 2016
    Date of Patent: March 17, 2020
    Assignee: OSRAM OLED GMBH
    Inventor: Philipp Schwamb
  • Patent number: 10586893
    Abstract: A method of manufacturing a light emitting diode (LED) is provided. The method includes forming an n-type semiconductor layer on a substrate, forming an n-type electrode in a first region of the n-type semiconductor layer, forming an active layer in a second region of the n-type semiconductor layer, the second region being a region other than the first region, forming a p-type semiconductor layer on the active layer, and forming a resistance layer by etching regions of the active layer and the p-type semiconductor layer.
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: March 10, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin-mo Kang, Ji-Hoon Kang, Seong-woo Cho, Ji-young Kang
  • Patent number: 10580941
    Abstract: An optoelectronic semiconductor component comprising a connection carrier with a mounting face and an electrically insulating base member. An optoelectronic semiconductor chip is arranged on the mounting face of the connection carrier. A radiation-transmissive body having four side faces is provided. The radiation-transmissive body surrounds the semiconductor chip in such a way that the radiation-transmissive body envelops outer faces of the optoelectronic semiconductor chip not facing the connection carrier in form-fitting manner. The radiation-transmissive body comprises at least one side face which extends at least in places at an angle of between 60° and 70° to the mounting face. The base member has a thickness which amounts to at most 250 ?m.
    Type: Grant
    Filed: October 19, 2017
    Date of Patent: March 3, 2020
    Assignee: OSRAM OLED GmbH
    Inventors: Michael Binder, Alexander Linkov, Thomas Zeiler, Peter Brick
  • Patent number: 10581012
    Abstract: The present disclosure provides an organic light-emitting diode and a method for manufacturing the same, a display substrate and a method for manufacturing the same, and a display device. The organic light-emitting diode comprises a first electrode, a second electrode, and an organic light-emitting layer arranged between the first electrode and the second electrode, in which the second electrode is arranged close to the light-emitting side of the organic light-emitting diode, the first electrode includes a reflective conductive layer, and a surface of the reflective conductive layer close to the second electrode has an uneven structure.
    Type: Grant
    Filed: August 2, 2018
    Date of Patent: March 3, 2020
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Kui Gong, Xianxue Duan, Jilong Li, Haifeng Cui
  • Patent number: 10580937
    Abstract: An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: March 3, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Chun-Yu Lin, Yung-Fu Chang, Rong-Ren Lee, Kuo-Feng Huang, Cheng-Long Yeh, Yi-Ching Lee, Ming-Siang Huang, Ming-Tzung Liou
  • Patent number: 10573777
    Abstract: The present invention discloses a vertical structure nonpolar LED chip on a lithium gallate substrate and a preparation method therefor. According to the method, LED epitaxial wafers are grown on a lithium gallate substrate, wherein the LED epitaxial wafers comprise a GaN buffer layer grown on the lithium gallate substrate, a non-doped GaN layer on the GaN buffer layer, an n-type doped GaN thin film on the non-doped GaN layer, an InGaN/GaN quantum well on the n-type doped GaN thin film and a p-type doped GaN thin film on the InGaN/GaN quantum well. Then, electrode patterns are prepared on the surfaces of the LED epitaxial wafers by the steps of spin coating, photoetching, developing and cleaning, and an electrode metal is sequentially deposited on the upper surfaces of the epitaxial wafers. Then, the LED epitaxial wafers are transferred to a copper substrate.
    Type: Grant
    Filed: November 15, 2016
    Date of Patent: February 25, 2020
    Assignee: South China University of Technology
    Inventors: Guoqiang Li, Wenliang Wang, Zichen Zhang
  • Patent number: 10573533
    Abstract: Various embodiments provide a method of reducing a sheet resistance in an electronic device encapsulated at least partially in an encapsulation material, wherein the method comprises: providing an electronic device comprising a multilayer structure and being at least partially encapsulated by an encapsulation material; and locally introducing energy into the multilayer structure for reducing a sheet resistance.
    Type: Grant
    Filed: August 29, 2018
    Date of Patent: February 25, 2020
    Assignee: Infineon Technologies AG
    Inventors: Edward Fuergut, Irmgard Escher-Poeppel, Stephanie Fassl, Paul Ganitzer, Gerhard Poeppel, Werner Schustereder, Harald Wiedenhofer
  • Patent number: 10573570
    Abstract: The object of the present invention is to provide a semiconductor device capable of reducing the influence of gas generated from a resin to which a fire retardant is not added, and a power conversion device including the semiconductor device. The semiconductor device according to the present invention includes: a semiconductor element disposed on an insulating substrate; a case disposed around an outer edge of the insulating substrate, the case including an opening facing the semiconductor element; a sealing resin sealing the semiconductor element in the case; and a lid closing the opening of the case, wherein the sealing resin does not contain a fire retardant, the lid contains the fire retardant, and a space is provided between the sealing resin and the lid.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: February 25, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventors: Daisuke Murata, Hiroshi Yoshida, Satoshi Kondo, Shinsuke Asada, Yusuke Kaji
  • Patent number: 10573826
    Abstract: An organic light emitting diode device comprising: a light emitting layer or layers combining both an emissive material comprising a boron subphthalocyanine, or first emitting layer component, that emits substantially orange light; and an emissive material emitting blue light, or second emitting layer component; wherein in combination, the first emitting layer component and the second emitting layer component, in combination, produces an overall white or near-white light emission.
    Type: Grant
    Filed: February 10, 2015
    Date of Patent: February 25, 2020
    Assignee: THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO
    Inventors: Timothy P. Bender, Trevor Plint, Jeffrey S. Castrucci
  • Patent number: 10574354
    Abstract: A hybrid integrated circuit (HIC) with a high bandwidth, low-power, miniaturized, optically coupled data communication interface, the interface and an arrangement including the HIC. Active and passive components and integrated circuit (IC) chips may be mounted on an HIC substrate and collecting data. The HIC is smaller than one millimeter square and communicates data externally through a microLED (?LED) array mounted on the HIC substrate and coupled to other HIC components. Each “on” ?LED consumes less than ten microwatts (10 ?W).
    Type: Grant
    Filed: December 12, 2017
    Date of Patent: February 25, 2020
    Assignee: International Business Machines Corporation
    Inventors: Stephen W. Bedell, Devendra K. Sadana
  • Patent number: 10571107
    Abstract: The present invention has as its object the provision of a fluorescence light source apparatus which provides a high emission efficiency of a fluorescent plate and a sufficiently high fluorescence intensity. According to the present invention, the fluorescence light source apparatus includes a fluorescent plate that receives excitation light to emit fluorescence, and a heat dissipation substrate that dissipates heat generated in the fluorescent plate, the fluorescent plate and the heat dissipation substrate being bonded via a solder layer, wherein the solder layer has a void ratio of not more than 75% and a maximum void diameter of not more than 0.4 mm. The solder layer may preferably have a void ratio of not more than 50% and a maximum void diameter of not more than 0.2 mm.
    Type: Grant
    Filed: February 10, 2016
    Date of Patent: February 25, 2020
    Assignee: USHIO DENKI KABUSHIKI KAISHA
    Inventors: Seiji Kitamura, Masaki Inoue
  • Patent number: 10573848
    Abstract: An organic light emitting diode display includes an organic light emitting display panel including an upper surface receiving first incident light from outside and a lower surface opposite to the upper surface, a light transmission preventing layer including a base layer and an adhesive layer which is between the base layer and the organic light emitting display panel and bonded thereto, the adhesive layer including a facing surface facing the lower surface and a plurality of patterns protruded from the facing surface toward the organic light emitting display panel to define a plurality of gaps between the lower surface and the facing surface. The adhesive layer includes a light blocking material blocking second incident light which passes through the organic light emitting display panel to the light transmission preventing layer from among the first incident light received by the upper surface of the organic light emitting display panel.
    Type: Grant
    Filed: June 15, 2017
    Date of Patent: February 25, 2020
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventor: Jae-lok Cha
  • Patent number: 10566322
    Abstract: An optoelectronic semiconductor device includes an epitaxial substrate and a plurality of microsized optoelectronic semiconductor elements. The microsized optoelectronic semiconductor elements are disposed separately and disposed on a surface of the epitaxial substrate. A length of a side of each of the microsized optoelectronic semiconductor elements is between 1 ?m and 100 ?m, and a minimum interval between two adjacent microsized optoelectronic semiconductor elements is 1 ?m.
    Type: Grant
    Filed: June 15, 2017
    Date of Patent: February 18, 2020
    Assignee: ULTRA DISPLAY TECHNOLOGY CORP.
    Inventor: Hsien-Te Chen
  • Patent number: 10560991
    Abstract: A light emitting device capable of reducing the number of parts while suppressing temperature rise of a light source board. Each of a plurality of LED units has an LED boards, and constant current boards. LED board is equipped with a blue LED, a red LED, and a green LED, LED board is equipped with a blue LED, a red LED, and a green LED. A constant board is equipped with a constant current circuit supplying constant current to the red LEDs and having the largest driving current. The constant current board is equipped with constant current circuits supplying constant current to the remaining blue LEDs, and the green LEDs.
    Type: Grant
    Filed: December 5, 2017
    Date of Patent: February 11, 2020
    Assignee: YAZAKI CORPORATION
    Inventors: Terumitsu Sugimoto, Koji Ikegaya
  • Patent number: 10553752
    Abstract: A light-emitting device includes a substrate including a top surface and a first side surface, wherein an area of the top surface is larger than an area of the first side surface, and a light-emitting structure on the first side surface of the substrate, the light-emitting structure having a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer, wherein the light-emitting structure emits a first light having a first peak wavelength, and wherein an emission area of a first light emitted through the top surface of the substrate is larger than an emission area of a first light emitted through the first side surface of the substrate.
    Type: Grant
    Filed: September 20, 2016
    Date of Patent: February 4, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam-goo Cha, Young-soo Park, Dong-hyun Cho