Abstract: Provided is a curable epoxy resin composition capable of forming a cured product that has heat resistance, light resistance, and thermal shock resistance at high levels and particularly offers excellent reflow resistance after moisture absorption. The curable epoxy resin composition includes an alicyclic epoxy compound (A), a monoallyl diglycidyl isocyanurate compound (B) represented by Formula (1), a curing agent (C), and a curing accelerator (D). The composition includes methylnorbornane-2,3-dicarboxylic anhydride as an essential component of the curing agent (C) and has a succinic anhydride content of 0.4 percent by weight or less based on the total amount of the curing agent (C): wherein R1 and R2 are identical or different and each represent a hydrogen atom or an alkyl group having 1 to 8 carbon atoms.

Abstract: According to one embodiment, a semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer.

Abstract: A light emitting diode (LED) device and packaging for same is disclosed. In some aspects, the LED is manufactured using a vertical configuration including a plurality of layers. Certain layers act to promote mechanical, electrical, thermal, or optical characteristics of the device. The device avoids design problems, including manufacturing complexities, costs and heat dissipation problems found in conventional LED devices. Some embodiments include a plurality of optically permissive layers, including an optically permissive cover substrate or wafer stacked over a semiconductor LED and positioned using one or more alignment markers.

Abstract: Lighting devices including light-emitting diodes and associated devices, systems, and methods are disclosed herein. A lighting device configured in accordance with a particular embodiment includes a lighting-emitting diode and an optical component along a radiation path of the lighting-emitting diode. The optical component includes a color-converting material with walls defining a pattern, the walls extending generally entirely through a thickness of the color-converting material. A total surface area of the walls within a primary zone of the optical component is greater than a total surface area of color-converting features at a major side of the color-converting material. A method for making a lighting device in accordance with a particular embodiment includes combining an optical component and a light-emitting diode, and shaping a color-converting material of the optical component to have a thickness and a pattern of walls selected to control the color of light output from the lighting device.

Abstract: Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially encapsulated in a dielectric material.

Abstract: A lightweight flexible light-emitting device that is less likely to be broken is provided. The light-emitting device includes a first flexible substrate, a second flexible substrate, an element layer, a first bonding layer, and a second bonding layer. The element layer includes a light-emitting element. The element layer is provided between the first flexible substrate and the second flexible substrate. The first bonding layer is provided between the first flexible substrate and the element layer. The second bonding layer is provided between the second flexible substrate and the element layer. The first and second bonding layers are in contact with each other on the outer side of an end portion of the element layer. The first and second flexible substrates are in contact with each other on the outer side of the end portions of the element layer, the first bonding layer, and the second bonding layer.

Abstract: An LED package includes a chip carrier, an adhesive layer, one high-voltage LED die, and an encapsulating member. The chip carrier defines a receiving space. The adhesive layer is disposed in the receiving space and has a thermal conductivity of larger than or equal to 1 W/mK. The high-voltage LED die is attached to the adhesive layer to be received in the reflective space and has a top surface formed with a trench. The trench of the high-voltage LED die is disposed at an optical center of the receiving space. The encapsulating member encapsulates the high-voltage LED die and includes a plurality of diffusers. The trench is embedded with the encapsulating member and has a width ranging from 1 ?m to 10 ?m and a depth of less than or equal to 50 ?m.

Abstract: A lighting device includes an electrically activated emitter, a first layer that contains a first encapsulant material, and a second layer that contains a second encapsulant material, with a textured interface between the first layer and the second layer. Additional layers including further encapsulant materials and/or lumiphoric materials may be provided. Multiple textured interfaces may be provided. Textured interfaces may be arranged as lenses, including Fresnel lenses.

Abstract: Disclosed is a light emitting apparatus. The light emitting apparatus includes a package body; first and second electrodes; a light emitting device electrically connected to the first and second electrodes and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers; and a lens supported on the package body and at least a part of the lens including a reflective structure. The package body includes a first cavity, one ends of the first and second electrodes are exposed in the first cavity and other ends of the first and second electrodes are exposed at lateral sides of the package body, and a second cavity is formed at a predetermined portion of the first electrode exposed in the first cavity.

Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer.

Abstract: Various methods and systems are provided for related to organic light emitting diodes (OLEDs) having a microcavity In one embodiment, a white-light source includes a first microcavity organic light emitting diode (OLED) configured to emit a narrow spectrum of blue light, a second microcavity OLED configured to emit a narrow spectrum of green light, and a third microcavity OLED configured to emit a narrow spectrum of red light In another embodiment, a light source includes a plurality of OLEDs disposed on a glass substrate Each of the OLEDs is configured to emit light in substantially orthogonal to the glass substrate in a predefined spectrum Each of the OLEDs includes a semi-reflecting mirror, and an emitting layer, where the emitting layer in each OLED corresponds to a respective color of light emitted by the OLED.

Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of first three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer. A number of second three-dimensional nano-structures are located on the substrate, and a cross section of each of the three-dimensional nano-structures is M-shaped.

Abstract: An organic light-emitting display apparatus includes: a substrate; a pixel electrode disposed on the substrate; an intermediate layer that is disposed on the pixel electrode and includes an organic light-emitting layer; a facing electrode disposed on the intermediate layer; and a thin film encapsulating layer disposed on the facing electrode, wherein the thin film encapsulating layer includes: a first inorganic film and a second inorganic film, which are disposed on the facing electrode; a first organic film that is disposed between the first inorganic film and the second inorganic film and has a first thickness; and a second organic film that is disposed on the second inorganic film and has a second thickness greater than the first thickness.

Abstract: In one embodiment, a light source comprising a substrate, a die, a liquid encapsulant, an attachment member and a resilient cover configured to hold the liquid encapsulant is disclosed. At least a portion of the resilient cover is easily stretchable so as to absorb size increment of the liquid encapsulant due to thermal expansion. One other embodiment discloses a light-emitting device comprising a die, a liquid encapsulant and the resilient cover. The resilient cover may comprise a dome shaped portion, a vertical portion and a thermal joint portion. In another embodiment, a lighting apparatus having similar resilient cover is disclosed. The resilient cover may further comprise a thermal joint portion having first and second indentations for absorbing thermal expansion.

Abstract: A semiconductor light emitting device includes: a semiconductor chip having a growth surface that is a nonpolar or semipolar plane, and emitting polarized light; and a reflector having a reflective surface. At least part of light in a plane L90 is reflected off the reflective surface in a direction of a normal line to the growth surface, and an amount of light reflected off the reflective surface in the plane L90 in the direction of the normal line is larger than that of light reflected off the reflective surface on a plane L45 in the direction of the normal line, where the plane L90 represents a plane including the normal line and oriented at 90° to a polarization direction of the polarized light, and the plane L45 represents a plane including the normal line, and oriented at 45° to the polarization direction of the polarized light.

Abstract: An LAM/ICM assembly comprises an integrated control module (ICM) and an LED array member (LAM). The ICM includes interconnect through which power from outside the assembly is received. In a first novel aspect, active circuitry is embedded in the ICM. In one example, the circuitry monitors LED operation, controls and supplies power to the LEDs, and communicates information into and out of the assembly. In a second novel aspect, a lighting system comprises an AC-to-DC converter and a LAM/ICM assembly. The AC-to-DC converter outputs a substantially constant current or voltage. The magnitude of the current or voltage is adjusted by a signal output from the LAM/ICM. In a third novel aspect, the ICM includes a switching DC-to-DC converter. An AC-to-DC power supply supplies a roughly regulated supply voltage. The switching converter within the LAM/ICM receives the roughly regulated voltage and supplies a regulated LED drive current to its LEDs.

Abstract: A semiconductor light-emitting device includes: a semiconductor chip having a growth surface that is a nonpolar or semipolar plane, and emitting polarized light; and a reflector having a reflective surface. At least part of light in a plane L90 is reflected off the reflective surface in a direction of a normal line to the growth surface, and an amount of light reflected off the reflective surface in the plane L90 in the direction of the normal line is larger than that of light reflected off the reflective surface on a plane L45 in the direction of the normal line, where the plane L90 represents a plane including the normal line and oriented at 90° to a polarization direction of the polarized light, and the plane L45 represents a plane including the normal line, and oriented at 45° to the polarization direction of the polarized light.

Abstract: A light-emitting device and a method for manufacturing the light-emitting device is disclosed. Such a light-emitting device comprises a substrate, a plurality of cells disposed in the substrate, and a plurality of semiconductor dice, wherein each of the plurality of cells accommodates at least one of the plurality of dice. Each of the plurality of cells may be filled with an encapsulant, phosphor or a mixture of an encapsulant with phosphor to control light characteristics of the light-emitting device. In an alternative aspect, cells may be filled with an encapsulant, and comprise a transparent cover coated with or filled with phosphors to control light characteristics of the light-emitting device.

Abstract: A light emitting device having a plurality of light emitting cells is disclosed.

Abstract: Disclosed is a light emitting diode (LED) package having an array of light emitting cells coupled in series. The LED package comprises a package body and an LED chip mounted on the package body. The LED chip has an array of light emitting cells coupled in series. Since the LED chip having the array of light emitting cells coupled in series is mounted on the LED package, it can be driven directly using an AC power source.

Abstract: A light-emitting structure comprises a semiconductor light-emitting element which includes a first connection point and a second connection point. The light-emitting structure further includes a first electrode electrically connected to the first connection point, and a second electrode electrically connected the second connection point. The first electrode and the second electrode can form a concave on which the semiconductor light-emitting element is located.

Abstract: A light emitting device includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm and a fluorescent layer that is disposed on the light emitting element. The fluorescent layer includes a phosphor having a composition expressed by the equation, ((M1?x1Eux1)3?ySi13?zAl3+zO2+uN21?w), and an average particle diameter of 12 ?m or more, wherein in the equation, M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al, rare-earth elements, and IVB group elements, and x1, y, z, u, and w satisfy each of the inequalities simultaneously, that is to say each of the following inequalities is satisfied by the choice of values of the identified paramaters within the noted ranges of 0<x1<1, ?0.1<y<0.3, ?3<z?1, ?3<u?w?1.5, 2<u, w<21.

Abstract: A light emitting diode (LED) module including: a circuit board; at least one LED disposed on the circuit board; a molding cover spaced apart from the LED by a predetermined gap and covering upper and lower surfaces of the circuit board at an edge of the circuit board; and a circuit part positioned at the edge of the circuit board and driving the LED. The LED is centrally disposed on an upper surface of the circuit board.

Abstract: A light-emitting device having superior light extraction efficiency and method for producing a light emitting device are provided. A light emitting device includes a base body having wiring conductors, conductive adhesive member, especially an anisotropic conductive adhesive member, including electrically conductive particles mixed in a light transmissive resin, and a semiconductor light emitting element bonded on the wiring conductors via the anisotropic conductive adhesive. The anisotropic conductive adhesive member includes the electrically conductive particles with a concentration lower in a surrounding region around the semiconductor light emitting element than in a lower region located between the semiconductor light emitting element and the base body.

Abstract: In accordance with certain embodiments, regions of spatially varying wavelength-conversion particle concentration are formed over light-emitting dies.

Abstract: A light emitting unit array including a plurality of micro-light emitting diodes (?-LEDs) is provided. The micro-light emitting diodes are arranged in an array on a substrate, and each of the micro-light emitting diodes includes a reflection layer, a light emitting structure, and a light collimation structure. The light emitting structure is disposed on the reflection layer, and includes a first type doped semiconductor layer, an active layer, and a second type doped semiconductor layer that are stacked sequentially. At least a portion of the first type doped semiconductor layer, the active layer, and the second type doped semiconductor layer are sandwiched between the reflection layer and the light collimation structure.

Abstract: A light emitting device 1 according to an embodiment includes a planar alumina substrate, a semiconductor light-emitting element mounted on the alumina substrate, and a phosphor layer. The phosphor layer includes a silicone resin layer provided to cover an upper surface and a side surface of the semiconductor light-emitting element and a phosphor emitting visible light by being excited with light emitted from the semiconductor light-emitting element. The phosphor is dispersed in the silicone resin layer. The alumina substrate has a water absorption rate of 5% or more and 60% or less, and an adhesion strength between the alumina substrate and the silicone resin layer is 1 N or more.

Abstract: An encapsulation technique for leadless semiconductor packages entails: (a) attaching a plurality of dice (411) to die pads in cavities (41-45, 51-55) of a leadframe, the cavities arranged in a matrix of columns and rows; (b) electrically connecting the dice to a plurality of conducting portions (412-414) of the leadframe; and (c) longitudinally injecting molding material into the cavities along the columns via a plurality of longitudinal gates (46-49, 56-59) of the leadframe to package the dice in the cavities, the longitudinal gates situated between the cavities along the columns.

Abstract: A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.

Abstract: An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D1 between the first electrode and the second electrode, a third electrode formed on a portion of the first electrode and electrically connecting with the first electrode and a fourth electrode formed on a portion of the first electrode and on a portion of the second electrode, and electrically connecting with the second electrode, wherein there is a smallest distance D2 between the third electrode and the fourth electrode, and the smallest distance D2 is smaller than the smallest distance D1.

Abstract: A light emitting device and method of manufacture are described. In an embodiment, the light emitting device includes a micro LED device, a light pipe around the micro LED device to cause internal reflection of incident light from the micro LED device within the light pipe, and a wavelength conversion layer comprising phosphor particles over the light pipe. Exemplary phosphor particles include quantum dots that exhibit luminescence due to their size, or particles that exhibit luminescence due to their composition.

Abstract: A light emitting device having a structure in which oxygen and moisture are prevented from reaching light emitting elements, and a method of manufacturing the same, are provided. Further, the light emitting elements are sealed by using a small number of process steps, without enclosing a drying agent. The present invention has a top surface emission structure. A substrate on which the light emitting elements are formed is bonded to a transparent sealing substrate. The structure is one in which a transparent second sealing material covers the entire surface of a pixel region when bonding the two substrates, and a first sealing material (having a higher viscosity than the second sealing material), which contains a gap material (filler, fine particles, or the like) for protecting a gap between the two substrates, surrounds the pixel region. The two substrates are sealed by the first sealing material and the second sealing material.

Abstract: The present invention relates to light emitting diode (LED) packages and methods of manufacturing the same, and more particularly, to an LED package and a method of manufacturing the same that can reduce a variation of color coordinates of mass-produced LED packages.

Abstract: An organic EL device includes an element substrate; light-emitting elements which are provided on the element substrate and contain a light-emitting functional layer; a sealing layer which is provided to cover the light-emitting elements; and a color filter layer which is provided on the sealing layer and is formed of a resin material, in which the sealing layer includes a convex portion which is arranged on an outer edge portion to surround a center portion of the sealing layer and has a greater film thickness than that of the center portion.

Abstract: An organic light emitting diode (OLED) display device including a base substrate having a display area and a non-display area; OLEDs formed in corresponding sub-pixel regions defined by a bank insulating film in the display area of the base substrate; a pad part formed in the non-display area of the base substrate and configured to apply a driving signal to the OLEDs; a plurality of passivation films formed in the display area to cover the OLEDs, the plurality of passivation films including a first inorganic film, an organic film, and a second inorganic film, the plurality of passivation films being sequentially stacked. A region of an edge of the organic film that corresponds to a wire through which the driving signal is applied to the OLEDs from the pad part includes at least one groove formed at an inside area of the organic film.

Abstract: A component emitting light radiation comprising a vertical junction supported on a substrate, the face of the substrate opposite the face on which the junction is made is provided with at least one first conducting zone dedicated to electrical contact and a second conducting zone insulated from the substrate and from the first conducting zone, the second zone being dedicated to heat dissipation.

Abstract: A light emitting device according to one embodiment includes a board; a light emitting element mounted on the board, emitting light having a wavelength of 250 nm to 500 nm; a red fluorescent layer formed on the element, including a red phosphor expressed by equation (1), having a semicircular shape with a diameter r; (M1?x1Eux1)aSibAlOcNd??(1) (In the equation (1), M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al (Aliminum), rare-earth elements, and IVB group elements), an intermediate layer formed on the red fluorescent layer, being made of transparent resin, having a semicircular shape with a diameter D; and a green fluorescent layer formed on the intermediate layer, including a green phosphor, having a semicircular shape. A relationship between the diameter r and the diameter D satisfies equation (2): 2.0r(?m)?D?(r+1000)(?m).

Abstract: A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located on at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, the chip mounted on the base board and a transparent plate disposed on the wavelength converting layer including a spacer and a phosphor having a high density. The wavelength converting layer can be formed in a thin uniform thickness between the transparent plate and a top surface of the chip using the spacer so as to extend toward the transparent plate. The semiconductor light-emitting device can be configured to improve light-emitting efficiency of the chip by using the thin wavelength converting layer including the phosphor having a high density, and therefore can emit a wavelength-converted light having a high light-emitting efficiency from a small light-emitting surface.

Abstract: An organic light-emitting display device and a method of manufacturing the same are disclosed. The organic light-emitting display device includes: a substrate, a plurality of pixels on the substrate, a plurality of first electrodes, each disposed in each of the plurality of pixels, a pixel defining layer including a first pixel defining sub-layer disposed between each two adjacent first electrodes, and a second pixel defining sub-layer covering the first pixel defining sub-layer and surface edge portions of each two adjacent first electrodes, an intermediate layer disposed on each of the first electrodes and including an emission layer, and a second electrode configured to face the first electrodes.

Abstract: An optoelectronic semiconductor device is specified, comprising a multiplicity of radiation-emitting semiconductor chips (2), arranged in a matrix-like manner, wherein the semiconductor chips (2) are applied on a common carrier (1), at least one converter element (3) disposed downstream of at least one semiconductor chip (2) for converting electromagnetic radiation emitted by the semiconductor chip (2), at least one scattering element (4) situated downstream of each semiconductor chip (2) and serving for diffusely scattering electromagnetic radiation emitted by the semiconductor chip (2), wherein the scattering element (4) is in direct contact with the converter element (3).

Abstract: A light-emitting element disclosed in the present invention includes a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode. The present invention is characterized by the device structure in which the first layer comprising a hole-transporting material is doped with a hole-blocking material or an organic compound having a large dipole moment. This structure allows the formation of a high performance light-emitting element with high luminous efficiency and long lifetime. The device structure of the present invention facilitates the control of the rate of the carrier transport, and thus, leads to the formation of a light-emitting element with a well-controlled carrier balance, which contributes to the excellent characteristics of the light-emitting element of the present invention.

Abstract: A light emitting device that includes a substrate, a light emitting element and a sealing resin member. The substrate includes a flexible base, a plurality of wiring portions and a groove portion between the plurality of wiring portions. The flexible base extends in a first direction corresponding to a longitudinal direction of the substrate and the plurality of wiring portions are arranged on the base. The light emitting element is disposed on the substrate and electrically connected to the plurality of wiring portions. The sealing resin member seals the light emitting element and a part of the substrate. The sealing resin member is spaced apart from a first groove portion of the groove portion, the first groove portion extending in a second direction intersecting the first direction.

Abstract: A method for producing an electronic component comprising barrier layers for the encapsulation of the component comprises, in particular, the following steps: providing a substrate (1) with at least one functional layer (22), applying at least one first barrier layer (3) on the functional layer (22) by means of plasmaless atomic layer deposition (PLALD), and applying at least one second barrier layer (4) on the functional layer (22) by means of plasma-enhanced chemical vapor deposition (PECVD).

Abstract: A light-reflective anisotropic conductive adhesive and light-emitting device capable of maintaining luminous efficiency of a light-emitting element and preventing the occurrence of a crack to obtain conduction reliability are provided. The light-reflective anisotropic conductive adhesive contains a thermosetting resin composite, conductive particles, and a light-reflective acicular insulating particles. These light-reflective acicular insulating particles are inorganic particles of at least one type selected from the group including titanium oxide, zinc oxide, and titanate.

Abstract: A method of making a flexible organic electronic device includes forming a first portion including a first flexible substrate, wherein the first portion is formed under a first set of conditions to provide a barrier system, separately forming a second portion comprising at least one organic electronic device region deposited upon a second flexible substrate, wherein the second portion is formed under a second set of conditions, different from the first set of conditions, and placing the first portion over the second portion (although not necessarily in contact therewith) to cover the organic electronic device region. The organic electronic device region is not placed in physical contact with another solid material before placing the first portion over the second portion.

Abstract: A white light source includes a short wavelength LED and a phosphor layer that emits light at longer visible wavelengths. A dichroic reflector transmits the longer wavelength light, and reflects some LED light onto the phosphor such that as light travels from the LED to the dichroic reflector it does not pass through the phosphor. The LED may emit blue light, and the dichroic reflector may transmit a second portion of the LED light, such that the light source output light includes both the second portion of the LED light and the longer wavelength phosphor light. The LED may be mounted on a flexible substrate having a cavity region and neighboring region, the LED being mounted in the cavity region. A dielectric layer may be thinner in the cavity region than in the neighboring region, or a hole may extend completely through the dielectric layer in the cavity region.

Abstract: Provided are a light emitting device package, a method of manufacturing the light emitting device package, and a lighting system. The light emitting device package includes a package body, an electrode layer, a reflective layer, a nanopattern metal layer, a light emitting device, and a molding part. The electrode layer is disposed on the package body. The reflective layer is disposed over the electrode layer. The nanopattern metal layer is disposed over the reflective layer. The light emitting device is displayed over the electrode layer. The molding part is disposed over the light emitting device.

Abstract: An LED package includes a light transmissive encapsulation, an LED die embedded in the encapsulation from a bottom surface of the encapsulation, a positive electrode electrically connected to an anode of the LED die, and a negative electrode electrically connected to a cathode of the LED die. The encapsulation includes a light emitting surface opposite to the bottom surface thereof. The LED die includes a front surface for outputting light outward, and a back surface opposite to the front surface. The front surface is covered by the encapsulation and faces the light emitting surface of the encapsulation. The back surface is exposed outside. A light emitting device is provided by mounting the LED package to a circuit board. The circuit board has a heat conductor connecting with the LED die.

Abstract: A flexible OLED is provided on a flexible substrate. The flexible substrate has at least cut region. The substrate is expandable due to the separation of the flexible substrate at the cut region that is accommodated by bending of the flexible substrate. The substrate on which the flexible OLED is deposited on may be expanded without plastic deformation.

Abstract: An exemplary embodiment of the present invention discloses a light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.