Abstract: A long-life III nitride semiconductor light emitting device and a method of producing the same. A III nitride semiconductor light-emitting device includes an n-type semiconductor layer; a light emitting layer containing at least Al; and a p-type semiconductor layer obtained by sequentially stacking an electron blocking layer, a p-type cladding layer, and a p-type contact layer, in this order. The electron blocking layer is made of AlxGa1-xN (0.55?x?1.0), the p-type contact layer is made of AlyGa1-yN (0?y?0.1), the p-type cladding layer is made of AlzGa1-zN having an Al content z which gradually decreases over the whole thickness of the p-type cladding layer from the electron blocking layer side toward the p-type contact layer side, and the reduction rate of the Al content z of the p-type cladding layer in the thickness direction is 0.01/nm or more and 0.025/nm or less.

Abstract: A thin film transistor includes: a gate electrode; a gate insulating layer above the gate electrode; an oxide semiconductor layer disposed above the gate insulating layer; and a source electrode and a drain electrode disposed above the oxide semiconductor layer and electrically connected to the oxide semiconductor layer, wherein metallic elements included in the oxide semiconductor layer include at least indium (In), fluorine is included in a region which is an internal region in the oxide semiconductor layer and is close to the gate insulating layer, and a fluorine concentration of the region close to the gate insulating layer in the oxide semiconductor layer is higher than a fluorine of a contact region for the source electrode or the drain electrode in the oxide semiconductor layer.

Abstract: In one aspect, there is provided an apparatus including a light emitting diode. The apparatus may include a plurality of layers including a substrate layer, a buffer layer disposed on the substrate layer, a charge transport layer, a light emission layer, another charge transport layer, and/or a metamaterial layer. The other charge transport layer may have at least one channel etched into the other charge transport layer leaving a residual thickness of the other charge transport layer between a bottom of the etched channel and the light emission layer. A metamaterial layer may be contained in the at least one channel that is proximate to the residual thickness of the charge transport layer. The metamaterial may include a structure including at least one of a dielectric or a metal. The metamaterial may cause the light emitting diode to operate at higher frequencies and with higher efficiency.

Abstract: Semiconductor devices and fin field effect transistors (FinFETs) are disclosed. In some embodiments, a representative semiconductor device includes a group III material over a substrate, the group III material comprising a thickness of about 2 monolayers or less, and a group III-V material over the group III material.

Abstract: An organic light emitting display device and a light apparatus for vehicles using the same include a first layer on a first electrode, the first layer including a first emission layer and a first electron transport layer, a second layer on the first layer, the second layer including a second emission layer and a second electron transport layer, a second electrode on the second layer, and an N-type charge generation layer between the first layer and the second layer, wherein a low unoccupied molecular orbitals (LUMO) level of the first electron transport layer is higher than a LUMO level of a host included in the N-type charge generation layer.

Abstract: An objective is to increase the reliability of a light emitting device structured by combining TFTs and organic light emitting elements. A TFT (1201) and an organic light emitting element (1202) are formed on the same substrate (1203) as structuring elements of a light emitting device (1200). A first insulating film (1205) which functions as a blocking layer is formed on the substrate (1203) side of the TFT (1201), and a second insulating film (1206) is formed on the opposite upper layer side as a protective film. In addition, a third insulating film (1207) which functions as a barrier film is formed on the lower layer side of the organic light emitting element (1202). The third insulating film (1207) is formed by an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, an aluminum nitride film, an aluminum oxide film, or an aluminum oxynitride film.

Abstract: In a semiconductor device including an oxide semiconductor film, defects in the oxide semiconductor film are reduced. In addition, the electrical characteristics of a semiconductor device including an oxide semiconductor film are improved. Furthermore, the reliability of a semiconductor device including an oxide semiconductor film is improved. A semiconductor device including an oxide semiconductor layer and a pair of electrodes in contact with the oxide semiconductor layer and containing copper, aluminum, gold, or silver is provided.

Abstract: An object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. In a transistor including an oxide semiconductor film, the oxide semiconductor film is subjected to dehydration or dehydrogenation performed by heat treatment. In addition, as a gate insulating film in contact with the oxide semiconductor film, an insulating film containing oxygen, preferably, a gate insulating film including a region containing oxygen with a higher proportion than the stoichiometric composition is used. Thus, oxygen is supplied from the gate insulating film to the oxide semiconductor film. Further, a metal oxide film is used as part of the gate insulating film, whereby reincorporation of an impurity such as hydrogen or water into the oxide semiconductor is suppressed.

Abstract: Provided are an oxide semiconductor layer in which the number of defects is reduced and a highly reliable semiconductor device including the oxide semiconductor. A first oxide semiconductor layer having a crystal part is formed over a substrate by a sputtering method. A second oxide semiconductor layer is formed by a thermal chemical vapor deposition method over the first oxide semiconductor layer. The second oxide semiconductor layer is formed by epitaxial growth using the first oxide semiconductor layer as a seed crystal. A channel is formed in the second oxide semiconductor layer.

Abstract: A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. An n-type material is formed on or in the p-doped layer. The n-type layer includes ZnO. An aluminum contact is formed in direct contact with the ZnO of the n-type material to form an electronic device.

Abstract: An optoelectronic semiconductor component includes a layer sequence including a p-doped layer, an n-doped layer and an active zone that generates electromagnetic radiation arranged between the n-doped layer and the p-doped layer, wherein the n-doped layer includes at least GaN, an interlayer is arranged in the n-doped layer, wherein the interlayer includes AlxGa1-xN, wherein 0<x?1, and the interlayer includes magnesium.

Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

Abstract: A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. An n-type layer is formed on or in the p-doped layer. The n-type layer includes ZnO on the p-doped layer to form an electronic device.

Abstract: A compound including a ligand L according to Formula I: as well as, a first device and a formulation containing the same, are disclosed. In the compound including the Ligand L of Formula I: R1 and R2 are independently selected from group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, cyano, and combinations thereof; two adjacent substituents of R1 or R2 are optionally joined to form a fused ring; ligand L is coordinated to transition metal M having an atomic number greater than 40; R1 represent mono, di, tri, or tetra-substitution, or no substitution; R2 represent mono, di, or tri-substitution, or no substitution; and at least one substituent of R1 or R2 is cyano.

Abstract: Heteroleptic cyclometallated complexes having a 6-membered ring cyclometallated to the metal, as shown in Formula (I), are provided: wherein ring A and ring B are each independently a 5 or 6-membered carbocyclic or heterocyclic ring; wherein L1 is BR, NR, PR, O, S, Se, C?O, S?O, SO2, CRR?, SiRR?, or GeRR; wherein Z1 and Z2 are independently carbon or nitrogen; wherein at least one of Z1 and Z2 is carbon; wherein is a bidentate ligand selected from the group consisting of: wherein R1, R2, Ra, Rb, Rc, and Rd may represent mono, di, tri, or tetra substitution, or no substitution; wherein R1, R2, R, R?, Ra, Rb, Rc, and Rd are each independently selected from various substituents; and wherein n is 1 or 2. Devices, such as organic light emitting devices (OLEDs) that comprise phosphorescent light emitting materials are also provided.

Abstract: A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. A dielectric interlayer is formed on the p-doped layer. An n-type layer is formed on the dielectric interlayer, the n-type layer including a high band gap II-VI material to form an electronic device.

Abstract: Provided is an organic EL element having a high emission efficiency, a light emission life, and excellent high-temperature preservation stability. This organic electroluminescence element has at least one light-emitting layer between a positive electrode and a negative electrode. The light-emitting layer comprises at least one type of light-emitting dopant and at least three types of non-emitting organic materials represented by general formula (2); of the non-emitting organic materials, the material with the largest molecular weight has a molecular weight of 1,500 or less; and the minimum content of the non-emitting organic materials is 1 mass % or greater.

Abstract: The device for charge carrier modulation is a current-controlled component, which has semiconductor layers arranged on top of each other. The organic semiconductor layers arranged on top of each other are an electron transport layer, which is arranged between a first and a second hole transport layer, and/or a hole transport layer, which is arranged between a first and a second electron transport layer. The respective central layer is the modulation layer having a contact for a modulation voltage. By applying a modulation voltage, a modulation current flow is generated over the modulation layer. The modulation current flow influences the component current flow which flows from the first into the second hole or electron transport layer via the respective modulation layer.

Abstract: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.

Abstract: An optoelectronic device includes a carrier on which a semiconductor layer sequence is applied, said semiconductor layer sequence including an n-doped semiconductor layer and a p-doped semiconductor layer such that a p-n junction is formed which includes an active zone that generates electromagnetic radiation, wherein at least one of the n-doped semiconductor layer and the p-doped semiconductor layer includes a doped region having a first doping concentration greater than a second doping concentration in a surrounding area of the region in the semiconductor layer including the region.

Abstract: The present invention relates to a CZTSe-based composite thin film, a method for preparing the CZTSe-based composite thin film, a solar cell using the CZTSe-based composite thin film, and a method for preparing the solar cell using the CZTSe-based composite thin film.

Abstract: A method produces a multicolor LED display, the display including an LED luminous unit having a multiplicity of pixels. First subpixels, second subpixel and third subpixels contain an LED chip that emits radiation of a first color, wherein a first conversion layer that converts the radiation into a second color is arranged at least above the second subpixels and a second conversion layer that converts the radiation into a third color is arranged above the third subpixels. At least one process step is carried out in which the first or second conversion layer is applied or removed in at least one defined region above the pixels, wherein a portion of the LED chips is electrically operated, and wherein the region is defined by the radiation generated by the operated LED chips, generated heat or a generated electric field.

Abstract: Dual modulator displays are disclosed incorporating a phosphorescent plate interposed in the optical path between a light source modulation layer and a display modulation layer. Spatially modulated light output from the light source modulation layer impinges on the phosphorescent plate and excites corresponding regions of the phosphorescent plate which in turn emit light having different spectral characteristics than the light output from the light source modulation layer. Light emitted from the phosphorescent plate is received and further modulated by the display modulation layer to provide the ultimate display output.

Abstract: An organic compound having a high T1 level is provided. An element emitting phosphorescence in the blue and green regions is provided. An organic compound having a high glass-transition temperature is provided. A light-emitting element, a light-emitting device, an electronic appliance, or a lighting device having high heat resistance is provided. A light-emitting element includes at least a hole-transport layer, a light-emitting layer, and an electron-transport layer between an anode and a cathode. An anthracene compound represented by General Formula (G1) is contained in at least one of the hole-transport layer, the light-emitting layer, and the electron-transport layer.

Abstract: According to an embodiment of the invention there may be provided a die that may include (a) a first region of a first type; (b) a first conductor that contacts the first region; (c) a substrate having a substrate portion of the first type; wherein the substrate portion contacts the first region; an intermediate region of a second type; wherein the first type and the second type are selected from an n-type semiconductor and a p-type semiconductor; wherein the first type differs from the second type; (d) a second region of the second type; (e) a second conductor that contacts the second region; (f) a third region of the second type; (g) a third conductor that contacts the third region; (h) a fourth region of the first type; wherein the third region contacts the fourth region and does not contact the intermediate region; (i) a fourth conductor that contacts the intermediate region to form a first Schottky diode.

Abstract: A switching device provided herewith includes first to fourth semiconductor layers and a gate electrode. The second semiconductor layer is of a first conductive type or an un-dope type and located on the first semiconductor layer. A hetero junction is formed between the first and the second semiconductor layers. The third semiconductor layer is of a second conductive type and located on the second semiconductor layer. The fourth semiconductor layer is of a second conductive type and located on the third semiconductor layer. A hetero junction is formed between the third and the fourth semiconductor layers. The gate electrode electrically connected to the fourth semiconductor layer.

Abstract: A method for forming a transparent conducting oxide product layer. The method includes use of precursors, such as tetrakis-(dimethylamino) tin and trimethyl indium, and selected use of dopants, such as SnO and ZnO for obtaining desired optical, electrical and structural properties for a highly conformal layer coating on a substrate. Ozone was also input as a reactive gas which enabled rapid production of the desired product layer.

Abstract: A light emitting diode includes a first conductive type semiconductor layer; at least one InxGa1?xN layer (0<x<0.2) on the first conductive type semiconductor layer; an active layer directly on the at least one InxGa1?xN layer(0<x<0.2); a second conductive type semiconductor layer on the active layer; and a transparent ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer. At least one period of the active layer includes at least three layers including an InGaN and a GaN. The second conductive type semiconductor layer has a thickness of 750?˜1500?.

Abstract: According to one embodiment, a method for manufacturing a nitride semiconductor layer is disclosed. The method can include forming a first lower layer on a major surface of a substrate and forming a first upper layer on the first lower layer. The first lower layer has a first lattice spacing along a first axis parallel to the major surface. The first upper layer has a second lattice spacing along the first axis larger than the first lattice spacing. At least a part of the first upper layer has compressive strain. A ratio of a difference between the first and second lattice spacing to the first lattice spacing is not less than 0.005 and not more than 0.019. A growth rate of the first upper layer in a direction parallel to the major surface is larger than that in a direction perpendicular to the major surface.

Abstract: In certain embodiments, the invention provides metal complexes having Formula (I): wherein each Lx is independently a monodentate ligand, and any two adjacent Lx may optionally combine to form a bidentate ligand; wherein M1 is cobalt(I), rhodium(I), iridium(I), nickel(II), platinum(II), palladium(II), silver(III), gold(III), or copper(III); wherein m is a value from 1 to the maximum number of ligands that may be attached to M1; wherein m+n is the maximum number of ligands that may be attached to M1; wherein G1 is O or CR4R5; and R1 to R5 are various substituents, which can optionally combine with each other, among themselves, or with any Lx. In certain embodiments, the invention provides devices, such as organic light emitting devices, that comprise such metal complexes.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device which prevents an increase in driving voltage, and which has low threading dislocation density as a whole. The light-emitting device includes an embossed substrate. The substrate has, on a main surface thereof, a first region in which protrusions are arranged at a small pitch, and second regions in which protrusions are arranged at a large pitch. The second regions correspond to projection areas of a p-pad electrode and an n-pad electrode as viewed through the main surface of the substrate. The first region corresponds to a projection area, as viewed through the main surface of the substrate, of a region in which neither the p-pad electrode nor the n-pad electrode is formed.

Abstract: An enhancement-mode device comprises: a substrate, an epitaxial multilayer structure formed on the substrate, and a gate region formed on the epitaxial multilayer structure, where the epitaxial multilayer structure sequentially comprises from the substrate: a nucleation layer, a buffer layer, a heterojunction structure layer, a second gallium nitride layer, a nitride transition layer and a dielectric layer, where the heterojunction structure layer comprises a gallium nitride channel layer and a barrier layer which has a sandwich structure, and a middle layer of the sandwich structure is a first gallium nitride layer; and the gate region comprises a gate metal layer and a p-type nitride layer located under the gate metal layer, wherein the p-type nitride layer is embedded into the epitaxial multilayer structure, a bottom of the p-type nitride layer is in contact with the first gallium nitride layer of the sandwich structure.

Abstract: Provided is an organic material which can be employed for manufacturing an organic electroluminescent device having a long luminance half-lifetime. The organic material is a composition containing: a borane compound represented by Formula (B1): wherein three ArB1 represent an arylene group or a divalent aromatic heterocyclic group; and three XB1 represent an aromatic amino group, a monovalent aromatic heterocyclic group, an alkyl group, or a hydrogen atom; and a conjugated polymer compound represented by Formula (P1): wherein Arp1 represents an arylene group, with the proviso that Arp1 is different from Flup1; Flup1 represents a fluorenediyl group; Hetp1 represents a divalent aromatic heterocyclic group; Amp1 represents a divalent aromatic amine residue; nAr, nFlu, nHet and nAm are numbers representing molar ratios of Arp1, Flup1, Hetp1 and Amp1, respectively, and numbers satisfying 0.4?nFlu?1, 0?nAr?0.6, 0?nHet?0.6 and 0?nAm?0.6 when defining nAr+nFlu+nHet+nAm=1.

Abstract: An organic display panel having a high luminance, and including an organic light emitting element that includes a bottom electrode, a hole-injection layer, an organic light emitting layer, and a top electrode layered in the stated order on a substrate. The bottom electrode is composed of a material that is aluminum, silver, or an alloy including at least one of aluminum and silver. The hole-injection layer contains an oxide of a transition metal. The organic light emitting element further includes a mixed oxidized thin film interposed between and in contact with the bottom electrode and the hole-injection layer, the mixed oxidized thin film being composed of an oxidized mixture of the same material as the material in the bottom electrode and the same transition metal as the transition metal in the hole-injection layer.

Abstract: OLEDs having increased illumination are disclosed. The OLEDs have light emitting layers with periodic grain sizes. In particular, by depositing smaller particles at the boundaries of the emitting layers, the injection rate of carriers is improved in the emitting layers and by depositing larger particles in the middle of the emitting layers, the carrier density is increased, which increases electron-hole recombination. Increased recombination facilitates radiative emission of exitons from the OLED. As a result of the periodic grain size structure of the emitting layers, the electroluminescence and durability of the OLEDs are improved.

Abstract: The present invention relates to a laminate that includes: a foundation layer (12) that is a crystal having a wurtzite structure; and a MgXM1-XO film (14) having a hexagonal film formed on the foundation layer, where M is a 3d transition metal element, and 0<X<1. The present invention also relates to a crystal that is MgXM1-XO having a hexagonal structure, where M is a 3d transition metal element, and 0<X<1.

Abstract: A device includes a light emitting assembly including at least one light panel including at least one phosphorescent organic light emitting device. A total light emitting area of the light emitting assembly is greater than 1000 cm2. The device exhibits a luminous emittance of at least 7000 lm/m2 and a peak luminance of less than 5000 cd/m2. The light emitting assembly has a luminaire emissive utilization of at least 60 percent.

Abstract: There is provided a manufacturing method of an LED module including: forming an insulating film on a substrate; forming a first ground pad and a second ground pad separated from each other on the insulating film; forming a first division film that fills a space between the first and second ground pads, a second division film deposited on a surface of the first ground pad, and a third division film deposited on a surface of the second ground pad; forming a first partition layer of a predetermined height on each of the division films; sputtering seed metal to the substrate on which the first partition layer is formed; forming a second partition layer of a predetermined height on the first partition layer; forming a first mirror connected with the first ground pad and a second mirror connected with the second ground pad by performing a metal plating process to the substrate on which the second partition layer is formed; removing the first and second partition layers; connecting a zener diode to the first mirror

Abstract: A strain release layer adjoining the active layer in a blue LED is bounded on the bottom by a first relatively-highly silicon-doped region and is also bounded on the top by a second relatively-highly silicon-doped region. The second relatively-highly silicon-doped region is a sublayer of the active layer of the LED. The first relatively-highly silicon-doped region is a sublayer of the N-type layer of the LED. The first relatively-highly silicon-doped region is also separated from the remainder of the N-type layer by an intervening sublayer that is only lightly doped with silicon. The silicon doping profile promotes current spreading and high output power (lumens/watt). The LED has a low reverse leakage current and a high ESD breakdown voltage. The strain release layer has a concentration of indium that is between 5×1019 atoms/cm3 and 5×1020 atoms/cm3, and the first and second relatively-highly silicon-doped regions have silicon concentrations that exceed 1×1018 atoms/cm3.

Abstract: An illumination device includes a base, a light-emitting module, a first layer, and a second layer. The light-emitting module is disposed on the base for generating a progressive-type light-emitting intensity. The first layer encapsulates the light-emitting module. The second layer encloses the first layer. The second layer has a progressive-type thickness corresponding to the progressive-type light-emitting intensity, and both the progressive-type light-emitting intensity and the progressive-type thickness are decreased or increased gradually, thus the progressive-type light-emitting intensity can be transformed into the same light-emitting intensity through the progressive-type thickness of the second layer.

Abstract: A method of manufacture of an optoelectronic device includes the steps of: providing or forming a body of crystalline silicon containing substitutional carbon atoms, and irradiating said body of crystalline silicon with protons (H+) to create radiative defect centers in a photoactive region of the device, wherein at least some of said defect centers are G-center complexes having the form Cs—SiI—Cs, where Cs is a substitutional carbon atom and S¾ is an interstitial silicon atom. An optoelectronic device (FIG. 3) manufactured using the method is described.

Abstract: Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

Abstract: A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.

Abstract: The invention relates to a red phosphorescent compound represented by the following Formula (1) and an organic electroluminescent (EL) device using the same: wherein

Abstract: Various embodiments of light emitting devices with efficient wavelength conversion and associated methods of manufacturing are described herein. In one embodiment, a light emitting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region is configured to produce a light via electroluminescence. The light emitting device also includes a conversion material on the second semiconductor material, the conversion material containing aluminum gallium indium phosphide (AlGaInP) doped with an N-type dopant.

Abstract: A GaN-based semiconductor element which can suppress a leakage current generated during reverse bias application, an optical device using the same, and an image display apparatus using the optical device are provided. The GaN-based semiconductor element has a first GaN-based compound layer including an n-type conductive layer; a second GaN-based compound layer including a p-type conductive layer; and an active layer provided between the first GaN-based compound layer and the second GaN-based compound layer. In this GaN-based semiconductor element, the first GaN-based compound layer includes an underlayer having an n-type impurity concentration in the range of 3×1018 to 3×1019/cm3, and when a reverse bias of 5 V is applied, a leakage current density, which is the density of a current flowing per unit area of the active layer, is 2×10?5 A/cm2 or less.

Abstract: Disclosed is an organic light emitting material having the following chemical formula, for improving luminous efficiency, where R1, R2, R3 and R4 denote materials selected from an aromatic group with 6-24 carbon atoms (C6-C24), the group being independently substituted or unsubstituted, preferably, an aromatic group with 6-24 carbon atoms (C6-C24), the group consisting of trimethylsilane (TMS), CN, halogen (F, Cl, Br) alkyl groups with 1-4 carbon atoms (C1-C4).

Abstract: An organic electroluminescent device comprising: a pair of electrodes comprising an anode and a cathode, and one or more layers of organic compound arranged between the pair of electrodes, wherein the organic compound layer, or one or more of the organic compound layers, comprises a compound represented by a substituted imidazole. The substituents on the imidazole ring may be selected from a range of suitable substituents, including: substituted or unsubstituted aryl groups, substituted or unsubstituted heterocyclic groups, substituted or unsubstituted alkyl groups or cyano groups. In various aspects of the invention, at least one of the substituent groups may be a substituted or unsubstituted imidazole or thiophene group.

Abstract: A white organic light-emitting diode (WOLED) includes a transparent electrode, a blue-complementary light-emitting layer, a translucent electrode, a blue light-emitting layer, and a non-transparent electrode. The blue-complementary light-emitting layer is disposed on the transparent electrode. The transparent electrode and the translucent electrode include a first voltage. The blue light-emitting layer is disposed on the translucent layer. The non-transparent electrode is disposed on the blue light-emitting layer. The translucent electrode and the non-transparent electrode include a second voltage.

Abstract: Disclosed is a light emitting diode (LED) package having an array of light emitting cells coupled in series. The LED package comprises a package body and an LED chip mounted on the package body. The LED chip has an array of light emitting cells coupled in series. Since the LED chip having the array of light emitting cells coupled in series is mounted on the LED package, it can be driven directly using an AC power source.