Abstract: An organic light emitting device comprising, an anode, a cathode, and an emissive layer, located between the anode and the cathode, of a host compound, a first compound capable of phosphorescent emission at room temperature, and a second compound capable of phosphorescent emission at room temperature is provided. At least 95 percent of emission from the device is produced from the second compound when an appropriate voltage is applied across the anode and cathode.

Abstract: An edge lit illumination system is directed to providing backlighting utilizing a luminescent impregnated lightguide. The apparatus includes an LED radiation source providing a first radiation and a lightguide optically coupled to the LED radiation source including a luminescent material embedded or coated on an output surface of the lightguide designed to absorb the first radiation, and emit one or more radiations. The illumination system may further include additional optical components such as reflective layers, for directing radiation striking the back surfaces of the light guide back into the lightguide, as well as diffusion layers, UV reflectors, and polarizers.

Abstract: It is an object of the present invention to provide an organic light-emitting device which can emit white light by easily controlling dopant concentrations. The organic light-emitting device has a first electrode (112) and second electrode (111) which hold a light-emitting layer (113) in-between, wherein the light-emitting layer contains a host material (104), red-light-emitting dopant (105), green-light-emitting dopant (106) and blue-light-emitting dopant (107), the red-light-emitting dopant containing a first functional group for transferring the dopant toward the first electrode and the green-light-emitting dopant containing a second functional group for transferring the dopant toward the second electrode.

Abstract: Novel structures of photovoltaic cells (also treated as solar cells) are provided. The cells are based on nanometer-scaled wires, tubes, and/or rods, which are made of electronic materials covering semiconductors, insulators or metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells will have enormous applications in space, commercial, residential, and industrial applications.

Abstract: In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity; a well layer 1a made of a nitride semiconductor that includes In; and a barrier layer 2c that has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layer 12 becomes possible by arranging the barrier layer 2c nearest to the p-type layer side.

Abstract: Novel structures of photovoltaic cells (also treated as solar cells) are provided. The Cells are based on the nanometer-scaled wire, tubes, and/or rods, which are made of the electronics materials covering semiconductors, insulator or metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells can have also high radiation tolerant capability. These cells will have enormous applications such as in space, in commercial, residential and industrial applications.

Abstract: A III-nitride semiconductor optical device has a support base comprised of a III-nitride semiconductor, an n-type gallium nitride based semiconductor layer, a p-type gallium nitride based semiconductor layer, and an active layer. The support base has a primary surface at an angle with respect to a reference plane perpendicular to a reference axis extending in a c-axis direction of the III-nitride semiconductor. The n-type gallium nitride based semiconductor layer is provided over the primary surface of the support base. The p-type gallium nitride based semiconductor layer is doped with magnesium and is provided over the primary surface of the support base. The active layer is provided between the n-type gallium nitride based semiconductor layer and the p-type gallium nitride based semiconductor layer over the primary surface of the support base. The angle is in the range of not less than 40° and not more than 140°. The primary surface demonstrates either one of semipolar nature and nonpolar nature.

Abstract: Mg is doped in a ZnO-containing semiconductor layer in a concentration range from 1×1017 cm?3 to 2×1020 cm?3.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: A GaN substrate on which an epitaxially grown layer of good quality can be formed is obtained. A GaN substrate as a group III nitride substrate has a surface in which the number of chlorine atoms per square centimeter of the surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013, wherein a plane orientation of the surface is any of a (0001) plane, a (11-20) plane, a (10-12) plane, a (10-10) plane, a (20-21) plane, a (10-11) plane, a (11-21) plane, a (11-22) plane, and a (11-24) plane of a wurtzite structure.

Abstract: The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a metallic protective film layer with a thickness of at least 10 microns may be formed on the lateral and/or bottom sides of the vertical GaN LED. Further, a metallic substrate may be used instead of a sapphire substrate. A metallic support layer may be formed to protect the element from being distorted or damaged. Furthermore, a P-type electrode may be partially formed on a P—GaN layer in a mesh form.

Abstract: Provided are a polyvinyl pyrrole host material emitting highly efficient phosphorescence, a luminescent layer using the material, and an organic electroluminescent display device. The polyvinyl pyrrole host material shows highly efficient luminescence having improved energy transfer, and thus is useful for an organic electroluminescent display device and other various light emitting devices.

Abstract: The present GaN substrate can have an absorption coefficient not lower than 7 cm?1 for light having a wavelength of 380 nm and light having a wavelength of 1500 nm, an absorption coefficient lower than 7 cm?1 for at least light having a wavelength not shorter than 500 nm and not longer than 780 nm, and specific resistance not higher than 0.02 ?cm. Here, the absorption coefficient for light having a wavelength not shorter than 500 nm and not longer than 780 nm can be lower than 7 cm?1. Thus, a GaN substrate having a low absorption coefficient for light having a wavelength within a light emission wavelength region of a light-emitting device and specific resistance not higher than a prescribed value and being suitable for the light-emitting device is provided.

Abstract: A light emitting diode (LED) having a modulation doped layer. The LED comprises an n-type contact layer, a p-type contact layer and an active region of a multiple quantum well structure having an InGaN well layer. The n-type contact layer comprises a first modulation doped layer and a second modulation doped layer, each having InGaN layers doped with a high concentration of n-type impurity and low concentration of n-type impurity InGaN layers alternately laminated. The InGaN layers of the first modulation doped layer have the same composition, and the InGaN layers of the second modulation doped layer have the same composition. The second modulation doped layer is interposed between the first modulation doped layer and the active region, and an n-electrode is in contact with the first modulation doped layer. Accordingly, an increase in process time is prevented and strains induced in a multiple quantum well structure are reduced.

Abstract: An OLED device including a cathode, an anode, and having therebetween a phosphorescent light-emitting layer that contains a light-emitting organometallic complex including a precious metal, a first ligand including an imidazole group and a second nitrogen heterocycle group, and at least one second different ligand.

Abstract: A light-emitting diode including: a structure in a semiconductor material of first conductivity type, wherein the structure has a first face of which a first region is in contact with a pad of semiconductor material having a second conductivity type opposite the first conductivity type, and the diode further includes a first electric contact on the pad, a second electric contact-on the first face or on a second face of the structure, and a gate in electrically conductive material arranged on a second region of the first face and separated from the first face by an electrically insulating layer.

Abstract: Provided is an organic electroluminescent device including an organic layer interposed between a pair of electrodes, the organic layer including a layer formed of a titanium oxide derivative or a mixture layer containing a titanium oxide derivative. The organic electroluminescent device has higher luminescent efficiency, a longer lifetime and a lower operating voltage than a conventional organic electroluminescent device, and can be easily manufactured.

Abstract: A solid state white light emitting device includes a semiconductor chip producing near ultraviolet (UV) electromagnetic energy in a range of 380-420 nm, e.g. 405 nm. The device may include a reflector forming and optical integrating cavity. Phosphors, such as doped semiconductor nanophosphors, within the chip packaging of the semiconductor device itself, are excitable by the near UV energy. However the re-emitted light from the phosphors have different spectral characteristics outside the absorption ranges of the phosphors, which reduces or eliminates re-absorption. The emitter produces output light that is at least substantially white and has a color rendering index (CRI) of 75 or higher. The white light output of the emitter may exhibit color temperature in one of the following specific ranges along the black body curve: 2,725±145° Kelvin; 3,045±175° Kelvin; 3,465±245° Kelvin; 3,985±275° Kelvin; 4,503±243° Kelvin; 5,028±283° Kelvin; 5,665±355° Kelvin; and 6,530±510° Kelvin.

Abstract: To provide a p-type semiconductor material having a band matching with a hole injection layer and suitable for an anode electrode that can be formed on a glass substrate or a polymer substrate, and to provide a semiconductor device. In the p-type semiconductor material, 1×1018 to 5×1020 cm?3 of Ag is contained in a compound containing Zn and Se, and the semiconductor device includes a substrate and a p-type electrode layer arranged on this substrate and having the aforementioned p-type semiconductor material.

Abstract: A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device includes a group III nitride semiconductor supporting base, a GaN based semiconductor region, an active layer, and a GaN semiconductor region. The primary surface of the group III nitride semiconductor supporting base is not any polar plane, and forms a finite angle with a reference plane that is orthogonal to a reference axis extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region, grown on the semipolar primary surface, includes a semiconductor layer of, for example, an n-type GaN based semiconductor doped with silicon. A GaN based semiconductor layer of an oxygen concentration of 5×1016 cm?3 or more provides an active layer, grown on the primary surface, with an excellent crystal quality.

Abstract: A light-emitting device is disclosed. The light-emitting device comprises a substrate, an ion implanted layer on the substrate, a light-emitting stack layer disposed on the ion implanted layer, and an adhesive layer connecting the substrate with the light-emitting stack layer, wherein the adhesive layer comprises a thin silicon film disposed between the ion implanted layer and the light-emitting layer. This invention also discloses a method of manufacturing a light-emitting device comprising the steps of forming a light-emitting stack layer, forming a thin silicon film on the light-emitting stack layer, providing a substrate, forming an ion implanted layer on the substrate, and providing an electrode potential difference to form an oxide layer between the thin silicon film and the ion implanted layer.

Abstract: A process for preparing a platinum complex represented by the following formula (1) includes reacting a compound represented by the following formula (B-2) and a compound represented by the following formula (B-2?) with a compound represented by the following formula (A-0) to obtain a compound represented by the following formula (C-0); and reacting the compound represented by the formula (C-0) with a platinum salt:

Abstract: A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.

Abstract: A semiconductor light emitting element includes a substrate 11 having a defect concentrated region 11a which has a crystal defect density higher than in the other region. On the substrate 11, a semiconductor layer 12 is formed. On the defect concentrated region 11a, a first electrode 13 is formed. On the semiconductor layer 12, a second electrode 14 is formed.

Abstract: A material for an organic electroluminescence element, characterized in that it comprises a platinum complex formed from a platinum ion and a ligand having at least one aryl group being not capable of free rotation or at least one aromatic heterocyclic group being not capable of free rotation; a display device, characterized in that it comprises said material for an organic electroluminescence element and exhibits high luminous efficiency and long luminous life; and an illumination device, characterized in that it comprises said material for an organic electroluminescence element and exhibits high luminous efficiency and long luminous life.

Abstract: Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer.

Abstract: The present invention provides a fluorescent rare earth complex having high solubility to a medium, showing fluorescence of high intensity and possessing excellent durability, and also provides a light-emitting element using that complex. The rare earth complex comprises a rare earth ion and a phosphine oxide ligand, and the phosphine oxide ligand contains a phosphorus atom connecting to at least one phenyl group. In the phenyl group, at least one of the meta-positions is substituted. It is also necessary that the para-position of the phenyl group be not substituted.

Abstract: Semiconductor films and structures, such as films and structures utilizing zinc oxide or other metal oxides, and processes for forming such films and structures, are provided for use in metal oxide semiconductor light emitting devices and other metal oxide semiconductor devices, such as ZnO based semiconductor devices.

Abstract: Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.

Abstract: A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type opposite to the first conductivity type, formed above the first semiconductor layer and forming a pn junction together with the first semiconductor layer; and a Zn—Si—O layer containing compound of Zn, Si and O and covering a surface exposing the pn junction of the lamination structure.

Abstract: A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group semiconductor material, or II-VI-group semiconductor material and III-V-group semiconductor material. At least one amorphous region and at least one crystalloid region are formed in the first semiconductor layer. The second semiconductor layer is formed on the first semiconductor layer and is crystal-grown from the at least one crystalloid region. A method of manufacturing a semiconductor substrate includes preparing a growth substrate; crystal-growing the first semiconductor layer on the growth substrate; forming the at least one amorphous region and the at least one crystalloid region in the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer using the at least one amorphous region as a mask and the at least one crystalloid region as a seed.

Abstract: A ZnO-based semiconductor light emitting element includes a ZnO-based semiconductor layer formed on a rectangular sapphire A-plane substrate having a principal surface lying in the A-plane {11-20}. The substrate has a thickness of 50 to 200 ?m and is surrounded by two parallel first side edges forming an angle in a range of 52.7° to 54.7° with respect to the m-axis orthogonal to the c-axis and two parallel second side edges orthogonal to the first side edges. The light emitting element is obtained by: forming, on a surface of the sapphire A-plane substrate opposite to the surface on which the ZnO-based semiconductor layer is formed, first scribed grooves forming an angle in a range of 52.7° to 54.7° with respect to the m-axis and second scribed grooves orthogonal to the first scribed grooves; and breaking the substrate along the first scribed grooves and then along the second scribed grooves.

Abstract: Memory devices having a plurality of memory cells, with each memory cell including a phase change material having a laterally constricted portion thereof. The laterally constricted portions of adjacent memory cells are vertically offset and positioned on opposite sides of the memory device. Also disclosed are memory devices having a plurality of memory cells, with each memory cell including first and second electrodes having different widths. Adjacent memory cells have the first and second electrodes offset on vertically opposing sides of the memory device. Methods of forming the memory devices are also disclosed.

Abstract: Disclosed is an organic electroluminescent device (organic EL device) utilizing phosphorescence which is improved in luminous efficiency and sufficiently secured of driving stability. The organic EL device comprises an anode 2, organic layers containing a hole-transporting layer 4, a light-emitting layer 5, and an electron-transporting layer 6, and a cathode 7 piled one upon another on a substrate 1, the hole-transporting layer is disposed between the light-emitting layer and the anode, the electron-transporting layer is disposed between the light-emitting layer and the cathode, and the light-emitting layer comprises an organic Al complex represented by the following general formula (I) as a host material and an organic Ir complex represented by the following general formula (II) as a guest material. In formula (I), L is ArO—, ArCOO—, Ar3SiO—, Ar3GeO—, or Ar2AlO—.

Abstract: Provided is a material containing at least one phosphorescent metal complex, and a compound represented by the following formula (1): wherein at least one of R1 to R3 is a 9-carbazolyl group which is optionally substituted or an azacarbazolyl group having 2 to 5 nitrogen atoms which is optionally substituted. The material for the organic electroluminescence device may be used as a host material or a hole transporting material. Also provided is an organic electroluminescence device which has an organic thin film layer that contains the material, and exhibits a high emitting efficiency, causes little pixel defects, is excellent in heat resistance, and has a long lifetime.

Abstract: An organic EL device 100 including a plurality of emitting layers (15) and (17) between a cathode (18) and (19) and an anode (12), each of the emitting layers (15) and (17) made of a host material having a triplet energy gap of 2.52 eV or more and 3.7 eV or less, and a dopant having a light emitting property related to a triplet state, the dopant containing a metal complex with a heavy metal.

Abstract: A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface is not more than 3×1013, and a haze level of the surface is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and a haze level of the surface is not more than 5 ppm.

Abstract: Provided are a compound semiconductor film which is manufactured at a low temperature and exhibits excellent p-type conductivity, and a light emitting film in which the compound semiconductor film and a light emitting material are laminated and with which high-intensity light emission can be realized. The compound semiconductor film has a composition represented by a Cu2—Zn—IV—S4 type, in which the IV is at least one of Ge and Si. The light emitting film includes the light emitting material and the compound semiconductor film laminated on a substrate in the stated order.

Abstract: A nitride semiconductor device having a substrate electrode establishing an excellent ohmic contact with a nitride semiconductor substrate is provided. The nitride semiconductor device includes a substrate having an electrode formed on at least one main surface. The substrate is a nitride semiconductor substrate whose surface includes two regions. The first region has an electrode formed thereon and a second region does not have any electrodes formed thereon. A first n-type impurity is included in a higher concentration in the first region than that in the second region in the vicinity of the surface of the substrate.

Abstract: Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other.

Abstract: An organic light emitting diode with Ir complex is disclosed in this specification, wherein the Ir complex is used as the phosphorous emitter. The chemical containing pyridyl triazole or pyridyl imidazole functional group is used as the auxiliary monoanionic bidentate ligand in the mentioned Ir complex, so that the CIE coordinate of the mentioned Ir complex is adjustable and the light emitting performance of the Ir complex is improved.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having at least one doped functional layer having at least one dopant and at least one codopant, wherein the semiconductor layer sequence includes a semiconductor material having a lattice structure, one selected from the dopant and the codopant is an electron acceptor and the other an electron donor, the codopant is bonded to the semiconductor material and/or arranged at interstitial sites, and the codopant at least partly forms no bonding complexes with the dopant.

Abstract: Disclosed are a semiconductor device, a light emitting device and a method for manufacturing the same. The semiconductor device includes a substrate, a plurality of rods disposed on the substrate, a plurality of particles disposed between the rods and on the substrate, and a first semiconductor layer disposed on the rods. The method for manufacturing the semiconductor device includes preparing a substrate, disposing a plurality of first particles on the substrate, and forming a plurality of rods by etching a portion of the substrate by using the first particles as an etch mask. The semiconductor device effectively reflects in an upward direction light by the above particles, so that light efficiency is improved. The rods are easily formed by using the first particles.

Abstract: Disclosed is an organic electroluminescent element containing organic layers sandwiched between an anode and a cathode, wherein the organic layers incorporates an emission layer A containing a host compound A and at least two types of emission dopants, and an emission layer B containing a host compound B and at least one type of emission dopant, provided that at least one of the emission dopants contained in the emission layer A is a phosphorescence-emitting material.

Abstract: A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device 11a includes a group III nitride semiconductor supporting base 13, a GaN based semiconductor region 15, an active layer active layer 17, and a GaN semiconductor region 19. The primary surface 13a of the group III nitride semiconductor supporting base 13 is not any polar plane, and forms a finite angle with a reference plane Sc that is orthogonal to a reference axis Cx extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region 15 is grown on the semipolar primary surface 13a. A GaN based semiconductor layer 21 of the GaN based semiconductor region 15 is, for example, an n-type GaN based semiconductor, and the n-type GaN based semiconductor is doped with silicon.

Abstract: Provided is a cyclometalated transition metal complex represented by Formula 1: The cyclometalated transition metal complex contains a new ancillary ligand having a carboxylate acid or the like connected to a hetero ring, so that it can efficiently emit red light from a phosphorous material through intersystem crossing (ISC) to form triplet excitons and then metal to ligand charge transfer (MLCT). An organic light emitting device manufactured using the transition metal complex shows excellent luminous efficiency and external quantum efficiency.

Abstract: Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element.

Abstract: A nitride semiconductor light-emitting device according to the present invention includes a nitride based semiconductor substrate 10 and a nitride based semiconductor multilayer structure that has been formed on the semiconductor substrate 10. The multilayer structure includes an active layer 16 that produces emission and multiple semiconductor layers 12, 14 and 15 that have been stacked one upon the other between the active layer 16 and the substrate 10 and that include an n-type dopant. Each and every one of the semiconductor layers 12, 14 and 15 includes Al atoms.

Abstract: An organic electroluminescent device (1) including an anode (2), a cathode (6), and at least a first layer (3), a second layer (4), and a third layer (5) provided between the anode (2) and the cathode (6) in that order from the anode side. At least one of the first to third layers (3), (4), and (5) includes a phosphorescent compound. At least one of the first to third layers (3), (4), and (5) is an emitting layer. At least three compounds respectively forming the first layer (3), the second layer (4), and the third layer (5) other than the phosphorescent compound are compounds of the following formula (1). wherein R1 to R7 each represent a hydrogen atom or a substituent, provided that adjacent substituents may form a ring.

Abstract: A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO.