Abstract: According to one embodiment, a light-emitting unit which emits light, a wavelength conversion unit which includes a phosphor and which is provided on a main surface of the light-emitting unit, and a transparent resin which is provided on top of the wavelength conversion unit, are prepared. The transparent resin has a greater modulus of elasticity and/or a higher Shore hardness than the wavelength conversion unit.

Abstract: A method for manufacturing a light-emitting case includes forming a flat panel light emitting diode, and covering the flat panel light emitting diode with transparent plastic material. The transparent plastic material has properties of flexibility, high gas-resistance and water-resistance. When the light-emitting case is forced, the shape of the light-emitting case can be changed.

Abstract: A light emitting device includes: a laminated body including a first-conductivity type semiconductor layer, a light emitting layer, and a second-conductivity type semiconductor layer in this order; a contact layer provided in contact with the second-conductivity type semiconductor layer at least at a peripheral edge of the second-conductivity type semiconductor layer; a first electrode electrically connected to the first-conductivity type semiconductor layer; a second electrode provided nearer to the first-conductivity type semiconductor layer than the second-conductivity type semiconductor layer; and a conductor electrically connecting the second electrode and the contact layer to each other.

Abstract: Light emitting devices and methods of integrating micro LED devices into light emitting device are described. In an embodiment a light emitting device includes a reflective bank structure within a bank layer, and a conductive line atop the bank layer and elevated above the reflective bank structure. A micro LED device is within the reflective bank structure and a passivation layer is over the bank layer and laterally around the micro LED device within the reflective bank structure. A portion of the micro LED device and a conductive line atop the bank layer protrude above a top surface of the passivation layer.

Abstract: A light emitting device includes a base body forming a recess defined by a bottom surface and a side wall thereof, a conductive member whose upper surface being exposed in the recess and whose lower surface forming an outer surface, a protruding portion disposed in the recess, a light emitting element mounted in the recess and electrically connected to the conductive member, and a sealing member disposed in the recess to cover the light emitting element. The base body has a bottom portion and a side wall portion integrally formed of a resin, an inner surface of the side wall portion is the side wall defining the recess and has a curved portion, and the protruding portion is disposed in close vicinity to the curved surface. With this arrangement, a thin and small-sized light emitting device excellent in light extraction efficiency and reliability can be obtained.

Abstract: A barrier film composite includes a decoupling layer and a barrier layer. The barrier layer includes a first region and a second region that is thinner than the first region.

Abstract: A silicone resin composition contains a polysiloxane containing at least one pair of condensable substituted groups capable of condensation by heating and at least one pair of addable substituted groups capable of addition by an active energy ray.

Abstract: A semiconductor device includes: a sealing resin and a semiconductor element. The sealing resin includes a base resin and a curing agent. The base resin includes isocyanuric acid having an epoxy group. The curing agent includes an acid anhydride having an acid anhydride group. A mole ratio of the acid anhydride group to the epoxy group is not less than 0.67 and not more than 0.8. A semiconductor element is covered with the sealing resin.

Abstract: A radiation-emitting component includes a radiation source; a transparent material disposed in the beam path of the component and including a polymer material and filler particles, wherein the filler particles include an inorganic filler material and a phosphonic acid derivative or phosphoric acid derivative attached to a surface thereof and through which the filler particles are crosslinked with the polymer material.

Abstract: Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a protection film protecting an outer circumferential region of the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of an upper face of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of an upper face of the first metal layer other than a region in contact with the second metal layer. Concavities and convexities are formed in a region of the upper face of the n-type nitride semiconductor layer, the region being outside the region in which the n-electrode is provided and being outside the regions covered with the protection film.

Abstract: An LED package includes a first electrode, a second electrode, a reflecting cup connecting the first electrode and the second electrode, and an LED chip. The first electrode includes a first main portion and a first connecting portion extending outwardly from the first main portion. The first connecting portion has a first connecting face away from the first main portion. The second electrode includes a second main portion and a second connecting portion extending outwardly from the second main portion. The second connecting portion has a second connecting face away from the second main portion. The first main portion and the second main portion are embedded into the receiving cup, and the first connecting face of the first connecting portion and the second connecting face of the second connecting portion are exposed outside the receiving cup.

Abstract: A light emitting diode (LED) package includes a substrate with a flat top surface, an LED chip mounted on the substrate, and a group of blocking structure and encapsulation body. The LED chip electrically connects with the substrate. The blocking structure surrounds the LED chip. The encapsulation body covers the LED chip. A bottom of the encapsulation body is enclosed by the blocking structure; the encapsulation body has a light outputting surface, and an outer surface of the blocking structure is continuously connected with the light outputting surface. The light outputting surface has a semispherical profile. An angle between a normal line extending from the outer surface of the blocking structure and perpendicular to the substrate and a tangent line tangent to the light outputting surface at a point thereof adjacent to the outer surface is smaller than 60 degrees.

Abstract: A nitride semiconductor device includes a conductive oxide film with high reliability is provided. The nitride semiconductor device having a nitride semiconductor layer includes a conductive oxide film on the nitride semiconductor layer and a pad electrode on the conductive oxide film. The pad electrode includes a junction layer that contains a first metal and is in contact with the conductive oxide film, and a pad layer that contains a second metal.

Abstract: An illumination device includes a base, a light-emitting module, a first layer, and a second layer. The light-emitting module is disposed on the base for generating a progressive-type light-emitting intensity. The first layer encapsulates the light-emitting module. The second layer encloses the first layer. The second layer has a progressive-type thickness corresponding to the progressive-type light-emitting intensity, and both the progressive-type light-emitting intensity and the progressive-type thickness are decreased or increased gradually, thus the progressive-type light-emitting intensity can be transformed into the same light-emitting intensity through the progressive-type thickness of the second layer.

Abstract: Disclosed are a white LED lighting device and an optical lens used in it. The white LED lighting device comprises a white LED and an optical lens. The white LED includes: a LED chip which emits blue light; and a fluorescent material which is excited by emission light of the LED chip and converts a wavelength into fluorescence of a complementary color of blue. The optical lens is formed with a scattering light guide which is given uniform scattering power in terms of a volume. The scattering light guide includes scattering particles for the scattering efficiency in a short wavelength range of light to be higher than that in a long wavelength range of light.

Abstract: A light emitting diode assembly includes a base, a light emitting chip mounted on the base, an elastic lens covering the light emitting chip, two rotation members rotatably arranged on the base, and two stopper poles fixed on the base. The two rotation members are capable of driving the elastic lens to rotate with respect to the two stopper poles. The stopper poles compress the elastic lens to cause the elastic lens to deform resiliently when the elastic lens is rotated by the rotation members to engage with the stopper poles.

Abstract: A light-emitting diode (LED) package structure includes a lead frame, a LED chip, a package body, N opaque spacer and N+1 encapsulating glues. The LED chip is disposed on the lead frame; the package body covers the lead frame and exposes the LED chip. The package body has an accommodation space, divided by the N opaque spacers disposed on the LED chip into N+1 chambers. The N+1 encapsulating glues are filled into the N+1 chambers, where N is a natural number.

Abstract: An SMT LED device includes an LED and a circuit board supporting the LED. A pair of first solder pads are formed on the circuit board and spaced from each other. The LED includes two solder slugs extending downwardly from a bottom the LED. A positioning hole is formed at each first solder pad corresponding a position of a corresponding solder slug. A second solder pad is received in the positioning hole. Each solder slug is received in one corresponding positioning hole and electrically connected to corresponding first and second solder pads by a reflow soldering process. The present disclosure also provides a method for manufacturing the SMT LED device.

Abstract: A curable silicone composition comprising: (A) (A1) an organopolysiloxane having at least two alkenyl groups in a molecule and free of silicon-bonded hydroxyl groups or silicon-bonded hydrogen atoms, or a mixture of said component (A1) and (A2) a branched chain organopolysiloxane represented by an average unit formula; (B) an organopolysiloxane having at least two silicon-bonded hydrogen atoms in a molecule; (C) a diorganodialkoxysilane represented by a general formula; (D) a straight chain organosiloxane oligomer having at least one silicon-bonded hydroxyl group in a molecule and free of silicon-bonded hydrogen atoms; and (E) a hydrosilylation catalyst, can form a cured product which exhibits excellent initial adhesive properties and transparency and exhibits excellent adhesive durability and retention of transparency under conditions of high temperature and high humidity.

Abstract: An epoxy resin composition according to an embodiment of the present invention comprises an epoxy resin, 0.05-190 parts by weight, based on 10 parts by weight of the epoxy resin, of a polyester-based curing agent, wherein the epoxy resin comprises a triazine derivative epoxy compound and a siloxane compound containing an alicyclic epoxy group and a siloxane group.

Abstract: An object of the present invention is to provide a package from which a metal wiring and the like are difficult to be detached even when heat is generated from a semiconductor light-emitting element. This object is achieved with a package for a semiconductor light-emitting device comprising at least a molded resin containing (A) a SiH-containing polyorganosiloxane and (B) a filler, wherein an amount of SiH existing in the molded resin, after a heat treatment thereof at 200° C. for 10 minutes, is 20 to 65 ?mol/g.

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

Abstract: An optoelectronic semiconductor component comprising at least one radiation emitting semiconductor chip disposed in a recess of a housing base body, wherein the recess is bounded laterally by a wall surrounding the semiconductor chip and is at least partially filled with an encapsulant that covers the semiconductor chip and is well transparent to an electromagnetic radiation emitted by the semiconductor chip An inner side of the wall, bounding the recess, is configured such that, as viewed looking down on the front side of the semiconductor component, a subarea of the inner side is formed which extends ring-like all the way around the semiconductor chip and which is in shadow as viewed from the radiation emitting semiconductor chip and which is at least partially covered by encapsulant all the way around the semiconductor chip. A housing base body for such a semiconductor component is also specified.

Abstract: An organic light emitting diode (OLED) display includes: a substrate; an organic light emitting diode formed on the substrate; a first inorganic layer formed on the substrate and covering the organic light emitting diode; an intermediate layer formed on the first inorganic layer and covering an area relatively smaller than the first inorganic layer; and a second inorganic layer formed on the first inorganic layer and the intermediate layer, and contacting the first inorganic layer at an edge thereof while covering a relatively larger area than the intermediate layer. A third inorganic layer may be formed on the second inorganic layer so as to contact the second inorganic layer at an edge thereof. At least one of the first, second and third inorganic layers is formed by an atomic layer deposition (ALD) method.

Abstract: A light emitting device includes a first resin layer which is made of transparent resin and provided outside a solid-state light-emitting element mounted on a mounting substrate; and a second resin layer which is provided outside the first resin layer and made of transparent resin that contains a phosphor which is excited with a luminescence wavelength of the solid-state light-emitting element, wherein when the refractive index of the solid-state light-emitting element is set to be N1, the refractive index of the first resin layer is set to be N2, and the refractive index of the second resin layer is set to be N3, the relationship of N1?N2?N3?1 is established.

Abstract: A composite particle comprises inorganic compound particles that are derived from inorganic particle and are uniformly dispersed and sintered in a matrix phase composed of silica, or comprises silica particles that are uniformly dispersed and sintered in a matrix phase composed of said inorganic compound particles. The composite particle is prepared by sintering a mixture of (1) finely powdered silica having a BET specific surface area of 50 m2/g or greater, (2) an inorganic particle other than silica and (3) water at a temperature of 300° C. or higher to form a glass-like substance, and then crushing the glass-like substance. A spherical composite particle is prepared by melting and spheroidizing the mixture of (1)-(3) in a flame of 1,800° C. or higher.

Abstract: An light emitting diode (LED) module includes a circuit board, a set of LED chips formed on and electrically connected to the circuit board, and an encapsulant arranged on the circuit board and covering the LED chips, a set of first recesses defined in a top surface of the encapsulant.

Abstract: A composite oxide particle prepared from raw materials comprising: (1) a finely powdered silica having a BET specific surface area of 50 m2/g or greater or an alkoxysilane, and (2) a liquid metal alkoxide other than an alkoxysilane or a nano order metal oxide powder other than finely powdered silica, one of components (1) and (2) being a solid oxide and the other being a liquid alkoxide, wherein the composite oxide particle is prepared by mixing or kneading the raw materials to obtain a sol or gel-like substance, sintering the sol or gel-like substance at a temperature of 300° C. or higher to form a glass-like substance, and then crushing the glass-like substance is provided. Also, a resin composition containing the composite oxide particle, and a reflector for a light-emitting semiconductor device formed using the resin composition are provided.

Abstract: Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a III-V group compound semiconductor, a reflective layer comprising mediums, which are different from each other and alternately stacked under the light emitting structure, and a second electrode layer under the reflective layer.

Abstract: In a method for producing a semiconductor light emitting device: a semiconductor lamination of first and second semiconductor layers having different conductive types is formed; a portion of the semiconductor lamination is removed to expose an area of a surface of the first semiconductor layer; a conductor layer connecting the first and second semiconductor layers is formed; a first electrode is formed on the exposed areas of the first semiconductor layer and a second electrode is formed on an upper surface of the second semiconductor layer; a barrier layer covering at least one of the first and second electrodes is formed; and a connection part in the conductor layer connecting the first and second semiconductor layers is removed.

Abstract: The present disclosure relates generally to a light emitting diode assembly and a thermal control blanket. The light emitting diode assembly and the thermal control blanket have advantageous reflective and thermal properties.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure, a non-periodic light extraction pattern, and a phosphor layer. The light emitting structure includes a first conductive type semiconductor layer, a second conductive type semiconductor layer over the first conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The non-periodic light extraction pattern is disposed over the light emitting structure. The phosphor layer is disposed over the non-periodic light extraction pattern. The phosphor layer fills at least one portion of the non-periodic light extraction pattern.

Abstract: Provided is a curable composition and its use. The curable composition may exhibit excellent processibility and workability. The curable composition has excellent light extraction efficiency, crack resistance, hardness, thermal and shock resistance and an adhesive property after curing. The curable composition may provide a cured product exhibiting stable durability and reliability under severe conditions for a long time and having no whitening and surface stickiness.

Abstract: A light emitting diode (LED) with a micro-structure lens includes a LED die and a micro-structure lens. The micro-structure lens includes a convex lens portion, at least one concentric ridge structure surrounding the convex lens portion, and a lower portion below the convex lens portion and the at least one concentric ridge structure. The lower portion is arranged to be disposed over the LED die. A first optical path length from an edge of the LED die to a top center of the microstructure lens is substantially the same as a second optical path length from the edge of the LED die to a side of the micro-structure lens.

Abstract: An emitter package comprising a light emitting diode (LED) mounted to the surface of a submount with the surface having a first meniscus forming feature around the LED. A matrix encapsulant is included on the surface and covering the LED. The outer edge of the matrix encapsulant adjacent the surface is defined by the meniscus forming feature and the encapsulant forms a substantially dome-shaped covering over said LED. A method for manufacturing an LED package by providing a body with a surface having a first meniscus holding feature. An LED is mounted to the surface with the meniscus holding feature around the LED. A liquid matrix encapsulant is introduced over the LED and the surface, the first meniscus holding feature holding the liquid matrix encapsulant in a dome-shape over the LED. The matrix encapsulant is then cured.

Abstract: A silicone resin composition includes (1) an organopolysiloxane having at least two alkenylsilyl groups in one molecule, (2) an organopolysiloxane having at least two hydrosilyl groups in one molecule, (3) a hydrosilylation catalyst, and (4) a curing retarder, wherein the curing retarder contains tetraalkylammonium hydroxide.

Abstract: A wavelength-converted light emitting diode (LED) chip is provided. The wavelength-converted LED chip includes an LED chip and a wavelength-converted layer. The LED chip emits light in a predetermined wavelength region. The wavelength-converted layer is formed of a resin containing phosphor bodies of at least one kind which convert a portion of the light emitted from the LED chip into light in a different wavelength region. The wavelength-converted layer is formed on an upper surface of the LED chip, and has a convex meniscus-shaped upper surface.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface and a light emitting layer. An edge of a part of the first interconnect layer is exposed laterally from the first insulating layer and the second insulating layer.

Abstract: A lighting element, comprising: a first substrate; a first and second conductive elements located on the first substrate; a light-emitting element having first and second contacts that are both on a first surface of the light-emitting element, the first contact being electrically connected to the first conductive element, the second contact being electrically connected to the second conductive element, and the light-emitting element emitting light from a second surface opposite the first surface; a top layer adjacent to the second surface; and an affixing layer located between the first substrate and the top layer, the affixing layer affixing the top layer to the first substrate; and a heat spreading layer having a third surface and a fourth surface opposite the third surface, the heat spreading layer being affixed beneath the first flexible substrate at the third surface, wherein the flexible top layer is substantially transparent to light.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.

Abstract: A method of manufacturing an organic light emitting diode (OLED) display according to an exemplary embodiment includes: forming a display unit displaying an image and a driver positioned near the display unit to drive a light emitting element of the display unit in a lower mother substrate; forming a sealant and a plurality of bumps in an upper mother substrate; aligning the lower mother substrate and the upper mother substrate to face each other; melting and hardening the sealant to combine the lower mother substrate and the upper mother substrate; cutting the upper mother substrate; and cutting the lower mother substrate, wherein the cutting of the upper mother substrate is performed according to a first cutting line between the sealant and the bumps and a second cutting line corresponding to the bumps.

Abstract: The present invention relates to an epoxy resin composition for an optical semiconductor device having an optical semiconductor element mounting region and having a reflector that surrounds at least a part of the region, the epoxy resin composition being an epoxy resin composition for forming the reflector, the epoxy resin composition including the following ingredients (A) to (E): (A) an epoxy resin; (B) a curing agent; (C) a white pigment; (D) an inorganic filler; and (E) a specific release agent.

Abstract: A flexible display may suppress a generation of cracks in an inorganic layer and suppress the spread of cracks. A flexible display includes a flexible substrate and an inorganic layer formed on the flexible substrate. A display unit is formed on the inorganic layer. The display unit includes a plurality of pixels. Each pixel includes an organic light emitting diode. A thin film encapsulation layer covers the display unit. A crack suppressing layer is formed along the edge of the flexible substrate. The crack suppressing layer is disposed on the inorganic layer at an exterior side of the thin film encapsulation layer.

Abstract: An encapsulating sheet, for encapsulating an optical semiconductor element mounted on a board by a wire-bonding connection, includes an embedding layer for embedding the optical semiconductor element and a wire and a cover layer covering the embedding layer. The embedding layer and the cover layer contain a catalyst containing a transition metal and are prepared from a silicone resin composition that is cured by accelerating a reaction by the catalyst. The ratio of the concentration of the transition metal in the cover layer to that of the transition metal in the embedding layer is 1 or more. The length from an interface between the embedding layer and the cover layer to a portion of the wire that is positioned closest to the cover layer-side is 150 ?m or more.

Abstract: A diffusing lens includes a first surface and a second surface facing away from the first surface. The first surface has a first negative Fresnel structure for diffusing light from a point light source. The second surface has a second negative Fresnel structure aligning with the first negative Fresnel structure and for further diffusing the light of the point light source.

Abstract: A light emission diode (LED) assembly, comprising a LED die (10), a phosphor layer (12), and a filter layer (14), wherein said filter layer (14) is developed in such a manner that light rays with a wavelength of about 400 nm to 500 nm, preferably of about 420 nm to 490 nm, emitted from the LED die (10) are at least partially reflected depending on their emission angle to the normal on the filter layer (14). With the inventive LED assembly it is possible to provide a LED assembly which solves the yellow ring problem without a reduction of the efficiency of the LED assembly.

Abstract: An LED package and method thereof include an insulation plate, and a metal board disposed on the insulation plate and etched to form a cavity, wherein the metal board is etched to partially expose the insulation plate to form the cavity. The LED package and method also include an LED chip configured to be mounted inside the cavity, and an encapsulation member filling the cavity, wherein the encapsulation member comprises an epoxy resin. The LED package and method include a through-hole configured to be formed on the insulation plate where the LED chip is mounted. The through-hole enables portions of the LED chip to be exposed, and a metal configured to fill the through-hole to form an electrode to be electrically connected to the LED chip.

Abstract: Disclosed is a method of fabricating a light-emitting diode package, which comprises a light-emitting chip operative to emit light of a first wavelength range. The method comprises the steps of: dispensing a photoluminescent mixture on the light-emitting chip, the photoluminescent mixture being capable of absorbing a portion of light of the first wavelength range emitted from the light-emitting chip to re-emit light of a second wavelength range; partially curing the photoluminescent mixture by heating the photoluminescent mixture to a pre-curing temperature and then cooling the photoluminescent mixture to below the pre-curing temperature; and fully curing the photoluminescent mixture to harden the photoluminescent mixture. An apparatus for fabricating a light-emitting diode package is also disclosed.

Abstract: A light emission package includes multiple colored solid state emitters each having a different non-white dominant wavelength in the visible range, and at least one lumiphor arranged to receive emissions from at least one other solid state emitter, with each emitter arranged on or adjacent to a common submount. The at least one other emitter and lumiphor may be arranged in combination to emit white light. Each emitter is independently controllable, permitting color and/or color temperature of a lighting device to be varied during operation of the device. At least one white emitter may be combined with red, green, and blue LEDs.

Abstract: Provided is a curable epoxy resin composition capable of forming a cured product that has heat resistance, light resistance, and thermal shock resistance at high levels and particularly offers excellent reflow resistance after moisture absorption. The curable epoxy resin composition includes an alicyclic epoxy compound (A), a monoallyl diglycidyl isocyanurate compound (B) represented by Formula (1), a curing agent (C), and a curing accelerator (D). The composition includes methylnorbornane-2,3-dicarboxylic anhydride as an essential component of the curing agent (C) and has a succinic anhydride content of 0.4 percent by weight or less based on the total amount of the curing agent (C): wherein R1 and R2 are identical or different and each represent a hydrogen atom or an alkyl group having 1 to 8 carbon atoms.