Abstract: A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitting the light and accommodates the semiconductor light emitting device; and a gettering portion for performing gettering of a material containing at least one of carbon and silicon. The gettering portion is positioned, in the container, in a region other than the part of the light emitting face of the semiconductor light emitting device.

Abstract: A composite of a base and an array of needle-like crystals formed on the surface of the base is provided, in which the base side and the opposite side to the base with respect to the array can be isolated in a satisfactory manner. A composite 10 includes a transparent electrode 2 serving as the base, an array 4 of needle-like crystals 3 formed thereon, and a coating film 15 covering the surface of the needle-like crystals 3. The needle-like crystals 3 are made of, for example, zinc oxide, and the coating film 15 contains, for example, titanium oxide. The array 4 includes a first region R1 on the transparent electrode 2 side and a second region R2 on the opposite side to the transparent electrode 2 with respect to the first region R1.

Abstract: The present invention relates to a photovoltaic device, especially hybrid solar cells, comprising at least one layer comprising evaporated fluoride and/or acetate; and to a method for preparing the same.

Abstract: A structure and method for transferring electronic charge or heat or light between substrates. The structure includes first and second substrates separated from one another and a plurality of localized spacers connecting the first and second substrates together. At least one of the localized spacers having a lateral dimension less than 350 nm. A sub-micron separation distance between the first and second substrates is configured to provide carrier tunneling or to provide heat transfer or light transfer between the first and second substrates. The method provides charge carriers or heat or light to a first substrate. The first substrate is separated from a second substrate by at least one localized spacer having a lateral dimension less than 350 nm and tunnels the charge carriers or couples the heat or couples light from the first substrate to the second substrate across a sub-micron gap between the first and second substrates formed by the at least one localized spacer.

Abstract: A method of making nanostructures using a self-assembled monolayer of organic spheres is disclosed. The nanostructures include bowl-shaped structures and patterned elongated nanostructures. A bowl-shaped nanostructure with a nanorod grown from a conductive substrate through the bowl-shaped nanostructure may be configured as a field emitter or a vertical field effect transistor. A method of separating nanoparticles of a desired size employs an array of bowl-shaped structures.

Abstract: The present invention provides for an array of nanostructures grown on a conducting substrate. The array of nanostructures as provided herein is suitable for manufacturing electronic devices such as an electron beam writer, and a field emission device.

Abstract: A field emission device is provided. The field emission device includes a first substrate including a gate electrode including gate lines respectively extending in first, second, and third direction and a cathode electrode including cathode lines respectively extending in the first, second, and third directions; a second substrate facing the first substrate and including an anode electrode; and a space between the first and second substrates.

Abstract: Preferred embodiments of the invention provide semiconducting microcavity plasma devices. Preferred embodiments of the invention are microcavity plasma devices having at least two pn junctions, separated by a microcavity or microchannel and powered by alternate half-cycles of a time-varying voltage waveform. Alternate embodiments have a single pn junction. Microplasma is produced throughout the cavity between single or multiple pn junctions and a dielectric layer isolates the microplasma from the single or multiple pn junctions. Additional preferred embodiments are devices in which the spatial extent of the plasma itself or the n or p regions associated with a pn junction are altered by a third (control) electrode.

Abstract: Self-healing photocathode device comprising a photoemissive multi-alkali semiconductor comprising a multi-alkali antimonide having the formula AxBy CzSb, where A, B and C are Group I alkali metals and x+y+z=3; a nanostructured porous membrane, one surface of which is in direct contact with the multi-alkali semiconductor and the opposing surface of which is disposed toward the inside of a sealed reservoir, such that the porous membrane and the sealed reservoir form a volume which is maintained at low pressure; a temperature control means in contact with the porous membrane, wherein the temperature control means regulates the temperature of the porous membrane at 200° C. or less; a source comprising elemental cesium which is releasable into the enclosed volume; and, a current conducting means attached to the source.

Abstract: A method for preparation of carbon nanotubes (CNTs) bundles for use in field emission devices (FEDs) includes forming a plurality of carbon nanotubes on a substrate, contacting the carbon nanotubes with a polymer composition comprising a polymer and a solvent, and removing at least a portion of the solvent so as to form a solid composition from the carbon nanotubes and the polymer to form a carbon nanotube bundle having a base with a periphery, and an elevated central region where, along the periphery of the base, the carbon nanotubes slope toward the central region.

Abstract: Provided is a method for manufacturing a field emission array with a carbon microstructure. The method includes: a photomask attachment step of attaching a photomask with a pattern groove to one surface of a transparent substrate; a photoresist attachment step of attaching a negative photoresist to one surface of the photomask; an exposure step of irradiating light toward the opposite surface of the transparent substrate from the photomask to cure a portion of the negative photoresist with the light irradiated on the negative photoresist through the pattern groove; a developing step of removing an uncured portion of the negative photoresist while leaving the cured portion of the negative photoresist as a microstructure; a pyrolysis step of heating and carbonizing the microstructure thus obtained; and a cathode attachment step of attaching a voltage-supplying cathode to the surface of the transparent substrate on which the microstructure is formed.

Abstract: The present invention improves the efficiency of conversion from a non-radiation two-dimensional electron plasmon wave into a radiation electromagnetic wave, and realizes a wide-band characteristic. A terahertz electromagnetic wave radiation element of the present invention comprises a semiinsulating semiconductor bulk layer, a two-dimensional electron layer formed directly above the semiconductor bulk layer by a semiconductor heterojunction structure, source and drain electrodes electrically connected to two opposed sides of the two-dimensional electron layer, a double gate electrode grating which is provided in the vicinity of and parallel to the upper surface of the two-dimensional electron layer and for which two different dc bias potentials can be alternately set, and a transparent metal mirror provided in contact with the lower surface of the semiconductor bulk layer, formed into a film shape, functioning as a reflecting mirror in the terahertz band, and being transparent in the light wave band.

Abstract: A light-emitting body of rapid speed of response and high light emission intensity, and an electron beam detector, scanning electron microscope and mass spectroscope using this are provided. In the light-emitting body 10 according to the present invention, when fluorescence is emitted by a nitride semiconductor layer 14 formed on one face 12a of a substrate 12 in response to incidence of electrons, at least some of this fluorescence is transmitted through this substrate 12, whereby that fluorescence is emitted from the other face 12b of the substrate. The response speed of this fluorescence is not more than ?sec order. Also, the intensity of emission of this fluorescence is almost identical to that of a conventional P47 phosphor. Specifically, with this light-emitting body 10, a response speed and light emission intensity are obtained that are fully satisfactory for application to a scanning electron microscope or mass spectroscope.

Abstract: A carbon nanotube field emission device with overhanging gate fabricated by a double silicon-on-insulator process. Other embodiments are described and claimed.

Abstract: A light emission device and a display having the light emission device are provided. The light emission device includes first and second substrates arranged opposite to each other, an electron emission unit provided on the first substrate, a light emission unit provided on the second substrate, and spacers that are supportably disposed between the first and second substrates. The spacers are formed in a pillar configuration and each side of the spacers is arranged at an acute angle with respect to an edge of driving electrodes of the electron emission unit.

Abstract: Disclosed herein is a manufacturing method of metal oxide nanostructure, including the steps of: (S1) supplying a precursor containing a first metal, a precursor containing a second metal and oxygen onto a substrate; (S2) forming an amorphous second metal oxide layer on the substrate; (S3) forming first nuclei containing the first metal as a main component and second nuclei containing the second metal as a main component on the substrate; (S4) converting the first nuclei into single crystalline seed layers spaced apart from each other and converting the second nuclei into amorphous layers surrounding the first nuclei; and (S5) selectively forming rods on the seed layers and then growing the rods.

Abstract: A device and method associated with carbon nanowires, such as single walled carbon nanowires having a high degree of alignment are set forth herein. A catalyst layer is deposited having a predetermined crystallographic configuration so as to control a growth parameter, such as an alignment direction, a diameter, a crystallinity and the like of the carbon nanowire. The catalyst layer is etched to expose a sidewall portion. The carbon nanowire is nucleated from the exposed sidewall portion. An electrical circuit device can include a single crystal substrate, such as Silicon, and a crystallographically oriented catalyst layer on the substrate having an exposed sidewall portion. In the device, carbon nanowires are disposed on the single crystal substrate aligned in a direction associated with the crystallographic properties of the catalyst layer.

Abstract: A field emitter device consistent with certain embodiments has a substantially planar conductor forming a gate electrode. A conductive stripe forms a cathode on the insulating layer. An insulating layer covers at least a portion of the surface between the cathode and the gate. An anode is positioned above the cathode. An emitter structure, for example of carbon nanotubes is disposed on a surface of the cathodes closest to the anode. When an electric field is generated across the insulating layer, the cathode/emitter structure has a combination of work function and aspect ratio that causes electron emission from the emitter structure toward the anode at a field strength that is lower than that which causes emissions from other regions of the cathode. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

Abstract: The present invention provides systems, devices, device components and structures for modulating the intensity and/or energies of electrons, including a beam of incident electrons. In some embodiments, for example, the present invention provides nano-structured semiconductor membrane structures capable of generating secondary electron emission. Nano-structured semiconductor membranes of this aspect of the present invention include membranes having an array of nanopillar structures capable of providing electron emission for amplification, filtering and/or detection of incident radiation, for example secondary electron emission and/or field emission. Nano-structured semiconductor membranes of the present invention are useful as converters wherein interaction of incident primary electrons and nanopillars of the nanopillar array generates secondary emission.

Abstract: An organic light emitting display including: a driving thin film transistor (TFT) including a semiconductor layer on a substrate including a source electrode, a drain electrode, and an N-type oxide semiconductor; at least one insulating layer formed on the driving TFT; a pixel defining layer for defining a pixel region on the insulating layer; a cathode electrode coupled to a drain electrode of the driving TFT and patterned to correspond to the pixel region; an electron injection layer arranged over the entire surfaces of the pixel defining layer and the cathode electrode and formed of a material whose band gaps are 3.0 eV to 5.0 eV selected from the group consisting of an oxide, a nitride, a fluoride, and diamond on; an organic light emitting layer formed on the electron injection layer to correspond to the cathode region; and an anode electrode formed on the organic light emitting layer.

Abstract: A method for preparation of carbon nanotubes (CNTs) bundles for use in field emission devices (FEDs) includes forming a plurality of carbon nanotubes on a substrate, contacting the carbon nanotubes with a polymer composition comprising a polymer and a solvent, and removing at least a portion of the solvent so as to form a solid composition from the carbon nanotubes and the polymer to form a carbon nanotube bundle having a base with a periphery, and an elevated central region where, along the periphery of the base, the carbon nanotubes slope toward the central region.

Abstract: A Carbon NanoTube (CNT) structure includes a substrate, a CNT support layer, and a plurality of CNTs. The CNT support layer is stacked on the substrate and has pores therein. One end of each of the CNTs is attached to portions of the substrate exposed through the pores and each of the CNTs has its lateral sides supported by the CNT support layer. A method of vertically aligning CNTs includes: forming a first conductive substrate; stacking a CNT support layer having pores on the first conductive substrate; and attaching one end of the each of the CNTs to portions of the first conductive substrate exposed through the pores.

Abstract: A light emitting device includes an insulating board, a metal member, a light emitting element, a conductive member, and a transparent member. The insulating board defines a through hole. The metal member is inserted into the through hole. The light emitting element is mounted on the top surface of the metal member. The conductive member is formed on the insulating board and is electrically connected to the light emitting element. The transparent member covers the light emitting element and the top surface of the insulating board. The metal member has a substantially stepped rectangle in a cross-sectional view. The top surface of the substantially stepped rectangle of the metal member projects higher than the top surface of the insulating board. The insulating board is mated with the metal member.

Abstract: A structure includes a substrate and a metallized carbon nano-structure extending from a portion of the substrate. In a method of making a metallized carbon nanostructure, at least one carbon structure formed on a substrate is placed in a furnace.

Abstract: A semiconductor photocathode 1 includes: a transparent substrate 11; a first electrode 13, formed on the transparent substrate 11 and enabling passage of light that has been transmitted through the transparent substrate 11; a window layer 14, formed on the first electrode 13 and formed of a semiconductor material with a thickness of no less than 10 nm and no more than 200 nm; a light absorbing layer 15, formed on the window layer 14, formed of a semiconductor material that is lattice matched to the window layer 14, is narrower in energy band gap than the window layer 14, and in which photoelectrons are excited in response to the incidence of light; an electron emission layer 16, formed on the light absorbing layer 15, formed of a semiconductor material that is lattice matched to the light absorbing layer 15, and emitting the photoelectrons excited in the light absorbing layer 15 to the exterior from a surface; and a second electrode 18, formed on the electron emission layer.

Abstract: A cavity free, broadband approach for engineering photon emitter interactions via sub-wavelength confinement of optical fields near metallic nanostructures. When a single CdSe quantum dot (QD) is optically excited in close proximity to a silver nanowire (NW), emission from the QD couples directly to guided surface plasmons in the NW, causing the wire's ends to light up. Nonclassical photon correlations between the emission from the QD and the ends of the NW demonstrate that the latter stems from the generation of single, quantized plasmons. Results from a large number of devices show that the efficient coupling is accompanied by more than 2.5-fold enhancement of the QD spontaneous emission, in a good agreement with theoretical predictions.

Abstract: A field emission cathode assembly that has a UV-blocking, insulating dielectric layer (3.4).

Abstract: A light-emitting diode (1) has a first electrode (3), a second electrode (4), a light-emitting layer (5) which comprises a matrix, and ions. A layer (6) of a cation receptor (CR) is positioned adjacent to the first electrode (3), has captured cations, and has generated immobilized cations (+). A layer (7) of an anion receptor (AR) is positioned adjacent to the second electrode (4), has captured anions, and has generated immobilized anions (?). The ion gradients provide for quick response in emission of light (L) when the diode (1) is exposed to a forward bias. A diode (1) is manufactured by first forming a laminate (2) of the above structure. The laminate (2) is exposed to a forward bias to make the ions become immobilized at respective sites (S1, S2) of the respective receptors (CR, AR).

Abstract: When to-be-detected light is made incident from a support substrate 2 side of a photocathode E1, a light absorbing layer 3 absorbs this to-be-detected light and produces photoelectrons. However, depending on the thickness and the like of the light absorbing layer 3, the to-be-detected light can be transmitted through the light absorbing layer 3 without being sufficiently absorbed by the light absorbing layer 3. The to-be-detected light transmitted through the light absorbing layer 3 reaches an electron emitting layer 4. A part of the to-be-detected light that has reached the electron emitting layer 4 proceeds toward a through-hole 5a of a contact layer 5. Since the length d1 of a diagonal line of the through-hole 5a is shorter than the wavelength of the to-be-detected light, the to-be-detected light can be suppressed from passing through the through-hole 5a and being emitted to the exterior.

Abstract: Particles, which may include nanoparticles, are mixed with carbon nanotubes and deposited on a substrate to form a cold cathode. The particles enhance the field emission characteristics of the carbon nanotubes. An additional activation step may be performed on the deposited carbon nanotube mixture to further enhance the emission of electrons.

Abstract: A semiconductor device has lateral conductors or traces that are formed of nanotubes such as carbon. A sacrificial layer is formed overlying the substrate. A dielectric layer is formed overlying the sacrificial layer. A lateral opening is formed by removing a portion of the dielectric layer and the sacrificial layer which is located between two columns of metallic catalysts. The lateral opening includes a neck portion and a cavity portion which is used as a constrained space to grow a nanotube. A plasma is used to apply electric charge that forms an electric field which controls the direction of formation of the nanotubes. Nanotubes from each column of metallic catalyst are laterally grown and either abut or merge into one nanotube. Contact to the nanotube may be made from either the neck portion or the columns of metallic catalysts.

Abstract: The present invention provides for an array of nanostructures grown on a conducting substrate. The array of nanostructures as provided herein is suitable for manufacturing electronic devices such as an electron beam writer, and a field emission device.

Abstract: Provided are a composition for preparing an electron emission source, including a nano-sized inorganic material and a vehicle, a method for preparing an electron emission source using the composition, an electron emission source including a nano-sized inorganic material and a small amount of a residual carbon, and further, an electron emission device including the electron emission source.

Abstract: A superlattice structure comprises a plurality of well layers made of first semiconductor and a plurality of barrier layers made of second semiconductor that has a band gap wider than that of the first semiconductor, wherein both layers are deposited alternately, and wherein a maximum thickness of each of the wall and barrier layers is such that a band gap between a lower limit of a mini band generated in a conduction band and an upper limit of a mini band generated in a valence band is a given width in the energy state of electron of the superlattice structure, and a minimum thickness of each of the wall and the barrier layers is such that a bandwidth of a mini band generated in the conduction band is a given width in the energy state of electron of the superlattice structure.

Abstract: The present invention provides for nanostructures grown on a conducting substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for manufacturing electronic devices such as an electron beam writer, and a field emission display.

Abstract: A solid-state optical device includes a solid-state element, a power supplying/retrieving portion on which the solid-state element is mounted, the power supplying/retrieving portion supplying or retrieving electric power to/from the solid-state element, and a glass sealing material that seals the solid-state element. The glass sealing material has a thermal expansion coefficient equivalent to that of the power supplying/retrieving portion. The glass sealing material includes a P2O5—Al2O3—ZnO-based low-melting glass that includes 55 to 62 wt % of P2O5, 5 to 12 wt % of Al2O3 and 20 to 40 wt % of ZnO in weight %.

Abstract: A semiconductor device such as a complementary metal oxide semiconductor (CMOS) including at least one FET that includes a gate electrode including a metal carbide and method of fabrication are provided. The CMOS comprises dual work function metal gate electrodes whereby the dual work functions are provided by a metal and a carbide of a metal.

Abstract: An organic light emitting diode display having a driving circuit portion for driving an organic light emitting diode portion that includes a thin film transistor that has a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and is disposed between the organic light emitting diode portion and the driving circuit substrate, and a storage capacitor that has lower and upper electrodes and a dielectric layer interposed therebetween and is disposed on the organic light emitting diode portion is provided. The thin film transistor is formed between the organic light emitting diode portion and the driving circuit substrate, and the storage capacitor is formed on the organic light emitting diode portion.

Abstract: Nanostructured surface materials having patterned indents are disclosed and there use for catalytic, therapeutic, herbicidal, pesticidal, antiviral, antibacterial and antifungal applications is disclosed.

Abstract: Provided are nano wires and a method of manufacturing the same. The method includes forming microgrooves having a plurality of microcavities, the microgrooves forming a regular pattern on a surface of a silicon substrate; forming a metal layer on the silicon substrate by depositing a material which acts as a catalyst to form nano wires on the silicon substrate; agglomerating the metal layer within the microgrooves on the surface of the silicon substrate by heating the metal layer to form catalysts; and growing the nano wires between the catalysts and the silicon substrate using a thermal process.

Abstract: A method for preparing TEM sample, comprising the following steps: providing a sample with two pits and a failure region between the two pits, the failure region comprising a semiconductor device; milling the first surface of the failure region, till the cross section of the semiconductor device is exposed; etching the first surface of the failure region; cleaning the sample; milling the second surface of the failure region, till the failure region can be passed by electron beam. A sample can be prepared for a high resolution TEM through above steps. When the sample is observed, it is easy to distinguish the lightly doped drain, source/drain regions from the silicon substrate and observe the pattern and defects in the lightly doped drain, source/drain regions clearly; in addition, it is easy to distinguish the BPSG from the non-doped silicon dioxide in the failure region.

Abstract: The present invention provides systems, devices, device components and structures for modulating the intensity and/or energies of electrons, including a beam of incident electrons. In some embodiments, for example, the present invention provides nano-structured semiconductor membrane structures capable of generating secondary electron emission. Nano-structured semiconductor membranes of this aspect of the present invention include membranes having an array of nanopillar structures capable of providing electron emission for amplification, filtering and/or detection of incident radiation, for example secondary electron emission and/or field emission. Nano-structured semiconductor membranes of the present invention are useful as converters wherein interaction of incident primary electrons and nanopillars of the nanopillar array generates secondary emission.

Abstract: A thermal electron emitter includes at least one carbon nanotube twisted wire and a plurality of electron emission particles mixed with the twisted wire. The carbon nanotube twisted wire comprises a plurality of carbon nanotubes. A work function of the electron emission particles is lower than the work function of the carbon nanotubes. A thermal electron emission device using the thermal electron emitter is also related.

Abstract: The present invention provides an electromagnetic wave generation apparatus that is compact and generates a high power terahertz wave. An electromagnetic wave generation apparatus includes: a substrate; a first electrode, having a photoelectron emitting part, formed on one of the surfaces of the substrate; a second electrode formed on the surface of the substrate; a power supply source that applies voltage to between the first electrode and the second electrode so that the potential of the second electrode becomes higher than the potential of the first electrode; and a light source that radiates one of time modulated light and wavelength modulated light, and in the apparatus, the photoelectron emitting part (a) emits electrons when light is irradiated and (b) is placed at a position which an incident light from the light source enters and from which the emitted electrons run to the electron incidence plane of the second electrode.

Abstract: Structures and methods to inject electrons into an insulator from a semiconductor layer that are then collected in a thin layer of a direct semiconductor material which in turn emits light by bandgap recombination.

Abstract: A novel photocathode employing a rectifying junction is described that permits color imaging extending applications for photocathodes in a variety of instruments and night vision devices.

Abstract: A field emission display device and a method of fabricating the same are provided. The field emission display device may include a substrate, a transparent cathode layer, an insulation layer, a gate electrode, a resistance layer, and carbon nanotubes. The transparent cathode layer is deposited on the substrate. The insulation layer is formed on the cathode layer and has a well exposing the cathode layer. The gate electrode is formed on the insulation layer and has an opening corresponding to the well. The resistance layer is formed to surround the surface of the gate electrode and the inner walls of the opening and the well so as to block ultraviolet rays. The carbon nanotube field emitting source is positioned on the exposed cathode layer.

Abstract: A light emitting device which can be easily manufactured and can control the positions of light emission precisely, and an optical device. A first and second light emitting elements are formed on one face of a supporting base. The first light emitting element has an active layer made of GaInN mixed crystal on a GaN-made first substrate on the side thereof on which the supporting base is disposed. The second light emitting element has lasing portions on a GaAs-made second substrate on the side thereof on which the supporting base is disposed. Since the first and second light emitting elements are not grown on the same substrate, a multiple-wavelength laser having the output wavelength of around 400 nm can be easily obtained. Since the first substrate is transparent in the visible region, the positions of light emitting regions in the first and second light emitting elements can be precisely controlled by lithography.

Abstract: Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride semiconductor layer provided adjacent to the first group III nitride semiconductor layer and made of a thin-film crystal having c-axis orientation in a thickness direction, the second group III nitride semiconductor layer having an Al composition higher than that of the first group III nitride semiconductor layer.

Abstract: A light emitting device capable of efficiently dissipating heat outward, and a method producing it are provided. The light emitting device includes an insulating board, a metal member, a light emitting element, a conductive member and a transparent member. The insulating board has a through hole. The metal member is inserted into the through hole. The light emitting element is mounted on the top surface of the metal member. The conductive member is formed on the insulating board and is electrically connected to the light emitting element. The transparent member covers the light emitting element and the top surface of the insulating board. The conductive member is continuously formed from the top surface to the bottom surface of the insulating board. The bottom surface of the metal member is substantially coplanar with the bottom surface of the conductive member on the bottom surface side of the insulating board.