Abstract: A light emitting assembly comprising at least one of each of a solid state device and a thermal radiation source, couplable with a power supply constructed and arranged to power the solid state device and the thermal radiation source, to emit from the solid state device a first, relatively shorter wavelength radiation, and to emit from the thermal radiation source non-visible infrared radiation, and a down-converting luminophoric medium arranged in receiving relationship to said first, relatively shorter wavelength radiation, and the infrared radiation, and which in exposure to said first, relatively shorter wavelength radiation, and infrared radiation, is excited to responsively emit second, relatively longer wavelength radiation.

Abstract: A component module includes a component holder having a curved upper side, and a radiation-emitting component arranged in a curved shape on the upper side, wherein the component holder includes a heat-distributing region on the upper side, a neutral fiber running inside the component, an adhesive is planar and arranged between the radiation-emitting component and the upper side, and the adhesive fixes the radiation-emitting component on the upper side.

Abstract: The present disclosure discloses a display panel, a method for packaging the display panel, and a display device. A display panel comprising: a cover plate comprising a main body portion and a sidewall disposed at a periphery of the main body portion and surrounding the main body portion; a sealing film disposed opposite the cover plate and sealingly engaged with the sidewall of the cover plate to define a sealed package space; and an organic light emitting unit sealed within the package space.

Abstract: Wavelength conversion of primary light by means of a conversion body, a conversion device and an illumination apparatus is described herein. In some aspects, a conversion body may include a main body containing a wavelength-converting phosphor. The main body may have an irradiation surface to be irradiated by primary light. The conversion body may further include at least one conduction tract mounted on the main body outside the irradiation surface. The at least one conduction track may be electrically conductive in accordance with some aspects.

Abstract: An OLED display substrate, a method for manufacturing the same, and a display device are provided. The OLED display substrate includes multiple sub-pixels, and at least one sub-pixel includes: an anode, a cathode, and a light-emitting layer between the anode and the cathode. The anode includes: a light-reflective layer and a first transparent conductive layer covering the light-reflective layer, and the first transparent conductive layer is located between the light-reflective layer and the light-emitting layer. First vertical distances between first surfaces of the first transparent conductive layers of the subpixels of different colors facing the respective cathodes and the respective cathodes are the same, and second vertical distances between the first surfaces of the first transparent conductive layers of the subpixels of different colors and second surfaces of the respective light-reflective layers facing the respective cathodes are different.

Abstract: Methods for manufacturing a display device are provided. A representative method includes: providing a substrate having a plurality of sub-pixel locations; providing a carrier substrate supporting a plurality of light emitting diodes (LEDs); conducting a testing to at least one of the plurality of LEDs on the carrier substrate; transferring at least a portion of the plurality of LEDs from the carrier substrate to the substrate; fixing the portion of the plurality of LEDs to the substrate; providing an insulator over the substrate; and providing a first electrode electrically connected to at least one of the portion of the plurality of LEDs.

Abstract: An organic light-emitting diode includes a first electrode and a second electrode that face each other, an organic emission layer between the first electrode and the second electrode, and an inorganic hole injection layer between the first electrode and the organic emission layer. The inorganic hole injection layer includes oxide of a form A-B-O, including an element A and an element B. The element A is one of molybdenum (Mo) and tungsten (W). The element B is one of vanadium (V), niobium (Nb), and tantalum (Ta). An atom content (x) of the element B is greater than 0 and no more than 15 at % (0<x?15 at %) based on a total atom content of the inorganic hole injection layer.

Abstract: A semiconductor device includes a metal substrate including a through-hole aperture having a multi-size cavity including a larger area first cavity portion above a smaller area second cavity portion that defines a first ring around the second cavity portion, where the first cavity portion is sized with area dimensions to receive a semiconductor die having a top side with circuitry coupled to bond pads thereon and a back side with a metal (BSM) layer thereon. The semiconductor die is mounted top side up with the BSM layer on the first ring. A metal die attach layer directly contacts the BSM layer, sidewalls of the bottom cavity portion, and a bottom side of the metal substrate.

Abstract: A wavelength conversion element includes a fluorescent portion in which fluorescent particles are dispersed in a binder. The fluorescent portion has a first surface and a second surface which are opposite to each other in a thickness direction and excitation light is irradiated from a second surface side. A volume density of the fluorescent particles in a first portion is higher than that in a second portion where the fluorescent portion is divided in the thickness direction into two of the first portion on a first surface side and the second portion on the second surface side. A thickness of the fluorescent portion is at least 5 times as long as an average particle size of the fluorescent particles.

Abstract: A method of manufacturing a display device includes the following steps. A bonding pad is formed on a dielectric layer. A light-shielding material is formed on the dielectric layer. A temperature of the light-shielding material is increased such that the light-shielding material is cured into a light-shielding layer. During curing the light-shielding material into the light-shielding layer, the light-shielding material flows to and contacts a portion of a surface of the bonding pad. A light-emitting element is electrically connected to the bonding pad.

Abstract: [Problem] To provide a composition for forming a coating layer having excellent gas barrier performance and a method of forming the coating layer. [Means for Solution] A composition for forming a coating film comprising a specific silicon compound which reacts with a polysilazane by exposure, a polysilazane and an organic solvent, and a method for forming a coating layer comprising coating the composition on a substrate and exposing.

Abstract: A light-emitting device includes a light-emitting element having a first upper surface serving as a light-extracting surface. A first light-transmissive member includes an inorganic material and a wavelength conversion member and has a plate shape including a first lower surface bonded to the first upper surface and a second upper surface. An outer periphery of the first lower surface is outside of an outer periphery of the first upper surface. The second upper surface is opposite to the first lower surface in a height direction along a height of the light-emitting device. The second light-transmissive member includes an inorganic material and includes a second lower surface bonded to the second upper surface and a third upper surface opposite to the second lower surface in the height direction. An outer periphery of the third upper surface is within an outer periphery of the second upper surface.

Abstract: A display device includes a display panel, and a backlight unit which provides first light to the display panel, the first light being a combination of light having a first peak wavelength and light having a second peak wavelength. The display panel includes a wavelength conversion layer which converts a peak wavelength of the first light. The backlight unit includes laser diodes emitting the light having the second peak wavelength, and where the wavelength conversion layer includes quantum dots or phosphor.

Abstract: Wafer-level packaging method and package structure are provided. In an exemplary method, first chips are bonded to the device wafer. A first encapsulation layer is formed on the device wafer, covering the first chips. The first chip includes: a chip front surface with a formed first pad, facing the device wafer; and a chip back surface opposite to the chip front surface. A first opening is formed in the first encapsulation layer to expose at least one first chip having an exposed chip back surface for receiving a loading signal. A metal layer structure is formed covering the at least one first chip, a bottom and sidewalls of the first opening, and the first encapsulation layer, followed by an alloying treatment on the chip back surface and the metal layer structure to form a back metal layer on the chip back surface.

Abstract: A semiconductor light emitting device includes semiconductor light source, a resin package surrounding the semiconductor light source, and a lead fixed to the resin package. The lead is provided with a die bonding pad for bonding the semiconductor light source, and with an exposed surface opposite to the die bonding pad The exposed surface is surrounded by the resin package in the in-plane direction of the exposed surface.

Abstract: The present application relates to an array substrate including a display region and a non-display region. The non-display region encapsulates the display region. The non-display region includes a first region and a second region. The first region is configured to dispose trances. The second region is configured to dispose a driving chip assembly. The first region includes a first subregion. Ground wires are disposed in the first subregion. A number of layers of an end of the ground wires close to the second region is less than a number of layers of an end of the ground wires away from the second region.

Abstract: A mold is configured to resin-seal a semiconductor chip to form a semiconductor package. The mold has a first mold cavity and a second mold cavity formed in the bottom of the first mold cavity with a stepped portion between the two mold cavities. The two mold cavities are formed in succession by a high-speed rotary cutter having a downwardly tapered round cutting surface that imparts a corresponding taper to walls of the two mold cavities.

Abstract: A package includes a first electrode and a second electrode that are located at a bottom portion of a bottomed recess, and a first resin securing the first electrode and the second electrode in place and forming a part of the bottomed recess. The first electrode has a first outer lead having a first indentation at a tip in a plan view. The second electrode has a second outer lead having a second indentation at a tip in a plan view. The first resin has at least a portion between the first electrode and the second electrode located at the bottom portion of the bottomed recess, wall portions structuring lateral walls of the bottomed recess, and flange portions having the same thickness as a thickness of the first outer lead and different outward widths from the wall portions on both sides of the first outer lead in a plan view.

Abstract: A method of producing optoelectronic components includes providing a carrier; arranging optoelectronic semiconductor chips on the carrier; forming a conversion layer for radiation conversion on the carrier, wherein the optoelectronic semiconductor chips are surrounded by the conversion layer; and carrying out a singulation process to form separate optoelectronic components, wherein at least the conversion layer is severed.

Abstract: Disclosed is a method for fabricating a high-efficiency micro-LED module.

Abstract: A semiconductor package includes a first die, a second die, a molding compound and a redistribution structure. The first die has a first conductive pillar and a first complex compound sheath surrounding and covering a sidewall of the first conductive pillar. The second die has a second conductive pillar and a protection layer laterally surrounding the second conductive pillar. The molding compound laterally surrounds and wraps around the first and second dies, and is in contact with the first complex compound sheath of the first die. The redistribution structure is disposed on the first and second dies and the molding compound. The redistribution structure has a first via portion embedded in the first polymer dielectric layer and a second via portion embedded in the second polymer dielectric layer. A base angle of the first via portion is greater than a base angle of the second via portion.

Abstract: A two-stage singulation process is used in the fabrication of phosphor coated light emitting elements. Prior to the application of the phosphor coating, the individual light emitting elements are singulated using a laser dicing process; after application of the phosphor coating, the phosphor coated light emitting elements are singulated using a mechanical dicing process. Before laser dicing of the light emitting elements, the wafer is positioned on a piece of dicing- or die-attach-tape held by a frame; after laser dicing, the tape is stretched to provide space between the individual light emitting elements that allows for the wider kerf width of the subsequent mechanical dicing after application of the phosphor coating.

Abstract: The present disclosure relates to an organic light-emitting diode (OLED) display panel, including: a substrate, an OLED array layer configured on the substrate, a thin film packaging layer configured on the substrate and the OLED array layer, and a light extraction layer configured within the thin film packaging layer. The OLED array layer includes a plurality of OLED components arranged in matrix. The thin film packaging layer includes at least two inorganic barrier layers and at least one organic buffer layer. One side of the inorganic barrier layer facing away the substrate includes a plurality of pixel grooves corresponding to tops of each of the OLED components. The light extraction layer is configured within the pixel grooves, and the light extraction layer is covered by a flattening film configured to seal the light extraction layer within the pixel grooves, so as to flatten a surface of the inorganic barrier layer.

Abstract: Disclosed are a manufacturing method of a flexible panel, a flexible panel and a display device. The manufacturing method of a flexible panel includes: forming a deformable material layer on a base substrate, the deformable material layer includes a shape memory material; forming a flexible panel body at a side of the deformable material layer away from the base substrate; driving the deformable material layer to allow the flexible panel body to be at least partially stripped; and stripping the base substrate.

Abstract: A light emitting device includes a first type carrier transportation layer and an organic light emitting unit over the first type carrier transportation layer. The light emitting device further includes a second type carrier transportation layer over the organic light emitting unit, wherein the second type is opposite to the first type. At least one of the first type carrier transportation layer and the second type carrier transportation layer includes a metal element.

Abstract: A method of grinding a semiconductor nanocrystal-polymer composite, the method including obtaining a semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal and a first polymer, contacting the semiconductor nanocrystal-polymer composite with an inert organic solvent; and grinding the semiconductor nanocrystal-polymer composite in the presence of the inert organic solvent to grind the semiconductor nanocrystal-polymer composite.

Abstract: A monolithic display device including a plurality of first pixels capable of emitting light in a first wavelength range, and a plurality of second pixels capable of emitting light in a second wavelength range, the first pixels each including a gallium nitride light-emitting diode, and the second pixels each including an organic light-emitting diode.

Abstract: A component assembly includes a printed circuit board having an electronics component mounted on a first portion of a first face of the printed circuit board. A light emitting diode is mounted on a second portion of the first face. A light guide of a light transmissive polymeric material covers the body including the light emitting diode and the electronics component. The light guide includes: a cavity having the electronics component positioned within the cavity; a non-planar area of the light guide positioned above the cavity, the non-planar area mitigating against collapse of the light guide into the cavity; and a second cavity having the light emitting diode positioned within the second cavity; and a top plate of a polymeric light reflective material mounted onto the light guide directly above the light emitting diode.

Abstract: A vehicle lamp includes a plurality of light emitting modules that are vertically stacked with each other in a thickness direction, each of the light emitting modules including a substrate and a plurality of semiconductor light emitting devices located on the substrate, and partition walls located between the semiconductor light emitting devices, the partition walls passing through each of the light emitting modules in the thickness direction. The semiconductor light emitting devices provided in different light emitting modules among the light emitting modules are configured to emit light having different wavelengths.

Abstract: An LED display device including: a bottom case, electronic components, a circuit board, and an LED lamp group, with no mask covering above the LED lamp group. A cured resin layer is potted over the LED lamp group fixed on the circuit board, and the cured resin layer is adhered with a light-transmitting film, and the cured resin layer and the light-transmitting film together serves as a protective layer. The LED display device has advantages in adjusting and controlling the contrast, viewing angle, and color uniformity of the display device; the performance in moisture proof, windproof, rainproof, anti-corrosion, heat dissipation, and ultraviolet resistance is obviously improved, which can significantly reduce the lamp dysfunction rate and lamp collision rate of the display device, prevent the lamp bead from falling off and avoid other damage to the lamp bead, thereby making the maintenance procedure simpler.

Abstract: This light emitting device comprises a light emitting element and a light bundle control member. The light bundle control member includes an input surface, an output surface, a back surface, a leg portion, and a diffusion portion. An inner base portion on the radially inner side of the leg portion is positioned on the back side with respect to an outer base portion on the radially outer side. A radially outer side surface of the leg portion includes a partial output surface which is inclined to become closer to the front side with increasing distance from a central axis. Part of light emitted from the side surface of the light emitting element enters via the input surface, is emitted out of the partial output surface without passing through other surfaces, and again enters the light bundle control member from the diffusion portion.

Abstract: Provided are a polytetrafluoroethylene (PTFE) coating and a preparing method of the same. The PTFE coating includes: a nanodiamond powder whose surface is treated with a plasma using a hydrogen-containing reactive gas to remove amorphous carbon, the nanodiamond powder being ground in a commercially available state and having a surface to which a functional group is attached; and a PTFE solution dispersing the nanodiamond powder.

Abstract: The present disclosure relates to a method for manufacturing an OLED device, an OLED device and a display panel. The method for manufacturing the OLED device comprises: forming a first electrode layer on a substrate; forming at least one layer of inorganic film at a position on the first electrode layer corresponding to a pixel defining layer; breaking a first organic layer at an etching angle of the at least one layer of inorganic film when forming the first organic layer; forming the pixel defining layer on the inorganic film; forming the first organic layer on the first electrode layer, the inorganic film and the pixel defining layer; and forming a light emitting layer, a second organic layer and a second electrode layer in this order on the first organic layer.

Abstract: An array substrate, a method for manufacturing the same and a display panel are provided. The array substrate comprises: a substrate; a bare chip fixed on the substrate, the bare chip comprising pins; a buffer layer and a first metallic layer disposed sequentially on the bare chip, the first metallic layer comprising outer leads in one-to-one correspondence with the pins of the bare chip, the outer leads being connected electrically to the pins corresponding thereto of the bare chip, and the outer leads being electrically insulated from each other; a thin film transistor; and a first signal wire and a first connecting wire disposed in a same layer as a gate electrode of the thin film transistor, and a second signal wire and a second connecting wire disposed in a same layer as a source electrode and a drain electrode of the thin film transistor.

Abstract: A holding apparatus includes a support base configured to hold an electronic device, a driving device configured to drive the support base, a detecting device configured to detect a mounting state of the electronic device, and a control circuit coupled to the detecting device. The control circuit is configured to receive a detection result from the detecting device and control a power output of the driving device according to the detection result.

Abstract: An electrical joint structure including a substrate, a multi-layer bonding structure, and a blocking layer is provided. The multi-layer bonding structure is present on the substrate and includes a diffusive metal layer and a tin-rich layer. The diffusive metal layer includes a copper-tin alloy on a surface of the diffusive metal layer. The surface faces the substrate. A thickness of the copper-tin alloy is less than or equal to 2 ?m. The tin-rich layer is present on and in contact with the diffusive metal layer. The blocking layer is present between the multi-layer bonding structure and the substrate and at least in contact with a part of said copper-tin alloy, such that the multi-layer bonding structure is spaced apart from the substrate.

Abstract: There is provided a copper foil having a surface coating layer that can achieve a high bonding strength to a resin layer even if the copper foil has an extremely smooth surface such as one formed by vapor deposition, for example, sputtering and also has a desirable insulation resistance suitable for achieving a fine pitch in a printed wiring board. A surface-treated copper foil according to the present invention includes a copper foil and a silicon-based surface coating layer provided on at least one surface of the copper foil, the silicon-based surface coating layer being mainly composed of silicon (Si). The silicon-based surface coating layer has a carbon content of 1.0 to 35.0 atomic % and an oxygen content of 12.0 to 40.0 atomic % relative to a total content in 100 atomic % of carbon (C), oxygen (O) and silicon (Si) elements as measured by X-ray photoelectron spectroscopy (XPS).

Abstract: The present invention relates to a lighting device (12) comprising at least one light source (12a, 12b) adapted to emit white light and ultraviolet light, a collimator (18) adapted to collimate the white light, and a light exit window (16) through which the collimated white light and the ultraviolet light may pass into the ambient, wherein the lighting device is adapted to emit the collimated white light while spreading the ultraviolet light.

Abstract: The present disclosure discloses a white OLED device, which includes a substrate, an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer that are disposed to be sequentially laminated; the white OLED device further includes a reflective layer disposed on the electron injection layer or a reflective layer interposed between the substrate and the anode, wherein a material of the reflective layer has a selective reflection function on light having different wavelengths.

Abstract: A light emitting device includes a package having a recess, a light emitting element disposed in the recess, a translucent sealing material provided in the recess to encapsulate the light emitting element, and a film provided on the translucent sealing material. The film has a contact surface to contact the translucent sealing material and an outer surface opposite to the contact surface. The film includes a translucent base material and two or more layers of particles stacked in the translucent base material between the contact surface and the outer surface. At least one of the particles is exposed in a vicinity of the outer surface of the film.

Abstract: The present disclosure provides a display panel and a method for manufacturing the same. The method includes forming a base layer, a thin film transistor (TFT) device layer, an organic light-emitting diode (OLED) device layer, and a first inorganic material in turn on a substrate; modifying a surface of the first inorganic material to increase flowability of an organic buffer layer that is to be formed on a surface of the first inorganic layer; and forming the organic buffer layer and a second inorganic layer in turn on the first inorganic layer. According to the present disclosure, flowability of the organic material formed on the inorganic material layer is increased.

Abstract: A light emitting apparatus includes an electrically insulating base member; a first electrically conductive pattern portion and a second electrically conductive pattern portion formed on an upper surface of the base member; a plurality of intermediate electrically conductive pattern portions arranged between the first and second electrically conductive pattern portions; at least one light emitting device mounted on at least one of the intermediate electrically conductive pattern portions; a protection element mounted on the first and second electrically conductive pattern portions; and a resin portion disposed around the at least one light emitting device such that (i) the first and second electrically conductive pattern portions are partially covered by the resin portion and partially exposed from the resin portion, and (ii) the protection element is covered by the resin portion.

Abstract: According to one embodiment, an electronic apparatus includes a first casing, a second casing, and a sub-assembly. The sub-assembly includes a board, a component, and an integrally molded component. The board is positioned between the first casing and the second casing, and includes a first face, a second face opposite to the first face, and an outer rim between the first face and the second face. The component is mounted at least one of the first face and the second face. The integrally molded component consists essentially of an elastomer, and is in a state integrated with the board while sandwiching the board, and sandwiched between the first casing and the second casing.

Abstract: An inverse diode die has a high reverse breakdown voltage, a short reverse recovery time Trr, and is rugged in terms of reverse breakdown voltage stability over long term use in hard commutation applications. The die has an unusually lightly doped bottomside P type anode region and also has an N? type drift region above it. Both regions are of bulk wafer material. An N+ type contact region extends down into the drift region. A topside metal electrode is on the contact region. A P type silicon peripheral sidewall region laterally rings around the drift region. A topside passivation layer rings around the topside electrode. A bottomside metal electrode is on the bottom of the die. The die has a deep layer of hydrogen ions that extends through the N? drift region. The die also has a shallow layer of ions. Both ion layers are implanted from the bottomside.

Abstract: A light emitting device includes a light emitting surface, a back surface arranged on an opposite side of the light emitting surface, a mounting surface arranged between the light emitting surface and the back surface, and includes a light emitting element, a light shielding member, first and second terminal coating films, and first and second electrically conductive members. The light emitting element has first and second electrodes arranged on the second main surface. The light shielding member covers the lateral surface of the light emitting element and does not cover the first main surface of the light emitting element. The first and second terminal coating films are electrically connected to the first and second electrodes respectively, and arranged continuously on the back surface and the mounting surface of the light emitting device. The first and second electrically conductive members are in contact with the first and second electrodes respectively.

Abstract: Disclosed are a heat dissipating frame structure having higher heat dissipation efficiency than the prior arts and a fabricating method thereof. Namely, the heat dissipating frame structure comprises a metal plate assembly, a part of which contacting with a heating element, and a plastic composition combined with the metal plate assembly to through the metal plate assembly receive the heat generated from the heating element.

Abstract: A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.

Abstract: A light emitting device includes a substrate, a plurality of light emitting elements arranged in three or more rows on the substrate, and a light-transmissive member including a cylindrical lens portion having an array of three or more cylindrical lenses arranged parallel to each other along the rows of the light emitting elements so that each of the cylindrical lenses is on one of the three or more rows of light emitting elements. The rows of the light emitting elements are arranged with substantially uniform intervals. The cylindrical lens portion includes first cylindrical lens portions including at least cylindrical lenses at outermost sides of the array, and a second cylindrical lens portion arranged at an inner side of the first cylindrical lens portions and having a height greatest in the cylindrical lens portion.

Abstract: A method of forming a tier of an array of memory cells within an array area, the memory cells individually comprising a capacitor and an elevationally-extending transistor, the method comprising using two, and only two, sacrificial masking steps within the array area of the tier in forming the memory cells. Other methods are disclosed, as are structures independent of method of fabrication.

Abstract: A light emitter device contains a heater structure configured to emit light if a predefined current flows through the heater structure. The heater structure is arranged at a heater carrier structure. The light emitter device contains an upper portion of a cavity located vertically between the heater carrier structure and a cover structure. The light emitter device contains a lower portion of the cavity located vertically between the heater carrier structure and at least a portion of a carrier substrate. The heater carrier structure contains a plurality of holes connecting the upper portion of the cavity and the lower portion of the cavity. A pressure within the cavity is less than 100 mbar.