Abstract: A physical quantity sensor includes, when three directions orthogonal to one another are defined as a first direction, a second direction, and a third direction, a substrate; and a moving member facing the substrate in the third direction via a gap and becoming displaced in the third direction in relation to the substrate. The moving member has a first region that has a plurality of penetration holes penetrating the moving member in the third direction and having a square opening shape as viewed from the third direction, and a second region having no penetration hole. At least one of a length in the first direction and a length in the second direction of the second region is equal to or greater than S0+2×S1, where S0 is a length of one side of the penetration hole, and S1 is a space between the penetration holes next to each other.

Abstract: A semiconductor device has a first substrate including an element region, a peripheral region that surrounds the element region, a first insulator with a first recess portion in the peripheral region, a first metal layer in the element region, and a first conductor in the peripheral region to surround the element region. A second substrate has an element region, a peripheral region that surrounds the element region, a second insulator with a second recess portion that faces the first recess portion, a second metal layer in contact with the first metal layer, and a second conductor that surrounds the element region of the second substrate.

Abstract: A micro-electromechanical system (MEMS) device comprises a fixed portion and a proofmass suspended by at least one composite beam. The composite beam is cantilevered relative to the fixed portion and extends between a first end that is integrally formed with the fixed portion and a second distal end. The composite beam comprises an insulator having a top surface and at least two side surfaces; a conductor extending away from the fixed portion and surrounding at least a portion of the insulator; and a second conductor positioned adjacent to the top surface of the conductor and extending parallel with the insulator away from the fixed portion. The second conductor is separated from the first conductor to provide a low parasitic conductance of the composite beam.

Abstract: A pressure sensor includes a micromechanical sensor element including a pressure-sensitive diaphragm, which spans a cavity in a base material and includes a diaphragm electrode. A fixed counter electrode is situated inside the cavity and, with the diaphragm electrode, forms a first measuring capacitor for detecting a first measuring pressure. A reference capacitor is situated inside the cavity and includes a first and a second fixed reference electrode. The pressure sensor is operable in a first operating mode, in which the first measuring capacitor and the first reference capacitor are interconnected in a first bridge circuit. The pressure sensor is operable in a second operating mode, in which the diaphragm electrode, the counter electrode and the reference electrodes are interconnected in such a way that the diaphragm electrode, together with the at least one first reference electrode, forms a second measuring capacitor for detecting a second measuring pressure.

Abstract: A method of manufacturing a semiconductive structure includes receiving a first substrate; disposing an interconnection layer on the first substrate; forming a plurality of conductors over the interconnection layer; filing gaps between the plurality of conductors with a film; forming a barrier layer over the film; removing the barrier layer; and partially removing the film to expose a portion of the interconnection and leave a portion of the interconnection layer covered by the film.

Abstract: A capacitive sensor is disclosed. In an embodiment a semiconductor device includes a die including a capacitive pressure sensor integrated on a CMOS circuit, wherein the capacitive pressure sensor includes a first electrode and a second electrode separated from one another by a cavity, the second electrode including a suspended tensile membrane, and wherein the first electrode is composed of one or more aluminum-free layers containing Ti.

Abstract: A fingerprint sensor includes a die, a plurality of conductive structures, an encapsulant, a plurality of conductive patterns, a first dielectric layer, a second dielectric layer, and a redistribution structure. The die has an active surface and a rear surface opposite to the active surface. The conductive structures surround the die. The encapsulant encapsulates the die and the conductive structures. The conductive patterns are over the die and are electrically connected to the die and the conductive structures. Top surfaces of the conductive patterns are flat. The first dielectric layer is over the die and the encapsulant. A top surface of the first dielectric layer is coplanar with top surfaces of the conductive patterns. The second dielectric layer covers the first dielectric layer and the conductive patterns. The redistribution structure is over the rear surface of the die.

Abstract: A MEMS structure may include a substrate, a first metal layer arranged over the substrate, an aluminum nitride layer at least partially arranged over the first metal layer and a second metal layer including one or more patterns arranged over the aluminum nitride layer. The first metal layer may include an electrode area configured for external electrical connection and one or more isolated areas configured to be electrically isolated from the electrode area and further configured to be electrically isolated from external electrical connection. Each pattern of the second metal layer may be arranged to at least partially overlap with one of the isolated area(s) of the first metal layer.

Abstract: A method for closing openings in a flexible diaphragm of a MEMS element. The method includes: providing at least one opening in the flexible diaphragm, situating sealing material in the area of the at least one opening, melting-on at least the applied sealing material in the area of the at least one opening, and subsequently cooling the melted-on material to close the at least one opening.

Abstract: The present disclosure relates to a microelectromechanical systems (MEMS) apparatus. The MEMS apparatus includes a base substrate and a conductive routing layer disposed over the base substrate. A bump feature is disposed directly over the conductive routing layer. Opposing outermost sidewalls of the bump feature are laterally between outermost sidewalls of the conductive routing layer. A MEMS substrate is bonded to the base substrate and includes a MEMS device directly over the bump feature. An anti-stiction layer is arranged on one or more of the bump feature and the MEMS device.

Abstract: A method includes fusion bonding a handle wafer to a first side of a device wafer. The method further includes depositing a first mask on a second side of the device wafer, wherein the second side is planar. A plurality of dimple features is formed on an exposed portion on the second side of the device wafer. The first mask is removed from the second side of the device wafer. A second mask is deposited on the second side of the device wafer that corresponds to a standoff. An exposed portion on the second side of the device wafer is etched to form the standoff. The second mask is removed. A rough polysilicon layer is deposited on the second side of the device wafer. A eutectic bond layer is deposited on the standoff. In some embodiments, a micro-electro-mechanical system (MEMS) device pattern is etched into the device wafer.

Abstract: A module (1) for a display and/or operating device (10), the module (1) comprising a first transparent electrode (3) having a first matrix of a plurality of electrode islands (3a, 3b, 3c); a transparent piezoelectric layer (2) having a first and a second area; a second transparent electrode (4); a transparent substrate (12); and a conductive path arrangement (25) having at least a first conductive path (24a) on the transparent piezoelectric layer (2), wherein the transparent substrate (12) is coated with the second transparent electrode (4) and the second transparent electrode (4) is disposed between the transparent substrate and the transparent piezoelectric layer (2), and the first area is coated with the first transparent electrode and the second area is coated with the second transparent electrode (4); and the electrode islands (3a, 3b, 3c) are arranged electrically insulated from one another on the first area of the transparent piezoelectric material (2), wherein the at least first conductive path (24a)

Abstract: According to one embodiment, a sensor includes a first sensor part. The first sensor part includes a first counter electrode, a first movable electrode, a first layer, and a first intermediate layer. The first movable electrode is between the first counter electrode and the first layer. The first intermediate layer is between the first movable electrode and a portion of the first layer. A first gap is located between the first counter electrode and the first movable electrode. A distance between the first counter electrode and the first movable electrode changes according to a concentration of a gas around the first sensor part. The first layer includes a crystal. The first intermediate layer is amorphous, or a crystallinity of the first intermediate layer is less than a crystallinity of the first layer. A width of the first layer is greater than a width of the first intermediate layer.

Abstract: A physical quantity sensor includes a substrate, a movable body that is provided displaceably in a state of being opposed to the substrate and is provided with a first through-hole and a second through-hole as through-holes, and a protrusion configured integrally with the substrate at a side of the movable body of the substrate, and in which the protrusion is provided at a position where the protrusion overlaps the through-hole and the movable body in plan view.

Abstract: In one instance, a semiconductor package includes a lead frame and a semiconductor die mounted to the lead frame via a plurality of bumps that are shaped or tapered. Each of the plurality of bumps includes a first end connected to the semiconductor die and an opposing, second end connected to the lead frame. The first end has an end surface area A1. The second end has an end surface area A2. The end surface area A1 of the first end is less than the end surface area A2 of the second end. Other aspects are disclosed.

Abstract: A transmissive polarization control device includes: a semiconductor layer having a first surface and a second surface opposite to the first surface, the semiconductor layer including: a first conductivity type region having a conductivity type, a second conductivity type region having a conductivity type, and a pn junction located between the first and second conductivity type regions; a loop electrode disposed on the first surface and configured such that an electric current flowing through the loop produces a magnetic field in a direction penetrating the pn junction; and a near-field light formation region in which an impurity of the first conductivity type introduced as a dopant into the first conductivity type region for formation of near-field light is distributed. A polarization direction of linearly polarized light traveling through a region surrounded by the loop electrode and the near-field light formation region is rotated according to the electric current.

Abstract: The invention relates to a device (10) for determining the mechanical properties of nanomaterials comprising a substrate (30) onto which a nanomaterial specimen (40) can be anchored, wherein said substrate (30) is mechanically connected to an actuator (20) on one side and to a sensor (50) on the opposite side, and wherein the substrate (30) is configured to generate a fracture line (32?) in a predetermined position which divides the substrate (30) into two parts (31,31?), wherein a first part (31) is connected to the actuator (20) and a second part (31?) is connected to a sensor (50), in order to allow a relative movement between the actuator (20) and the sensor (50).

Abstract: An optomechanical device for producing and detecting optical signals comprising a proof mass assembly, one or more laser devices, and a circuit. The one or more laser devices are configured to generate a first optical signal and a second optical signal. The circuit is configured to modulate, with an electro-optic modulator (EOM), the second optical signal, output the first optical signal and the second optical signal to the proof mass assembly, generate a filtered optical signal corresponding to a response by the proof mass assembly to the first optical signal without the second optical signal, and generate an electrical signal based on the filtered optical signal, wherein the EOM modulates the second optical signal based on the electrical signal.

Abstract: The present invention relates to a multi-functional platform, including: a printed circuit board (PCB) having a single chip integrated thereon; wherein the single chip includes a substrate having an environmental system disposed thereon, the environmental system including a plurality of three-dimensional (3D) printed, patterned and multi-layered nanostructures disposed on the substrate. The nanostructures include an on-chip heater, a power source, a wireless communication module, and a plurality of sensors, the sensors including at least one of a gas sensor, a pressure sensor, or a temperature sensor, each of which is directly deposited on the substrate and printed with a plurality of nanomaterials. The 3D patterned nanostructures use functionalized nanomaterials, which are patterned by a template using one of directed assembly or nano-offset printing, to deposit the nanostructures directly on the substrate of the single chip.

Abstract: An actuator device includes a support portion, a movable portion, a connection portion which connects the movable portion to the support portion on a second axis, a first wiring which is provided on the connection portion, a second wiring which is provided on the support portion, and an insulation layer which includes a first opening exposing a surface opposite to the support portion in a first connection part located on the support portion in one of the first wiring and the second wiring and covers a corner of the first connection part. The rigidity of a first metal material forming the first wiring is higher than the rigidity of a second metal material forming the second wiring. The other wiring of the first wiring and the second wiring is connected to the surface of the first connection part in the first opening.

Abstract: An integrated circuit (IC) with an integrated microelectromechanical systems (MEMS) structure is provided. In some embodiments, the IC comprises a semiconductor substrate, a back-end-of-line (BEOL) interconnect structure, the integrated MEMS structure, and a cavity. The BEOL interconnect structure is over the semiconductor substrate, and comprises wiring layers stacked in a dielectric region. Further, an upper surface of the BEOL interconnect structure is planar or substantially planar. The integrated MEMS structure overlies and directly contacts the upper surface of the BEOL interconnect structure, and comprises an electrode layer. The cavity is under the upper surface of the BEOL interconnect structure, between the MEMS structure and the BEOL interconnect structure.

Abstract: The present disclosure concerns an integrated circuit comprising a substrate, the substrate comprising a first region having a first thickness and a second region having a second thickness smaller than the first thickness, the circuit comprising a three-dimensional capacitor formed inside and on top of the first region, and at least first and second connection terminals formed on the second region, the first and second connection terminals being respectively connected to first and second electrodes of the three-dimensional capacitor.

Abstract: A MEMS device formed using the materials of the BEOL of a CMOS process where a post-processing of vHF and post backing was applied to form the MEMS device and where a total size of the MEMS device is between 50 um and 150 um. The MEMS device may be implemented as an inertial sensor among other applications.

Abstract: The present disclosure relates to a method of forming an integrated chip structure. The method includes forming a plurality of interconnect layers within a dielectric structure over a substrate. A dielectric layer arranged along a top of the dielectric structure is patterned to define a via hole exposing an uppermost one of the plurality of interconnect layers. An extension via is formed within the via hole and one or more conductive materials are formed over the dielectric layer and the extension via. The one or more conductive materials are patterned to define a sensing electrode over and electrically coupled to the extension via. A microelectromechanical systems (MEMS) substrate is bonded to the substrate. The MEMs substrate is vertically separated from the sensing electrode.

Abstract: In an embodiment, a pressure sensor module includes a base electrode surrounding at least a part of a bottom electrode, an anchor arrangement on top of the base electrode including at least two electrically conductive walls that both surround at least the part of the bottom electrode and an electrically conductive layer that covers at least the bottom electrode and the anchor arrangement such that a cavity is formed between the bottom electrode, the anchor arrangement and the electrically conductive layer, wherein, on at least one side of the cavity, a proportionate area of the electrically conductive walls in a cross section extending from a surface of an inner wall of the anchor arrangement facing the cavity to a surface of an outermost wall of the anchor arrangement facing away from the cavity in a plane parallel to a plane of the bottom electrode is equal to or less than 10%.

Abstract: The present disclosure relates to the field of flexible display technology and provides a flexible display panel, a method for manufacturing the same, and a display device, which can reduce the stress in the direction perpendicular to the bending surface applied on a portion of the signal lead wire located in the bending area when the flexible display panel is bent. The flexible display panel includes a flexible basal substrate including a first surface, the first surface including a bending area provided with a plurality of protrusions, and a signal lead wire located on a side of the first surface facing away from the flexible basal substrate. The signal lead wire extends across the bending area and has a shape substantially matching the plurality of protrusions.

Abstract: An electronic pen includes a tubular casing, and a first coupling member and a second coupling member that are coupled to each other in a hollow portion of the casing in an axial direction of the casing. In the axial direction, the first coupling member and the second coupling member are coupled to each other, and in a coupling portion between the first coupling member and the second coupling member, a welded portion that attaches the first coupling member and the second coupling member to each other is formed. The first coupling member is coupled to a core. The second coupling member holds a printed circuit board. The core of the core-side component is made of a conductive material. The second coupling member includes a conductor that supplies, to the core, a signal from a signal transmitting circuit on the printed circuit board with a battery.

Abstract: A MEMS device formed using the materials of the BEOL of a CMOS process where a post-processing of vHF and post backing was applied to form the MEMS device and where a total size of the MEMS device is between 50 um and 150 um. The MEMS device may be implemented as an inertial sensor among other applications.

Abstract: An illumination unit is described that includes a first light source positioned on a first axis and a second light source on a second axis that intersects and is angularly offset with respect to the first axis. The illumination unit includes a reflector having an aperture through which the first axis extends and a reflective surface angled with respect to the first axis and second axis.

Abstract: The method of manufacturing a plurality of semiconductor chips (100) comprises a step A) of providing a semiconductor substrate (1) having a plurality of integrated electronic circuits (2) on a top side (10) thereof. In a step B), a sacrificial layer (3) is applied on one side of the semiconductor substrate. In a step C), holes (30) are introduced in the sacrificial layer so that at least one hole is formed above each electronic circuit. In a step D), the semiconductor substrate is adhered to a carrier (5) with the sacrificial layer at the front, an adhesive layer (4) being used between the sacrificial layer and the carrier, and the adhesive layer filling the holes so that holding elements (40) from the adhesive layer are formed in the holes. In a step E) the semiconductor substrate is thinned.

Abstract: Embodiments of the application provide a MEMS chip and an electrical packaging method for a MEMS chip. The MEMS chip includes a MEMS device layer, a first isolating layer located under the MEMS device layer, and a first conducting layer located under the first isolating layer. At the first isolating layer, there are a corresponding quantity of first conductive through holes in locations corresponding to conductive structures in a first region and in locations corresponding to electrodes in a second region. At the first conducting layer, there are M electrodes spaced apart from one another, and the M electrodes are respectively connected to M of the first conductive through holes. At the first conducting layer, electrodes in locations corresponding to at least some of the conductive structures in the first region are electrically connected in a one-to-one correspondence to electrodes in locations corresponding to at least some of the electrodes in the second region.

Abstract: A method for fabricating a multilayered metal nanowire array including providing a metal seed layer, stacking a plurality of porous templates on the seed layer so that a gap forms between each adjacent pair of templates, depositing by electroplating a metal in the pores so that the metal produces nanowires in the templates and lateral interposers in the gaps between the templates, and dissolving the templates so as to produce the multilayered nanowire array including the lateral interposers. The layers between the interposers can have the same or different thicknesses, the diameter and density of the pores in each layer can be the same or different and the metal deposited in the pores of the layers can be the same or different.

Abstract: A display substrate and a method for manufacturing the same. The display substrate includes a stretchable substrate and a signal line on a first surface of the stretchable substrate. The first surface of the stretchable substrate is provided with a plurality of grooves spaced apart from each other, and the signal line includes a first portion within the grooves and a second portion outside the grooves.

Abstract: A device having both an electronic assembly having an electronic component assembled on a first substrate, and also a body defining a cavity having a first end in fluid flow communication with a fluid, the electronic component extending inside the cavity and the first substrate including a portion in contact with a wall of the cavity. The coefficient of thermal expansion of the material of the first substrate is less than that of the electronic component, and the electronic component is assembled on the first substrate by a brazing type assembly method involving the application of heat. A method of making an electronic assembly. An assembly obtained by the method.

Abstract: A vibrator device includes a base, a relay substrate supported by the base, and a vibrating element supported by the relay substrate, the relay substrate includes a base mount that is directly or indirectly fixed to the base, a vibrating element mount on which the vibrating element is mounted, and a beam that couples the base mount and the vibrating element mount, and parts of the vibrating element mount that are coupled to the vibrating element are positioned on both sides of the base mount while interposing the base mount therebetween in a plan view.

Abstract: A MEMS support structure and a cap structure are provided. At least one vertically-extending trench is formed into the MEMS support structure or a portion of the cap structure. A vertically-extending outgassing material portion having a surface that is physically exposed to a respective vertically-extending cavity is formed in each of the at least one vertically-extending trench. A matrix material layer is attached to the MEMS support structure. A movable element laterally confined within a matrix layer is formed by patterning the matrix material layer. The matrix layer is bonded to the cap structure. A sealed chamber containing the movable element is formed. Each vertically-extending outgassing material portion has a surface that is physically exposed to the sealed chamber, and outgases a gas to increase the pressure in the sealed chamber.

Abstract: An energy harvesting device and a display device are provided. The energy harvesting device is configured to generate a power signal and the energy harvesting device includes a slot antenna. The slot antenna comprises a first section and a second section. The first section of the slot antenna is a linear shape and comprises an opening end, and the second section of the slot antenna is a bending shape and comprises a plurality of continuously bending corners.

Abstract: In a microelectromechanical component according to the invention, at least one microelectromechanical element (5), electrical contacting elements (3) and an insulation layer (2.2) and thereon a sacrificial layer (2.1) formed with silicon dioxide are formed on a surface of a CMOS circuit substrate (1) and the microelectromechanical element (5) is arranged freely movably in at least a degree of freedom. At the outer edge of the microelectromechanical component, extending radially around all the elements of the CMOS circuit, a gas- and/or fluid-tight closed layer (4) which is resistant to hydrofluoric acid and is formed with silicon, germanium or aluminum oxide is formed on the surface of the CMOS circuit substrate (1).

Abstract: A sensor includes a sensor substrate, and an upper lid substrate joined to an upper surface of the sensor substrate. The sensor substrate includes a fixed part, a deformable beam connected to the fixed part, and a weight connected to the beam. The weight is movable relative to the fixed part. The upper lid substrate includes a first part containing silicon and a second part joined to the first part and containing glass. The first part includes a projection protruding toward the sensor substrate relative to the second part. The sensor has high accuracy or high reliability.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a metallization layer over the substrate, and a sensing structure over the metallization layer. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier in proximity to a top surface of the outgassing layer, the patterned outgassing barrier exposing a portion of the outgassing layer, and an electrode over the patterned outgassing barrier. The method for manufacturing the semiconductor device is also provided.

Abstract: The present application discloses a sensor system that includes a sensor having a sensor surface, a sample cartridge including one or more flexible membranes and a membrane frame, the membrane frame including one or more openings covered by the one or more flexible membranes defining one or more wells for holding one or more samples, the flexible membrane having a sample side supporting the sample and an opposite sensor side, the sample cartridge being removably insertable in the sensor system such that the sensor side of the flexible membrane is positioned above and faces the sensor surface, a displacement mechanism that can be actuated to displace the flexible membrane toward the sensor surface such that the sample is moved to a position closer to the sensor surface, and an optical imaging system that detects light emitted from the sensor. Disclosed also are a cartridge cassette and a method of use.

Abstract: Unwanted or parasitic capacitances may occur in MEMS switches. To reduce or eliminate the impact of the unwanted or parasitic capacitance, an extra device, such as a second MEMS switch, may be coupled to a first MEMS switch to divert the unwanted or parasitic capacitance to ground.

Abstract: A sensor with a nanowire heater may be provided. The sensor may be patterned in a device layer of a Silicon on Insulation (SOI) wafer comprising a backside layer and a Buried Oxide (BOX) layer and the nanowire heater may be patterned in the device layer of the SOI wafer adjacent to the sensor. Next, metal routing may be created for the SOI wafer and a bond carrier wafer may be provided on a metal routing side of the SOI wafer. The backside layer may then be ground until the BOX layer is exposed. Then the device layer may be patterned through the BOX layer to expose the sensor and the nanowire heater. A dielectric may be deposited covering at least one of the following: the sensor; and the nanowire heater.

Abstract: The invention discloses a circuit aging detection sensor based on voltage comparison. A control circuit generates an aging voltage signal, a standard voltage signal and a reference voltage signal. The aging voltage signal passes through a first voltage-controlled oscillator to generate an aging frequency signal. The standard voltage signal passes through a second voltage-controlled oscillator to generate a standard frequency signal. The standard frequency signal and the aging frequency signal pass through an aging detection circuit to generate a frequency difference signal. A level signal generated by a serial data detector passes through a beat-frequency oscillator to generate a reset signal. A counter quantizes aging information, which is converted by a digital-analog converter into a quantized voltage signal. The quantized voltage signal is compared with the reference voltage signal by a voltage comparator, to generate a hopping signal at a voltage superposition node, and an aging signal is output.

Abstract: A Magnetic Random Access Memory (MRAM), a method of manufacturing the same, and an electronic device including the same are provided. The MRAM includes a substrate, an array of memory cells arranged in rows and columns, bit lines, and word lines. The memory cells each include a vertical switch device and a magnetic tunnel junction on the switch device and electrically connected to a first terminal of the switch device. An active region of the switch device at least partially includes a single-crystalline semiconductor material. Each of the memory cell columns is disposed on a corresponding bit line, and a second terminal of each of the respective switch devices in the memory cell column is electrically connected to the corresponding bit line. Each of the word lines is electrically connected to a control terminal of the respective switch devices of the respective memory cells in a corresponding memory cell row.

Abstract: Disclosed is a liquid-sealed cartridge in which a liquid is transferred by a centrifugal force generated when the liquid-sealed cartridge is rotated around a rotation shaft, including: a liquid storage portion configured to store the liquid therein; a seal having an outer peripheral portion connected to the liquid storage portion, the seal being configured to seal the liquid storage portion; a flow path connected to the liquid storage portion via the seal, through which the liquid in the liquid storage portion is transferred by the centrifugal force in a direction away from the rotation shaft, wherein, when the seal receives a pressing force, the seal is inclined in a pressing direction, with one portion of the outer peripheral portion thereof remaining connected with the liquid storage portion, and the other portion of the outer peripheral portion being separated from the liquid storage portion.

Abstract: A touch device includes a base; a first peripheral wire, a second peripheral wire, a third peripheral wire, a first shield wire and a second shield wire are disposed on the base; there is a first potential difference between the first peripheral wire and the second peripheral wire, and there is a second potential difference between the second peripheral wire and the third peripheral wire. The second peripheral wire is disposed between and spaced from the first peripheral wire and the third peripheral wire. The first shield wire is discontinuously disposed between the first peripheral wire and the second peripheral wire. The second shield wire is discontinuously disposed between the second peripheral wire and the third peripheral wire.

Abstract: In one aspect of the disclosure, a semiconductor package is disclosed. The semiconductor package includes a lead frame. A semiconductor die is attached to a first side of the lead frame. A protective shell covers at least a first portion of the first surface of the semiconductor die. The protective shell comprises of ink residue. A layer of molding compound covers an outer surface of the protective shell and exposed portion of the first surface of the semiconductor die. A cavity space is within an inner space of the protective shell and the first portion of the top surface of the semiconductor die.

Abstract: A display apparatus includes a flexible substrate and a first insulation layer disposed on the flexible substrate. The flexible substrate includes a bending area. The first insulation layer includes a first unevenness disposed over the bending area. The first unevenness includes two or more steps in at least a portion of the first unevenness.

Abstract: A pseudo-piezoelectric d33 vibration device includes transistors and receivers electrically connected to the transistors. Each transistor controls a corresponding one of the receivers to receive a second vibration wave, generated after an object reflects a first vibration wave, and to generate a sensing signal. Each receiver has a first electrode, a second electrode and a nano-gap, which is created between the first and second electrodes after a semiconductor-metal compound is formed. A display integrating the pseudo-piezoelectric d33 vibration device is also provided.