Abstract: It is an object of the present invention to provide an organic electroluminescence element which can be easily produced and has a good light-emitting property and a good lifetime property, and a method for producing the same. That is, the present invention provides the organic electroluminescence element comprising an anode, a light-emitting layer and a cathode, and further comprising a metal doped molybdenum oxide layer provided between the anode and the light-emitting layer; and the method for producing the organic electroluminescence element including a stacking step to obtain a metal doped molybdenum oxide layer by simultaneously depositing molybdenum oxide and a dopant metal on another layer which constitutes the element.

Abstract: Disclosed is an organic electroluminescent element having high luminous efficiency and long life. Also disclosed are a display device and an illuminating device respectively using such an organic electroluminescent element. Specifically disclosed is an organic electroluminescent element comprising an electrode and at least one or more organic layers on a substrate. This organic electroluminescent element is characterized in that at least one of the organic layers is a light-emitting layer containing a phosphorescent compound and a host compound, the phosphorescent compound has a HOMO of ?5.15 to ?3.50 eV and a LUMO of from ?1.25 to +1.00 eV, and the host compound has a 0-0 band of the phosphorescence spectrum at not more than 460 nm and a glass transition temperature of not less than 60° C.

Abstract: A light-emitting element disclosed in the present invention includes a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode. The present invention is characterized by the device structure in which the first layer comprising a hole-transporting material is doped with a hole-blocking material or an organic compound having a large dipole moment. This structure allows the formation of a high performance light-emitting element with high luminous efficiency and long lifetime. The device structure of the present invention facilitates the control of the rate of the carrier transport, and thus, leads to the formation of a light-emitting element with a well-controlled carrier balance, which contributes to the excellent characteristics of the light-emitting element of the present invention.

Abstract: In a semiconductor device 100, it is possible to prevent C from piling up at a boundary face between an epitaxial layer 22 and a group III nitride semiconductor substrate 10 by the presence of 30×1010 pieces/cm2 to 2000×1010 pieces/cm2 of sulfide in terms of S and 2 at % to 20 at % of oxide in terms of O in a surface layer 12 with a front surface 10a having a specific plane orientation. Accordingly, a high-resistivity layer is prevented from being formed at the boundary face between the epitaxial layer 22 and the group III nitride semiconductor substrate 10. Consequently, it is possible to improve the emission intensity of the semiconductor device 100.

Abstract: An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing distortions on an atomic scale in the lattice structure of said crystalline material and the electronic and/or optoelectronic parameters of said device are dependent on the modification of said bandgap is exemplified by a radiation emissive optoelectronic semiconductor device which comprises a junction (10) formed from a p-type layer (11) and an n-type layer (12), both formed from indirect bandgap semiconductor material. The p-type layer (11) contains a array of dislocation loops which create a strain field to confine spatially and promote radiative recombination of the charge carriers.

Abstract: A wavelength-converting structure for a wavelength-converted light emitting diode (LED) assembly. The wavelength-converting structure includes a thin film structure having a non-uniform top surface. The non-uniform top surface is configured increase extraction of light from the top surface of a wavelength-converting structure.

Abstract: A light emitting device includes a substrate, at least one electrode, a first contact layer, a second contact layer, a light emitting structure layer, and an electrode layer. The electrode is disposed through the substrate. The first contact layer is disposed on a top surface of the substrate and electrically connected to the electrode. The second contact layer is disposed on a bottom surface of the substrate and electrically connected to the electrode. The light emitting structure layer is disposed above the substrate at a distance from the substrate and electrically connected to the first contact layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The electrode layer is disposed on the light emitting structure layer.

Abstract: A large-area, high-purity, low-cost single crystal semi-insulating gallium nitride that is useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications is provided. The gallium nitride is formed by doping gallium nitride material during ammonothermal growth with a deep acceptor dopant species, e.g., Mn, Fe, Co, Ni, Cu, etc., to compensate donor species in the gallium nitride, and impart semi-insulating character to the gallium nitride.

Abstract: A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer.

Abstract: Provided is an epitaxial substrate for a semiconductor device, which has excellent schottky contact characteristics that are stable over time. The epitaxial substrate for a semiconductor device includes a base substrate, a channel layer formed of a first group III nitride containing at least Ga and having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1), and a barrier layer formed of a second group III nitride containing at least In and Al and having a composition of Inx2Aly2Gaz2N (x2+y2+z2=1), wherein the barrier layer has tensile strains in an in-plane direction, and pits are formed on a surface of the barrier layer at a surface density of 5×107/cm2 or more and 1×109/cm2 or less.

Abstract: Disclosed is an organic electroluminescent device having high external quantum efficiency and long emission life. Also disclosed are an illuminating device and a display, each comprising such an organic electroluminescent device. The organic electroluminescent device is characterized by comprising at least an anode and a cathode on a supporting substrate, while having at least one light-emitting layer between the anode and the cathode. The organic electroluminescent device is also characterized by containing a polymer which at least partially contains a compound A having a partial structure represented by the general formula (a) below and a reactive group, and is obtained by polymerizing the compound A through the reactive group. (In the formula, Ar1 and Ar2 respectively represent an aromatic ring.

Abstract: A first light-emitting layer of a first organic electroluminescent element is disposed in common to a second organic electroluminescent element, a second light-emitting layer of the second organic electroluminescent element is disposed in contact with the first light-emitting layer and in the cathode side, and the second light-emitting layer is a light-emitting layer having an electron trapping property.

Abstract: The present invention relates to the improvement of organic electroluminescent devices, in particular blue-emitting devices, by using compounds of the formula (1) as dopants in the emitting layer.

Abstract: A blue fluorescent compound includes a host material being capable of transporting an electron or a hole; and a dopant material represented by following Formula 1: wherein at least two of the R1, the R2, the R3, and the R4 are selected from substituted or non-substituted aromatic group or substituted or non-substituted heterocyclic group, and the R5 is selected from substituted or non-substituted aromatic group or substituted or non-substituted heterocyclic group.

Abstract: Novel structures of photovoltaic cells (also treated as solar cells) are provided. The cells are based on nanometer-scaled wires, tubes, and/or rods, which are made of electronic materials covering semiconductors, insulators or metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells will have enormous applications in space, commercial, residential, and industrial applications.

Abstract: An organic light-emitting device (OLED) is disclosed. The OLED includes a light-emitting layer, a first electrode, and a second electrode, in which the light-emitting layer is interposed between the first and the second electrodes and includes a first molecular energy level of a host, and a second molecular energy level of a dopant. The first molecular energy level has a highest occupied molecular orbital (HOMO) which is substantially same as the HOMO of the second molecular energy level, or the first molecular energy level has a lowest unoccupied molecular orbital (LUMO) which is substantially the same as the LUMO of the second molecular energy level.

Abstract: An organic light-emitting diode (OLED) on a transparent substrate includes a microcavity formed between a reflecting cathode and semi-reflecting anode. The microcavity includes multiple organic layers with at least one light-emitting layer. The OLED is characterized by a transparent planarization layer between the substrate and an upper metallic layer forming the OLED semitransparent anode. A process for making such an OLED is also described.

Abstract: Provided is a light emitting apparatus. The light emitting apparatus includes a substrate; a light emitting device on the substrate; a fluorescent layer formed on the substrate and the light emitting device to surround the light emitting device; an encapsulant resin layer formed on the substrate and the fluorescent layer to surround the fluorescent layer; and a lens disposed on the light emitting device and supported by the substrate, wherein the lens includes a lens body having a first recess formed at a center of a top surface of the lens body and a second recess formed at a center of a bottom surface of the lens body, and a lens supporter provided at the bottom surface of the lens body to support the lens body such that the lens body is spaced apart from the substrate.

Abstract: A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed in the upper LED layer such that current passing between an electrode contacting the upper LED layer flows around the current blocking layer. When the current blocking layer is positioned between the electrode and the light-emitting layer, the light emitted by the light-emitting layer is not blocked by the electrode and the light efficiency is increased. The current blocking layer may be formed by converting a portion of the upper LED layer into a resistive region. In an embodiment, ions such as magnesium, carbon, or silicon are implanted into the upper LED layer to form the current blocking layer.

Abstract: A first light-emitting layer of a first organic electroluminescent element is disposed in common to a second organic electroluminescent element, a second light-emitting layer of the second organic electroluminescent element is disposed in contact with the first light-emitting layer and in the cathode side, and the first light-emitting layer contains a host material and an assist dopant material to transport holes to the second light-emitting layer.

Abstract: Novel combination of materials and device architectures for organic light emitting devices is provided. An organic light emitting device, is provided, having an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer includes a host and a phosphorescent emissive dopant having a peak emissive wavelength less than 500 nm, and a radiative phosphorescent lifetime less than 1 microsecond. Preferably, the phosphorescent emissive dopant includes a ligand having a carbazole group.

Abstract: The present invention relates to compounds which can be used in particular as ligands, to complexes of formula (I) and (II) and also to light-emitting devices and in particular to organic light-emitting devices (OLEDs). In particular, the invention relates to the use of luminescent oxazole-chelate metal complexes as emitters in such devices.

Abstract: A first light-emitting layer of a first organic electroluminescent element is disposed in common to a second organic electroluminescent element, a second light-emitting layer of the second organic electroluminescent element is disposed in contact with the first light-emitting layer and in the anode side, and the second light-emitting layer is a light-emitting layer having a hole trapping property.

Abstract: An organic electroluminescent element containing an anode and a cathode having therebetween a light emitting layer, wherein the light emitting layer contains a guest compound having a substructure represented by Formula (AA): wherein A represents a group of atoms necessary to form an aromatic hydrocarbon ring or an aromatic heterocycle, B represents a group of atoms necessary to form a 5-membered aromatic heterocycle containing nitrogen or a 5-membered heterocycle containing nitrogen and M represents Ir or Pt, and a host compound represented by Formula (1):

Abstract: The present invention has been made in an effort to provide an organic light emitting display device comprising: a substrate; and subpixels formed on the substrate, each of the subpixels comprising an emission layer consisting of a first host layer made of a first host material, a mixed layer made of the first host material, a dopant material, and a second material, and a second host layer made of the second host material.

Abstract: Novel structures of photovoltaic cells (also called as solar cells) are provided. The cells are based on nanoparticles or nanometer-scaled wires, tubes, and/or rods, which are made of electronic materials covering semiconductors, insulators, and may be metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells will have enormous applications such as in space, commercial, residential and industrial applications.

Abstract: A nitride-based semiconductor light-emitting device according to the present invention has a nitride-based semiconductor multilayer structure 50. The nitride-based semiconductor multilayer structure 50 includes: an active layer 32 including an AlaInbGacN crystal layer (where a+b+c=1, a?0, b?0 and c?0); an AldGaeN overflow suppressing layer 36 (where d+e=1, d>0, and e?0); and an AlfGagN layer 38 (where f+g=1, f?0, g?0 and f<d). The AldGaeN overflow suppressing layer 36 is arranged between the active layer 32 and the AlfGagN layer 38. And the AldGaeN overflow suppressing layer 36 includes an In-doped layer that is doped with In at a concentration of 1×1016 atms/cm3 to 1×1019 atms/cm3.

Abstract: An organic electroluminescent element comprising a metal complex represented by Formula (1), wherein Z is a hydrocarbon ring or a heterocyclic ring, provided that each of the hydrocarbon ring and the heterocyclic ring has a substituent having a steric parameter (Es) of ?0.5 or less at the third atom of the ring counted from a nitrogen atom attached to Z, the nitrogen atom being counted as the first atom, X, Y, A, B, X1-L1-X2, M1, m1 and m2 are described in the specification.

Abstract: A method of manufacture of an optoelectronic device includes the steps of: providing or forming a body of crystalline silicon containing substitutional carbon atoms, and irradiating said body of crystalline silicon with protons (H+) to create radiative defect centres in a photoactive region of the device, wherein at least some of said defect centres are G-centre complexes having the form Cs—SiI—Cs, where Cs is a substitutional carbon atom and S¾ is an interstitial silicon atom. An optoelectronic device (FIG. 3) manufactured using the method is described.

Abstract: A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant.

Abstract: Provided is a method for controlling a device using a doped carbon-nanostructure, and a device including the doped carbon-nanostructure, in which the method for controlling the device selectively controls the mobility of electrons or holes using N-type or P-type doped carbon-nanostructure; the N-type or P-type impurities-doped carbon-nanostructure can selectively control the transport of electrons or holes according to a doped material; and also since the doped carbon-nanostructure limits the transport of charge that is the opposite charge to the transport facilitating charge, it can improve the efficiency of device by adding to a functional layer of device or using as a separate layer in the electrons or holes-only transporting device.

Abstract: An organic electroluminescent element containing an anode and a cathode having therebetween a light emitting layer, wherein the light emitting layer contains a guest compound having a substructure represented by the following Formula (A): wherein Ra represents alkyl, alkenyl, alkynyl, cycloalkyl, aromatic hydrocarbon, aromatic heterocyclic or heterocyclic, Rb and Rc represent hydrogen or a substituent, A1 represents a group of atoms which forms an aromatic hydrocarbon ring or an aromatic heterocycle, M represents Ir or Pt, and a host compound having the following Formula (1): wherein Ra1 represents alkyl, alkenyl, alkynyl, cycloalkyl or heterocyclic, R1, R2 and R5 each represent hydrogen or a substituent, and n1, n2 and n5 each represent 0 to 4.

Abstract: It is an object of the present invention to provide an organic light-emitting device which can emit white light by easily controlling dopant concentrations. The organic light-emitting device has a first electrode (112) and second electrode (111) which hold a light-emitting layer (113) in-between, wherein the light-emitting layer contains a host material (104), red-light-emitting dopant (105), green-light-emitting dopant (106) and blue-light-emitting dopant (107), the red-light-emitting dopant containing a first functional group for transferring the dopant toward the first electrode and the green-light-emitting dopant containing a second functional group for transferring the dopant toward the second electrode.

Abstract: Provided is a transparent graphene film which is prepared by maintaining the primary reduced state of a graphene oxide thin film via chemical reduction, reducing the graphene oxide thin film with chemical vapor deposition, and doping nitrogen, thereby enhancing the conductivity and enabling the control of work function and a manufacturing method thereof. According to the present disclosure, a flexible, transparent, electrical conductivity-enhanced, and work function controllable graphene film can be large area processed and produced in large quantities so that can be applied in real industrial processes by forming a graphene oxide thin film on a substrate, performing the primary chemical reduction using a reducing agent, and performing further the secondary thermal reduction and nitrogen doping by injecting hydrogen and ammonia gas through chemical vapor deposition equipment.

Abstract: According to an embodiment, a semiconductor light emitting device includes a light emitting body including a semiconductor light emitting layer, a support substrate supporting the light emitting body, and a bonding layer provided between the light emitting body and the support substrate, the bonding layer bonding the light emitting body and the support substrate together. The device also includes a first barrier metal layer provided between the light emitting body and the bonding layer, and an electrode provided between the light emitting body and the first barrier metal layer. The first barrier layer includes a first layer made of nickel and a second layer made of a metal having a smaller linear expansion coefficient than nickel, and the first layer and the second layer are alternately disposed in a multiple-layer structure. The electrode is electrically connected to the light emitting body.

Abstract: A semiconductor device according to the present invention includes a substrate; a nitride semiconductor layer formed above the substrate and having a laminated structure including at least three layers; a heterojunction bipolar transistor formed in a region of the nitride semiconductor layer; and a field-effect transistor formed in a region of the nitride semiconductor layer, the region being different from the region in which the heterojunction bipolar transistor is formed.

Abstract: Disclosed are an organic electroluminescent device (organic EL device) that is improved in luminous efficiency and fully assured of driving stability and has a simple structure and an organic metal complex suitable therefor. The organic metal complex is represented by the following general formula (I) wherein Ar1 denotes an aromatic hydrocarbon group or a heteroaromatic group and may have substituents, Ar2 and Ar3 respectively denote an aromatic hydrocarbon group or a heteroaromatic group and may have substituents, M denotes a trivalent metal, and L denotes an arylate ligand containing a hetero ring having at least one nitrogen atom capable of coordinating M. This organic metal complex, along with a phosphorescent dopant, is suitable for a material constituting the light-emitting layer of an organic EL device.

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting part, and a p-side electrode. The light emitting part is provided between the n-type and the p-type semiconductor layers, and includes a plurality of barrier layers and a plurality of well layers. The p-side electrode contacts the p-type semiconductor layer. The p-type semiconductor layer includes first, second, third, and fourth p-type layers. The first p-type layer contacts the p-side electrode. The second p-type layer contacts the light emitting part. The third p-type layer is provided between the first p-type layer and the second p-type layer. The fourth p-type layer is provided between the second p-type layer and the third p-type layer. The second p-type layer contains Al and contains a p-type impurity in a lower concentration lower than that in the first concentration.

Abstract: There is provided a manufacturing method of an LED module including: forming an insulating film on a substrate; forming a first ground pad and a second ground pad separated from each other on the insulating film; forming a first division film that fills a space between the first and second ground pads, a second division film deposited on a surface of the first ground pad, and a third division film deposited on a surface of the second ground pad; forming a first partition layer of a predetermined height on each of the division films; sputtering seed metal to the substrate on which the first partition layer is formed; forming a second partition layer of a predetermined height on the first partition layer; forming a first mirror connected with the first ground pad and a second mirror connected with the second ground pad by performing a metal plating process to the substrate on which the second partition layer is formed; removing the first and second partition layers; connecting a zener diode to the first mirror

Abstract: The present invention concerns a metal-carbene complex of the general formula (I) in which R5 and R6 together, or R6 and R7 together, a unit of the formula: in which * denotes the connection to the carbon atoms of the benzene ring bearing the R5 and R6 radicals or R6 and R7 radicals, and the oxygen atom is connected to the carbon atom bearing the R5, R6 or R7 radical, and A is oxygen or sulfur. The present invention further concerns light-emitting layer comprising at least one metal-carbene complex according to the present invention and an organic light-emitting diode comprising a light-emitting layer according to the present invention, a device selected from the group consisting of stationary visual display units, mobile visual display units and illumination means and the use of a metal-carbene complex according to the present invention in organic light-emitting diodes, especially as emitter, matrix material, charge carrier material and charge blocker material.

Abstract: The present invention relates to electronic devices, in particular organic electroluminescent devices, comprising metal complexes which contain isonitrile ligands.

Abstract: An organic light emitting diode (OLED) architecture in which efficient operation is achieved without requiring a blocking layer by locating the recombination zone close to the hole transport side of the emissive layer. Aryl-based hosts and Ir-based dopants with suitable concentrations result in an efficient phosphorescent OLED structure. Previously, blocking layer utilization in phosphorescent OLED architectures was considered essential to avoid exciton and hole leakage from the emissive layer, and thus keep the recombination zone inside the emissive layer to provide high device efficiency and a pure emission spectrum.

Abstract: An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region. N- and p-contacts electrically connected to the n- and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to a mount via the contacts. A growth substrate is removed from the semiconductor structure and a thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 ?m some embodiments, less than 10 ?m in some embodiments. The top side of the semiconductor structure may be textured.

Abstract: According to one embodiment, there is provided an organic light-emitting diode including an anode and a cathode arranged apart from each other, and an emissive layer interposed between the anode and the cathode and including a host material and an emitting dopant. The emitting dopant includes a copper complex represented by the formula (1): where Cu+ represents a copper ion, the ligand A represents a pyridine derivative having nitrogen as a coordinate element and may have a substituent, PR1R2R3 is a phosphine compound coordinating with Cu+, where R1, R2 and R3 may be the same or different, and represent a linear, branched or cyclic alkyl group having 6 or less carbon atoms or an aromatic cyclic group which may have a substituent, and X? represents a counter ion (counterion) where X represents F, Cl, Br, I, BF4, PF6, CH3CO2, CF3CO2, CF3SO3 or ClO4.

Abstract: A strain release layer adjoining the active layer in a blue LED is bounded on the bottom by a first relatively-highly silicon-doped region and is also bounded on the top by a second relatively-highly silicon-doped region. The second relatively-highly silicon-doped region is a sublayer of the active layer of the LED. The first relatively-highly silicon-doped region is a sublayer of the N-type layer of the LED. The first relatively-highly silicon-doped region is also separated from the remainder of the N-type layer by an intervening sublayer that is only lightly doped with silicon. The silicon doping profile promotes current spreading and high output power (lumens/watt). The LED has a low reverse leakage current and a high ESD breakdown voltage. The strain release layer has a concentration of indium that is between 5×1019 atoms/cm3 and 5×102° atoms/cm3, and the first and second relatively-highly silicon-doped regions have silicon concentrations that exceed 1×1018 atoms/cm3.

Abstract: Novel triphenylene compounds are provided. Specific examples include multi-aryl-substituted triphenylenes. A preferred group of compounds are triphenylenes that are substituted with a non-fused aryl group having one or more meta-substituents, where each meta-substituent is a non-fused aryl group optionally substituted with further substituents selected from the group consisting of non-fused aryl groups and alkyl groups. A further preferred group of compounds are triphenylenes that are substituted with a non-fused heteroaryl group having one or more meta-substituents, where each meta-substituent is a non-fused aryl or heteroaryl group optionally substituted with further substituents selected from the group consisting of non-fused aryl groups, non-fused heteroaryl groups, and alkyl groups. Some high triplet energy analogs are expected to work with deep blue phosphorescent dopants. The compounds may be useful in phosphorescent organic light emitting devices.

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Abstract: A method for manufacturing a light emitting device, includes: preparing a first substrate by slicing a single crystal ingot pulled in a pulling direction tilted with respect to a first plane orientation, the slicing being in a direction substantially perpendicular to the pulling direction; preparing a second substrate including a major surface having a plane orientation substantially parallel to a plane orientation of a major surface of the first substrate; growing a stacked unit as a crystal on the major surface of the second substrate, the stacked unit including a light emitting layer; and removing the second substrate after bonding the stacked unit and the major surface of the first substrate by heating them in a joined state.

Abstract: Novel structures of photovoltaic cells (also known as solar cells) are provided. The Cells are based on the nanometer-scaled wire, tubes, and/or rods, which are made of the electronics materials covering semiconductors, insulator or metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells can have also high radiation tolerant capability. These cells will have enormous applications such as in space, in commercial, residential and industrial applications.

Abstract: Novel structures of photovoltaic cells (also known as solar cells) are provided. The Cells are based on the nanometer-scaled wire, tubes, and/or rods, which are made of the electronics materials covering semiconductors, insulator or metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells can have also high radiation tolerant capability. These cells will have enormous applications such as in space, in commercial, residential and industrial applications.