Abstract: The present invention provides a method and apparatus which facilitates wafer level burn-in testing of semiconductor dies. Sacrificial busses on the wafer supply voltage to respective on die Vcc and Vss sacrificial voltage pads during burn-in testing. The Vcc sacrificial pad on each die is connected to a secondary Vcc pad through an on-die sacrificial metal bus. An on-die fuse is interposed between the secondary Vcc pad and a normal Vcc die bonding pad. The fuse will blow when a die draws excessive current isolating a defective die from other dies on the wafer which are connected to the sacrificial busses. The Vss sacrificial pad is connected to a normal Vss die bonding pad through a sacrificial metal bus. After burn-in testing, the structures are removed. During this removal, the on-die sacrificial metal busses protect the secondary Vcc pad and Vss bonding pad. The secondary Vcc pad, Vcc bonding pad and Vss bonding pad can then be exposed for additional die testing.

Abstract: This invention discloses a multiple-chip module (MCM) device supported on a semiconductor wafer. The MCM device includes a core module that has a plurality of logic circuits having a layer structure formed by a logic circuit manufacturing process for performing logic functions of said MCM device. The MCM device further includes at least an input/output (I/O) module disposed next to and separate from the core module comprising a plurality of I/O circuits having a layer structure formed by an I/O circuit manufacturing process for performing input/output functions for said MCM device. The core module is flipped to have face-to-face contacts with a plurality of inter-module contact points disposed on the I/O module.

Abstract: A flip-chip package board having signal bump pads, power bump pads and ground bump pads grouped together into respective inner bump pad rows and sequentially laid down on one side of the group of core bump pads so that the power bump pad row and the ground bump pad row alternate between signal bump pad rows. In addition, the outer bump pads are positioned in such a way that the shortest possible separation between neighboring outer bump pads is used. This invention also provides a flip chip having an active surface with a plurality of die pads thereon that corresponds in position to the bump pads on the flip-chip package board.

Abstract: A package of a semiconductor chip with array-type bonding pads. The semiconductor chip has a plurality of bonding pads located about periphery of the chip, in which the semiconductor chip is characterized at the bonding pads being positioned in at least four rows along each side of the chip, the four rows comprising an inner row, a mid-inner row, a mid-outer row, and an outer row. The inner row and the mid-inner row of the bonding pads consist of signal pads, and the outer row and the mid-outer row of the bonding pads consist of power pads and ground pads.

Abstract: An interconnect bus for a microelectromechanical system is disclosed. Various attributes for an electrical trace bus that facilitate the routing of signals throughout at least a portion of the system and/or the layout of the microelectromechanical system on a wafer are disclosed.

Abstract: When static electricity having an excessive voltage is applied to a VSS terminal, the static electricity may be transmitted to an inner cell directly connected to a VSS cell before the static electricity is discharged to the outside via an electrostatic protection circuit, possibly resulting in electrostatic destruction. Bypasses are thus provided to bypass the static electricity applied to a VSS terminal to a higher wiring layer, which allow only excessive static electricity to be selectively discharged to the outside via an electrostatic protection circuit.

Abstract: A flip chip type semiconductor device for reducing signal skew includes: a chip with bonding pads, and a plurality of bumping pads on the chip. Between each bonding pad and corresponding bumping pads is connected with a metal redistribution trace covered by a passivation layer. Each metal trace has an equal trace length for reducing signal skew.

Abstract: To provide a semiconductor chip in which area occupied by TEG elements or area occupied by TEG-measuring electrode pads in the semiconductor chip can be reduced without reducing the number of TEG elements and complicating circuit configuration. The TEG element is formed in an empty space existing between an assembly and TEG-measuring electrode pad and the TEG-measuring electrode pad. An assembly electrode pad and the assembly and TEG-measuring electrode pad are electrically connected to a semiconductor element through internal wiring, and the assembly and TEG-measuring electrode pad and the TEG-measuring electrode pad are connected to the TEG element through an internal wiring.

Abstract: Disclosed herewith is a semiconductor device improved to prevent withstand voltage defects that might occur in each MOSFET used therein and a system to be designed easily and prevented from withstand voltage defects that might occur in each semiconductor used therein. The system includes the first and second input circuits, each being constituted by MOSFETs manufactured in the same process. The first input circuit receives a voltage of a first signal inputted from a first external terminal and divided by first and second resistor means while the AC component of the input signal is transmitted to the input circuit through a capacitor disposed in parallel to the first resistor means. The second input circuit receives a second input signal inputted from a second external terminal and reduced in signal amplitude so as to become smaller than that of the first input signal.

Abstract: A semiconductor device is provided comprising a die. A first set of plural components, other than interface components, are located on the die surface. A first conductor located on the die surface connects to each component of the first set. A second set of plural components, other than said interface components, are located on the die surface. A second conductor located on the die surface connects to each component of the second set. A bonding pad is located on the die surface such that the first set of components lie between the bonding pad and an edge of the die and the second set of components lie between the bonding pad and an opposing edge of the die. The bonding pad is for receiving or transmitting one or more signals via the first and second conductors. At least one lead frame finger extends to an edge of the die but does not overlie the die. A bonding wire connects the at least one finger to the bonding pad.

Abstract: A first repair chip, wherein BANK 2 functions properly although BANKs 0, 1 and 3 have become defective, and a second repair chip, wherein BANKs 1, 2 and 3 function properly although BANK 0 has become defective, are mounted on a rear surface of a module substrate in order to substitute for the functions of BANK 2 of the first bare chip and of BANKs 1 and 2 of the second bare chip that have become defective on the front surface of the module substrate. Thereby, a semiconductor memory module is obtained that can be repaired by mounting chips that carry out functions substituting for those of defective banks while effectively utilizing the functions of other banks that are not defective.

Abstract: A method for designing an input output cell of an integrated circuit. The input output cell has a required area, a width, and a height. The bonding pad pitch length between adjacent bonding pads of the integrated circuit is measured. The width of the input output cell is specified to be substantially equal to the bonding pad pitch length. The required area is divided by the width to determine a first value, and the height of the input output cell is specified to be substantially equal to the first value. In this manner, the width of the input output cells is no greater than the distance between two adjacent bonding pads, and thus the input output cells can be placed very close together, facilitating their use in input output limited integrated circuit designs. However, the height of the input output cells is no greater than is necessary to enclose the required area of the input output cell, thus facilitating their use in core limited integrated circuit designs.

Abstract: An apparatus for routing signals to and from at least one circuit component that has a plurality of input/output leads includes a support structure having a first side and a second side. The first side is adapted to have the input/output leads of the circuit component attached thereto. A signal routing strip having a first end and a second end is also included. The first end of the routing strip is configured and adapted to be electrically connected to the input/output leads of the circuit component for transmitting signals to and from the circuit component.

Abstract: A new method is provided that allows placing or stacking staggered bond I/O buffers into linear bond I/O buffers. The bond pads are linearly arranged, the interface between the staggered bond pad I/O buffers and the linearly arranged bond pads is achieved by a frame design that sequentially connects the staggered bond pad I/O buffers to the linearly arranged bond pads.

Abstract: A method and structure to electrically couple a semiconductor device to a substrate that is divided into a plurality of segments. Alternatively, a semiconductor device may be divided into a plurality of segments and the plurality of segments are electrically coupled to a single substrate.

Abstract: An interconnect bus for a microelectromechanical system is disclosed. Various attributes for an electrical trace bus that facilitate the routing of signals throughout at least a portion of the system and/or the layout of the microelectromechanical system on a wafer are disclosed.

Abstract: An metal programmable integrated circuit apparatus and method of manufacture and design using elevated metal layers for design-specific customization. The lower metal layer are used to form core cells and to provide power and clocking signals to the core cells. These core cell are customizable by the designer using only the upper metal layers. This new architecture allows faster turn-around time and fewer masks while keeping the time-to-market advantages of gate array structures.

Abstract: A gate array comprises a core cell having a plurality of logic gates, a power supply pattern provided beside the core cell for providing electrical power to the core cell, and a border element provided beside the power supply pattern for providing capacitance or resistance to the core cell. The border element has a capacity cell including a transistor that provides the capacitance to the core cell, a resistor cell including a transistor that provides resistance to the core cell, and a material having resistance to be provided to the core cell.

Abstract: Wire bonding or printed wiring board leads or, alternatively, lead frames or equivalents thereof are used to electrically connect external electrodes of high withstand voltage capacitors formed on a plurality of semiconductor chips. A driver circuit for signal transmission or receiver circuit for signal receipt formed on the semiconductor chips are electrically connected with substrate-side electrodes of said high withstand voltage capacitors, causing the plurality of semiconductor chips to be received within either a single package or a single module. Using this arrangement, a semiconductor device is capable of achieving both dielectricity and size reduction.

Abstract: Within a method for forming a memory cell structure there is provided a field effect transistor (FET) device having electrically connected to one of its source/drain regions a storage capacitor and electrically connected to the other of its source/drain regions a bitline stud layer separated from and rising above the storage capacitor. Within the memory cell structure, and at a minimum storage capacitor to bitline stud layer separation, a capacitor plate layer is further separated from the bitline stud layer than a capacitor node layer.

Abstract: A semiconductor device suppressing increase of the number of types of exposure mask for implantations, preventing complication of manufacturing steps and suppressing the manufacturing cost and manufacturing steps therefor are provided. An impurity implantation region (R81) is formed by first implantation with an exposure mask for implantation having an opening at the lower right and this exposure mask for implantation is turned over for forming another impurity implantation region (R82) by second implantation, thereby forming three types of impurity implantation regions including the impurity implantation region (R81) formed through the first implantation, the impurity implantation region (R82) formed through the second implantation and still another impurity implantation region (R83) formed through the first implantation and the second implantation. Four types of regions inclusive of a region (R84) not subjected to impurity implantation can be formed with a single type of exposure mask for implantation.

Abstract: A semiconductor memory device having a hierarchical I/O line structure is provided. The semiconductor memory array includes a memory cell array which is divided into a plurality of sub-arrays by sub-word line driver areas and bit line sense amplifier areas; local input/output (I/O) lines which are arranged in the bit line sense amplifier areas; and global I/O lines which are arranged in the sub-word line driver areas, wherein at least one end of each of the local I/O lines is formed in a bit line sense amplifier area. The semiconductor memory device may also have a dummy bit line sense amplifier area capable of dividing local I/O lines in a bit line sense amplifier area, and can reduce the number of sub-word line driver areas such that the chip size can be reduced.

Abstract: A semiconductor device having electrodes formed along a peripheral part thereof in a staggered arrangement of lines including inside-line electrodes, central-line electrodes and outside-line electrodes. The inside-line electrodes are hexagonal shaped with hypotenuses on the central-line electrodes sides thereof. The central-line electrodes are hexagonal shaped with hypotenuses on the inside-line electrode sides thereof. The maximum width of the outside-line electrode wires immediately between the hypotenuses of adjacent inside-line and central-line electrodes depends on the distance between the centers of the inside-line and central-line electrodes, the minimum lengths of the inside-line and central-line electrodes and the electrode protective film, and the minimum length of the corresponding wire. The position and form of the central line electrodes are thus determinable based on the given relationship and the necessary value of current.

Abstract: Development efficiency and mass production efficiency of a semiconductor chip (LSI) is improved, whereby the LSI on which an integrated circuit is formed has plural pad parts connecting the integrated circuit with an external circuit. The pad part is provided with a first junction consisting of a window formed in the protective film and the pad exposed from the window, and a second junction consisting of a window formed in the protective film and a bump deposited on the pad exposed from the window. When it is required that the LSI is to be connected with an external circuit by wire bonding, the first junction is connected with the external circuit using a wire. When it is required to connect the LSI with an external circuit by the TAB method or the COG method, the second junction is directly connected to the external circuit.

Abstract: The present invention relates to an integrated circuit, at least one portion of which includes at least one group of standby cells for possible connection to said portion of the integrated circuit by replacement connections, the length of which cannot exceed a predetermined value. The inputs and outputs of the standby cells are connected to metal standby tracks being disposed on the circuit such that any node of the circuit portion is distant by at most said predetermined value from any point on the tracks.

Abstract: A base cell for a gate array or standard cell integrated circuit design has N and P wells organized in checkerboard fashion, each well containing several P and N devices respectively. A first of the plurality of relatively deep P regions is adjacent to at least a first and a second of the plurality of relatively deep N regions. The first relatively deep N region is adjacent to the first relatively deep P region along a first edge of the first relatively deep N region, and to the second relatively deep P region along a second edge of the relatively deep N region. The first and second edges of the relatively deep N region are perpendicular. An array of the base cells therefore has a checkerboard pattern, unlike the striped pattern of typical gate array and standard cell designs. The array of the base cells is amenable to minimizing clock parasitic capacitance when clocked inverters, including the complimentary clocked inverters of latches, are laid out at vertexes of the checkerboard pattern.

Abstract: There is provided a large capacity memory such as a DRAM and an SDRAM in which bonding pads PS and PD are not located at the center, but are displaced from the center between memory array regions UL and UR, disposed on the upper side of a four-bank structure of banks 0 through 3, and memory array regions DL and DR, disposed on the lower side thereof. Secondly, the disposition of the bonding pads PS and PD is staggered on the right and left such that the right half bonding pads PD are shifted up relative to the left half bonding pads by about 30 &mgr;m. Only a sense amplifier, a column decoder and a main amplifier, which need to be near to the memory array regions DL and DR, are disposed between the bonding pads PS and PD, and the lower memory array regions DL and DR, and further indirect peripheral circuits are disposed on the upper side of the bonding pads PS and PD.

Abstract: A plurality of capacitors of which the sidewalls, that are storage nodes, extend in the vertical direction are aligned in the horizontal direction. Storage node has a rectangular form made of longer sides and shorter sides in the plan view. A long side of storage node extends, in the plan view, in the direction in which a line extends connecting a first storage node contact and a second storage node contact that is positioned diagonally adjacent to first storage node contact. According to the invention, the capacitance of a memory capacitor is increased.

Abstract: The present invention provides an integrated circuit with high-frequency signals immune from noises. The integrated circuit has a chip having a first pad and a plurality of second pads, wherein an AC signal and DC signals are transmitted through the first pad and the second pads respectively, a substrate having a first finger and a plurality of second fingers, a first conducting line connected between the first pad and finger respectively of the chip and substrate, and a plurality of second conducting lines connected between the second pads and fingers respectively of the chip and substrate, and surrounding the first conducting line.

Abstract: Development efficiency and mass production efficiency of a semiconductor chip (LSI) is improved, whereby the LSI on which an integrated circuit is formed has plural pad parts connecting the integrated circuit with an external circuit. The pad part is provided with a first junction consisting of a window formed in the protective film and the pad exposed from the window, and a second junction consisting of a window formed in the protective film and a bump deposited on the pad exposed from the window. When it is required that the LSI is to be connected with an external circuit by wire bonding, the first junction is connected with the external circuit using a wire. When it is required to connect the LSI with an external circuit by the TAB method or the COG method, the second junction is directly connected to the external circuit.

Abstract: An MOS integrated circuit, such as an input-output buffer, exhibits improved resistance to damage from electrostatic discharge (ESD) by balancing the ESD current flow through active and inactive sections of drivers. Better balance of the ESD current flow is achieved by increasing the width and length of nulti-finger channels of semiconductor material defining the gates of the drivers in the active section. Wider, longer gates of the drivers in the active section increase their ability to carry current, thereby resulting in a more symmetrical distribution of ESD current between the active and inactive sections without degrading the IC's normal performance.

Abstract: Integrated circuits are tested on the wafer level through an additional circuit part that is electrically connected via at least one connecting line with the associated integrated circuit. The additional circuit part is integrated into an interspace between the integrated circuits of the wafer. Functions of the integrated circuit can be controlled via the connecting line. For example, in the case of a memory module such as a DRAM, internal voltages and/or currents of the integrated circuit can advantageously be measured even on internal lines which are otherwise only accessible with difficulty. Following the wafer-level testing and dicing of the integrated circuits into individual chips, the additional circuit part becomes unusable.

Abstract: A semiconductor integrated circuit is capable of filling the need for more memory space through the effective use of an already-designed core block. A block (1) including a CPU, an array (4a) of a plurality of bonding pads, and RAMs (21a, 22a) which are first memories located on the same side of the array (4a) as the block (1) are already designed. The requirement for increased memory capacity can be filled with ease by the addition of RAMs (24a, 25a) which are second memories located on the opposite side of the array (4a) from the block (1). Since the second memories are different in physical configuration from the first memories, it is easy to design a physical configuration to achieve required memory capacity outside a core block (8a) within a single-chip microcomputer (9c).

Abstract: A semiconductor test chip including a plurality of test functions. The test functions of the semiconductor test chip include bond pad pitch and size effects on chip design, wire bond placement accuracy regarding placement of the wire bond on the bond pad, evaluation of bond pad damage (cratering) effect on the area of the chip below the bond pad during bonding of the wire on the bond pad, street width effects regarding the use of thinner saw cuts in cutting the individual chips from the wafer, thermal impedance effects for thermal testing capabilities, ion mobility evaluation capabilities and chip on board in flip chip application test capabilities.

Abstract: A packaging substrate is formed with staggered vias interconnecting fan-out circuitry for improved strength and rigidity. Embodiments of the present invention include substrates wherein less than 20% of the vias are aligned.

Abstract: A lead frame for an integrated circuit includes a ground for the integrated circuit to ground the integrated circuit, the lead frame having at least one corner connected to the ground; and a connector between the corner of the lead frame and the ground located on the integrated circuit.

Abstract: A semiconductor integrated circuit device comprises vertical power supply wiring 12 divided into first and second narrow-width vertical power supply wirings 12a and 12b, vertical ground wiring 14 disposed in parallel with vertical power supply wiring 12 and divided into first and second narrow-width vertical ground wirings 14a and 14b, auxiliary vertical power supply wiring 22 connecting first narrow-width vertical power supply wiring 12a and second narrow-width vertical power supply wiring 12b, and auxiliary vertical ground wiring 24 connecting first narrow-width vertical ground wiring 14a and second narrow-width vertical ground wiring 14b.

Abstract: A semiconductor wafer having dice that include circuitry that is placed into a mode when the circuitry receives an alternating signal having certain characteristics. The alternating signal may be supplied from a system controller through a probe, probe pad, and conductive path on the wafer. In a preferred embodiment, the conductive path simultaneously carries a VCC power signal and the alternating signal to the circuitry. However, the alternating signal may be carried on a conductive path different from the one carrying the VCC signal. A great deal of information may be conveyed through the alternating signal, making other signals unnecessary in controlling, testing, stressing, and repairing dice on the wafer. For example, clocking information may be conveyed through the alternating signal. The circuitry may be placed in different modes in response to different characteristics of the alternating signal. The alternating signal and a VCC power signal are received through a single contact on each die.

Abstract: A pin grid array package comprises a number of signal pins and ground pins. At least one of the signal pins is a controlled impedance signal pin, i.e. a signal pin whose impedance is adjusted and/or reduced according to the present invention. The pin grid array package also includes a number of ground planes and signal planes. A controlled impedance signal pin is coupled to one of the signal planes by means of a signal via. A number of ground pins surround the controlled impedance signal pin. By varying the arrangement, number, and separation distance between the ground pins and the controlled impedance signal pin, the impedance of the signal pin is adjusted and/or reduced. Depending on the particular circuit or logic function assigned to a signal pin and its adjacent signal pin, a different degree of impedance control and/or reduction can be achieved by the present invention.

Abstract: A semiconductor device comprises: a first resistor which has a plurality of first connection points to be selectively connected to an input terminal of an amplifier and has both ends to which a voltage is applied; and a second resistor which has one end to be connected to an output terminal of the amplifier and has a plurality of second connection points to be selectively connected to a feedback input terminal of the amplifier. One of the first connection points and one of the second connection points are selected in such a manner that a voltage at the output terminal of the amplifier becomes constant. Each of the first and second resistors is formed of first reference resistors having a first reference length and second reference resistors having a second reference length as many as needed, both of which are connected by an interconnect layer. The first and second reference resistors for forming the first and second resistors are provided in an effective resistor region and are regularly arranged.

Abstract: A semiconductor chip has a circuit block, a power supply line and a ground line. A condenser chip in which a noise reduction condenser connected to the circuit block is stacked on the semiconductor chip. Because the condenser chip is stacked on the semiconductor chip, it is not necessary to provide a noise reduction condenser on the semiconductor chip and also not to provide a noise reduction condenser on a substrate on which the semiconductor chip is mounted.

Abstract: A method of fabricating a semiconductor package that may contain two or more dies. The method generally comprises the steps of (A) mounting a first die having a first side on an assembly apparatus and (B) mounting a second die having a second side and an adjoining third side on said assembly apparatus. The second die may be oriented such that (i) the second side and the third side both face the first side and (ii) the second side and the third side are both substantially nonparallel to the first side.

Abstract: A routing element for use with a multi-chip module. The routing element includes a substrate that carries conductive traces that provide either additional electrical paths or shorter electrical paths than those provided by a multi-chip module substrate. The conductive traces may be carried upon a single surface of the routing element substrate, internally by the routing element substrate, or include externally and internally carried portions. The routing element also includes a contact pad positioned at each end of each conductive trace thereof to facilitate electrical connection of each conductive trace to a corresponding terminal of the substrate or to a corresponding bond pad of a semiconductor device of the multi-chip module. Multi-chip modules are also disclosed, as are methods for designing the routing element and methods in which the routing element is used.

Abstract: MOS transistors (TR1, TR2) are arranged closer to a pad (SP) in descending order of current-driving capability. Namely, the MOS transistors (TR1, TR2) are arranged from closer part to the pad (SP) in descending order of value of W/L obtained by dividing a gate width (W) of a gate electrode by a gate length (L) of the same. When a transistor has a large current-driving capability, the value of source-to-drain current is high. For this reason, the MOS transistors are arranged from closer part to the pad for source electrode in descending order of current-driving capability, to thereby reduce the amount of voltage drop in an interconnect line. A current value of the transistor becomes lower as a distance between the pad and the transistor increases. As a result, it is allowed to reduce influence on the transistor characteristics exerted by voltage drop due to interconnection resistance.

Abstract: A semiconductor device having self-aligned contact pads and a method for manufacturing the same are provided. The semiconductor device includes a semiconductor substrate and an isolation layer formed on the semiconductor substrate. The semiconductor substrate defines a plurality of active regions that each have a major axis and a minor axis. A plurality of gates are formed to cross the plurality of active regions and extend in the direction of the minor axis. First and second source/drain regions are formed in active regions at either side of each of the gates. First and second self-aligned contact pads (SACs) are formed to contact the top surfaces of the first and second source/drain regions, respectively.

Abstract: An architecture to efficiently handle primary input and output signals for an embedded FPGA core in an ASIC is disclosed. Only the FPGA core is used without wire-bonding pads and pad ring found in conventional embedded FPGAs. The input and outputs of the embedded FPGA core can be made peripherally or at selected locations throughout the core to obtain high I/O-to-logic ratios and flexibility in I/O placement with high routability.

Abstract: An inverter module includes a plurality of leads arranged according to a ZIP. A lead (101U, 101V, 101W) serving as a load side output terminal and a lead (104U, 104V, 104W) serving as a high-potential side control input terminal are bent toward directions opposite to each other. A lead (107U, 107V, 107W) serving as a low-potential side control input terminal is arranged at a distance four times a terminal pitch from the lead serving as the load side output terminal (101U, 101V, 101W).

Abstract: In a semiconductor device provided with a plurality of standard cells each comprising an input terminal and MOS transistors, a diffused region having a substantially negligibly small resistance is formed in a semiconductor substrate, and the input terminal of the standard cell and gates of the MOS transistors are connected through the diffused region. Also, a diffused region is formed under the input terminal in the substrate, and the input terminal is connected to the diffused region. In a modification, another standard cell is formed by forming a diffused region and a metal layer connected to the diffused region on the substrate, and the another standard cell is connected to the input terminal.

Abstract: A semiconductor integrated circuit device in which connections within and between logic unit cells can be efficiently made is provided. Logic unit cells each including a plurality of basic cells are extended in an X-direction. To form one logic unit cell, second-layer wiring regions for making connections within the logic unit cell are formed in the X-direction, i.e., the extending direction. If there are five Y-coordinate channels, the second-layer wiring regions are formed only at one Y-coordinate channel. Second-layer wiring regions for connecting logic unit cells are also formed in the X-direction, and can be situated at any of the remaining four Y-coordinate channels.

Abstract: An external interconnection unit including a pad provided on a semiconductor chip, a bump electrode formed on a main surface of a semiconductor chip for connection with the board, and a connection interconnection for connecting the pad and the bump electrode is provided in a plurality of stages in two rows in parallel. The bump electrode is provided on a region other than the region of a sense amplifier region (SR). A semiconductor package having reliability as a semiconductor device prevented from being degraded, and a semiconductor package effectively taking advantage of the feature of a CSP structure is provided.