Abstract: A method of fabricating a semiconductor device includes forming an intermediate semiconductor device having dummy gate material and an oxide layer. The intermediate semiconductor device includes a substrate, fins, a shallow trench isolation layer, an oxide layer, and an interlayer dielectric. The dummy gate material and the oxide layer are removed. A high k dielectric material is deposited on a top surface of the shallow trench isolation layer. A replacement metal gate stack is deposited. Gate cut lithographing patterning is performed to open portions of the gate. The replacement metal gate stack and the interlayer dielectric are etched. A cap layer is deposited on exposed ends of at least two replacement metal gate. Trenches are filled with the interlayer dielectric and the semiconductor device is formed. Selective deposition of the insulating material on the ends of the replacement metal gates prevents gate end shorts.

Abstract: In an embodiment, a method includes forming an intentionally doped superlattice laminate on a support substrate, forming a Group III nitride-based device having a heterojunction on the superlattice laminate layer, and forming a charge blocking layer between the heterojunction and the superlattice laminate.

Abstract: A liquid crystal display includes a first substrate including pixels arranged in m columns by n rows, n data lines disposed, m gate lines arranged substantially parallel to the data lines, n data distribution lines arranged to cross the m gate lines and electrically connected to the data lines, respectively, source driving chips disposed on a first portion of the first substrate, and a gate driver disposed on a second portion of the first substrate. Each of the data distribution lines is connected to a subset of the pixels arranged in a corresponding row, and each of the gate lines is connected to a subgroup of the pixels arranged in a corresponding column. The source driving chips apply data signals to the pixels through the first data lines and the data distribution lines, and the gate driver applies gate signals to the pixels through the gate lines.

Abstract: A modular interconnect structure facilitates building complex, yet compact, integrated circuits from vertical GAA FETs. The modular interconnect structure includes annular metal contacts to the transistor terminals, sectors of stacked discs extending radially outward from the vertical nanowires, and vias in the form of rods. Extension tabs mounted onto the radial sector interconnects permit signals to fan out from each transistor terminal. Adjacent interconnects are linked by linear segments. Unlike conventional integrated circuits, the modular interconnects as described herein are formed at the same time as the transistors. Vertical GAA NAND and NOR gates provide building blocks for creating all types of logic gates to carry out any desired Boolean logic function. Stacked vertical GAA FETs are made possible by the modular interconnect structure. The modular interconnect structure permits a variety of specialized vertical GAA devices to be integrated on a silicon substrate using standard CMOS processes.

Abstract: The invention provides a scan driving circuit for an oxide semiconductor thin film transistor and a NAND logic operation circuit thereof. The NAND logic operation circuit includes: a first inverter and a second inverter applied to a pull-down holding circuit of a GOA circuit, and multiple transistors. The invention uses the combination of NFTF and inverter to replace a function of original PMOS elements and thereby achieves characteristics similar to that of the original CMOS NAND operation circuit. Accordingly, the invention can solve the design problem of IGZO TFT single type of device logic operation circuit and thus is more suitable for integrating a large scale digital integrated circuit on a liquid crystal display device.

Abstract: Provided is a semiconductor device, including gate structures on a substrate, the gate structures extending parallel to a first direction and being spaced apart from each other by a separation trench interposed therebetween, each of the gate structures including insulating patterns stacked on the substrate and a gate electrode interposed therebetween; vertical pillars connected to the substrate through the gate structures; an insulating spacer in the separation trench covering a sidewall of each of the gate structures; and a diffusion barrier structure between the gate electrode and the insulating spacer.

Abstract: A vertical FinFET semiconductor device and a method of forming the same are disclosed. In one aspect, the semiconductor device includes a current-blocking structure formed over a semiconductor structure and a semiconductor fin formed on the current-blocking structure. The current blocking structure includes a first layer of a first conductive type, a layer of a second conductive type over the first layer, and a second layer of the first conductive type over the layer of the second conductive type. The semiconductor fin has a doped bottom portion contacting the current-blocking structure, a doped top portion formed vertically opposite to the doped bottom portion and a channel portion vertically interposed between the doped bottom portion and the doped top portion.

Abstract: Techniques are disclosed for forming contacts in silicon semiconductor devices. In some embodiments, a transition layer forms a non-reactive interface with the silicon semiconductor contact surface. In some such cases, a conductive material provides the contacts and the material forming a non-reactive interface with the silicon surface. In other cases, a thin semiconducting or insulating layer provides the non-reactive interface with the silicon surface and is coupled to conductive material of the contacts. The techniques can be embodied, for instance, in planar or non-planar (e.g., double-gate and tri-gate FinFETs) transistor devices.

Abstract: A disposable gate structure straddling a semiconductor fin is formed. A source region and a drain region are formed employing the disposable gate structure as an implantation mask. A planarization dielectric layer is formed such that a top surface of the planarization dielectric layer is coplanar with the disposable gate structure. A gate cavity is formed by removing the disposable gate structure. An epitaxial cap layer is deposited on physically exposed semiconductor surfaces of the semiconductor fin by selective epitaxy. A gate dielectric layer is formed on the epitaxial cap layer, and a gate electrode can be formed by filling the gate cavity. The epitaxial cap layer can include a material that reduces the density of interfacial defects at an interface with the gate dielectric layer.

Abstract: Provided is a semiconductor integrated circuit device having flexible pin arrangement. A semiconductor integrated circuit is bonded to a die pad with an insulating paste, and the potential of the die pad is fixed through a bonding wire from an Al pad provided on the surface of the semiconductor integrated circuit. In the case of a P-type semiconductor substrate, the die pad is set as a terminal other than a terminal having a minimum operating potential of the semiconductor integrated circuit.

Abstract: An electrostatic discharge (ESD) protection circuit is disclosed. The circuit includes a first region having a first conductivity type (410) is formed at a face of a substrate. A gate having a second conductivity type (406) is formed in the substrate beside the first region. A channel having the first conductivity type is formed below the first region adjacent the gate. A second region having the first conductivity type (404) is formed at the face of the substrate beside the gate. A third region having the first conductivity type (430) is formed below the channel and has a greater impurity concentration than the channel.

Abstract: A semiconductor device and method of forming the semiconductor device are disclosed, where the semiconductor device includes additional implant regions in the source and drain areas of the device for improving Ron-sp and BVD characteristics of the device. The device includes a gate electrode formed over a channel region that separates first and second implant regions in the device substrate. The first implant region has a first conductivity type, and the second implant region has a second conductivity type. A source diffusion region is formed in the first implant region, and a drain diffusion region is formed in the second implant region.

Abstract: An electrostatic discharge (ESD) protection circuit is disclosed. The circuit includes a first region having a first conductivity type (410) is formed at a face of a substrate. A gate having a second conductivity type (406) is formed in the substrate beside the first region. A channel having the first conductivity type is formed below the first region adjacent the gate. A second region having the first conductivity type (404) is formed at the face of the substrate beside the gate. A third region having the first conductivity type (430) is formed below the channel and has a greater impurity concentration than the channel.

Abstract: An electronic component includes a high voltage switching transistor encased in a package. The high voltage switching transistor comprises a source electrode, a gate electrode, and a drain electrode all on a first side of the high voltage switching transistor. The source electrode is electrically connected to a conducting structural portion of the package. Assemblies using the abovementioned transistor with another transistor can be formed, where the source of one transistor can be electrically connected to a conducting structural portion of a package containing the transistor and a drain of the second transistor is electrically connected to the second conductive structural portion of a package that houses the second transistor. Alternatively, the source of the second transistor is electrically isolated from its conductive structural portion, and the drain of the second transistor is electrically isolated from its conductive structural portion.

Abstract: One illustrative method disclosed herein includes, among other things, forming a plurality of fin-formation trenches that define a fin, forming a first stressed layer within the trenches and above the fin and performing at least one etching process on the first stressed layer so as to define spaced-apart portions of the first stressed layer positioned at least partially within the trenches on opposite sides of the fin. The method also includes forming spaced-apart portions of a second stressed layer above the spaced-apart portions of the first layer, forming a third stressed layer above the fin between the spaced-apart portions of the second layer and, after forming the third layer, forming a conductive layer above the second and third layers.

Abstract: A junction gate field-effect transistor (JFET) includes a substrate, a source region formed in the substrate, a drain region formed in the substrate, a channel region formed in the substrate, and at least one gate region formed in the substrate. The channel region connects the source and drain regions. The at least one gate region is configured to cause a depletion region in one of the source and drain regions.

Abstract: Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.

Abstract: Transistors and methods of fabricating are described herein. These transistors include a field plate (108) and a charged dielectric layer (106) overlapping at least a portion of a gate electrode (102). The field plate (108) and charged dielectric layer (106) provide the ability to modulate the electric field or capacitance in the transistor. For example, the charged dielectric layer (106) provides the ability to control the capacitance between the gate electrode (102) and field plate (108). Modulating such capacitances or the electric field in transistors can facilitate improved performance. For example, controlling gate electrode (102) to field plate (108) capacitance can be used to improve device linearity and/or breakdown voltage. Such control over gate electrode (102) to field plate (108) capacitance or electric fields provides for high speed and/or high voltage transistor operation.

Abstract: A semiconductor device includes a first island and a first electrode. The first island includes a first semiconductor region, a first insulation region, and a first insulating film. The first semiconductor region has first and second side surfaces adjacent to the first insulation region and the first insulating film, respectively. The first electrode is adjacent to the first insulation region and the first insulating film. The first insulating film is between the first electrode and the first semiconductor region.

Abstract: The present invention relates to fabrication of enhancement mode and depletion mode High Electron Mobility Field Effect Transistors on the same die separated by as little as 10 nm. The fabrication method uses selective decomposition and selective regrowth of the Barrier layer and the Cap layer to engineer the bandgap of a region on a die to form an enhancement mode region. In these regions zero or more devices may be fabricated.

Abstract: A semiconductor device of an embodiment includes: a semiconductor substrate; a field-effect transistor formed on the semiconductor substrate; and a diode forming area which is adjacent to a forming area of the field-effect transistor, wherein the diode forming area is insulated from the forming area of the transistor on the semiconductor substrate, and includes a first diode electrode in which a gate electrode of the field-effect transistor is placed in Schottky barrier junction and/or ohmic contact with the semiconductor substrate through a bus wiring or a pad; and a second diode electrode in which a source electrode of the field-effect transistor is placed in ohmic contact and/or Schottky barrier junction with the semiconductor substrate through a bus interconnection or a pad to form a diode between the gate electrode and the source electrode.

Abstract: The disclosure relates generally to junction gate field effect transistor (JFET) structures and methods of forming the same. The JFET structure includes a p-type substrate having a p-region therein; an n-channel thereunder; and n-doped enhancement regions within the n-channel, each n-doped enhancement region separated from the p-region.

Abstract: The semiconductor device includes: a columnar silicon layer on the planar silicon layer; a first n+ type silicon layer formed in a bottom area of the columnar silicon layer; a second n+ type silicon layer formed in an upper region of the columnar silicon layer; a gate insulating film formed in a perimeter of a channel region between the first and second n+ type silicon layers; a gate electrode formed in a perimeter of the gate insulating film, and having a first metal-silicon compound layer; an insulating film formed between the gate electrode and the planar silicon layer, an insulating film sidewall formed in an upper sidewall of the columnar silicon layer; a second metal-silicon compound layer formed in the planar silicon layer; and an electric contact formed on the second n+ type silicon layer.

Abstract: An electronic component includes a high voltage switching transistor encased in a package. The high voltage switching transistor comprises a source electrode, a gate electrode, and a drain electrode all on a first side of the high voltage switching transistor. The source electrode is electrically connected to a conducting structural portion of the package. Assemblies using the abovementioned transistor with another transistor can be formed, where the source of one transistor can be electrically connected to a conducting structural portion of a package containing the transistor and a drain of the second transistor is electrically connected to the second conductive structural portion of a package that houses the second transistor. Alternatively, the source of the second transistor is electrically isolated from its conductive structural portion, and the drain of the second transistor is electrically isolated from its conductive structural portion.

Abstract: An electronic component includes a high voltage switching transistor encased in a package. The high voltage switching transistor comprises a source electrode, a gate electrode, and a drain electrode all on a first side of the high voltage switching transistor. The source electrode is electrically connected to a conducting structural portion of the package. Assemblies using the abovementioned transistor with another transistor can be formed, where the source of one transistor can be electrically connected to a conducting structural portion of a package containing the transistor and a drain of the second transistor is electrically connected to the second conductive structural portion of a package that houses the second transistor. Alternatively, the source of the second transistor is electrically isolated from its conductive structural portion, and the drain of the second transistor is electrically isolated from its conductive structural portion.

Abstract: A trench Metal Oxide Semiconductor Field Effect Transistor with improved body region structures is disclosed. By forming the inventive body region structures with concave-arc shape with respect to epitaxial layer, a wider interfaced area between the body region and the epitaxial layer is achieved, thus increasing capacitance between drain and source Cds. Moreover, the invention further comprises a Cds enhancement doped region interfaced with said body region having higher doping concentration than the epitaxial layer to further enhancing Cds without significantly impact breakdown voltage.

Abstract: An object is to apply a transistor using an oxide semiconductor to a logic circuit including an enhancement transistor. The logic circuit includes a depletion transistor 101 and an enhancement transistor 102. The transistors 101 and 102 each include a gate electrode, a gate insulating layer, a first oxide semiconductor layer, a second oxide semiconductor layer, a source electrode, and a drain electrode. The transistor 102 includes a reduction prevention layer provided over a region in the first oxide semiconductor layer between the source electrode and the drain electrode.

Abstract: A vertical pillar semiconductor device may include a substrate, a group of channel patterns, a gate insulation layer pattern and a gate electrode. The substrate may be divided into an active region and an isolation layer. A first impurity region may be formed in the substrate corresponding to the active region. The group of channel patterns may protrude from a surface of the active region and may be arranged parallel to each other. A second impurity region may be formed on an upper portion of the group of channel patterns. The gate insulation layer pattern may be formed on the substrate and a sidewall of the group of channel patterns. The gate insulation layer pattern may be spaced apart from an upper face of the group of channel patterns. The gate electrode may contact the gate insulation layer and may enclose a sidewall of the group of channel patterns.

Abstract: The disclosure relates generally to junction gate field effect transistor (JFET) structures and methods of forming the same. The JFET structure includes a p-type substrate having a p-region therein; an n-channel thereunder; and n-doped enhancement regions within the n-channel, each n-doped enhancement region separated from the p-region.

Abstract: A semiconductor device includes a first conductive type semiconductor substrate; a first conductive type semiconductor region provided thereon in which first conductive type first pillar regions and second conductive type second pillar regions alternately arranged; second conductive type second semiconductor regions provided on second pillar regions in an element region to be in contact with first pillar regions therein; gate electrodes each provided on adjacent second semiconductor regions and on one of the first pillar region interposed therebetween; third semiconductor regions functioning as a first conductive type source region provided in parts of the second semiconductor regions located under side portions of the gate electrodes; and a second conductive type resurf region which is a part of a terminal region surrounding the element region and which is provided on first pillar regions and second pillar regions in the part of the terminal regions.

Abstract: A semiconductor device in which the self-turn-on phenomenon is prevented that can significantly improve power conversion efficiency. The semiconductor device is a system-in-package for power supply applications in which a high-side switch, a low-side switch, and two drivers are included in a single package. The device includes an auxiliary switch disposed between the gate and source of said low-side switch, and a low-side MOSFET 3 for the low-side switch and an auxiliary MOSFET 4 for the auxiliary switch are disposed on the same chip. In this way, the self-turn-on phenomenon can be prevented, allowing the mounting of a low-side MOSFET 3 with a low threshold voltage and thereby significantly improving power conversion efficiency. The gate of the auxiliary MOSFET 4 is driven by the driver for the high-side MOSFET 2, thereby eliminating the need for a new drive circuit and realizing the same pin configuration as existing products, which facilitates easy replacement.

Abstract: Circuits, methods, and systems are disclosed in which a current is provided to compensate for spurious current while receiving signals through a line. For example, the spurious current can be sensed and the compensating current can be approximately equal to the sensed spurious current. The spurious current could include photocurrent from a bright light, and the compensating current can prevent bright light effects.

Abstract: An electronic component includes a high voltage switching transistor encased in a package. The high voltage switching transistor comprises a source electrode, a gate electrode, and a drain electrode all on a first side of the high voltage switching transistor. The source electrode is electrically connected to a conducting structural portion of the package. Assemblies using the abovementioned transistor with another transistor can be formed, where the source of one transistor can be electrically connected to a conducting structural portion of a package containing the transistor and a drain of the second transistor is electrically connected to the second conductive structural portion of a package that houses the second transistor. Alternatively, the source of the second transistor is electrically isolated from its conductive structural portion, and the drain of the second transistor is electrically isolated from its conductive structural portion.

Abstract: An integrated circuit includes a first electrode, a second electrode, and a damascene structured memory element coupled to the first electrode and the second electrode. The memory element has a height and a width. The height is greater than or equal to the width. The memory element includes resistance changing material doped with dielectric material.

Abstract: A display substrate includes a base substrate, a first metal pattern, a second metal pattern, a first transparent conductive layer and a second transparent conductive layer. The first metal pattern is formed on the base substrate, and includes a gate line and a gate electrode connected to the gate line. The second metal pattern includes a data line crossing the gate line, a source electrode connected to the data line and a drain electrode being spaced apart from the source electrode. The first transparent conductive layer includes a capping layer capping the second metal pattern and a common electrode formed in a pixel area. The second transparent conductive layer includes a pixel electrode having a plurality of openings, contacting the capping layer capping the drain electrode, and facing the common electrode.

Abstract: A semiconductor device features a semiconductor substrate with a MOSFET, an electrode for main current of the MOSFET disposed on a first major surface of the substrate, an electrode for control of the MOSFET disposed on the first major surface, a rear plane electrode of the MOSFET disposed on a second, opposing surface of the substrate, and an external connection terminal electrically connected to the rear plane electrode, the external electrode contains a first part, a second part and a third part, the first part is positioned over the rear plane electrode, the third part is positioned below the second major surface and the third part is connected via the second part to the first part.

Abstract: An object is to apply a transistor using an oxide semiconductor to a logic circuit including an enhancement transistor. The logic circuit includes a depletion transistor 101 and an enhancement transistor 102. The transistors 101 and 102 each include a gate electrode, a gate insulating layer, a first oxide semiconductor layer, a second oxide semiconductor layer, a source electrode, and a drain electrode. The transistor 102 includes a reduction prevention layer provided over a region in the first oxide semiconductor layer between the source electrode and the drain electrode.

Abstract: III-nitride devices are described with recessed gates. In some embodiments, the material around the gates is formed by epitaxially depositing different III-nitride layers on a substrate and etching through at least the top two layers in the gate region. Because adjacent layers in the top three layers of the structure have different compositions, some of the layers act as etch stops to allow for precision etching. In some embodiments, a regrowth mask is used to prevent growth of material in the gate region. A gate electrode is deposited in the recess.

Abstract: A cascoded junction field transistor (JFET) device comprises a first stage high voltage JFET cascoded to a second stage low voltage JFET wherein one of the first and second stages JFET is connected to a drain electrode of another JFET stage.

Abstract: This invention describes a method of building complementary logic circuits using junction field effect transistors in silicon. This invention is ideally suited for deep submicron dimensions, preferably below 65 nm. The basis of this invention is a complementary Junction Field Effect Transistor which is operated in the enhancement mode. The speed-power performance of the JFETs becomes comparable with the CMOS devices at sub-70 nanometer dimensions. However, the maximum power supply voltage for the JFETs is still limited to below the built-in potential (a diode drop). To satisfy certain applications which require interface to an external circuit driven to higher voltage levels, this invention includes the structures and methods to build CMOS devices on the same substrate as the JFET devices.

Abstract: At least one source/drain zone (140, 142, 160, or 162) of an enhancement-mode insulated-gate field-effect transistor (120 or 122) is provided with graded junction characteristics to reduce junction capacitance, thereby increasing switching speed. Each graded junction source/drain zone contains a main portion (140M, 142M, 160M, or 162M) and a more lightly doped lower portion (140L, 142L, 160L, or 162L) underlying, and vertically continuous with, the main portion. The magnitudes of the threshold voltages of a group of such transistors fabricated under the same post-layout fabrication process conditions so as to be of different channel lengths reach a maximum absolute value VTAM when the channel length is at a value LC, are at least 0.03 volt less than VTAM when the channel length is approximately 0.3 ?m greater than LC, and materially decrease with increasing channel length when the channel length is approximately 1.0 ?m greater than LC.

Abstract: A III-N device is described has a buffer layer, a first III-N material layer on the buffer layer, a second III-N material layer on the first III-N material layer on an opposite side from the buffer layer and a dispersion blocking layer between the buffer layer and the channel layer. The first III-N material layer is a channel layer and a compositional difference between the first III-N material layer and the second III-N material layer induces a 2DEG channel in the first III-N material layer. A sheet or a distribution of negative charge at an interface of the channel layer and the dispersion blocking layer confines electrons away from the buffer layer.

Abstract: III-nitride devices are described with recessed gates. In some embodiments, the material around the gates is formed by epitaxially depositing different III-nitride layers on a substrate and etching through at least the top two layers in the gate region. Because adjacent layers in the top three layers of the structure have different compositions, some of the layers act as etch stops to allow for precision etching. In some embodiments, a regrowth mask is used to prevent growth of material in the gate region. A gate electrode is deposited in the recess.

Abstract: This invention describes a method of building complementary logic circuits using junction field effect transistors in silicon. This invention is ideally suited for deep submicron dimensions, preferably below 65 nm. The basis of this invention is a complementary Junction Field Effect Transistor which is operated in the enhancement mode. The speed-power performance of the JFETs becomes comparable with the CMOS devices at sub-70 nanometer dimensions. However, the maximum power supply voltage for the JFETs is still limited to below the built-in potential (a diode drop). To satisfy certain applications which require interface to an external circuit driven to higher voltage levels, this invention includes the structures and methods to build CMOS devices on the same substrate as the JFET devices.

Abstract: Methods and apparatus are provided for RF switches (100, 200). In a preferred embodiment, the apparatus comprises one or more multi-gate n-channel enhancement mode FET transistors (50, 112, 114). When used in pairs (112, 114) each has its source (74, 133) coupled to a first common RF I/O port (116) and drains coupled respectively to second and third RF I/O ports (118, 120), and gates (136, 138), coupled respectively to first and second control terminals (122, 124). The multi-gate regions (66, 68) of the FETs (50) are parallel coupled, spaced-apart and serially arranged between source (72) and drain (76). Lightly doped n-regions (Ldd, Lds) are provided serially arranged between the spaced-apart multi-gate regions (66, 68), the lightly doped n-regions (Ldd, Lds) being separated by more heavily doped n-regions (84).

Abstract: A liquid crystal display (LCD) panel is fabricated in a simplified process. The LCD panel includes a thin film transistor (TFT) array substrate with a gate and data lines crossing each other to define a pixel area, a TFT at the crossings of the gate and data lines, a protective film, and a pixel electrode connected to the TFT and formed within a pixel opening that is arranged at the pixel area and formed through the protective film and a gate insulating film. A color filter array substrate is joined to the TFT array substrate. A pattern spacer is between the TFT and color filter array substrate and overlaps at least one of the gate line, the data line, and the thin film transistor. A rib is formed from the same layer as the pattern spacer and overlaps the pixel electrode. Liquid crystal material is provided within the LCD panel.

Abstract: Junction field effect transistors (JFET) formed in substrates containing germanium. JFETs having polycrystalline semiconductor surface contacts with self-aligned silicide formed thereon and self-aligned source, drain and gate regions formed by thermal drive-in of impurities from surface contacts into the substrate, and implanted link regions. Others have a polycrystalline semiconductor gate surface contact and metal back gate, source and drain contacts and a metal surface contact to the gate surface contact with implanted source and drains and a self-aligned gate region. JFETs having a polycrystalline semiconductor gate surface contact and metal back gate, source and drain contacts and a metal surface contact to the gate surface contact with implanted source and drains and a self-aligned gate region and silicide formed on the top of the source, drain and back gate contacts and on top of the gate polycrystalline semiconductor gate contact to which the metal surface contacts make electrical contact.

Abstract: A high-breakdown-voltage semiconductor device comprises a high-resistance semiconductor layer, trenches formed on the surface thereof in a longitudinal plane shape and in parallel, first regions formed on the semiconductor layer to be sandwiched between adjacent ones of the trenches and having an impurity concentration higher than that of the semiconductor layer, a second region having opposite conductivity to the first regions and continuously disposed in a trench sidewall and bottom portion, a sidewall insulating film disposed on the second region of the trench sidewall, a third region disposed on the second region of the trench bottom portion and having the same conductivity as and the higher impurity concentration than the second region, a fourth region disposed on the back surface of the semiconductor layer, a first electrode formed on each first region, a second electrode connected to the third region, and a third electrode formed on the fourth region.

Abstract: A method of forming multi-wall tube from a single-wall piece of tube. The multi-wall tube is formed by relative motion between a die shoe and the single-wall tube to deform the material.

Abstract: A rectifier MESFET includes an N-channel MESFET having its gate connected to its source, and at the same current density having a voltage drop lower than the gate Schottky diode. A Schottky diode may be connected in parallel with the N-channel device to provide over current protection. A Zener may also be connected in parallel to provide reverse voltage protection. A second N-channel device may be connected in parallel. The addition of the second N-channel provides two different operational mode: synchronous rectification where the majority of current flows through the low resistance first N-channel device and asynchronous rectification where the majority of current flows through the somewhat higher resistance first N-channel device.