Abstract: RF absorbing structures include a dielectric layer, such as polycarbonate, and one or more layers of a carbon resistive material, such as carbon ink. The RF absorbing structures can further include one or more layers of a conductive material, such as silver ink.

Abstract: An overhead transport vehicle is described for association with an Automated Material Handling System (AMHS). The overhead transport vehicle provides features to the AMHS by which the AMHS is able to reduce a number of manual urgent lot rescues by the fab operator when a logistic algorithm controlling traffic in the AMHS is unable to transport the front opening unified pods (FOUP) from one tool to the subsequent tool in the sequence of the process steps within the q-time due to unexpected problems. An indicator on the overhead transport vehicle which helps the fab operator with spotting a lot in trouble is described. A backup power source on the overhead transport vehicle used in case of a main power failure is also described.

Abstract: A method includes bonding a supporting substrate to a semiconductor substrate of a wafer. A bonding layer is between, and is bonded to both of, the supporting substrate and the semiconductor substrate. A first etching process is performed to etch the supporting substrate and to form an opening, which penetrates through the supporting substrate and stops on the bonding layer. The opening has substantially straight edges. The bonding layer is then etched. A second etching process is performed to extend the opening down into the semiconductor substrate. A bottom portion of the opening is curved.

Abstract: A cantilever microphone includes: a substrate; a cantilever including a rotor frame and a plate covering the rotor frame, where the cantilever includes a first edge fixed to the substrate and a second end opposite to the first edge, a plurality of rotor comb fingers is attached to the plate at an edge of the plate adjacent to the second edge; and a stator fixed to the substrate or attached to a sub structure to allow some displacement from the substrate, where the stator includes a plurality of stator comb fingers, and the stator comb fingers are interdigitated with the rotor comb fingers. For the cantilever microphone, high mechanical sensitivity of the cantilever and high electrostatic sensitivity of the comb structure can be implemented, so as to increase the performance or signal-to-noise ratio of the cantilever microphone.

Abstract: An ultrasound transducer array architecture and manufacturing method is provided. The method includes providing an ultrasonic transducer including a plurality of modules, each module including an ultrasonic transducer array and an application specific integrated circuit (ASIC), the ultrasonic transducer array and the ASIC electrically coupled to a flexible interconnect, the flexible interconnect coupled to a connector. The ASIC and flexible interconnect may be arranged such that each ultrasonic transducer array is directly adjacent to another ultrasonic transducer array. The ASIC may be electrically coupled to the flexible interconnect and the ASIC to the transducer array via a redistribution layer. Each of the plurality of modules may be a stack with the ultrasonic transducer array on the RDL and RDL on the ASIC, wherein the flexible interconnect extends laterally from a top surface of the ASIC and curves down to a bottom surface of the ASIC.

Abstract: An integrated device includes: a first die; a second die coupled in a stacked way on the first die along a vertical axis; a coupling region arranged between facing surfaces of the first die and of the second die, which face one another along the vertical axis and lie in a horizontal plane orthogonal to the vertical axis, for mechanical coupling of the first and second dies; electrical-contact elements carried by the facing surfaces of the first and second dies, aligned in pairs along the vertical axis; and conductive regions arranged between the pairs of electrical-contact elements carried by the facing surfaces of the first and second dies, for their electrical coupling. Supporting elements are arranged at the facing surface of at least one of the first and second dies and elastically support respective electrical-contact elements.

Abstract: There is provided an inertial sensor comprising a frame, a resonator assembly fixed to the frame comprising a first and second resonator coupled to one another by a mechanical coupling and a drive means coupled to the resonator assembly for driving the first and second resonators to vibrate. The resonator assembly is configured such that energy is transferred between the first and second resonators through the mechanical coupling. An amount of energy transferred through the mechanical coupling is dependent on the value of an input measurand acting on one of the first and second resonators. The inertial sensor also comprises a pumping means coupled to the resonator assembly for applying a pumping signal to the resonator assembly, the pumping means controlled by electrical circuitry, and a sensor assembly configured to detect the amplitude of oscillation of the first resonator at a first resonant frequency and the amplitude of oscillation of the second resonator at a second resonant frequency.

Abstract: A semiconductor device includes a substrate having an array region defined thereon, a ring of magnetic tunneling junction (MTJ) region surrounding the array region, a gap between the array region and the ring of MTJ region, and metal interconnect patterns overlapping part of the ring of MTJ region. Preferably, the array region includes a magnetic random access memory (MRAM) region and a logic region and the ring of MTJ region further includes a first MTJ region and a second MTJ region extending along a first direction and a third MTJ region and a fourth MTJ region extending along a second direction.

Abstract: A differential pressure transducer assembly having internal sub-components welded together to improve reliability and ease assembly. A method is provided that includes welding a front adapter to a frontside of a header and welding a back adapter to a backside of the header to create a first sub-assembly. The method includes welding the first sub-assembly to a front attachment port to create a second sub-assembly. The method further includes welding a cap to a backside of the back adapter.

Abstract: A photosensitive apparatus includes an operating circuit, a first electrode, multiple first photosensitive patterns, a dielectric layer, a second electrode, a spacer layer, a light shielding layer, and at least one micro lens. The first electrode is electrically connected to a first terminal of the operating circuit. The first photosensitive patterns are separated from each other and disposed on the first electrode. Multiple first surfaces of the first photosensitive patterns are electrically connected to the first electrode. The dielectric layer is disposed on the first photosensitive patterns. The second electrode is disposed on the dielectric layer and electrically connected to multiple second surfaces of the first photosensitive patterns through multiple first contact holes of the dielectric layer. The spacer layer is disposed on the second electrode. The light shielding layer is disposed on the spacer layer. The at least one micro lens is disposed above the light shielding layer.

Abstract: This disclosure describes a microelectromechanical device comprising at least one mobile rotor. The rotor comprises a rotor measurement region and a rotor stopper region and a rotor isolation region which connects the rotor measurement region mechanically to the rotor stopper region and isolates the rotor measurement region electrically from the rotor stopper region.

Abstract: A supporting-terminal-equipped capacitor chip includes a capacitor chip, and first and second supporting terminals that are electrically conductive and hold the capacitor chip therebetween. A portion of the capacitor chip other than a first connection portion and the first supporting terminal are separated from each other. A portion of the capacitor chip other than a second connection portion and the second supporting terminal are separated from each other. The first connection portion is located on the first main surface adjacent to a first end surface. The second connection portion is located on the first main surface adjacent to a second end surface.

Abstract: A method of forming a glass electrochemical sensor is described. In some embodiments, the method may include forming a plurality of electrical through glass vias (TGVs) in an electrode substrate; filling each of the plurality of electrical TGVs with an electrode material; forming a plurality of contact TGVs in the electrode substrate; filling each of the plurality of contact TGVs with a conductive material; patterning the conductive material to connect the electrical TGVs with the contact TGVs; forming a cavity in a first glass layer; and bonding a first side of the first glass layer to the electrode substrate.

Abstract: A fingerprint sensor package and method are provided. The fingerprint sensor package comprises a fingerprint sensor along with a fingerprint sensor surface material and electrical connections from a first side of the fingerprint sensor to a second side of the fingerprint sensor. A high voltage chip is connected to the fingerprint sensor and then the fingerprint sensor package with the high voltage chip are connected to a substrate, wherein the substrate has an opening to accommodate the presence of the high voltage chip.

Abstract: An example image sensor structure includes an image layer. The image layer includes an array of light detectors disposed therein. A device stack is disposed over the image layer. An array of light guides is disposed in the device stack. Each light guide is associated with at least one light detector of the array of light detectors. A passivation stack is disposed over the device stack. The passivation stack includes a bottom surface in direct contact with a top surface of the light guides. An array of nanowells is disposed in a top layer of the passivation stack. Each nanowell is associated with a light guide of the array of light guides. A crosstalk blocking metal structure is disposed in the passivation stack. The crosstalk blocking metal structure reduces crosstalk within the passivation stack.

Abstract: A semiconductor device includes a substrate having an array region defined thereon, a ring of magnetic tunneling junction (MTJ) region surrounding the array region, a gap between the array region and the ring of MTJ region, and metal interconnect patterns overlapping part of the ring of MTJ region. Preferably, the array region includes a magnetic random access memory (MRAM) region and a logic region and the ring of MTJ region further includes a first MTJ region and a second MTJ region extending along a first direction and a third MTJ region and a fourth MTJ region extending along a second direction.

Abstract: A robot skin apparatus includes polymer membranes encapsulating a pressure sensor. The sensor includes piezo-sensitive material in contact with a pair of electrodes in spaced relationship to form a circuit. The apparatus may include a flexible substrate, with the electrodes thereon. The piezo-sensitive material may be piezoresistive film. The electrodes may be symmetrically patterned on the substrate to form a substantially circular peripheral boundary. The apparatus may include pressure sensors on opposite sides of a plane for temperature compensation, a plurality of pressure sensors arrayed on the substrate, and a data acquisition system. A method of fabricating the apparatus includes a wet lithography process for patterning the piezoresistive film. A system includes a pair of gripper fingers, an actuator connected to the fingers, a robot skin apparatus positioned on one of the fingers, and an electronic unit for receiving data from the robot skin and controlling the fingers.

Abstract: The present invention relates to a free-standing single crystalline diamond part and a single crystalline diamond part production method. The method includes the steps of: —providing a single crystalline diamond substrate or layer; —providing a first adhesion layer on the substrate or layer; —providing a second adhesion layer on the first adhesion layer: —providing a mask layer on the second adhesion layer; —forming at least one indentation or a plurality of indentations through the mask layer and the first and second adhesion layers to expose a portion or portions of the single crystalline diamond substrate or layer; and—etching the exposed portion or portions of the single crystalline diamond substrate or layer and etching entirely through the single crystalline diamond substrate or layer.

Abstract: We present a microelectromechanical system (MEMS) graphene-based pressure sensor realized by transferring a large area, few-layered graphene on a suspended silicon nitride thin membrane perforated by a periodic array of micro-through-holes. Each through-hole is covered by a circular drum-like graphene layer, namely a graphene “microdrum”. The uniqueness of the sensor design is the fact that introducing the through-hole arrays into the supporting nitride membrane allows generating an increased strain in the graphene membrane over the through-hole array by local deformations of the holes under an applied differential pressure. Further reasons contributing to the increased strain in the devised sensitive membrane include larger deflection of the membrane than that of its imperforated counterpart membrane, and direct bulging of the graphene microdrum under an applied pressure. Electromechanical measurements show a gauge factor of 4.4 for the graphene membrane and a sensitivity of 2.

Abstract: The present invention relates to the field of medical devices, and specifically to a packaging structure and a packaging method for a retinal prosthesis implanted chip, including a high-density stimulation electrode component processed by a glass substrate, wherein the stimulation electrode component comprises the glass substrate, and a plurality of stimulation electrodes and a pad structure provided on the glass substrate; the stimulation electrodes are formed through cutting out metal pins on the metal and then pouring with glass; the stimulation electrode component is connected to an ASIC chip; a glass packaging cover is covered on the ASIC chip, the glass packaging cover is provided with a metal feedthrough structure for communicating with the stimulation chip; and the packaging cover covers and encapsulates the pad structure.

Abstract: An adhesive layer is in contact with a rising portion of a metal terminal and an outer end surface of a flange portion of a drum-shaped core. A surface of the rising portion that faces the outer end surface is an inclined surface that inclines with respect to the outer end surface. The thickest portion of the adhesive layer is located near a position at which a distance between the inclined surface and the outer end surface is largest. The thickness of the thickest portion of the adhesive layer is 13 ?m or more.

Abstract: The present disclosure, in some embodiments, relates to a method of forming a micro-electromechanical system (MEMS) package. The method includes forming one or more depressions within a capping substrate. A back-side of a MEMS substrate is bonded to the capping substrate after forming the one or more depressions, so that the one or more depressions define one or more cavities between the capping substrate and the MEMS substrate. A front-side of the MEMS substrate is selectively etched to form one or more trenches extending through the MEMS substrate, and one or more polysilicon vias are formed within the one or more trenches. A conductive bonding structure is formed on the front-side of the MEMS substrate at a location contacting the one or more polysilicon vias. The MEMS substrate is bonded to a CMOS substrate having one or more semiconductor devices by way of the conductive bonding structure.

Abstract: A fingerprint sensor device and a method of making a fingerprint sensor device. As non-limiting examples, various aspects of this disclosure provide various fingerprint sensor devices, and methods of manufacturing thereof, that comprise a sensing area on a bottom side of a die without top side electrodes that senses fingerprints from the top side, and/or that comprise a sensor die directly electrically connected to conductive elements of a plate through which fingerprints are sensed.

Abstract: In a method of manufacturing an SRAM device, an insulating layer is formed over a substrate. First dummy patterns are formed over the insulating layer. Sidewall spacer layers, as second dummy patterns, are formed on sidewalls of the first dummy patterns. The first dummy patterns are removed, thereby leaving the second dummy patterns over the insulating layer. After removing the first dummy patterns, the second dummy patterns are divided. A mask layer is formed over the insulating layer and between the divided second dummy patterns. After forming the mask layer, the divided second dummy patterns are removed, thereby forming a hard mask layer having openings that correspond to the patterned second dummy patterns. The insulating layer is formed by using the hard mask layer as an etching mask, thereby forming via openings in the insulating layer. A conductive material is filled in the via openings, thereby forming contact bars.

Abstract: A structure for fixing a membrane to a carrier including a carrier; a suspended structure; and a holding structure with a rounded concave shape which is configured to fix the suspended structure to the carrier and where a tapered side of the holding structure physically connects to the suspended structure is disclosed. A method of forming the holding structure on a carrier to support a suspended structure is further disclosed. The method may include: forming a holding structure on a carrier; forming a suspended structure on the holding structure; shaping the holding structure such that it has a concave shape; and arranging the holding structure such that a tapered side of the holding structure physically connects to the suspended structure.

Abstract: Devices and methods of providing a high-performance optical sensor disclose a sensor comprised of a porous material designed to have a multilayer rib-type or multilayer pillar-type waveguide geometry. The resulting porous nanomaterial multilayer-rib or multilayer-pillar waveguide design is optically capable of achieving ˜100% confinement factor while maintaining small mode area and single-mode character. Fabrication of the device is enabled by an inverse processing technique, wherein silicon wafers are first patterned and etched through well-established techniques, which allows porous nanomaterial synthesis (i.e., porous silicon anodization) either at the wafer-scale or at the chip-scale after wafer dicing. While ˜100% is an optimal target, typical devices per presently disclosed subject matter may operate with ˜98-99+%, while allowing for some design adjustments to be made if necessary, and still maintaining high sensitivity. i.e., >85-90% confinement suitable in some applications.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of vias, a signal transmitting portion, a heater and a sensing material. The plurality of vias penetrates the substrate, wherein each of the plurality of vias includes a conductive or semiconductive portion surrounded by an oxide layer. The signal transmitting portion is disposed in the substrate, wherein adjacent vias of the plurality of vias surrounds the signal transmitting portion. The heater is electrically connected to the signal transmitting portion, and the sensing material is disposed over the heater and electrically connected to the substrate. A method of manufacturing a semiconductor structure is also provided.

Abstract: The present invention relates to a photovoltaic device (10) comprising: a first conducting layer (16), a second conducting layer electrically insulated from the first conducting layer, a porous substrate (20) made of an insulating material arranged between the first and second conducting layers, a light absorbing layer (1) comprising a plurality of grains (2) of a doped semiconducting material disposed on the first conducting layer (16) so that the grains are in electrical and physical contact with the first conducting layer, and a charge conductor (3) made of a charge conducting material partly covering the grains and arranged to penetrate through the first conducting layer (16) and the porous substrate such that a plurality of continuous paths (22) of charge conducting material is formed from the surface of the grains (2) to the second conducting layer (18), wherein the first conducting layer (16) comprises a conducting material, an oxide layer (28) formed on the surface of conducting material, and an insul

Abstract: A micromechanical device that includes a substrate, a functional layer, and a cap that are situated one above the other in parallel to a main plane of extension. A cavity that is surrounded by a bond frame that extends in parallel to the main plane of extension is formed in the functional layer, the cap being connected to the bond frame. The cavity is situated partially between the bond frame and the substrate in a direction perpendicular to the main plane of extension. A method for manufacturing a micromechanical device is also provided.

Abstract: A fingerprint sensor package and method are provided. Embodiments include a sensor and a sensor surface material encapsulated within the fingerprint sensor package. An array of electrodes of the sensor are electrically connected using through vias that are located either in the sensor, in connection blocks separated from the sensor, or through connection blocks, or else connected through other connections such as wire bonds. A high voltage die is attached in order to increase the sensitivity of the fingerprint sensor.

Abstract: A NEMS readout system includes a sensor array comprising a plurality of sensors. Each sensor of the plurality of sensors including a resonator with frequency characteristics different from the resonator of each other sensor of the plurality of sensors. A readout signal indicative of a plurality of output signals is collected from the sensor array. Each output signal of the plurality of output signals corresponding to one of the plurality of sensors. An analysis of the plurality of output signals is performed to identify a plurality of resonant frequencies and to detect a frequency shift associated with at least one of the plurality of resonant frequencies.

Abstract: A method includes obtaining an active device layer. The active device layer has a first surface with one or more active feature areas. First portions of the active feature areas are exposed, and second portions of the active feature areas are covered by an insulating layer. A conformal overcoat layer is formed on the first surface. A base of a microelectromechanical systems (MEMS) device layer is formed on the conformal overcoat layer. The MEMS device layer is spatially segregated from the active feature areas by removing portions of the base of the MEMS device layer in one or more antiparasitic regions (APRs) that correspond to the active feature areas. Metal MEMS features are formed on the base of the MEMS device layer. Selected portions of the active feature areas are exposed removing portions of the conformal overcoat layer that overlay the active feature areas.

Abstract: A detection method for electronic devices including steps as follows is provided. The detection method includes: providing an electronic device substrate; attaching a portion of electronic devices of the electronic device substrate through an electronic device transfer module, wherein the electronic device transfer module includes a plurality of detecting elements corresponding to the portion of the electronic devices, and each of the detecting elements includes at least one pair of electrodes; detecting whether a conducting path between the at least one pair of electrodes is generated or not to confirm a status of contact between the portion of the electronic devices and a contact target; and transferring the portion of the electronic devices attached to the electronic device transfer module to a target substrate. An electronic device transfer module having detecting elements is also provided.

Abstract: Disclosed are sensor packages, methods of manufacturing the same, and methods of manufacturing lid structures. The sensor package comprises a package substrate, a gas sensor on the package substrate, a lid on the package substrate and having a hole extending between a first inner surface and a first outer surface of the lid, the first inner surface of the lid facing toward the package substrate and the first outer surface of the lid facing away from the package substrate, and a waterproof film in the hole of the lid. The waterproof film is formed on the first inner surface and the first outer surface of the lid.

Abstract: Devices, systems, and methods for detecting contaminants in water are provided. A device may include: a sensor configured to detect one or more contaminants in a liquid when the sensor is dipped into the liquid; a computing device connected to the sensor, the computing device being configured to determine a resistance of the device when the sensor is dipped into the liquid; and a wireless electronic device connected to the computing device via one or more wireless links and configured to receive the resistance of the device when the sensor is dipped into the liquid from the computing device, and the wireless electronic device determines a level of contamination in the liquid based on a difference between the resistance of the device when the sensor is dipped into the liquid and a set or predetermined resistance.

Abstract: A device for accounting for environmental capacitances caused by an external object when detecting the presence and surface location of an electrically conductive coating on a transparent and/or translucent medium includes: a capacitive sensor that provides multiple capacitances; electronics that are responsive to the capacitances; an excitation source that generates a train of pulses, voltage or current to determine capacitances at the capacitive sensor; a selective indicator; and, a capacitive sensing plate that affects, or is affected by, the pulses, voltage or current from the excitation source.

Abstract: An optoelectronic device package includes an optoelectronic device having an active region on a first surface of a substrate, a bond pad area on the first surface that includes at least one contact pad electrically connected to the active region, and a cap having a first cap surface and a second cap surface, the first cap surface being secured to the first surface of the substrate, the cap covering the optoelectronic device. At least one of the cap and the substrate has an angled sidewall extending at an angle relative to an axis parallel to an optical path. The at least one contact pad is exposed by and adjacent to the angled sidewall. An electrical line extends from each of the at least one contact pad along the angled sidewall and to the second cap surface that does not overlap the active region.

Abstract: The present disclosure, in some embodiments, relates to a semiconductor structure. The semiconductor structure includes a substrate. As viewed from a top-view, the substrate has a first sidewall, one or more second sidewalls, and a plurality of third sidewalls. The first sidewall extends along a first direction and defines a first side of a trench. The one or more second sidewalls extends along the first direction and define a second side of the trench. The plurality of third sidewalls are oriented in parallel and extends in a second direction perpendicular to the first direction. The plurality of third sidewalls protrude outward from the second side of the trench and define a plurality of parallel releasing openings that are separated along the first direction by the substrate. The trench continuously extends in opposing directions past the plurality of parallel releasing openings.

Abstract: A semiconductor device structure is disclosed. The semiconductor device structure includes a mesa extending above a substrate. The mesa has a channel region between a first side and second side of the mesa. A first gate is on a first side of the mesa, the first gate comprising a first gate insulator and a first gate conductor comprising graphene overlying the first gate insulator. The gate conductor may comprise graphene in one or more monolayers. Also disclosed are a method for fabricating the semiconductor device structure; an array of vertical transistor devices, including semiconductor devices having the structure disclosed; and a method for fabricating the array of vertical transistor devices.

Abstract: The present disclosure discloses a thin film transistor and a manufacturing method thereof, an array substrate and a display device, and belongs to the field of semiconductor display technology. The active layer of the thin film transistor is made of a CIGS material. By manufacturing the active layer of the thin film transistor with the CIGS material, and the crystal defects of the CIGS are less than LTPS and IGZO, the mobility of the thin film transistor is higher, and the switching speed of the thin film transistor is faster, thereby being advantageous to further improve the resolution of the display device.

Abstract: A detection device includes a plurality of detection units formed on a semiconductor circuit, a correction capacitive element that indicates a correction capacitance value for correcting detected capacitance values detected by the detection units, a difference acquisition circuit that acquires a difference value between each of the detected capacitance values and the correction capacitance value, and a conversion circuit that converts the difference value into a digital signal. The correction capacitive element, the difference acquisition circuit, and the conversion circuit are formed on the semiconductor circuit.

Abstract: In one embodiment, an electronic display includes a first plurality of hexagon-shaped pixels and a second plurality of hexagon-shaped pixels that are coplanar with the first plurality of hexagon-shaped pixels. The first plurality of hexagon-shaped pixels each include an infrared (IR) emitter subpixel that is operable to emit IR light. The second plurality of hexagon-shaped pixels each include an IR detector subpixel that is operable to detect IR light. Each IR emitter subpixel and each IR detector subpixel includes an anode layer and a cathode layer. Each particular IR emitter subpixel includes an IR emissive layer located between the anode layer and the cathode layer of the particular IR emitter subpixel. Each particular IR detector subpixel includes an IR detector layer located between the anode layer and the cathode layer of the particular IR detector subpixel.

Abstract: The disclosed embodiments include a method, apparatus, and computer program product for generating a cross-sensor standardization model. For example, one disclosed embodiment includes a system that includes at least one processor; at least one memory coupled to the at least one processor and storing instructions that when executed by the at least one processor performs operations comprising selecting a representative sensor from a group of sensors comprising at least one of same primary optical elements and similar synthetic optical responses and calibrating a cross-sensor standardization model based on a matched data pair for each sensor in the group of sensors and for the representative sensor. In one embodiment, the at least one memory coupled to the at least one processor and storing instructions that when executed by the at least one processor performs operations further comprises generating the matched data pair, wherein the matched data pair comprises calibration input data and calibration output data.

Abstract: A piezo-resistor-based sensor, and a method to fabricate such sensor, comprise a sensor having at least a sensing element provided on a flexible structure, such as a membrane or cantilever or the like. The sensing element includes at least one piezo-resistor comprising at least a first region of the flexible structure doped with dopant atoms of a first type. The flexible structure furthermore comprises a second doped region within it, at least partially overlapping the first doped region, forming a shield for shielding the sensing element from external electrical field interference, wherein dopant atoms of the second doped region are of a second type opposite to the dopant atoms of the first doped region, for generating a charge depletion layer within the flexible structure at the overlapping region between the first doped region and the second doped region.

Abstract: A clock oscillator includes with a pullable BAW oscillator to generate an output signal with a target frequency. The BAW oscillator is based on a BAW resonator and voltage-controlled variable load capacitance, responsive to a capacitance control signal to provide a selectable load capacitance. An oscillator driver (such as a differential negative gm transconductance amplifier), is coupled to the BAW oscillator to provide an oscillation drive signal. The BAW oscillator is responsive to the oscillation drive signal to generate the output signal with a frequency based on the selectable load capacitance. The oscillator driver can include a bandpass filter network with a resonance frequency substantially at the target frequency.

Abstract: A bulk acoustic wave resonator includes: support members disposed between air cavities; a resonant part including a first electrode, a piezoelectric layer, and a second electrode sequentially disposed above the air cavities and on the support members; and a wiring electrode connected either one or both of the first electrode and the second electrode, and disposed above one of the air cavities, wherein a width of an upper surface of the support members is greater than a width of a lower surface of the support members, and side surfaces of the support members connecting the upper surface and the lower surface to each other are inclined.

Abstract: Methods, systems, and apparatus for high-resolution patterning of various substrates with functional materials, including nanomaterials. A technique of preparing a patterned substrate in a high-resolution mold for stick and transfer process is disclosed with promotes integrity of the high-resolution pattern onto the substrate. One example of a substrate is an adhesive tape. The transferred pattern(s) are scalable and can be implemented in different fabrication processes. One example is a roll-to-roll processes. In one embodiment, the transferred pattern comprises nanomaterials and the substrate comprises a flexible substrate for use in flexible and conformal assemblies for a wide variety of applications including, but not limited to, electrical-based sensors on non-planar inanimate surfaces, plant body surface, or human or animal skin.

Abstract: A method for bonding wafers eutectically, including the steps: (a) providing a first wafer having a first bonding layer and a second wafer having a second bonding layer and a spacer; (b) bringing the first wafer in juxtaposition with the second wafer, the spacer resting against the first bonding layer; (c) pressing the first wafer and the second wafer together, until the first bonding layer and the second bonding layer abut, the spacer penetrating the first bonding layer; (d) bonding the first wafer to the second wafer eutectically, by forming a eutectic alloy of at least parts of the first bonding layer and the second bonding layer. Also described is a eutectically bonded wafer composite and a micromechanical device having such a eutectically bonded wafer composite.

Abstract: A focusing mechanism includes: a driving source in which three or more cantilever-like piezoelectric actuators are radially arranged; and an optical lens unit that consists of an outer frame, an optical lens, a lens holder provided around the optical lens and holding the optical lens, and an elastic body connecting the lens holder to the outer frame and elongating and contracting in a radial direction of the optical lens, wherein surfaces of driving distal ends of the cantilever-like piezoelectric actuators, which are perpendicular to a direction of an optical axis of the optical lens, are in contact with the lens holder, and the cantilever-like piezoelectric actuators move the optical lens in the direction of the optical axis of the optical lens by the drive of the cantilever-like piezoelectric actuators to perform focusing.

Abstract: Apparatus(es) and method(s) relate generally to via arrays on a substrate. In one such apparatus, the substrate has a conductive layer. First plated conductors are in a first region extending from a surface of the conductive layer. Second plated conductors are in a second region extending from the surface of the conductive layer. The first plated conductors and the second plated conductors are external to the first substrate. The first region is disposed at least partially within the second region. The first plated conductors are of a first height. The second plated conductors are of a second height greater than the first height. A second substrate is coupled to first ends of the first plated conductors. The second substrate has at least one electronic component coupled thereto. A die is coupled to second ends of the second plated conductors. The die is located over the at least one electronic component.