Abstract: A piezoelectric device includes an integrated circuit (IC) chip and a piezoelectric resonator element, a part of the piezoelectric resonator element being disposed so as to overlap with a part of the IC chip when viewed in plan. The IC chip includes: an inner pad disposed on an active face and in an area where is overlapped with the piezoelectric resonator when viewed in plan; an insulating layer formed on the active face; a relocation pad disposed on the insulating layer and in an area other than a part where is overlapped with the piezoelectric resonator element, the relocation pad being coupled to an end part of a first wire; and a second wire electrically coupling the inner pad and the relocation pad, the second wire having a relocation wire and a connector that penetrates the insulating layer, the relocation wire being disposed between the insulating layer and the active face.

Abstract: A vibration sensor includes a substrate. A first electrical contact and a spaced apart second electrical contact are both disposed on a first surface of the substrate. The elongated piezoelectric nano-scale structure extends outwardly from the first surface of the substrate and is disposed between, and in electrical communication with, the first electrical contact and the second electrical contact. The elongated piezoelectric nano-scale structure is oriented so that a voltage potential exists between the first electrical contact and the second electrical contact when the elongated piezoelectric nano-scale structure is bent from a first state to a second state.

Abstract: An electromechanical transducer of the present invention includes a first electrode, a vibrating membrane formed above the first electrode through a gap, a second electrode formed on the vibrating membrane, and an insulating protective layer formed on a surface of the second electrode side. A region where the protective layer is not formed is present on at least part of a surface of the vibrating membrane.

Abstract: An apparatus has a packaged microphone with a base and a lid that at least in part form an interior chamber containing a microphone die. The base has a bottom surface with an electrical interface and a base aperture. The apparatus also has a device housing having an internal surface, and a filter extending between the internal surface of the device housing, through an underlying substrate, and the bottom surface of the base.

Abstract: An ultrasonic transducer includes a first electrode, a first insulation film covering the first electrode, a hollow part overlapping the first electrode on the first insulation film, a second insulation film covering the hollow part, a second electrode overlapping the hollow part on the second insulation film, and an interconnection joined to the second electrode. An edge of the first electrode is formed so as to moderate a step of the first electrode.

Abstract: An element array comprises a plurality of elements having a first electrode and a second electrode with a gap therebetween; the first electrode is separated for each of the elements by grooves, an insulating connection substrate is bonded to the first electrode, and wirings are provided from the respective first electrodes through the connection substrate to the side opposite to the first electrodes.

Abstract: In one embodiment, a sensor device includes a bulk silicon layer, a first doped region of the bulk silicon layer of a first dopant type, a second doped region of the bulk silicon layer of a second dopant type, wherein the first dopant type is a type of dopant different from the second dopant type, the second doped region located at an upper surface of the bulk silicon layer and having a first doped portion bounded by the first doped region, a first cavity portion directly above the second doped region, and an upper electrode formed in an epitaxial layer, the upper electrode directly above the first cavity portion.

Abstract: A device includes a semiconductor substrate, and a capacitive sensor having a back-plate, wherein the back-plate forms a first capacitor plate of the capacitive sensor. The back-plate is a portion of the semiconductor substrate. A conductive membrane is spaced apart from the semiconductor substrate by an air-gap. A capacitance of the capacitive sensor is configured to change in response to a movement of the polysilicon membrane.

Abstract: The present invention provides a MEMS structure comprising confined sacrificial oxide layer and a bonded Si layer. Polysilicon stack is used to fill aligned oxide openings and MEMS vias on the sacrificial layer and the bonded Si layer respectively. To increase the design flexibility, some conductive polysilicon layer can be further deployed underneath the bonded Si layer to form the functional sensing electrodes or wiring interconnects. The MEMS structure can be further bonded to a metallic layer on top of the Si layer and the polysilicon stack.

Abstract: A capacitive sensor is configured for collapsed mode, e.g. for measuring sound or pressure, wherein the moveable element is partitioned into smaller sections. The capacitive sensor provides increased signal to noise ratio.

Abstract: An improved method for manufacturing an MEMS microphone with a double fixed electrode is specified which results in a microphone which likewise has improved properties.

Abstract: An ultrasonic transducer and a method of manufacturing the same are disclosed. The ultrasonic transducer includes a conductive substrate, a projection which is disposed on the conductive substrate and which forms a cavity therein, a via hole which penetrates the projection and conductive substrate, a first electrode which includes a metal and which fills the via hole, a second electrode which is provided on a bottom of the conductive substrate, a membrane which is provided on the projection and which covers the cavity, and an upper electrode which is provided on the membrane and which contacts the first electrode.

Abstract: A device includes a Micro-Electro-Mechanical System (MEMS) wafer having a MEMS device therein. The MEMS device includes a movable element, and first openings in the MEMS wafer. The movable element is disposed in the first openings. A carrier wafer is bonded to the MEMS wafer. The carrier wafer includes a second opening connected to the first openings, wherein the second opening includes an entry portion extending from a surface of the carrier wafer into the carrier wafer, and an inner portion wider than the entry portion, wherein the inner portion is deeper in the carrier wafer than the entry portion.

Abstract: MEMS sensor including substrate, lower thin film confronting one face of the substrate with a space therebetween and having lower through holes extending in the thickness direction thereof, and upper thin film arranged on the opposite side of the substrate confronting the lower thin film with a space therebetween and having upper through holes extending in the thickness direction. A MEMS sensor manufacturing method includes forming a first sacrificing layer on one face of a substrate, forming a lower thin film on the first sacrificing layer with lower through holes individually extending in the thickness direction, forming a second sacrificing layer on the lower thin film, forming an upper thin film on the second sacrificing layer with upper through holes individually extending in the thickness direction, removing the second sacrificing layer through the upper through holes by etching, and removing the first sacrificing layer through the upper and lower through holes by etching.

Abstract: A method and system to map density and temperature of a chip, in situ, is disclosed. The method includes measuring a propagation time that a mechanical propagation wave travels along at least one predefined path in a substrate. The method further includes calculating an average substrate density and temperature along the at least one predefined path as a function of the propagation time and distance. The method further includes determining a defect or unauthorized modification in the substrate based on the average substrate density being different than a baseline substrate density.

Abstract: A packaging concept for MEMS components having at least one diaphragm structure formed in the front side of the component is provided, according to which the MEMS component is mounted on a support which at least laterally delimits a cavity adjoining the diaphragm structure. In addition, at least one electrical feedthrough is formed in the support which allows electrical contacting of the MEMS component through the support. To achieve the largest possible rear volume for the diaphragm structure of the MEMS component for a given chip surface area, and also to simplify the processing of the support, according to the invention the electrical feedthroughs are integrated into the wall of the cavity adjoining the diaphragm structure, in that at least one section of such a feedthrough is implemented in the form of an electrically conductive coating of a side wall section of the cavity.

Abstract: A MEMS coupler and a method to form a MEMS structure having such a coupler are described. In an embodiment, a MEMS structure comprises a member and a substrate. A coupler extends through a portion of the member and connects the member with the substrate. The member is comprised of a first material and the coupler is comprised of a second material. In one embodiment, the first and second materials are substantially the same. In one embodiment, the second material is conductive and is different than the first material. In another embodiment, a method for fabricating a MEMS structure comprises first forming a member above a substrate. A coupler comprised of a conductive material is then formed to connect the member with the substrate.

Abstract: A three-dimensional printing technique can be used to form a microphone package. The microphone package can include a housing having a first side and a second side opposite the first side. A first electrical lead can be formed on an outer surface on the first side of the housing. A second electrical lead can be formed on an outer surface on the second side of the housing. The first electrical lead and the second electrical lead may be electrically shorted to one another. Further, vertical and horizontal conductors can be monolithically integrated within the housing.

Abstract: A mechanical memory transistor includes a substrate having formed thereon a source region and a drain region. An oxide is formed upon a portion of the source region and upon a portion of the drain region. A pull up electrode is positioned above the substrate such that a gap is formed between the pull up electrode and the substrate. A movable gate has a first position and a second position. The movable gate is located in the gap between the pull up electrode and the substrate. The movable gate is in contact with the pull up electrode when the movable gate is in a first position and is in contact with the oxide to form a gate region when the movable gate is in the second position. The movable gate, in conjunction with the source region and the drain region and when the movable gate is in the second position, form a transistor that can be utilized as a non-volatile memory element.

Abstract: A microphone system has a package forming an interior chamber, and a MEMS microphone secured within the interior chamber. The package forms an aperture for permitting acoustic access to the interior of the chamber and thus, the MEMS microphone. The system also has two dies; namely, the system has a primary circuit die within the interior chamber, and an integrated passive device die electrically connected with the primary circuit die. The primary circuit die is electrically connected with the MEMS microphone and has at least one active circuit element.

Abstract: A surface acoustic wave (SAW) device package and method for packaging a SAW device provide a surface excited device having a small footprint, low cost and fabricated according to a unique manufacturing process. A substrate including a SAW active area on a first side is bonded to another similar sized substrate with a space sufficient to allow the propagation of the SAW on a top surface of the substrate. The two substrates have similar thermal expansion coefficients such that stress from the sealing process is minimized. The two substrates are sealed using either a low melting point glass or an organic compound such that conductive pathways exist through the seal allowing the internal device to access an external electrical connection.

Abstract: When forming a trench of a narrow width in a thick semiconductor layer, a trench can be formed without the occurrence of semiconductor residue. In this Specification, a semiconductor device in which a trench is formed in a semiconductor layer is disclosed. In the semiconductor layer of the semiconductor device, a compensation pattern which compensates for sudden changes in the width of the trench is formed at a place at which the width of the trench changes suddenly. In the semiconductor layer of the above-described semiconductor device, since a compensation pattern is formed at a place at which the trench width changes suddenly, in the case where forming the trench using a deep RIE method, the occurrence of steep inclined portions arising from semiconductor residue can be prevented. Consequently, when forming a trench of a narrow width in a thick semiconductor layer, the occurrence of semiconductor residue can be prevented.

Abstract: A method of fabricating a micro-electrical-mechanical system (MEMS) transducer comprises the steps of forming a membrane on a substrate, and forming a back-volume in the substrate. The step of forming a back-volume in the substrate comprises the steps of forming a first back-volume portion and a second back-volume portion, the first back-volume portion being separated from the second back-volume portion by a step in a sidewall of the back-volume. The cross-sectional area of the second back-volume portion can be made greater than the cross-sectional area of the membrane, thereby enabling the back-volume to be increased without being constrained by the cross-sectional area of the membrane. The back-volume may comprise a third back-volume portion. The third back-volume portion enables the effective diameter of the membrane to be formed more accurately.

Abstract: A simple and cost-effective form of implementing a semiconductor component having a micromechanical microphone structure, including an acoustically active diaphragm as a deflectable electrode of a microphone capacitor, a stationary, acoustically permeable counterelement as a counter electrode of the microphone capacitor, and means for applying a charging voltage between the deflectable electrode and the counter electrode of the microphone capacitor. In order to not impair the functionality of this semiconductor component, even during overload situations in which contact occurs between the diaphragm and the counter electrode, the deflectable electrode and the counter electrode of the microphone capacitor are counter-doped, at least in places, so that they form a diode in the event of contact. In addition, the polarity of the charging voltage between the deflectable electrode and the counter electrode is such that the diode is switched in the blocking direction.

Abstract: In a method for manufacturing a micromechanical component, a cavity is produced in the substrate from an opening at the rear of a monocrystalline semiconductor substrate. The etching process used for this purpose and the monocrystalline semiconductor substrate used are controlled in such a way that a largely rectangular cavity is formed.

Abstract: A MEMS device is disclosed. The MEMS device comprises a first plate with a first surface and a second surface; and an anchor attached to a first substrate. The MEMS device further includes a second plate with a third surface and a fourth surface attached to the first plate. A linkage connects the anchor to the first plate, wherein the first plate and second plate are displaced in the presence of an acoustic pressure differential between the first and second surfaces of the first plate. The first plate, second plate, linkage, and anchor are all contained in an enclosure formed by the first substrate and a second substrate, wherein one of the first and second substrates contains a through opening to expose the first surface of the first plate to the environment.

Abstract: A MEMS microphone system suited for harsh environments. The system uses an integrated circuit package. A first, solid metal lid covers one face of a ceramic package base that includes a cavity, forming an acoustic chamber. The base includes an aperture through the opposing face of the base for receiving audio signals into the chamber. A MEMS microphone is attached within the chamber about the aperture. A filter covers the aperture opening in the opposing face of the base to prevent contaminants from entering the acoustic chamber. A second metal lid encloses the opposing face of the base and may attach the filter to this face of the base. The lids are electrically connected with vias forming a radio frequency interference shield. The ceramic base material is thermally matched to the silicon microphone material to allow operation over an extended temperature range.

Abstract: Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS processes, methods of manufacture and design structures are disclosed. The method includes forming at least one beam comprising amorphous silicon material and providing an insulator material over and adjacent to the amorphous silicon beam. The method further includes forming a via through the insulator material and exposing a material underlying the amorphous silicon beam. The method further includes providing a sacrificial material in the via and over the amorphous silicon beam. The method further includes providing a lid on the sacrificial material and over the insulator material. The method further includes venting, through the lid, the sacrificial material and the underlying material to form an upper cavity above the amorphous silicon beam and a lower cavity below the amorphous silicon beam, respectively.

Abstract: A sensor module and semiconductor chip. One embodiment provides a carrier. A semiconductor chip includes a first recess and a second recess and a main surface of the semiconductor chip. The semiconductor chip is mounted to the carrier such that the first recess forms a first cavity with the carrier and the second recess forms a second cavity with the carrier. The first cavity is in fluid connection with the second cavity.

Abstract: An apparatus and method for sensor architecture based on bulk machining of silicon wafers and fusion bond joining which provides a nearly all-silicon, hermetically sealed, microelectromechanical system (MEMS) device. An example device includes a device sensor mechanism formed in an active semiconductor layer and separated from a handle layer by a dielectric layer, and a silicon cover plate having a handle layer with a dielectric layer being bonded to portions of the active layer. Pit are included in one of the handle layers and corresponding dielectric layers to access electrical leads on the active layer. Another example includes set backs from the active components formed by anisotropically etching the handle layer while the active layer has been protectively doped.

Abstract: Mechanical resonating structures, as well as related devices and methods of manufacture. The mechanical resonating structures can be microphones, each including a diaphragm and a piezoelectric stack. The diaphragm can have one or more openings formed therethrough to enable the determination of an acoustic pressure being applied to the diaphragm through signals emitted by the piezoelectric stack.

Abstract: Provided is a structure for improving performance of a micro electro mechanical system (MEMS) microphone by preventing deformation from occurring due to a residual stress and a package stress of a membrane and by decreasing membrane rigidity. A MEMS microphone according to the present disclosure includes a backplate formed on a substrate, an insulating layer formed on the substrate to surround the backplate; a membrane formed to be separate from above the backplate by a predetermined interval; a membrane supporting portion configured to connect the membrane to the substrate; and a buffering portion formed in a double spring structure between the membrane and the membrane supporting portion.

Abstract: A MEMS device includes a silicon substrate and a structural dielectric layer. The silicon substrate has a cavity. The structural dielectric layer is disposed on the silicon substrate. The structural dielectric layer has a space above the cavity of the silicon substrate and holds a plurality of structure elements within the space, including: a conductive backplate, over the silicon substrate, having a plurality of venting holes and a plurality of protrusion structures on top of the conductive backplate; and a diaphragm, located above the conductive backplate by a distance, wherein a chamber is formed between the diaphragm and the conductive backplate, and is connected to the cavity of the silicon substrate through the venting holes. A first side of the diaphragm is exposed by the chamber and faces to the protrusion structures of the conductive backplate and a second side of the diaphragm is exposed to an environment space.

Abstract: A lateral bipolar junction transistor includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; and a collector region surrounding the base region; wherein the portion of the base region under the gate does not under go a threshold voltage implant process.

Abstract: Provided are a micro electro mechanical system (MEMS) acoustic sensor for removing a nonlinear component that occurs due to a vertical motion of a lower electrode when external sound pressure is received by fixing the lower electrode to a substrate using a fixing pin, and a fabrication method thereof. The MEMS acoustic sensor removes an undesired vertical motion of a fixed electrode when sound pressure is received by forming a fixing groove on a portion of the substrate and then forming a fixing pin on the fixing groove, and fixing the fixed electrode to the substrate using the fixing pin, and thereby improves a frequency response characteristic and also improves a yield of a process by inhibiting thermal deformation of the fixed electrode that may occur during the process.

Abstract: An ultrasonic transducer and a method of manufacturing the same are disclosed. The ultrasonic transducer includes a first electrode layer which is disposed to cover a conductive substrate and an inner wall and a top of a via hole penetrating a membrane and has a top surface at a same height as a top surface of the membrane; a second electrode layer which is disposed on a bottom surface of the conductive substrate to be spaced apart from the first electrode layer; and a top electrode which is disposed on the top surface of the membrane and which contacts the top surface of the first electrode layer.

Abstract: Methods and devices for embedding semiconductors in printed circuit boards (PCBs) are provided. In one example, a method of manufacturing a PCB having a die assembly embedded therein includes removing a release film from an adhesive layer of the die assembly. The method also includes disposing the die assembly on a first layer of the PCB such that the adhesive layer contacts the first layer of the PCB. The method includes disposing a second layer of the PCB over the first layer such that the die assembly is within an intermediate portion between the first layer and the second layer. The method also includes filling the intermediate portion with resin and subjecting the PCB to a press cycle to cure the resin.

Abstract: An improved method for manufacturing an MEMS microphone with a double fixed electrode is specified which results in a microphone which likewise has improved properties.

Abstract: A DRAM memory structure at least includes a strip semiconductive material disposed on a substrate and extending along a first direction, a split gate disposed on the substrate and extending along a second direction, a dielectric layer at least sandwiched between the split gate and the substrate, a gate dielectric layer at least sandwiched between the split gate and the strip semiconductive material, and a capacitor unit. The split gate independently includes a first block and a second block to divide the strip semiconductive material into a source terminal, a drain terminal and a channel. The capacitor unit is electrically connected to the source terminal.

Abstract: A system and a method for forming a packaged MEMS device are disclosed. In one embodiment a packaged MEMS device includes a MEMS device having a first main surface with a first area along a first direction and a second direction, a membrane disposed on the first main surface of the MEMS device and a backplate adjacent to the membrane. The packaged MEMS device further includes an encapsulation material that encapsulates the MEMS device and that defines a back volume, the back volume having a second area along the first direction and the second direction, wherein the first area is smaller than the second area.

Abstract: According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.

Abstract: In one embodiment, a semiconductor device includes a plurality of semiconductor chip stacks mounted on a substrate. Bonding terminals disposed on the substrate correspond to the chip stacks, such that at least one chip in each chip stack may be directly connected to a bonding terminal on the substrate and at least one chip in the chip stack is not directly connected to the bonding terminal. The semiconductor chip stacks may each act as one semiconductor device to the outside.

Abstract: The present invention discloses an MEMS sensor and a method for making the MEMS sensor. The MEMS sensor according to the present invention includes: a substrate including an opening; a suspended structure located above the opening; and an upper structure, a portion of which is at least partially separated from a portion of the suspended structure; wherein the suspended structure and the upper structure are separated from each other by a step including metal etch.

Abstract: A micro-electrical-mechanical device comprises: a transducer arrangement having at least a membrane being mounted with respect to a substrate; and electrical interface means for relating electrical signals to movement of the membrane; in which the transducer arrangement comprises stress alleviating formations which at least partially decouple the membrane from expansion or contraction of the substrate.

Abstract: A structure and a process for a microelectromechanical system (MEMS)-based sensor are provided. The structure for a MEMS-based sensor includes a substrate chip. A first insulating layer covers a top surface of the substrate chip. A device layer is disposed on a top surface of the first insulating layer. The device layer includes a periphery region and a sensor component region. The periphery region and a sensor component region have an air trench therebetween. The component region includes an anchor component and a moveable component. A second insulating layer is disposed on a top surface of the device layer, bridging the periphery region and a portion of the anchor component. A conductive pattern is disposed on the second insulating layer, electrically connecting to the anchor component.

Abstract: Packages and methods for 3D integration are disclosed. In various embodiments, a first integrated device die having a hole is attached to a package substrate. A second integrated device die can be stacked on top of the first integrated device die. At least a portion of the second integrated device die can extend into the hole of the first integrated device die. By stacking the two dies such that the portion of the second integrated device die extends into the hole, the overall package height can advantageously be reduced.

Abstract: A component having a robust, but acoustically sensitive microphone structure is provided and a simple and cost-effective method for its production. This microphone structure includes an acoustically active diaphragm, which functions as deflectable electrode of a microphone capacitor, a stationary, acoustically permeable counter element, which functions as counter electrode of the microphone capacitor, and an arrangement for detecting and analyzing the capacitance changes of the microphone capacitor. The diaphragm is realized in a diaphragm layer above the semiconductor substrate of the component and covers a sound opening in the substrate rear. The counter element is developed in a further layer above the diaphragm. This further layer generally extends across the entire component surface and compensates level differences, so that the entire component surface is largely planar according to this additional layer.

Abstract: A method of forming a device is provided. A substrate having a component is provided and a sacrificial layer is formed over the component. The sacrificial layer includes a cavity portion disposed about the component and a tunnel portion adjacent to the cavity portion. In addition, an encapsulation layer having a cover portion and a perimeter portion is formed over the sacrificial layer. The cover portion encapsulates the cavity portion such that the cavity portion forms a cavity within the cover portion. The perimeter portion is disposed over the tunnel portion. Moreover, an access hole is formed in the perimeter portion of the encapsulation layer.

Abstract: The present disclosure provides a micro-electro-mechanical systems (MEMS) device and a method for fabricating such a device. In an embodiment, a MEMS device includes a substrate, a dielectric layer above the substrate, an etch stop layer above the dielectric layer, and two anchor plugs above the dielectric layer, the two anchor plugs each contacting the etch stop layer or a top metal layer disposed above the dielectric layer. The device further comprises a MEMS structure layer disposed above a cavity formed between the two anchor plugs and above the etch stop layer from release of a sacrificial layer.

Abstract: An encapsulated micro-electro-mechanical device, wherein a MEMS chip is encapsulated by a package formed by a first, a second, and a third substrates that are bonded together. The first substrate has a main surface bearing the MEMS chip, the second substrate is bonded to the first substrate and defines a chamber surrounding the MEMS chip, and the third substrate is bonded to the second substrate and upwardly closes the chamber. A grid or mesh structure of electrically conductive material is formed in or on the third substrate and overlies the MEMS chip; the second substrate has a conductive connection structure coating the walls of the chamber, and the first substrate incorporates an electrically conductive region, which forms, together with the conductive layer and the grid or mesh structure, a Faraday cage.